JP2013519233A - 白色光装置および方法 - Google Patents
白色光装置および方法 Download PDFInfo
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Classifications
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/20—Light sources comprising attachment means
- F21K9/23—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings
- F21K9/232—Retrofit light sources for lighting devices with a single fitting for each light source, e.g. for substitution of incandescent lamps with bayonet or threaded fittings specially adapted for generating an essentially omnidirectional light distribution, e.g. with a glass bulb
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
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- F21Y2115/10—Light-emitting diodes [LED]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Led Device Packages (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
Abstract
Description
本出願は、本願の譲受人に譲渡された米国仮特許出願第61/301,193号(出願日:2011年2月3日)に対する優先権を主張する。本明細書中、同文献をあらゆる目的のために援用する。
本発明は、照明技術に関する。本発明の実施形態は、蛍光体の利用によってバルクガリウムおよび窒素含有材料から製造されたLEDデバイスアレイまたは他の材料上に製造されたLEDデバイスアレイをパッケージする技術を含む。本発明は、白色照明、多色照明、一般照明、装飾照明、自動車用ランプおよび航空機用ランプ、街灯、植物成長用照明、表示灯、フラットパネルディスプレイ用の照明および他の光電子デバイスに適用することができる。
本発明は、基板スケール処理を用いたLEDデバイスの製造方法を提供する。前記方法は、表面を有する基板を提供する工程と、反射率が少なくとも85%である反射面を形成する工程とを含む。前記方法は、LEDデバイスが形成された前記反射面上に空間的に配置された複数のアレイ領域を形成する工程をさらに含む。所望であれば、前記反射層上に電気的絶縁層を形成し、前記LED上にカバーを追加することができる。
本明細書中、「LEDデバイス」とは発光ダイオードを指し、「LEDパッケージ」とは、レジスタ、ダイオードおよびコンデンサなどの任意の関連電気部品を備えたパッケージ済みLEDデバイスを指す。従来のLEDデバイスの場合、複数のデメリットがある。例えば、高い光出力を達成するためには、LEDデバイスを共に束ねることが一般的である。しかし、このような配置構成は高コストであり、また構造の大型化にも繋がる。
(Sr、Ca)10(PO4)6*DB2O3:Eu2+(ここでは、0<n1)
(Ba、Sr、Ca)5(PO4)3(Cl、F、Br、OH):Eu2+、Mn2+
(Ba、Sr、Ca)BPO5:Eu2+、Mn2+
Sr2Si3O8*2SrC12:Eu2+
(Ca、Sr、Ba)3MgSi2O8:Eu2+、Mn2+
BaA18O13:Eu2+
2SrO*0.84P2O5*0.16B2O3:Eu2+
(Ba、Sr、Ca)MgAl10O17:Eu2+、Mn2+
(Ba、Sr、Ca)Al2O4:Eu2+
(Y、Gd、Lu、Sc、La)BO3:Ce3+、Tb3+
(Ba、Sr、Ca)2(Mg、Zn)Si2O7:Eu2+
(Mg、Ca、Sr、Ba、Zn)2S1_xO4_2x:Eu2+(ここでは、0<x=0.2)
(Sr、Ca、Ba)(Al、Ga、m)2S4:Eu2+
(Lu、Sc、Y、Tb)2_u_vCevCal+uLiwMg2_wPw(Si、Ge)3_w012_u/2(ここで、−O.SSu^l;0<v£Q.1;およびOSw^0.2
(Ca、Sr)8(Mg、Zn)(Si04)4C12:Eu2+、Mn2+
Na2Gd2B207:Ce3+、Tb3+
(Sr、Ca、Ba、Mg、Zn)2P2O7:Eu2+、Mn2+
(Gd、Y、Lu、La)2O3:Eu3+、Bi3+
(Gd、Y、Lu、La)2O2S:Eu3+、Bi3+
(Gd、Y、Lu、La)vO4:Eu3+、Bi3+
(Ca、Sr)S:Eu2+、Ce3+
(Y、Gd、Tb、La、Sm、Pr、Lu)3(Sc、Al、Ga)5_nO12_3/2n:Ce3+(ここでは、0^0^0.5)
ZnS:Cu+、Cl〜
ZnS:Cu+、Al3+
ZnS:Ag+、Al3+
SrY2S4:Eu2+
CaLa2S4:Ce3+
(Ba、Sr、Ca)MgP2O7:Eu2+、Mn2+
(Y、Lu)2WO6:Eu3+、Mo6+
(Ba、Sr、Ca)nSinNn:Eu2+(ここでは、2n+4=3n)
Ca3(SiO4)Cl2:Eu2+
ZnS:Ag+、Cl〜
(Y、Lu、Gd)2_nCanSi4N6+nC1_n:Ce3+、(ここでは、OSn^0.5)
Eu2+および/またはCe3+でドープされた、(Lu、Ca、Li、Mg、Y)alpha−SiAlON
(Ca、Sr、Ba)SiO2N2:Eu2+、Ce3+
電流/LED(平均) 0.120A
電流密度(平均)
200A/cm2
順方向電圧(平均)
3.3〜*3.8V
LEDへの給電(平均)14.7W
EQE
55%
紫色出力
7.5W
白色出力
2.5W
ルーメン/Wviolet
141
光出力
1060ルーメン
力率の向上または動作時における発光の「ちらつき」の低減のために、入力電圧波形を調整するためのコンデンサが設けられてもよい。一例として、電源に整合するLEDデバイス数が選択される(例えば、110VAC電源の場合、36個のLEDデバイスが整合する)。直列接続したLEDデバイスのアレイを用いて、以下に羅列するような高レベルの電流密度を利用することが可能である。
電流密度平均
200A/cm2
電流密度RMS.
272A/cm2
電流密度ピーク
500A/cm2
抵抗出力
1.7W
(例えば、36個のLEDデバイスに130オームが分散される)。例えば、LEDあたりの分散Vfは約0.44Vである。
Claims (20)
- 基板スケール処理を用いてLEDデバイスを製造する方法であって、
表面領域を有する基板部材を提供する工程と、
前記表面領域上に反射面を形成する工程であって、前記反射面は、反射率が少なくとも85%である点によって特徴付けられる工程と、
前記反射面上に空間を開けて配置された領域のアレイを形成する工程と、
複数のLEDデバイスを設ける工程であって、前記複数のLEDデバイスは、前記領域のアレイのうち対応する領域上に個々に配置される工程と、
を含む、方法。
- 前記基板部材はシリコン基板を含む、請求項1に記載の方法。
- 前記反射面は銀またはアルミニウム材料を含む、請求項1に記載の方法。
- 前記領域のアレイは、N個×M個のアレイを含み、Nは少なくとも整数の2であり、Mは少なくとも整数の1である、請求項1に記載の方法。
- 各LEDデバイスは、バルク基板材料から形成されたガリウムおよび窒素を含む、請求項1に記載の方法。
- 前記複数のLEDデバイスそれぞれを、波長変換材料を含む封入材料で封入する工程をさらに含む、請求項1に記載の方法。
- 前記波長変換材料は、蛍光体、半導体および発光材料のうち少なくとも1つを含む、請求項6に記載の方法。
- 前記反射面を形成する工程は、前記表面領域上に銀材料またはアルミニウムを堆積させる工程を含む、請求項1に記載の方法。
- 前記反射面を形成する工程は、
前記表面領域上に反射金属材料を形成する工程と、
前記金属材料上に少なくとも1つの誘電材料を形成する工程と、
誘電材料上に複数の導電性アレイ領域を形成する工程と、
を含む、請求項1に記載の方法。
- 前記反射面を形成する工程は、
前記基板表面領域上に誘電材料を形成する工程と、
前記誘電材料上に、複数の導電性反射アレイ領域を形成する工程と、
を含む、請求項1に記載の方法。
- 前記反射面を形成する工程は、
前記基板表面領域上に誘電材料を形成する工程と、
前記誘電材料上に複数の導電性アレイ領域を形成する工程と、
電気絶縁性を有するが光学的に反射性を持つ層を誘電材料または導電性アレイ領域の一部上に形成する工程と、
を含む、請求項1に記載の方法。
- 発光ダイオード装置であって、
表面領域を有する基板部材と、
前記表面領域上に設けられた反射層であって、第1の反射率レベルを有する反射層と、
前記反射層上に設けられた絶縁層と、
前記絶縁層上に設けられた領域のアレイと、
前記領域のアレイのうち対応する領域上に配置された複数のLEDデバイスと、
を含む、装置。
- 前記領域のアレイはそれぞれ、導電性パターンを含む、請求項12に記載の装置。
- 前記反射層および前記絶縁層の反射率の合計は93%を超える、請求項12に記載の装置。
- 前記基板の導電率は40W/(m−K)を超える、請求項12に記載の装置。
- 前記絶縁層は窒化シリコン(SiN)材料を含む、請求項12に記載の装置。
- LED装置であって、
表面領域を有する基板と、
前記表面領域上に設けられた反射層であって、第1の反射率レベルによって特徴付けられる反射層と、
前記反射層上の絶縁層と、
前記絶縁層上に配置された導電性領域のアレイと、
複数のLEDデバイスであって、前記アレイ領域それぞれの上に個々に配置されるLEDデバイスと、
前記複数のLEDデバイス上に設けられたカバー部材と、
を含む、装置。
- 前記導電性領域のアレイに接続された整流回路をさらに含む、請求項17に記載の装置。
- 前記整流回路に電気的に結合されたレジスタをさらに含む、請求項18に記載の装置。
- 前記複数のLEDデバイスは、第1のLED組および第2のLED組を含み、前記LED組はそれぞれ、直列接続された複数のLEDデバイスを含み、前記第1のLED組および前記第2のLED組は相互に平行に構成される、請求項17に記載の装置。
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US13/019,897 | 2011-02-02 | ||
PCT/US2011/023622 WO2011097393A1 (en) | 2010-02-03 | 2011-02-03 | White light apparatus and method |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20180021694A (ko) * | 2015-05-15 | 2018-03-05 | 오스람 게엠베하 | 연결 캐리어를 제조하기 위한 방법, 연결 캐리어 및 연결 캐리어를 구비한 광전자 반도체 컴포넌트 |
JP2020107873A (ja) * | 2018-12-25 | 2020-07-09 | 同泰電子科技股▲フン▼有限公司 | 高反射率基板構造及びその製造方法 |
Families Citing this family (138)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8847249B2 (en) | 2008-06-16 | 2014-09-30 | Soraa, Inc. | Solid-state optical device having enhanced indium content in active regions |
US20100006873A1 (en) * | 2008-06-25 | 2010-01-14 | Soraa, Inc. | HIGHLY POLARIZED WHITE LIGHT SOURCE BY COMBINING BLUE LED ON SEMIPOLAR OR NONPOLAR GaN WITH YELLOW LED ON SEMIPOLAR OR NONPOLAR GaN |
US8805134B1 (en) | 2012-02-17 | 2014-08-12 | Soraa Laser Diode, Inc. | Methods and apparatus for photonic integration in non-polar and semi-polar oriented wave-guided optical devices |
US10036099B2 (en) | 2008-08-07 | 2018-07-31 | Slt Technologies, Inc. | Process for large-scale ammonothermal manufacturing of gallium nitride boules |
US8243426B2 (en) | 2008-12-31 | 2012-08-14 | Apple Inc. | Reducing optical effects in a display |
US8247886B1 (en) | 2009-03-09 | 2012-08-21 | Soraa, Inc. | Polarization direction of optical devices using selected spatial configurations |
US8252662B1 (en) | 2009-03-28 | 2012-08-28 | Soraa, Inc. | Method and structure for manufacture of light emitting diode devices using bulk GaN |
US8299473B1 (en) | 2009-04-07 | 2012-10-30 | Soraa, Inc. | Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors |
US8294179B1 (en) | 2009-04-17 | 2012-10-23 | Soraa, Inc. | Optical device structure using GaN substrates and growth structures for laser applications |
US8837545B2 (en) | 2009-04-13 | 2014-09-16 | Soraa Laser Diode, Inc. | Optical device structure using GaN substrates and growth structures for laser applications |
US8254425B1 (en) | 2009-04-17 | 2012-08-28 | Soraa, Inc. | Optical device structure using GaN substrates and growth structures for laser applications |
US8634442B1 (en) | 2009-04-13 | 2014-01-21 | Soraa Laser Diode, Inc. | Optical device structure using GaN substrates for laser applications |
US8242522B1 (en) | 2009-05-12 | 2012-08-14 | Soraa, Inc. | Optical device structure using non-polar GaN substrates and growth structures for laser applications in 481 nm |
CN102396083B (zh) | 2009-04-13 | 2015-12-16 | 天空激光二极管有限公司 | 用于激光器应用的使用gan衬底的光学装置结构 |
US8416825B1 (en) | 2009-04-17 | 2013-04-09 | Soraa, Inc. | Optical device structure using GaN substrates and growth structure for laser applications |
US8791499B1 (en) | 2009-05-27 | 2014-07-29 | Soraa, Inc. | GaN containing optical devices and method with ESD stability |
US10108079B2 (en) | 2009-05-29 | 2018-10-23 | Soraa Laser Diode, Inc. | Laser light source for a vehicle |
US9829780B2 (en) | 2009-05-29 | 2017-11-28 | Soraa Laser Diode, Inc. | Laser light source for a vehicle |
US8427590B2 (en) | 2009-05-29 | 2013-04-23 | Soraa, Inc. | Laser based display method and system |
US9250044B1 (en) | 2009-05-29 | 2016-02-02 | Soraa Laser Diode, Inc. | Gallium and nitrogen containing laser diode dazzling devices and methods of use |
US8247887B1 (en) | 2009-05-29 | 2012-08-21 | Soraa, Inc. | Method and surface morphology of non-polar gallium nitride containing substrates |
US9800017B1 (en) | 2009-05-29 | 2017-10-24 | Soraa Laser Diode, Inc. | Laser device and method for a vehicle |
US8509275B1 (en) | 2009-05-29 | 2013-08-13 | Soraa, Inc. | Gallium nitride based laser dazzling device and method |
US8153475B1 (en) | 2009-08-18 | 2012-04-10 | Sorra, Inc. | Back-end processes for substrates re-use |
US9000466B1 (en) | 2010-08-23 | 2015-04-07 | Soraa, Inc. | Methods and devices for light extraction from a group III-nitride volumetric LED using surface and sidewall roughening |
US8207554B2 (en) * | 2009-09-11 | 2012-06-26 | Soraa, Inc. | System and method for LED packaging |
US8314429B1 (en) | 2009-09-14 | 2012-11-20 | Soraa, Inc. | Multi color active regions for white light emitting diode |
US8355418B2 (en) | 2009-09-17 | 2013-01-15 | Soraa, Inc. | Growth structures and method for forming laser diodes on {20-21} or off cut gallium and nitrogen containing substrates |
US8750342B1 (en) | 2011-09-09 | 2014-06-10 | Soraa Laser Diode, Inc. | Laser diodes with scribe structures |
US9293644B2 (en) | 2009-09-18 | 2016-03-22 | Soraa, Inc. | Power light emitting diode and method with uniform current density operation |
WO2011034541A1 (en) * | 2009-09-18 | 2011-03-24 | Hewlett-Packard Development Company, L.P. | Light-emitting diode including a metal-dielectric-metal structure |
US9583678B2 (en) | 2009-09-18 | 2017-02-28 | Soraa, Inc. | High-performance LED fabrication |
US8933644B2 (en) | 2009-09-18 | 2015-01-13 | Soraa, Inc. | LED lamps with improved quality of light |
WO2011035265A1 (en) | 2009-09-18 | 2011-03-24 | Soraa, Inc. | Power light emitting diode and method with current density operation |
US9293667B2 (en) | 2010-08-19 | 2016-03-22 | Soraa, Inc. | System and method for selected pump LEDs with multiple phosphors |
US8269245B1 (en) | 2009-10-30 | 2012-09-18 | Soraa, Inc. | Optical device with wavelength selective reflector |
US8905588B2 (en) | 2010-02-03 | 2014-12-09 | Sorra, Inc. | System and method for providing color light sources in proximity to predetermined wavelength conversion structures |
US10147850B1 (en) | 2010-02-03 | 2018-12-04 | Soraa, Inc. | System and method for providing color light sources in proximity to predetermined wavelength conversion structures |
US8740413B1 (en) | 2010-02-03 | 2014-06-03 | Soraa, Inc. | System and method for providing color light sources in proximity to predetermined wavelength conversion structures |
US9927611B2 (en) | 2010-03-29 | 2018-03-27 | Soraa Laser Diode, Inc. | Wearable laser based display method and system |
US8451876B1 (en) | 2010-05-17 | 2013-05-28 | Soraa, Inc. | Method and system for providing bidirectional light sources with broad spectrum |
US9450143B2 (en) | 2010-06-18 | 2016-09-20 | Soraa, Inc. | Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices |
US8803452B2 (en) | 2010-10-08 | 2014-08-12 | Soraa, Inc. | High intensity light source |
US8816319B1 (en) | 2010-11-05 | 2014-08-26 | Soraa Laser Diode, Inc. | Method of strain engineering and related optical device using a gallium and nitrogen containing active region |
US8975615B2 (en) | 2010-11-09 | 2015-03-10 | Soraa Laser Diode, Inc. | Method of fabricating optical devices using laser treatment of contact regions of gallium and nitrogen containing material |
US9048170B2 (en) | 2010-11-09 | 2015-06-02 | Soraa Laser Diode, Inc. | Method of fabricating optical devices using laser treatment |
US8541951B1 (en) | 2010-11-17 | 2013-09-24 | Soraa, Inc. | High temperature LED system using an AC power source |
US8896235B1 (en) | 2010-11-17 | 2014-11-25 | Soraa, Inc. | High temperature LED system using an AC power source |
US9318875B1 (en) | 2011-01-24 | 2016-04-19 | Soraa Laser Diode, Inc. | Color converting element for laser diode |
US9025635B2 (en) | 2011-01-24 | 2015-05-05 | Soraa Laser Diode, Inc. | Laser package having multiple emitters configured on a support member |
US8786053B2 (en) | 2011-01-24 | 2014-07-22 | Soraa, Inc. | Gallium-nitride-on-handle substrate materials and devices and method of manufacture |
US9595813B2 (en) | 2011-01-24 | 2017-03-14 | Soraa Laser Diode, Inc. | Laser package having multiple emitters configured on a substrate member |
US9093820B1 (en) | 2011-01-25 | 2015-07-28 | Soraa Laser Diode, Inc. | Method and structure for laser devices using optical blocking regions |
US8324835B2 (en) * | 2011-02-11 | 2012-12-04 | Soraa, Inc. | Modular LED lamp and manufacturing methods |
US8643257B2 (en) | 2011-02-11 | 2014-02-04 | Soraa, Inc. | Illumination source with reduced inner core size |
US10036544B1 (en) | 2011-02-11 | 2018-07-31 | Soraa, Inc. | Illumination source with reduced weight |
US8525396B2 (en) * | 2011-02-11 | 2013-09-03 | Soraa, Inc. | Illumination source with direct die placement |
US8618742B2 (en) * | 2011-02-11 | 2013-12-31 | Soraa, Inc. | Illumination source and manufacturing methods |
US8686431B2 (en) | 2011-08-22 | 2014-04-01 | Soraa, Inc. | Gallium and nitrogen containing trilateral configuration for optical devices |
KR20130022595A (ko) * | 2011-08-25 | 2013-03-07 | 서울옵토디바이스주식회사 | 고전류 구동용 발광 소자 |
US9488324B2 (en) | 2011-09-02 | 2016-11-08 | Soraa, Inc. | Accessories for LED lamp systems |
US9176536B2 (en) | 2011-09-30 | 2015-11-03 | Apple, Inc. | Wireless display for electronic devices |
US8884517B1 (en) | 2011-10-17 | 2014-11-11 | Soraa, Inc. | Illumination sources with thermally-isolated electronics |
DE102012005654B4 (de) * | 2011-10-25 | 2021-03-04 | Schott Ag | Optischer Konverter für hohe Leuchtdichten |
US10043960B2 (en) * | 2011-11-15 | 2018-08-07 | Cree, Inc. | Light emitting diode (LED) packages and related methods |
US8912025B2 (en) | 2011-11-23 | 2014-12-16 | Soraa, Inc. | Method for manufacture of bright GaN LEDs using a selective removal process |
AT14124U1 (de) * | 2012-02-13 | 2015-04-15 | Tridonic Jennersdorf Gmbh | LED-Modul mit Flächenverguß |
JP2015509669A (ja) | 2012-03-06 | 2015-03-30 | ソラア インコーポレーテッドSoraa Inc. | 導波光効果を低減させる低屈折率材料層を有する発光ダイオード |
CN103367611B (zh) | 2012-03-28 | 2017-08-08 | 日亚化学工业株式会社 | 波长变换用无机成型体及其制造方法以及发光装置 |
US9099626B2 (en) | 2012-04-02 | 2015-08-04 | Jds Uniphase Corporation | Broadband dielectric reflectors for LED |
US8889517B2 (en) | 2012-04-02 | 2014-11-18 | Jds Uniphase Corporation | Broadband dielectric reflectors for LED with varying thickness |
EP2648237B1 (en) * | 2012-04-02 | 2019-05-15 | Viavi Solutions Inc. | Broadband dielectric reflectors for LED |
US8985794B1 (en) | 2012-04-17 | 2015-03-24 | Soraa, Inc. | Providing remote blue phosphors in an LED lamp |
DE202013012940U1 (de) * | 2012-05-04 | 2023-01-19 | Soraa, Inc. | LED-Lampen mit verbesserter Lichtqualität |
US10145026B2 (en) | 2012-06-04 | 2018-12-04 | Slt Technologies, Inc. | Process for large-scale ammonothermal manufacturing of semipolar gallium nitride boules |
US9879357B2 (en) | 2013-03-11 | 2018-01-30 | Tivra Corporation | Methods and systems for thin film deposition processes |
US9810942B2 (en) | 2012-06-15 | 2017-11-07 | Apple Inc. | Quantum dot-enhanced display having dichroic filter |
US8971368B1 (en) | 2012-08-16 | 2015-03-03 | Soraa Laser Diode, Inc. | Laser devices having a gallium and nitrogen containing semipolar surface orientation |
DE102012108719A1 (de) * | 2012-09-17 | 2014-03-20 | Alanod Gmbh & Co. Kg | Reflektor, Beleuchtungskörper mit einem derartigen Reflektor und Verwendung eines Basismaterials zu dessen Herstellung |
US9978904B2 (en) | 2012-10-16 | 2018-05-22 | Soraa, Inc. | Indium gallium nitride light emitting devices |
US9761763B2 (en) * | 2012-12-21 | 2017-09-12 | Soraa, Inc. | Dense-luminescent-materials-coated violet LEDs |
US8802471B1 (en) | 2012-12-21 | 2014-08-12 | Soraa, Inc. | Contacts for an n-type gallium and nitrogen substrate for optical devices |
US8964807B1 (en) | 2013-05-09 | 2015-02-24 | Soraa Laser Diode, Inc. | Magnesium based gettering regions for gallium and nitrogen containing laser diode devices |
CN104235641B (zh) * | 2013-06-09 | 2016-04-06 | 四川新力光源股份有限公司 | 超薄式led光引擎 |
US9166372B1 (en) | 2013-06-28 | 2015-10-20 | Soraa Laser Diode, Inc. | Gallium nitride containing laser device configured on a patterned substrate |
US8994033B2 (en) | 2013-07-09 | 2015-03-31 | Soraa, Inc. | Contacts for an n-type gallium and nitrogen substrate for optical devices |
DE102013013856A1 (de) | 2013-08-20 | 2014-02-27 | Daimler Ag | Leuchtdiode und Leuchtdiodenanordnung |
US9410664B2 (en) | 2013-08-29 | 2016-08-09 | Soraa, Inc. | Circadian friendly LED light source |
US9520695B2 (en) | 2013-10-18 | 2016-12-13 | Soraa Laser Diode, Inc. | Gallium and nitrogen containing laser device having confinement region |
US9368939B2 (en) | 2013-10-18 | 2016-06-14 | Soraa Laser Diode, Inc. | Manufacturable laser diode formed on C-plane gallium and nitrogen material |
US9362715B2 (en) | 2014-02-10 | 2016-06-07 | Soraa Laser Diode, Inc | Method for manufacturing gallium and nitrogen bearing laser devices with improved usage of substrate material |
US9379525B2 (en) | 2014-02-10 | 2016-06-28 | Soraa Laser Diode, Inc. | Manufacturable laser diode |
US9370071B2 (en) * | 2013-10-31 | 2016-06-14 | iLight, LLC | Lighting device |
US9419189B1 (en) | 2013-11-04 | 2016-08-16 | Soraa, Inc. | Small LED source with high brightness and high efficiency |
DE102013224600A1 (de) * | 2013-11-29 | 2015-06-03 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen eines optoelektronischen Bauelements |
EP3220429A1 (en) | 2014-02-05 | 2017-09-20 | Soraa Inc. | High-performance led fabrication |
US9209596B1 (en) | 2014-02-07 | 2015-12-08 | Soraa Laser Diode, Inc. | Manufacturing a laser diode device from a plurality of gallium and nitrogen containing substrates |
US9871350B2 (en) | 2014-02-10 | 2018-01-16 | Soraa Laser Diode, Inc. | Manufacturable RGB laser diode source |
US9520697B2 (en) | 2014-02-10 | 2016-12-13 | Soraa Laser Diode, Inc. | Manufacturable multi-emitter laser diode |
CN103872207A (zh) * | 2014-02-21 | 2014-06-18 | 东莞美盛电器制品有限公司 | 一种强光led光源模块及其生产工艺 |
CN103969860B (zh) * | 2014-05-26 | 2017-02-15 | 上海群英软件有限公司 | 干涉调制型显示装置 |
US9564736B1 (en) * | 2014-06-26 | 2017-02-07 | Soraa Laser Diode, Inc. | Epitaxial growth of p-type cladding regions using nitrogen gas for a gallium and nitrogen containing laser diode |
US9246311B1 (en) | 2014-11-06 | 2016-01-26 | Soraa Laser Diode, Inc. | Method of manufacture for an ultraviolet laser diode |
JPWO2016084437A1 (ja) * | 2014-11-28 | 2017-08-31 | シャープ株式会社 | 発光装置および照明器具 |
US9666677B1 (en) | 2014-12-23 | 2017-05-30 | Soraa Laser Diode, Inc. | Manufacturable thin film gallium and nitrogen containing devices |
US9653642B1 (en) | 2014-12-23 | 2017-05-16 | Soraa Laser Diode, Inc. | Manufacturable RGB display based on thin film gallium and nitrogen containing light emitting diodes |
USD776629S1 (en) * | 2015-02-06 | 2017-01-17 | Seoul Viosys Co., Ltd. | Light emitting diode |
USD770988S1 (en) * | 2015-02-06 | 2016-11-08 | Seoul Viosys Co., Ltd. | Light emitting diode |
USD761213S1 (en) * | 2015-04-02 | 2016-07-12 | Genesis Photonics Inc. | Light emitting diode module |
USD761214S1 (en) * | 2015-04-02 | 2016-07-12 | Genesis Photonics Inc. | Light emitting diode package |
US20160380045A1 (en) * | 2015-06-25 | 2016-12-29 | Tivra Corporation | Crystalline semiconductor growth on amorphous and poly-crystalline substrates |
US11437775B2 (en) | 2015-08-19 | 2022-09-06 | Kyocera Sld Laser, Inc. | Integrated light source using a laser diode |
US10938182B2 (en) | 2015-08-19 | 2021-03-02 | Soraa Laser Diode, Inc. | Specialized integrated light source using a laser diode |
US11437774B2 (en) | 2015-08-19 | 2022-09-06 | Kyocera Sld Laser, Inc. | High-luminous flux laser-based white light source |
US10879673B2 (en) | 2015-08-19 | 2020-12-29 | Soraa Laser Diode, Inc. | Integrated white light source using a laser diode and a phosphor in a surface mount device package |
US9787963B2 (en) | 2015-10-08 | 2017-10-10 | Soraa Laser Diode, Inc. | Laser lighting having selective resolution |
TWD186014S (zh) | 2016-09-29 | 2017-10-11 | 新世紀光電股份有限公司 | 發光二極體模組之部分 |
TWD188042S (zh) | 2016-09-29 | 2018-01-21 | 新世紀光電股份有限公司 | 發光二極體封裝體之部分 |
CN106531732A (zh) * | 2016-10-31 | 2017-03-22 | 努比亚技术有限公司 | 一种基板组件及终端 |
CN108870119A (zh) * | 2017-05-12 | 2018-11-23 | 深圳市光峰光电技术有限公司 | 波长转换装置及其制备方法、激光荧光转换型光源 |
CN109301080B (zh) * | 2017-07-24 | 2024-03-05 | 固安翌光科技有限公司 | 一种有机电致发光器件 |
US10771155B2 (en) | 2017-09-28 | 2020-09-08 | Soraa Laser Diode, Inc. | Intelligent visible light with a gallium and nitrogen containing laser source |
EP3474404B1 (en) * | 2017-10-23 | 2023-08-23 | Goodrich Lighting Systems GmbH | Exterior aircraft light unit and aircraft comprising the same |
US10861814B2 (en) * | 2017-11-02 | 2020-12-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integrated fan-out packages and methods of forming the same |
US10222474B1 (en) | 2017-12-13 | 2019-03-05 | Soraa Laser Diode, Inc. | Lidar systems including a gallium and nitrogen containing laser light source |
US10468552B2 (en) | 2018-03-30 | 2019-11-05 | Facebook Technologies, Llc | High-efficiency micro-LEDs |
US10622519B2 (en) | 2018-03-30 | 2020-04-14 | Facebook Technologies, Llc | Reduction of surface recombination losses in micro-LEDs |
US10551728B1 (en) | 2018-04-10 | 2020-02-04 | Soraa Laser Diode, Inc. | Structured phosphors for dynamic lighting |
US10374386B1 (en) * | 2018-06-07 | 2019-08-06 | Finisar Corporation | Chip on carrier |
US11013086B2 (en) * | 2018-12-12 | 2021-05-18 | i Sine Inc. | Methods and apparatus for delivery of constant magnitude power to LED strings |
US11239637B2 (en) | 2018-12-21 | 2022-02-01 | Kyocera Sld Laser, Inc. | Fiber delivered laser induced white light system |
US11421843B2 (en) | 2018-12-21 | 2022-08-23 | Kyocera Sld Laser, Inc. | Fiber-delivered laser-induced dynamic light system |
US12000552B2 (en) | 2019-01-18 | 2024-06-04 | Kyocera Sld Laser, Inc. | Laser-based fiber-coupled white light system for a vehicle |
US11884202B2 (en) | 2019-01-18 | 2024-01-30 | Kyocera Sld Laser, Inc. | Laser-based fiber-coupled white light system |
US10903623B2 (en) | 2019-05-14 | 2021-01-26 | Soraa Laser Diode, Inc. | Method and structure for manufacturable large area gallium and nitrogen containing substrate |
US11228158B2 (en) | 2019-05-14 | 2022-01-18 | Kyocera Sld Laser, Inc. | Manufacturable laser diodes on a large area gallium and nitrogen containing substrate |
US11309464B2 (en) | 2019-10-14 | 2022-04-19 | Facebook Technologies, Llc | Micro-LED design for chief ray walk-off compensation |
JP7398993B2 (ja) * | 2020-03-23 | 2023-12-15 | 株式会社ジャパンディスプレイ | 電極基板及び発光装置 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09199756A (ja) * | 1996-01-22 | 1997-07-31 | Toshiba Corp | 反射型光結合装置 |
JP2006164796A (ja) * | 2004-12-08 | 2006-06-22 | Sumitomo Electric Ind Ltd | ヘッドランプ |
JP2007507115A (ja) * | 2003-10-01 | 2007-03-22 | エナートロン, インコーポレイテッド | Led光エンジン用の方法および装置 |
WO2008091846A2 (en) * | 2007-01-22 | 2008-07-31 | Cree Led Lighting Solutions, Inc. | Illumination devices using externally interconnected arrays of light emitting devices, and methods of fabricating same |
US20090315057A1 (en) * | 2008-06-24 | 2009-12-24 | Sharp Kabushiki Kaisha | Light-emitting apparatus, surface light source, and method for manufacturing package for light-emitting apparatus |
Family Cites Families (112)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3922527A (en) * | 1974-12-26 | 1975-11-25 | Nat Forge Co | Temperature control apparatus |
CA1210132A (en) * | 1982-09-16 | 1986-08-19 | Tadao Kubodera | Television receiver |
JPH06267846A (ja) * | 1993-03-10 | 1994-09-22 | Canon Inc | ダイヤモンド電子装置およびその製造法 |
JP3623001B2 (ja) * | 1994-02-25 | 2005-02-23 | 住友電気工業株式会社 | 単結晶性薄膜の形成方法 |
US6104450A (en) * | 1996-11-07 | 2000-08-15 | Sharp Kabushiki Kaisha | Liquid crystal display device, and methods of manufacturing and driving same |
US6533874B1 (en) * | 1996-12-03 | 2003-03-18 | Advanced Technology Materials, Inc. | GaN-based devices using thick (Ga, Al, In)N base layers |
EP0985007B2 (en) * | 1997-02-24 | 2010-11-03 | Cabot Corporation | Oxygen-containing phosphor powders, methods for making phosphor powders and devices incorporating same |
WO1999023693A1 (en) * | 1997-10-30 | 1999-05-14 | Sumitomo Electric Industries, Ltd. | GaN SINGLE CRYSTALLINE SUBSTRATE AND METHOD OF PRODUCING THE SAME |
TW413956B (en) * | 1998-07-28 | 2000-12-01 | Sumitomo Electric Industries | Fluorescent substrate LED |
WO2001018872A1 (fr) * | 1999-09-07 | 2001-03-15 | Sixon Inc. | TRANCHE DE SiC, DISPOSITIF A SEMI-CONDUCTEUR DE SiC, ET PROCEDE DE PRODUCTION D'UNE TRANCHE DE SiC |
US6903376B2 (en) * | 1999-12-22 | 2005-06-07 | Lumileds Lighting U.S., Llc | Selective placement of quantum wells in flipchip light emitting diodes for improved light extraction |
US6680959B2 (en) * | 2000-07-18 | 2004-01-20 | Rohm Co., Ltd. | Semiconductor light emitting device and semiconductor laser |
US7053413B2 (en) * | 2000-10-23 | 2006-05-30 | General Electric Company | Homoepitaxial gallium-nitride-based light emitting device and method for producing |
WO2002041364A2 (en) * | 2000-11-16 | 2002-05-23 | Emcore Corporation | Led packages having improved light extraction |
US6547249B2 (en) * | 2001-03-29 | 2003-04-15 | Lumileds Lighting U.S., Llc | Monolithic series/parallel led arrays formed on highly resistive substrates |
US6939730B2 (en) * | 2001-04-24 | 2005-09-06 | Sony Corporation | Nitride semiconductor, semiconductor device, and method of manufacturing the same |
US6734530B2 (en) * | 2001-06-06 | 2004-05-11 | Matsushita Electric Industries Co., Ltd. | GaN-based compound semiconductor EPI-wafer and semiconductor element using the same |
JP3639807B2 (ja) * | 2001-06-27 | 2005-04-20 | キヤノン株式会社 | 光学素子及び製造方法 |
US6616734B2 (en) * | 2001-09-10 | 2003-09-09 | Nanotek Instruments, Inc. | Dynamic filtration method and apparatus for separating nano powders |
US6995032B2 (en) * | 2002-07-19 | 2006-02-07 | Cree, Inc. | Trench cut light emitting diodes and methods of fabricating same |
ATE543221T1 (de) * | 2002-09-19 | 2012-02-15 | Cree Inc | Leuchtstoffbeschichtete leuchtdioden mit verjüngten seitenwänden und herstellungsverfahren dafür |
US7009199B2 (en) * | 2002-10-22 | 2006-03-07 | Cree, Inc. | Electronic devices having a header and antiparallel connected light emitting diodes for producing light from AC current |
US6864641B2 (en) * | 2003-02-20 | 2005-03-08 | Visteon Global Technologies, Inc. | Method and apparatus for controlling light emitting diodes |
US7157745B2 (en) * | 2004-04-09 | 2007-01-02 | Blonder Greg E | Illumination devices comprising white light emitting diodes and diode arrays and method and apparatus for making them |
US6989807B2 (en) * | 2003-05-19 | 2006-01-24 | Add Microtech Corp. | LED driving device |
JP2005085942A (ja) * | 2003-09-08 | 2005-03-31 | Seiko Epson Corp | 光モジュール、光伝送装置 |
US7341880B2 (en) * | 2003-09-17 | 2008-03-11 | Luminus Devices, Inc. | Light emitting device processes |
DE602004019169D1 (de) * | 2003-09-22 | 2009-03-12 | Fujifilm Corp | Feine organische Pigmentpartikel und Verfahren zu deren Herstellung |
US7012279B2 (en) * | 2003-10-21 | 2006-03-14 | Lumileds Lighting U.S., Llc | Photonic crystal light emitting device |
US7009215B2 (en) * | 2003-10-24 | 2006-03-07 | General Electric Company | Group III-nitride based resonant cavity light emitting devices fabricated on single crystal gallium nitride substrates |
US7329887B2 (en) * | 2003-12-02 | 2008-02-12 | 3M Innovative Properties Company | Solid state light device |
JP5719493B2 (ja) * | 2003-12-09 | 2015-05-20 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | 表面粗化による高効率の(B,Al,Ga,In)Nベースの発光ダイオード |
US7318651B2 (en) * | 2003-12-18 | 2008-01-15 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Flash module with quantum dot light conversion |
US20060038542A1 (en) * | 2003-12-23 | 2006-02-23 | Tessera, Inc. | Solid state lighting device |
US7384481B2 (en) * | 2003-12-29 | 2008-06-10 | Translucent Photonics, Inc. | Method of forming a rare-earth dielectric layer |
US7374807B2 (en) * | 2004-01-15 | 2008-05-20 | Nanosys, Inc. | Nanocrystal doped matrixes |
EP1598681A3 (de) * | 2004-05-17 | 2006-03-01 | Carl Zeiss SMT AG | Optische Komponente mit gekrümmter Oberfläche und Mehrlagenbeschichtung |
US6956246B1 (en) * | 2004-06-03 | 2005-10-18 | Lumileds Lighting U.S., Llc | Resonant cavity III-nitride light emitting devices fabricated by growth substrate removal |
ATE524839T1 (de) * | 2004-06-30 | 2011-09-15 | Cree Inc | Verfahren zum kapseln eines lichtemittierenden bauelements und gekapselte lichtemittierende bauelemente im chip-massstab |
EP1787336B1 (en) * | 2004-06-30 | 2016-01-20 | Seoul Viosys Co., Ltd | Light emitting element comprising a plurality of electrically connected light emitting cells and method of manufacturing the same |
US7252408B2 (en) * | 2004-07-19 | 2007-08-07 | Lamina Ceramics, Inc. | LED array package with internal feedback and control |
KR20070058465A (ko) * | 2004-08-06 | 2007-06-08 | 미쓰비시 가가꾸 가부시키가이샤 | Ga 함유 질화물 반도체 단결정, 그 제조 방법, 그리고 그결정을 사용한 기판 및 디바이스 |
JP2006086516A (ja) * | 2004-08-20 | 2006-03-30 | Showa Denko Kk | 半導体発光素子の製造方法 |
US7737459B2 (en) * | 2004-09-22 | 2010-06-15 | Cree, Inc. | High output group III nitride light emitting diodes |
DE102005045589A1 (de) * | 2004-09-24 | 2006-04-06 | Epistar Corp. | Flüssigkristalldisplay |
KR100661708B1 (ko) * | 2004-10-19 | 2006-12-26 | 엘지이노텍 주식회사 | 질화물 반도체 발광소자 및 그 제조방법 |
US20060097385A1 (en) * | 2004-10-25 | 2006-05-11 | Negley Gerald H | Solid metal block semiconductor light emitting device mounting substrates and packages including cavities and heat sinks, and methods of packaging same |
US7199918B2 (en) * | 2005-01-07 | 2007-04-03 | Miradia Inc. | Electrical contact method and structure for deflection devices formed in an array configuration |
US7897420B2 (en) * | 2005-01-11 | 2011-03-01 | SemiLEDs Optoelectronics Co., Ltd. | Light emitting diodes (LEDs) with improved light extraction by roughening |
US7358542B2 (en) * | 2005-02-02 | 2008-04-15 | Lumination Llc | Red emitting phosphor materials for use in LED and LCD applications |
TW201443990A (zh) | 2005-03-10 | 2014-11-16 | Univ California | 用於生長平坦半極性的氮化鎵之技術 |
US7483466B2 (en) * | 2005-04-28 | 2009-01-27 | Canon Kabushiki Kaisha | Vertical cavity surface emitting laser device |
US7358543B2 (en) * | 2005-05-27 | 2008-04-15 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Light emitting device having a layer of photonic crystals and a region of diffusing material and method for fabricating the device |
TWI377602B (en) * | 2005-05-31 | 2012-11-21 | Japan Science & Tech Agency | Growth of planar non-polar {1-100} m-plane gallium nitride with metalorganic chemical vapor deposition (mocvd) |
KR101351396B1 (ko) * | 2005-06-01 | 2014-02-07 | 재팬 사이언스 앤드 테크놀로지 에이젼시 | 반극성 (Ga,Al,In,B)N 박막들, 헤테로구조들, 및소자들의 성장 및 제조에 대한 기술 |
TWI397199B (zh) * | 2005-06-21 | 2013-05-21 | Japan Science & Tech Agency | 用於製造經偏光發光二極體之封裝技術 |
US20070018182A1 (en) * | 2005-07-20 | 2007-01-25 | Goldeneye, Inc. | Light emitting diodes with improved light extraction and reflectivity |
US7799236B2 (en) * | 2005-08-30 | 2010-09-21 | Lg Chem, Ltd. | Gathering method and apparatus of powder separated soluble component |
EP1938385B1 (en) * | 2005-09-07 | 2014-12-03 | Cree, Inc. | Transistors with fluorine treatment |
US8661660B2 (en) * | 2005-09-22 | 2014-03-04 | The Artak Ter-Hovhanissian Patent Trust | Process for manufacturing LED lighting with integrated heat sink |
US20080099777A1 (en) * | 2005-10-19 | 2008-05-01 | Luminus Devices, Inc. | Light-emitting devices and related systems |
US20070096239A1 (en) * | 2005-10-31 | 2007-05-03 | General Electric Company | Semiconductor devices and methods of manufacture |
EP1788619A3 (en) * | 2005-11-18 | 2009-09-09 | Samsung Electronics Co., Ltd. | Semiconductor device and method of fabricating the same |
US7148515B1 (en) * | 2006-01-07 | 2006-12-12 | Tyntek Corp. | Light emitting device having integrated rectifier circuit in substrate |
WO2007109153A2 (en) * | 2006-03-16 | 2007-09-27 | Radpax, Inc. | Rapid film bonding using pattern printed adhesive |
JP4819577B2 (ja) * | 2006-05-31 | 2011-11-24 | キヤノン株式会社 | パターン転写方法およびパターン転写装置 |
CN102361052B (zh) * | 2006-06-23 | 2015-09-30 | Lg电子株式会社 | 具有垂直拓扑的发光二极管及其制造方法 |
JP4957110B2 (ja) * | 2006-08-03 | 2012-06-20 | 日亜化学工業株式会社 | 発光装置 |
TWI318013B (en) * | 2006-09-05 | 2009-12-01 | Epistar Corp | A light emitting device and the manufacture method thereof |
US7705276B2 (en) * | 2006-09-14 | 2010-04-27 | Momentive Performance Materials Inc. | Heater, apparatus, and associated method |
US8362603B2 (en) * | 2006-09-14 | 2013-01-29 | Luminus Devices, Inc. | Flexible circuit light-emitting structures |
JP4246242B2 (ja) * | 2006-09-27 | 2009-04-02 | 三菱電機株式会社 | 半導体発光素子 |
US7714348B2 (en) * | 2006-10-06 | 2010-05-11 | Ac-Led Lighting, L.L.C. | AC/DC light emitting diodes with integrated protection mechanism |
JP5480624B2 (ja) * | 2006-10-08 | 2014-04-23 | モーメンティブ・パフォーマンス・マテリアルズ・インク | 窒化物結晶の形成方法 |
TWI371870B (en) * | 2006-11-08 | 2012-09-01 | Epistar Corp | Alternate current light-emitting device and fabrication method thereof |
US9024349B2 (en) * | 2007-01-22 | 2015-05-05 | Cree, Inc. | Wafer level phosphor coating method and devices fabricated utilizing method |
TW200834962A (en) * | 2007-02-08 | 2008-08-16 | Touch Micro System Tech | LED array package structure having Si-substrate and method of making the same |
KR101239853B1 (ko) * | 2007-03-13 | 2013-03-06 | 서울옵토디바이스주식회사 | 교류용 발광 다이오드 |
KR100867551B1 (ko) * | 2007-05-18 | 2008-11-10 | 삼성전기주식회사 | Led 어레이 구동 장치 |
JP5044329B2 (ja) * | 2007-08-31 | 2012-10-10 | 株式会社東芝 | 発光装置 |
WO2009035648A1 (en) * | 2007-09-14 | 2009-03-19 | Kyma Technologies, Inc. | Non-polar and semi-polar gan substrates, devices, and methods for making them |
US8058663B2 (en) * | 2007-09-26 | 2011-11-15 | Iii-N Technology, Inc. | Micro-emitter array based full-color micro-display |
US8783887B2 (en) * | 2007-10-01 | 2014-07-22 | Intematix Corporation | Color tunable light emitting device |
US20110017298A1 (en) * | 2007-11-14 | 2011-01-27 | Stion Corporation | Multi-junction solar cell devices |
US7985970B2 (en) * | 2009-04-06 | 2011-07-26 | Cree, Inc. | High voltage low current surface-emitting LED |
US20100006873A1 (en) * | 2008-06-25 | 2010-01-14 | Soraa, Inc. | HIGHLY POLARIZED WHITE LIGHT SOURCE BY COMBINING BLUE LED ON SEMIPOLAR OR NONPOLAR GaN WITH YELLOW LED ON SEMIPOLAR OR NONPOLAR GaN |
WO2010005914A1 (en) * | 2008-07-07 | 2010-01-14 | Soraa, Inc. | High quality large area bulk non-polar or semipolar gallium based substrates and methods |
EP2319086A4 (en) * | 2008-08-04 | 2014-08-27 | Soraa Inc | WHITE LIGHTING DEVICES WITH NON POLAR OR SEMI-POLAR GALLIUM-HARDENED MATERIALS AND INFLUENCES |
KR101332794B1 (ko) * | 2008-08-05 | 2013-11-25 | 삼성전자주식회사 | 발광 장치, 이를 포함하는 발광 시스템, 상기 발광 장치 및발광 시스템의 제조 방법 |
US20100117118A1 (en) * | 2008-08-07 | 2010-05-13 | Dabiran Amir M | High electron mobility heterojunction device |
JP4599442B2 (ja) * | 2008-08-27 | 2010-12-15 | 株式会社東芝 | 半導体発光素子の製造方法 |
US8143769B2 (en) * | 2008-09-08 | 2012-03-27 | Intematix Corporation | Light emitting diode (LED) lighting device |
US8188486B2 (en) * | 2008-09-16 | 2012-05-29 | Osram Sylvania Inc. | Optical disk for lighting module |
US8084763B2 (en) * | 2008-10-31 | 2011-12-27 | The Regents Of The University Of California | Optoelectronic device based on non-polar and semi-polar aluminum indium nitride and aluminum indium gallium nitride alloys |
US8062916B2 (en) * | 2008-11-06 | 2011-11-22 | Koninklijke Philips Electronics N.V. | Series connected flip chip LEDs with growth substrate removed |
US20100117106A1 (en) * | 2008-11-07 | 2010-05-13 | Ledengin, Inc. | Led with light-conversion layer |
US7923741B1 (en) * | 2009-01-05 | 2011-04-12 | Lednovation, Inc. | Semiconductor lighting device with reflective remote wavelength conversion |
US8410717B2 (en) * | 2009-06-04 | 2013-04-02 | Point Somee Limited Liability Company | Apparatus, method and system for providing AC line power to lighting devices |
US20110038154A1 (en) * | 2009-08-11 | 2011-02-17 | Jyotirmoy Chakravarty | System and methods for lighting and heat dissipation |
US20110056429A1 (en) * | 2009-08-21 | 2011-03-10 | Soraa, Inc. | Rapid Growth Method and Structures for Gallium and Nitrogen Containing Ultra-Thin Epitaxial Structures for Devices |
US8350273B2 (en) * | 2009-08-31 | 2013-01-08 | Infineon Technologies Ag | Semiconductor structure and a method of forming the same |
US9293667B2 (en) * | 2010-08-19 | 2016-03-22 | Soraa, Inc. | System and method for selected pump LEDs with multiple phosphors |
US20110068700A1 (en) * | 2009-09-21 | 2011-03-24 | Suntec Enterprises | Method and apparatus for driving multiple LED devices |
JP5387302B2 (ja) * | 2009-09-30 | 2014-01-15 | 住友電気工業株式会社 | Iii族窒化物半導体レーザ素子、及びiii族窒化物半導体レーザ素子を作製する方法 |
KR20120099709A (ko) * | 2009-11-03 | 2012-09-11 | 더 리전츠 오브 더 유니버시티 오브 캘리포니아 | 하나 이상의 표면 위의 아연 산화물 나노로드 어레이들을 이용하는 발광 다이오드 구조물 및 이러한 아연 산화물 나노로드 어레이들을 저비용으로 제조하는 방법 |
US7893445B2 (en) * | 2009-11-09 | 2011-02-22 | Cree, Inc. | Solid state emitter package including red and blue emitters |
US9450143B2 (en) * | 2010-06-18 | 2016-09-20 | Soraa, Inc. | Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices |
US20120007102A1 (en) * | 2010-07-08 | 2012-01-12 | Soraa, Inc. | High Voltage Device and Method for Optical Devices |
US8210698B2 (en) * | 2010-07-28 | 2012-07-03 | Bridgelux, Inc. | Phosphor layer having enhanced thermal conduction and light sources utilizing the phosphor layer |
US8040071B2 (en) * | 2010-12-14 | 2011-10-18 | O2Micro, Inc. | Circuits and methods for driving light sources |
CN102954366B (zh) * | 2011-08-16 | 2016-06-22 | 惠州元晖光电股份有限公司 | 具有光切换阵列的光引擎 |
US20130022758A1 (en) * | 2012-01-27 | 2013-01-24 | Soraa, Inc. | Method and Resulting Device for Processing Phosphor Materials in Light Emitting Diode Applications |
-
2011
- 2011-02-02 US US13/019,897 patent/US20110186874A1/en not_active Abandoned
- 2011-02-03 JP JP2012552086A patent/JP2013519233A/ja active Pending
- 2011-02-03 DE DE112011100183T patent/DE112011100183T5/de not_active Withdrawn
- 2011-02-03 WO PCT/US2011/023622 patent/WO2011097393A1/en active Application Filing
- 2011-02-03 DE DE202011110024U patent/DE202011110024U1/de not_active Expired - Lifetime
- 2011-02-03 CN CN2011800176770A patent/CN103038565A/zh active Pending
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09199756A (ja) * | 1996-01-22 | 1997-07-31 | Toshiba Corp | 反射型光結合装置 |
JP2007507115A (ja) * | 2003-10-01 | 2007-03-22 | エナートロン, インコーポレイテッド | Led光エンジン用の方法および装置 |
JP2006164796A (ja) * | 2004-12-08 | 2006-06-22 | Sumitomo Electric Ind Ltd | ヘッドランプ |
WO2008091846A2 (en) * | 2007-01-22 | 2008-07-31 | Cree Led Lighting Solutions, Inc. | Illumination devices using externally interconnected arrays of light emitting devices, and methods of fabricating same |
JP2010517274A (ja) * | 2007-01-22 | 2010-05-20 | クリー レッド ライティング ソリューションズ、インコーポレイテッド | 外部で相互接続された発光素子のアレイを用いる照明デバイスとその製造方法 |
US20090315057A1 (en) * | 2008-06-24 | 2009-12-24 | Sharp Kabushiki Kaisha | Light-emitting apparatus, surface light source, and method for manufacturing package for light-emitting apparatus |
JP2010034487A (ja) * | 2008-06-24 | 2010-02-12 | Sharp Corp | 発光装置、面光源、および発光装置用パッケージの製造方法 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20180021694A (ko) * | 2015-05-15 | 2018-03-05 | 오스람 게엠베하 | 연결 캐리어를 제조하기 위한 방법, 연결 캐리어 및 연결 캐리어를 구비한 광전자 반도체 컴포넌트 |
JP2018517307A (ja) * | 2015-05-15 | 2018-06-28 | オスラム ゲーエムベーハーOSRAM GmbH | 接続支持体を製造するための方法、接続支持体、ならびに接続支持体を備えているオプトエレクトロニクス半導体モジュール |
KR102527885B1 (ko) | 2015-05-15 | 2023-04-28 | 알랜노드 게엠베하 운트 코. 카게 | 연결 캐리어를 제조하기 위한 방법, 연결 캐리어 및 연결 캐리어를 구비한 광전자 반도체 컴포넌트 |
JP2020107873A (ja) * | 2018-12-25 | 2020-07-09 | 同泰電子科技股▲フン▼有限公司 | 高反射率基板構造及びその製造方法 |
US11140773B2 (en) | 2018-12-25 | 2021-10-05 | Uniflex Technology Inc. | Substrate structure with high reflectance and method for manufacturing the same |
US11147157B2 (en) | 2018-12-25 | 2021-10-12 | Uniflex Technology Inc. | Substrate structure with high reflectance and method for manufacturing the same |
Also Published As
Publication number | Publication date |
---|---|
WO2011097393A1 (en) | 2011-08-11 |
DE112011100183T5 (de) | 2012-12-06 |
US20110186874A1 (en) | 2011-08-04 |
CN103038565A (zh) | 2013-04-10 |
DE202011110024U1 (de) | 2012-09-06 |
WO2011097393A9 (en) | 2012-11-29 |
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