JP2013511128A5

JP2013511128A5 -

Info

Publication number: JP2013511128A5
Application number: JP2012538809A
Authority: JP
Filing date: 2010-11-12
Publication date: 2015-07-02
Anticipated expiration: 2030-11-12

Description

図７は、ガス供給源ライン５１８内に位置する第２プラズマ源７０２内にクリーニングプラズマが実際に発生している、ある実施形態を示している。この実施形態において、反応ガス（図２におけるガスクリーニング供給２１０，２１２から供給される。）は、ガス供給源ライン５１８の長さ分（例えば、およそ２メートル）輸送される。この実施形態において、ガス供給源ライン５１８は、第１伝導性ダクト７０６と第２伝導性ダクト７０８
との間で連結された誘電性ダクト７０４を含む。第１伝導性ダクト７０６は、ガス供給ラインとして述べられていてもよく、一方、第２伝導性ダクト７０８は、残光供給ラインとして述べられている。いくつかの実施形態において、誘電性ダクト７０４は、サファイア（フッ素互換性用）および伝導性ダクト７０６を含んでもよい。誘導コイル７１０は、開口５２４に非常に近いガス供給源ライン５１８に巻きつけられている。マッチング回路７１４を介して、誘導コイル７１０に連結されたＲＦ電源７１２が活性化されると、高濃度プラズマは、ガス供給ライン５１８内の領域７１６において発生される。したがって、プラズマは、反応種が残留物を清浄するよう使用される第１および／または第２室５０２，５１６に非常に近接して発生される。図７は、ＲＦコイル７１０を含む実施形態を示しているが、他の実施形態は、開口５２４に近接しているマイクロ波源または他のプラズマ発生部品と共に使用することができる。
FIG. 7 illustrates an embodiment in which cleaning plasma is actually generated in the second plasma source 702 located in the gas supply line 518. In this embodiment, the reactive gas (supplied from the gas cleaning supplies 210, 212 in FIG. 2) is transported for the length of the gas supply line 518 (eg, approximately 2 meters). In this embodiment, the gas supply line 518 includes a first conductive duct 706 and a second conductive duct 708.
And a dielectric duct 704 connected between the two. The first conductive duct 706 may be described as a gas supply line, while the second conductive duct 708 is described as an afterglow supply line. In some embodiments, dielectric duct 704 may include sapphire (for fluorine compatibility) and conductive duct 706. The induction coil 710 is wound around a gas supply line 518 very close to the opening 524. When the RF power source 712 coupled to the induction coil 710 is activated via the matching circuit 714, a high concentration plasma is generated in the region 716 in the gas supply line 518. Thus, the plasma is generated in close proximity to the first and / or second chambers 502, 516 where the reactive species are used to clean the residue. Although FIG. 7 illustrates an embodiment that includes an RF coil 710, other embodiments can be used with a microwave source or other plasma generating component proximate the opening 524.

Claims

A method for removing residues from ion source components used to extract an ion beam, comprising:
Generating a first plasma in a gas supply line including a dielectric duct connected to the left and right between the first conductive duct and the second conductive duct;
To facilitate removal of the first residue from the ion source component, using said first plasma containing fluorine,
After the first plasma is used, use a second plasma containing oxygen radicals to facilitate removal of a second residue different from the first residue from the ion source component at that location. A method characterized by.

The method of claim 1, wherein the gas used to generate the first plasma includes at least one of a fluorocarbon species or a fluorinated hydrocarbon species.

The method of claim 1, wherein the gas used to generate the first plasma does not include NF ₃ .

Based on whether a first predetermined condition is met, the exposure for the first plasma is selectively terminated, the first predetermined condition determining the extent of residue removal. The method of claim 1, wherein:

The first predetermined condition is related to whether a predetermined time has elapsed as measured from a start time of exposure for the first plasma. Item 5. The method according to Item 4 .

The first predetermined condition indicates whether the first plasma has completely removed the first residue from the ion source component by optical spectroscopic analysis using a second plasma source. Related to
The method of claim 4 , wherein the residue emits photons or light when a plasma is ignited in the second plasma source.

The first predetermined condition is related to whether residual gas mass spectrometry indicates whether the first plasma has completely removed the first residue from the ion source component. The method according to claim 4 , characterized in that:

The first predetermined condition is related to whether a temperature measurement indicates whether the first plasma has completely removed the first residue from the ion source. The method according to claim 4 .

The method of claim 1, wherein the first residue is a boron-based compound.

The method of claim 1, wherein the exposure for the second plasma is selectively terminated based on whether a second predetermined condition is met.

The method of claim 10 , wherein the second residue comprises a carbon-based compound.

The second predetermined condition is related to whether a predetermined time has elapsed as measured from a start time of exposure for the second plasma. Item 11. The method according to Item 10 .

The second predetermined condition indicates whether the second plasma has completely removed the second residue from the ion source component, as indicated by optical spectroscopy using a second plasma source. Related to
The method of claim 10 , wherein the residue emits photons or light when a plasma is ignited to the second plasma source.

The second predetermined condition is related to whether residual gas mass spectrometry indicates whether the second plasma has completely removed the second residue from the ion source component. 11. A method according to claim 10 , characterized.

A method for removing residues from ion source components used to extract an ion beam, comprising:
Extracting a first ion beam along a beam path to increase a first residue in the ion source component, wherein the first ion beam is generated by using a first gas containing a first molecular species;
A second ion beam is extracted along the beam path to increase a second residue in the ion source component, and the second ion beam is generated by using a second gas containing a second molecular species. The second residue is structurally different from the first residue,
In the gas supply line including a dielectric duct connected to the left and right between the first conductive duct and the second conductive duct, a first cleaning plasma discharge and a second cleaning plasma discharge are selectively generated, and the ions A method of facilitating removal of each of the first residue and the second residue from a source part.

The first cleaning plasma discharge and the second cleaning plasma discharge cause a first afterglow and a second afterglow, which are downstream of the first plasma discharge and the second plasma discharge, respectively, and the first afterglow and 16. The method according to claim 15 , wherein the second afterglow contacts each of the first residue and the second residue to remove the first residue and the second residue, respectively. The method described.

The method of claim 15 , wherein the first gas includes fluorine and does not include NF ₃ .

The method of claim 17 , wherein the first molecular species comprises boron.

The method of claim 17 , wherein the second gas includes oxygen.

The method of claim 19 , wherein the second molecular species comprises carbon.

A reactive gas supply system for facilitating removal of residues from beam parts,
A flow control assembly in fluid communication with a plurality of different dopant gas supplies; a plurality of different cleaning gas supplies; and at least one plasma chamber;
Directs the flow control assembly to selectively supply gas from the different dopant gas supply to one or more plasma chambers of one or more chambers to facilitate extraction of ion beams having different respective species along the beam line. And a control device suitable for causing the control device to selectively supply gas from the different cleaning gas supplies to generate different types of plasma discharge in one or more plasma chambers. The different types of plasma discharges are suitable for mitigating the increase in different types of residues formed when the ion beam having different species is extracted along the beam line. And the system.

An ion source including the first plasma chamber such that the first plasma chamber is disposed adjacent to the second plasma chamber;
A gas supply line suitable for selectively supplying one of a plurality of cleaning gases toward the first plasma chamber, the gas supply line comprising: a first conductive duct; a second conductive duct; With dielectric ducts connected to the left and right between
An ion implantation system comprising a plasma generating component suitable for generating a plasma in a hole defined by an inner surface of the dielectric duct.

The plasma is generated such that afterglow of the plasma flies around or diffuses in at least one of the first plasma chamber or the second plasma chamber, and removes residues formed in the ion source. The ion implantation system according to claim 22 , wherein:

23. The ion implantation system of claim 22 , wherein the dielectric duct includes sapphire.

The plasma generating component includes a radio frequency (RF) coil wound around the dielectric duct ;
The ion implantation system according to claim 22 , further comprising an RF power source for driving the RF coil.

The ion implantation system according to claim 22 , wherein the plasma generating component comprises a microwave source.