JP2013518109A5 - - Google Patents
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- Publication number
- JP2013518109A5 JP2013518109A5 JP2012551225A JP2012551225A JP2013518109A5 JP 2013518109 A5 JP2013518109 A5 JP 2013518109A5 JP 2012551225 A JP2012551225 A JP 2012551225A JP 2012551225 A JP2012551225 A JP 2012551225A JP 2013518109 A5 JP2013518109 A5 JP 2013518109A5
- Authority
- JP
- Japan
- Prior art keywords
- tertiary
- reagent composition
- reagent
- containing compound
- triethylamine
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims description 34
- 239000000203 mixture Substances 0.000 claims description 23
- 239000003153 chemical reaction reagent Substances 0.000 claims description 22
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 claims description 21
- 150000001875 compounds Chemical class 0.000 claims description 16
- 229920000768 polyamine Polymers 0.000 claims description 15
- JGFZNNIVVJXRND-UHFFFAOYSA-N N,N-Diisopropylethylamine (DIPEA) Chemical group CCN(C(C)C)C(C)C JGFZNNIVVJXRND-UHFFFAOYSA-N 0.000 claims description 10
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 claims description 10
- 239000005052 trichlorosilane Substances 0.000 claims description 10
- 239000003446 ligand Substances 0.000 claims description 9
- 125000005270 trialkylamine group Chemical group 0.000 claims description 9
- 150000003512 tertiary amines Chemical class 0.000 claims description 8
- 229920001281 polyalkylene Polymers 0.000 claims description 6
- GCOJIFYUTTYXOF-UHFFFAOYSA-N hexasilinane Chemical compound [SiH2]1[SiH2][SiH2][SiH2][SiH2][SiH2]1 GCOJIFYUTTYXOF-UHFFFAOYSA-N 0.000 claims description 5
- LIGIARLVFBHRJF-UHFFFAOYSA-N n'-[2-(diethylamino)ethyl]-n,n,n'-triethylethane-1,2-diamine Chemical compound CCN(CC)CCN(CC)CCN(CC)CC LIGIARLVFBHRJF-UHFFFAOYSA-N 0.000 claims description 5
- 150000003839 salts Chemical class 0.000 claims description 4
- 125000000217 alkyl group Chemical group 0.000 claims description 3
- 125000003118 aryl group Chemical group 0.000 claims description 3
- 239000003638 chemical reducing agent Substances 0.000 claims description 3
- 230000005595 deprotonation Effects 0.000 claims description 3
- 238000010537 deprotonation reaction Methods 0.000 claims description 3
- 229910052987 metal hydride Inorganic materials 0.000 claims description 3
- 150000004681 metal hydrides Chemical class 0.000 claims description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims description 2
- 125000001246 bromo group Chemical group Br* 0.000 claims description 2
- 125000001309 chloro group Chemical group Cl* 0.000 claims description 2
- -1 cyclohexasilane compound Chemical class 0.000 claims description 2
- 125000005843 halogen group Chemical group 0.000 claims description 2
- 125000002346 iodo group Chemical group I* 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims description 2
- DIHKMUNUGQVFES-UHFFFAOYSA-N n,n,n',n'-tetraethylethane-1,2-diamine Chemical group CCN(CC)CCN(CC)CC DIHKMUNUGQVFES-UHFFFAOYSA-N 0.000 claims description 2
- WAGFXJQAIZNSEQ-UHFFFAOYSA-M tetraphenylphosphonium chloride Chemical group [Cl-].C1=CC=CC=C1[P+](C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 WAGFXJQAIZNSEQ-UHFFFAOYSA-M 0.000 claims description 2
- IMFACGCPASFAPR-UHFFFAOYSA-N tributylamine Chemical compound CCCCN(CCCC)CCCC IMFACGCPASFAPR-UHFFFAOYSA-N 0.000 claims description 2
- YFTHZRPMJXBUME-UHFFFAOYSA-N tripropylamine Chemical compound CCCN(CCC)CCC YFTHZRPMJXBUME-UHFFFAOYSA-N 0.000 claims description 2
- 150000001450 anions Chemical class 0.000 claims 1
- 125000001419 myristoyl group Chemical group O=C([*])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 2
- USJRLGNYCQWLPF-UHFFFAOYSA-N chlorophosphane Chemical compound ClP USJRLGNYCQWLPF-UHFFFAOYSA-N 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US29928710P | 2010-01-28 | 2010-01-28 | |
| US61/299,287 | 2010-01-28 | ||
| US31111810P | 2010-03-05 | 2010-03-05 | |
| US61/311,118 | 2010-03-05 | ||
| PCT/US2011/022360 WO2011094191A1 (en) | 2010-01-28 | 2011-01-25 | Method of producing cyclohexasilane compounds |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013518109A JP2013518109A (ja) | 2013-05-20 |
| JP2013518109A5 true JP2013518109A5 (enExample) | 2013-11-28 |
| JP5697692B2 JP5697692B2 (ja) | 2015-04-08 |
Family
ID=44319713
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012551225A Expired - Fee Related JP5697692B2 (ja) | 2010-01-28 | 2011-01-25 | シクロヘキサシラン化合物を生成する方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8975429B2 (enExample) |
| EP (1) | EP2528864B1 (enExample) |
| JP (1) | JP5697692B2 (enExample) |
| KR (1) | KR101818272B1 (enExample) |
| CN (1) | CN102762497B (enExample) |
| WO (1) | WO2011094191A1 (enExample) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101818272B1 (ko) | 2010-01-28 | 2018-02-21 | 엔디에스유 리서치 파운데이션 | 시클로헥사실란 화합물의 제조 방법 |
| DE102010040231A1 (de) * | 2010-09-03 | 2012-03-08 | Evonik Degussa Gmbh | p-Dotierte Siliciumschichten |
| JP5808646B2 (ja) * | 2011-10-31 | 2015-11-10 | 株式会社日本触媒 | 環状シラン中間体の製造方法および環状水素化シランもしくは環状有機シランの製造方法 |
| JP6014392B2 (ja) * | 2012-07-04 | 2016-10-25 | 株式会社日本触媒 | シクロヘキサシラン類の製造方法 |
| JP5902572B2 (ja) * | 2012-07-04 | 2016-04-13 | 株式会社日本触媒 | ケイ素−ハロゲン結合を有するハロゲン化環状シラン化合物またはその塩の製造方法 |
| JP6063310B2 (ja) * | 2013-03-18 | 2017-01-18 | 株式会社日本触媒 | 環状シランの製造方法 |
| TWI634073B (zh) | 2013-09-05 | 2018-09-01 | 道康寧公司 | 2,2,4,4-四矽基五矽烷及其組成物、方法及用途 |
| US11091649B2 (en) | 2013-09-05 | 2021-08-17 | Jiangsu Nata Opto-Electronic Materials Co. Ltd. | 2,2,4,4-tetrasilylpentasilane and its compositions, methods and uses |
| DE102013021306A1 (de) | 2013-12-19 | 2015-06-25 | Johann Wolfgang Goethe-Universität | Verfahren zum Herstellen von linearen, cyclischen und/oder käfigartigen perhalogenierten Oligo- und Polysilyl-Anionen |
| JP6349246B2 (ja) * | 2013-12-20 | 2018-06-27 | 株式会社日本触媒 | 環状シラン中性錯体の製造方法および環状水素化シランもしくは環状有機シランの製造方法 |
| US10858260B2 (en) | 2014-12-15 | 2020-12-08 | Evonik Operations Gmbh | Method for producing perhalogenated hexasilane anion and method for producing a cyclic silane compound |
| DE102014118658B4 (de) | 2014-12-15 | 2020-12-31 | Evonik Operations Gmbh | Verfahren zum Herstellen von perhalogeniertem Hexasilan-Anion |
| JP5942027B2 (ja) * | 2015-09-04 | 2016-06-29 | 株式会社日本触媒 | 環状シラン中間体の製造方法および環状水素化シランもしくは環状有機シランの製造方法 |
| US10544171B2 (en) | 2018-03-13 | 2020-01-28 | Nippon Shokubai Co., Ltd | Process for producing cyclic hydrogenated silane compound |
| CN113677621A (zh) | 2019-03-29 | 2021-11-19 | 科瑞泰克集团股份有限公司 | 制备环硅烷的方法 |
| US20230357028A1 (en) * | 2020-09-08 | 2023-11-09 | Nippon Shokubai Co., Ltd. | Method for producing hydrogenated polysilane compound |
Family Cites Families (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3044845A (en) | 1958-09-30 | 1962-07-17 | Union Carbide Corp | Process for producing dichlorosilane |
| FR2290448A1 (fr) | 1974-11-07 | 1976-06-04 | Rhone Poulenc Ind | Dismutation du trichlorosilane en presence de tetraalcoyluree |
| US4447633A (en) | 1983-06-14 | 1984-05-08 | North Dakota State University | Ultrasonically promoted hydrosilations |
| FR2552436B1 (fr) | 1983-09-28 | 1985-10-25 | Rhone Poulenc Spec Chim | Nouveau procede de fabrication d'hydrogeno-silanes par reaction de redistribution |
| US4683147A (en) | 1984-04-16 | 1987-07-28 | Canon Kabushiki Kaisha | Method of forming deposition film |
| US4657777A (en) | 1984-12-17 | 1987-04-14 | Canon Kabushiki Kaisha | Formation of deposited film |
| US4695331A (en) | 1985-05-06 | 1987-09-22 | Chronar Corporation | Hetero-augmentation of semiconductor materials |
| US4910153A (en) | 1986-02-18 | 1990-03-20 | Solarex Corporation | Deposition feedstock and dopant materials useful in the fabrication of hydrogenated amorphous silicon alloys for photovoltaic devices and other semiconductor devices |
| DE3711444A1 (de) | 1987-04-04 | 1988-10-13 | Huels Troisdorf | Verfahren und vorrichtung zur herstellung von dichlorsilan |
| US4841083A (en) | 1987-06-03 | 1989-06-20 | Mitsui Toatsu Chemicals, Incorporated | Ladder polysilanes |
| US4827009A (en) | 1987-09-03 | 1989-05-02 | North Dakota State University | Hydrosilation process |
| US5942637A (en) * | 1998-03-30 | 1999-08-24 | North Dakota State University Research Foundation | Compounds containing tetradecachlorocyclohexasilane dianion |
| DE69808403T2 (de) * | 1997-08-27 | 2003-07-10 | Dow Corning Corp., Midland | Tetradecachlorcyclohexasilandianon enthaltende Verbindungen |
| KR100420441B1 (ko) | 1999-03-30 | 2004-03-04 | 제이에스알 가부시끼가이샤 | 실리콘막 형성 방법 및 잉크 젯용 잉크 조성물 |
| CN100585882C (zh) | 1999-03-30 | 2010-01-27 | 精工爱普生株式会社 | 太阳能电池的制造方法 |
| TW486824B (en) | 1999-03-30 | 2002-05-11 | Seiko Epson Corp | Method of manufacturing thin-film transistor |
| KR100436319B1 (ko) | 1999-03-30 | 2004-06-18 | 제이에스알 가부시끼가이샤 | 실리콘 막의 형성방법 |
| JP4508428B2 (ja) | 1999-03-30 | 2010-07-21 | Ｊｓｒ株式会社 | コーティング組成物 |
| DE60128611T2 (de) | 2000-03-13 | 2008-01-31 | Jsr Corp. | Cyclosilan, eine flüssige Zusammensetzung und ein Verfahren zur Bildung eines Silicium-Films |
| JP3745959B2 (ja) | 2000-12-28 | 2006-02-15 | セイコーエプソン株式会社 | シリコン薄膜パターンの形成方法 |
| AU2002306436A1 (en) | 2001-02-12 | 2002-10-15 | Asm America, Inc. | Improved process for deposition of semiconductor films |
| EP1284306B1 (en) | 2001-08-14 | 2011-08-03 | JSR Corporation | Silane composition, silicon film forming method and solar cell production method |
| JP2003313299A (ja) | 2002-04-22 | 2003-11-06 | Seiko Epson Corp | 高次シラン組成物及び該組成物を用いたシリコン膜の形成方法 |
| DE60328302D1 (de) | 2002-08-23 | 2009-08-20 | Jsr Corp | Zusammensetzung zum bilden eines siliziumfilms und verfahren zum bilden eines siliziumfilms |
| JP4042685B2 (ja) | 2003-03-26 | 2008-02-06 | セイコーエプソン株式会社 | トランジスタの製造方法 |
| US7879696B2 (en) | 2003-07-08 | 2011-02-01 | Kovio, Inc. | Compositions and methods for forming a semiconducting and/or silicon-containing film, and structures formed therefrom |
| US7498015B1 (en) | 2004-02-27 | 2009-03-03 | Kovio, Inc. | Method of making silane compositions |
| US20060025506A1 (en) * | 2004-07-30 | 2006-02-02 | Weller Keith J | Silane compositions, processes for their preparation and rubber compositions containing same |
| US7531588B2 (en) * | 2004-07-30 | 2009-05-12 | Momentive Performance Materials Inc. | Silane compositions, processes for their preparation and rubber compositions containing same |
| US7314513B1 (en) | 2004-09-24 | 2008-01-01 | Kovio, Inc. | Methods of forming a doped semiconductor thin film, doped semiconductor thin film structures, doped silane compositions, and methods of making such compositions |
| US7674926B1 (en) | 2004-10-01 | 2010-03-09 | Kovio, Inc. | Dopant group-substituted semiconductor precursor compounds, compositions containing the same, and methods of making such compounds and compositions |
| US7485691B1 (en) | 2004-10-08 | 2009-02-03 | Kovio, Inc | Polysilane compositions, methods for their synthesis and films formed therefrom |
| EP1943669A4 (en) | 2005-10-05 | 2012-06-13 | Kovio Inc | LINEAR AND NETWORKED HIGHLY MOLECULAR POLYSILANES, POLYGERMANES AND COPOLYMERS THEREOF, COMPOSITIONS CONTAINING THEM AND METHOD FOR THE PREPARATION AND USE OF SUCH COMPOUNDS AND COMPOSITIONS |
| KR101818272B1 (ko) | 2010-01-28 | 2018-02-21 | 엔디에스유 리서치 파운데이션 | 시클로헥사실란 화합물의 제조 방법 |
-
2011
- 2011-01-25 KR KR1020127021848A patent/KR101818272B1/ko not_active Expired - Fee Related
- 2011-01-25 CN CN201180007314.9A patent/CN102762497B/zh not_active Expired - Fee Related
- 2011-01-25 US US13/522,289 patent/US8975429B2/en not_active Expired - Fee Related
- 2011-01-25 JP JP2012551225A patent/JP5697692B2/ja not_active Expired - Fee Related
- 2011-01-25 EP EP11737505.5A patent/EP2528864B1/en not_active Not-in-force
- 2011-01-25 WO PCT/US2011/022360 patent/WO2011094191A1/en not_active Ceased
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