BR112012014163A2 - célula solar com película fino de silício tendo revestimento de camada inferior aperfeiçoado - Google Patents

célula solar com película fino de silício tendo revestimento de camada inferior aperfeiçoado

Info

Publication number
BR112012014163A2
BR112012014163A2 BR112012014163A BR112012014163A BR112012014163A2 BR 112012014163 A2 BR112012014163 A2 BR 112012014163A2 BR 112012014163 A BR112012014163 A BR 112012014163A BR 112012014163 A BR112012014163 A BR 112012014163A BR 112012014163 A2 BR112012014163 A2 BR 112012014163A2
Authority
BR
Brazil
Prior art keywords
solar cell
film solar
silicon thin
lower layer
thin film
Prior art date
Application number
BR112012014163A
Other languages
English (en)
Inventor
Songwei Lu
Original Assignee
Ppg Ind Ohio Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ppg Ind Ohio Inc filed Critical Ppg Ind Ohio Inc
Publication of BR112012014163A2 publication Critical patent/BR112012014163A2/pt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
    • C03C17/3417—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials all coatings being oxide coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/90—Other aspects of coatings
    • C03C2217/94—Transparent conductive oxide layers [TCO] being part of a multilayer coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Laminated Bodies (AREA)
  • Surface Treatment Of Glass (AREA)
  • Photovoltaic Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Non-Insulated Conductors (AREA)
  • Surface Treatment Of Optical Elements (AREA)

Abstract

célula solar com película fina de silício tendo revestimento de camada inferior aperfeiçoando. uma célula solar com película fina de silício inclui um substrato e um revestimento inferior formado sobre pelo menos uma porção do substrato. o revestimento inferior inclui primeira camada tendo óxido de estanho ou titânia e uma segunda camada tendo uma mistura de óxidos de pelo menos dois entre sn, p, si, ti, al e zr. um revestimento condutivo é formado sobre pelo menos uma porção do primeiro revestimento, em que o revestimento condutivo inclui óxidos de um ou mais de zn, fe, mn, al, ce, sn, hf, zr, ni, zn, bi, ti, co, cr, si ou in ou uma liga de dois ou mais desses materiais.
BR112012014163A 2009-12-21 2010-12-06 célula solar com película fino de silício tendo revestimento de camada inferior aperfeiçoado BR112012014163A2 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/643,448 US20110146768A1 (en) 2009-12-21 2009-12-21 Silicon thin film solar cell having improved underlayer coating
PCT/US2010/059081 WO2011084297A2 (en) 2009-12-21 2010-12-06 Silicon thin film solar cell having improved underlayer coating

Publications (1)

Publication Number Publication Date
BR112012014163A2 true BR112012014163A2 (pt) 2016-05-17

Family

ID=44149392

Family Applications (1)

Application Number Title Priority Date Filing Date
BR112012014163A BR112012014163A2 (pt) 2009-12-21 2010-12-06 célula solar com película fino de silício tendo revestimento de camada inferior aperfeiçoado

Country Status (11)

Country Link
US (2) US20110146768A1 (pt)
EP (1) EP2517261B1 (pt)
JP (1) JP5524354B2 (pt)
KR (1) KR101457283B1 (pt)
CN (1) CN102804390B (pt)
BR (1) BR112012014163A2 (pt)
IN (1) IN2012DN05185A (pt)
MX (1) MX2012006820A (pt)
RU (1) RU2531752C2 (pt)
TW (1) TWI493733B (pt)
WO (1) WO2011084297A2 (pt)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110146768A1 (en) * 2009-12-21 2011-06-23 Ppg Industries Ohio, Inc. Silicon thin film solar cell having improved underlayer coating
BE1019690A3 (fr) * 2010-06-24 2012-10-02 Agc Glass Europe Vitrage isolant.
US8829930B2 (en) * 2011-02-01 2014-09-09 Ut-Battelle, Llc Rapid screening buffer layers in photovoltaics
BE1019881A3 (fr) * 2011-03-16 2013-02-05 Agc Glass Europe Vitrage isolant.
JP2014095098A (ja) * 2012-11-07 2014-05-22 Sumitomo Metal Mining Co Ltd 透明導電膜積層体及びその製造方法、並びに薄膜太陽電池及びその製造方法
JP6267316B2 (ja) * 2013-03-12 2018-01-24 ビトロ、エセ．ア．ベ． デ セ．ウベ． 太陽電池用の高ヘイズ下層
JP6548896B2 (ja) * 2014-12-26 2019-07-24 株式会社マテリアル・コンセプト 太陽電池モジュールおよびその製造方法
US10672921B2 (en) * 2015-03-12 2020-06-02 Vitro Flat Glass Llc Article with transparent conductive layer and method of making the same
EP3296277B1 (en) * 2015-05-11 2021-01-13 AGC Inc. Heat insulating glass unit for vehicle and manufacturing method thereof
EP3296275B1 (en) * 2015-05-11 2021-03-17 AGC Inc. Insulated glass unit for vehicles
CN106098816A (zh) * 2016-07-13 2016-11-09 盐城普兰特新能源有限公司 一种碲化镉薄膜太阳能电池及其制备方法
CN106477914B (zh) * 2016-10-09 2018-10-30 天津市职业大学 一种复合透明导电薄膜玻璃的制备方法
CN106158997B (zh) * 2016-10-09 2017-09-05 天津市职业大学 一种掺杂氧化锡透明导电薄膜的制备方法
CN106655995B (zh) * 2017-02-09 2019-03-12 河南弘大新材科技有限公司 自洁式光电转换太阳能瓦
JP7372234B2 (ja) * 2017-08-31 2023-10-31 ピルキントン グループ リミテッド コーティングされたガラス物品、その作製方法、およびそれにより作製された光電池
JP7376470B2 (ja) 2017-08-31 2023-11-08 ピルキントン グループ リミテッド 酸化ケイ素コーティングを形成するための化学気相堆積プロセス
TWM587826U (zh) 2019-08-15 2019-12-11 凌巨科技股份有限公司 薄膜太陽能電池
CN110774792B (zh) * 2019-09-29 2021-10-01 浙江天浩数码科技有限公司 一种热转印智能打码混合基碳带及其制备方法
WO2024073002A1 (en) * 2022-09-28 2024-04-04 nexTC Corporation Applying a transparent conductive film to fluorine-doped tin oxide

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3378396A (en) * 1967-03-27 1968-04-16 Zaromb Solomon Conductive oxide-coated articles
US4206252A (en) * 1977-04-04 1980-06-03 Gordon Roy G Deposition method for coating glass and the like
US4440822A (en) * 1977-04-04 1984-04-03 Gordon Roy G Non-iridescent glass structures
US4471155A (en) * 1983-04-15 1984-09-11 Energy Conversion Devices, Inc. Narrow band gap photovoltaic devices with enhanced open circuit voltage
US4971843A (en) * 1983-07-29 1990-11-20 Ppg Industries, Inc. Non-iridescent infrared-reflecting coated glass
US4746347A (en) * 1987-01-02 1988-05-24 Ppg Industries, Inc. Patterned float glass method
US4792536A (en) * 1987-06-29 1988-12-20 Ppg Industries, Inc. Transparent infrared absorbing glass and method of making
US4853257A (en) * 1987-09-30 1989-08-01 Ppg Industries, Inc. Chemical vapor deposition of tin oxide on float glass in the tin bath
CA2015905A1 (en) * 1989-05-16 1990-11-16 Louis Christopher Graziano Acrylic adhesive compositions containing crosslinking agents and impact modifiers
US5030593A (en) * 1990-06-29 1991-07-09 Ppg Industries, Inc. Lightly tinted glass compatible with wood tones
US5030594A (en) * 1990-06-29 1991-07-09 Ppg Industries, Inc. Highly transparent, edge colored glass
US5240886A (en) * 1990-07-30 1993-08-31 Ppg Industries, Inc. Ultraviolet absorbing, green tinted glass
US5393593A (en) * 1990-10-25 1995-02-28 Ppg Industries, Inc. Dark gray, infrared absorbing glass composition and coated glass for privacy glazing
DK0573639T3 (da) * 1991-12-26 2000-02-07 Atochem North America Elf Coatingsammensætning til glas
US5599387A (en) * 1993-02-16 1997-02-04 Ppg Industries, Inc. Compounds and compositions for coating glass with silicon oxide
US5356718A (en) * 1993-02-16 1994-10-18 Ppg Industries, Inc. Coating apparatus, method of coating glass, compounds and compositions for coating glasss and coated glass substrates
JPH07235684A (ja) * 1994-02-23 1995-09-05 Hitachi Cable Ltd 太陽電池
US5536718A (en) 1995-01-17 1996-07-16 American Cyanamid Company Tricyclic benzazepine vasopressin antagonists
US5714199A (en) * 1995-06-07 1998-02-03 Libbey-Owens-Ford Co. Method for applying a polymer powder onto a pre-heated glass substrate and the resulting article
FR2736632B1 (fr) * 1995-07-12 1997-10-24 Saint Gobain Vitrage Vitrage muni d'une couche conductrice et/ou bas-emissive
GB9710547D0 (en) * 1997-05-23 1997-07-16 Pilkington Plc Coating method
JP2001036107A (ja) * 1999-05-18 2001-02-09 Nippon Sheet Glass Co Ltd 光電変換装置用基板およびこれを用いた光電変換装置
JP2001320067A (ja) * 2000-03-02 2001-11-16 Nippon Sheet Glass Co Ltd 光電変換装置
JP4229606B2 (ja) * 2000-11-21 2009-02-25 日本板硝子株式会社 光電変換装置用基体およびそれを備えた光電変換装置
WO2004102677A1 (ja) * 2003-05-13 2004-11-25 Asahi Glass Company, Limited 太陽電池用透明導電性基板およびその製造方法
US7293430B2 (en) * 2003-09-30 2007-11-13 Hoya Corporation Press molding apparatus and press molding method of optical element
JPWO2007058118A1 (ja) * 2005-11-17 2009-04-30 旭硝子株式会社 太陽電池用透明導電性基板およびその製造方法
US20080047603A1 (en) * 2006-08-24 2008-02-28 Guardian Industries Corp. Front contact with intermediate layer(s) adjacent thereto for use in photovoltaic device and method of making same
US20080049431A1 (en) * 2006-08-24 2008-02-28 Heather Debra Boek Light emitting device including anti-reflection layer(s)
US7483212B2 (en) * 2006-10-11 2009-01-27 Rensselaer Polytechnic Institute Optical thin film, semiconductor light emitting device having the same and methods of fabricating the same
US8203073B2 (en) * 2006-11-02 2012-06-19 Guardian Industries Corp. Front electrode for use in photovoltaic device and method of making same
US8795773B2 (en) * 2008-03-13 2014-08-05 Guardian Industries Corp. Nano-particle loaded metal oxide matrix coatings deposited via combustion deposition
KR101213470B1 (ko) * 2008-09-08 2012-12-20 한국전자통신연구원 태양전지의 반사방지막, 태양전지, 태양전지의 제조방법
US20110146768A1 (en) * 2009-12-21 2011-06-23 Ppg Industries Ohio, Inc. Silicon thin film solar cell having improved underlayer coating

Also Published As

Publication number Publication date
JP2013515374A (ja) 2013-05-02
TW201143112A (en) 2011-12-01
TWI493733B (zh) 2015-07-21
US20130333752A1 (en) 2013-12-19
RU2012131143A (ru) 2014-01-27
KR20120096098A (ko) 2012-08-29
MX2012006820A (es) 2012-07-23
KR101457283B1 (ko) 2014-11-03
RU2531752C2 (ru) 2014-10-27
JP5524354B2 (ja) 2014-06-18
CN102804390B (zh) 2016-08-31
WO2011084297A3 (en) 2012-06-07
CN102804390A (zh) 2012-11-28
EP2517261A2 (en) 2012-10-31
US20110146768A1 (en) 2011-06-23
IN2012DN05185A (pt) 2015-10-23
EP2517261B1 (en) 2018-08-15
WO2011084297A2 (en) 2011-07-14

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Legal Events

Date Code Title Description
B08F Application fees: application dismissed [chapter 8.6 patent gazette]

Free format text: REFERENTE AS 4A E 5A ANUIDADES.

B08K Patent lapsed as no evidence of payment of the annual fee has been furnished to inpi [chapter 8.11 patent gazette]

Free format text: EM VIRTUDE DO ARQUIVAMENTO PUBLICADO NA RPI 2384 DE 13-09-2016 E CONSIDERANDO AUSENCIA DE MANIFESTACAO DENTRO DOS PRAZOS LEGAIS, INFORMO QUE CABE SER MANTIDO O ARQUIVAMENTO DO PEDIDO DE PATENTE, CONFORME O DISPOSTO NO ARTIGO 12, DA RESOLUCAO 113/2013.