JP2013518433A - Icデバイスのエンハンストされた熱放散のための突出するtsv - Google Patents

Icデバイスのエンハンストされた熱放散のための突出するtsv Download PDF

Info

Publication number
JP2013518433A
JP2013518433A JP2012551157A JP2012551157A JP2013518433A JP 2013518433 A JP2013518433 A JP 2013518433A JP 2012551157 A JP2012551157 A JP 2012551157A JP 2012551157 A JP2012551157 A JP 2012551157A JP 2013518433 A JP2013518433 A JP 2013518433A
Authority
JP
Japan
Prior art keywords
tsv
substrate
die
vias
tsvs
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2012551157A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013518433A5 (enExample
Inventor
和明 馬渡
健吾 青屋
義克 梅田
エイ ウエスト ジェフェリー
Original Assignee
日本テキサス・インスツルメンツ株式会社
テキサス インスツルメンツ インコーポレイテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日本テキサス・インスツルメンツ株式会社, テキサス インスツルメンツ インコーポレイテッド filed Critical 日本テキサス・インスツルメンツ株式会社
Publication of JP2013518433A publication Critical patent/JP2013518433A/ja
Publication of JP2013518433A5 publication Critical patent/JP2013518433A5/ja
Pending legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10Bump connectors ; Manufacturing methods related thereto
    • H01L24/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/34Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367Cooling facilitated by shape of device
    • H01L23/3677Wire-like or pin-like cooling fins or heat sinks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481Internal lead connections, e.g. via connections, feedthrough structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10D89/00
    • H01L25/0657Stacked arrangements of devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001Internal layers
    • H01L2224/05099Material
    • H01L2224/051Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05117Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05124Aluminium [Al] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001Internal layers
    • H01L2224/05099Material
    • H01L2224/051Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05147Copper [Cu] as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/13005Structure
    • H01L2224/13009Bump connector integrally formed with a via connection of the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/12Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001Core members of the bump connector
    • H01L2224/13099Material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16235Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a via metallisation of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/04All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L2225/065All the devices being of a type provided for in the same main group of the same subclass of class H10
    • H01L2225/06503Stacked arrangements of devices
    • H01L2225/06513Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/04All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L2225/065All the devices being of a type provided for in the same main group of the same subclass of class H10
    • H01L2225/06503Stacked arrangements of devices
    • H01L2225/06517Bump or bump-like direct electrical connections from device to substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/04All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L2225/065All the devices being of a type provided for in the same main group of the same subclass of class H10
    • H01L2225/06503Stacked arrangements of devices
    • H01L2225/06541Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/04All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L2225/065All the devices being of a type provided for in the same main group of the same subclass of class H10
    • H01L2225/06503Stacked arrangements of devices
    • H01L2225/06589Thermal management, e.g. cooling
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01019Potassium [K]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01022Titanium [Ti]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01025Manganese [Mn]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01032Germanium [Ge]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01044Ruthenium [Ru]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01045Rhodium [Rh]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01046Palladium [Pd]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01073Tantalum [Ta]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01074Tungsten [W]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01084Polonium [Po]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/014Solder alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/102Material of the semiconductor or solid state bodies
    • H01L2924/1025Semiconducting materials
    • H01L2924/1026Compound semiconductors
    • H01L2924/1032III-V
    • H01L2924/10329Gallium arsenide [GaAs]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/146Mixed devices
    • H01L2924/1461MEMS
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/1515Shape
    • H01L2924/15151Shape the die mounting substrate comprising an aperture, e.g. for underfilling, outgassing, window type wire connections
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/156Material
    • H01L2924/15786Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787Ceramics, e.g. crystalline carbides, nitrides or oxides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901Structure
    • H01L2924/1904Component type
    • H01L2924/19041Component type being a capacitor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
JP2012551157A 2010-01-29 2010-12-17 Icデバイスのエンハンストされた熱放散のための突出するtsv Pending JP2013518433A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US29982610P 2010-01-29 2010-01-29
US61/299,826 2010-01-29
US12/888,135 US8294261B2 (en) 2010-01-29 2010-09-22 Protruding TSV tips for enhanced heat dissipation for IC devices
US12/888,135 2010-09-22
PCT/US2010/061033 WO2011093956A2 (en) 2010-01-29 2010-12-17 Protruding tsv tips for enhanced heat dissipation for ic devices

Publications (2)

Publication Number Publication Date
JP2013518433A true JP2013518433A (ja) 2013-05-20
JP2013518433A5 JP2013518433A5 (enExample) 2014-02-06

Family

ID=44320033

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012551157A Pending JP2013518433A (ja) 2010-01-29 2010-12-17 Icデバイスのエンハンストされた熱放散のための突出するtsv

Country Status (4)

Country Link
US (1) US8294261B2 (enExample)
JP (1) JP2013518433A (enExample)
CN (1) CN102870203B (enExample)
WO (1) WO2011093956A2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011192712A (ja) * 2010-03-12 2011-09-29 Renesas Electronics Corp 半導体装置の製造方法
US10593606B2 (en) 2015-05-25 2020-03-17 Sony Corporation Wiring board, and manufacturing method

Families Citing this family (79)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7825517B2 (en) * 2007-07-16 2010-11-02 Taiwan Semiconductor Manufacturing Company, Ltd. Method for packaging semiconductor dies having through-silicon vias
GB2462589B (en) * 2008-08-04 2013-02-20 Sony Comp Entertainment Europe Apparatus and method of viewing electronic documents
US7928534B2 (en) 2008-10-09 2011-04-19 Taiwan Semiconductor Manufacturing Company, Ltd. Bond pad connection to redistribution lines having tapered profiles
US8513119B2 (en) 2008-12-10 2013-08-20 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming bump structure having tapered sidewalls for stacked dies
US8736050B2 (en) * 2009-09-03 2014-05-27 Taiwan Semiconductor Manufacturing Company, Ltd. Front side copper post joint structure for temporary bond in TSV application
US8097964B2 (en) * 2008-12-29 2012-01-17 Texas Instruments Incorporated IC having TSV arrays with reduced TSV induced stress
US20100171197A1 (en) 2009-01-05 2010-07-08 Hung-Pin Chang Isolation Structure for Stacked Dies
US8759949B2 (en) * 2009-04-30 2014-06-24 Taiwan Semiconductor Manufacturing Company, Ltd. Wafer backside structures having copper pillars
US8158489B2 (en) * 2009-06-26 2012-04-17 Taiwan Semiconductor Manufacturing Company, Ltd. Formation of TSV backside interconnects by modifying carrier wafers
US8791549B2 (en) * 2009-09-22 2014-07-29 Taiwan Semiconductor Manufacturing Company, Ltd. Wafer backside interconnect structure connected to TSVs
JP2011082450A (ja) * 2009-10-09 2011-04-21 Elpida Memory Inc 半導体装置及びこれを備える情報処理システム
US8659155B2 (en) * 2009-11-05 2014-02-25 Taiwan Semiconductor Manufacturing Company, Ltd. Mechanisms for forming copper pillar bumps
US8466059B2 (en) 2010-03-30 2013-06-18 Taiwan Semiconductor Manufacturing Company, Ltd. Multi-layer interconnect structure for stacked dies
US8174124B2 (en) * 2010-04-08 2012-05-08 Taiwan Semiconductor Manufacturing Co., Ltd. Dummy pattern in wafer backside routing
US8441124B2 (en) 2010-04-29 2013-05-14 Taiwan Semiconductor Manufacturing Company, Ltd. Cu pillar bump with non-metal sidewall protection structure
US8546254B2 (en) 2010-08-19 2013-10-01 Taiwan Semiconductor Manufacturing Company, Ltd. Mechanisms for forming copper pillar bumps using patterned anodes
US10923204B2 (en) 2010-08-20 2021-02-16 Attopsemi Technology Co., Ltd Fully testible OTP memory
US10249379B2 (en) * 2010-08-20 2019-04-02 Attopsemi Technology Co., Ltd One-time programmable devices having program selector for electrical fuses with extended area
US10229746B2 (en) 2010-08-20 2019-03-12 Attopsemi Technology Co., Ltd OTP memory with high data security
US10916317B2 (en) 2010-08-20 2021-02-09 Attopsemi Technology Co., Ltd Programmable resistance memory on thin film transistor technology
US9818478B2 (en) 2012-12-07 2017-11-14 Attopsemi Technology Co., Ltd Programmable resistive device and memory using diode as selector
US9285168B2 (en) 2010-10-05 2016-03-15 Applied Materials, Inc. Module for ozone cure and post-cure moisture treatment
US8664127B2 (en) 2010-10-15 2014-03-04 Applied Materials, Inc. Two silicon-containing precursors for gapfill enhancing dielectric liner
US8836116B2 (en) * 2010-10-21 2014-09-16 Taiwan Semiconductor Manufacturing Company, Ltd. Wafer level packaging of micro-electro-mechanical systems (MEMS) and complementary metal-oxide-semiconductor (CMOS) substrates
TWI445155B (zh) * 2011-01-06 2014-07-11 日月光半導體製造股份有限公司 堆疊式封裝結構及其製造方法
US8742564B2 (en) * 2011-01-17 2014-06-03 Bai-Yao Lou Chip package and method for forming the same
US20120180954A1 (en) 2011-01-18 2012-07-19 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US10283321B2 (en) 2011-01-18 2019-05-07 Applied Materials, Inc. Semiconductor processing system and methods using capacitively coupled plasma
US10586832B2 (en) 2011-02-14 2020-03-10 Attopsemi Technology Co., Ltd One-time programmable devices using gate-all-around structures
US10192615B2 (en) 2011-02-14 2019-01-29 Attopsemi Technology Co., Ltd One-time programmable devices having a semiconductor fin structure with a divided active region
US8716154B2 (en) 2011-03-04 2014-05-06 Applied Materials, Inc. Reduced pattern loading using silicon oxide multi-layers
US8900994B2 (en) 2011-06-09 2014-12-02 Taiwan Semiconductor Manufacturing Company, Ltd. Method for producing a protective structure
US9404178B2 (en) 2011-07-15 2016-08-02 Applied Materials, Inc. Surface treatment and deposition for reduced outgassing
US8604619B2 (en) * 2011-08-31 2013-12-10 Taiwan Semiconductor Manufacturing Company, Ltd. Through silicon via keep out zone formation along different crystal orientations
US8617989B2 (en) * 2011-09-26 2013-12-31 Applied Materials, Inc. Liner property improvement
US20130082383A1 (en) * 2011-10-03 2013-04-04 Texas Instruments Incorporated Electronic assembly having mixed interface including tsv die
JP5696647B2 (ja) * 2011-11-18 2015-04-08 富士通株式会社 半導体装置およびその製造方法
DE112011106068B4 (de) 2011-12-28 2023-11-16 Exo Imaging, Inc. MEMS auf Rückseite von Bulk-Silizium
US8664768B2 (en) 2012-05-03 2014-03-04 Taiwan Semiconductor Manufacturing Company, Ltd. Interposer having a defined through via pattern
CN103633039B (zh) * 2012-08-29 2017-02-08 中芯国际集成电路制造(上海)有限公司 半导体散热结构及其形成方法、半导体芯片
US20140061855A1 (en) * 2012-09-06 2014-03-06 United Microelectronics Corporation Capacitor structure and fabricating method thereof
US8889566B2 (en) 2012-09-11 2014-11-18 Applied Materials, Inc. Low cost flowable dielectric films
KR102021884B1 (ko) * 2012-09-25 2019-09-18 삼성전자주식회사 후면 본딩 구조체를 갖는 반도체 소자
KR101959715B1 (ko) 2012-11-06 2019-03-20 삼성전자 주식회사 반도체 장치
US9204542B1 (en) * 2013-01-07 2015-12-01 Xilinx, Inc. Multi-use package substrate
US9018108B2 (en) 2013-01-25 2015-04-28 Applied Materials, Inc. Low shrinkage dielectric films
TWI503934B (zh) * 2013-05-09 2015-10-11 日月光半導體製造股份有限公司 半導體元件及其製造方法及半導體封裝結構
RU2546710C2 (ru) * 2013-07-30 2015-04-10 Акционерное общество "Научно-исследовательский институт молекулярной электроники" (АО "НИИМЭ") Способ изготовления кристаллов с теплоотводящими элементами для вертикальной трехмерной (through-silicon vias ) сборки многокристальных сверхбольших интегральных схем
US9041193B2 (en) 2013-09-17 2015-05-26 Hamilton Sundstrand Corporation Semiconductor substrate including a cooling channel and method of forming a semiconductor substrate including a cooling channel
US9324628B2 (en) 2014-02-25 2016-04-26 International Business Machines Corporation Integrated circuit heat dissipation using nanostructures
US9412581B2 (en) 2014-07-16 2016-08-09 Applied Materials, Inc. Low-K dielectric gapfill by flowable deposition
US9184112B1 (en) 2014-12-17 2015-11-10 International Business Machines Corporation Cooling apparatus for an integrated circuit
US9472483B2 (en) 2014-12-17 2016-10-18 International Business Machines Corporation Integrated circuit cooling apparatus
KR102316267B1 (ko) 2015-04-15 2021-10-22 삼성전자주식회사 씨오피 구조를 갖는 메모리 장치, 이를 포함하는 메모리 패키지 및 그 제조 방법
US9728494B2 (en) 2015-09-24 2017-08-08 Verily Life Sciences Llc Body-mountable device with a common substrate for electronics and battery
US10319694B2 (en) 2016-08-10 2019-06-11 Qualcomm Incorporated Semiconductor assembly and method of making same
US11527454B2 (en) * 2016-11-14 2022-12-13 Taiwan Semiconductor Manufacturing Company, Ltd. Package structures and methods of forming the same
US11062786B2 (en) 2017-04-14 2021-07-13 Attopsemi Technology Co., Ltd One-time programmable memories with low power read operation and novel sensing scheme
US10535413B2 (en) 2017-04-14 2020-01-14 Attopsemi Technology Co., Ltd Low power read operation for programmable resistive memories
US10726914B2 (en) 2017-04-14 2020-07-28 Attopsemi Technology Co. Ltd Programmable resistive memories with low power read operation and novel sensing scheme
US11615859B2 (en) 2017-04-14 2023-03-28 Attopsemi Technology Co., Ltd One-time programmable memories with ultra-low power read operation and novel sensing scheme
US10256203B2 (en) * 2017-07-27 2019-04-09 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and semiconductor package
US10770160B2 (en) 2017-11-30 2020-09-08 Attopsemi Technology Co., Ltd Programmable resistive memory formed by bit slices from a standard cell library
CN108321131B (zh) * 2018-01-16 2019-09-24 厦门科一半导体科技有限公司 具有高效散热结构的集成电路
KR20190119475A (ko) * 2018-04-12 2019-10-22 에스케이하이닉스 주식회사 반도체 다이들의 스택에서 조인트 불량을 검출하는 방법
US11521923B2 (en) * 2018-05-24 2022-12-06 Intel Corporation Integrated circuit package supports
CN110010575B (zh) * 2018-12-25 2021-03-30 浙江集迈科微电子有限公司 一种栓塞互联式的tsv结构及其制作方法
CN113035801A (zh) * 2019-12-25 2021-06-25 台湾积体电路制造股份有限公司 存储器装置及其制造方法
US11355410B2 (en) 2020-04-28 2022-06-07 Taiwan Semiconductor Manufacturing Co., Ltd. Thermal dissipation in semiconductor devices
TWI741935B (zh) * 2020-04-28 2021-10-01 台灣積體電路製造股份有限公司 半導體元件與其製作方法
CN113964091A (zh) 2020-07-20 2022-01-21 长鑫存储技术有限公司 半导体装置及其制备方法、三维集成电路
WO2022126017A2 (en) * 2020-12-11 2022-06-16 Qorvo Us, Inc. 3d packaging with silicon die as thermal sink for high- power low thermal conductivity dies
TWI755281B (zh) * 2021-02-18 2022-02-11 創意電子股份有限公司 散熱結構、半導體封裝裝置及半導體封裝裝置之製造方法
US11791326B2 (en) * 2021-05-10 2023-10-17 International Business Machines Corporation Memory and logic chip stack with a translator chip
US12483429B2 (en) 2021-06-01 2025-11-25 Attopsemi Technology Co., Ltd Physically unclonable function produced using OTP memory
US20230260896A1 (en) * 2022-02-17 2023-08-17 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit package and method
US11846804B2 (en) * 2022-02-24 2023-12-19 Globalfoundries U.S. Inc. Thermally-conductive features positioned adjacent to an optical component
US12272613B2 (en) * 2022-07-11 2025-04-08 Taiwan Semiconductor Manufacturing Co., Ltd. Thermal structure for semiconductor device and method of forming the same
FR3152106B1 (fr) * 2023-08-11 2025-07-11 3D Plus Module électronique comprenant un dispositif de dissipation thermique modulable.

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11154679A (ja) * 1997-11-20 1999-06-08 Hitachi Ltd 半導体装置
JP2008103387A (ja) * 2006-10-17 2008-05-01 Murata Mfg Co Ltd 半導体装置
JP2009206496A (ja) * 2008-01-30 2009-09-10 Panasonic Corp 半導体チップ及び半導体装置
JP2009231371A (ja) * 2008-03-19 2009-10-08 Toshiba Corp 半導体チップ及び半導体装置
JP2009238957A (ja) * 2008-03-26 2009-10-15 Panasonic Electric Works Co Ltd 基板へのビアの形成方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4069498A (en) * 1976-11-03 1978-01-17 International Business Machines Corporation Studded heat exchanger for integrated circuit package
US20040152240A1 (en) * 2003-01-24 2004-08-05 Carlos Dangelo Method and apparatus for the use of self-assembled nanowires for the removal of heat from integrated circuits
US20090008792A1 (en) * 2004-11-19 2009-01-08 Industrial Technology Research Institute Three-dimensional chip-stack package and active component on a substrate
US7723759B2 (en) * 2005-10-24 2010-05-25 Intel Corporation Stacked wafer or die packaging with enhanced thermal and device performance
US7576434B2 (en) * 2007-06-26 2009-08-18 Intel Corporation Wafer-level solder bumps
US20090115026A1 (en) * 2007-11-05 2009-05-07 Texas Instruments Incorporated Semiconductor device having through-silicon vias for high current,high frequency, and heat dissipation
US8154134B2 (en) * 2008-05-12 2012-04-10 Texas Instruments Incorporated Packaged electronic devices with face-up die having TSV connection to leads and die pad
US7851346B2 (en) * 2008-07-21 2010-12-14 Taiwan Semiconductor Manufacturing Company, Ltd. Bonding metallurgy for three-dimensional interconnect
US8097964B2 (en) * 2008-12-29 2012-01-17 Texas Instruments Incorporated IC having TSV arrays with reduced TSV induced stress
US7838988B1 (en) * 2009-05-28 2010-11-23 Texas Instruments Incorporated Stud bumps as local heat sinks during transient power operations

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11154679A (ja) * 1997-11-20 1999-06-08 Hitachi Ltd 半導体装置
JP2008103387A (ja) * 2006-10-17 2008-05-01 Murata Mfg Co Ltd 半導体装置
JP2009206496A (ja) * 2008-01-30 2009-09-10 Panasonic Corp 半導体チップ及び半導体装置
JP2009231371A (ja) * 2008-03-19 2009-10-08 Toshiba Corp 半導体チップ及び半導体装置
JP2009238957A (ja) * 2008-03-26 2009-10-15 Panasonic Electric Works Co Ltd 基板へのビアの形成方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011192712A (ja) * 2010-03-12 2011-09-29 Renesas Electronics Corp 半導体装置の製造方法
US10593606B2 (en) 2015-05-25 2020-03-17 Sony Corporation Wiring board, and manufacturing method

Also Published As

Publication number Publication date
WO2011093956A3 (en) 2011-10-13
CN102870203B (zh) 2016-08-24
CN102870203A (zh) 2013-01-09
US20110186990A1 (en) 2011-08-04
US8294261B2 (en) 2012-10-23
WO2011093956A2 (en) 2011-08-04

Similar Documents

Publication Publication Date Title
CN102870203B (zh) 用于集成电路器件的增强散热的凸出tsv尖端
US20240363488A1 (en) Semiconductor packages having thermal conductive pattern
JP6053779B2 (ja) ダイ上の開ウィンドウを有するヒートスプレッダを備えた基板上のダイを含む電子的アッセンブリ
US10867878B2 (en) Dam for three-dimensional integrated circuit
US11211333B2 (en) Through silicon via optimization for three-dimensional integrated circuits
CN112185909B (zh) 具有散热结构的层叠半导体封装
US10062665B2 (en) Semiconductor packages with thermal management features for reduced thermal crosstalk
US11094608B2 (en) Heat dissipation structure including stacked chips surrounded by thermal interface material rings
US7964951B2 (en) Multi-die semiconductor package with heat spreader
US11075136B2 (en) Heat transfer structures and methods for IC packages
CN105431938B (zh) 改善散热特性的半导体装置
US8704358B2 (en) Method for forming an integrated circuit
CN110137144A (zh) 具有平坦化的钝化层的半导体器件及其制造方法
CN101292348B (zh) 具有增强的热和器件性能的可堆叠晶片或管芯封装
TW202005048A (zh) 半導體封裝系統
US9839159B1 (en) Dispense pattern for thermal interface material for a high aspect ratio thermal interface
US20250309043A1 (en) Package structure and manufacturing method thereof
CN110660759B (zh) 散热结构及制造散热结构的方法
TW202507940A (zh) 半導體裝置的製造方法及半導體裝置
GB2472166A (en) Stackable wafer or die packaging with enhanced thermal and device performance

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20120928

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20120730

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20131122

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20131122

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20131212

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20150224

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20150714