CN103872207A - 一种强光led光源模块及其生产工艺 - Google Patents

一种强光led光源模块及其生产工艺 Download PDF

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CN103872207A
CN103872207A CN201410059021.0A CN201410059021A CN103872207A CN 103872207 A CN103872207 A CN 103872207A CN 201410059021 A CN201410059021 A CN 201410059021A CN 103872207 A CN103872207 A CN 103872207A
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郑香奕
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Tu Bo
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DONGGUAN MEISHENG ELECTRICAL APPLIANCE PRODUCT Co Ltd
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Priority to US14/272,875 priority patent/US20150241002A1/en
Priority to EP14167763.3A priority patent/EP2911194A1/en
Priority to TW103117377A priority patent/TW201533931A/zh
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Abstract

本发明涉及LED技术领域,特指一种强光LED光源模块的生产工艺,其包括以下步骤:a.制备整体LED晶片,在LED晶片中的一个大尺寸非电极所在表面镀上一层高折射率薄膜;b.将镀好高折射率薄膜的LED晶片按需分割呈LED晶片单体;c.将LED晶片单体固晶于基片表面,已镀高折射率薄膜的一面与基片接触,并焊线连接LED晶片单体;d.在LED晶片单体的剩余五个表面也镀上一层高折射率薄膜;e.按需组装或封装成完整的LED光源模块。本发明的有益效果主要体现在:其一,LED晶片单体发光进入封装材料前,由于LED晶片单体周边均镀有高折射率薄膜,各面之间呈90°,起到倍增出光面的效果,而且大大降低了全反射率,增大出光效率、增强光线强度的效果。

Description

一种强光LED光源模块及其生产工艺
技术领域:
本发明涉及LED技术领域,特指一种强光LED光源模块的生产工艺及该强光LED光源模块。
背景技术:
现有LED光源模块普遍是在铝基板或铝支架上固定LED晶片,LED晶片通过金属线与设置铝基板或铝支架上的铜电极连接,再用环氧树脂等材料进行封装制得。由于铝基板、铝支架都是无法透光的,因此,这些LED光源都只能从单面出光,无法实现全角度出光。另外,LED晶片本身出光面有限以及受全反射等因素影响,其发光也无法完全进入封装材料,再者光线从封装材料进入空气界面时也会受到全反射等影响,因此整个LED光源的出光效率较低,光强度较弱。
发明内容:
本发明的目的在于克服现有产品的不足之处,提供一种强光LED光源模块的生产工艺及该强光LED光源模块。
本发明实现其目的采用的技术方案是:一种强光LED光源模块的生产工艺,其包括以下步骤:
a.制备整体LED晶片,在LED晶片中的一个大尺寸非电极所在表面镀上一层高折射率薄膜;
b.将镀好高折射率薄膜的LED晶片按需分割呈LED晶片单体;
c.将LED晶片单体固晶于基片表面,已镀高折射率薄膜的一面与基片接触,并焊线连接LED晶片单体;
d.在LED晶片单体的剩余五个表面也镀上一层高折射率薄膜;
e.按需组装或封装成完整的LED光源模块。
上述工艺中,所述的高折射率薄膜的厚度为0.1μm-1.0μm。
所述的高折射率薄膜为TiO2或荧光物质薄膜,或者采用其他高折射率材料形成。
同时,本发明还提供一种强光LED光源模块,包括基板、若干LED晶片单体、电极片、连接LED晶片单体和电极片的金属线以及封装料体,于所述LED晶片单体的六个表面均镀有一层高折射率薄膜,所述金属线穿过高折射率薄膜与LED晶片单体的电极连接。
上述光源模块中,所述的高折射率薄膜的厚度为0.1μm-1.0μm。所述的高折射率薄膜为TiO2或荧光物质薄膜,或者采用其他高折射率材料形成。
所述基板由与封装料体材质相同的透光材料成型,这样能使整体LED光源全角度出光。
于所述LED光源模块的封装料体表面还成型有若干圆锥状凸点。
本发明的有益效果主要体现在:其一,LED晶片单体发光进入封装材料前,由于LED晶片单体周边均镀有高折射率薄膜,各面之间呈90°,增大了LED晶片单体的出光面,起到倍增出光面的效果,而且大大降低了全反射率,使LED晶片单体的发光均进入封装料体中,从而起到增大出光效率、增强光线强度的效果;其二,在LED光源的封装料体表面设置圆锥凸点,在光线从封装料体进入空气时能破坏全反射(即即便在一面被反射,也会从另一面射出),进一步提高出光率和出光强度;其三,直接以封装用的透光材料来成型制作基板,因此,基板具有很好的透光性,当LED晶片固定并封装后,可以实现全角度出光,产品的视觉效果极佳。
附图说明:
图1是本发明一种实施例强光LED光源模块的剖面示意图;
图2是图1中的局部放大图。
具体实施方式:
下面结合具体实施例和附图对本发明进一步说明。
本发明所述的一种强光LED光源模块的生产工艺,其包括以下步骤:
a.制备整体LED晶片,在LED晶片中的一个大尺寸非电极所在表面镀上一层高折射率薄膜;
b.将镀好高折射率薄膜的LED晶片按需分割呈LED晶片单体;
c.将LED晶片单体固晶于基片表面,已镀高折射率薄膜的一面与基片接触,并焊线连接LED晶片单体;
d.在LED晶片单体的剩余五个表面也镀上一层高折射率薄膜;
e.按需组装或封装成完整的LED光源模块。
上述工艺中,所述的高折射率薄膜的厚度为0.1μm-1.0μm。所述的高折射率薄膜为TiO2或荧光物质薄膜,或者采用其他高折射率材料形成。高折射率薄膜可通过化学气相沉积(MOCVD、CVD)、物理真空蒸镀或者溅镀以及溶剂成膜等各种镀膜方式完成。
结合图1、图2所示,本发明还提供一种强光LED光源模块,包括基板1、若干LED晶片单体2、电极片3、连接LED晶片单体2和电极片3的金属线4以及封装料体5,于所述LED晶片单体2的六个表面均镀有一层高折射率薄膜21,所述金属线4穿过高折射率薄膜21与LED晶片单体2的电极连接。
所述基板1由与封装料体5材质相同的透光材料成型,这样能使整体LED光源全角度出光。封装用的透光材料例如可以是环氧树脂、橡胶、塑料等材料,这些材料中可以通过掺杂荧光粉来改变基板1和封装料体的颜色,从而改变出光颜色。
上述光源模块中,所述的高折射率薄膜21的厚度为0.1μm-1.0μm。所述的高折射率薄膜为TiO2或荧光物质薄膜,或者采用其他高折射率材料形成。光线从高折射率薄膜21射入封装料体5时,只要arcsin(封装材料折射率/高折射率薄膜折率)≥π/4时,可降低全反射,倍增出光面,即LED晶片单体的发光均可被取到封装料体5中,提高出光率。
于所述LED光源模块的封装料体5表面还成型有若干圆锥状凸点51,且圆锥状凸点51的圆锥顶角小于2arcsin(1/封装材料折射率),此时能破坏全反射,获得最大出光率。
本发明的有益效果主要体现在:其一,LED晶片单体发光进入封装材料前,由于LED晶片单体周边均镀有高折射率薄膜,各面之间呈90°,增大了LED晶片单体的出光面,起到倍增出光面的效果,而且大大降低了全反射率,使LED晶片单体的发光均进入封装料体中,从而起到增大出光效率、增强光线强度的效果;其二,在LED光源的封装料体表面设置圆锥凸点,在光线从封装料体进入空气时能破坏全反射(即即便在一面被反射,也会从另一面射出),进一步提高出光率和出光强度;其三,直接以封装用的透光材料来成型制作基板,因此,基板具有很好的透光性,当LED晶片固定并封装后,可以实现全角度出光,产品的视觉效果极佳。

Claims (8)

1.一种强光LED光源模块的生产工艺,其特征在于:其包括以下步骤:
a.制备整体LED晶片,在LED晶片中的一个大尺寸非电极所在表面镀上一层高折射率薄膜;
b.将镀好高折射率薄膜的LED晶片按需分割呈LED晶片单体;
c.将LED晶片单体固晶于基片表面,已镀高折射率薄膜的一面与基片接触,并焊线连接LED晶片单体;
d.在LED晶片单体的剩余五个表面也镀上一层高折射率薄膜;
e.按需组装或封装成完整的LED光源模块。
2.根据权利要求1所述的强光LED光源模块的生产工艺,其特征在于:所述的高折射率薄膜的厚度为0.1μm-1.0μm。
3.根据权利要求1或2所述的强光LED光源模块的生产工艺,其特征在于:所述的高折射率薄膜为TiO2或荧光物质薄膜,或者采用其他高折射率材料形成。
4.一种强光LED光源模块,包括基板、若干LED晶片单体、电极片、连接LED晶片单体和电极片的金属线以及封装料体,其特征在于:于所述LED晶片单体的六个表面均镀有一层高折射率薄膜,所述金属线穿过高折射率薄膜与LED晶片单体的电极连接。
5.根据权利要求5所述的强光LED光源模块,其特征在于:所述的高折射率薄膜的厚度为0.1μm-1.0μm。
6.根据权利要求5或6所述的强光LED光源模块,其特征在于:所述的高折射率薄膜为TiO2或荧光物质薄膜,或者采用其他高折射率材料形成。
7.根据权利要求5所述的强光LED光源模块,其特征在于:所述基板由与封装料体材质相同的透光材料成型。
8.根据权利要求5所述的强光LED光源模块,其特征在于:于所述LED光源模块的封装料体表面还成型有若干圆锥状凸点。
CN201410059021.0A 2014-02-21 2014-02-21 一种强光led光源模块及其生产工艺 Pending CN103872207A (zh)

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US14/272,875 US20150241002A1 (en) 2014-02-21 2014-05-08 Strong light light-emitting diode (led) light source module and production process thereof
EP14167763.3A EP2911194A1 (en) 2014-02-21 2014-05-09 Light-emitting diode (LED) light source module and production process thereof
TW103117377A TW201533931A (zh) 2014-02-21 2014-05-16 一種強光led光源模組及其生產工藝
JP2014113646A JP2015159265A (ja) 2014-02-21 2014-06-01 強光led光源モジュールとその製造方法

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CN104409619A (zh) * 2014-12-10 2015-03-11 天津中环电子照明科技有限公司 一次光学透镜的直下式背光led结构及封装方法
CN104700726A (zh) * 2015-04-01 2015-06-10 矽照光电(厦门)有限公司 一种led显示装置
CN109073165A (zh) * 2016-03-24 2018-12-21 奥斯兰姆奥普托半导体有限责任公司 具有发光半导体芯片的灯丝、照明装置和用于制造灯丝的方法

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DE102017112642A1 (de) 2017-06-08 2018-12-13 Osram Opto Semiconductors Gmbh Led-filament
CN109713110A (zh) * 2017-10-26 2019-05-03 深圳市聚飞光电股份有限公司 芯片级封装led及其制作方法
US11536446B2 (en) * 2020-08-07 2022-12-27 Apple Inc. Electronic device with visual feedback

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002261325A (ja) * 2001-03-02 2002-09-13 Nichia Chem Ind Ltd 発光装置およびその製造方法
CN101290958A (zh) * 2007-04-20 2008-10-22 亿光电子工业股份有限公司 发光二极管封装结构
CN101320773A (zh) * 2008-07-11 2008-12-10 深圳市聚飞光电有限公司 提高led外量子效率的封装方法及led封装结构
CN101556023A (zh) * 2009-05-14 2009-10-14 上海广电光电子有限公司 带广角透镜的led光源
CN101614327A (zh) * 2008-06-27 2009-12-30 富准精密工业(深圳)有限公司 发光二极管
EP2535640A1 (en) * 2010-09-08 2012-12-19 Zhejiang Ledison Optoelectronics Co., Ltd. Led lamp bulb and led lighting bar capable of emitting light over 4

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6661167B2 (en) * 2001-03-14 2003-12-09 Gelcore Llc LED devices
US20070080636A1 (en) * 2005-10-07 2007-04-12 Taiwan Oasis Technology Co., Ltd. White multi-wavelength LED & its manufacturing process
US8105853B2 (en) * 2008-06-27 2012-01-31 Bridgelux, Inc. Surface-textured encapsulations for use with light emitting diodes
US20110186874A1 (en) * 2010-02-03 2011-08-04 Soraa, Inc. White Light Apparatus and Method
KR101495580B1 (ko) * 2010-04-26 2015-02-25 파나소닉 주식회사 리드 프레임, 배선판, 발광 유닛, 조명 장치
WO2011142097A1 (ja) * 2010-05-13 2011-11-17 パナソニック株式会社 実装用基板及びその製造方法、発光モジュール並びに照明装置
WO2011145794A1 (ko) * 2010-05-18 2011-11-24 서울반도체 주식회사 파장변환층을 갖는 발광 다이오드 칩과 그 제조 방법, 및 그것을 포함하는 패키지 및 그 제조 방법
CN104205371B (zh) * 2012-05-31 2017-03-01 松下知识产权经营株式会社 Led模块和制备led模块的方法、照明装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002261325A (ja) * 2001-03-02 2002-09-13 Nichia Chem Ind Ltd 発光装置およびその製造方法
CN101290958A (zh) * 2007-04-20 2008-10-22 亿光电子工业股份有限公司 发光二极管封装结构
CN101614327A (zh) * 2008-06-27 2009-12-30 富准精密工业(深圳)有限公司 发光二极管
CN101320773A (zh) * 2008-07-11 2008-12-10 深圳市聚飞光电有限公司 提高led外量子效率的封装方法及led封装结构
CN101556023A (zh) * 2009-05-14 2009-10-14 上海广电光电子有限公司 带广角透镜的led光源
EP2535640A1 (en) * 2010-09-08 2012-12-19 Zhejiang Ledison Optoelectronics Co., Ltd. Led lamp bulb and led lighting bar capable of emitting light over 4

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104409619A (zh) * 2014-12-10 2015-03-11 天津中环电子照明科技有限公司 一次光学透镜的直下式背光led结构及封装方法
CN104700726A (zh) * 2015-04-01 2015-06-10 矽照光电(厦门)有限公司 一种led显示装置
CN109073165A (zh) * 2016-03-24 2018-12-21 奥斯兰姆奥普托半导体有限责任公司 具有发光半导体芯片的灯丝、照明装置和用于制造灯丝的方法
CN109073165B (zh) * 2016-03-24 2021-03-30 奥斯兰姆奥普托半导体有限责任公司 具有发光半导体芯片的灯丝、照明装置和用于制造灯丝的方法

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