JP2013511144A5 - - Google Patents

Download PDF

Info

Publication number
JP2013511144A5
JP2013511144A5 JP2012538454A JP2012538454A JP2013511144A5 JP 2013511144 A5 JP2013511144 A5 JP 2013511144A5 JP 2012538454 A JP2012538454 A JP 2012538454A JP 2012538454 A JP2012538454 A JP 2012538454A JP 2013511144 A5 JP2013511144 A5 JP 2013511144A5
Authority
JP
Japan
Prior art keywords
cmp composition
cmp
particles
polymer
inorganic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2012538454A
Other languages
English (en)
Japanese (ja)
Other versions
JP6005516B2 (ja
JP2013511144A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/IB2010/055101 external-priority patent/WO2011058503A1/en
Publication of JP2013511144A publication Critical patent/JP2013511144A/ja
Publication of JP2013511144A5 publication Critical patent/JP2013511144A5/ja
Application granted granted Critical
Publication of JP6005516B2 publication Critical patent/JP6005516B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2012538454A 2009-11-13 2010-11-10 無機粒子及びポリマー粒子を含む化学的機械研磨(cmp)組成物 Expired - Fee Related JP6005516B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US26087309P 2009-11-13 2009-11-13
US61/260,873 2009-11-13
PCT/IB2010/055101 WO2011058503A1 (en) 2009-11-13 2010-11-10 A chemical mechanical polishing (cmp) composition comprising inorganic particles and polymer particles

Publications (3)

Publication Number Publication Date
JP2013511144A JP2013511144A (ja) 2013-03-28
JP2013511144A5 true JP2013511144A5 (OSRAM) 2016-01-28
JP6005516B2 JP6005516B2 (ja) 2016-10-12

Family

ID=43991260

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012538454A Expired - Fee Related JP6005516B2 (ja) 2009-11-13 2010-11-10 無機粒子及びポリマー粒子を含む化学的機械研磨(cmp)組成物

Country Status (11)

Country Link
US (1) US9255214B2 (OSRAM)
EP (1) EP2499210B1 (OSRAM)
JP (1) JP6005516B2 (OSRAM)
KR (1) KR101809762B1 (OSRAM)
CN (1) CN102597142B (OSRAM)
IL (1) IL219144A (OSRAM)
MY (1) MY161863A (OSRAM)
RU (1) RU2579597C2 (OSRAM)
SG (1) SG10201407348PA (OSRAM)
TW (1) TWI500722B (OSRAM)
WO (1) WO2011058503A1 (OSRAM)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5574702B2 (ja) * 2009-12-28 2014-08-20 日揮触媒化成株式会社 有機粒子とシリカ粒子の凝集体からなる研磨用粒子分散液およびその製造方法
EP2539412A4 (en) 2010-02-24 2013-07-31 Basf Se AQUEOUS CLEANSING AGENT, AND PFROPOPOPOLYMERS AND THEIR USE IN A METHOD OF CLEANING PATENTED AND UNSTRUCTURED METAL SURFACES
CN103249789B (zh) 2010-10-07 2016-01-13 巴斯夫欧洲公司 含水抛光组合物及化学机械抛光具有图案化或未图案化低k电介质层的基材的方法
WO2012077063A1 (en) 2010-12-10 2012-06-14 Basf Se Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films
US9487674B2 (en) 2011-09-07 2016-11-08 Basf Se Chemical mechanical polishing (CMP) composition comprising a glycoside
BR112014011321A8 (pt) 2011-11-10 2018-12-18 Basf Se aditivo de agente de deslizamento de revestimento de papel, processo para a preparação de um agente de deslizamento de papel, composição de revestimento de papel, e, papel ou papelão
EP2682441A1 (en) * 2012-07-06 2014-01-08 Basf Se A chemical mechanical polishing (CMP) composition comprising a non-ionic surfactant and an aromatic compound comprising at least one acid group
US9340706B2 (en) 2013-10-10 2016-05-17 Cabot Microelectronics Corporation Mixed abrasive polishing compositions
US10946494B2 (en) 2015-03-10 2021-03-16 Showa Denko Materials Co., Ltd. Polishing agent, stock solution for polishing agent, and polishing method
KR20170030143A (ko) * 2015-09-08 2017-03-17 삼성에스디아이 주식회사 구리 연마용 cmp 슬러리 조성물 및 이를 이용한 연마 방법
KR102524807B1 (ko) 2016-11-04 2023-04-25 삼성전자주식회사 반도체 소자의 제조 방법
KR102782008B1 (ko) * 2019-12-06 2025-03-18 주식회사 케이씨텍 고단차 연마용 슬러리 조성물

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4954142A (en) 1989-03-07 1990-09-04 International Business Machines Corporation Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor
US6258137B1 (en) * 1992-02-05 2001-07-10 Saint-Gobain Industrial Ceramics, Inc. CMP products
KR100775228B1 (ko) * 1996-09-30 2007-11-12 히다치 가세고교 가부시끼가이샤 산화세륨 연마제 및 기판의 연마법
DE19719503C2 (de) 1997-05-07 2002-05-02 Wolters Peter Werkzeugmasch Vorrichtung zum chemisch-mechanischen Polieren von Oberflächen von Halbleiterwafern und Verfahren zum Betrieb der Vorrichtung
DE19755975A1 (de) 1997-12-16 1999-06-17 Wolters Peter Werkzeugmasch Halter für flache Werkstücke, insbesondere Halbleiterwafer
US6740590B1 (en) 1999-03-18 2004-05-25 Kabushiki Kaisha Toshiba Aqueous dispersion, aqueous dispersion for chemical mechanical polishing used for manufacture of semiconductor devices, method for manufacture of semiconductor devices, and method for formation of embedded writing
KR20020035826A (ko) * 1999-07-03 2002-05-15 갤반 마틴 금속용의 개선된 화학기계적 연마 슬러리
JP4151179B2 (ja) * 1999-11-22 2008-09-17 Jsr株式会社 複合粒子の製造方法及びこの方法により製造される複合粒子並びに複合粒子を含有する化学機械研磨用水系分散体
US6582761B1 (en) 1999-11-22 2003-06-24 Jsr Corporation Method of production of composited particle, composited particle produced by this method and aqueous dispersion for chemical mechanical polishing containing this composited particle, and method of production of aqueous dispersion for chemical mechanical polishing
JP4123685B2 (ja) 2000-05-18 2008-07-23 Jsr株式会社 化学機械研磨用水系分散体
DE10062496B4 (de) 2000-12-14 2005-03-17 Peter Wolters Cmp - Systeme Gmbh & Co. Kg Halter für flache Werkstücke, insbesondere Halbleiterwafer
JP4187206B2 (ja) * 2002-10-04 2008-11-26 花王株式会社 研磨液組成物
US20040065021A1 (en) * 2002-10-04 2004-04-08 Yasuhiro Yoneda Polishing composition
US20040175942A1 (en) 2003-01-03 2004-09-09 Chang Song Y. Composition and method used for chemical mechanical planarization of metals
US7071105B2 (en) * 2003-02-03 2006-07-04 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric
JP2006041252A (ja) 2004-07-28 2006-02-09 Hitachi Chem Co Ltd Cmp研磨剤、その製造方法及び基板の研磨方法
US7207871B1 (en) 2005-10-06 2007-04-24 Applied Materials, Inc. Carrier head with multiple chambers
KR100832993B1 (ko) * 2006-04-14 2008-05-27 주식회사 엘지화학 Cmp 슬러리용 보조제
US8912273B2 (en) 2008-06-17 2014-12-16 Basf Se Process for the preparation of an aqueous polymer dispersion
WO2010037730A1 (en) 2008-10-03 2010-04-08 Basf Se Chemical mechanical polishing (cmp) polishing solution with enhanced performance
US8679980B2 (en) 2009-05-06 2014-03-25 Basf Se Aqueous metal polishing agent comprising a polymeric abrasiv containing pendant functional groups and its use in a CMP process
EP2427522B1 (en) 2009-05-06 2017-03-01 Basf Se An aqueous polishing agent comprising solid polymer particles and two complexing agents and its use in a process for polishing patterned and unstructured metal surfaces
WO2010128094A1 (en) 2009-05-08 2010-11-11 Basf Se Oxidizing particles based slurry for nobel metal including ruthenium chemical mechanical planarization
US20120077419A1 (en) 2009-06-05 2012-03-29 Basf Se Raspberry-type metal oxide nanostructures coated with ceo2 nanoparticles for chemical mechanical planarization (cmp)

Similar Documents

Publication Publication Date Title
JP2013511144A5 (OSRAM)
Abdullayev et al. Enlargement of halloysite clay nanotube lumen by selective etching of aluminum oxide
Wang et al. Chemical effect on the material removal rate in the CMP of silicon wafers
CN105236929B (zh) 具有杀菌功能的SiO2气凝胶及其制备方法
RU2012123720A (ru) Композиция для химико-механической полировки (хмп), содержащая неорганические частицы и полимерные частицы
CN103803556B (zh) 一种有机修饰的疏水纳米氧化硅空心球及其制备
JP2013040202A5 (OSRAM)
CN103285746B (zh) 一种用于去除水中溶解性气体的超疏水膜的制备方法
JP2014527298A5 (OSRAM)
TW200914372A (en) Silica particles and methods of making and using the same
MY171840A (en) Composition for polishing purposes,polishing method using same,and method for producing substrate
JP2016138278A5 (OSRAM)
JP2012501252A5 (OSRAM)
CN105802452A (zh) 一种石墨烯复合涂层、石墨烯复合涂料及其制备方法
CN106277162A (zh) 一种超疏水磁性PS/SiO2油水分离材料及其制备方法
MY170292A (en) Chemical mechanical polishing composition comprising non-ionic surfactant and an aromatic compound comprising at least one acid group
CN109529523A (zh) 分子筛核-介孔有机硅空心壳多级孔复合材料及其制备方法
JP2007324606A5 (OSRAM)
CN104559927A (zh) 一种含多孔二氧化硅磨料的抛光液及其制备方法
Manivannan et al. Role of abrasives in high selectivity STI CMP slurries
WO2014006526A3 (en) Chemical mechanical polishing composition comprising non-ionic surfactant and carbonate salt
US20120315764A1 (en) Method of polishing copper wiring surfaces in ultra large scale integrated circuits
CN101789418B (zh) 一种多孔超低介电常数材料薄膜及其制备方法
KR101465762B1 (ko) 폴리스티렌/실리카 복합체를 포함하는 연마재, 및 이의 제조 방법
Penta et al. Charge density and pH effects on polycation adsorption on poly-Si, SiO2, and Si3N4 films and impact on removal during chemical mechanical polishing