CN113663988B - Method and device for cleaning fluorinated surface in ion implanter - Google Patents
Method and device for cleaning fluorinated surface in ion implanter Download PDFInfo
- Publication number
- CN113663988B CN113663988B CN202110972639.6A CN202110972639A CN113663988B CN 113663988 B CN113663988 B CN 113663988B CN 202110972639 A CN202110972639 A CN 202110972639A CN 113663988 B CN113663988 B CN 113663988B
- Authority
- CN
- China
- Prior art keywords
- ion beam
- temperature
- boron
- internal
- internal element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/04—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by a combination of operations
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0064—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes
- B08B7/0071—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes by heating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0064—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes
- B08B7/0092—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes by cooling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
Abstract
The application provides a method for cleaning the fluorinated surface inside an ion implanter, which comprises the following steps: providing an ion beam source of a boron-containing ion beam within an ion implanter; and delivering the boron-containing ion beam from the ion beam source to an internal element having a fluorinated surface, whereby the boron-containing ion beam is directed to the fluorinated surface. Fluorine-containing particles are removed by implanting a boron ion beam, particularly a boron ion beam having a cleaning recipe, onto the fluorinated surface. Further, the present application allows the fluorine-containing particles to be easily volatilized and removed by adjusting the temperature (typically heating) of the fluorinated surface to a temperature range whereby the fluorine bonds are weakened. Alternatively, the fluorine-containing particles may be continuously, alternately or elastically removed by evacuation.
Description
The application is a divisional application of patent application with application number 201910976570.7 entitled "cleaning of fluorinated surfaces inside an ion implanter" filed on the date of application 2019, 10 and 15.
Technical Field
The present invention relates to cleaning of fluorinated surfaces within an ion implanter and, more particularly, to an apparatus and method for removing fluorine from fluorinated surfaces of internal components of an ion implanter.
Background
Fluorine is a common ion implantation element, but also strongly etches internal components of the ion implanter and thus causes particle control problems. Internal components include, but are not limited to, faraday cup (Faraday cup), chuck (chuck), aperture (aperture), electrode, magnet, and mass analyzer (mass analyzer). In particular, fluorinated surfaces are more severe in carbon and/or silicon based internal components, particularly carbon and/or silicon based internal components, because carbon (particularly graphite) and silicon are widely used inside ion implanters to achieve extremely low levels of metal contamination, also because fluorine is highly reactive with carbon and/or silicon and generates volatiles. In particular, when the internal element is formed of carbon or silicon and a low energy fluorine-containing ion beam is used, the formation of fluorine-containing volatiles may be more serious. For example, a fluorine-containing ion beam with an energy of no more than 1Kev can result in a rapid loss of control of particles, much faster than other ion beams. One reason is that very low energy ion beams concentrate their effect on the implanted surface, unlike pure implantation. Another reason is that 100eV to 1000eV is the operating range of reactive ion etching (reactive ion etch). Generally, the etching effect occurs at higher temperatures than are typical of etching substrates and is also associated with high ion beam energy levels. In contrast, at lower temperatures and low ion beam energies, the propensity of fluorinated surfaces (such as fluoride films) to form occurs at surfaces where fluoride ions and carbon atoms are bound to each other and held by carbon-fluorine bonds. It is noted that on the surface of some of the internal elements configured to create a magnetic and/or electric field, the formation of fluorinated material is significantly smaller than on the surface of other internal elements, since the presence of the magnetic and/or electric field alters the trajectories of the charged particles and thereby reduces the number of fluorine-containing particles that can interact chemically with such internal elements, especially when the strength of the magnetic and/or electric field is sufficiently strong. That is, if most of the internal components are made of graphite, there will be relatively little carbon-fluorine film formed on the mass analyzer, the electrodes configured to adjust the profile and bend the ion beam, and the magnets, but it will be apparent that there will be formed on the aperture, faraday cup, and chuck.
Currently, three commercial methods are used to clean fluorinated surfaces inside ion implanters. The first method breaks the vacuum and treats the fluorinated surface. In other words, the normal operation of the ion implanter is suspended such that the internal components having fluorinated surfaces are replaced or cleaned, and then the normal operation of the ion implanter is performed after the vacuum is restored. The second method is ion beam based cleaning formulations. For example, ion implantation is performed using an ion beam based on an inert gas or implantation recipe, such as an arsine or phosphine based gas, such that the fluorinated surface is implanted and improved. Third, multiple operations of the ion implanter. In this method, ion implantation is performed by sequentially applying different ion beams based on different ions, so that adverse effects of the fluorinated surface can be minimized.
Nevertheless, all current commercial processes have significant drawbacks. The first approach results in more down time required to break the vacuum and higher costs required to replace/clean the internal components. The second method is poorly effective (has a short effective time) and still requires a significant downtime when implanting an ion beam based cleaning recipe. The third approach has limited effectiveness and is not easily implemented because it impacts how the ion implanter is used (in many cases it is not feasible).
In view of the foregoing, there is a need to provide new solutions for cleaning fluorinated surfaces inside ion implanters, particularly for removing fluoride from internal components formed of carbon and/or silicon.
Disclosure of Invention
The present invention proposes three ways to clean the fluorinated surfaces of the internal components of an ion implanter. Briefly, the first approach uses hydrogen to interact with the fluorinated surface, thereby allowing the fluoride to be volatilized. For example, when the internal element is formed of graphite, the carbon-fluorine bond is replaced with a hydrogen-fluorine bond because the strength of the carbon-hydrogen bond is stronger than that of the carbon-fluorine bond. The second approach uses a boron ion beam to implant a fluorinated surface, thereby allowing fluorine-containing particles to be excluded. The third mode uses temperature control whereby the fluorinated surface is in a temperature range that allows the fluorine-containing particles to be readily volatilized. In either case, the fluorine-containing particles removed from the inner member may be removed from the ion implanter by evacuation or other means.
The first approach uses hydrogen based chemistry (hydrogen bases chemistry) to scavenge fluorine from the surface of (scavenge) internal components, thereby reducing or even eliminating etching and/or damage caused by the high chemical activity of fluorine. Typically, within an ion implanter, most of the internal components are fabricated from graphite. Here, the high strength of the hydrogen bond is used to bind fluorine atoms or fluorine-containing particles, and the strength of the hydrogen-fluorine bond is significantly stronger than that of the carbon-fluorine bond. This may be achieved by directing hydrogen atoms (or hydrogen-containing particles) onto the fluorinated surface to scavenge fluorine. It should be noted that this approach does not limit the source of hydrogen atoms (or hydrogen-containing particles) nor the internal components that can be cleaned. In addition, the energy of the guided hydrogen atoms (or hydrogen-containing particles) is preferably low enough to prevent the guided hydrogen atoms (or hydrogen-containing particles) from penetrating into the interior of the fluorinated material formed on the inner member. For example, an ion beam having a large number of hydrogen-containing ions (atomic or molecular) may be used to clean internal components previously implanted with fluorine-containing ions Shu Bu. For example, a plasma gun (plasma flood gun) operating a mixture containing a hydrogen-based material may emit hydrogen atoms (or hydrogen-containing particles) to nearby internal components, and even the plasma gun may be resiliently placed in the vicinity of any internal component that needs to be cleaned. The advantage of this approach is that the plasma gun creates more reactive atomic hydrogen ions on the surface and these ions can reach surfaces that are not adjacent to the beam path and cannot be cleaned by the method using the ion beam. Briefly, the method for cleaning a fluorinated surface within an ion implanter includes providing a source of hydrogen-containing particles within the ion implanter and delivering a plurality of hydrogen-containing particles from the source of hydrogen-containing particles to at least one internal component having a fluorinated surface such that the hydrogen-containing ion beams may be directed to the fluorinated surface.
The second approach uses the interaction between the ion beam of boron-containing particles and the fluorinated surface to improve the defects induced by fluorine bonds present in the surface portions of the internal components. Generally, any accessible gaseous material may be used to maintain a plasma that provides a boron-containing ion beam. For example, by referring to experimental results, a boron ion beam using a cleaning recipe, where the cleaning recipe is between 1Kev and 40Kev energy and the current is 5 microamperes, may be used to effectively remove a carbon-fluorine film formed on an internal component where the internal component may be heated to a temperature of about 250 degrees Celsius to 300 degrees Celsius in one to several minutes. Thus, the combination of fluorine and carbon may be effectively replaced by boron such that fluorine is scavenged from the internal components. In other words, the method of cleaning the fluorinated surface of the interior of the ion implanter is to provide a source of boron-containing ions within the interior of the ion implanter and then transfer the boron-containing ions from the source to an interior member having a fluorinated surface such that the boron-containing ions may be directed to the fluorinated surface.
The third way uses temperature regulation of the internal components to weaken fluorine bonds that are generated on the fluorinated surfaces of the internal components when ion implantation using a fluorine-containing ion beam is performed by the ion implanter, and thereby allow the fluorine-containing particles to be volatilized. In particular, it is advantageous when this is performed simultaneously with one or both of the foregoing approaches, since the temperature of the fluorinated surface is adjusted to accelerate the reaction rate of the fluorinated material with hydrogen atoms (or hydrogen-containing particles) and/or boron atoms (or boron-containing particles) with respect to each other. Similarly, this approach does not limit how the internal components are heated, or even cooled. For example, this approach may use contact heating or contact cooling, such as an electric heater in direct contact with the internal element, an electric current flowing directly through the internal element, or a heating/cooling fluid flowing directly through the interior of the internal element, but also non-contact heating or non-contact cooling, such as a far infrared lamp or a cold plate adjacent to the internal element. Briefly, the method for cleaning the fluorinated surface of the ion implanter includes providing a temperature adjustment device corresponding to at least one interior component of the ion implanter, and then using the temperature adjustment device to adjust the temperature of the interior component so as to volatilize the fluorinated material of the fluorinated surface of the interior component.
Incidentally, it is advantageous to use one or more devices to monitor the performance of these approaches, such as using an existing vacuum gauge (vacuum gauge) or an accompanying sensor. For example, residual gas analysis (residual gas analysis, RGA) is suitable because it can monitor the amount of gaseous product that is generated as a result of using these means.
In addition, all three of the proposed approaches can be simply implemented with existing available ion implanters, with some local modifications at best being required. For example, when a fluorine-containing ion beam or a boron-containing ion beam is used to implant a fluorinated surface, existing ion implanters may be used directly. In general, the gas supply system for providing the gaseous material to sustain the plasma to provide the ion beam needs to be tuned to efficiently provide the desired gaseous material. For example, in the case of directing hydrogen gas onto a fluorinated surface, an existing plasma gun may be used directly, with its gas supply system adjusted to provide both the typically pure neon gas and the hydrogen gas added at that time, and a remote plasma source (remote plasma source, RPS) of existing commercial products that can provide a large flow of hydrogen atoms may also be used. Furthermore, the ion implanter may be slightly modified to allow sources of hydrogen atoms (or hydrogen-containing particles), such as a plasma gun or a remote plasma source, to be flexibly placed at different locations within the ion implanter in order to clean different interior components separately. Thus, the number of hydrogen atoms (or hydrogen-containing particles) output required to clean some of the internal components distributed over a larger area may not be as great as would be required if the location of the plasma gun/remote plasma source were fixed. Further, in a third approach, current ion implanters must be modified to incorporate heaters (and even coolers) to adjust the temperature of the internal components having fluorinated surfaces that require cleaning. In any event, since the required temperature is not extremely high, typically 200 degrees celsius to 300 degrees celsius is sufficient, where only one or more simple devices and simple thermal insulation are required.
The advantages of the three presented approaches are evident for at least the following several reasons. For the first reason, no vacuum is required to replace and/or clean the internal components with fluorinated surfaces, thereby allowing for significant downtime and cost reduction. The second reason is that other parts of the three proposed approaches can be performed simultaneously, except that the use of an ion beam source to provide a hydrogen-containing ion beam and the use of an ion beam source to provide a boron-containing ion beam cannot be performed simultaneously. That is, the benefits of the present invention can be further enhanced compared to using one of the three approaches separately. The third reason is that the use of a heater (or even a cooler) allows the fluoride to be volatilized as it is formed, i.e., the formation and elimination of fluoride can occur simultaneously so that the required processing time is effectively reduced. For a fourth reason, different internal components may be cleaned separately and appropriately using different parts of the three approaches proposed. For example, because a plasma gun is typically placed downstream of the ion beam trajectory, the plasma gun is preferably used to clean the chuck, faraday cup, and chamber walls of the chamber in which the wafer is located. In contrast, the ion beam source used to provide the boron-containing ion beam or the hydrogen-containing ion beam is preferably used to clean the interior of the mass analyzer and to adjust the profile, bend, and accelerate and decelerate the ion beam electrodes and/or magnets because the distribution of the hydrogen-containing ion beam or the boron-containing ion beam can be elastically modified to effectively implant the fluorinated surface of one or more internal components. For a fifth reason, the interaction between the fluorinated surface and hydrogen atoms (or hydrogen-containing particles) or boron atoms (or boron-containing particles) and the fluorinated surface may be stronger than the interaction between the existing ion beam and the fluorinated surface when having a cleaning formulation, and thus the benefits of the first two approaches may be more efficient than the existing commercial approaches. For the sixth reason, all the proposed approaches are independent of what ion implantation is to be performed after the fluorinated surface is formed, and therefore the present invention is easily applied because it is negligible or even unaffected by the impact of how the ion implanter is used.
Drawings
Fig. 1A-1C relate to the use of a hydrogen-containing ion beam to clean fluorinated surfaces resulting from a previous ion implantation using a fluorine-containing ion beam.
Figures 2A-2C use a plasma gun, remote plasma source, or other source of hydrogen-containing particles to clean the fluorinated surfaces resulting from a previous ion implantation using a fluorine-containing ion beam.
Fig. 3 relates to the use of a boron-containing ion beam to clean fluorinated surfaces resulting from a previous ion implantation using a fluorine-containing ion beam.
Fig. 4A to 4B relate to experimental results of an example of the present invention.
Fig. 5A to 5C are qualitative summary descriptions of the evolution of the number of particles in the vacuum environment inside the reaction chamber over time under different conditions.
Fig. 6A-6C relate to the use of a temperature conditioning mechanism to clean fluorinated surfaces resulting from a previous ion implantation using a fluorine-containing ion beam.
Figures 7A through 7E relate to the use of a heater to heat the faraday cup back plate.
Reference numerals
101. Step square
102. Step square
110. Fluorinated materials
111. Ion beam source
112. Mass analyser
113. Pores of the material
114. Electrode/magnet
115. Suction cup
116. Faraday cup
117. Hydrogen-containing ion beam
201. Step square
202. Step square
210. Fluorinated materials
211. Ion beam source
212. Mass analyser
213. Pores of the material
214. Electrode/magnet
215. Suction cup
216. Faraday cup
217. Hydrogen-containing particle source
301. Step square
302. Step square
601. Step square
602. Step square
603. Step square
604. Step square
605. Step square
711. Heating light source assembly
7113. Light source
7115. Cooling water pipeline
712. Window assembly
7121. Metal frame
7123. Glass
7125. Water cooling pipeline
713. Bottom plate
714. Faraday cup
Detailed Description
Embodiments are described herein that clean fluorinated surfaces on internal components of an ion implanter. Some embodiments are associated with the use of a hydrogen-containing ion beam or a boron-containing ion beam, some embodiments are associated with the use of a plasma gun or other hydrogen-containing particle source, some embodiments are associated with the use of a heater (or even a cooler), and other embodiments are associated with any combination of the previous embodiments. Thereby, the fluorinated material formed on the inner element may be removed so that the fluorinated surface may be cleaned.
Some embodiments use a hydrogen-containing ion beam having a large number of hydrogen-containing ions (or hydrogen-containing particles) to clean fluorinated surfaces formed by ion implantation using a fluorine-containing ion beam. Reasonably, implementation of these embodiments does not require modification of the ion implanter configuration because the same ion beam source can maintain different plasmas corresponding to different ion beams. As a top, different gas supply systems (different gas cylinders or different gas supply lines) are used to provide different gaseous materials to this same ion beam source. Thus, as shown in FIG. 1A, a flowchart of a method for cleaning fluorinated surfaces within an ion implanter using a hydrogen-containing ion beam may be summarized by first providing an ion beam source of a hydrogen-containing ion beam within the ion implanter as shown in step block 101. Then, as shown in block 102, a hydrogen-containing ion beam is delivered from an ion beam source to an interior component having a fluorinated surface, such that the hydrogen-containing ion beam may be directed to the fluorinated surface.
Obviously, such a hydrogen-containing ion beam may provide a significant amount of hydrogen atoms (or a significant amount of hydrogen ions) to the fluorinated surface when the hydrogen-containing ion beam impinges on the internal components, thereby allowing fluorine atoms on the internal components to be purged. This is because the hydrogen-containing ions dissociate upon impact to release hydrogen atoms (or hydrogen ions) to interact with the fluorinated material, which may be a carbon-fluorine film formed on the surface of the graphite internal component, and because the combination of hydrogen-fluorine bonds is stronger than carbon-fluorine bonds. Reasonably, these embodiments only require a hydrogen-containing ion beam and do not require the details of the hydrogen-containing ion beam to be limited. In other words, the hydrogen-containing ion beam may be a pure hydrogen ion beam with a large amount of H + 、H 2+ And/or H 3+ Such ions may be, for example, PHx, but may also be an ion beam having a large number of hydrogen-containing ions (or, in other words, hydrogen compound ions) + 、AsHx + 、HeH + 、H 2 O + 、OH + Etc. Of course, depending on the specifics of the hydrogen-containing ion beam, the operation of the ion beam source, and even the operation of the gas supply system used to provide gaseous material to the ion beam source to maintain a plasma that can produce the hydrogen-containing ion beam, may be flexibly adjusted. The energy of the hydrogen-containing ion beam is proportional to the depth of the fluorinated material to be removed, thereby efficiently removing fluorine And avoid unwanted interactions between the hydrogen-containing ion beam and the internal components. It is often preferred to operate the hydrogen-containing ion beam at low energies to limit the distribution of interactions with the fluorinated material.
In addition, depending on the distribution of the fluorinated surface to be cleaned, these embodiments can flexibly adjust the operation of the ion implanter to properly direct the hydrogen-containing ion beam onto the fluorinated surface. For example, to increase the probability of thoroughly removing fluorinated material formed on one or more particular internal components, it is advantageous to intentionally increase the size of the hydrogen-containing ion beam to achieve better interaction with fluorinated surfaces when the hydrogen-containing ion beam would otherwise be transported in the vicinity of the particular internal components, and to intentionally oscillate the hydrogen-containing ion beam to better disperse hydrogen atoms across the fluorinated surfaces. Means for deliberately increasing and/or oscillating, or altering the profile and/or trajectory of the hydrogen-containing ion beam, include, but are not limited to, magnetic means (such as mass analyzer), electrostatic means (such as curved deceleration pattern), or deceleration to near zero ion beam energy. For example, in the situation depicted in fig. 1B, some fluorinated material 110 has been formed on some of the internal components located inside the ion implanter, such as the aperture 113, the chuck 115 and faraday cup 116, which move back and forth along a direction tangential to the beam trajectory, i.e., the fluorinated material 110 formed on the mass analyzer 112 and the electrode/magnet 114 configured to condition the ion beam is negligible. For example, in the situation depicted in fig. 1C, the hydrogen-containing ion beam 117 provided by the ion beam source 111 is intentionally correspondingly increased in cross-sectional area, thereby allowing the fluorinated materials 100 to be covered and cleaned by the hydrogen-containing ion beam 117. Obviously, these embodiments can clean the fluorinated surface by merely adjusting how the hydrogen-containing ion beam is transported inside the ion implanter without modifying the configuration of the ion implanter.
Some embodiments use other sources of hydrogen-containing particles, such as a plasma gun or remote plasma source, in addition to the ion beam source of the hydrogen-containing ion beam to clean fluorinated surfaces formed during a previous ion implantation using the fluorine-containing ion beam. Reasonably, implementation of these embodiments may or may not modify the configuration of the ion implanter, the detailed configuration of other sources of hydrogen-containing particles other than the ion beam source of the hydrogen-containing ion beam is not limited, and need not limit how the hydrogen-containing particle source is integrated into the ion implanter, although plasma guns commonly found inside ion implanters are a simple solution. Accordingly, as shown in FIG. 2A, a flowchart of a method for cleaning fluorinated surfaces within an ion implanter using a source of hydrogen-containing particles may be summarized by first providing a source of hydrogen-containing particles within the ion implanter, as shown in block 201. The hydrogen-containing particles are then transferred from the hydrogen-containing particle source to an internal component having a fluorinated surface, such that the hydrogen-containing particles may be directed to the fluorinated surface, as shown in step 202.
Obviously, such a source of hydrogen-containing particles provides hydrogen-containing particles (like atoms, molecules and/or ions of hydrogen itself or of a hydride) and hydrogen-based chemistry can be used to clean fluorinated surfaces. Similar to those previously described embodiments, the interaction between hydrogen atoms (or hydrogen-containing particles) and these fluorinated materials, such as carbon-fluorine films formed on graphite elements, can remove fluorine atoms from these elements because the strength of the hydrogen-fluorine bonds is greater than the strength of the carbon-fluorine bonds. Reasonably, these embodiments only require a hydrogen-containing particle source that can provide a large number of hydrogen-containing particles, but are not limited to the details of the hydrogen-containing particle source, as at least the gas supply system used to provide the desired gaseous material to the hydrogen-containing particle source and the location of the hydrogen-containing particle source are all flexible design choices. For example, the source of hydrogen-containing particles may be achieved by adding some hydrogen gas to pure neon, as is standard practice for existing plasma guns, where the plasma gun may decompose and at least partially dissociate the hydrogen gas, thereby providing hydrogen atoms and hydrogen-containing particles that are subsequently directed to a fluorinated surface located inside the ion implanter. For example, the hydrogen-containing particle source may be implemented by adding a remote plasma source of commercial products where it may provide a significant flow of hydrogen atoms into the ion implanter. In general, it is preferable to provide hydrogen ion-containing particles with low energy, thereby limiting the distribution of their interactions with the fluorinated material.
Furthermore, depending on the distribution of the fluorinated surface to be cleaned, these embodiments may adjust the location and/or operation of the source of the hydrogen-containing particles to properly direct the hydrogen-containing particles to the fluorinated surface. For example, to increase the likelihood of thoroughly removing fluorinated material formed on one or more particular internal elements, it may be advantageous to deliberately place a hydrogen-containing particle source adjacent to these particular internal elements to obtain a preferred interaction with the fluorinated surface. For example, as shown in fig. 2B, the hydrogen-containing particle source 217 is deliberately placed downstream of the ion beam path in the interior of the ion implanter to effectively remove fluorinated material formed on the chuck 215 and faraday cup 216 where the chuck 215 may be moved back and forth in a direction intersecting the ion beam path. For example, as shown in the situation of fig. 2C, the hydrogen-containing particle source 217 is deliberately placed in the ion implanter interior downstream of the ion beam path to effectively clean the fluorinated material formed in the aperture 213 and the electrode/magnet 214 configured to accelerate/decelerate/profile/bend the ion beam. That is, the fluorinated materials formed at the ion beam source 211 and the mass analyzer 212 are omitted in both cases. Clearly, these embodiments may or may not modify the overall configuration when cleaning the fluorinated surface, depending on what source of hydrogen-containing particles is used and where the source of hydrogen-containing particles is placed in the ion implanter.
Some embodiments use a boron-containing ion beam to clean fluorinated surfaces formed during a prior ion implantation using a fluorine-containing ion beam. Reasonably, these embodiments are similar to those previously discussed using a hydrogen-containing ion beam, except that the ion beam used is of a different type. Thus, implementations of these embodiments using a boron-containing ion beam may be accomplished without modifying the configuration of the ion implanter, and may use different gas supply systems (different gas bottles or different gas supply lines) to provide the desired boron-containing ion beam. By analogy, as shown in FIG. 3, a flowchart of a method for cleaning fluorinated surfaces located within an ion implanter using a boron-containing ion beam may be summarized by first providing an ion beam source of the boron-containing ion beam within the ion implanter, as shown in step block 301. The boron-containing ion beam is then delivered from the ion beam source to an internal component having a fluorinated surface, such that the boron-containing ion beam may be directed to the fluorinated surface, as shown in block 302. Furthermore, depending on the distribution of the fluorinated surface to be cleaned, these embodiments may adjust the operation of the ion implanter to properly direct the boron-containing ion beam onto the fluorinated surface. For example, the size of the boron-containing ion beam may be intentionally increased and/or the boron-containing ion beam may be intentionally oscillated when the original trajectory of the boron-containing ion beam is adjacent to the fluorinated surfaces. That is, these embodiments may clean fluorine-containing surfaces simply by adjusting how the boron-containing ion beam is transported within the ion implanter without changing the configuration of the ion implanter. For simplicity of illustration, changes in the ion beam trajectories of the boron-containing ion beam are not shown, as these changes are analogous to those in the case of using a hydrogen-containing ion beam.
Obviously, such boron-containing ion beams may provide boron-containing particles (such as atoms, molecules and/or ions of boron or boron compounds) to the fluorinated surface by collisions with the fluorinated surface. Fluorine-containing particles, in particular fluorine atoms, can be kicked out in the mutual collision of these boron-containing particles with the fluorinated surface. In addition, the energy of the boron-containing ion beam is typically high enough to heat the fluorinated surface during its collision with the fluorinated surface. In this way, the fluorinated material can be volatilized and at least the fluorine atoms can be volatilized. For example, as shown in fig. 4A and 4B, the internal components are the rear plate of a faraday cup made of graphite, and different papers attached to the faraday cup are used to monitor the ion beam combustion results (ion beam burn results) (shown as dark areas in the figures) separately. The former uses a two-dimensional fluorine ion beam having an ion beam energy of not more than 1Kev, and the latter uses a two-dimensional boron ion beam having an ion beam energy of between 1Kev and 40 Kev. Notably, the size of the combustion label (burn mark) in the latter case is approximately 4 cm wide and 13 cm high, which is significantly smaller than in the former case (approximately 16 to 20 cm wide and 10 to 30 cm high). Here, a commercial particle counter of model SP5, supplied by KLA-Tencor corporation, was used to measure particle performance on wafers, and the measurement results showed that the boron-containing ion beam effectively eliminated the fluorinated material generated in the previous ion implantation using the fluorine-containing ion beam. Thus, because the cleaning formulation using the boron-containing ion beam has a relatively large energy and because the combustion tag of the boron-containing ion beam is significantly smaller in size, it is reasonable that the boron-containing ion beam using the cleaning formulation can heat the surfaces of the internal components and volatilize fluorinated materials formed therein, particularly fluorinated materials that do not directly collide with the boron-containing ion beam.
In a basic qualitative depiction, as shown in fig. 5A, as the implantation time of the fluorine-containing ion beam increases, the number of particles that may be generated by the fluorinated material formed and that may fall into the vacuum environment within the chamber increases. However, if the ion implantation using the fluorine-containing ion beam (F-containing ion beam) is suspended at intervals as shown in FIG. 5B, the boron ion beam (B) is modified for a while + ion beam), it is seen that the number of particles in the vacuum environment inside the chamber is periodically reduced. Further, as shown in fig. 5C, in some embodiments, if the ion implantation is performed every few times a pause interval using the boron ion beam, the boron difluoride ion beam (BF 2 + ion beam), not only the number of particles can be significantly reduced, but also the particle increase rate can be slower over time in the subsequent ion implantation using a fluorine-containing ion beam. The details of ion implantation using a fluorine-containing ion beam are not limited herein, and one example is a fluorine ion beam having an energy of not more than 1 Kev. Details of cleaning using a boron ion beam are not limited herein, and one example is a boron ion beam having an energy of between 1Kev and 40 Kev. The details of cleaning using a boron difluoride ion beam are not limited herein, one example being to The energy is between 1KeV and 40KeV, and the single cleaning time of the boron difluoride ion beam is longer than that of the boron ion beam, such as that of one is less than half an hour and that of the other is between half an hour and one hour. It should be noted that fig. 5A to 5C are only qualitative summary descriptions, and do not depict in detail nor can they be used to limit the quantitative relationship of the particle number evolution over time in these three conditions.
Some embodiments use a temperature conditioning mechanism to clean fluorinated surfaces formed during a previous ion implantation using a fluorine-containing ion beam. As shown in step 601 and step 602 of fig. 6A, these embodiments may volatilize fluorinated material by adjusting the temperature of the interior components after ion implantation using a fluorine-containing ion beam to produce the fluorinated material on the interior components. In addition, as shown in step 603 of FIG. 6B, these embodiments may also adjust the temperature of the inner member while the ion implantation using the fluorine-containing ion beam produces a fluorinated material on the inner member, thereby reducing the effect of the surface of the inner member on fluorine atoms. Further, as shown in step 604 and step 605 of fig. 6C, these embodiments may also adjust the temperature of the interior components while performing the cleaning operation using the hydrogen-containing ion beam, the boron-containing ion beam, and/or the hydrogen-containing particles, thereby accelerating the reaction rate with the fluorinated material after the interior components have been formed by the previous ion implantation using the fluorine-containing ion beam. It should be noted that decreasing or increasing the temperature of the internal components typically decreases or increases their reaction rate non-linearly and tends to vary exponentially with temperature.
These embodiments do not limit how the temperature of the internal components is adjusted. In some examples, contact heating is used. For example, an electric heater placed in direct contact with the inner element, directs an electric current through the inner element itself or through a heating fluid directly inside the inner element. In some examples, non-contact heating is used. For example, infrared lamps, ultraviolet lamps, visible lamps, thermoelectric filaments, lasers, or other light sources that may generate electromagnetic radiation. In some examples, the cooling fluid flowing through the interior of the internal component is used directly or in contact with a component that has been fluid cooled. In some examples, the cooling mechanism is implemented by enhancing the radiative cooling capacity of the internal components, such as by allowing the internal components to be directly radiative cooled. In some examples, the cooling mechanism is implemented by bringing the internal components into contact with the cooled hardware or by bringing the internal components into proximity with the cold plate.
One example uses a graphite heater to heat the backing plate of the faraday cup. As shown in fig. 7A, a graphite heater 701 is embedded in a certain graphite plate like faraday cup 700 and is adjacent to but also separated from the back plate combination consisting of a graphite back plate 702 and an aluminum back plate 703 (or as the chamber wall), some supports (standoff) 704 are used to block heat from the graphite heater 701 and through holes (feed through) are used to provide bridging of the heat pipe and electrical cables between the vacuum environment and the atmosphere. Incidentally, although not particularly drawn, the graphite back plate 702 is usually a modification of the existing back plate, whereby graphite is added to shield the mounting holes (mounting holes) and the passage holes (through holes). Incidentally, the graphite heater 701 may be heated to about 250 degrees celsius. Fig. 7B shows a design of a graphite heater 701 where a metal sheet 706, which generates heat when a current is passed through, is embedded between two graphite sheets 707. Figure 7C shows that the heated graphite plate 708 is mounted inside faraday cup 700 and that both thermocouple 7091 for measurement and energy line 7092 for energy supply for heating are connected to the atmosphere from the vacuum environment inside the reaction chamber through passage holes. Fig. 7D shows a thermocouple 7091 used to test how the temperature range is heated outside the reaction chamber, but is adhered to the reaction chamber cavity wall 7094 by a temperature tape 7093 (temperature tape). Furthermore, although not specifically depicted, in some related embodiments, the heater may also be placed outside of the reaction chamber in which the faraday cup is located. In such a situation, heat conduction through the chamber walls is desirable, and even thermal insulation is desirable, to avoid boiling off water that would otherwise be embedded in the water tubes of the chamber walls. For example, solid heat conduction (such as copper) or piping to transport heated liquids and/or gases may be used to transfer heat from the atmosphere to the internal components. Clearly, such a condition is more complex but still viable than if the heater were placed inside the reaction chamber.
Fig. 7E shows another heater design. As shown, the heating light source assembly 711 does not directly contact the faraday cup 714, there are multiple light sources 7113 on its side facing the faraday cup 714, such as infrared lamps, ultraviolet lamps, visible lamps, thermoelectric wires, lasers, or other light sources that can generate electromagnetic radiation, and the heating light source assembly also has a cooling water conduit 7115. Typically, the heating light source assembly 711 includes a metal plate, and the light sources 7113 and the cooling water pipes 7115 are respectively located at opposite sides of the metal plate. Here, the process is carried out. The light sources 7113 must emit electromagnetic radiation that is not entirely inside the metal plate, but the cooling water channels 7115 may be entirely inside the metal plate or partially exposed to the surface of the metal plate. Thus, the light source 7113 can transfer energy to the faraday cup 714, and the flowing water flowing through the cooling water conduit 7115 can carry away heat generated during operation of the light source 7113, thereby stabilizing the temperature of the entire heating light source assembly 711. For simplicity of illustration, the wires for supplying power to the light source 7113 and the power and cooling lines connected to the heating light source assembly 711, etc. are omitted regardless of the main technical features of the present invention. The chamber walls between the heating light source assembly 711 and the faraday cup 714 are replaced by the window assembly 712, or the window assembly 712 may be considered as being embedded in the portion of the chamber walls directly facing the heating light source assembly 711. Basically, the window assembly 712 includes glass 7123 and a metal frame 7121 surrounding and holding the glass 7123, and the water cooling duct 7125 is also located in this metal frame 7121. Because the position and contour of the glass 7123 corresponds to the light source 7113, electromagnetic radiation can pass from the light source 7113 through the glass 7123 to the faraday cup 714, and heat generated by the electromagnetic radiation at the window assembly 712 can be carried away by the flowing water flowing through the water cooling conduit 7125. The material of the glass 7123 is not limited, and may be silica or quartz, for example, but it is preferable that the transmittance of electromagnetic radiation emitted from the light source 7113 is maximized. For example, when the electromagnetic radiation emitted by the light source 7113 is infrared, the material of the glass 7123 may be quartz. The material of the bottom plate 713 of the faraday cup 714 is graphite and its two faces directly face the glass 7123 and the ion beam incident on the faraday cup 714, respectively. Thus, the fluorinated material generated on the side of the substrate 713 facing the fluorine-containing ion beam due to interaction with the fluorine-containing ion beam can be volatilized by the energy of the radiation reaching the side of the substrate 713 facing the glass 7123. Typically, the heating light source assembly 711 is directly in contact with (or even fixed to) the window assembly 712, and in particular, tends to contact only its metal frame 7121 and not the glass 7123, but there is a space between both the faraday cup 714 and the bottom plate 713 and the window assembly 712, although the invention is not limited to these details. In addition, both the cooling water pipe 7115 and the water cooling pipe 7125 may be connected to the same cooling water supply system (like the same water tank and the same water circulation pipe), but may also be connected to different cooling water supply systems (like different water tanks and different water circulation pipes), respectively. That is, the temperature adjustment of both the heating light source assembly 711 and the quartz window assembly 712 may be performed together or separately. In addition, in order to efficiently remove heat, the cooling water pipe 7115 of the heating light source assembly 711 may be uniformly distributed at the other side of the surface of the heating light source assembly 711 where the light source 7113 is located, and the cooling water pipe 7125 of the window assembly 712 may uniformly surround the entire glass. It must be emphasized that the heater shown in fig. 7E not only heats the graphite plate used in the faraday cup to receive the ion beam, but also does not have to directly face the internal components that it is to heat. Since the heater shown in fig. 7E is heated by electromagnetic radiation, any internal element can be heated, and the relative geometry of the heated internal element and the window assembly 712 can be varied, so long as it is irradiated by electromagnetic radiation from passing through the window assembly 712. Although, to increase efficiency, the heater shown in FIG. 7E is more suitable for heating internal components near the chamber walls of the reaction chamber if it is ensured that electromagnetic radiation passing through the window assembly 712 is sufficient to heat the internal components. That is, while FIG. 7E illustrates Faraday cup 714 and bottom plate 713 as interior components that are heated to remove fluorinated material, in practice a combination of both heating light source assembly 711 and window assembly 712 may be used to heat treat a variety of different interior components.
Compared to the embodiment shown in fig. 7B, the embodiment shown in fig. 7E has other advantages, such as avoiding structural damage during heating or even particles falling into the vacuum environment inside the reaction chamber due to the difference in thermal expansion coefficient between the metal sheet 706 and the graphite plate 707, and avoiding pollution and interference caused by electrons emitted from the metal sheet 706 when current flows through the heating. It is apparent that the hardware design of fig. 7E further reduces the risk of particle contamination of faraday cup 714 and ensures proper operation of faraday cup 714 when the purpose is to heat the graphite plate of faraday cup 714 that will be implanted by the ion beam to eliminate fluorinated material on the surface of the graphite plate due to the use of the fluorine-containing ion beam. In the situation shown in fig. 7E, since the heating light source assembly 711 is located in the atmosphere outside the reaction chamber, particles are not caused to fall into the reaction chamber even if any structural damage or particle fall occurs during the operation thereof. In addition, in the situation shown in fig. 7E, not only is the light source 7113 not emit electrons due to the current flowing through the heating light source assembly 711 when it is operating normally, but even if the light source 7113 is operating abnormally, the electrons emitted by the window assembly 712 and the chamber walls are effectively blocked, so that it is ensured that the measurement result of the faraday cup 714 is not biased due to the received electrons.
In addition, the heater configuration described above may also be used to heat other internal components, such as pores and electrodes, because the temperature regulation mechanism is not related to the function of the internal components. Incidentally, in some ion implanters, the heating magnet may significantly alter the magnetic field such that it is generally not necessary to use a heater to heat the magnet. Regardless, if the heater is properly designed, the present invention may choose to heat the magnet to volatilize the fluorinated material formed therein if the magnetic field is properly adjusted and/or if the defect caused by the fluorinated material is severe. Further, for some internal components that can generate magnetic and/or electric fields, the number of ions striking their surfaces is relatively small (significantly less than the number of ions striking the faraday cup's back plate), so that the formation of fluorinated surfaces is also relatively slowed. In other words, in addition to the faraday cup back plate, a heater is typically used to heat the aperture to volatilize the fluorinated material.
Further, it is advantageous to monitor the performance of the embodiments discussed above. This can be achieved by existing means, like vacuum measuring means, but also preferably by using proximity sensors. For example, known residual gas analysis is well suited for such purposes, as it allows monitoring of the gaseous products produced by these embodiments. For example, the supply of hydrogen gas may be temporarily stopped, thereby comparing the difference in output from the detector between when hydrogen is supplied and when hydrogen is not supplied, and determining whether to supply hydrogen gas again or even how much fluorinated material remains and needs to be cleaned. Other forms of in-situ sensing are also valuable, such as thin film sensors or fluorine sensitive surfaces that may be heated or cooled, to monitor changes in surface properties associated with fluorine.
The foregoing description is of the preferred embodiment of the invention and it is noted that numerous improvements and modifications can be made by those skilled in the art without departing from the principles of the invention. Such improvements and modifications are also considered within the scope of the claimed invention.
Claims (17)
1. A method of cleaning a fluorinated surface within an ion implanter comprising the steps of:
providing an ion beam source of a boron-containing ion beam within an ion implanter, wherein the boron-containing ion beam comprises a boron ion beam and a boron difluoride ion beam;
delivering the boron-containing ion beam from the ion beam source to an internal component having a fluorinated surface, whereby the boron-containing ion beam is directed to the fluorinated surface for cleaning with the boron ion beam once after each ion implantation with the fluorine-containing ion beam; and
after each cleaning with the boron ion beam is performed several times, the cleaning with the boron difluoride ion beam is performed once, and then the ion implantation with the fluorine-containing ion beam and the cleaning with the boron ion beam are resumed alternately.
2. The method of claim 1, further comprising the step of:
The trajectory and profile of the boron-containing ion beam output from the ion beam source is adjusted to increase the probability of thoroughly removing fluorinated material formed on the interior element having a fluorinated surface.
3. The method of claim 2, wherein the step of adjusting the trajectory and profile of the boron-containing ion beam output from the ion beam source comprises:
increasing a size of the boron-containing ion beam to adjust a profile of the boron-containing ion beam output from the ion beam source; and/or
The boron-containing ion beam is oscillated to adjust a profile of the boron-containing ion beam output from the ion beam source.
4. The method of claim 1, wherein the boron ion beam has an energy between 1Kev and 40Kev and a current of 5 microamperes, and the internal components are heated to a temperature of 250 degrees celsius to 300 degrees celsius for said cleaning.
5. The method of claim 1, wherein the fluorine-containing ion beam is a fluorine ion beam having an energy of no greater than 1Kev, the boron ion beam has an energy of between 1Kev and 40Kev, the boron difluoride ion beam has an energy of between 1Kev and 40Kev, and a single cleaning time using the boron difluoride ion beam is longer than a single cleaning time using the boron ion beam.
6. The method of claim 1, further comprising the step of:
providing a temperature adjustment device simultaneously with providing an ion beam source of the boron-containing ion beam, the temperature adjustment device corresponding to the internal element having a fluorinated surface; and
the temperature adjustment device is used to adjust the temperature of the internal components to thereby accelerate the reaction rate of the fluorinated material and the boron-containing ion beam with each other.
7. The method of claim 6, wherein the step of using the temperature adjustment device to adjust the temperature of the internal component comprises at least one of:
adjusting a temperature of the internal element using at least one of contact heating, non-contact heating, contact cooling, and non-contact cooling;
directing a current through the internal element to regulate a temperature of the internal element; and
the internal components are directly radiation cooled to regulate the temperature of the internal components.
8. The method of claim 7, wherein the step of adjusting the temperature of the internal element using at least one of contact heating, non-contact heating, contact cooling, and non-contact cooling comprises at least one of:
Adjusting the temperature of the internal element using an electric heater in direct contact with the internal element;
allowing a heating fluid to flow directly through the inner element to regulate the temperature of the inner element;
passing a cooling fluid directly through the internal component to regulate a temperature of the internal component;
adjusting the temperature of the internal element using at least one of an infrared lamp, an ultraviolet lamp, a visible lamp, a thermoelectric wire, a laser, and a light source capable of emitting electromagnetic radiation;
bringing the internal element and the cooled hardware into contact with each other to regulate the temperature of the internal element;
bringing the internal element adjacent to a cold plate to regulate the temperature of the internal element;
using a graphite heater to regulate the temperature of the internal element, wherein a bracket is used to block heat from the graphite heater and a through hole is used to provide bridging of the heat pipe and the electrical cable between the vacuum environment and the atmospheric environment;
adjusting the temperature of the internal element using a metal sheet which generates heat when a current flows therethrough, the metal sheet being interposed between two graphite plates;
adjusting the temperature of the internal components using a heater located outside the reaction chamber; and
the temperature of the internal element is regulated by using a heating light source assembly positioned outside the reaction chamber, wherein a plurality of light sources are arranged on the surface of the heating light source assembly facing the internal element, and a window assembly is embedded in the cavity wall of the reaction chamber and directly faces the heating light source assembly part, so that electromagnetic radiation emitted by the light sources can reach the internal element positioned inside the reaction chamber through the window assembly, and the temperature of the internal element is regulated.
9. The method of claim 1, wherein the internal element is selected from one of: faraday cups, suction cups, apertures, electrodes, magnets, mass analyzers, and any combination thereof.
10. An apparatus for cleaning fluorinated surfaces within an ion implanter, comprising:
an ion beam source configured to provide a boron-containing ion beam within the ion implanter and to deliver the boron-containing ion beam to an interior element having a fluorinated surface such that the boron-containing ion beam is directed to the fluorinated surface, wherein the boron-containing ion beam comprises a boron ion beam and a boron difluoride ion beam,
the apparatus performs cleaning once with the boron ion beam after each ion implantation using the fluorine-containing ion beam, performs cleaning once with the boron difluoride ion beam after each cleaning using the boron ion beam several times, and then resumes the alternately performing the ion implantation using the fluorine-containing ion beam and the cleaning using the boron ion beam.
11. The apparatus of claim 10, wherein the ion beam source is a gas bottle or a gas supply line for providing the gaseous material comprising boron-containing particles.
12. An apparatus for cleaning fluorinated surfaces within an ion implanter, comprising:
a temperature adjusting device configured to adjust a temperature of an internal member while ion implantation using a fluorine-containing ion beam is performed by the ion implanter, thereby weakening an effect of a surface of the internal member and fluorine atoms, and to volatilize a fluorinated material by adjusting the temperature of the internal member after ion implantation using the fluorine-containing ion beam generates the fluorinated material on the internal member;
here, the internal element is selected from one of the following: faraday cup, suction cup, aperture, electrode, magnet, mass analyzer and any combination thereof;
the temperature adjusting device adjusts the temperature of the internal element in one of the following ways: contact heating, non-contact heating, contact cooling, non-contact cooling, and any combination thereof.
13. The apparatus of claim 12, wherein the material of the inner member is selected from one of: graphite, carbon, silicon, and any combination thereof.
14. The apparatus of claim 12, wherein the means for regulating the temperature of the internal components is selected from one of the following: an electric heater in direct contact with the internal element, a current is directed through the internal element itself, a heating fluid is directed through the internal element interior, an infrared lamp, an ultraviolet lamp, a visible lamp, a thermoelectric wire, a laser, or other light source capable of generating electromagnetic radiation, a cooling fluid is directed through the internal element interior, the internal element is in contact with a fluid cooled element, the internal element is directly radiation cooled, the internal element is in contact with cooled hardware, the internal element is adjacent to a cold plate, and any combination thereof.
15. A method of cleaning a fluorinated surface within an ion implanter comprising the steps of:
providing a temperature regulating device, wherein the temperature regulating device corresponds to at least one internal element of the ion implanter;
adjusting the temperature of the internal element using the temperature adjusting device while performing ion implantation using a fluorine-containing ion beam by an ion implanter, thereby weakening the effect of the surface of the internal element and fluorine atoms; and
after ion implantation using the fluorine-containing ion beam produces fluorinated material on the inner member, the temperature adjustment device is again used to adjust the temperature of the inner member, thereby allowing the fluorinated material of the fluorine-containing surface of the inner member to volatilize.
16. The method of claim 15, further comprising the step of:
after ion implantation using a fluorine-containing ion beam to form a fluorinated material for the internal element, cleaning is performed using at least one of a hydrogen-containing ion beam, a boron-containing ion beam, and hydrogen-containing particles.
17. The method of claim 16, further comprising at least one of the following steps:
adjusting the temperature of the internal element using at least one of contact heating, non-contact heating, contact cooling and non-contact cooling;
Using an electric heater in direct contact with the internal element to regulate the temperature of the internal element;
directing a current through the internal element to regulate a temperature of the internal element;
allowing the heating fluid to flow directly through the inner element to regulate the temperature of the inner element;
adjusting the temperature of the internal element using at least one of an infrared lamp, an ultraviolet lamp, a visible lamp, a thermoelectric wire, a laser, and a light source capable of emitting electromagnetic radiation;
allowing a cooling fluid to flow directly through the inner element to regulate the temperature of the inner element;
bringing the internal element into contact with the fluid-cooled hardware to regulate the temperature of the internal element;
allowing the internal component to directly radiate cool to regulate the temperature of the internal component;
bringing the internal element and the cooled hardware into contact with each other to regulate the temperature of the internal element;
bringing the internal element adjacent to the cold plate to adjust the temperature of the internal element;
the use of a graphite heater to regulate the temperature of the internal components, where the support is used to block heat from the graphite heater and the through holes are used to provide bridging of the heat pipe and the electrical cables between the vacuum environment and the atmospheric environment;
using a metal sheet which generates heat when a current flows between two graphite plates to adjust the temperature of the internal components;
Using a heater located outside the reaction chamber to regulate the temperature of the internal components; and
the internal components are regulated by using a heating light source assembly positioned outside the reaction chamber, wherein a plurality of light sources are arranged on the surface of the heating light source assembly facing the internal components, and a window assembly is embedded in the cavity wall of the reaction chamber and directly faces the heating light source assembly, so that electromagnetic radiation emitted by the light sources can reach the internal components positioned inside the reaction chamber through the window assembly, and the temperature of the internal components is regulated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110972639.6A CN113663988B (en) | 2018-10-18 | 2019-10-15 | Method and device for cleaning fluorinated surface in ion implanter |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201862747290P | 2018-10-18 | 2018-10-18 | |
| US62/747,290 | 2018-10-18 | ||
| CN202110972639.6A CN113663988B (en) | 2018-10-18 | 2019-10-15 | Method and device for cleaning fluorinated surface in ion implanter |
| CN201910976570.7A CN111069188B (en) | 2018-10-18 | 2019-10-15 | Cleaning fluorinated surfaces inside ion implanters |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910976570.7A Division CN111069188B (en) | 2018-10-18 | 2019-10-15 | Cleaning fluorinated surfaces inside ion implanters |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113663988A CN113663988A (en) | 2021-11-19 |
| CN113663988B true CN113663988B (en) | 2023-09-05 |
Family
ID=70310349
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110972639.6A Active CN113663988B (en) | 2018-10-18 | 2019-10-15 | Method and device for cleaning fluorinated surface in ion implanter |
| CN201910976570.7A Active CN111069188B (en) | 2018-10-18 | 2019-10-15 | Cleaning fluorinated surfaces inside ion implanters |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910976570.7A Active CN111069188B (en) | 2018-10-18 | 2019-10-15 | Cleaning fluorinated surfaces inside ion implanters |
Country Status (2)
| Country | Link |
|---|---|
| CN (2) | CN113663988B (en) |
| TW (2) | TWI759640B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113130283B (en) * | 2019-12-31 | 2023-01-24 | 中微半导体设备(上海)股份有限公司 | Plasma processing device and heater thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1147690A (en) * | 1995-08-28 | 1997-04-16 | 易通公司 | Method and apparatus for in situ removal of contaminants from ion beam neutralization and implantation apparatuses |
| EP1061550A2 (en) * | 1999-05-10 | 2000-12-20 | Axcelis Technologies, Inc. | System and method for cleaning contaminated surfaces in an ion implanter |
| CN102549705A (en) * | 2009-10-01 | 2012-07-04 | 普莱克斯技术有限公司 | Method for ion source component cleaning |
| CN102612731A (en) * | 2009-11-11 | 2012-07-25 | 艾克塞利斯科技公司 | Method and apparatus for cleaning residue from an ion source component |
| CN103515172A (en) * | 2012-06-22 | 2014-01-15 | 日新离子机器株式会社 | Ion beam irradiation apparatus and operation method thereof |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5554854A (en) * | 1995-07-17 | 1996-09-10 | Eaton Corporation | In situ removal of contaminants from the interior surfaces of an ion beam implanter |
| JP2701810B2 (en) * | 1995-10-27 | 1998-01-21 | 株式会社日立製作所 | Plasma processing method and apparatus |
| CN1163951A (en) * | 1995-11-21 | 1997-11-05 | 大同北产株式会社 | Method for processing semiconductor material and apparatus employed therein |
| WO2001071790A1 (en) * | 2000-03-17 | 2001-09-27 | Hitachi, Ltd. | Method of manufacturing semiconductor device |
| JP4374487B2 (en) * | 2003-06-06 | 2009-12-02 | 株式会社Ｓｅｎ | Ion source apparatus and cleaning optimization method thereof |
| US20080223409A1 (en) * | 2003-12-12 | 2008-09-18 | Horsky Thomas N | Method and apparatus for extending equipment uptime in ion implantation |
| CN1937280A (en) * | 2005-09-20 | 2007-03-28 | 气体产品与化学公司 | Method for removing organic electroluminescent residues from a substrate |
| CN100377314C (en) * | 2005-12-02 | 2008-03-26 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Method for removing residual polymer in polysilicon etching technology |
| US20070178678A1 (en) * | 2006-01-28 | 2007-08-02 | Varian Semiconductor Equipment Associates, Inc. | Methods of implanting ions and ion sources used for same |
| US8603252B2 (en) * | 2006-04-26 | 2013-12-10 | Advanced Technology Materials, Inc. | Cleaning of semiconductor processing systems |
| US7655571B2 (en) * | 2006-10-26 | 2010-02-02 | Applied Materials, Inc. | Integrated method and apparatus for efficient removal of halogen residues from etched substrates |
| JP2009123795A (en) * | 2007-11-13 | 2009-06-04 | Hitachi Kokusai Electric Inc | Manufacturing method of semiconductor device and substrate treatment apparatus |
| US8809800B2 (en) * | 2008-08-04 | 2014-08-19 | Varian Semicoductor Equipment Associates, Inc. | Ion source and a method for in-situ cleaning thereof |
| US8591659B1 (en) * | 2009-01-16 | 2013-11-26 | Novellus Systems, Inc. | Plasma clean method for deposition chamber |
| JP5342386B2 (en) * | 2009-09-17 | 2013-11-13 | セイコーインスツル株式会社 | Method for removing fluorine compound deposited on source housing of ion generator and ion generator |
| CN204265722U (en) * | 2014-11-11 | 2015-04-15 | 杭州中能汽轮动力有限公司 | In lubricating oil, volatiles removes refining plant |
-
2019
- 2019-10-15 CN CN202110972639.6A patent/CN113663988B/en active Active
- 2019-10-15 CN CN201910976570.7A patent/CN111069188B/en active Active
- 2019-10-18 TW TW108137793A patent/TWI759640B/en active
- 2019-10-18 TW TW111106878A patent/TWI788233B/en active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5633506A (en) * | 1995-07-17 | 1997-05-27 | Eaton Corporation | Method and apparatus for in situ removal of contaminants from ion beam neutralization and implantation apparatuses |
| CN1147690A (en) * | 1995-08-28 | 1997-04-16 | 易通公司 | Method and apparatus for in situ removal of contaminants from ion beam neutralization and implantation apparatuses |
| EP1061550A2 (en) * | 1999-05-10 | 2000-12-20 | Axcelis Technologies, Inc. | System and method for cleaning contaminated surfaces in an ion implanter |
| CN102549705A (en) * | 2009-10-01 | 2012-07-04 | 普莱克斯技术有限公司 | Method for ion source component cleaning |
| CN102612731A (en) * | 2009-11-11 | 2012-07-25 | 艾克塞利斯科技公司 | Method and apparatus for cleaning residue from an ion source component |
| CN103515172A (en) * | 2012-06-22 | 2014-01-15 | 日新离子机器株式会社 | Ion beam irradiation apparatus and operation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI759640B (en) | 2022-04-01 |
| CN111069188A (en) | 2020-04-28 |
| CN111069188B (en) | 2021-09-14 |
| TW202223997A (en) | 2022-06-16 |
| TWI788233B (en) | 2022-12-21 |
| CN113663988A (en) | 2021-11-19 |
| TW202017007A (en) | 2020-05-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP4646920B2 (en) | Method and apparatus for extending equipment operational time in ion implantation | |
| CN105702547B (en) | Ion implantation system and method | |
| JP5026711B2 (en) | Ion implantation system and control method | |
| JP4126634B2 (en) | Ion source and cleaning method during ion treatment process | |
| EP0127188B1 (en) | Dry etching apparatus and method using reactive gas | |
| JP4927859B2 (en) | Dual-mode ion source for ion implantation | |
| US20080223409A1 (en) | Method and apparatus for extending equipment uptime in ion implantation | |
| CN101449354B (en) | New and improved ion source | |
| JP2009540534A (en) | Method and apparatus for extracting ions from an ion source for use in ion implantation | |
| JP2008546153A (en) | Prevention of fine particles in ion implantation. | |
| JP2004519070A (en) | Ion implantation system and control method | |
| CN113663988B (en) | Method and device for cleaning fluorinated surface in ion implanter | |
| US20150357151A1 (en) | Ion implantation source with textured interior surfaces | |
| JP5310977B2 (en) | Contaminant reducing structure and method for ion implanters | |
| WO2009091943A1 (en) | In-vacuum protective liners | |
| JP7132254B2 (en) | cleaning equipment | |
| JPH05182623A (en) | Ion implantation device and method of lengthening lifetime of ion source | |
| EP0487656B1 (en) | Charge neutralization apparatus for ion implantation system | |
| JP3077516B2 (en) | Plasma processing equipment | |
| JP2023040748A (en) | Vacuum static eliminator | |
| WO2020101793A2 (en) | Device and method for plasma treatment of electronic materials | |
| JP2010192704A (en) | Surface treatment apparatus and method | |
| JPH03222241A (en) | Ion source device | |
| JPH05266856A (en) | Ion radiator, and electric-charge prevention device therefor and electric-charge prevention method | |
| JP2007266022A (en) | Plasma generator, plasma treating apparatus using same, and electronic apparatus |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |