CN101263612B - 发光器件 - Google Patents

发光器件 Download PDF

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Publication number
CN101263612B
CN101263612B CN2006800334063A CN200680033406A CN101263612B CN 101263612 B CN101263612 B CN 101263612B CN 2006800334063 A CN2006800334063 A CN 2006800334063A CN 200680033406 A CN200680033406 A CN 200680033406A CN 101263612 B CN101263612 B CN 101263612B
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China
Prior art keywords
light
luminescent device
emitting component
line
metal
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Expired - Fee Related
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CN2006800334063A
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CN101263612A (zh
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安田刚规
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Resonac Holdings Corp
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Showa Denko KK
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Priority claimed from PCT/JP2006/318462 external-priority patent/WO2007032520A1/en
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Abstract

一种发光器件，其在发光元件中设置有接合线，所述接合线为主要由金或铜形成且至少部分地涂覆有这样的物质的金属细线，所述物质能够提高从所述发光元件发射的光的波长的反射系数。

Description

发光器件
相关申请的交叉引用
本申请是基于35U.S.C.§111(a)提交的申请，根据35U.S.C.§119(e)(1)，要求根据35U.S.C.§111(b)于2005年9月20日提交的临时申请No.60/718,323和2005年9月13日提交的日本专利申请No.2005-264754的优先权。
技术领域
本发明涉及一种发光器件，具体地说，涉及一种能够使其中使用的接合线(bonding wire)引起提高的光反射的发光器件。
背景技术
LED朝向更高输出和更高效率的趋势已扩大了对于LED被发现的应用的范围。除了在彩色指示器和室外大显示器方面的常规应用之外，LED已快速增加了在用于移动式电话的显示的背光源、头灯和用于照明的光源方面的使用量。为了响应对于LED的这些需要，对于LED实现输出和效率的进一步提高变得有必要。
公知有两种由氮化物化合物半导体形成的绿色至紫外发光二极管2，也就是使得氮化物化合物半导体层叠在蓝宝石衬底的正面上、在氮化物化合物半导体的正面侧形成p电极和n电极，并且用两根Au线1将电极连接到封装引线5(参考图1)的类型，以及使得氮化物化合物半导体层叠在SiC衬底上、在衬底的背面侧形成n电极且在氮化物化合物半导体的正面侧形成p电极，并且通过一根Au线1将衬底的背面侧连接到封装引线的类型。在附图中，参考标号3表示密封树脂，而标号4表示模塑体。在这些结构中，Au线构成这样的部件，由于它们吸收绿色至紫外区域的光，因此引起发光输出的损失。关于由Au线引起的吸收的问题，已公开了一种方法，该方法通过使树脂塑模完全包围发光元件，以包含荧光材料，该荧光材料能够将所发射的光转换成波长比所发射的光的波长长的可见光，从而能够使光在冲击Au线之前转换成较长波长的光，在该较长波长下Au线呈现低的光吸收率，因此减少损失(参见日本专利No.2900928)。
作为用于涂覆用于线接合(wire bonding)中的金属细线的技术，已公开了例如为了降低生长成本而用锡对金线的涂覆(参见JP-A SHO62-227592)。为了调和成本的降低和粘着(adhesive)特性的提高，已公开了用于连接半导体元件的接合线，该线由铜、铝或金的金属细线形成，并使细线的表面被金属涂覆，该金属具有比该线的金属更高的纯度，但与该线的种类相同(参见JP-A SHO 62-287633)。然而，这些方法不能在接合线的部分提高光反射系数。
本发明旨在提供一种应付由Au或Cu的接合线引起的光吸收，即金属导致的对绿色至紫外范围的光的吸收的损失，还提供一种发光器件，该发光器件由于减少了损失而呈现高输出和高效率。本发明还旨在促进提高不仅绿色至紫外单色短波长发光元件而且白色LED或任何颜色LED的输出和效率，该白色LED或任何颜色LED中包括利用绿色至紫外短波长发光元件作为激励源的波长转换物质。
本发明在于通过用这样的物质涂覆用作接合线的Au线或Cu线的表面来实现上述目的，该物质能够提高从LED发射的光的反射系数，从而为接合线提供提高的光反射系数。
发明内容
本发明的第一方面提供一种发光器件，所述发光器件在发光元件中设置有接合线，所述接合线为主要由金或铜形成且至少部分地涂覆有这样的物质的金属细线，所述物质能够提高从所述发光元件发射的光的波长的反射系数。
本发明的第二方面提供在第一方面中所述的发光器件，其中所述物质为包含选自Ag、Al和Rh的至少一者的金属。
本发明的第三方面提供在第一或第二方面中所述的发光器件，其中所述金属细线具有范围在10μm至1000μm的厚度。
本发明的第四方面提供在第一至第三方面中任何一方面的发光器件，其中通过选自电解镀敷方法、无电镀敷方法、真空沉积方法、化学气相沉积(CVD)方法、溅射方法、溶解方法、等离子体喷雾方法、超声方法、包含金属粉末的树脂涂覆方法、还原方法和离子镀敷方法的任何方法涂覆所述金属细线。
本发明的第五方面提供在第一至第四方面中所述的发光器件，其中所述物质具有范围在1nm至所述金属细线的直径的10％的厚度。
本发明的第六方面提供在第一至第五方面中所述的发光器件，其中用选自Ag、Al、Rh以及包含Ag、Al和Rh的至少一者的金属中的至少一者涂覆用于在其上安装所述发光元件的引线面的一部分或大部分。
本发明的第七方面提供在第一至第六方面中所述的发光器件，其包含能够将由所述发光元件发射的光的部分或全部转换成长波长光的荧光材料。
通过使得可以基本上完全抑制Au或Cu线对光的吸收，本发明已实现了对半导体发光器件的输出和效率的进一步提高。本发明还实现了对不仅绿色至紫外单色短波长发光器件而且对白色LED和有色LED的输出和效率的提高的促进，该白色LED和有色LED中包含利用绿色至紫外短波长发光元件作为激励源的波长转换物质。
由于金较少与其它材料反应，在金线与树脂之间容易出现孔隙。通过用其它金属涂覆金线，可以减少孔隙。
附图说明
图1是示意性截面图，示例了常规表面安装LED的结构。
图2是示意性截面图，示例了本发明所预期的表面安装LED的结构。
图3是示意性截面图，示例了包含荧光材料的本发明的表面安装LED的结构。
具体实施方式
在图2中，以截面图示例了本发明的发光器件的一个实例。
在图中，参考标号6表示用具有高的光反射系数的物质涂覆的Au或Cu线。至少部分地进行的涂覆就足够。虽然仅要求涂覆物质具有比Au和Cu高的光反射系数，但从反射特性的观点，优选其为选自Ag、Al、Rh以及包含Ag、Al和Rh的至少一者的金属中的至少一者。当涂覆物质包含这样的金属时，金属的含量优选为大于等于50质量％。
Au或Cu线的厚度优选在10μm至1000μm的范围内。该范围的原因在于，因为其中使用的芯片具有0.3mm见方的大致尺寸且其中使用的用于连接金属细线的衬垫具有100μm见方的大致尺寸，管壳型(shell-type)LED使用具有几十μm厚度的金属细线。因为其中使用的芯片具有几mm的尺寸，功率模块使用具有几百μm厚度的金属细线。涂覆层的厚度优选在1nm至金属细线的直径的10％的范围内。该范围的原因在于，不足1nm的厚度太小，不能提高反射系数，而超过金属细线的直径的10％的厚度导致在线接合的过程期间削弱粘着性。在此可使用的涂覆方法包括例如电解镀敷方法、无电镀敷方法、真空沉积方法、化学气相沉积(CVD)方法、溅射方法、溶解方法、等离子体喷雾方法、超声方法、包含金属粉末的树脂涂覆方法、还原方法和离子镀敷方法，并且还包括在粗线上厚涂覆之后的延展线方法。
参考附图，参考标号2表示发光元件，标号3表示密封树脂，标号4表示树脂模塑体，标号5表示引线，以及标号6表示用Ag涂覆的Au线。
本发明可以应用到所有发光器件，从总是经历线接合的发光二极管(LED)和垂直腔面发射激光器(VCSEL)开始。
本发明优选应用到这样的发光器件，该发光器件包括总是发射其中Au或Cu线显著发生吸收的紫外至绿色短波长范围的光的AlGaInN基和其它氮化物化合物半导体基、ZnO基和其它氧化物化合物半导体基、CdZnSSe基和其它硒化物基、以及硫化物化合物半导体基发光器件。本发明毫不引起适于总是发射绿色至红色光的包括AlGaInP基和其它磷化物基以及AlGaAs基和其它砷化物基发光元件的发光元件的任何种类的问题，可以优选应用到用于邻接蓝色或绿色发光元件配置的所谓的3合1封装(具有置于一个封装中的三种颜色的芯片的LED封装)中的红色发光元件。
本发明有效地用于这种类型的发光元件，该类型的发光元件层叠在导电衬底上，在衬底的外延面侧和背面侧上设置有电极，并且适于通过一根或多根接合线将外延面侧连接到封装的外部引线5，且通过导电粘合剂将衬底侧连接到封装的外部引线5。
在本发明的发光器件中，优选用选自Ag、Al、Rh以及包含Ag、Al和Rh的至少一者的金属中的至少一者涂覆引线的将要在其上安装发光元件的一部分或大部分。当包含这样的金属时，其含量优选为大于等于50质量％。因此，提高了光反射系数，且增大了发光输出。
本发明还有效地用于其中发光元件安装在子装配台(sub-mount)上且子装配台通过一根或多根线连接到封装的外部引线的情况。
本发明在所有可想到的尺寸和形状，包括小于0.2mm见方至超过1mm见方的芯片尺寸以及方形、矩形、圆形和椭圆形的形状的发光元件中呈现其效果。
本发明可以与荧光材料结合。当将其应用于由用黄色发光的荧光材料涂覆蓝色发光元件所产生的白色发光元件或者由用红色、绿色和蓝色荧光材料涂覆紫外发光元件所产生的白色发光元件时，其充分呈现其效果。替代涂覆，还可以通过分散在密封树脂中来沉积荧光材料。在图3中示出了该沉积的实例。在该图中，参考标号7表示包含荧光材料的密封树脂。
本发明可应用于利用线接合的所有封装和模块，例如，管壳型封装(DOME)、利用PCB(印刷电路板)基底的表面安装二极管(SMD)封装、利用顶视型和侧视型以及其它水平型引线框架的SMD、包括功率LED封装的单封装、罐型封装和其它定制封装、板上尖头(TOB)和膜上尖头(TOF)。
下面将基于实例具体说明本发明。本发明不限于该实例。
在图2中示例了为了对表面安装LED提高反射系数的目的而用Ag涂覆的Au线的应用的实例。
LED芯片以使n电极和p电极形成在外延膜表面侧上的结构由层叠在蓝宝石衬底上的AlGaInN基化合物半导体晶体构成。所测得的边为0.35mm见方，高度为0.1mm。p型透明电极由ITO(氧化铟钛)形成，且用于线接合的不透明衬垫在电极的一部分中形成。在通过蚀刻露出的n型接触层上形成n电极，在n电极中同样地形成用于线接合的衬垫。在p电极和n电极中的衬垫的最外表面由Au形成。
表面安装LED的封装的测得的面积为3.5mm×2.8mm，高度为1.8mm。在引线框架上，以这样的结构由具有高反射系数的白色树脂形成杯状物，在该结构中，在杯状物的底面中露出一对内引线。用Ag涂覆这些内引线的最外表面，并且最小化引线对之间的间隙，以便杯状物的几乎整个底面构成Ag表面。内引线对的形状不对称，且内引线中的一条伸出，以便占据封装轴线附近。
在轴线附近伸出的一条内引线上使用热固性树脂设置LED芯片。在炉子中使热固性树脂硬化后，使用一对接合线利用线接合器连接LED芯片和表面安装LED封装的内引线。用于该情况中的接合线通过用具有4N纯度的Ag涂覆具有4N纯度的Au线的表面而产生。Au线的直径测得为25μm，Ag涂层的厚度测得为约0.5μm。通过电镀实现在Au线上的Ag涂覆。
由于与Au的量相比，Ag的量可忽略，已经过球接合的芯片上的球切变强度未呈现出与在没有Ag涂覆的Au线上的球切变强度的显著差异。与封装的内引线的接合也未呈现出与没有Ag涂覆的Au线的显著差异。
然后，用热固性透明硅树脂密封杯状物的内部。通过在炉子中硬化树脂，完成表面安装LED的样品。
比较二十(20)个没有Ag涂覆的样品和同样多的经过Ag涂覆的样品在20mA的电流流动期间的光输出。前者的样品呈现15.3mW的平均光输出，而后者的样品呈现16.0mW的平均光输出，表明在输出方面后者的样品超出前者的样品约4.6％。所发射的光的波长的平均值分别为460.1nm和459.9nm，上述差异对波长没有影响。
由没有Ag涂覆的样品和经过Ag涂覆的样品，分别制备用硅树脂混合黄色荧光材料而产生的样品。所产生的样品的数量各为20个。发现不包括Ag涂覆的样品的色度坐标的平均值(x，y)＝(0.320，0.326)且光通量的平均值为4.12lm，而发现包括Ag涂覆的样品的色度坐标的平均值(x，y)＝(0.321，0.327)且光通量的平均值为4.28lm，确定总光通量增加了3.9％。另外，发光效率的值分别为58.9lm/W和61.1lm/W，确定通过Ag涂覆减少了效率损失。
工业适用性
本发明能够提供这样的光源，其抑制了包括用Au或Cu线接合的发光元件的输出损失且提高了元件的发光效率。本发明所预期的发光元件对于能源的节省作出贡献，且真正地富有工业实用性。

Claims (7)

1.一种发光器件，其在发光元件中设置有接合线，所述接合线为主要由金或铜形成且至少部分地涂覆有这样的物质的金属细线，所述物质能够提高从所述发光元件发射的光的反射系数。
2.根据权利要求1的发光器件，其中所述物质为包含选自Ag、Al和Rh的至少一者的金属。
3.根据权利要求1或2的发光器件，其中所述金属细线具有范围在10μm至1000μm的厚度。
4.根据权利要求1的发光器件，其中通过选自电解镀敷方法、无电镀敷方法、真空沉积方法、化学气相沉积方法、溅射方法、溶解方法、等离子体喷雾方法、超声方法、包含金属粉末的树脂涂覆方法、还原方法和离子镀敷方法的任何方法涂覆所述金属细线。
5.根据权利要求1的发光器件，其中所述物质具有范围在1nm至所述金属细线的直径的10％的厚度。
6.根据权利要求1的发光器件，其中用选自Ag、Al、Rh以及包含Ag、Al和Rh的至少一者的金属中的至少一者涂覆用于在其上安装所述发光元件的引线面的一部分或大部分。
7.根据权利要求1的发光器件，其包含能够将由所述发光元件发射的光的部分或全部转换成长波长光的荧光材料。
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CN101263612A (zh) 2008-09-10
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TW200729547A (en) 2007-08-01
KR100978028B1 (ko) 2010-08-25

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