RU2579597C2 - Композиция для химико-механической полировки (хмп ), содержащая неорганические частицы и полимерные частицы - Google Patents

Композиция для химико-механической полировки (хмп ), содержащая неорганические частицы и полимерные частицы Download PDF

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RU2579597C2
RU2579597C2 RU2012123720/05A RU2012123720A RU2579597C2 RU 2579597 C2 RU2579597 C2 RU 2579597C2 RU 2012123720/05 A RU2012123720/05 A RU 2012123720/05A RU 2012123720 A RU2012123720 A RU 2012123720A RU 2579597 C2 RU2579597 C2 RU 2579597C2
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Prior art keywords
composition
polymer particles
cmp
particles
inorganic particles
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RU2012123720/05A
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English (en)
Russian (ru)
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RU2012123720A (ru
Inventor
Михаэль ЛАУТЕР
Виджай Иммануэль РАМАН
Южуо ЛИ
Шиям Сундар ВЕНКАТАРАМАН
Даниэль Кво-Хунг ШЕН
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Басф Се
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Publication of RU2012123720A publication Critical patent/RU2012123720A/ru
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
RU2012123720/05A 2009-11-13 2010-11-10 Композиция для химико-механической полировки (хмп ), содержащая неорганические частицы и полимерные частицы RU2579597C2 (ru)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US26087309P 2009-11-13 2009-11-13
US61/260,873 2009-11-13
PCT/IB2010/055101 WO2011058503A1 (en) 2009-11-13 2010-11-10 A chemical mechanical polishing (cmp) composition comprising inorganic particles and polymer particles

Publications (2)

Publication Number Publication Date
RU2012123720A RU2012123720A (ru) 2013-12-20
RU2579597C2 true RU2579597C2 (ru) 2016-04-10

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RU2012123720/05A RU2579597C2 (ru) 2009-11-13 2010-11-10 Композиция для химико-механической полировки (хмп ), содержащая неорганические частицы и полимерные частицы

Country Status (11)

Country Link
US (1) US9255214B2 (OSRAM)
EP (1) EP2499210B1 (OSRAM)
JP (1) JP6005516B2 (OSRAM)
KR (1) KR101809762B1 (OSRAM)
CN (1) CN102597142B (OSRAM)
IL (1) IL219144A (OSRAM)
MY (1) MY161863A (OSRAM)
RU (1) RU2579597C2 (OSRAM)
SG (1) SG10201407348PA (OSRAM)
TW (1) TWI500722B (OSRAM)
WO (1) WO2011058503A1 (OSRAM)

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JP5574702B2 (ja) * 2009-12-28 2014-08-20 日揮触媒化成株式会社 有機粒子とシリカ粒子の凝集体からなる研磨用粒子分散液およびその製造方法
EP2539412A4 (en) 2010-02-24 2013-07-31 Basf Se AQUEOUS CLEANSING AGENT, AND PFROPOPOPOLYMERS AND THEIR USE IN A METHOD OF CLEANING PATENTED AND UNSTRUCTURED METAL SURFACES
US9070632B2 (en) 2010-10-07 2015-06-30 Basf Se Aqueous polishing composition and process for chemically mechanically polishing substrates having patterned or unpatterned low-k dielectric layers
SG190334A1 (en) 2010-12-10 2013-06-28 Basf Se Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films
CN103764775B (zh) 2011-09-07 2016-05-18 巴斯夫欧洲公司 包含苷的化学机械抛光(cmp)组合物
WO2013068375A1 (en) 2011-11-10 2013-05-16 Basf Se Paper coating slip additive comprising acid monomer, associative monomer and nonionic monomer
EP2682441A1 (en) * 2012-07-06 2014-01-08 Basf Se A chemical mechanical polishing (CMP) composition comprising a non-ionic surfactant and an aromatic compound comprising at least one acid group
US9340706B2 (en) 2013-10-10 2016-05-17 Cabot Microelectronics Corporation Mixed abrasive polishing compositions
KR102583709B1 (ko) * 2015-03-10 2023-09-26 가부시끼가이샤 레조낙 연마제, 연마제용 저장액 및 연마 방법
KR20170030143A (ko) 2015-09-08 2017-03-17 삼성에스디아이 주식회사 구리 연마용 cmp 슬러리 조성물 및 이를 이용한 연마 방법
KR102524807B1 (ko) 2016-11-04 2023-04-25 삼성전자주식회사 반도체 소자의 제조 방법
KR102782008B1 (ko) * 2019-12-06 2025-03-18 주식회사 케이씨텍 고단차 연마용 슬러리 조성물

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US6447373B1 (en) * 1999-07-03 2002-09-10 Rodel Holdings Inc. Chemical mechanical polishing slurries for metal
US6559056B2 (en) * 2000-05-18 2003-05-06 Jsr Corporation Aqueous dispersion for chemical mechanical polishing
US20040152309A1 (en) * 2003-02-03 2004-08-05 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric
RU2235747C2 (ru) * 1999-10-06 2004-09-10 Сент-Гобэн Керамикс Энд Пластикс, Инк. Способ химико-механической планаризации и полученные с его помощью изделия

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RU2178599C2 (ru) * 1996-09-30 2002-01-20 Хитачи Кемикал Кампани, Лтд. Абразив из оксида церия и способ полирования подложек
US6447373B1 (en) * 1999-07-03 2002-09-10 Rodel Holdings Inc. Chemical mechanical polishing slurries for metal
RU2235747C2 (ru) * 1999-10-06 2004-09-10 Сент-Гобэн Керамикс Энд Пластикс, Инк. Способ химико-механической планаризации и полученные с его помощью изделия
US6559056B2 (en) * 2000-05-18 2003-05-06 Jsr Corporation Aqueous dispersion for chemical mechanical polishing
US20040152309A1 (en) * 2003-02-03 2004-08-05 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric

Also Published As

Publication number Publication date
CN102597142B (zh) 2014-09-17
TW201122068A (en) 2011-07-01
CN102597142A (zh) 2012-07-18
TWI500722B (zh) 2015-09-21
US9255214B2 (en) 2016-02-09
WO2011058503A1 (en) 2011-05-19
IL219144A (en) 2016-07-31
KR101809762B1 (ko) 2017-12-15
US20120208344A1 (en) 2012-08-16
RU2012123720A (ru) 2013-12-20
MY161863A (en) 2017-05-15
EP2499210B1 (en) 2017-01-11
JP2013511144A (ja) 2013-03-28
KR20120101044A (ko) 2012-09-12
SG10201407348PA (en) 2015-01-29
EP2499210A4 (en) 2015-04-29
IL219144A0 (en) 2012-06-28
JP6005516B2 (ja) 2016-10-12
EP2499210A1 (en) 2012-09-19

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Effective date: 20191111