TWI612852B - 用於電漿腔室之處理條件感測裝置及方法 - Google Patents
用於電漿腔室之處理條件感測裝置及方法 Download PDFInfo
- Publication number
- TWI612852B TWI612852B TW099140860A TW99140860A TWI612852B TW I612852 B TWI612852 B TW I612852B TW 099140860 A TW099140860 A TW 099140860A TW 99140860 A TW99140860 A TW 99140860A TW I612852 B TWI612852 B TW I612852B
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- plasma
- sensing device
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- 238000000034 method Methods 0.000 title claims description 21
- 230000008569 process Effects 0.000 title claims description 6
- 239000000758 substrate Substances 0.000 claims abstract description 111
- 238000012545 processing Methods 0.000 claims abstract description 45
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Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/60—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrostatic variables, e.g. electrographic flaw testing
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/0046—Arrangements for measuring currents or voltages or for indicating presence or sign thereof characterised by a specific application or detail not covered by any other subgroup of G01R19/00
- G01R19/0061—Measuring currents of particle-beams, currents from electron multipliers, photocurrents, ion currents; Measuring in plasmas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
- H01J37/32954—Electron temperature measurement
-
- H01L21/205—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Automation & Control Theory (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Pathology (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Immunology (AREA)
- General Health & Medical Sciences (AREA)
- Biochemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Health & Medical Sciences (AREA)
- Electrochemistry (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/691,695 | 2010-01-21 | ||
| US12/691,695 US8889021B2 (en) | 2010-01-21 | 2010-01-21 | Process condition sensing device and method for plasma chamber |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201143541A TW201143541A (en) | 2011-12-01 |
| TWI612852B true TWI612852B (zh) | 2018-01-21 |
Family
ID=44276795
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099140860A TWI612852B (zh) | 2010-01-21 | 2010-11-25 | 用於電漿腔室之處理條件感測裝置及方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (3) | US8889021B2 (enExample) |
| EP (1) | EP2526743B1 (enExample) |
| JP (2) | JP2013518370A (enExample) |
| KR (1) | KR101764940B1 (enExample) |
| CN (1) | CN102771194B (enExample) |
| TW (1) | TWI612852B (enExample) |
| WO (1) | WO2011090850A2 (enExample) |
Families Citing this family (65)
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| US9530617B2 (en) * | 2013-01-30 | 2016-12-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | In-situ charging neutralization |
| JP6275830B2 (ja) | 2013-05-30 | 2018-02-07 | ケーエルエー−テンカー コーポレイション | 熱流束を測定するための方法及びシステム |
| US9420639B2 (en) | 2013-11-11 | 2016-08-16 | Applied Materials, Inc. | Smart device fabrication via precision patterning |
| US9620400B2 (en) | 2013-12-21 | 2017-04-11 | Kla-Tencor Corporation | Position sensitive substrate device |
| US10969370B2 (en) * | 2015-06-05 | 2021-04-06 | Semilab Semiconductor Physics Laboratory Co., Ltd. | Measuring semiconductor doping using constant surface potential corona charging |
| NL2017837A (en) | 2015-11-25 | 2017-06-02 | Asml Netherlands Bv | A Measurement Substrate and a Measurement Method |
| JP6630142B2 (ja) * | 2015-12-18 | 2020-01-15 | 株式会社ディスコ | 静電気検出装置 |
| US10818561B2 (en) * | 2016-01-28 | 2020-10-27 | Applied Materials, Inc. | Process monitor device having a plurality of sensors arranged in concentric circles |
| US20170221783A1 (en) * | 2016-01-28 | 2017-08-03 | Leonard TEDESCHI | Self-aware production wafers |
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| KR102616493B1 (ko) * | 2018-06-05 | 2023-12-21 | 엘지전자 주식회사 | 플라즈마 측정 방법 및 플라즈마 공정 측정 센서 |
| US10916411B2 (en) | 2018-08-13 | 2021-02-09 | Tokyo Electron Limited | Sensor-to-sensor matching methods for chamber matching |
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| EP2526743A2 (en) | 2012-11-28 |
| WO2011090850A3 (en) | 2011-11-17 |
| US8889021B2 (en) | 2014-11-18 |
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| KR101764940B1 (ko) | 2017-08-03 |
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| EP2526743B1 (en) | 2016-12-07 |
| JP2017069212A (ja) | 2017-04-06 |
| JP2013518370A (ja) | 2013-05-20 |
| TW201143541A (en) | 2011-12-01 |
| KR20120118006A (ko) | 2012-10-25 |
| US20180114681A1 (en) | 2018-04-26 |
| JP6316898B2 (ja) | 2018-04-25 |
| US10777393B2 (en) | 2020-09-15 |
| US20150020972A1 (en) | 2015-01-22 |
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