IN2012DN00357A - - Google Patents

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Publication number
IN2012DN00357A
IN2012DN00357A IN357DEN2012A IN2012DN00357A IN 2012DN00357 A IN2012DN00357 A IN 2012DN00357A IN 357DEN2012 A IN357DEN2012 A IN 357DEN2012A IN 2012DN00357 A IN2012DN00357 A IN 2012DN00357A
Authority
IN
India
Prior art keywords
layer
depositing
zinc
cadmium sulfide
cadmium
Prior art date
Application number
Other languages
English (en)
Inventor
C Powell Rick
gloeckler Markus
Buller Benyamin
Shao Rui
Original Assignee
First Solar Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by First Solar Inc filed Critical First Solar Inc
Publication of IN2012DN00357A publication Critical patent/IN2012DN00357A/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
    • H01L31/02966—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe including ternary compounds, e.g. HgCdTe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03925—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIIBVI compound materials, e.g. CdTe, CdS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/073—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
    • H01L31/1832—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising ternary compounds, e.g. Hg Cd Te
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/543—Solar cells from Group II-VI materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)
IN357DEN2012 2009-07-10 2010-07-09 IN2012DN00357A (pt)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US22465809P 2009-07-10 2009-07-10
US22501309P 2009-07-13 2009-07-13
PCT/US2010/041500 WO2011006050A1 (en) 2009-07-10 2010-07-09 Photovoltaic devices including zinc

Publications (1)

Publication Number Publication Date
IN2012DN00357A true IN2012DN00357A (pt) 2015-08-21

Family

ID=43426538

Family Applications (1)

Application Number Title Priority Date Filing Date
IN357DEN2012 IN2012DN00357A (pt) 2009-07-10 2010-07-09

Country Status (12)

Country Link
US (1) US20110005594A1 (pt)
EP (1) EP2452370A4 (pt)
JP (1) JP2012533178A (pt)
KR (1) KR20120052296A (pt)
CN (1) CN102484170A (pt)
AU (1) AU2010271339A1 (pt)
IL (1) IL217463A0 (pt)
IN (1) IN2012DN00357A (pt)
MA (1) MA33504B1 (pt)
TW (1) TW201108452A (pt)
WO (1) WO2011006050A1 (pt)
ZA (1) ZA201200354B (pt)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102770969A (zh) * 2009-12-21 2012-11-07 第一太阳能有限公司 具有缓冲层的光伏装置
TWI442582B (zh) * 2010-09-22 2014-06-21 First Solar Inc 用於太陽能電池的氧化鎘鋅緩衝層
WO2012040299A2 (en) 2010-09-22 2012-03-29 First Solar, Inc A thin-film photovoltaic device with a zinc magnesium oxide window layer
US8247686B2 (en) 2011-05-31 2012-08-21 Primestar Solar, Inc. Multi-layer N-type stack for cadmium telluride based thin film photovoltaic devices and methods of making
US8188562B2 (en) * 2011-05-31 2012-05-29 Primestar Solar, Inc. Multi-layer N-type stack for cadmium telluride based thin film photovoltaic devices and methods of making
US8241930B2 (en) 2011-05-31 2012-08-14 Primestar Solar, Inc. Methods of forming a window layer in a cadmium telluride based thin film photovoltaic device
WO2013059178A1 (en) * 2011-10-17 2013-04-25 First Solar, Inc. Photovoltaic device and method of formation
CN104025252B (zh) 2011-11-18 2018-04-06 第一太阳能有限公司 提供用于光伏模块的单步骤氯化镉蒸气处理的方法和设备
US9054245B2 (en) 2012-03-02 2015-06-09 First Solar, Inc. Doping an absorber layer of a photovoltaic device via diffusion from a window layer
WO2014121187A2 (en) 2013-02-01 2014-08-07 First Solar, Inc. Photovoltaic device including a p-n junction and method of manufacturing
US9276154B2 (en) * 2013-02-07 2016-03-01 First Solar, Inc. Photovoltaic device with protective layer over a window layer and method of manufacture of the same
US11876140B2 (en) 2013-05-02 2024-01-16 First Solar, Inc. Photovoltaic devices and method of making
US10062800B2 (en) 2013-06-07 2018-08-28 First Solar, Inc. Photovoltaic devices and method of making
WO2014210451A2 (en) * 2013-06-28 2014-12-31 First Solar, Inc. Method of manufacturing a photovoltaic device
US10529883B2 (en) * 2014-11-03 2020-01-07 First Solar, Inc. Photovoltaic devices and method of manufacturing
KR101779770B1 (ko) * 2016-03-04 2017-09-19 주식회사 아바코 태양 전지 및 이의 제조 방법
CN105845759A (zh) * 2016-04-15 2016-08-10 武汉锦隆工程技术有限公司 一种太阳能电池及带防撞报警功能的太阳能路障
CN109716538B (zh) * 2016-07-14 2023-01-03 第一阳光公司 太阳能电池及其制造方法
CN107768451A (zh) * 2017-08-31 2018-03-06 成都中建材光电材料有限公司 一种具有锡酸锌镁层的碲化镉太阳电池结构及其制备方法
US20210376177A1 (en) * 2018-10-24 2021-12-02 First Solar, Inc. Buffer Layers for Photovoltaic Devices with Group V Doping

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4345107A (en) * 1979-06-18 1982-08-17 Ametek, Inc. Cadmium telluride photovoltaic cells
JPS62203384A (ja) * 1986-03-03 1987-09-08 Matsushita Electric Ind Co Ltd 光起電力装置およびその製造方法
US4753684A (en) * 1986-10-31 1988-06-28 The Standard Oil Company Photovoltaic heterojunction structures
JPH01179743A (ja) * 1988-01-08 1989-07-17 Matsushita Electric Ind Co Ltd ＣｄＳ焼結膜の製造方法
US5248349A (en) * 1992-05-12 1993-09-28 Solar Cells, Inc. Process for making photovoltaic devices and resultant product
JPH06350116A (ja) * 1993-06-04 1994-12-22 Matsushita Electric Ind Co Ltd 太陽電池
JP3497249B2 (ja) * 1994-09-16 2004-02-16 松下電池工業株式会社 太陽電池の製造法
WO1997021252A1 (fr) * 1995-12-07 1997-06-12 Japan Energy Corporation Procede de fabrication d'un dispositif photoelectrique de conversion
US5972732A (en) * 1997-12-19 1999-10-26 Sandia Corporation Method of monolithic module assembly
US6037241A (en) * 1998-02-19 2000-03-14 First Solar, Llc Apparatus and method for depositing a semiconductor material
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DE59914510D1 (de) * 1999-03-29 2007-11-08 Antec Solar Energy Ag Vorrichtung und Verfahren zur Beschichtung von Substraten durch Aufdampfen mittels eines PVD-Verfahrens
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Also Published As

Publication number Publication date
AU2010271339A1 (en) 2012-02-16
JP2012533178A (ja) 2012-12-20
KR20120052296A (ko) 2012-05-23
TW201108452A (en) 2011-03-01
IL217463A0 (en) 2012-02-29
AU2010271339A2 (en) 2012-02-16
CN102484170A (zh) 2012-05-30
MA33504B1 (fr) 2012-08-01
EP2452370A4 (en) 2013-01-02
ZA201200354B (en) 2012-09-26
WO2011006050A1 (en) 2011-01-13
US20110005594A1 (en) 2011-01-13
EP2452370A1 (en) 2012-05-16

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