TW201533931A - 一種強光ｌｅｄ光源模組及其生產工藝 - Google Patents

一種強光ｌｅｄ光源模組及其生產工藝 Download PDF

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TW201533931A
TW201533931A TW103117377A TW103117377A TW201533931A TW 201533931 A TW201533931 A TW 201533931A TW 103117377 A TW103117377 A TW 103117377A TW 103117377 A TW103117377 A TW 103117377A TW 201533931 A TW201533931 A TW 201533931A
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source module
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Xiang-Yi Zheng
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Dongguan Meisheng Electrical Appliance Products Co Ltd
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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Abstract

本發明涉及LED技術領域，特指一種強光LED光源模組的生產工藝，其包括以下步驟：a.製備整體LED晶片，在LED晶片中的一個大尺寸非電極所在表面鍍上一層高折射率薄膜；b.將鍍好高折射率薄膜的LED晶片按需分割呈LED晶片單體；c.將LED晶片單體固晶於基片表面，已鍍高折射率薄膜的一面與基片接觸，並焊線連接LED晶片單體；d.在LED晶片單體的剩餘五個表面也鍍上一層高折射率薄膜；e.按需組裝或封裝成完整的LED光源模組。本發明的有益效果主要體現在：其一，LED晶片單體發光進入封裝材料前，由於LED晶片單體周邊均鍍有高折射率薄膜，各面之間呈90°，起到倍增出光面的效果，而且大大降低了全反射率，增大出光效率、增強光線強度的效果。

Description

一種強光LED光源模組及其生產工藝
本發明涉及LED技術領域，特指一種強光LED光源模組的生產工藝及該強光LED光源模組。
現有LED光源模組普遍是在鋁基板或鋁支架上固定LED晶片，LED晶片通過金屬線與設置鋁基板或鋁支架上的銅電極連接，再使用環氧樹脂等材料進行封裝而製得。由於鋁基板、鋁支架都是無法透光的，因此，這些LED光源都只能從單面出光，無法實現全角度出光。另外，LED晶片本身出光面有限以及受全反射等因素影響，其發光也無法完全進入封裝材料，再者，光線從封裝材料進入空氣介面時也會受到全反射等影響，因此整個LED光源的出光效率較低，光強度較弱。
本發明之目的在於克服現有產品的不足之處，提供一種強光LED光源模組的生產工藝及該強光LED光源模組。
本發明實現其目的所採用的技術方案是：一種強光LED光源模組的生產工藝，其包括以下步驟：a.製備整體LED晶片，在LED晶片中的一個大尺寸非電極所在表面鍍上一層高折射率薄膜；b.將鍍好高折射率薄膜的LED晶片按需分割成LED晶片單體；c.將LED晶片單體固晶於基片表面，已鍍高折射率薄膜的一面與基片接觸，並焊線連接LED晶片單體；d.在LED晶片單體的剩餘五個表面也鍍上一層高折射率薄 膜；e.按需組裝或封裝成完整的LED光源模組。
於上述工藝中，所述的高折射率薄膜的厚度為0.1μm-10μm。
所述的高折射率薄膜為TiO2或螢光物質薄膜，或者採用其他高折射率材料形成。
同時，本發明還提供一種強光LED光源模組，包括基板、若干LED晶片單體、電極片、連接LED晶片單體和電極片的金屬線以及封裝料體，於所述LED晶片單體的六個表面均鍍有一層高折射率薄膜，所述金屬線穿過高折射率薄膜與LED晶片單體的電極連接。
上述光源模組中，所述的高折射率薄膜的厚度為0.1μm-10μm。所述的高折射率薄膜為TiO2或螢光物質薄膜，或者採用其他高折射率材料形成。
所述基板由與封裝料體材質相同的透光材料成型，這樣能使整體LED光源全角度出光。
於所述LED光源模組的封裝料體表面還成型有若干圓錐狀凸點。
本發明的有益效果主要體現在：其一，LED晶片單體發光進入封裝材料前，由於LED晶片單體周邊均鍍有高折射率薄膜，各面之間呈90°，增大了LED晶片單體的出光面，起到倍增出光面的效果，而且大大降低了全反射率，使LED晶片單體的發光均進入封裝料體中，從而起到增大出光效率、增強光線強度的效果；其二，在LED光源的封裝料體表面設置圓錐凸點，在光線從封裝料體進入空氣時能破壞全反射(即即便在一面被反射，也會從另一面射出)，進一步提高出光率和出光強度；其三，直接以封裝用的透光材料來成型製作基板，因此，基板具有很好的透光性，當LED晶片固定並封裝後，可以實現全角度出光，產品的視覺效果極佳。
1‧‧‧基板
2‧‧‧LED晶片單體
21‧‧‧高折射率薄膜
3‧‧‧電極片
4‧‧‧金屬線
5‧‧‧封裝料體
51‧‧‧圓錐狀凸點
圖1是本發明一種實施例強光LED光源模組的剖面示意圖；圖2是圖1中的局部放大圖。
下面結合具體實施例和附圖對本發明進一步說明。
本發明所述的一種強光LED(發光二極體)光源模組的生產工藝，其包括以下步驟：a.製備整體LED晶片，在LED晶片中的一個大尺寸非電極所在表面鍍上一層高折射率薄膜；b.將鍍有高折射率薄膜的LED晶片按所需分割成LED晶片單體；c.將LED晶片單體固晶於基片表面，LED晶片已鍍有高折射率薄膜的一面與基片接觸，並焊線連接LED晶片單體；d.在LED晶片單體的剩餘五個表面也鍍上一層高折射率薄膜；e.按需組裝或封裝成完整的LED光源模組。
上述工藝中，所述的高折射率薄膜的厚度為0.1μm-10μm。所述的高折射率薄膜為TiO2或螢光物質薄膜，或者採用其他高折射率材料形成。高折射率薄膜可通過化學氣相沉積(MOCVD、CVD)、物理真空蒸鍍或者濺鍍以及溶劑成膜等各種鍍膜方式完成。
結合圖1、圖2所示，本發明還提供一種強光LED光源模組，包括基板1、若干LED晶片單體2、電極片3、連接LED晶片單體2和電極片3的金屬線4以及封裝料體5，於所述LED晶片單體2的六個表面皆鍍有一層高折射率薄膜21，所述金屬線4穿過高折射率薄膜21與LED晶片單體2的電極連接。
所述基板1由與封裝料體5材質相同的透光材料成型，如此能使整體LED光源全角度出光。封裝用的透光材料，例如可以是環氧樹脂、橡膠、塑膠等材料，這些材料中可以通過摻雜螢光粉 來改變基板1和封裝料體的顏色，從而改變出光顏色。
上述光源模組中，所述的高折射率薄膜21的厚度為0.1μm-10μm。所述的高折射率薄膜為TiO2或螢光物質薄膜，或者採用其他高折射率材料形成。光線從高折射率薄膜21射入封裝料體5時，只要arcsin(封裝材料折射率/高折射率薄膜折率)π/4時，可降低全反射，倍增出光面，亦即，LED晶片單體的發光可完全射入封裝料體5中，提高出光率。
於所述LED光源模組的封裝料體5表面還成型有若干圓錐狀凸點51，且圓錐狀凸點51的圓錐頂角小於2arcsin(1/封裝材料折射率)，如此能破壞全反射，獲得最大出光率。
本發明的有益效果主要體現在：其一，LED晶片單體發光進入封裝材料前，由於LED晶片單體周邊均鍍有高折射率薄膜，各面之間呈90°，增大了LED晶片單體的出光面，起到倍增出光面的效果，而且大大降低了全反射率，使LED晶片單體的發光均進入封裝料體中，從而起到增大出光效率、增強光線強度的效果；其二，在LED光源的封裝料體表面設置圓錐凸點，在光線從封裝料體進入空氣時能破壞全反射(即即便在一面被反射，也會從另一面射出)，進一步提高出光率和出光強度；其三，直接以封裝用的透光材料來成型製作基板，因此，基板具有很好的透光性，當LED晶片固定並封裝後，可以實現全角度出光，產品的視覺效果極佳。
惟以上所述者，僅為本發明之實施例而已，當不能以此限定本發明實施之範圍；故，凡依本發明申請專利範圍及說明書內容所作之簡單的等效變化與修飾，皆應仍屬本發明專利涵蓋之範圍內。
1‧‧‧基板
2‧‧‧LED晶片單體
21‧‧‧高折射率薄膜
4‧‧‧金屬線
5‧‧‧封裝料體
51‧‧‧圓錐狀凸點

Claims (8)

  1. 一種強光LED光源模組的生產工藝，其特徵在於：其包括以下步驟：a.製備整體LED晶片，於該LED晶片中的一個大尺寸非電極所在表面鍍上一層高折射率薄膜；b.將鍍有該高折射率薄膜的該LED晶片分割成LED晶片單體；c.將該LED晶片單體固晶於基片表面，該LED晶片已鍍有該高折射率薄膜的一面與該基片接觸，並焊線連接該LED晶片單體；d.於該LED晶片單體的剩餘五個表面也鍍上一層高折射率薄膜；e.組裝或封裝成完整的LED光源模組。
  2. 如申請專利範圍第1項所述之強光LED光源模組的生產工藝，其特徵在於：該高折射率薄膜的厚度為0.1μm-10μm。
  3. 如申請專利範圍第1項或第2項所述之強光LED光源模組的生產工藝，其特徵在於：該高折射率薄膜為TiO2或螢光物質薄膜，或者採用其他高折射率材料形成。
  4. 一種強光LED光源模組，包括基板、若干LED晶片單體、電極片、連接該LED晶片單體與該電極片的金屬線以及封裝料體，其特徵在於：於該LED晶片單體的六個表面均鍍有一層高折射率薄膜，該金屬線穿過該高折射率薄膜與該LED晶片單體的電極連接。
  5. 如申請專利範圍第4項所述之強光LED光源模組，其特徵在於：該高折射率薄膜的厚度為0.1μm-10μm。
  6. 如申請專利範圍第4項或第5項所述之強光LED光源模組，其特徵在於：該高折射率薄膜為TiO2或螢光物質薄膜，或者採用其他高折射率材料形成。
  7. 如申請專利範圍第5項所述之強光LED光源模組，其特徵在 於：該基板由與該封裝料體材質相同的透光材料成型。
  8. 如申請專利範圍第5項所述之強光LED光源模組，其特徵在於：於該LED光源模組的該封裝料體表面更成型有若干圓錐狀凸點。
TW103117377A 2014-02-21 2014-05-16 一種強光ｌｅｄ光源模組及其生產工藝 TW201533931A (zh)

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