KR101809762B1 - 무기 입자 및 중합체 입자를 포함하는 화학적 기계적 연마 (ｃｍｐ) 조성물 - Google Patents

무기 입자 및 중합체 입자를 포함하는 화학적 기계적 연마 (ｃｍｐ) 조성물 Download PDF

Info

Publication number
KR101809762B1
KR101809762B1 KR1020127014055A KR20127014055A KR101809762B1 KR 101809762 B1 KR101809762 B1 KR 101809762B1 KR 1020127014055 A KR1020127014055 A KR 1020127014055A KR 20127014055 A KR20127014055 A KR 20127014055A KR 101809762 B1 KR101809762 B1 KR 101809762B1
Authority
KR
South Korea
Prior art keywords
cmp
cmp composition
particles
polymer particles
polymer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020127014055A
Other languages
English (en)
Korean (ko)
Other versions
KR20120101044A (ko
Inventor
미카엘 라우터
비제이 임마누엘 라만
유주오 리
샤이암 선다르 벤카타라만
다니엘 쿠-훙 쉔
Original Assignee
바스프 에스이
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 바스프 에스이 filed Critical 바스프 에스이
Publication of KR20120101044A publication Critical patent/KR20120101044A/ko
Application granted granted Critical
Publication of KR101809762B1 publication Critical patent/KR101809762B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
KR1020127014055A 2009-11-13 2010-11-10 무기 입자 및 중합체 입자를 포함하는 화학적 기계적 연마 (ｃｍｐ) 조성물 Expired - Fee Related KR101809762B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US26087309P 2009-11-13 2009-11-13
US61/260,873 2009-11-13
PCT/IB2010/055101 WO2011058503A1 (en) 2009-11-13 2010-11-10 A chemical mechanical polishing (cmp) composition comprising inorganic particles and polymer particles

Publications (2)

Publication Number Publication Date
KR20120101044A KR20120101044A (ko) 2012-09-12
KR101809762B1 true KR101809762B1 (ko) 2017-12-15

Family

ID=43991260

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020127014055A Expired - Fee Related KR101809762B1 (ko) 2009-11-13 2010-11-10 무기 입자 및 중합체 입자를 포함하는 화학적 기계적 연마 (ｃｍｐ) 조성물

Country Status (11)

Country Link
US (1) US9255214B2 (OSRAM)
EP (1) EP2499210B1 (OSRAM)
JP (1) JP6005516B2 (OSRAM)
KR (1) KR101809762B1 (OSRAM)
CN (1) CN102597142B (OSRAM)
IL (1) IL219144A (OSRAM)
MY (1) MY161863A (OSRAM)
RU (1) RU2579597C2 (OSRAM)
SG (1) SG10201407348PA (OSRAM)
TW (1) TWI500722B (OSRAM)
WO (1) WO2011058503A1 (OSRAM)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5574702B2 (ja) * 2009-12-28 2014-08-20 日揮触媒化成株式会社 有機粒子とシリカ粒子の凝集体からなる研磨用粒子分散液およびその製造方法
EP2539412A4 (en) 2010-02-24 2013-07-31 Basf Se AQUEOUS CLEANSING AGENT, AND PFROPOPOPOLYMERS AND THEIR USE IN A METHOD OF CLEANING PATENTED AND UNSTRUCTURED METAL SURFACES
US9070632B2 (en) 2010-10-07 2015-06-30 Basf Se Aqueous polishing composition and process for chemically mechanically polishing substrates having patterned or unpatterned low-k dielectric layers
SG190334A1 (en) 2010-12-10 2013-06-28 Basf Se Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films
CN103764775B (zh) 2011-09-07 2016-05-18 巴斯夫欧洲公司 包含苷的化学机械抛光(cmp)组合物
WO2013068375A1 (en) 2011-11-10 2013-05-16 Basf Se Paper coating slip additive comprising acid monomer, associative monomer and nonionic monomer
EP2682441A1 (en) * 2012-07-06 2014-01-08 Basf Se A chemical mechanical polishing (CMP) composition comprising a non-ionic surfactant and an aromatic compound comprising at least one acid group
US9340706B2 (en) 2013-10-10 2016-05-17 Cabot Microelectronics Corporation Mixed abrasive polishing compositions
KR102583709B1 (ko) * 2015-03-10 2023-09-26 가부시끼가이샤 레조낙 연마제, 연마제용 저장액 및 연마 방법
KR20170030143A (ko) 2015-09-08 2017-03-17 삼성에스디아이 주식회사 구리 연마용 cmp 슬러리 조성물 및 이를 이용한 연마 방법
KR102524807B1 (ko) 2016-11-04 2023-04-25 삼성전자주식회사 반도체 소자의 제조 방법
KR102782008B1 (ko) * 2019-12-06 2025-03-18 주식회사 케이씨텍 고단차 연마용 슬러리 조성물

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006041252A (ja) 2004-07-28 2006-02-09 Hitachi Chem Co Ltd Ｃｍｐ研磨剤、その製造方法及び基板の研磨方法

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4954142A (en) 1989-03-07 1990-09-04 International Business Machines Corporation Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor
US6258137B1 (en) * 1992-02-05 2001-07-10 Saint-Gobain Industrial Ceramics, Inc. CMP products
CN1245471C (zh) * 1996-09-30 2006-03-15 日立化成工业株式会社 氧化铈研磨剂以及基板的研磨方法
DE19719503C2 (de) 1997-05-07 2002-05-02 Wolters Peter Werkzeugmasch Vorrichtung zum chemisch-mechanischen Polieren von Oberflächen von Halbleiterwafern und Verfahren zum Betrieb der Vorrichtung
DE19755975A1 (de) 1997-12-16 1999-06-17 Wolters Peter Werkzeugmasch Halter für flache Werkstücke, insbesondere Halbleiterwafer
TWI267549B (en) 1999-03-18 2006-12-01 Toshiba Corp Aqueous dispersion, aqueous dispersion for chemical mechanical polishing used for manufacture of semiconductor devices, method for manufacture of semiconductor devices, and method for formation of embedded wiring
JP2003503862A (ja) * 1999-07-03 2003-01-28 ロデール ホールディングス インコーポレイテッド 改良された金属用化学機械研磨スラリー
JP4151179B2 (ja) * 1999-11-22 2008-09-17 Ｊｓｒ株式会社 複合粒子の製造方法及びこの方法により製造される複合粒子並びに複合粒子を含有する化学機械研磨用水系分散体
EP1104778B1 (en) * 1999-11-22 2004-11-03 JSR Corporation Method of production of composited particle for chemical mechanical polishing
JP4123685B2 (ja) * 2000-05-18 2008-07-23 Ｊｓｒ株式会社 化学機械研磨用水系分散体
DE10062496B4 (de) 2000-12-14 2005-03-17 Peter Wolters Cmp - Systeme Gmbh & Co. Kg Halter für flache Werkstücke, insbesondere Halbleiterwafer
JP4187206B2 (ja) * 2002-10-04 2008-11-26 花王株式会社 研磨液組成物
US20040065021A1 (en) * 2002-10-04 2004-04-08 Yasuhiro Yoneda Polishing composition
US20040175942A1 (en) 2003-01-03 2004-09-09 Chang Song Y. Composition and method used for chemical mechanical planarization of metals
US7071105B2 (en) * 2003-02-03 2006-07-04 Cabot Microelectronics Corporation Method of polishing a silicon-containing dielectric
US7207871B1 (en) 2005-10-06 2007-04-24 Applied Materials, Inc. Carrier head with multiple chambers
KR100832993B1 (ko) 2006-04-14 2008-05-27 주식회사 엘지화학 Ｃｍｐ 슬러리용 보조제
WO2009153162A1 (de) 2008-06-17 2009-12-23 Basf Se Verfahren zur herstellung einer wässrigen polymerisatdispersion
WO2010037730A1 (en) 2008-10-03 2010-04-08 Basf Se Chemical mechanical polishing (cmp) polishing solution with enhanced performance
WO2010127937A1 (en) 2009-05-06 2010-11-11 Basf Se An aqueous metal polishing agent comprising a polymeric abrasiv containing pendant functional groups and its use in a cmp process
KR101722280B1 (ko) 2009-05-06 2017-03-31 바스프 에스이 고체 중합체 입자 및 2종의 착화제를 포함하는 수성 연마제 및 패턴화 및 비구조화 금속 표면을 연마하는 방법에 있어서의 그 용도
WO2010128094A1 (en) 2009-05-08 2010-11-11 Basf Se Oxidizing particles based slurry for nobel metal including ruthenium chemical mechanical planarization
US20120077419A1 (en) 2009-06-05 2012-03-29 Basf Se Raspberry-type metal oxide nanostructures coated with ceo2 nanoparticles for chemical mechanical planarization (cmp)

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006041252A (ja) 2004-07-28 2006-02-09 Hitachi Chem Co Ltd Ｃｍｐ研磨剤、その製造方法及び基板の研磨方法

Also Published As

Publication number Publication date
CN102597142B (zh) 2014-09-17
TW201122068A (en) 2011-07-01
CN102597142A (zh) 2012-07-18
TWI500722B (zh) 2015-09-21
US9255214B2 (en) 2016-02-09
WO2011058503A1 (en) 2011-05-19
IL219144A (en) 2016-07-31
US20120208344A1 (en) 2012-08-16
RU2579597C2 (ru) 2016-04-10
RU2012123720A (ru) 2013-12-20
MY161863A (en) 2017-05-15
EP2499210B1 (en) 2017-01-11
JP2013511144A (ja) 2013-03-28
KR20120101044A (ko) 2012-09-12
SG10201407348PA (en) 2015-01-29
EP2499210A4 (en) 2015-04-29
IL219144A0 (en) 2012-06-28
JP6005516B2 (ja) 2016-10-12
EP2499210A1 (en) 2012-09-19

Similar Documents

Publication Publication Date Title
KR101809762B1 (ko) 무기 입자 및 중합체 입자를 포함하는 화학적 기계적 연마 (ｃｍｐ) 조성물
US7838482B2 (en) CMP polishing compound and polishing method
CN101560373B (zh) 氧化硅用研磨剂、添加液以及研磨方法
CN104081501B (zh) 包含蛋白质的化学机械抛光(cmp)组合物
JP6035346B2 (ja) 半導体装置の製造方法及びｃｍｐ組成物の使用方法
US9005472B2 (en) Aqueous polishing agent and graft copolymers and their use in a process for polishing patterned and unstructured metal surfaces
KR100539983B1 (ko) Ｃｍｐ용 세리아 연마제 및 그 제조 방법
US9416298B2 (en) Process for the manufacture of semiconductor devices comprising the chemical mechanical polishing (CMP) of III-V material in the presence of a CMP composition comprising a specific non-ionic surfactant
EP2847785A1 (en) Process for manufacture of semiconductor devices
KR20160018575A (ko) 화학 기계적 연마 (cmp) 조성물
US8927429B2 (en) Chemical mechanical polishing (CMP) composition comprising a specific heteropolyacid
KR20090057249A (ko) Ｃｍｐ 연마제, ｃｍｐ 연마제용 첨가액 및 이들을 이용한 기판의 연마방법
KR20030050026A (ko) 화학기계적 연마용 슬러리, 이들 슬러리의 제조방법 및이들 슬러리를 이용한 화학기계적 연마방법
EP2666833A1 (en) A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing (cmp) of iii-v material in the presence of a cmp composition comprising a specific non-ionic surfactant
KR20070075700A (ko) Ｃｍｐ용 세라믹 슬러리 조성물

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20201212

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20201212