TWI493733B - 具有增進底層塗覆之矽薄膜太陽電池 - Google Patents
具有增進底層塗覆之矽薄膜太陽電池 Download PDFInfo
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- TWI493733B TWI493733B TW099145063A TW99145063A TWI493733B TW I493733 B TWI493733 B TW I493733B TW 099145063 A TW099145063 A TW 099145063A TW 99145063 A TW99145063 A TW 99145063A TW I493733 B TWI493733 B TW I493733B
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- 238000000576 coating method Methods 0.000 title claims description 54
- 239000011248 coating agent Substances 0.000 title claims description 50
- 229910052710 silicon Inorganic materials 0.000 title claims description 9
- 239000010409 thin film Substances 0.000 title claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 97
- 229910001887 tin oxide Inorganic materials 0.000 claims description 47
- 239000000758 substrate Substances 0.000 claims description 46
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 46
- 239000004408 titanium dioxide Substances 0.000 claims description 38
- 239000000203 mixture Substances 0.000 claims description 36
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 28
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 28
- 239000011521 glass Substances 0.000 claims description 25
- 229910052718 tin Inorganic materials 0.000 claims description 19
- 229910001392 phosphorus oxide Inorganic materials 0.000 claims description 18
- VSAISIQCTGDGPU-UHFFFAOYSA-N tetraphosphorus hexaoxide Chemical compound O1P(O2)OP3OP1OP2O3 VSAISIQCTGDGPU-UHFFFAOYSA-N 0.000 claims description 16
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 14
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 14
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims description 14
- 229910052782 aluminium Inorganic materials 0.000 claims description 13
- 229910052719 titanium Inorganic materials 0.000 claims description 13
- 239000010936 titanium Substances 0.000 claims description 13
- 229910052698 phosphorus Inorganic materials 0.000 claims description 12
- 229910052726 zirconium Inorganic materials 0.000 claims description 11
- 229910052725 zinc Inorganic materials 0.000 claims description 8
- 239000002019 doping agent Substances 0.000 claims description 6
- 229910052738 indium Inorganic materials 0.000 claims description 6
- 229910052787 antimony Inorganic materials 0.000 claims description 5
- 229910052731 fluorine Inorganic materials 0.000 claims description 5
- 229910052684 Cerium Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 229910052797 bismuth Inorganic materials 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 229910052735 hafnium Inorganic materials 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 4
- 229910052748 manganese Inorganic materials 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- 239000008241 heterogeneous mixture Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 115
- 239000002243 precursor Substances 0.000 description 19
- 239000000463 material Substances 0.000 description 17
- 229910052751 metal Inorganic materials 0.000 description 14
- 239000002184 metal Substances 0.000 description 14
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 13
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 12
- 238000005229 chemical vapour deposition Methods 0.000 description 12
- 238000000034 method Methods 0.000 description 11
- 239000005329 float glass Substances 0.000 description 10
- 239000010408 film Substances 0.000 description 9
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 7
- -1 polyethylene terephthalate Polymers 0.000 description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 229910052732 germanium Inorganic materials 0.000 description 6
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 6
- 239000011574 phosphorus Substances 0.000 description 6
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 6
- 239000011701 zinc Substances 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 5
- 230000008021 deposition Effects 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 229910001928 zirconium oxide Inorganic materials 0.000 description 5
- VHYFNPMBLIVWCW-UHFFFAOYSA-N 4-Dimethylaminopyridine Chemical compound CN(C)C1=CC=NC=C1 VHYFNPMBLIVWCW-UHFFFAOYSA-N 0.000 description 4
- 238000000149 argon plasma sintering Methods 0.000 description 4
- 239000011247 coating layer Substances 0.000 description 4
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 230000005670 electromagnetic radiation Effects 0.000 description 3
- 229910052707 ruthenium Inorganic materials 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- FGYSRRUNRYVMBF-UHFFFAOYSA-N tris(3-methylbutan-2-yloxy)alumane Chemical compound CC(C([O-])C)C.[Al+3].CC(C([O-])C)C.CC(C([O-])C)C FGYSRRUNRYVMBF-UHFFFAOYSA-N 0.000 description 3
- 229960000549 4-dimethylaminophenol Drugs 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical group CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000000178 monomer Substances 0.000 description 2
- LFGREXWGYUGZLY-UHFFFAOYSA-N phosphoryl Chemical class [P]=O LFGREXWGYUGZLY-UHFFFAOYSA-N 0.000 description 2
- 229920000058 polyacrylate Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 238000005118 spray pyrolysis Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- BDZBKCUKTQZUTL-UHFFFAOYSA-N triethyl phosphite Chemical compound CCOP(OCC)OCC BDZBKCUKTQZUTL-UHFFFAOYSA-N 0.000 description 2
- BNEMLSQAJOPTGK-UHFFFAOYSA-N zinc;dioxido(oxo)tin Chemical compound [Zn+2].[O-][Sn]([O-])=O BNEMLSQAJOPTGK-UHFFFAOYSA-N 0.000 description 2
- FIPWRIJSWJWJAI-UHFFFAOYSA-N Butyl carbitol 6-propylpiperonyl ether Chemical compound C1=C(CCC)C(COCCOCCOCCCC)=CC2=C1OCO2 FIPWRIJSWJWJAI-UHFFFAOYSA-N 0.000 description 1
- 238000006124 Pilkington process Methods 0.000 description 1
- 229920002845 Poly(methacrylic acid) Polymers 0.000 description 1
- 229920001283 Polyalkylene terephthalate Polymers 0.000 description 1
- QOSMNYMQXIVWKY-UHFFFAOYSA-N Propyl levulinate Chemical compound CCCOC(=O)CCC(C)=O QOSMNYMQXIVWKY-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- SMZOGRDCAXLAAR-UHFFFAOYSA-N aluminium isopropoxide Chemical compound [Al+3].CC(C)[O-].CC(C)[O-].CC(C)[O-] SMZOGRDCAXLAAR-UHFFFAOYSA-N 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- YHWCPXVTRSHPNY-UHFFFAOYSA-N butan-1-olate;titanium(4+) Chemical compound [Ti+4].CCCC[O-].CCCC[O-].CCCC[O-].CCCC[O-] YHWCPXVTRSHPNY-UHFFFAOYSA-N 0.000 description 1
- 239000012693 ceria precursor Substances 0.000 description 1
- XFVGXQSSXWIWIO-UHFFFAOYSA-N chloro hypochlorite;titanium Chemical compound [Ti].ClOCl XFVGXQSSXWIWIO-UHFFFAOYSA-N 0.000 description 1
- 239000008199 coating composition Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- ORVACBDINATSAR-UHFFFAOYSA-N dimethylaluminum Chemical compound C[Al]C ORVACBDINATSAR-UHFFFAOYSA-N 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 229920001519 homopolymer Polymers 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002734 metacrylic acid derivatives Chemical class 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000006060 molten glass Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- SOQBVABWOPYFQZ-UHFFFAOYSA-N oxygen(2-);titanium(4+) Chemical class [O-2].[O-2].[Ti+4] SOQBVABWOPYFQZ-UHFFFAOYSA-N 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 229960005235 piperonyl butoxide Drugs 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920001483 poly(ethyl methacrylate) polymer Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 229920001707 polybutylene terephthalate Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 229920002215 polytrimethylene terephthalate Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 229910001415 sodium ion Inorganic materials 0.000 description 1
- HUAUNKAZQWMVFY-UHFFFAOYSA-M sodium;oxocalcium;hydroxide Chemical compound [OH-].[Na+].[Ca]=O HUAUNKAZQWMVFY-UHFFFAOYSA-M 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 229920001897 terpolymer Polymers 0.000 description 1
- JMXKSZRRTHPKDL-UHFFFAOYSA-N titanium ethoxide Chemical compound [Ti+4].CC[O-].CC[O-].CC[O-].CC[O-] JMXKSZRRTHPKDL-UHFFFAOYSA-N 0.000 description 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
- C03C17/3417—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials all coatings being oxide coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03921—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/90—Other aspects of coatings
- C03C2217/94—Transparent conductive oxide layers [TCO] being part of a multilayer coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- Laminated Bodies (AREA)
- Surface Treatment Of Glass (AREA)
- Photovoltaic Devices (AREA)
- Non-Insulated Conductors (AREA)
- Surface Treatment Of Optical Elements (AREA)
- Formation Of Insulating Films (AREA)
Description
本發明大體上係關於太陽電池且於一特定實施例中,係關於具有增進底層塗層結構之非晶矽薄膜太陽電池。
習知非晶矽薄膜太陽電池一般包括一玻璃基板,其上設置有一透明導電氧化物(TCO)接觸層及具有p-n接面之一非晶矽薄膜活性層。後金屬層用作反射體及背面接觸件。TCO具有增加光散射之不規則表面。在太陽電池中,光散射或「濁度」係用以捕捉電池活性區域中之光。電池中捕捉的光越多,則可獲得越高之效率。然而,濁度不可大至對於通過TCO之光的透明性產生不利影響。因此,光捕捉係當嘗試改良太陽電池效率時之重要問題且在薄膜電池設計中特別重要。然而,對於薄膜裝置,由於層厚度遠薄於先前已知單晶裝置中之彼等者,故此光捕捉更困難。降低薄膜厚度時,其等傾向為具有主要平行表面之塗層。此等平行表面一般不提供明顯的光散射。
薄膜太陽電池之另一重要特徵係TCO之表面電阻係數。當電池發光時,藉由輻射產生之電子移經矽並移入透明導電膜中。電子儘可能快速移經導電膜對光電轉化率為重要。即,若透明導電膜之表面電阻係數係較低,則此係期望的。若導電膜係高度透明以允許最大量之太陽光穿過矽層,則此亦係所期望的。
因此,將期望提供一種增進電子流經透明導電氧化物,同時亦增強太陽電池之光散射及透明特性的太陽電池之塗層組態。
一種矽薄膜太陽電池,其包括一基板及在該基板之至少一部份上形成之一底層塗層。該底層塗層包括包含氧化錫或二氧化鈦之一第一層;及包括Sn、P、Si、Ti、Al及Zr中之至少兩者的氧化物的氧化物混合物之一第二層。一導電塗層形成於該第一塗層之至少一部份上,其中該導電塗層包含Zn、Fe、Mn、Al、Ce、Sn、Sb、Hf、Zr、Ni、Zn、Bi、Ti、Co、Cr、Si或In中之一或多者或此等物質中之兩者或多者的合金的氧化物。
在一特定態樣電池中,基板係玻璃,第一層包含厚度在10 nm至25 nm範圍中之氧化錫,第二層包含厚度在20 nm至40 nm範圍中之二氧化矽、氧化錫及氧化磷之混合物且具有在1莫耳%至40莫耳%範圍中,諸如小於20莫耳%的氧化錫及導電塗層包含厚度大於470 nm之摻氟氧化錫。
在另一特定態樣電池中,基板係玻璃,第一層包含厚度在10 nm至15 nm範圍中之二氧化鈦,第二層包含厚度在20 nm至40 nm範圍中之二氧化矽、二氧化鈦及氧化磷之混合物且具有小於25莫耳%之二氧化鈦,及導電塗層包含厚度大於470 nm之摻氟氧化錫。
本發明之塗覆物件包括一基板;一包含氧化物混合物之介電層,該等氧化物包含Sn、P、Si及Ti中之至少兩者之氧化物,其中該介電層係梯度層;及在該介電層上且包含摻氟氧化錫之一導電塗層。在一實例中,該介電層包含二氧化矽、二氧化鈦及氧化磷。在另一實例中,該介電層包含二氧化矽、氧化錫及氧化磷。
參閱附圖將可自以下說明書更徹底理解本發明。
如本文所用,空間或方向術語,諸如「左」、「右」、「內」、「外」、「上方」、「下方」及其類似者如圖中所述闡述本發明。然而,應瞭解本發明可假定各種替代定向且因此此等術語不應視為限制。此外,如本文所用,技術說明書及專利申請範圍中使用之表述尺寸、物理性質、製程參數、成份量、反應條件及其類似物之所有數字應理解為在所有實例中藉由術語「約」而加以修飾。因此,除非另有相反指明,否則以下技術說明書及專利申請範圍中所闡述之數值可依藉由本發明設法獲得之所需性質而變化。最後(但非嘗試)限制專利申請範圍之對等物教義之應用,各數值至少應視為所記錄之有效數字並應用一般四捨五入技術。此外,本文所揭示之所有範圍係應理解為涵蓋起始及終止範圍數值及其中所包括之所有子範圍。例如,「1至10」之指定範圍應認為包括介於(及包括)最小值1與最大值10間之任何及所有子範圍;即,所有範圍以最小值1或更大起始並以最大值10或更小終止,例如1至3.3、4.7至7.5、5.5至10及諸如此類。此外,如本文所用,術語「在......上形成」、「沉積於......上」或「設置於上」意指形成、沉積或設置於上但並不一定與表面直接接觸。例如,一塗層「形成於」一基板上不排除位於所形成之塗層與基板間之相同或不同組合物的一或多個其他塗層或薄膜之存在。如本文所用,術語「聚合物」或「聚合性」包括寡聚體、均聚物、共聚物及三元共聚物,例如由兩種或多種類型聚合物單體形成之聚合物。術語「可見光區」或「可見光」係指具有在380 nm至760 nm範圍中之波長的電磁輻射。術語「紅外光區」或「紅外光輻射」係指具有在大於760 nm至100,000 nm範圍中之波長的電磁輻射。術語「紫外光區」或「紫外光輻射」意指具有在200 nm至小於380 nm範圍中之波長的電磁能。術語「微波區」或「微波輻射」係指具有在300兆赫至300千兆赫範圍中之頻率的電磁輻射。另外,所有的文件,諸如(但不限於)本文所提及之發證專利及專利申請書應認為其之全文係「以引用形式併入」。在以下闡述中,折射率值係參考波長為550奈米(nm)之彼等者。術語「薄膜」係指具有所需或所選擇組合物之塗層的區域。一「層體」包括一或多個「薄膜」。一「塗層」或「塗層堆疊」係由一或多個「層體」組成。
圖1顯示併入本發明特徵之一例示性太陽電池10。太陽電池10包括具有至少一主表面14之一基板12。本發明之一底層塗層16係形成於該主表面14之至少一部份上。在所闡述之實施例中,闡述以多層塗層形式的底層塗層16,例如具有一第一層18及一第二層20之雙層。透明導電氧化物(TCO)塗層22係形成於底層塗層16之至少一部份上。一非晶矽層24係形成於TCO塗層22之至少一部份上。一金屬或含金屬層26係形成於非晶矽層24之至少一部份上。
在本發明之寬廣實務中,基板12可包括具有任何所需特性之任何所需物質。例如,基板可對可見光為透明或半透明。就「透明」而言,其意指具有大於0%至高達100%之可見光透射率。或者,基板12可係半透明。就「半透明」而言,其意指允許電磁能(例如可見光)穿過但散射此能量以使觀察者無法清晰看見相對側上之物體。適宜物質之實例包括(但不限於)塑膠基板(諸如丙烯酸系聚合物,諸如聚丙烯酸酯;聚甲基丙烯酸烷酯,諸如聚甲基丙烯酸甲酯、聚甲基丙烯酸乙酯、聚甲基丙烯酸丙酯及其類似物;聚胺酯;聚碳酸酯;聚對苯二甲酸烷酯,諸如聚對苯二甲酸乙二酯(PET)、聚對苯二甲酸丙二酯、聚對苯二甲酸丁二酯及其類似物;含聚矽氧烷之聚合物;或用於製備此等或其任何混合物之任何單體的共聚物);玻璃基板;或上述任一者之混合物或組合。例如,基板12可包括習知鹼石灰矽酸鹽玻璃、硼矽酸鹽玻璃或含鉛玻璃。玻璃可係透明玻璃。就「透明玻璃」而言,其意指非帶色或非有色玻璃。或者,玻璃可係帶色或另外著色玻璃。玻璃可係經退火或熱處理玻璃。如本文所用,術語「經熱處理」意指回火或至少部份回火。玻璃可係任何類型,諸如習知浮法玻璃且可係具有任何光學性質,例如可見光透射率、紫外光透射率、紅外光透射率及/或總太陽能透射率之任何數值之任何組合物。就「浮法玻璃」而言,其意指藉由習知浮法製程形成之玻璃,其中熔融玻璃係沉積於熔融金屬浴上並受控冷卻以形成浮法玻璃肋帶。雖然不限制本發明,但美國專利第4,746,347、4,792,536、5,030,593、5,030,594、5,240,886、5,385,872及5,393,593號描述適用於基板之玻璃實例。本發明實務上可用之玻璃非限制實例包括Solargreen、Solextra、GL-20、GL-35TM
、Solarbronze、Starphire、Solarphire、Solarphire PV及Solargray玻璃,均購自Pennsylvania之PPG Industries Inc. of Pittsburgh。
基板12可係任何所需尺寸,例如長度、寬度、形狀或厚度。例如,基板12可係平面、曲面或具有平面及曲面部份兩者。在一非限制實施例中,基板12可具有在0.5 mm至10 mm範圍中,諸如1 mm至5 mm,諸如2 mm至4 mm,諸如3 mm至4 mm之厚度。
基板12可具有在參考波長為550奈米(nm)下之高可見光透射率。就「高可見光透射率」而言,其意指在550 nm下大於或等於85%,諸如大於或等於87%,諸如大於或等於90%,諸如大於或等於91%,諸如大於或等於92%之可見光透射率。
在實施本發明中,底層塗層16係具有兩個或多個塗層之多層塗層。第一層18可提供介於基板12與上覆之塗層間的一障壁。已知二氧化矽提供良好障壁性質,特別作為對鈉離子擴散出玻璃基板外之障壁。然而,二氧化矽呈現沉積難度。在實施本發明中,第一層18係選自錫或鈦之至少一種物質的氧化物。例如,第一層18可係厚度小於50 nm,諸如小於40 nm,諸如小於30 nm,諸如小於25 nm,諸如小於20 nm,諸如小於15 nm,諸如在5 nm至25 nm範圍中,諸如在5 nm至15 nm範圍中的氧化錫層。在另一實施例中,第一層18係厚度為小於30 nm,諸如小於25 nm,諸如小於20 nm,諸如小於15 nm,諸如在5 nm至25 nm範圍中,諸如在5 nm至15 nm範圍中,諸如在10 nm至15 nm範圍中的二氧化鈦。
第二層20包括選自矽、鈦、鋁、錫、鋯及/或磷之氧化物的兩種或多種氧化物之混合物。氧化物可以任何所需比例存在。第二層20可係均勻塗層。或者,第二層20可係梯度塗層,其中成份中之至少兩者的相對比例在整個塗層中變化。或者,第二層20可藉由兩種或多種單獨塗層形成,例如各塗層可由一或多種氧化物成份形成。例如,就包含矽、錫及磷之氧化物的第二層20而言,此等氧化物層中之每一者可沉積為單獨層或兩種氧化物可沉積於一層中及其他氧化物沉積於另一相鄰層中。
如上所述,第二層20可包括至少兩種氧化物之混合物,該等氧化物具有選自矽、鈦、鋁、錫、鋯及/或磷之元素。此等混合物包括(但不限於)二氧化鈦及氧化磷;二氧化矽與氧化鋁;二氧化鈦及氧化鋁;二氧化矽與氧化磷;二氧化鈦與氧化磷;二氧化矽與氧化錫、氧化錫與氧化磷、二氧化鈦與氧化錫、氧化鋁與氧化錫、二氧化矽與氧化鋯;二氧化鈦與氧化鋯;氧化鋁與氧化鋯;氧化鋁與氧化磷;氧化鋯與氧化磷;或以上物質之任何組合。氧化物之相對比例可係以任何所需量存在,諸如0.1重量%至99.9重量%之一種物質及99.9重量%至0.1重量%之另一種物質。
另外,第二層20可包括至少三種氧化物之混合物,諸如(但不限於)具有選自矽、鈦、鋁、錫、鋯及/或磷之元素的三種或更多種氧化物。實例包括(但不限於)包括二氧化矽、二氧化鈦及氧化磷之混合物;二氧化矽、氧化錫及氧化磷;二氧化矽、二氧化鈦及氧化鋁;及二氧化矽、二氧化鈦及氧化鋯。例如,第二層20可包括二氧化矽及二氧化鈦與選自氧化鋁、氧化鋯及氧化磷之至少一種其他氧化物之混合物。對於另一實例,第二層20可包括二氧化矽及氧化錫與選自氧化鋁、氧化鋯及氧化磷之至少一種其他氧化物之混合物。在另一實例中,第二層20可包括二氧化矽及氧化磷與選自氧化鋁及二氧化鈦之至少一種其他氧化物之混合物。氧化物之相對比例可係以諸如0.1重量%至99.9重量%之一種物質,99.9重量%至0.1重量%之第二種物質及0.1重量%至99.9重量%之第三種物質之任何所需量存在。
一例示第二層20包括二氧化矽、二氧化鈦及氧化磷之混合物。二氧化矽可以30體積百分比(體積%)至80體積%之範圍存在。二氧化鈦可係以5體積%至69體積%之範圍存在。氧化磷可係以1體積%至15體積%之範圍存在。第二層20可包括二氧化矽、二氧化鈦及氧化磷之混合物,其具有小於40莫耳百分比之二氧化鈦,諸如小於30莫耳百分比之二氧化鈦,諸如小於25莫耳百分比之二氧化鈦,諸如小於20莫耳百分比之二氧化鈦。
另一例示第二層20包括二氧化矽、氧化錫及氧化磷之混合物。二氧化矽可以30體積百分比(體積%)至80體積%之範圍存在。氧化錫可以5體積%至69體積%之範圍存在。氧化磷可以1體積%至15體積%之範圍存在。第二層20可包括二氧化矽、氧化錫及氧化磷之混合物,其具有小於50莫耳百分比之氧化錫,諸如小於40莫耳百分比之氧化錫,諸如小於30莫耳百分比之氧化錫,諸如小於20莫耳百分比之氧化錫,諸如小於15莫耳百分比之氧化錫,諸如在15莫耳百分比至40莫耳百分比範圍中之氧化錫,諸如15莫耳百分比至20莫耳百分比之氧化錫。
第二層20可具有任何所需厚度,諸如(但不限於)10 nm至100 nm,諸如10 nm至80 nm,諸如10 nm至60 nm,諸如10 nm至40 nm,諸如20 nm至40 nm,諸如20 nm至35 nm,諸如20 nm至30 nm,諸如25 nm。
TCO層22包含至少一導電氧化物層,諸如摻雜氧化物層。例如,TCO層22可包括一或多種氧化物物質,諸如(但不限於)Zn、Fe、Mn、Al、Ce、Sn、Sb、Hf、Zr、Ni、Zn、Bi、Ti、Co、Cr、Si或In中之一或多者或此等物質中之兩者或多者的合金的一或多種氧化物,諸如錫酸鋅。TCO層22亦可包括一或多種摻雜劑物質,諸如(但不限於)F、In、Al、P及/或Sb。在一非限制實施例中,TCO層22係摻氟氧化錫塗層,其中氟係以少於以塗層之總重量計之20重量%,諸如少於15重量%,諸如少於13重量%,諸如少於10重量%,諸如少於5重量%,諸如少於4重量%,諸如少於2重量%,諸如少於1重量%之量存在。TCO層22可係非晶體、晶體或至少部份晶體。
TCO層22可具有大於200 nm,諸如大於250 nm,諸如大於350 nm,諸如大於380 nm,諸如大於400 nm,諸如大於420 nm,諸如大於470 nm,諸如大於500 nm,諸如大於600 nm之厚度。在一非限制實施例中,TCO層22包括摻氟氧化錫且具有如上所述之厚度,諸如在350 nm至1,000 nm之範圍中,諸如400 nm至800 nm,諸如500 nm至700 nm,諸如600 nm至700 nm,諸如650 nm。
TCO層22(例如摻氟氧化錫)可具有小於15歐姆/面積(Ω/□),諸如小於14 Ω/□,諸如小於13.5 Ω/□,諸如小於13 Ω/□,諸如小於12 Ω/D,諸如小於11 Ω/□,諸如小於10 Ω/□之表面電阻係數。
TCO層22可具有在5 nm至60 nm範圍中,諸如諸如5 nm至40 nm,諸如5 nm至30 nm,諸如10 nm至30 nm,諸如10 nm至20 nm,諸如10 nm至15 nm,諸如11 nm至15 nm之表面粗糙度(RMS)。第一塗層16之表面粗糙度將係小於TCO層22之表面粗糙度。
非晶矽層24可具有在200 nm至1,000 nm範圍中,諸如200 nm至800 nm,諸如300 nm至500 nm,諸如300 nm至400 nm,諸如350 nm之厚度。
含金屬層26可係金屬或可含有一或多種金屬氧化物物質。適宜金屬氧化物物質實例包括(但不限於)Zn、Fe、Mn、Al、Ce、Sn、sb、Hf、Zr、Ni、Zn、Bi、Ti、Co、Cr、Si或In中之一或多者或此等物質中之兩者或多者的合金的氧化物,諸如錫酸鋅。含金屬層26可具有在50 nm至500 nm範圍中,諸如50 nm至300 nm,諸如50 nm至200 nm,諸如100 nm至200 nm,諸如150 nm之厚度。
藉由任何習知方法,諸如(但不限於)噴霧熱解、化學氣相沉積(CVD)或磁控濺鍍真空沉積(MSVD)可於基板12之至少一部份上形成塗層,例如底層塗層16、TCO層22、非晶矽層24及金屬層26。所有層體可藉由相同方法形成或不同層體可藉由不同方法形成。在噴霧熱解方法中,具有一或多種氧化物前驅體物質(例如二氧化鈦及/或二氧化矽及/或氧化鋁及/或氧化磷及/或氧化鋯之前驅體物質)之有機或含金屬前驅體組合物係以懸浮液(例如水溶液或非水溶液)攜載,且當基板係處於足以引起前驅體組合物分解並於該基板上形成塗層之高溫下時導向基板表面。組合物可包括一或多種摻雜劑物質。在CVD方法中,前驅體組合物係以載氣(例如氮氣)攜載且導向受熱基板。在MSVD方法中,一或多種含金屬陰極靶係於減壓惰性或含氧氛圍中濺鍍以於基板上沉積一濺鍍塗層。在塗覆期間或之後可加熱基板以促使濺鍍塗層結晶而形成塗層。
在本發明之一非限制性實務中,在習知之浮法玻璃肋帶製程中,可於一或多個位置使用一或多個CVD塗層設備。例如,當浮法玻璃肋帶行經錫浴時,在其離開錫浴後,在其進入退火窯前,當其行經退火窯或在其離開退火窯後,可使用CVD塗層設備。由於CVD方法可塗覆移動中之浮法玻璃肋帶,且又能承受與製造浮法玻璃肋帶有關之苛刻環境,故CVD方法係極其適於在熔融錫浴中之浮法玻璃肋帶上沉積塗層。美國專利第4,853,257、4,971,843、5,536,718、5,464,657、5,714,199及5,599,387號描述可用於實施本發明以在熔融錫浴中塗覆浮法玻璃肋帶之CVD塗層設備及方法。
在一非限制實施例中,可將一或多個CVD塗佈機置於熔融錫池上方之錫浴中。當浮法玻璃肋帶移經錫浴時,可將經蒸發之前驅體組合物加入載氣並引向該肋帶之上表面上。前驅體組合物分解,在肋帶上形成一塗層。塗層組合物可沉積於其中肋帶之溫度係小於1300℉(704℃),諸如小於1250℉(677℃),諸如小於1200℉(649℃),諸如小於1190℉(643℃),諸如小於1150℉(621℃),諸如小於1130℉(610℃),諸如在1190℉至1200℉(643℃至649℃)之範圍中的位置處之肋帶上。此特別可用於沉積表面電阻係數減小之TCO層22(例如摻氟氧化錫),此因沉積溫度越低,則所得表面電阻係數越低之故。
例如,為形成包含二氧化矽與二氧化鈦之第二層20,該組合物包含二氧化矽前驅體與二氧化鈦前驅體兩者。二氧化矽前驅體之一非限制實例係原矽酸四乙酯(TEOS)。
二氧化鈦實例包括(但不限於)鈦之氧化物、次氧化物或過氧化物。在一實施例中,二氧化鈦前驅體物質可包括一或多種烷氧基鈦,諸如(但不限於)甲氧化鈦、乙氧化鈦、丙氧化鈦、丁氧化鈦及其類似物;或其異構體,例如異丙氧化鈦、四乙氧化鈦及其類似物。適於實施本發明之例示前驅體物質包括(但不限於)鈦酸四異丙酯(TPT)。或者,二氧化鈦前驅體物質可係四氯化鈦。氧化鋁前驅體實例包括(但不限於)二甲基異丙氧基鋁(DMAP)及三第二丁氧基鋁(ATSB)。藉由在室溫惰性氛圍中以2:1之莫耳比混合二甲基鋁及異丙氧基鋁可製造二甲基異丙氧基鋁。氧化磷前驅體實例包括(但不限於)亞磷酸三乙酯。氧化鋯前驅體實例包括(但不限於)烷氧化鋯。
具有二氧化矽與二氧化鈦組合之第二層20提供優於先前氧化物組合之優點。例如,藉由改變二氧化矽與二氧化鈦之量,使低折射率物質如二氧化矽之(在550 nm下之折射率為1.5)與高折射率物質如二氧化鈦(在550 nm下之折射率為2.48)之組合可使第二層20之折射率在此等兩個極端間變化。此特別可用於提供具有顏色或虹彩抑制性質之第二層20。
然而,二氧化鈦之沉積速度一般遠快於二氧化矽。故在一般沉積條件下,此將二氧化矽之量限制於不多於約50重量%,此接著限制所得二氧化矽/二氧化鈦塗層之折射率的下級範圍。因此,可將摻雜劑物質加入二氧化矽與二氧化鈦前驅體組合物以加快二氧化矽之沉積速度。摻雜劑形成所得氧化物混合物之一部份並因此可經選擇以為所得塗層提供增強之性能性質。實施本發明可使用之摻雜劑實例包括(但不限於)含一或多種磷、鋁及鋯之物質以於所得塗層中形成此等物質之混合物。氧化磷前驅體物質實例包括(但不限於)亞磷酸三乙酯。氧化鋁前驅體物質實例包括三第二丁氧化鋁(ATSB)及二甲基異丙氧基鋁(DMAP)。氧化鋯前驅體實例包括烷氧化鋯。
圖2顯示併入本發明特徵之另一塗覆物件40。此物件40對低發射率或太陽控制應用特別有用。該物件40包括如上所述之一基板12。一梯度介電層42係形成於基板12之至少一部份上。如上所述之一TCO層22可形成於介電層42之至少一部份上。介電層42可包括兩種或多種,例如三種或多種之混合物,第二層20可包括至少三種氧化物之混合物,諸如(但不限於)選自矽、鈦、鋁、錫、鋯及/或磷之三種或多種氧化物。在一實例中,介電層42包含二氧化矽、二氧化鈦及氧化磷之混合物,其中二氧化矽之比例遍及層42變化且在靠近基板12之表面處較低及在層42之外表面處較高。氧化鈦之比例在靠近基板12之表面處較低及在層42之外表面處較高。氧化磷之比例可係在整個層42中實質上相同或亦可隨二氧化矽或二氧化鈦改變。
提供以下實例以闡述本發明之各種非限制態樣。然而,應瞭解本發明不限於此等具體實例。
預示性實例1
一塗覆物件包括厚度為3.2 mm之一透明玻璃基板。於該基板表面上形成厚度為15 nm之一氧化錫層。於氧化錫層上形成二氧化矽、氧化錫及氧化磷之一介電層且包括1莫耳%至40莫耳%之氧化錫。該介電層具有20 nm至40 nm之厚度。一摻氟氧化錫層係形成於該介電層上且具有至少470 nm之厚度。該等塗覆層係藉由CVD而形成。
預示性實例2
一塗覆物件包括厚度為3.2 mm之一透明玻璃基板。於該基板表面上形成厚度為10-15 nm之二氧化鈦層。於二氧化鈦層上形成二氧化矽、二氧化鈦及氧化磷之一介電層且包括少於25莫耳%之二氧化鈦。該介電層具有20 nm至40 nm之厚度。於該介電層上形成一摻氟氧化錫層且具有至少470 nm之厚度。該等塗覆層係藉由CVD而形成。
預示性實例3
一塗覆物件包括厚度為3.2 mm之一透明玻璃基板。於該基板表面上形成厚度為15 nm之氧化錫層。於氧化錫層上形成二氧化矽、二氧化鈦及氧化磷之一介電層且包括15莫耳%至20莫耳%之氧化錫。該介電層具有25 nm之厚度。於該介電層上形成一摻氟氧化錫層且具有350 nm之厚度。該等塗覆層係藉由CVD而形成。
熟習此項技術者應輕易瞭解到在不脫離前面所提及說明書中所揭示之概念下,可對本發明作出修飾。因此,本文詳細描述之特定實施例僅係例示性且不限制本發明之範圍,本發明之範圍將由隨附專利申請範圍之整個範圍及其任何及所有對等物所給出。
10...太陽電池
12...基板
14...主表面
16...底層塗層
18...第一層
20...第二層
22...TCO層
24...非晶矽層
26...金屬或含金屬層
40...塗覆物件
42...介電層
圖1係併入本發明一底層塗層之一太陽電池之側面截面圖(不按比例繪製);及
圖2係具有本發明一底層塗層之另一塗覆物件的側面截面圖(不按比例繪製)。
10...太陽電池
12...基板
14...主表面
16...底層塗層
18...第一塗層
20...第二層
22...TCO層
24...非晶矽層
26...金屬或含金屬層
Claims (9)
- 一種矽薄膜太陽電池,其包括:基板;形成於該基板之至少一部份上之底層塗層,該底層塗層包括或不包括包含氧化錫或二氧化鈦之第一層;及該底層塗層包括:包含氧化物之組成不均一混合物的第二層,該等氧化物包含(i)Si、Sn及P或(ii)Si、Ti及P,且其中至少兩氧化物的相對比例在第二層中變化;及形成於該底層塗層之至少一部份上之導電塗層,其中該導電塗層包含Zn、Fe、Mn、Al、Ce、Sn、Sb、Hf、Zr、Ni、Zn、Bi、Ti、Co、Cr、Si或In中之一或多者或此等物質中之兩種或多種的合金的氧化物。
- 如請求項1之太陽電池,其中該基板係玻璃。
- 如請求項1之太陽電池,其中該第一層具有在10nm至25nm範圍中之厚度。
- 如請求項1之太陽電池,其中該第二層包含30-80體積%之二氧化矽、1-15體積%之氧化磷及5-69體積%之二氧化鈦,且具有在10nm至120nm範圍中之厚度。
- 如請求項1之太陽電池,其中該第二層具有在20nm至40nm範圍中之厚度。
- 如請求項1之太陽電池,其中該導電塗層包含選自F、In、Al、P及Sb之至少一摻雜劑。
- 如請求項6之太陽電池,其中該導電塗層包含摻氟氧化錫。
- 如請求項1之太陽電池,其中該基板係玻璃,該第一層包含厚度在10nm至25nm範圍中之氧化錫,該第二層包含厚度在20nm至40nm範圍中之二氧化矽、氧化錫及氧化磷的混合物且具有在1莫耳%至40莫耳%範圍中之氧化錫,及該導電塗層包含厚度大於470nm之摻氟氧化錫。
- 如請求項1之太陽電池,其中該基板係玻璃,該第一層包含厚度在10nm至15nm範圍中之二氧化鈦,該第二層包含厚度在20nm至40nm範圍中之二氧化矽、二氧化鈦及氧化磷的混合物且具有小於25莫耳%之二氧化鈦,及該導電塗層包含厚度大於470nm之摻氟氧化錫。
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- 2010-12-06 RU RU2012131143/28A patent/RU2531752C2/ru active
- 2010-12-06 CN CN201080055989.6A patent/CN102804390B/zh active Active
- 2010-12-06 BR BR112012014163A patent/BR112012014163A2/pt not_active IP Right Cessation
- 2010-12-06 JP JP2012545992A patent/JP5524354B2/ja active Active
- 2010-12-06 EP EP10790812.1A patent/EP2517261B1/en active Active
- 2010-12-06 WO PCT/US2010/059081 patent/WO2011084297A2/en active Application Filing
- 2010-12-21 TW TW099145063A patent/TWI493733B/zh active
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- 2012-11-16 US US13/678,631 patent/US20130333752A1/en not_active Abandoned
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Also Published As
Publication number | Publication date |
---|---|
US20130333752A1 (en) | 2013-12-19 |
MX2012006820A (es) | 2012-07-23 |
TW201143112A (en) | 2011-12-01 |
KR20120096098A (ko) | 2012-08-29 |
JP5524354B2 (ja) | 2014-06-18 |
WO2011084297A2 (en) | 2011-07-14 |
EP2517261A2 (en) | 2012-10-31 |
RU2012131143A (ru) | 2014-01-27 |
JP2013515374A (ja) | 2013-05-02 |
IN2012DN05185A (zh) | 2015-10-23 |
KR101457283B1 (ko) | 2014-11-03 |
BR112012014163A2 (pt) | 2016-05-17 |
RU2531752C2 (ru) | 2014-10-27 |
EP2517261B1 (en) | 2018-08-15 |
WO2011084297A3 (en) | 2012-06-07 |
CN102804390A (zh) | 2012-11-28 |
CN102804390B (zh) | 2016-08-31 |
US20110146768A1 (en) | 2011-06-23 |
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