IN2012DN05185A - - Google Patents

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Publication number
IN2012DN05185A
IN2012DN05185A IN5185DEN2012A IN2012DN05185A IN 2012DN05185 A IN2012DN05185 A IN 2012DN05185A IN 5185DEN2012 A IN5185DEN2012 A IN 5185DEN2012A IN 2012DN05185 A IN2012DN05185 A IN 2012DN05185A
Authority
IN
India
Application number
Other languages
English (en)
Inventor
Songwei Lu
Original Assignee
Ppg Ind Ohio Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ppg Ind Ohio Inc filed Critical Ppg Ind Ohio Inc
Publication of IN2012DN05185A publication Critical patent/IN2012DN05185A/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0216Coatings
    • H01L31/02161Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C03C17/3411Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
    • C03C17/3417Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials all coatings being oxide coatings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0224Electrodes
    • H01L31/022466Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0392Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
    • H01L31/03921Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including only elements of Group IV of the Periodic Table
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042PV modules or arrays of single PV cells
    • H01L31/0445PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884Manufacture of transparent electrodes, e.g. TCO, ITO
    • CCHEMISTRY; METALLURGY
    • C03GLASS; MINERAL OR SLAG WOOL
    • C03CCHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C2217/00Coatings on glass
    • C03C2217/90Other aspects of coatings
    • C03C2217/94Transparent conductive oxide layers [TCO] being part of a multilayer coating
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Laminated Bodies (AREA)
  • Surface Treatment Of Glass (AREA)
  • Photovoltaic Devices (AREA)
  • Surface Treatment Of Optical Elements (AREA)
  • Formation Of Insulating Films (AREA)
  • Non-Insulated Conductors (AREA)
IN5185DEN2012 2009-12-21 2012-06-12 IN2012DN05185A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/643,448 US20110146768A1 (en) 2009-12-21 2009-12-21 Silicon thin film solar cell having improved underlayer coating
PCT/US2010/059081 WO2011084297A2 (en) 2009-12-21 2010-12-06 Silicon thin film solar cell having improved underlayer coating

Publications (1)

Publication Number Publication Date
IN2012DN05185A true IN2012DN05185A (ja) 2015-10-23

Family

ID=44149392

Family Applications (1)

Application Number Title Priority Date Filing Date
IN5185DEN2012 IN2012DN05185A (ja) 2009-12-21 2012-06-12

Country Status (11)

Country Link
US (2) US20110146768A1 (ja)
EP (1) EP2517261B1 (ja)
JP (1) JP5524354B2 (ja)
KR (1) KR101457283B1 (ja)
CN (1) CN102804390B (ja)
BR (1) BR112012014163A2 (ja)
IN (1) IN2012DN05185A (ja)
MX (1) MX2012006820A (ja)
RU (1) RU2531752C2 (ja)
TW (1) TWI493733B (ja)
WO (1) WO2011084297A2 (ja)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110146768A1 (en) * 2009-12-21 2011-06-23 Ppg Industries Ohio, Inc. Silicon thin film solar cell having improved underlayer coating
BE1019690A3 (fr) * 2010-06-24 2012-10-02 Agc Glass Europe Vitrage isolant.
US8829930B2 (en) * 2011-02-01 2014-09-09 Ut-Battelle, Llc Rapid screening buffer layers in photovoltaics
BE1019881A3 (fr) * 2011-03-16 2013-02-05 Agc Glass Europe Vitrage isolant.
JP2014095098A (ja) * 2012-11-07 2014-05-22 Sumitomo Metal Mining Co Ltd 透明導電膜積層体及びその製造方法、並びに薄膜太陽電池及びその製造方法
WO2014164194A1 (en) * 2013-03-12 2014-10-09 Ppg Industries Ohio, Inc. High haze underlayer for solar cell
JP6548896B2 (ja) * 2014-12-26 2019-07-24 株式会社マテリアル・コンセプト 太陽電池モジュールおよびその製造方法
US10680123B2 (en) 2015-03-12 2020-06-09 Vitro Flat Glass Llc Article with transparent conductive oxide coating
WO2016181739A1 (ja) * 2015-05-11 2016-11-17 旭硝子株式会社 車両用の断熱ガラスユニット
EP3296277B1 (en) * 2015-05-11 2021-01-13 AGC Inc. Heat insulating glass unit for vehicle and manufacturing method thereof
CN106098816A (zh) * 2016-07-13 2016-11-09 盐城普兰特新能源有限公司 一种碲化镉薄膜太阳能电池及其制备方法
CN106158997B (zh) * 2016-10-09 2017-09-05 天津市职业大学 一种掺杂氧化锡透明导电薄膜的制备方法
CN106477914B (zh) * 2016-10-09 2018-10-30 天津市职业大学 一种复合透明导电薄膜玻璃的制备方法
CN106655995B (zh) * 2017-02-09 2019-03-12 河南弘大新材科技有限公司 自洁式光电转换太阳能瓦
WO2019043398A1 (en) * 2017-08-31 2019-03-07 Pilkington Group Limited COATED GLASS ARTICLE, MANUFACTURING METHOD THEREOF, AND PHOTOVOLTAIC CELL MADE THEREWITH
US11485678B2 (en) 2017-08-31 2022-11-01 Pilkington Group Limited Chemical vapor deposition process for forming a silicon oxide coating
TWM587826U (zh) 2019-08-15 2019-12-11 凌巨科技股份有限公司 薄膜太陽能電池
CN110774792B (zh) * 2019-09-29 2021-10-01 浙江天浩数码科技有限公司 一种热转印智能打码混合基碳带及其制备方法
WO2024073002A1 (en) * 2022-09-28 2024-04-04 nexTC Corporation Applying a transparent conductive film to fluorine-doped tin oxide

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US4440822A (en) * 1977-04-04 1984-04-03 Gordon Roy G Non-iridescent glass structures
US4206252A (en) * 1977-04-04 1980-06-03 Gordon Roy G Deposition method for coating glass and the like
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US4746347A (en) * 1987-01-02 1988-05-24 Ppg Industries, Inc. Patterned float glass method
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US20110146768A1 (en) * 2009-12-21 2011-06-23 Ppg Industries Ohio, Inc. Silicon thin film solar cell having improved underlayer coating

Also Published As

Publication number Publication date
WO2011084297A3 (en) 2012-06-07
RU2012131143A (ru) 2014-01-27
US20130333752A1 (en) 2013-12-19
TWI493733B (zh) 2015-07-21
TW201143112A (en) 2011-12-01
WO2011084297A2 (en) 2011-07-14
JP5524354B2 (ja) 2014-06-18
EP2517261A2 (en) 2012-10-31
JP2013515374A (ja) 2013-05-02
CN102804390B (zh) 2016-08-31
EP2517261B1 (en) 2018-08-15
BR112012014163A2 (pt) 2016-05-17
CN102804390A (zh) 2012-11-28
RU2531752C2 (ru) 2014-10-27
US20110146768A1 (en) 2011-06-23
KR101457283B1 (ko) 2014-11-03
KR20120096098A (ko) 2012-08-29
MX2012006820A (es) 2012-07-23

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