TW201108452A - Photovoltaic devices including zinc - Google Patents
Photovoltaic devices including zinc Download PDFInfo
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- TW201108452A TW201108452A TW099122686A TW99122686A TW201108452A TW 201108452 A TW201108452 A TW 201108452A TW 099122686 A TW099122686 A TW 099122686A TW 99122686 A TW99122686 A TW 99122686A TW 201108452 A TW201108452 A TW 201108452A
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- Prior art keywords
- layer
- zinc
- cadmium
- photovoltaic cell
- transparent conductive
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- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 title claims abstract description 69
- 229910052725 zinc Inorganic materials 0.000 title claims abstract description 69
- 239000011701 zinc Substances 0.000 title claims abstract description 69
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims abstract description 52
- 238000000151 deposition Methods 0.000 claims abstract description 50
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims abstract description 44
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 claims abstract description 16
- 238000004519 manufacturing process Methods 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 49
- 239000000758 substrate Substances 0.000 claims description 26
- 230000008021 deposition Effects 0.000 claims description 24
- 238000000137 annealing Methods 0.000 claims description 21
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 19
- 229910052718 tin Inorganic materials 0.000 claims description 14
- SKJCKYVIQGBWTN-UHFFFAOYSA-N (4-hydroxyphenyl) methanesulfonate Chemical compound CS(=O)(=O)OC1=CC=C(O)C=C1 SKJCKYVIQGBWTN-UHFFFAOYSA-N 0.000 claims description 13
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 13
- UQMZPFKLYHOJDL-UHFFFAOYSA-N zinc;cadmium(2+);disulfide Chemical compound [S-2].[S-2].[Zn+2].[Cd+2] UQMZPFKLYHOJDL-UHFFFAOYSA-N 0.000 claims description 13
- 239000011521 glass Substances 0.000 claims description 12
- QWUZMTJBRUASOW-UHFFFAOYSA-N cadmium tellanylidenezinc Chemical compound [Zn].[Cd].[Te] QWUZMTJBRUASOW-UHFFFAOYSA-N 0.000 claims description 11
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 10
- 229910052757 nitrogen Inorganic materials 0.000 claims description 10
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 claims description 9
- 238000006243 chemical reaction Methods 0.000 claims description 9
- 230000004888 barrier function Effects 0.000 claims description 8
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 8
- 229910052797 bismuth Inorganic materials 0.000 claims description 7
- 238000010438 heat treatment Methods 0.000 claims description 7
- 230000003647 oxidation Effects 0.000 claims description 7
- 238000007254 oxidation reaction Methods 0.000 claims description 7
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 7
- 229910001887 tin oxide Inorganic materials 0.000 claims description 7
- 229910052793 cadmium Inorganic materials 0.000 claims description 6
- 238000005520 cutting process Methods 0.000 claims description 6
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 5
- 239000011787 zinc oxide Substances 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 206010036790 Productive cough Diseases 0.000 claims description 2
- 239000008267 milk Substances 0.000 claims description 2
- 210000004080 milk Anatomy 0.000 claims description 2
- 235000013336 milk Nutrition 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 210000003802 sputum Anatomy 0.000 claims description 2
- 208000024794 sputum Diseases 0.000 claims description 2
- 229940071182 stannate Drugs 0.000 claims description 2
- 238000004073 vulcanization Methods 0.000 claims description 2
- 239000000839 emulsion Substances 0.000 claims 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- BCZWPKDRLPGFFZ-UHFFFAOYSA-N azanylidynecerium Chemical compound [Ce]#N BCZWPKDRLPGFFZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052796 boron Inorganic materials 0.000 claims 1
- WSUTUEIGSOWBJO-UHFFFAOYSA-N dizinc oxygen(2-) Chemical compound [O-2].[O-2].[Zn+2].[Zn+2] WSUTUEIGSOWBJO-UHFFFAOYSA-N 0.000 claims 1
- 229910052749 magnesium Inorganic materials 0.000 claims 1
- 239000011777 magnesium Substances 0.000 claims 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims 1
- 229910052703 rhodium Inorganic materials 0.000 claims 1
- 239000010948 rhodium Substances 0.000 claims 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims 1
- 229910052708 sodium Inorganic materials 0.000 claims 1
- 239000011734 sodium Substances 0.000 claims 1
- 210000002784 stomach Anatomy 0.000 claims 1
- 239000004575 stone Substances 0.000 claims 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 claims 1
- 239000011135 tin Substances 0.000 claims 1
- QHGNHLZPVBIIPX-UHFFFAOYSA-N tin(ii) oxide Chemical compound [Sn]=O QHGNHLZPVBIIPX-UHFFFAOYSA-N 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 description 37
- 229910052984 zinc sulfide Inorganic materials 0.000 description 10
- 229910004613 CdTe Inorganic materials 0.000 description 7
- 239000005083 Zinc sulfide Substances 0.000 description 6
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 6
- 229910007709 ZnTe Inorganic materials 0.000 description 5
- 239000006096 absorbing agent Substances 0.000 description 5
- -1 for example Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 description 4
- 229910017115 AlSb Inorganic materials 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 3
- 229910005540 GaP Inorganic materials 0.000 description 3
- 229910005542 GaSb Inorganic materials 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 3
- 229910004262 HgTe Inorganic materials 0.000 description 3
- 229910000673 Indium arsenide Inorganic materials 0.000 description 3
- 229910017680 MgTe Inorganic materials 0.000 description 3
- 229910017231 MnTe Inorganic materials 0.000 description 3
- 238000003723 Smelting Methods 0.000 description 3
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 3
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 3
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 3
- 229910052950 sphalerite Inorganic materials 0.000 description 3
- 229910052717 sulfur Inorganic materials 0.000 description 3
- 239000011593 sulfur Substances 0.000 description 3
- 230000032258 transport Effects 0.000 description 3
- 229910004611 CdZnTe Inorganic materials 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- ONVGHWLOUOITNL-UHFFFAOYSA-N [Zn].[Bi] Chemical compound [Zn].[Bi] ONVGHWLOUOITNL-UHFFFAOYSA-N 0.000 description 2
- 239000011358 absorbing material Substances 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- JWVAUCBYEDDGAD-UHFFFAOYSA-N bismuth tin Chemical compound [Sn].[Bi] JWVAUCBYEDDGAD-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 244000144730 Amygdalus persica Species 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- 229910000906 Bronze Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 244000166124 Eucalyptus globulus Species 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 235000006040 Prunus persica var persica Nutrition 0.000 description 1
- HGHKJGDRGYURAQ-UHFFFAOYSA-N [Bi]=S.[Bi] Chemical compound [Bi]=S.[Bi] HGHKJGDRGYURAQ-UHFFFAOYSA-N 0.000 description 1
- PGTXKIZLOWULDJ-UHFFFAOYSA-N [Mg].[Zn] Chemical compound [Mg].[Zn] PGTXKIZLOWULDJ-UHFFFAOYSA-N 0.000 description 1
- 229940037003 alum Drugs 0.000 description 1
- CZJCMXPZSYNVLP-UHFFFAOYSA-N antimony zinc Chemical compound [Zn].[Sb] CZJCMXPZSYNVLP-UHFFFAOYSA-N 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 210000003298 dental enamel Anatomy 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 210000000003 hoof Anatomy 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005118 spray pyrolysis Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- ZULTYUIALNTCSA-UHFFFAOYSA-N zinc hydride Chemical compound [ZnH2] ZULTYUIALNTCSA-UHFFFAOYSA-N 0.000 description 1
- 229910000051 zinc hydride Inorganic materials 0.000 description 1
- NWONKYPBYAMBJT-UHFFFAOYSA-L zinc sulfate Chemical compound [Zn+2].[O-]S([O-])(=O)=O NWONKYPBYAMBJT-UHFFFAOYSA-L 0.000 description 1
- 235000009529 zinc sulphate Nutrition 0.000 description 1
- 239000011686 zinc sulphate Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
- H01L31/02966—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe including ternary compounds, e.g. HgCdTe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03925—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIIBVI compound materials, e.g. CdTe, CdS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/073—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
- H01L31/1832—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising ternary compounds, e.g. Hg Cd Te
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Description
201108452 六、發明說明: 【發明所屬^_技術領】 優先權之主張 在35 U.S.C.§119(e)下,本申請案主張對2〇〇9年7月10 曰所提出的美國暫時性專利申請案序號61/224,658及2009 年7月13曰所提出的美國暫時性專利申請案序號 61/225,013(其等藉此以參考方式併入本文)之優先權。 工藝領域
本發明係關於一種含鋅的光伏打裝置及半導體層。 t先前技術:J 發明背景 在光伏打裝置之製造期間,可將數層半導體材料層塗 佈至基材,謂-層提供作為窗第4提供作為吸 收層。該窗π層可允許太陽輻射穿透到達吸收層(於此光能 轉換成電能)。某些光伏打裝置可使用亦為電荷導體的透明 薄膜。 該導電賴可包括-包含透日轉電氧化物(諸如錫酸 録(cadmium stannate oxide))的透明導電層。料明導電層 可允許光通過半導體窗口層職活性光吸收材料,且亦提 供作為歐姆制’⑽光產生的電荷細傳開該光吸 收材料。可在半導體層的背表面上形成—背電極。 C發明内容3 光伏打電池可包括-與基材晚連的透明導電氧化物屏 與多層半導體材料層。該等半導體材料層可包括雙層^ £ 201108452 可包括η型半導體窗口層與p型半導體吸收層。該n型窗口層 及Ρ型吸收層可配置成彼此接觸以產生電場。光子可在與η 型窗口層接觸後解放電子電洞對,將電子輸送至11邊及電洞 輸送至ρ邊。電子可經由外部電流路徑流回13邊。所產生的 電子流提供電流,其與從電場產生的電壓結合產生電力。 結果光子能量轉換成電能。 因此,光伏打電池可包括一硫化鎘窗口層及一碲化鎘 吸收層。可併入硫化鎘辞層以擴大能帶隙能量及允許調諧 在硫化鎘辞與碲化鎘間之帶能差距。可經由多種技術(包括 ’儿積έ鋅層)來製造该硫化編鋅層。例如,可將碲化錫鋅層 沉積到硫化鎘層上,經由後沉積退火步驟或藉由在高溫下 沉積(如例如以蒸氣傳輸沉積)該層,因此讓鋅擴散進入硫化 鎘中。類似地,可將硫化鋅層沉積到硫化鎘層上,讓鋅擴 散。此外,可將鎘、鋅及硫粉混合在一起,隨後沉積。所 製造與此結構一致的裝置已闡明增加開路電壓及短路電 流。但是,想要藉由單獨變化鋅含量來控制在硫化鎘層與 碲化鎘鋅層間之交換反應。 可藉由變化該結構的初始鋅分佈獲得調控硫化鎘變成 硫化鎘鋅之反應。例如,該反應可藉由沉積純的碲化鋅層, 然後持續沉積具有較低鋅百分比的碲化鎘鋅層來激發。可 在沉積期間發生硫化鎘轉換成硫化鎘鋅而不需要退火。二 種層之組合可允許整體轉換有較好的可控制性。合適的結 構包括 CdS/ZnTe/CdZnTe/CdTe、Cds/CdZnTe/CdTe、
CdS/ZnTe/CdTe、Cds/ZnS/cdTe、及其衍生物或變化物。 201108452 該碲化鋅層的層厚度可為能提供足夠的鋅以將硫化錦 層轉換至想要的程度(若不存在其它含鋅層時)或少於想要 (例如,在硫化鎘鋅中20%至約40%的鋅),但是然後繼續, 由於沉積含有辞含量5%至約1〇%的碲化鎘鋅膜。結晶程度 可變化,例如,該硫化鎘鋅可為幾乎非晶相或為高度結晶。 在一個觀點中,製造光伏打電池的方法可包括將一硫 化鎘層沉積在透明導電氧化物堆疊上;在該硫化鎘層上沉 積一含鋅層;及在該含鋅層上沉積一碲化鎘層。 該方法可包括形成硫化鎘辞,其中該形成包括退火一 或多層。可在溫度範圍約4〇〇°C至約800。〇、約5〇〇。〇至約700 C或約550 C至約650°C下進行該一或多個沉積步驟。可在 約550 C或約600 C下進行該一或多個沉積步驟。該一或多 個沉積步驟可包括傳輸蒸氣。該方法可包括退火該硫化鎘 層及含辞層。該方法可包括退火該碲化鎘層。該退火可包 括在溫度範圍約40(TC至約80(rc,約〗^^至約7〇〇t:,或 約550°C至約650°C下加熱該硫化鎘層及含鋅層。該退火可 包括在約550 C或約650。(:下加熱該硫化鎘層及含鋅層。該 έ鋅層可包括碲化鋅或碌化編鋅。該碲化錢鋅可具有約2% 至約10%_含量。該碲化鱗可具有鋅含量在範圍約4% 至約8%。該碲化鎘鋅可具有辞含量在範圍約5%至約6%。 該-或多個沉積步财㈣在硫倾層與耗福鋅間之交 換反應。該含鋅層亦可包括硫化鋅。該含鋅層可包括一在 碲化辞層上的碲化鎘鋅層。該碲化鎘鋅層所包含的辞濃度 可少於碲化辞層。該碲化鱗層可具有約2%至物%的辞 £ 201108452 3里n亥蹄化锡辞層可且右你人θ, 碲化福鋅岸可呈亡 ^在範圍約4%至約抓。該 ’曰了 “有辞含量在範圍約5% 沉積步鄉可Μ丨D6/4-或多個 ^ 在^化鎘層與碲化鎘鋅層間之交換反鹿。 厂透明導電氧化物堆疊可在透明導電氧化物声上勺、二 衝層,其中該透明H曰匕括一緩 4月…化物層配置在一或多層阻障層上。 材上匕括將韻明導電氧化物堆疊沉積在第一基 夕另基材可包括玻璃,例如,_玻璃。該-或 ς=層每層可包括氮切、摻軸的氮切、氧化秒、 化y的乳切、摻雜侧氮切、摻雜磷的氮化石夕、氧 乳切錢化錫。該透明導電氧化物層可包括錦及錫、 =或氧化辞層。該緩衝層可包括氧化辞錫、氧化錫、 •或乳化鋅鎂哺方法可包括退火該透明導電氧化物 :邊、。財法可包括將-後部觸點沉積在該碲化錦層上。 該方法可包括將-後部支撐物沉積在該後部觸點上。 —☆在一個觀點中,光伏打電池可在該硫化鑛辞層上包含 -硫化錦鋅層及一碲化鑛層,其中該硫化錫鋅層具有增加 的效率。 該硫化録鋅層的結晶性可高或幾乎非晶相。該硫化録 辞層可具有約20%至約桃的鋅。該光伏打電池可在硫化錫 曰/、碲化編層間包含一碌化锅鋅層。該碲化鑛辞層可具 有鋅含量約2%至約1G%。該蹄化鱗層可具有鋅含量在範 圍約概至約8%。該碲化錫辞層可具有鋅含量在範圍約5% 至約6%。該光伏打電池可包括一透明導電氧化物堆疊,其 中5玄硫化鎘辞層配置在該透明導電氧化物堆疊上。該光伏 201108452 打電池可包括第—基材,其中該透明導電氧化物堆疊 在第一基材上。該第—基材可包括玻璃,例如,_破璃。 該透明導電氧化物堆疊可在透明導電氧化物層包含— 緩衝層’其中該透明導電氧化物層配置在—或多層阻障声 上。《明導電氧化物層可包㈣酸録、氧化 該緩衝層可包括氧化鋅錫'氧化錫、氧化鋅或氧化辞;。° 該—或多層阻障層每層可包括氮切、摻雜_氮切、 氧化^、摻軸的氧切、換雜爾氮切、換雜碟的氮 化石夕、氧化-氮化石夕或氣 _ . Μ化錫。糾伙㈣池可在該碲化鑛 s匕<。_點,及在職部難上―後部支撐物。 在-個觀點t’該光伏打電池亦可包括—硫化錦層、 :在該硫⑽層上的含辞層及—在該含鋅層上的蹄 滑0
該含鋅層可包括碲化鋅、硫化鋅、碲化編辞或在蹄化 辞層上的碲⑽鋅層。料讀電池可包括-在基材上的 透明導電氧化物堆疊,其中該翻導電氧 Z 電氧化物層上的緩衝二=:及-在該透明導 電氧化物堆#上。’、中该硫化編層配置在該透明導 圖式簡單說明 第1圖為具有多層的光伏打裝置之圖式圖。 第2圖為具有多層的光伏打裝置之圖式圖。 【實施方式】 實施例之詳細說明 £ 201108452 參照第1圖,光伏打電池loo可包括一硫化鎘層lio。該 硫化鎘層110可沉積在基材120上。該基材120可包括玻璃, 例如,納妈玻璃。可在硫化録層110上沉積一含辞層。例如, 可在該硫化鎘層110上沉積一碲化鋅層130。亦可在硫化鎘 層110上沉積其它含鋅層,包括碲化編辞及硫化鋅。可在該 碲化辞層130上沉積一碲化錫辞層140。可在高溫(例如,高 於約380°C)下該沉積等層,以促進鋅擴散而形成硫化鎘 鋅。例如,可在約400°C或約420。(:下沉積該裝置層。可在 任何合適的溫度範圍内沉積該等層,包括例如約4〇〇。匚至約 800°C,約500°C至約70(TC或約550°C至約650。〇例如,可 在約550 C下沉積該等層。對碲化鎘辞層14〇來說,任何百 分比的鋅皆可實行。例如,約〇1%的鋅應該改良性能。雖 然在範圍約G至約0.3G(即,〇至約15%的鋅)内之任何組態將 可接文,但已証明dZnx(其中X在範圍約0.10至約〇 12内) 的組態特财益。應注意的是,對碲化鱗層來說,最理 想的辞百分比可依沉積細節(即,溫度曲線)而變化。可在碲 化鑛鋅層刚上或直接在前述之含辞層上沉積蹄化锡層 可在碲化鎘層15〇沉積前或後退火該多層結構。該退 火可在任何合適的條件下進行。例如,可於經選擇以控制 退火的外觀之氣體(例如,氮氣)存在下進行該退火。可在任 可。適的C力下進行退火,例如,在減壓下、在低真空中 =在約0.01巴斯卡(1()_4托耳)下^亦可在任何合適的溫度或 皿度圍下進仃退火,例如高於約3贼。可在約彻。。至 勺0〇 C約500 C至約·。c或約5贼至約⑽下退火該 201108452 多層結構。亦可退火該結構任何合適的時期,例如,約1 〇 至約25分鐘或約15至約20分鐘。 為了沉積上述討論的層,多種沉積技術可獲得,包括 例如,低壓化學氣相沉積、大氣壓化學氣相沉積、電漿促 進化學氣相沉積、熱化學氣相沉積、DC或AC濺鍍、旋壓沉 積及喷灑熱解。例如,可濺鍍硫化鎘及硫化辞層。碲化鎘 鋅、硫化鎘、碲化鎘及碲化鋅全部可使用蒸氣傳輸沉積來 沉積。 從在上述討論的組態中之層擴散一或多種化學物質可 導致來自第2圖的光伏打電池200產生。例如,來自碲化鋅 層130的辞可擴散進入硫化鎘層11〇中造成硫化鎘鋅形成。 可藉由控制硫化鎘至硫化鎘鋅之轉換來支配來自第1圖所 沉積的碲化鋅厚度。參照第2圖,光伏打電池200可包括硫 化鎘鋅層210。硫化鎘鋅層210可包括任何合適的辞量。測 試已顯示出任何大於零的鋅百分比可有益地增加穿透及帶 排列。含有辞百分比在範圍20%至約40%的組成物(即,範 圍從Cd0.6Zn〇.4S至Cd〇.2ZnQ.8S的組成物)已顯示出特別高的 效率。硫化鎘鋅層210可位於基材220上。該基材220可包括 玻璃’例如,鈉鈣玻璃。碲化鎘層230可位於硫化編鋅層11〇 上。在一種變化中,所產生的結構可包括一在硫化鎘辞與 碲化編間之蹄化鑛鋅。 可在製造線的不同沉積站處,以分別的沉積氣體供應 器及真空密封沉積搶(在每個站處,如所需要)沉積每層。該 基材可經由滾輪傳輸器從沉積站轉移至沉積站,直到沉積 201108452 全部想要的層。可在該上層上配置一上基材層以形成一層 狀結構及完成該光伏打電池。 在光伏打裝置的製造中,半導體層之沉積描述例如在 美國專利案號5,248,349、5,372,646、5,470,397、5,536,333、 5,945,163、6,037,241及6,444,043中,其每篇全文以參考方 式併入本文。該沉積可包括將蒸氣從來源傳輸至基材,或 在封閉系統中昇華固體。用來製造光生伏打電池的設備可 包括一傳輸器,例如含有滾輪的滾輪傳輸器。其它型式的 傳輸器可能。該傳輸器將基材傳輸至一系列一或多個用來 將材料層沉積在基材的曝露表面上之沉積站。傳輸器描述 在臨時美國申請案11/692,667中,其藉此以參考方式併入本 文。 可將該沉積艙加熱到達約380 °C至約700。(:的加工溫 度’例如該溫度範圍可從約45〇。(:至約550°C,約55(TC至約 650°C,約570°C至約600°C ’約60(TC至約640。(:,或任何其 它合適的範圍。該沉積艙包括一連接至沉積蒸氣供應器的 ’儿積为配器。該分配器可連接至多個用來沉積不同層的蒸 氣供應器’或該基材可移動通過多個及不同具有其自己的 蒸氣分配器及供應器之沉積站。該分配器可呈具有不同喷 嘴幾何形狀之噴灑噴嘴形式,以促進蒸氣供應器的均勻分 佈。 例如’該窗口層及吸收層可包括二元半導體,諸如 II-VI、III-V或IV族半導體,諸如例如,ZnO、ZnS、ZnSe '
ZnTe、CdO、CdS、CdSe、CdTe、MgO、MgS、MgSe、MgTe、 10 201108452
HgO、HgS、HgSe、HgTe、MnO、MnS、MnTe、AIN、A1P、
AlAs、AlSb、GaN、GaP、GaAs ' GaSb、InN、InP、InAs、
InSb、TIN、TIP、TIAs、TISb或其混合物。該窗口層及吸 收層的實施例為塗佈CdTe層之CdS層。上層可覆蓋該半導 體層。該上層可包括金屬,諸如例如,紹 '鉬、鉻、姑、 鎳、鈦、鎢或其合金。該上層亦可包括金屬氧化物或金屬 氮化物或其合金。 如上所述,該光伏打電池可包括一在該基材表面上的 透明導電層、一第一半導體層(該基材支撐該半導體層)及一 與該半導體層接觸的金屬層。 碌尤仇打1:池的底層可為透明 該透明導電層上及至少部分覆蓋其。下—沉積的層為第一 半導體層,其可提供作為窗口層及可較薄(以該^導電層 及覆蓋層之使用為基礎)。下—沉積的層為第二半導體層, 其提供作為吸收層。如需要的話,可遍及該製造方法於1 基材^沉積或其它方面配置其它層(諸如包含摻雜物的層^ 该底層可為透明導電層’及可例如為透 物,諸如錫酸録、氧化錫或摻賴的氧化錫 田 接將半導㈣_在透明導電氧化物層上=下直 擊光伏打裝置陳能及敎性之反應= 穩定性的覆蓋層材料(諸如二氧切、"有间化子 鈦、三氧化二蝴及其它類似的實體)可;顯減二= 裝置性能及穩定性上的衝擊。因為所使 :; 率’該覆蓋層™減少,,會發生與 201108452 流反向之電轉礙。該覆蓋層可藉由裝填在表面的不平整 中而減低透明導電氧化物層的表面粗糙度,其可輔助窗口 層之沉積及可允許該窗口層具有較薄喊面。減低的表面 粗縫度可幫助改良該窗口層之均勻性。包含在光生伏打電 池中的覆蓋層之其它優點可包括改良光學清晰度、改良能 帶隙的連續性、在連接處提供較好的場強度及提供較好的 裝置效率(如藉由開路電壓損耗測量)。覆蓋層描述例如在美 國專利公告20050257824中,其全文以參考方式併入本文。 该光伏打電池的底層可為透明導電層。該薄覆蓋層可 在該透明導電層上及至少部分覆蓋其。下—沉積的層為第 一半導體層,其可提供作為窗口層及可較薄(以該透明導電 層及覆蓋層的使用為基礎)。下一沉積的層為第二半導體 層,其提供作為吸收層。如需要的話,可遍及該製造方法 在基材上沉積或其它方面配置其它層(諸如包含摻雜物的 層)。 該第一半導體層可提供作為第二半導體層之窗口層。 該第一半導體層可比第二半導體層薄。第一半導體層較 薄,此可允許較短的入射光波長較大地穿透至第二半導體 層。 該第一半導體層可為II-VI ' III-V或IV族半導體,諸如 例如,ZnO、ZnS、ZnSe、ZnTe、CdO、CdS、CdSe、CdTe、 MgO、MgS、MgSe、MgTe、HgO、HgS、HgSe、HgTe、 MnO、MnS、MnTe、AIN、A1P、AlAs、AlSb、GaN、GaP、 GaAs、GaSb、InN、InP、InAs、InSb、TIN、TIP、TIAs、 12 201108452 TISb或其混合物或合金。其可為二元半導體,例如其可為 CdS。該第二半導體層可沉積到第一半導體層上。當該第一 半導體層提供作為窗口層時,該第二半導體可提供作為入 射光的吸收層。類似於第一半導體層,該第二半導體層亦 可為II-VI ' III-V或IV族半導體,諸如例如,ZnO、ZnS、 ZnSe、ZnTe、CdO、CdS、CdSe、CdTe、MgO、MgS、MgSe、 MgTe、HgO、HgS、HgSe、HgTe、MnO、MnS、MnTe、 AIN、A1P、AlAs、AlSb、GaN、GaP、GaAs、GaSb、InN、 InP、InAs、InSb、TIN、TIP、TIAs、TISb或其混合物。 該第二半導體層可沉積到第一半導體層上。覆蓋層可 提供以電及化學地隔離該透明導電層與第一半導體層,防 止其在高溫下發生反應(其會負面地衝擊性能及穩定性)。該 透明導電層可沉積在基材上。 使用於本文所討論的方法所製造之光伏打裝置/電池 可併入一或多個光伏打模組中。可將該等模組併入多種用 來產生電力的系統中。例如,可以光束照射該光伏打電池 以產生光電流。可收集該光電流及從直流電(DC)轉換成交 流電(AC),並分佈至電力柵極。可在電池處引導任何合適 波長的光以產生該光電流,包括例如大於4〇〇奈米或小於 700奈米(例如,紫外光)。產生自一個光伏打電池的光電流 可與產生自其它光生伏打電池的光電流結合。例如’該光 生伏打電池可為在光伏打陣列(於此可駕馭及分佈該聚集 的電流)中的一或多個光伏打模組之部分。 已藉由闡明及實施例提供上述描述的具體實例。應瞭
E 13 201108452 解’上述提供的實施例可在某些方面被改變及仍然保持在 申請專利範圍的範圍内。應瞭解,雖然本發明已經參考上 述較佳具體實例來描述,其它具體實例亦在申請專利範圍 的範圍内。 【圖式簡單說明】 第1圖為具有多層的光伏打裝置之圖式圖。 第2圖為具有多層的光伏打裝置之圖式圖。 【主要元件符號說明】 100…光伏打電池 110…硫化鎘層 120··.基材 130.··碲化鋅層 140···蹄化編辞層 150…蹄化録層 200…光伏打電池 210…硫化錦辞層 220…基材 230·.·碲化鎘層 14
Claims (1)
- 201108452 七、申請專利範圍: 1. 一種製造光伏打電池的方法,其包括: 將一硫化鎘層沉積在一透明導電氧化物堆疊上; 將一含辞層沉積在該硫化鎘層上;及 將一碌化偏層沉積在該含辞層上。 2. 如申請專利範圍第1項之方法,更包括形成一硫化鎘 辞,其中該形成包括退火一或多層。 3. 如申請專利範圍第1項之方法,其中一或多個該沉積步 驟係在溫度範圍約400°C至約800°C内進行。 4. 如申請專利範圍第3項之方法,其中一或多個該沉積步 驟係在溫度範圍約500°C至約700°C内進行。 5. 如申請專利範圍第4項之方法,其中一或多個該沉積步 驟係在溫度範圍約550°C至約650°C内進行。 6. 如申請專利範圍第5項之方法,其中一或多個該沉積步 驟係在約550°C下進行。 7. 如申請專利範圍第5項之方法,其中一或多個該沉積步 驟係在約600°C下進行。 8. 如申請專利範圍第1項之方法,其中一或多個該沉積步 驟包括傳輸一蒸氣。 9. 如申請專利範圍第1項之方法,更包括退火該硫化鎘層 及含辞層。 10. 如申請專利範圍第9項之方法,更包括退火該碲化鎘層。 11. 如申請專利範圍第9項之方法,其中該退火包括在溫度 範圍約400°C至約800°C内加熱該硫化鎘層及含辞層。 £ 15 201108452 12. 如申請專利範圍第11項之方法,其中該退火包括在溫度 範圍約5 00°C至約700°C内加熱該硫化鎘層及含鋅層。 13. 如申請專利範圍第12項之方法,其中該退火包括在溫度 範圍約5 5 0 °C至約6 5 0 °C内加熱該硫化鎘層及含鋅層。 14. 如申請專利範圍第13項之方法,其中該退火包括在約 550°C下加熱該硫化鎘層及含鋅層。 15. 如申請專利範圍第13項之方法,其中該退火包括在約 650°C下加熱該硫化鎘層及含鋅層。 16. 如申請專利範圍第1項之方法,其中該含鋅層包括碲化 鋅。 17. 如申請專利範圍第1項之方法,其中該含鋅層包括碲化 鑛鋅。 18. 如申請專利範圍第17項之方法,其中該碲化鎘辞具有鋅 含量約2%至約10%。 19. 如申請專利範圍第18項之方法,其中該碲化鎘辞具有鋅 含量約4%至約8%。 20. 如申請專利範圍第19項之方法,其中該碲化鎘鋅具有鋅 含量約5%至約6%。 21. 如申請專利範圍第17項之方法,其中一或多個該沉積步 驟控制在該硫化鎘層與碲化鎘辞間之交換反應。 22. 如申請專利範圍第1項之方法,其中該含辞層包括硫化 辞。 23. 如申請專利範圍第1項之方法,其中該含辞層包括一在 碲化鋅層上的碲化編辞層。 16 201108452 从如申請專利範圍第23項之方法,其中該碲化編辞層所包 含的鋅濃度少於該碲化鋅層。 仏如申請專利_第23項之方法,其中該碲化料層具有 鋅含量約2%至約10〇/〇。 26.如申請專概圍第25奴方法,其巾該碲倾鋅層具有 鋅含量約4%至約8%。 A如申料利範圍⑽項之方法,其巾該碲倾鋅層具有 鋅含置在範圍約5%至約6%。 28_如申請專利範圍第23項之方法,复 '、中—或多個該沉積步 驟控制在硫化鎘層與碲化鎘鋅層間之交換反應 29. 如申請專利範圍第丨項之方法,复' 〜 一中该透明導電氧化物 堆噓包括一在透明導電氧化物層 a日道p 胃上的緩衝層,其中該透 明導電乳化物層配置在一或多層阻障層上。 30. 如申請專利範圍第29項之方法, 曰 β 尺包括將該透明導電氧 化物堆豐沉積在第一基材上。 〜 ^申請專利細陳料,其__基材包括玻 32. 如申請專利範圍第31項之方法,复 璃。 、5亥玻璃包括納飼玻 33. 如申請專利範圍第29項之方法, 每層包含一襁Ατ ”〒该―或多層阻障層 母屬W 4自於由下列所組成 摻雜銘的氮化石夕、氧化石夕 氮化石夕、 34. 如申請專利範圍第29項之方法,其中該透明導電氧化物 17 £ 201108452 層包含一編及錫層。 其中該透明導電氧化物 其中該透明導電氧化物 其中該緩衝層包含一選 氧化辞錫、氧化錫、氧 35. 如申請專利範圍第29項之方法 層包含氧化錫。 36. 如申請專利範圍第29項之方法 層包含氧化辞。 37. 如申請專利範圍第29項之方法 自於由下列所組成之群的材料 化辞及氧化辞鎂。 38. 如申請專利範圍第29項之方法,更包括退火該透明導電 氧化物堆疊。 39. 如申請專利範圍第29項之方法,更包括將一後部觸點沉 積在該碎化錫層。 40. 如申請專利範圍第39項之方法,更包括將一後部支撐物 沉積在該後部觸點上。 41. 一種光伏打電池,其包含: 一硫化編辞層;及 一在該硫化鎘鋅層上的碲化鎘層,其中該硫化鎘鋅 層具有增加的效率。 42. 如申請專利範圍第41項之光伏打電池,其中該硫化鎘鋅 層的結晶性高。 43. 如申請專利範圍第41項之光伏打電池,其中該硫化鎘鋅 層的結晶性為幾乎非晶相。 44. 如申請專利範圍第41項之光伏打電池,其中該硫化鎘辞 層具有約20至約40%鋅。 18 201108452 45如申请專利範圍第41項之光伏打電池,更包拉^在5亥硫 化錄鋅層與碲化鎘層間之碲化鎘鋅層。 46_如申請專利範圍第45項之光伏打電池,其中該碲化鎘鋅 層具有鋅含量約2°/。至約10%。 7.如申叫專利範圍第46項之光伏打電池,其中該碲化鎘鋅 層具有鋅含量約4%至約8%。 範圍第47項之光伏打電池,其中該碑_ 層具有鋅含量在範圍約5%至約6%。 49.如申請專利範圍第41項之光伏打電池 _ ^ &匕含~透明導 電軋化物堆疊,其中該硫化鑛鋅層配置在該透 化物堆疊上。 子电乳 5〇·如申請專利範圍第49項之光伏打電池,更包含一 + 材,其中該透明導電氧化物堆疊配置在該第一 基 51.如申請專利範圍第5〇項之光伏打電池,其中^材上。 包括玻璃。 基材 其中該坡螭包括 52.如申請專利範圍第51項之光伏打電池 鈉辦玻璃。 53. 如申請專利範圍第49項之光伏打電池,复 乳物堆宜包含—在透明導電氧化物層上的_層1 中該透明導電氧化物層配置在一或多層阻障層上:- 54. 如申請專利範圍第53項之光伏打電池,其 氧化物層包含錫酸錫。 "~透明導電 55_如申請專利範圍第53項之光伏打電池, 氧化物層包含氧化錫。 …透明導電 S 19 201108452 甲堉寻利範圍第53項之氺本 氧化物層包含氧化辞。伙打電池,其中該透明導電 申請專利範㈣53項之光伏㈣池^ 卜選自於由下列所組成 氧錫衝:: 錫、氧化鋅及氧化鋅鎂。 减鋅錫、乳化 58·如申請專利範圍第53項之 阻障層每層包含 、也’其中該-或多層 化石夕、摻雜的材料:氮 雜硼的氮化矽、摻雜炒氧化石夕推雜紹的氧化矽、摻 錫。 摻㈣的氮切、氧化·氮切及氧化 59.如申請專利範圍第53項之光伏打電池 化鎘層上的後部觸點。 匕3—在該碲 6〇.如申請專利範圍第59項之光伏打電池 部觸點上的後部切物。 一在該後 61. 一種光伏打電池,其包含: —硫化鎘層; 一在該硫化鎘層上的含鋅層丨及 一在邊含鋅層上的碲化鎘層。 62::_第61項之光伏打電池’〜鋅層包 63:=利範圍第61項之光伏打電池’其中該含鋅層包 範圍第61項之光伏打電池,其中該含鋅層包 20 201108452 6 5.如申請專利範圍第61項之光伏打電池,其中該含鋅層包 含一在碲化鋅層上的碲化锡辞層。 66.如申請專利範圍第61項之光伏打電池,更包含一在基材 上的透明導電氧化物堆疊,其中該透明導電氧化物堆疊 包含一在一或多層阻障層上的透明導電氧化物層及一 在該透明導電氧化物層上的緩衝層,其中該硫化鎘層配 置在該透明導電氧化物堆疊上。 £ 21
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-
2010
- 2010-07-09 JP JP2012519755A patent/JP2012533178A/ja active Pending
- 2010-07-09 WO PCT/US2010/041500 patent/WO2011006050A1/en active Application Filing
- 2010-07-09 EP EP10797901A patent/EP2452370A4/en not_active Withdrawn
- 2010-07-09 IN IN357DEN2012 patent/IN2012DN00357A/en unknown
- 2010-07-09 MA MA34599A patent/MA33504B1/fr unknown
- 2010-07-09 TW TW099122686A patent/TW201108452A/zh unknown
- 2010-07-09 KR KR1020127003509A patent/KR20120052296A/ko not_active Application Discontinuation
- 2010-07-09 CN CN2010800404700A patent/CN102484170A/zh active Pending
- 2010-07-09 AU AU2010271339A patent/AU2010271339A1/en not_active Abandoned
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IN2012DN00357A (zh) | 2015-08-21 |
IL217463A0 (en) | 2012-02-29 |
ZA201200354B (en) | 2012-09-26 |
JP2012533178A (ja) | 2012-12-20 |
AU2010271339A1 (en) | 2012-02-16 |
MA33504B1 (fr) | 2012-08-01 |
KR20120052296A (ko) | 2012-05-23 |
EP2452370A4 (en) | 2013-01-02 |
AU2010271339A2 (en) | 2012-02-16 |
US20110005594A1 (en) | 2011-01-13 |
EP2452370A1 (en) | 2012-05-16 |
WO2011006050A1 (en) | 2011-01-13 |
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