MX2012006820A - Celula solar de pelicula fina de silicio que tiene una sub-capa de recubrimiento mejorada. - Google Patents

Celula solar de pelicula fina de silicio que tiene una sub-capa de recubrimiento mejorada.

Info

Publication number
MX2012006820A
MX2012006820A MX2012006820A MX2012006820A MX2012006820A MX 2012006820 A MX2012006820 A MX 2012006820A MX 2012006820 A MX2012006820 A MX 2012006820A MX 2012006820 A MX2012006820 A MX 2012006820A MX 2012006820 A MX2012006820 A MX 2012006820A
Authority
MX
Mexico
Prior art keywords
thin film
solar cell
film solar
silicon thin
underlayer coating
Prior art date
Application number
MX2012006820A
Other languages
English (en)
Inventor
Songwei Lu
Original Assignee
Ppg Ind Ohio Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ppg Ind Ohio Inc filed Critical Ppg Ind Ohio Inc
Publication of MX2012006820A publication Critical patent/MX2012006820A/es

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
    • C03C17/3417—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials all coatings being oxide coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00—Coatings on glass
    • C03C2217/90—Other aspects of coatings
    • C03C2217/94—Transparent conductive oxide layers [TCO] being part of a multilayer coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Laminated Bodies (AREA)
  • Surface Treatment Of Glass (AREA)
  • Photovoltaic Devices (AREA)
  • Surface Treatment Of Optical Elements (AREA)
  • Formation Of Insulating Films (AREA)
  • Non-Insulated Conductors (AREA)

Abstract

Una célula solar de película fina incluye un sustrato y un sub-recubrimiento formado sobre al menos una porción del sustrato. El sub-recubrimiento incluye una primera capa que tiene óxido de estaño o titania y una segunda capa que tiene una mezcla de óxidos de al menos dos de Sn, P, Si, Ti, Al y Zr. Se forma un recubrimiento conductor sobre al menos una porción del primer recubrimiento, incluyendo el recubrimiento conductor óxidos de uno o más de Zn, Fe, Mn, Al, Ce, Sn, Sb, Hf, Zr, Ni, Zn, Bi, Ti, Co, Cr, Si o In o una aleación de dos o más de estos materiales.
MX2012006820A 2009-12-21 2010-12-06 Celula solar de pelicula fina de silicio que tiene una sub-capa de recubrimiento mejorada. MX2012006820A (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/643,448 US20110146768A1 (en) 2009-12-21 2009-12-21 Silicon thin film solar cell having improved underlayer coating
PCT/US2010/059081 WO2011084297A2 (en) 2009-12-21 2010-12-06 Silicon thin film solar cell having improved underlayer coating

Publications (1)

Publication Number Publication Date
MX2012006820A true MX2012006820A (es) 2012-07-23

Family

ID=44149392

Family Applications (1)

Application Number Title Priority Date Filing Date
MX2012006820A MX2012006820A (es) 2009-12-21 2010-12-06 Celula solar de pelicula fina de silicio que tiene una sub-capa de recubrimiento mejorada.

Country Status (11)

Country Link
US (2) US20110146768A1 (es)
EP (1) EP2517261B1 (es)
JP (1) JP5524354B2 (es)
KR (1) KR101457283B1 (es)
CN (1) CN102804390B (es)
BR (1) BR112012014163A2 (es)
IN (1) IN2012DN05185A (es)
MX (1) MX2012006820A (es)
RU (1) RU2531752C2 (es)
TW (1) TWI493733B (es)
WO (1) WO2011084297A2 (es)

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BE1019881A3 (fr) * 2011-03-16 2013-02-05 Agc Glass Europe Vitrage isolant.
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US20140261663A1 (en) * 2013-03-12 2014-09-18 Ppg Industries Ohio, Inc. High Haze Underlayer For Solar Cell
JP6548896B2 (ja) * 2014-12-26 2019-07-24 株式会社マテリアル・コンセプト 太陽電池モジュールおよびその製造方法
US10672921B2 (en) * 2015-03-12 2020-06-02 Vitro Flat Glass Llc Article with transparent conductive layer and method of making the same
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WO2016181739A1 (ja) * 2015-05-11 2016-11-17 旭硝子株式会社 車両用の断熱ガラスユニット
CN106098816A (zh) * 2016-07-13 2016-11-09 盐城普兰特新能源有限公司 一种碲化镉薄膜太阳能电池及其制备方法
CN106158997B (zh) * 2016-10-09 2017-09-05 天津市职业大学 一种掺杂氧化锡透明导电薄膜的制备方法
CN106477914B (zh) * 2016-10-09 2018-10-30 天津市职业大学 一种复合透明导电薄膜玻璃的制备方法
CN106655995B (zh) * 2017-02-09 2019-03-12 河南弘大新材科技有限公司 自洁式光电转换太阳能瓦
EP3676231A1 (en) * 2017-08-31 2020-07-08 Pilkington Group Limited Coated glass article, method of making the same, and photovoltaic cell made therewith
EP3676416A1 (en) 2017-08-31 2020-07-08 Pilkington Group Limited Chemical vapor deposition process for forming a silicon oxide coating
TWM587826U (zh) 2019-08-15 2019-12-11 凌巨科技股份有限公司 薄膜太陽能電池
CN110774792B (zh) * 2019-09-29 2021-10-01 浙江天浩数码科技有限公司 一种热转印智能打码混合基碳带及其制备方法
WO2024073002A1 (en) * 2022-09-28 2024-04-04 nexTC Corporation Applying a transparent conductive film to fluorine-doped tin oxide

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Also Published As

Publication number Publication date
IN2012DN05185A (es) 2015-10-23
JP2013515374A (ja) 2013-05-02
WO2011084297A3 (en) 2012-06-07
EP2517261A2 (en) 2012-10-31
TWI493733B (zh) 2015-07-21
US20110146768A1 (en) 2011-06-23
CN102804390B (zh) 2016-08-31
US20130333752A1 (en) 2013-12-19
TW201143112A (en) 2011-12-01
EP2517261B1 (en) 2018-08-15
CN102804390A (zh) 2012-11-28
JP5524354B2 (ja) 2014-06-18
RU2012131143A (ru) 2014-01-27
KR20120096098A (ko) 2012-08-29
RU2531752C2 (ru) 2014-10-27
WO2011084297A2 (en) 2011-07-14
BR112012014163A2 (pt) 2016-05-17
KR101457283B1 (ko) 2014-11-03

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