JP2013520016A - 連続ウェルデカップリングコンデンサのためのシステムおよび方法 - Google Patents

連続ウェルデカップリングコンデンサのためのシステムおよび方法 Download PDF

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Publication number
JP2013520016A
JP2013520016A JP2012553032A JP2012553032A JP2013520016A JP 2013520016 A JP2013520016 A JP 2013520016A JP 2012553032 A JP2012553032 A JP 2012553032A JP 2012553032 A JP2012553032 A JP 2012553032A JP 2013520016 A JP2013520016 A JP 2013520016A
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JP
Japan
Prior art keywords
well
connections
high dose
conductor
dose implant
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Pending
Application number
JP2012553032A
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English (en)
Japanese (ja)
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JP2013520016A5 (https=
Inventor
カールソン アンドルー
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Advanced Micro Devices Inc
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Advanced Micro Devices Inc
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Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of JP2013520016A publication Critical patent/JP2013520016A/ja
Publication of JP2013520016A5 publication Critical patent/JP2013520016A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/212—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/201—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits
    • H10D84/204—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors
    • H10D84/212—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors
    • H10D84/217—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of only components covered by H10D1/00 or H10D8/00, e.g. RLC circuits of combinations of diodes or capacitors or resistors of only capacitors of only conductor-insulator-semiconductor capacitors

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  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2012553032A 2010-02-12 2011-02-11 連続ウェルデカップリングコンデンサのためのシステムおよび方法 Pending JP2013520016A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/705,185 US8227846B2 (en) 2010-02-12 2010-02-12 Systems and methods for a continuous-well decoupling capacitor
US12/705,185 2010-02-12
PCT/US2011/024522 WO2011106176A1 (en) 2010-02-12 2011-02-11 Systems and methods for a continuous-well decoupling capacitor

Publications (2)

Publication Number Publication Date
JP2013520016A true JP2013520016A (ja) 2013-05-30
JP2013520016A5 JP2013520016A5 (https=) 2014-03-13

Family

ID=43937842

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012553032A Pending JP2013520016A (ja) 2010-02-12 2011-02-11 連続ウェルデカップリングコンデンサのためのシステムおよび方法

Country Status (6)

Country Link
US (1) US8227846B2 (https=)
EP (1) EP2534690B1 (https=)
JP (1) JP2013520016A (https=)
KR (1) KR101697720B1 (https=)
CN (1) CN102754214A (https=)
WO (1) WO2011106176A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025192500A1 (ja) * 2024-03-12 2025-09-18 ヌヴォトンテクノロジージャパン株式会社 デカップリング容量素子

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9082886B2 (en) * 2011-05-12 2015-07-14 Taiwan Semiconductor Manufacturing Company, Ltd. Adding decoupling function for tap cells
US10157910B2 (en) * 2015-12-30 2018-12-18 Taiwan Semiconductor Manufacturing Company Limited Circuits and structures including tap cells and fabrication methods thereof
US10032763B2 (en) 2016-06-02 2018-07-24 Qualcomm Incorporated Bulk cross-coupled high density power supply decoupling capacitor
US10740527B2 (en) 2017-09-06 2020-08-11 Apple Inc. Semiconductor layout in FinFET technologies
US11244895B2 (en) 2020-06-01 2022-02-08 Qualcomm Incorporated Intertwined well connection and decoupling capacitor layout structure for integrated circuits

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000223722A (ja) * 1998-02-25 2000-08-11 Citizen Watch Co Ltd Ｍｉｓ型可変容量コンデンサおよびそれを用いた温度補償型発振器
JP2003297940A (ja) * 2002-03-29 2003-10-17 Kawasaki Microelectronics Kk Ｍｏｓ型可変容量素子および集積回路
JP2005340791A (ja) * 2004-04-28 2005-12-08 Semiconductor Energy Lab Co Ltd Ｍｏｓ容量素子及び半導体装置
JP2007157892A (ja) * 2005-12-02 2007-06-21 Nec Electronics Corp 半導体集積回路およびその製造方法
JP2007299860A (ja) * 2006-04-28 2007-11-15 Nec Electronics Corp 半導体装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0174313B1 (ko) * 1994-07-27 1999-02-01 스기야마 가즈히꼬 Mos 커패시터와 그 제조방법
US6239662B1 (en) * 1998-02-25 2001-05-29 Citizen Watch Co., Ltd. Mis variable capacitor and temperature-compensated oscillator using the same
US6475838B1 (en) * 2000-03-14 2002-11-05 International Business Machines Corporation Methods for forming decoupling capacitors
US6621128B2 (en) 2001-02-28 2003-09-16 United Microelectronics Corp. Method of fabricating a MOS capacitor
US20050035410A1 (en) 2003-08-15 2005-02-17 Yee-Chia Yeo Semiconductor diode with reduced leakage
US7301217B2 (en) 2004-04-23 2007-11-27 Taiwan Semiconductor Manufacturing Co., Ltd. Decoupling capacitor design
US7378705B2 (en) 2005-09-01 2008-05-27 Honeywell International, Inc. Single-poly EEPROM cell with lightly doped MOS capacitors

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000223722A (ja) * 1998-02-25 2000-08-11 Citizen Watch Co Ltd Ｍｉｓ型可変容量コンデンサおよびそれを用いた温度補償型発振器
JP2003297940A (ja) * 2002-03-29 2003-10-17 Kawasaki Microelectronics Kk Ｍｏｓ型可変容量素子および集積回路
JP2005340791A (ja) * 2004-04-28 2005-12-08 Semiconductor Energy Lab Co Ltd Ｍｏｓ容量素子及び半導体装置
JP2007157892A (ja) * 2005-12-02 2007-06-21 Nec Electronics Corp 半導体集積回路およびその製造方法
JP2007299860A (ja) * 2006-04-28 2007-11-15 Nec Electronics Corp 半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025192500A1 (ja) * 2024-03-12 2025-09-18 ヌヴォトンテクノロジージャパン株式会社 デカップリング容量素子

Also Published As

Publication number Publication date
CN102754214A (zh) 2012-10-24
EP2534690B1 (en) 2021-03-31
EP2534690A1 (en) 2012-12-19
KR20120121914A (ko) 2012-11-06
WO2011106176A1 (en) 2011-09-01
US8227846B2 (en) 2012-07-24
US20110198677A1 (en) 2011-08-18
KR101697720B1 (ko) 2017-01-18

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