JP2013511128A5 - - Google Patents
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- Publication number
- JP2013511128A5 JP2013511128A5 JP2012538809A JP2012538809A JP2013511128A5 JP 2013511128 A5 JP2013511128 A5 JP 2013511128A5 JP 2012538809 A JP2012538809 A JP 2012538809A JP 2012538809 A JP2012538809 A JP 2012538809A JP 2013511128 A5 JP2013511128 A5 JP 2013511128A5
- Authority
- JP
- Japan
- Prior art keywords
- plasma
- residue
- ion
- gas
- predetermined condition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004140 cleaning Methods 0.000 claims description 9
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 2
- 239000010980 sapphire Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 claims 23
- 239000007789 gas Substances 0.000 claims 20
- 150000002500 ions Chemical class 0.000 claims 14
- 238000010884 ion-beam technique Methods 0.000 claims 8
- 238000005468 ion implantation Methods 0.000 claims 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 2
- 229910052796 boron Inorganic materials 0.000 claims 2
- 229910052799 carbon Inorganic materials 0.000 claims 2
- 150000001875 compounds Chemical class 0.000 claims 2
- 239000002019 doping agent Substances 0.000 claims 2
- 238000004949 mass spectrometry Methods 0.000 claims 2
- 230000003287 optical effect Effects 0.000 claims 2
- 229910052760 oxygen Inorganic materials 0.000 claims 2
- 239000001301 oxygen Substances 0.000 claims 2
- 238000004611 spectroscopical analysis Methods 0.000 claims 2
- 239000004215 Carbon black (E152) Substances 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 238000009529 body temperature measurement Methods 0.000 claims 1
- 238000000605 extraction Methods 0.000 claims 1
- 239000012530 fluid Substances 0.000 claims 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims 1
- 229930195733 hydrocarbon Natural products 0.000 claims 1
- 150000002430 hydrocarbons Chemical class 0.000 claims 1
- 230000000116 mitigating effect Effects 0.000 claims 1
- 230000006698 induction Effects 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/616,662 | 2009-11-11 | ||
| US12/616,662 US20110108058A1 (en) | 2009-11-11 | 2009-11-11 | Method and apparatus for cleaning residue from an ion source component |
| PCT/US2010/002969 WO2011059504A2 (en) | 2009-11-11 | 2010-11-12 | Method and apparatus for cleaning residue from an ion source component |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013511128A JP2013511128A (ja) | 2013-03-28 |
| JP2013511128A5 true JP2013511128A5 (enExample) | 2015-07-02 |
| JP5827235B2 JP5827235B2 (ja) | 2015-12-02 |
Family
ID=43735816
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012538809A Expired - Fee Related JP5827235B2 (ja) | 2009-11-11 | 2010-11-12 | 残留物を清浄する方法および装置 |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US20110108058A1 (enExample) |
| EP (1) | EP2499653A2 (enExample) |
| JP (1) | JP5827235B2 (enExample) |
| KR (1) | KR101741405B1 (enExample) |
| CN (1) | CN102612731B (enExample) |
| TW (1) | TWI500064B (enExample) |
| WO (1) | WO2011059504A2 (enExample) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120235058A1 (en) * | 2010-09-15 | 2012-09-20 | Ashwini Sinha | Method for extending lifetime of an ion source |
| US9653327B2 (en) * | 2011-05-12 | 2017-05-16 | Applied Materials, Inc. | Methods of removing a material layer from a substrate using water vapor treatment |
| RU2522662C2 (ru) * | 2011-08-03 | 2014-07-20 | Федеральное государственное бюджетное учреждение "Государственный научный центр Российской Федерации - Институт Теоретической и Экспериментальной Физики" (ФГБУ "ГНЦ РФ ИТЭФ") | Способ нерпрерываемого производства пучка ионов карборана с постоянной самоочисткой ионного источника и компонент системы экстракции ионного имплантатора |
| US20130250293A1 (en) * | 2012-03-20 | 2013-09-26 | Fei Company | Method and Apparatus for Actively Monitoring an Inductively-Coupled Plasma Ion Source using an Optical Spectrometer |
| US9142392B2 (en) * | 2013-04-29 | 2015-09-22 | Varian Semiconductor Equipment Associates, Inc. | Self-cleaning radio frequency plasma source |
| US9006690B2 (en) * | 2013-05-03 | 2015-04-14 | Axcelis Technologies, Inc. | Extraction electrode assembly voltage modulation in an ion implantation system |
| JP6461186B2 (ja) * | 2014-03-11 | 2019-01-30 | レッド ヒル バイオファーマ リミテッドRedHill Biopharma Ltd. | 悪心、嘔吐または下痢の症状を処置するためのオンダンセトロン徐放固形製剤 |
| JP6439620B2 (ja) * | 2015-07-28 | 2018-12-19 | 株式会社ニューフレアテクノロジー | 電子源のクリーニング方法及び電子ビーム描画装置 |
| US10062548B2 (en) * | 2015-08-31 | 2018-08-28 | Varian Semiconductor Equipment Associates, Inc. | Gas injection system for ion beam device |
| US10141161B2 (en) | 2016-09-12 | 2018-11-27 | Varian Semiconductor Equipment Associates, Inc. | Angle control for radicals and reactive neutral ion beams |
| US10161034B2 (en) | 2017-04-21 | 2018-12-25 | Lam Research Corporation | Rapid chamber clean using concurrent in-situ and remote plasma sources |
| US10676370B2 (en) * | 2017-06-05 | 2020-06-09 | Axcelis Technologies, Inc. | Hydrogen co-gas when using aluminum iodide as an ion source material |
| US10580632B2 (en) * | 2017-12-18 | 2020-03-03 | Agilent Technologies, Inc. | In-situ conditioning in mass spectrometry systems |
| CN111069188B (zh) * | 2018-10-18 | 2021-09-14 | 汉辰科技股份有限公司 | 离子布植机内部的氟化表面的清理 |
| CN109447013B (zh) * | 2018-11-06 | 2022-02-15 | 重庆工程职业技术学院 | 计算机用户身份识别设备 |
| JP7385809B2 (ja) * | 2019-09-05 | 2023-11-24 | 日新イオン機器株式会社 | イオンビーム照射装置のクリーニング方法 |
| US20250046586A1 (en) * | 2023-07-31 | 2025-02-06 | Veeco Instruments Inc. | Plasma vessel cleaning for ion beam system |
Family Cites Families (40)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2631258B1 (fr) * | 1988-05-10 | 1991-04-05 | Prestations Services Sps | Procede de nettoyage en surface par plasma differe |
| US5200023A (en) * | 1991-08-30 | 1993-04-06 | International Business Machines Corp. | Infrared thermographic method and apparatus for etch process monitoring and control |
| JPH06176724A (ja) * | 1992-01-23 | 1994-06-24 | Tokyo Electron Ltd | イオン源装置 |
| JP2618817B2 (ja) * | 1993-07-09 | 1997-06-11 | 岩谷産業株式会社 | 半導体製造装置でのノンプラズマクリーニング方法 |
| JPH0786242A (ja) * | 1993-09-10 | 1995-03-31 | Fujitsu Ltd | 半導体装置の製造方法 |
| US5554854A (en) * | 1995-07-17 | 1996-09-10 | Eaton Corporation | In situ removal of contaminants from the interior surfaces of an ion beam implanter |
| US5661308A (en) * | 1996-05-30 | 1997-08-26 | Eaton Corporation | Method and apparatus for ion formation in an ion implanter |
| US5812403A (en) * | 1996-11-13 | 1998-09-22 | Applied Materials, Inc. | Methods and apparatus for cleaning surfaces in a substrate processing system |
| US5814823A (en) * | 1997-07-12 | 1998-09-29 | Eaton Corporation | System and method for setecing neutral particles in an ion bean |
| US6135128A (en) * | 1998-03-27 | 2000-10-24 | Eaton Corporation | Method for in-process cleaning of an ion source |
| US6182603B1 (en) * | 1998-07-13 | 2001-02-06 | Applied Komatsu Technology, Inc. | Surface-treated shower head for use in a substrate processing chamber |
| US6355933B1 (en) * | 1999-01-13 | 2002-03-12 | Advanced Micro Devices, Inc. | Ion source and method for using same |
| US6221169B1 (en) * | 1999-05-10 | 2001-04-24 | Axcelis Technologies, Inc. | System and method for cleaning contaminated surfaces in an ion implanter |
| US6420275B1 (en) * | 1999-08-30 | 2002-07-16 | Micron Technology, Inc. | System and method for analyzing a semiconductor surface |
| US6228563B1 (en) * | 1999-09-17 | 2001-05-08 | Gasonics International Corporation | Method and apparatus for removing post-etch residues and other adherent matrices |
| US20030056388A1 (en) * | 2000-07-18 | 2003-03-27 | Hiromoto Ohno | Cleaning gas for semiconductor production equipment |
| US6635144B2 (en) * | 2001-04-11 | 2003-10-21 | Applied Materials, Inc | Apparatus and method for detecting an end point of chamber cleaning in semiconductor equipment |
| GB0128913D0 (en) * | 2001-12-03 | 2002-01-23 | Applied Materials Inc | Improvements in ion sources for ion implantation apparatus |
| US7106438B2 (en) * | 2002-12-12 | 2006-09-12 | Perkinelmer Las, Inc. | ICP-OES and ICP-MS induction current |
| US20040235299A1 (en) * | 2003-05-22 | 2004-11-25 | Axcelis Technologies, Inc. | Plasma ashing apparatus and endpoint detection process |
| US20080223409A1 (en) * | 2003-12-12 | 2008-09-18 | Horsky Thomas N | Method and apparatus for extending equipment uptime in ion implantation |
| WO2005060602A2 (en) * | 2003-12-12 | 2005-07-07 | Semequip, Inc. | Controlling the flow of vapors sublimated from solids |
| US7791047B2 (en) * | 2003-12-12 | 2010-09-07 | Semequip, Inc. | Method and apparatus for extracting ions from an ion source for use in ion implantation |
| GB2412488B (en) * | 2004-03-26 | 2007-03-28 | Applied Materials Inc | Ion sources |
| US7819981B2 (en) * | 2004-10-26 | 2010-10-26 | Advanced Technology Materials, Inc. | Methods for cleaning ion implanter components |
| US7109085B2 (en) * | 2005-01-11 | 2006-09-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | Etching process to avoid polysilicon notching |
| US8278222B2 (en) * | 2005-11-22 | 2012-10-02 | Air Products And Chemicals, Inc. | Selective etching and formation of xenon difluoride |
| KR101455404B1 (ko) * | 2005-12-09 | 2014-10-27 | 세미이큅, 인코포레이티드 | 탄소 클러스터의 주입에 의한 반도체 디바이스의 제조를위한 시스템 및 방법 |
| US7531819B2 (en) * | 2005-12-20 | 2009-05-12 | Axcelis Technologies, Inc. | Fluorine based cleaning of an ion source |
| EP2021528A4 (en) * | 2006-04-26 | 2011-03-23 | Advanced Tech Materials | CLEANING OF SEMICONDUCTOR PROCESSING SYSTEMS |
| US8110815B2 (en) * | 2006-06-12 | 2012-02-07 | Semequip, Inc. | Vapor delivery to devices under vacuum |
| US8013312B2 (en) * | 2006-11-22 | 2011-09-06 | Semequip, Inc. | Vapor delivery system useful with ion sources and vaporizer for use in such system |
| KR20090127366A (ko) * | 2007-03-30 | 2009-12-10 | 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 | 반도체 디바이스용 극저 접합 형성 방법 |
| US7947966B2 (en) * | 2007-07-31 | 2011-05-24 | Axcelis Technologies, Inc. | Double plasma ion source |
| WO2009102762A2 (en) * | 2008-02-11 | 2009-08-20 | Sweeney Joseph D | Ion source cleaning in semiconductor processing systems |
| US8158017B2 (en) * | 2008-05-12 | 2012-04-17 | Lam Research Corporation | Detection of arcing events in wafer plasma processing through monitoring of trace gas concentrations |
| US8809800B2 (en) * | 2008-08-04 | 2014-08-19 | Varian Semicoductor Equipment Associates, Inc. | Ion source and a method for in-situ cleaning thereof |
| US8263944B2 (en) * | 2008-12-22 | 2012-09-11 | Varian Semiconductor Equipment Associates, Inc. | Directional gas injection for an ion source cathode assembly |
| US7999479B2 (en) * | 2009-04-16 | 2011-08-16 | Varian Semiconductor Equipment Associates, Inc. | Conjugated ICP and ECR plasma sources for wide ribbon ion beam generation and control |
| US8003959B2 (en) * | 2009-06-26 | 2011-08-23 | Varian Semiconductor Equipment Associates, Inc. | Ion source cleaning end point detection |
-
2009
- 2009-11-11 US US12/616,662 patent/US20110108058A1/en not_active Abandoned
-
2010
- 2010-11-11 TW TW099138796A patent/TWI500064B/zh not_active IP Right Cessation
- 2010-11-12 EP EP10787593A patent/EP2499653A2/en not_active Withdrawn
- 2010-11-12 CN CN201080051134.6A patent/CN102612731B/zh not_active Expired - Fee Related
- 2010-11-12 WO PCT/US2010/002969 patent/WO2011059504A2/en not_active Ceased
- 2010-11-12 KR KR1020127015073A patent/KR101741405B1/ko not_active Expired - Fee Related
- 2010-11-12 JP JP2012538809A patent/JP5827235B2/ja not_active Expired - Fee Related
-
2013
- 2013-07-23 US US13/948,280 patent/US20130305989A1/en not_active Abandoned
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