JP2013515374A - 改善された下層コーティングを有するシリコン薄膜太陽電池 - Google Patents
改善された下層コーティングを有するシリコン薄膜太陽電池 Download PDFInfo
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- JP2013515374A JP2013515374A JP2012545992A JP2012545992A JP2013515374A JP 2013515374 A JP2013515374 A JP 2013515374A JP 2012545992 A JP2012545992 A JP 2012545992A JP 2012545992 A JP2012545992 A JP 2012545992A JP 2013515374 A JP2013515374 A JP 2013515374A
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- 238000000576 coating method Methods 0.000 title claims description 49
- 239000011248 coating agent Substances 0.000 title claims description 48
- 229910052710 silicon Inorganic materials 0.000 title claims description 19
- 239000010409 thin film Substances 0.000 title claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title description 9
- 239000010703 silicon Substances 0.000 title description 9
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 93
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 90
- 229910001887 tin oxide Inorganic materials 0.000 claims description 49
- 239000000377 silicon dioxide Substances 0.000 claims description 45
- 239000000758 substrate Substances 0.000 claims description 45
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 44
- 239000000203 mixture Substances 0.000 claims description 41
- 239000000463 material Substances 0.000 claims description 29
- 239000011521 glass Substances 0.000 claims description 24
- 229910001392 phosphorus oxide Inorganic materials 0.000 claims description 22
- VSAISIQCTGDGPU-UHFFFAOYSA-N tetraphosphorus hexaoxide Chemical compound O1P(O2)OP3OP1OP2O3 VSAISIQCTGDGPU-UHFFFAOYSA-N 0.000 claims description 21
- 229910052718 tin Inorganic materials 0.000 claims description 19
- 229910052719 titanium Inorganic materials 0.000 claims description 16
- 229910052731 fluorine Inorganic materials 0.000 claims description 15
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims description 14
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 13
- 229910052782 aluminium Inorganic materials 0.000 claims description 13
- 239000011737 fluorine Substances 0.000 claims description 13
- 229910052698 phosphorus Inorganic materials 0.000 claims description 13
- 229910052726 zirconium Inorganic materials 0.000 claims description 12
- 229910052725 zinc Inorganic materials 0.000 claims description 8
- 239000002019 doping agent Substances 0.000 claims description 7
- 229910052787 antimony Inorganic materials 0.000 claims description 5
- 229910052684 Cerium Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 229910052797 bismuth Inorganic materials 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 229910052735 hafnium Inorganic materials 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 4
- 229910052748 manganese Inorganic materials 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 7
- 239000007787 solid Substances 0.000 abstract 2
- 238000005034 decoration Methods 0.000 abstract 1
- 238000004049 embossing Methods 0.000 abstract 1
- 230000003595 spectral effect Effects 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 109
- 239000002243 precursor Substances 0.000 description 22
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 20
- 239000011135 tin Substances 0.000 description 18
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 15
- 238000005229 chemical vapour deposition Methods 0.000 description 13
- 239000005329 float glass Substances 0.000 description 13
- 239000010936 titanium Substances 0.000 description 12
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 11
- 239000011247 coating layer Substances 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- -1 polyethylene terephthalate Polymers 0.000 description 9
- 238000000151 deposition Methods 0.000 description 8
- 239000010408 film Substances 0.000 description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 6
- 239000011701 zinc Substances 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- HJYACKPVJCHPFH-UHFFFAOYSA-N dimethyl(propan-2-yloxy)alumane Chemical compound C[Al+]C.CC(C)[O-] HJYACKPVJCHPFH-UHFFFAOYSA-N 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- 229920000642 polymer Polymers 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 4
- WOZZOSDBXABUFO-UHFFFAOYSA-N tri(butan-2-yloxy)alumane Chemical compound [Al+3].CCC(C)[O-].CCC(C)[O-].CCC(C)[O-] WOZZOSDBXABUFO-UHFFFAOYSA-N 0.000 description 4
- 238000000137 annealing Methods 0.000 description 3
- 238000000149 argon plasma sintering Methods 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 230000005670 electromagnetic radiation Effects 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical group CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000008199 coating composition Substances 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- 229920000058 polyacrylate Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 238000005118 spray pyrolysis Methods 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- JMXKSZRRTHPKDL-UHFFFAOYSA-N titanium ethoxide Chemical compound [Ti+4].CC[O-].CC[O-].CC[O-].CC[O-] JMXKSZRRTHPKDL-UHFFFAOYSA-N 0.000 description 2
- DQWPFSLDHJDLRL-UHFFFAOYSA-N triethyl phosphate Chemical compound CCOP(=O)(OCC)OCC DQWPFSLDHJDLRL-UHFFFAOYSA-N 0.000 description 2
- BDZBKCUKTQZUTL-UHFFFAOYSA-N triethyl phosphite Chemical compound CCOP(OCC)OCC BDZBKCUKTQZUTL-UHFFFAOYSA-N 0.000 description 2
- BNEMLSQAJOPTGK-UHFFFAOYSA-N zinc;dioxido(oxo)tin Chemical compound [Zn+2].[O-][Sn]([O-])=O BNEMLSQAJOPTGK-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- 238000006124 Pilkington process Methods 0.000 description 1
- FKNQFGJONOIPTF-UHFFFAOYSA-N Sodium cation Chemical compound [Na+] FKNQFGJONOIPTF-UHFFFAOYSA-N 0.000 description 1
- OUUQCZGPVNCOIJ-UHFFFAOYSA-M Superoxide Chemical class [O-][O] OUUQCZGPVNCOIJ-UHFFFAOYSA-M 0.000 description 1
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical class OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- SMZOGRDCAXLAAR-UHFFFAOYSA-N aluminium isopropoxide Chemical compound [Al+3].CC(C)[O-].CC(C)[O-].CC(C)[O-] SMZOGRDCAXLAAR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- YHWCPXVTRSHPNY-UHFFFAOYSA-N butan-1-olate;titanium(4+) Chemical compound [Ti+4].CCCC[O-].CCCC[O-].CCCC[O-].CCCC[O-] YHWCPXVTRSHPNY-UHFFFAOYSA-N 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229920001519 homopolymer Polymers 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002734 metacrylic acid derivatives Chemical class 0.000 description 1
- ZEIWWVGGEOHESL-UHFFFAOYSA-N methanol;titanium Chemical compound [Ti].OC.OC.OC.OC ZEIWWVGGEOHESL-UHFFFAOYSA-N 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000006060 molten glass Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- UJMWVICAENGCRF-UHFFFAOYSA-N oxygen difluoride Chemical compound FOF UJMWVICAENGCRF-UHFFFAOYSA-N 0.000 description 1
- SOQBVABWOPYFQZ-UHFFFAOYSA-N oxygen(2-);titanium(4+) Chemical class [O-2].[O-2].[Ti+4] SOQBVABWOPYFQZ-UHFFFAOYSA-N 0.000 description 1
- INFDPOAKFNIJBF-UHFFFAOYSA-N paraquat Chemical compound C1=C[N+](C)=CC=C1C1=CC=[N+](C)C=C1 INFDPOAKFNIJBF-UHFFFAOYSA-N 0.000 description 1
- LFGREXWGYUGZLY-UHFFFAOYSA-N phosphoryl Chemical class [P]=O LFGREXWGYUGZLY-UHFFFAOYSA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920001483 poly(ethyl methacrylate) polymer Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920001707 polybutylene terephthalate Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- HKJYVRJHDIPMQB-UHFFFAOYSA-N propan-1-olate;titanium(4+) Chemical compound CCCO[Ti](OCCC)(OCCC)OCCC HKJYVRJHDIPMQB-UHFFFAOYSA-N 0.000 description 1
- OGHBATFHNDZKSO-UHFFFAOYSA-N propan-2-olate Chemical compound CC(C)[O-] OGHBATFHNDZKSO-UHFFFAOYSA-N 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- HUAUNKAZQWMVFY-UHFFFAOYSA-M sodium;oxocalcium;hydroxide Chemical compound [OH-].[Na+].[Ca]=O HUAUNKAZQWMVFY-UHFFFAOYSA-M 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 229920001897 terpolymer Polymers 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
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- H01L31/02—Details
- H01L31/0224—Electrodes
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
- C03C17/3417—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials all coatings being oxide coatings
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- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
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Abstract
Description
コーティングされた物品は、3.2mmの厚さの透明ガラス基板を備える。15nmの厚さの酸化スズの層が、基板表面の上に形成される。シリカ、酸化スズ、及び酸化リンの誘電体層が酸化スズの層の上に形成され、誘電体層は、1モル%から40モル%の酸化スズを含む。誘電体層の厚さは、20nmから40nmである。フッ素をドープした酸化スズの層が誘電体層の上に形成され、フッ素をドープした酸化スズの層の厚さは少なくとも470nmである。コーティング層は、CVDにより形成される。
コーティングされた物品は、3.2mmの厚さの透明ガラス基板を備える。10〜15nmの厚さのチタニアの層が、基板表面の上に形成される。シリカ、チタニア、及び酸化リンの誘電体層がチタニアの層の上に形成され、誘電体層は、25モル%未満のチタニアを含む。誘電体層の厚さは、20nmから40nmのである。フッ素をドープした酸化スズの層が誘電体層の上に形成され、フッ素をドープした酸化スズの層の厚さは少なくとも470nmである。コーティング層は、CVDにより形成される。
コーティングされた物品は、3.2mmの厚さの透明ガラス基板を備える。15nmの厚さの酸化スズの層が、基板表面の上に形成される。シリカ、酸化スズ、及び酸化リンの誘電体層が酸化スズの層の上に形成され、誘電体層は、15モル%から20モル%の酸化スズを含む。誘電体層の厚さは、25nmである。フッ素をドープした酸化スズの層が誘電体層の上に形成され、フッ素をドープした酸化スズの層は350nmの厚さである。コーティング層は、CVDにより形成される。
Claims (14)
- 基板と、
前記基板の少なくとも一部の上に形成されるアンダーコーティングであって、
酸化スズ又はチタニアを含む第1の層、及び
Sn、P、Si、Ti、Al及びZrのうちの少なくとも2つの酸化物を含む酸化物の、組成上均一な混合物又は組成上不均一な混合物を含む第2の層
を備えるアンダーコーティングと、
前記アンダーコーティングの少なくとも一部の上に形成される導電コーティングであって、Zn、Fe、Mn、Al、Ce、Sn、Sb、Hf、Zr、Ni、Zn、Bi、Ti、Co、Cr、Si若しくはInのうちの1つ若しくは複数の酸化物、又はこれらの材料の2つ以上の合金を含む導電コーティングと
を備える、シリコン薄膜太陽電池。 - 前記基板がガラスである、請求項1に記載の太陽電池。
- 前記第1の層の厚さが10nmから25nmの範囲である、請求項1に記載の太陽電池。
- 前記第2の層がTi、Si及びPの酸化物を含む、請求項1に記載の太陽電池。
- 前記第2の層がSn、Si及びPの酸化物を含む、請求項1に記載の太陽電池。
- 前記第2の層が、30〜80容量%のシリカ、1〜15容量%の酸化リン、及び5〜69容量%のチタニアを含み、厚さが10nmから120nmの範囲である、請求項1に記載の太陽電池。
- 前記第2の層の厚さが20nmから40nmの範囲である、請求項1に記載の太陽電池。
- 前記導電コーティングが、F、In、Al、P及びSbから選択される少なくとも1つのドーパントを含む、請求項1に記載の太陽電池。
- 前記導電コーティングがフッ素をドープした酸化スズを含む、請求項8に記載の太陽電池。
- 前記基板がガラスであり、前記第1の層が厚さ10nmから25nmの範囲の酸化スズを含み、前記第2の層がシリカ、酸化スズ、及び酸化リンの混合物を含み、該混合物の厚さは20nmから40nmの範囲であり、該混合物中の酸化スズは1モル%から40モル%の範囲であり、前記導電コーティングがフッ素をドープした厚さ470nm以上の酸化スズを含む、請求項1に記載の太陽電池。
- 前記基板がガラスであり、前記第1の層が10nmから15nmの範囲の厚さのチタニアを含み、前記第2の層の厚さが20nmから40nmの範囲であり、該前記第2の層は25モル%未満のチタニアを有する、シリカ、チタニア、及び酸化リンの混合物を含み、前記導電コーティングがフッ素をドープした厚さ470nm以上の酸化スズを含む、請求項1に記載の太陽電池。
- 基板と、
Sn、P、Si、及びTiのうちの少なくとも2つの酸化物を含む酸化物の混合物を含み、傾斜層である誘電体層と、
前記誘電体コーティングを覆い、フッ素をドープした酸化スズを含む導電コーティングと
を備える、コーティングされた物品。 - 前記誘電体層が、シリカ、チタニア、及び酸化リンを含む、請求項12に記載の物品。
- 前記誘電体層が、シリカ、酸化スズ、及び酸化リンを含む、請求項12に記載の物品。
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US12/643,448 | 2009-12-21 | ||
PCT/US2010/059081 WO2011084297A2 (en) | 2009-12-21 | 2010-12-06 | Silicon thin film solar cell having improved underlayer coating |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016127128A (ja) * | 2014-12-26 | 2016-07-11 | 株式会社マテリアル・コンセプト | 太陽電池モジュールおよびその製造方法 |
JP2020532486A (ja) * | 2017-08-31 | 2020-11-12 | ピルキントン グループ リミテッド | コーティングされたガラス物品、その作製方法、およびそれにより作製された光電池 |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110146768A1 (en) * | 2009-12-21 | 2011-06-23 | Ppg Industries Ohio, Inc. | Silicon thin film solar cell having improved underlayer coating |
BE1019690A3 (fr) * | 2010-06-24 | 2012-10-02 | Agc Glass Europe | Vitrage isolant. |
US8829930B2 (en) * | 2011-02-01 | 2014-09-09 | Ut-Battelle, Llc | Rapid screening buffer layers in photovoltaics |
BE1019881A3 (fr) * | 2011-03-16 | 2013-02-05 | Agc Glass Europe | Vitrage isolant. |
JP2014095098A (ja) * | 2012-11-07 | 2014-05-22 | Sumitomo Metal Mining Co Ltd | 透明導電膜積層体及びその製造方法、並びに薄膜太陽電池及びその製造方法 |
JP6267316B2 (ja) * | 2013-03-12 | 2018-01-24 | ビトロ、エセ.ア.ベ. デ セ.ウベ. | 太陽電池用の高ヘイズ下層 |
US10672921B2 (en) * | 2015-03-12 | 2020-06-02 | Vitro Flat Glass Llc | Article with transparent conductive layer and method of making the same |
EP3296277B1 (en) * | 2015-05-11 | 2021-01-13 | AGC Inc. | Heat insulating glass unit for vehicle and manufacturing method thereof |
EP3296275B1 (en) * | 2015-05-11 | 2021-03-17 | AGC Inc. | Insulated glass unit for vehicles |
CN106098816A (zh) * | 2016-07-13 | 2016-11-09 | 盐城普兰特新能源有限公司 | 一种碲化镉薄膜太阳能电池及其制备方法 |
CN106477914B (zh) * | 2016-10-09 | 2018-10-30 | 天津市职业大学 | 一种复合透明导电薄膜玻璃的制备方法 |
CN106158997B (zh) * | 2016-10-09 | 2017-09-05 | 天津市职业大学 | 一种掺杂氧化锡透明导电薄膜的制备方法 |
CN106655995B (zh) * | 2017-02-09 | 2019-03-12 | 河南弘大新材科技有限公司 | 自洁式光电转换太阳能瓦 |
JP7376470B2 (ja) | 2017-08-31 | 2023-11-08 | ピルキントン グループ リミテッド | 酸化ケイ素コーティングを形成するための化学気相堆積プロセス |
TWM587826U (zh) | 2019-08-15 | 2019-12-11 | 凌巨科技股份有限公司 | 薄膜太陽能電池 |
CN110774792B (zh) * | 2019-09-29 | 2021-10-01 | 浙江天浩数码科技有限公司 | 一种热转印智能打码混合基碳带及其制备方法 |
WO2024073002A1 (en) * | 2022-09-28 | 2024-04-04 | nexTC Corporation | Applying a transparent conductive film to fluorine-doped tin oxide |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0372586A (ja) * | 1989-05-16 | 1991-03-27 | Rohm & Haas Co | 架橋剤と耐衝撃性改良剤を含むアクリル接着剤組成物 |
JP2000143294A (ja) * | 1993-02-16 | 2000-05-23 | Ppg Ind Ohio Inc | 被覆されたガラス基体 |
JP2001036107A (ja) * | 1999-05-18 | 2001-02-09 | Nippon Sheet Glass Co Ltd | 光電変換装置用基板およびこれを用いた光電変換装置 |
Family Cites Families (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3378396A (en) * | 1967-03-27 | 1968-04-16 | Zaromb Solomon | Conductive oxide-coated articles |
US4206252A (en) * | 1977-04-04 | 1980-06-03 | Gordon Roy G | Deposition method for coating glass and the like |
US4440822A (en) * | 1977-04-04 | 1984-04-03 | Gordon Roy G | Non-iridescent glass structures |
US4471155A (en) * | 1983-04-15 | 1984-09-11 | Energy Conversion Devices, Inc. | Narrow band gap photovoltaic devices with enhanced open circuit voltage |
US4971843A (en) * | 1983-07-29 | 1990-11-20 | Ppg Industries, Inc. | Non-iridescent infrared-reflecting coated glass |
US4746347A (en) * | 1987-01-02 | 1988-05-24 | Ppg Industries, Inc. | Patterned float glass method |
US4792536A (en) * | 1987-06-29 | 1988-12-20 | Ppg Industries, Inc. | Transparent infrared absorbing glass and method of making |
US4853257A (en) * | 1987-09-30 | 1989-08-01 | Ppg Industries, Inc. | Chemical vapor deposition of tin oxide on float glass in the tin bath |
US5030593A (en) * | 1990-06-29 | 1991-07-09 | Ppg Industries, Inc. | Lightly tinted glass compatible with wood tones |
US5030594A (en) * | 1990-06-29 | 1991-07-09 | Ppg Industries, Inc. | Highly transparent, edge colored glass |
US5240886A (en) * | 1990-07-30 | 1993-08-31 | Ppg Industries, Inc. | Ultraviolet absorbing, green tinted glass |
US5393593A (en) * | 1990-10-25 | 1995-02-28 | Ppg Industries, Inc. | Dark gray, infrared absorbing glass composition and coated glass for privacy glazing |
DK0573639T3 (da) * | 1991-12-26 | 2000-02-07 | Atochem North America Elf | Coatingsammensætning til glas |
US5599387A (en) * | 1993-02-16 | 1997-02-04 | Ppg Industries, Inc. | Compounds and compositions for coating glass with silicon oxide |
JPH07235684A (ja) * | 1994-02-23 | 1995-09-05 | Hitachi Cable Ltd | 太陽電池 |
US5536718A (en) | 1995-01-17 | 1996-07-16 | American Cyanamid Company | Tricyclic benzazepine vasopressin antagonists |
US5714199A (en) * | 1995-06-07 | 1998-02-03 | Libbey-Owens-Ford Co. | Method for applying a polymer powder onto a pre-heated glass substrate and the resulting article |
FR2736632B1 (fr) * | 1995-07-12 | 1997-10-24 | Saint Gobain Vitrage | Vitrage muni d'une couche conductrice et/ou bas-emissive |
GB9710547D0 (en) * | 1997-05-23 | 1997-07-16 | Pilkington Plc | Coating method |
JP2001320067A (ja) * | 2000-03-02 | 2001-11-16 | Nippon Sheet Glass Co Ltd | 光電変換装置 |
JP4229606B2 (ja) * | 2000-11-21 | 2009-02-25 | 日本板硝子株式会社 | 光電変換装置用基体およびそれを備えた光電変換装置 |
WO2004102677A1 (ja) * | 2003-05-13 | 2004-11-25 | Asahi Glass Company, Limited | 太陽電池用透明導電性基板およびその製造方法 |
US7293430B2 (en) * | 2003-09-30 | 2007-11-13 | Hoya Corporation | Press molding apparatus and press molding method of optical element |
JPWO2007058118A1 (ja) * | 2005-11-17 | 2009-04-30 | 旭硝子株式会社 | 太陽電池用透明導電性基板およびその製造方法 |
US20080047603A1 (en) * | 2006-08-24 | 2008-02-28 | Guardian Industries Corp. | Front contact with intermediate layer(s) adjacent thereto for use in photovoltaic device and method of making same |
US20080049431A1 (en) * | 2006-08-24 | 2008-02-28 | Heather Debra Boek | Light emitting device including anti-reflection layer(s) |
US7483212B2 (en) * | 2006-10-11 | 2009-01-27 | Rensselaer Polytechnic Institute | Optical thin film, semiconductor light emitting device having the same and methods of fabricating the same |
US8203073B2 (en) * | 2006-11-02 | 2012-06-19 | Guardian Industries Corp. | Front electrode for use in photovoltaic device and method of making same |
US8795773B2 (en) * | 2008-03-13 | 2014-08-05 | Guardian Industries Corp. | Nano-particle loaded metal oxide matrix coatings deposited via combustion deposition |
KR101213470B1 (ko) * | 2008-09-08 | 2012-12-20 | 한국전자통신연구원 | 태양전지의 반사방지막, 태양전지, 태양전지의 제조방법 |
US20110146768A1 (en) * | 2009-12-21 | 2011-06-23 | Ppg Industries Ohio, Inc. | Silicon thin film solar cell having improved underlayer coating |
-
2009
- 2009-12-21 US US12/643,448 patent/US20110146768A1/en not_active Abandoned
-
2010
- 2010-12-06 RU RU2012131143/28A patent/RU2531752C2/ru active
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- 2010-12-06 KR KR1020127019145A patent/KR101457283B1/ko active IP Right Grant
- 2010-12-06 BR BR112012014163A patent/BR112012014163A2/pt not_active IP Right Cessation
- 2010-12-06 EP EP10790812.1A patent/EP2517261B1/en active Active
- 2010-12-06 WO PCT/US2010/059081 patent/WO2011084297A2/en active Application Filing
- 2010-12-06 CN CN201080055989.6A patent/CN102804390B/zh active Active
- 2010-12-06 MX MX2012006820A patent/MX2012006820A/es not_active Application Discontinuation
- 2010-12-21 TW TW099145063A patent/TWI493733B/zh active
-
2012
- 2012-06-12 IN IN5185DEN2012 patent/IN2012DN05185A/en unknown
- 2012-11-16 US US13/678,631 patent/US20130333752A1/en not_active Abandoned
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0372586A (ja) * | 1989-05-16 | 1991-03-27 | Rohm & Haas Co | 架橋剤と耐衝撃性改良剤を含むアクリル接着剤組成物 |
JP2000143294A (ja) * | 1993-02-16 | 2000-05-23 | Ppg Ind Ohio Inc | 被覆されたガラス基体 |
JP2001036107A (ja) * | 1999-05-18 | 2001-02-09 | Nippon Sheet Glass Co Ltd | 光電変換装置用基板およびこれを用いた光電変換装置 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016127128A (ja) * | 2014-12-26 | 2016-07-11 | 株式会社マテリアル・コンセプト | 太陽電池モジュールおよびその製造方法 |
JP2020532486A (ja) * | 2017-08-31 | 2020-11-12 | ピルキントン グループ リミテッド | コーティングされたガラス物品、その作製方法、およびそれにより作製された光電池 |
JP7372234B2 (ja) | 2017-08-31 | 2023-10-31 | ピルキントン グループ リミテッド | コーティングされたガラス物品、その作製方法、およびそれにより作製された光電池 |
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TWI493733B (zh) | 2015-07-21 |
US20130333752A1 (en) | 2013-12-19 |
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KR20120096098A (ko) | 2012-08-29 |
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CN102804390B (zh) | 2016-08-31 |
WO2011084297A3 (en) | 2012-06-07 |
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