JP2013518370A - プラズマチャンバのためのプロセス条件検知デバイス - Google Patents

プラズマチャンバのためのプロセス条件検知デバイス Download PDF

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Publication number
JP2013518370A
JP2013518370A JP2012550028A JP2012550028A JP2013518370A JP 2013518370 A JP2013518370 A JP 2013518370A JP 2012550028 A JP2012550028 A JP 2012550028A JP 2012550028 A JP2012550028 A JP 2012550028A JP 2013518370 A JP2013518370 A JP 2013518370A
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substrate
plasma
electronics
layer
sensing device
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JP2013518370A5 (enExample
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アール ジェンセン
メイ サン
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KLA Corp
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KLA Corp
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Publication of JP2013518370A5 publication Critical patent/JP2013518370A5/ja
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/60—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrostatic variables, e.g. electrographic flaw testing
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
    • G01R19/0046—Arrangements for measuring currents or voltages or for indicating presence or sign thereof characterised by a specific application or detail not covered by any other subgroup of G01R19/00
    • G01R19/0061—Measuring currents of particle-beams, currents from electron multipliers, photocurrents, ion currents; Measuring in plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32954—Electron temperature measurement
    • H01L21/205—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Automation & Control Theory (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Pathology (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Immunology (AREA)
  • General Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Electrochemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2012550028A 2010-01-21 2011-01-11 プラズマチャンバのためのプロセス条件検知デバイス Pending JP2013518370A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/691,695 2010-01-21
US12/691,695 US8889021B2 (en) 2010-01-21 2010-01-21 Process condition sensing device and method for plasma chamber
PCT/US2011/020872 WO2011090850A2 (en) 2010-01-21 2011-01-11 Process condition sensing device for plasma chamber

Related Child Applications (1)

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JP2016201451A Division JP6316898B2 (ja) 2010-01-21 2016-10-13 プラズマチャンバのためのプロセス条件検知デバイス及び方法

Publications (2)

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JP2013518370A true JP2013518370A (ja) 2013-05-20
JP2013518370A5 JP2013518370A5 (enExample) 2014-02-27

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JP2012550028A Pending JP2013518370A (ja) 2010-01-21 2011-01-11 プラズマチャンバのためのプロセス条件検知デバイス
JP2016201451A Active JP6316898B2 (ja) 2010-01-21 2016-10-13 プラズマチャンバのためのプロセス条件検知デバイス及び方法

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Country Link
US (3) US8889021B2 (enExample)
EP (1) EP2526743B1 (enExample)
JP (2) JP2013518370A (enExample)
KR (1) KR101764940B1 (enExample)
CN (1) CN102771194B (enExample)
TW (1) TWI612852B (enExample)
WO (1) WO2011090850A2 (enExample)

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JP2017111073A (ja) * 2015-12-18 2017-06-22 株式会社ディスコ 静電気検出装置
KR20180100072A (ko) * 2016-01-28 2018-09-06 어플라이드 머티어리얼스, 인코포레이티드 자기-인식 생산 웨이퍼들
KR20180100071A (ko) * 2016-01-28 2018-09-06 어플라이드 머티어리얼스, 인코포레이티드 실시간 프로세스 특성화
JP2019516230A (ja) * 2016-05-10 2019-06-13 譜光儀器股▲ふん▼有限公司Ａｃｒｏｍａｓｓ Ｔｅｃｈｎｏｌｏｇｉｅｓ，Ｉｎｃ． 荷電粒子を検出するためのデバイス及び、それを組み込んだ質量分析用の装置
CN114167481A (zh) * 2020-09-10 2022-03-11 安平丹斯有限责任公司 等离子体处理的离子能量分析装置
JP2023128957A (ja) * 2022-03-04 2023-09-14 パナソニックＩｐマネジメント株式会社 プラズマ電位センサ
JP2024530014A (ja) * 2021-08-05 2024-08-14 アプライド マテリアルズ インコーポレイテッド プラズマ診断のためのマイクロ波共振器アレイ
WO2025100280A1 (ja) * 2023-11-09 2025-05-15 東京エレクトロン株式会社 プラズマ評価システム及びプラズマ評価方法

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US11735486B2 (en) 2016-01-28 2023-08-22 Applied Materials, Inc. Process monitor device having a plurality of sensors arranged in concentric circles
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JP2019516230A (ja) * 2016-05-10 2019-06-13 譜光儀器股▲ふん▼有限公司Ａｃｒｏｍａｓｓ Ｔｅｃｈｎｏｌｏｇｉｅｓ，Ｉｎｃ． 荷電粒子を検出するためのデバイス及び、それを組み込んだ質量分析用の装置
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US8889021B2 (en) 2014-11-18
WO2011090850A2 (en) 2011-07-28
KR101764940B1 (ko) 2017-08-03
CN102771194B (zh) 2015-12-02
CN102771194A (zh) 2012-11-07
US20110174777A1 (en) 2011-07-21
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EP2526743B1 (en) 2016-12-07
TWI612852B (zh) 2018-01-21
JP2017069212A (ja) 2017-04-06
TW201143541A (en) 2011-12-01
KR20120118006A (ko) 2012-10-25
US20180114681A1 (en) 2018-04-26
JP6316898B2 (ja) 2018-04-25
US10777393B2 (en) 2020-09-15
US20150020972A1 (en) 2015-01-22

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