CN113663988A

CN113663988A - Method and apparatus for cleaning fluorinated surfaces within an ion implanter

Info

Publication number: CN113663988A
Application number: CN202110972639.6A
Authority: CN
Inventors: 苏义翔; 史蒂芬·R·瓦尔特; 黄启铭; 吴志强
Original assignee: Advanced Ion Beam Technology Inc
Current assignee: Advanced Ion Beam Technology Inc
Priority date: 2018-10-18
Filing date: 2019-10-15
Publication date: 2021-11-19
Anticipated expiration: 2039-10-15
Also published as: TWI759640B; CN113663988B; TWI788233B; CN111069188A; TW202223997A; CN111069188B; TW202017007A

Abstract

The invention provides a method for cleaning the fluorinated surface inside an ion implanter, which comprises the following steps: providing an ion beam source for a boron-containing ion beam within an ion implanter; and transporting the boron-containing ion beam from the ion beam source to an internal component having a fluorinated surface, whereby the boron-containing ion beam is directed to the fluorinated surface. Fluorine-containing particles are removed by implanting a boron beam, particularly a boron beam having a cleaning recipe, onto a fluorinated surface. Further, the present invention allows the fluorine-containing particles to be easily volatilized and removed by adjusting the temperature of the fluorinated surface (typically by heating) to a temperature range whereby the fluorine bonds are weakened. Alternatively, the fluorine-containing particles may be continuously, alternately or elastically vacuumed.

Description

Method and apparatus for cleaning fluorinated surfaces within an ion implanter

The present application is a divisional application of a patent application entitled "cleaning fluorinated surfaces inside an ion implanter" filed on application date 2019, 10, 15 and having an application number of 201910976570.7.

Technical Field

The present invention relates generally to cleaning fluorinated surfaces within ion implanters, and more particularly to apparatus and methods for removing fluorine from fluorinated surfaces of internal components of ion implanters.

Background

Fluorine is a commonly used ion implantation element, but also strongly etches internal components of the ion implanter and thereby causes particle control problems. Internal components include, but are not limited to, Faraday cups (Faraday cups), suction cups (chuck), apertures (aperture), electrodes, magnets, and mass analyzers (mass analyzers). In particular, fluorinated surfaces are more severe in carbon and/or silicon based interior components, particularly those having carbon and/or silicon as their surfaces, because carbon (particularly graphite) and silicon are widely used in ion implanters to achieve very low levels of metal contamination, and because fluorine is highly reactive with carbon and/or silicon and generates volatiles. In particular, when the internal element is formed of carbon or silicon and a low-energy fluorine-containing ion beam is used, the formation of fluorine-containing volatile matter is more serious. For example, a fluorine-containing ion beam having an energy of no more than 1Kev can result in rapid runaway of particle control, much faster than other ion beams. One reason is that very low energy beams tend to concentrate their action on the surface being implanted, rather than simply implanting. Another reason is that 100eV to 1000eV is the working range of reactive ion etching (reactive ion etch). Generally, the etching effect is more likely to occur at the higher temperatures often encountered in etching substrates and is also associated with high ion beam energy levels. In contrast, at lower temperatures and low ion beam energies, the formation of fluorinated surfaces (such as fluoride films) tends to occur on surfaces where fluorine ions and carbon atoms are bonded to each other and are held by carbon-fluorine bonds. It is noted that the formation of fluorinated material on the surface of some internal elements configured to create magnetic and/or electric fields is significantly less than the formation of fluorinated material on the surface of other internal elements, since the presence of magnetic and/or electric fields changes the trajectory of charged particles and thereby reduces the number of fluorine-containing particles that can interact chemically with such internal elements, especially when the strength of the magnetic and/or electric fields is sufficiently strong. That is, if most of the internal components are made of graphite, the carbon-fluorine films formed on the mass analyzer, the electrodes and magnets configured to shape and bend the ion beam are relatively few, but are significantly formed on the apertures, faraday cups and chuck.

Currently, there are three commercially available methods for cleaning fluorinated surfaces inside an ion implanter. In the first method, a vacuum is broken and the fluorinated surface is treated. In other words, the normal operation of the ion implanter is suspended, so that the interior components with fluorinated surfaces are replaced or cleaned, and then the normal operation of the ion implanter is performed again after the vacuum is restored. In the second method, an ion beam based cleaning formulation is implanted. For example, an ion beam implanted with an inert gas or implantation recipe (such as a gas implanted with arsine or phosphine) is used to perform the ion implantation, thereby causing the fluorinated surface to be implanted and improved. In a third method, multiple operations of an ion implanter are performed. In this method, different ion beams based on different ions are successively applied to perform ion implantation, whereby the negative effects of the fluorinated surface can be minimized.

Nevertheless, all current commercial processes have significant disadvantages. The first method results in more down time (downtime) required to break the vacuum and higher cost required to replace/clean the internal components. The second approach works poorly (has a short active time) and still requires significant down time in implanting the ion beam based cleaning recipe. The third approach has limited effectiveness and is not easy to implement because it impacts how the ion implanter is used (and in many cases is not feasible).

In view of the foregoing, there is a need to provide new solutions for cleaning fluorinated surfaces within ion implanters, particularly for removing fluoride from internal components formed of carbon and/or silicon.

Disclosure of Invention

The present invention provides three ways to clean fluorinated surfaces of internal components of an ion implanter. Briefly, the first approach uses hydrogen to interact with a fluorinated surface, thereby allowing the fluoride to be volatilized. For example, when the internal element is formed of graphite, since the carbon-hydrogen bond is stronger than the carbon-fluorine bond, the carbon-fluorine bond is replaced by the hydrogen-fluorine bond. The second approach uses a boron ion beam to implant the fluorinated surface, thereby allowing fluorine-containing particles to be excluded. And a third approach uses temperature control, whereby the temperature range of the fluorinated surface allows the fluorine-containing particles to be easily volatilized. In either manner, the fluorine-containing particles removed from the internal components may be removed from the ion implanter by evacuation or other means.

The first approach uses hydrogen based chemistry to scavenge (scuvenge) fluorine on the internal device surface, thereby reducing or even eliminating etching and/or damage due to the high chemical activity of fluorine. Typically, most internal components within an ion implanter are fabricated from graphite. Here, high strength of hydrogen bond is used to bind fluorine atom or fluorine-containing particle, and strength of hydrogen-fluorine bond is significantly stronger than that of carbon-fluorine bond. This can be accomplished by directing hydrogen atoms (or hydrogen-containing particles) to the fluorinated surface to remove fluorine. It should be noted that this approach does not limit the source of the hydrogen atoms (or hydrogen-containing particles) nor the internal components that can be cleaned. In addition, the energy of the directed hydrogen atoms (or hydrogen-containing particles) is preferably low enough to prevent the directed hydrogen atoms (or hydrogen-containing particles) from penetrating deep into the interior of the fluorinated material formed on the inner member. For example, an ion beam having a large number of hydrogen-containing ions (atomic or molecular) may be used to clean internal components that have been previously implanted by a fluorine-containing ion beam. For example, a plasma gun (plasma flood gun) operating with a mixture containing hydrogen-based materials may emit hydrogen atoms (or hydrogen-containing particles) to nearby internal components, and even the plasma gun may be flexibly placed in the vicinity of any internal components that need to be cleaned. The advantage of this is that the plasma gun creates atomic hydrogen ions that are more reactive on the surface and that these ions can reach surfaces that are not adjacent to the beam path and cannot be cleaned by the method using the ion beam. Briefly, the method of cleaning fluorinated surfaces within an ion implanter includes providing a source of hydrogen-containing particles within the ion implanter and then transporting a plurality of hydrogen-containing particles from the source of hydrogen-containing particles to at least one internal component having a fluorinated surface such that the hydrogen-containing ion beams can be directed to the fluorinated surface.

The second approach uses the interaction between the ion beam containing boron particles and the fluorinated surface to ameliorate fluorine bond-induced defects present in surface portions of the internal components. Generally, any accessible gaseous material may be used to maintain the plasma that provides the boron-containing ion beam. For example, by referring to the experimental results, the carbon-fluorine film formed on the inner member can be effectively removed by using a boron ion beam of a cleaning formulation having an energy of 1Kev to 40Kev and a current of 5 microamperes, wherein the temperature of the inner member can be heated to about 250 ℃ to 300 ℃ in one to several minutes. Thus, the combination of fluorine and carbon may be effectively substituted with boron, allowing fluorine to be scavenged from the internal components. In other words, the fluorinated surface within an ion implanter is cleaned by providing a source of a boron-containing ion beam within the ion implanter and then transporting the boron-containing ion beam from the source to an internal component having a fluorinated surface such that the boron-containing ion beam is directed to the fluorinated surface.

A third approach uses temperature adjustment of the internal element to weaken fluorine bonds that are created on the fluorinated surface of the internal element when the ion implanter performs ion implantation using a fluorine-containing ion beam, thereby allowing fluorine-containing particles to be volatilized. In particular, it is advantageous when this approach is performed simultaneously with one or both of the aforementioned approaches, because the temperature of the fluorinated surface is adjusted to accelerate the rate of reaction of the fluorinated material with the hydrogen atoms (or hydrogen-containing particles) and/or boron atoms (or boron-containing particles) with each other. Similarly, this approach does not limit how the internal components are heated, or even cooled. This may be done, for example, using contact heating or contact cooling, such as electric heaters in direct contact with the internal element, electric current flowing directly through the internal element or a heating/cooling fluid flowing directly inside the internal element, but also non-contact heating or non-contact cooling, such as far infrared lamps or cooling plates (ceramic plates) adjacent to the internal element. Briefly, the method of cleaning fluorinated surfaces within an ion implanter includes providing a temperature adjustment device corresponding to at least one internal component of the ion implanter, and then adjusting the temperature of the internal component using the temperature adjustment device to volatilize fluorinated material from the fluorinated surfaces of the internal component.

Additionally, it may be advantageous to monitor the performance of these modalities using one or more devices, such as an existing vacuum gauge (vacuum gauge) or an attached sensor. Residual Gas Analysis (RGA), for example, is suitable because it allows monitoring of the amount of gaseous product produced as a result of using these means.

In addition, all three of the proposed approaches can be simply implemented with existing accessible ion implanters, with most local modifications being required. For example, conventional ion implanters may be used directly when fluorine-containing or boron-containing ion beams are used to implant fluorinated surfaces. At best, the gas supply system used to provide the gaseous material to maintain the plasma to provide the ion beam needs to be adjusted to efficiently provide these desired gaseous materials. For example, in the case of introducing hydrogen gas to a fluorinated surface, an existing plasma torch may be used directly, the gas supply system may be adjusted to provide both pure neon under typical conditions and additional hydrogen gas at the same time, and a Remote Plasma Source (RPS) that provides a large flow of hydrogen atoms may also be used. In addition, the ion implanter may be slightly modified so that the source of hydrogen atoms (or hydrogen-containing particles), such as a plasma gun or remote plasma source, may be flexibly placed at various locations within the ion implanter in order to clean the various internal components separately. Thus, to clean a wide range of internal components, the number of hydrogen atoms (or hydrogen-containing particles) output required may not be as great as that required if the plasma gun/remote plasma source location were fixed. Further, in a third approach, current ion implanters must be modified to incorporate heaters (and even coolers) to adjust the temperature of internal components having fluorinated surfaces that require cleaning. In any case, since the temperatures required are not extremely high, typically 200 to 300 degrees celsius is sufficient, where only one or more simple devices and simple thermal insulation are required.

The advantages of the three proposed approaches are apparent for at least several reasons. For the first reason, no vacuum is required to replace and/or clean internal components having fluorinated surfaces, thereby effectively reducing down time and cost. For a second reason, other portions of the three proposed approaches may be performed simultaneously, except that the use of an ion beam source to provide the hydrogen-containing ion beam and the use of an ion beam source to provide the boron-containing ion beam may not be performed simultaneously. That is, the benefits of the present invention can be further enhanced as compared to using one of these three approaches separately. For a third reason, the use of heaters (and even coolers) allows the fluoride to be volatilized as it is formed, i.e., the formation and elimination of fluoride can occur simultaneously so that the required processing time is effectively reduced. For a fourth reason, different internal components can be properly cleaned using different parts of the three proposed approaches, respectively. For example, because the plasma gun is typically placed downstream of the ion beam trajectory, the plasma gun is preferably used to clean the chuck, faraday cup, and chamber walls of the chamber in which the wafer is located. In contrast, ion beam sources for providing boron-containing or hydrogen-containing ion beams are preferably employed for cleaning the interior of mass analyzers and for profiling, bending, and accelerating and decelerating the electrodes and/or magnets of the ion beam, since the profile of the hydrogen-containing or boron-containing ion beam can be flexibly modified to effectively implant fluorinated surfaces of one or more internal components. For a fifth reason, the interaction between the fluorinated surface and the hydrogen atoms (or hydrogen-containing particles) or boron atoms (or boron-containing particles) and the fluorinated surface may be stronger than the interaction between the conventional ion beam and the fluorinated surface with the cleaning recipe, so that the benefits of the first two approaches may be more beneficial than the commercial methods. For a sixth reason, all of the proposed approaches do not relate to what kind of ion implantation is to be performed after the fluorinated surface is formed, and therefore, the present invention is easily applicable because it has negligible or even no impact on how the ion implanter is used.

Drawings

Fig. 1A-1C relate to the use of a hydrogen-containing ion beam to clean fluorinated surfaces resulting from a previously performed ion implantation using a fluorine-containing ion beam.

Figures 2A-2C use a plasma gun, remote plasma source, or other source of hydrogen-containing particles to clean fluorinated surfaces resulting from a previously performed ion implantation using a fluorine-containing ion beam.

Figure 3 relates to the use of a boron-containing ion beam to clean a fluorinated surface resulting from a previously performed ion implantation using a fluorine-containing ion beam.

Fig. 4A to 4B are related to experimental results of an example of the present invention.

FIGS. 5A to 5C are qualitative abstract descriptions of the evolution of the number of particles in the vacuum environment inside the reaction chamber with time under different conditions.

Fig. 6A-6C relate to cleaning fluorinated surfaces resulting from a previously performed ion implantation using a fluorine-containing ion beam using a temperature conditioning mechanism.

Fig. 7A to 7E relate to heating a faraday cup back plate using a heater.

Reference numerals

101 step block

102 step block

110 fluorinated materials

111 ion beam source

112 mass analyser

113 pore space

114 electrode/magnet

115 suction cup

116 Faraday cup

117 hydrogen containing ion beam

Step 201 Block

202 step block

210 fluorinated material

211 ion beam source

212 mass analyser

213 pores

214 electrode/magnet

215 suction cup

216 Faraday cup

217 source of hydrogen-containing particles

301 step block

302 step block

Block of step 601

602 step block

Block of step 603

Step 604 Block

Step 605 of the block

711 heating light source assembly

7113 light source

7115 Cooling water pipeline

712 window assembly

7121 Metal frame

7123 glass

7125 Water-cooled pipeline

713 chassis

714 Faraday cup

Detailed Description

Embodiments are described herein that can clean fluorinated surfaces on internal components of an ion implanter. Some embodiments relate to the use of a hydrogen-containing ion beam or a boron-containing ion beam, some embodiments relate to the use of a plasma gun or other source of hydrogen-containing particles, some embodiments relate to the use of a heater (or even a cooler), and other embodiments relate to any combination of the previous embodiments. Thereby, the fluorinated material formed on the internal element can be removed so that the fluorinated surface can be cleaned.

Some embodiments use a hydrogen-containing ion beam having a plurality of hydrogen-containing ions (or hydrogen-containing particles) to clean a fluorinated surface previously formed by ion implantation using a fluorine-containing ion beam. Implementation of these embodiments may be reasonably accomplished without modification to the configuration of the ion implanter, since the same ion beam source may maintain different plasmas corresponding to different ion beams. At best, different gas supply systems (different gas cylinders or different gas supply lines) are used to provide different gaseous materials to this same ion beam source. Accordingly, as shown in FIG. 1A, a flow chart of a method for cleaning fluorinated surfaces within an ion implanter using a hydrogen-containing ion beam is summarized by first providing an ion beam source for the hydrogen-containing ion beam within the ion implanter, as shown in block 101. A hydrogen-containing ion beam is then transmitted from the ion beam source to an internal component having a fluorinated surface, such that the hydrogen-containing ion beam can be directed to the fluorinated surface, as shown in block 102.

It is apparent that such a hydrogen-containing ion beam can provide a large number of hydrogen atoms (or a large number of hydrogen ions) to the fluorinated surface when the hydrogen-containing ion beam strikes the internal component, thereby allowing fluorine atoms on the internal component to be removed. This is because hydrogen-containing ions dissociate upon impact to release hydrogen atoms (or hydrogen ions) to interact with the fluorinated material, and because hydrogen-fluorine bonds are more strongly bonded than carbon-fluorine bondsThe fluorinated material may be a carbon-fluorine film formed on the surface of the graphite internal member. Reasonably, these embodiments require only a hydrogen-containing ion beam and do not require the details of the hydrogen-containing ion beam to be limited. In other words, the hydrogen-containing ion beam may be a pure hydrogen ion beam with a large amount of H⁺、H²⁺And/or H³⁺Such ions may be ion beams containing a large amount of hydrogen-containing ions (or hydrogen compound ions) and having a large amount of PHx⁺、AsHx⁺、HeH⁺、H₂O⁺、OH⁺And so on. Of course, depending on the details of the hydrogen-containing ion beam, the operation of the ion beam source, and even the operation of the gas supply system used to provide gaseous materials to the ion beam source to maintain the plasma that generates the hydrogen-containing ion beam, may be flexibly adjusted. The energy of the hydrogen-containing ion beam is directly proportional to the depth of the fluorinated material to be cleaned, thereby efficiently removing fluorine and avoiding undesirable interaction between the hydrogen-containing ion beam and internal components. It is generally preferred to operate the hydrogen-containing ion beam at low energies to limit the distribution of interactions with the fluorinated material.

In addition, these embodiments can flexibly adjust the operation of the ion implanter to properly direct the hydrogen-containing ion beam to the fluorinated surface, depending on the profile of the fluorinated surface that needs to be cleaned. For example, to increase the probability of completely removing fluorinated material formed on one or more particular internal components, it may be advantageous to intentionally increase the size of the hydrogen-containing ion beam to achieve better interaction with fluorinated surfaces, and to intentionally oscillate the hydrogen-containing ion beam to better distribute hydrogen atoms across the fluorinated surfaces, as the beam would otherwise be transported to the vicinity of those particular internal components. The manner in which the beam is intentionally increased and/or oscillated, or otherwise modified in profile and/or trajectory, includes, but is not limited to, magnetic (such as mass analyzers), electrostatic (such as bend deceleration modes), or decelerated to near zero beam energy. For example, in the situation depicted in fig. 1B, some fluorinated material 110 has been formed on some internal components within the ion implanter, such as the aperture 113, the chuck 115 that moves back and forth in a direction tangential to the beam trajectory, and the faraday cup 116, i.e., the fluorinated material 110 formed on the mass analyzer 112 and the electrode/magnet 114 configured to condition the ion beam is negligible. For example, in the situation depicted in fig. 1C, the hydrogen-containing ion beam 117 provided by the ion beam source 111 is intentionally increased in cross-sectional area, such that the fluorinated materials 100 are covered and cleaned by the hydrogen-containing ion beam 117. Clearly, without modification to the configuration of the ion implanter, these embodiments can clean fluorinated surfaces by merely adjusting how the hydrogen-containing ion beam is transported within the ion implanter.

Some embodiments use other sources of hydrogen-containing particles than the beam source of the hydrogen-containing ion beam, such as a plasma gun or a remote plasma source, to clean fluorinated surfaces formed by previously performed ion implantations using a fluorine-containing ion beam. Implementation of these embodiments may or may not reasonably modify the configuration of the ion implanter, the detailed configuration of other sources of hydrogen-containing particles other than the beam source of the hydrogen-containing ion beam is not limited, and it is also not necessary to limit how the source of hydrogen-containing particles is integrated into the ion implanter, although the plasma gun that is ubiquitous inside the ion implanter is a simple solution. Accordingly, as shown in fig. 2A, a flow chart of a method for cleaning fluorinated surfaces within an ion implanter using a source of hydrogen-containing particles may be summarized as follows.a first step, as shown in block 201, is to provide a source of hydrogen-containing particles within the ion implanter. The hydrogen-containing particles are then transported from a source of hydrogen-containing particles to an internal component having a fluorinated surface, such that the hydrogen-containing particles can be directed to the fluorinated surface, as shown in block 202.

Obviously, such a source of hydrogen-containing particles provides hydrogen-containing particles (such as hydrogen itself or atoms, molecules and/or ions of hydrides) and hydrogen-based chemistry can be used to clean fluorinated surfaces. Similar to those embodiments described previously, the interaction between the hydrogen atoms (or hydrogen-containing particles) and the fluorinated materials (such as carbon-fluorine films formed on graphite elements) can remove fluorine atoms from the elements because the strength of the hydrogen-fluorine bonds is greater than the strength of the carbon-fluorine bonds. Reasonably, these embodiments only require a source of hydrogen-containing particles that can provide a large amount of hydrogen-containing particles, but do not limit the details of the source of hydrogen-containing particles, such as the gas supply system used to provide the desired gaseous material to the source of hydrogen-containing particles, and the location of the source of hydrogen-containing particles, at least, are design choices that are flexible. For example, the source of hydrogen-containing particles may be achieved by adding a quantity of hydrogen gas to pure neon used in standard practice in existing plasma guns, where the plasma gun may decompose and at least partially dissociate the hydrogen gas to provide hydrogen atoms and hydrogen-containing particles that are then directed to a fluorinated surface located inside the ion implanter. For example, the source of hydrogen-containing particles may be accomplished by adding a remote plasma source of commercial products, where it provides a large flux of hydrogen atoms into the interior of the ion implanter. Generally, it is preferred to provide hydrogen-containing ion particles with low energy, thereby limiting the distribution of their interaction with the fluorinated material.

Furthermore, depending on the distribution of the fluorinated surface that needs to be cleaned, the embodiments may adjust the location and/or operation of the source of hydrogen-containing particles, thereby properly directing the hydrogen-containing particles to the fluorinated surface. For example, in order to increase the probability of completely removing fluorinated material formed on one or more particular internal components, it may be advantageous to deliberately place a source of hydrogen-containing particles adjacent to these particular internal components to obtain a better interaction with the fluorinated surface. For example, as shown in the situation of figure 2B, a source 217 of hydrogen-containing particles is deliberately placed within the interior of the ion implanter downstream of the beam path to effectively remove fluorinated material formed on the chuck 215 and faraday cup 216, where the chuck 215 may be moved back and forth in a direction transverse to the beam path. For example, as shown in the situation of fig. 2C, a source 217 of hydrogen-containing particles is deliberately placed within the interior of the ion implanter midstream of the beam path to effectively clean the fluorinated material formed in the aperture 213 and the electrodes/magnets 214 configured to accelerate/modify the profile/bend the ion beam. That is, the fluorinated material formed in the ion beam source 211 and the mass analyzer 212 is omitted in both cases. Clearly, these embodiments may or may not modify the overall configuration when cleaning fluorinated surfaces, depending on what source of hydrogen-containing particles is used and where the source of hydrogen-containing particles is placed in the ion implanter.

Some embodiments use a boron-containing ion beam to clean fluorinated surfaces formed by a previously performed ion implantation using a fluorine-containing ion beam. These embodiments are reasonably similar to the previously discussed embodiments using a hydrogen-containing ion beam, except that the type of ion beam used is different. Thus, implementations of these embodiments using boron-containing ion beams may be implemented without modifying the configuration of the ion implanter, and may use different gas supply systems (different gas bottles or different gas supply lines) to provide the desired boron-containing ion beam. By analogy, as shown in FIG. 3, a flow diagram of a method for cleaning a fluorinated surface located within an ion implanter using a boron-containing ion beam may be summarized by first providing an ion beam source for the boron-containing ion beam within the ion implanter, as shown in block 301. The boron-containing ion beam is then transported from the ion beam source to an interior component having a fluorinated surface, such that the boron-containing ion beam can be directed to the fluorinated surface, as shown in block 302. In addition, depending on the profile of the fluorinated surface that needs to be cleaned, these embodiments may adjust the operation of the ion implanter to properly direct the boron-containing ion beam to the fluorinated surface. For example, the boron-containing ion beam may be intentionally increased in size and/or intentionally oscillated when its original trajectory is adjacent to the fluorinated surfaces. That is, embodiments may clean fluorine-containing surfaces by merely adjusting how a boron-containing ion beam is transported within an ion implanter without changing the configuration of the ion implanter. For simplicity of illustration, the variations in beam trajectory of the boron-containing ion beam are not shown, as these variations are analogous to those when using a hydrogen-containing ion beam.

Obviously, such a boron-containing ion beam may provide boron-containing particles (such as atoms, molecules and/or ions of boron or boron compounds) to the fluorinated surface by collisions with the fluorinated surface. Fluorine-containing particles, particularly fluorine atoms, are kicked out during the collision of these boron-containing particles with the fluorinated surface. In addition, the energy of the boron-containing ion beam is typically high enough to heat the fluorinated surface during its collision with the fluorinated surface. In this way, the fluorinated material can be volatilized and at least the fluorine atoms can be volatilized. For example, as shown in fig. 4A and 4B, the internal component is a back plate of a faraday cup made of graphite, and different pieces of paper attached to the faraday cup are used to monitor ion beam burn results (shown as dark regions in the figure) separately. The former uses a two-dimensional fluorine ion beam having an ion beam energy of not more than 1Kev, and the latter uses a two-dimensional boron ion beam having an ion beam energy of between 1Kev and 40 Kev. Notably, the size of the burn tag (burn mark) in the latter condition is about 4 cm wide by 13 cm high, which is significantly smaller than the size in the former condition (about 16 to 20 cm wide by 10 to 30 cm high). Here, a commercial particle counter, model SP5, supplied by KLA-Tencor, was used to measure particle performance on wafers, and the measurements showed that the boron-containing ion beam could efficiently eliminate fluorinated materials generated by a previously performed ion implantation using a fluorine-containing ion beam. Thus, because the cleaning formulation using the boron-containing ion beam has a greater energy and because the combustion signature of the boron-containing ion beam is significantly smaller in size, it is reasonable that the boron-containing ion beam using the cleaning formulation can heat the surface of the internal components and volatilize fluorinated materials formed therein, particularly fluorinated materials that do not directly collide with the boron-containing ion beam.

In basic qualitative terms, as shown in fig. 5A, as the implantation time of the fluorine-containing ion beam increases, the number of particles of the formed fluorinated material falling into the vacuum environment inside the reaction chamber increases. However, as shown in FIG. 5B, the ion implantation using the F-containing ion beam (F-condensation beam) is suspended at intervals, and the use of boron for a period of time is improvedIon beam (B)⁺ion beam), a periodic decrease in the number of particles in the vacuum environment inside the chamber is observed. Further, as shown in fig. 5C, in some embodiments, the boron difluoride ion Beam (BF) is used once every few times for the pause interval of the ion implantation₂ ⁺ion beam), not only the number of particles can be significantly reduced, but the rate of particle increase is slower over time even in subsequent ion implantations using a fluorine-containing ion beam. Here, the details of ion implantation using a fluorine-containing ion beam need not be limited, and one example is to use a fluorine ion beam having an energy of not more than 1 Kev. Here, the details of cleaning using the boron ion beam are not limited, and one example is to use the boron ion beam having an energy of 1Kev to 40 Kev. Here, the details of cleaning using a boron difluoride ion beam need not be limited, one example is to have an energy between 1KeV and 40KeV, and the single cleaning time using a boron difluoride ion beam is longer than the single cleaning time using a boron ion beam, such as one single cleaning time being less than half an hour and another single cleaning time being between half an hour and an hour. It should be noted that fig. 5A to 5C are only qualitatively and abstractly described, and do not describe in detail or limit the quantitative relationship of the evolution of the particle number with time in these three conditions.

Some embodiments use a temperature conditioning mechanism to clean fluorinated surfaces formed by a previously performed ion implantation using a fluorine-containing ion beam. As shown in

blocks

601 and 602 of fig. 6A, embodiments may volatilize fluorinated material by adjusting the temperature of the inner element after the fluorinated material is produced on the inner element by ion implantation using a fluorine-containing ion beam. Additionally, as shown in block 603 of FIG. 6B, embodiments may also adjust the temperature of the inner element while the ion implantation using the fluorine-containing ion beam produces fluorinated material on the inner element, thereby reducing the effect of the surface of the inner element and fluorine atoms. Further, as shown in

blocks

604 and 605 of FIG. 6C, the embodiments may also adjust the temperature of the internal components while performing cleaning operations using the hydrogen-containing ion beam, the boron-containing ion beam, and/or the hydrogen-containing particles to accelerate the rate of reaction with the fluorinated material after the fluorinated material has been formed within the internal components by a previously performed ion implantation using the fluorine-containing ion beam. It should be noted that decreasing or increasing the temperature of the internal components generally decreases or increases their reaction rate non-linearly and often exhibits an exponential change with temperature.

These embodiments do not limit how the temperature of the internal components can be adjusted. In some instances, contact heating is used. For example, an electrical heater placed in direct contact with the internal element directs electrical current through the internal element itself or directly through a heating fluid within the internal element. In some instances, non-contact heating is used. For example, an infrared lamp, an ultraviolet lamp, a visible light lamp, a thermal wire, a laser, or other light source that can generate electromagnetic radiation. In some instances, the cooling fluid is directed through the interior of the internal components or is in contact with components that have been cooled by the fluid. In some instances, the cooling mechanism is achieved by enhancing the radiant cooling capacity of the internal components, such as by direct radiant cooling of the internal components. In some examples, the cooling mechanism is implemented by contacting the internal components with cooled hardware or by placing the internal components adjacent to the cold dummy plate.

One example uses a graphite heater to heat the back plate of the faraday cup. As shown in fig. 7A, a graphite heater 701 is embedded in a graphite plate like a faraday cup 700 and is adjacent to but also separated from the back plate assembly consisting of a graphite back plate 702 and an aluminum back plate 703 (or considered as a chamber wall), standoffs 704 are used to block heat from the graphite heater 701 and through holes (feed through) are used to provide bridging of heat pipes and electrical cables between the vacuum environment and the atmosphere. Incidentally, although not specifically drawn, the graphite backing plate 702 is typically a modification of existing backing plates, whereby graphite is added to shield the mounting holes (mounting holes) and the vias (through holes). Incidentally, the graphite heater 701 may be heated to approximately 250 degrees celsius. Fig. 7B shows a design of a graphite heater 701 where a metal sheet 706, which generates heat when an electric current can flow through it, is embedded between two sheets of graphite 707. Fig. 7C shows that the heated graphite plate 708 is mounted inside the faraday cup 700 and the thermocouple 7091 for measurement and the energy line 7092 for supplying energy for heating are connected to the atmospheric region through the passage hole from the vacuum environment inside the reaction chamber. Figure 7D shows the used to test the heating to which temperature range of the thermocouple 7091 is located outside the reaction chamber, but through the temperature tape 7093(temperature tape) is adhered to the reaction chamber wall 7094. Furthermore, although not specifically depicted, in certain related embodiments, the heater may also be placed outside of the reaction chamber in which the faraday cup is located. In such a situation, heat conduction through the chamber walls is desirable, and even thermal insulation is desirable to avoid boiling off water that would otherwise be embedded in the water tubes of the chamber walls. For example, solid heat conduction (such as copper) or piping for transporting heated liquids and/or gases may be employed to transfer heat from the atmospheric environment to the internal components. Obviously, such a situation is more complex but still feasible, compared to the situation where the heater is placed inside the reaction chamber.

Fig. 7E shows another heater design. As shown, the heating light source assembly 711 does not directly contact the faraday cup 714, and has a plurality of light sources 7113, such as infrared lamps, ultraviolet lamps, visible light lamps, thermal wires, lasers, or other light sources capable of generating electromagnetic radiation, on a surface facing the faraday cup 714, and a cooling water conduit 7115. Generally, the heating light source assembly 711 includes a flat metal plate, and the light sources 7113 and the cooling water pipe 7115 are respectively located at opposite sides of the flat metal plate. Here, the process is repeated. The light sources 7113 must emit electromagnetic radiation and may not be located entirely inside the metal plate, but the cooling water pipe 7115 may be located entirely inside the metal plate or partially exposed on the surface of the metal plate. Therefore, the light source 7113 can transmit energy to the position of the faraday cup 714, and the flowing water flowing through the cooling water pipe 7115 can take away the heat generated by the operation of the light source 7113, thereby stabilizing the temperature of the whole heating light source assembly 711. For simplicity of illustration, electric wires for supplying power to the light source 7113, and power supply and cooling pipes connected to the heating light source assembly 711, etc., which are not related to the main technical features of the present invention, are omitted. The wall of the chamber between the heating light source assembly 711 and the faraday cup 714 is replaced by a window assembly 712, or the window assembly 712 can be considered as a portion embedded in the wall of the chamber directly facing the heating light source assembly 711. Basically, the window assembly 712 includes a glass 7123 and a metal frame 7121 surrounding and holding the glass 7123, and a water cooling pipe 7125 is also located at this metal frame 7121. Since the glass 7123 is positioned and contoured to the light source 7113, electromagnetic radiation may pass from the light source 7113 through the glass 7123 to the faraday cup 714, and heat generated by the electromagnetic radiation at the window assembly 712 may be carried away by the flowing water flowing through the water cooling conduit 7125. The material of the glass 7123 is not limited, and may be silicon dioxide or quartz, but the transmittance of the electromagnetic radiation emitted from the light source 7113 is preferably maximized. For example, when the electromagnetic radiation emitted by the light source 7113 is infrared, the material of the glass 7123 can be quartz. The bottom plate 713 of faraday cup 714 is graphite and has two sides that directly face glass 7123 and the ion beam incident on faraday cup 714, respectively. Thus, fluorinated material on the side of the base plate 713 facing the fluorine-containing ion beam, generated by interaction with the fluorine-containing ion beam, may be volatilized by the energy of the radiation reaching the side of the base plate 713 facing the glass 7123. Typically, the heating light source assembly 711 is in direct contact with (or even fixed to) the window assembly 712, and more particularly, often only in contact with the metal frame 7121 thereof and not in contact with the glass 7123, but there is a space between the faraday cup 714 and the bottom plate 713 and the window assembly 712, although the invention is not limited to these details. In addition, both the cooling water pipe 7115 and the water cooling pipe 7125 may be connected to the same cooling water supply system (like the same water tank and the same water circulation pipe), but may also be connected to different cooling water supply systems (like different water tanks and different water circulation pipes), respectively. That is, the temperature adjustment of the heating light source assembly 711 and the quartz window assembly 712 may be performed together or separately. In addition, in order to efficiently remove heat, the cooling water pipes 7115 of the heating light source assembly 711 may be uniformly distributed on the other side of the surface of the heating light source assembly 711 where the light source 7113 is located, and the cooling water pipes 7125 of the window assembly 712 may also uniformly surround the entire glass. It should be emphasized that the heater shown in figure 7E can not only heat the graphite plate in the faraday cup that receives the ion beam, but also must not directly face the internal components it is intended to heat. Since the heater shown in fig. 7E is heated by electromagnetic radiation, whatever interior components are heated, regardless of the geometry of the heated interior components relative to the window assembly 712, so long as they are illuminated by electromagnetic radiation passing through the window assembly 712. Although, to improve efficiency, it is ensured that the electromagnetic radiation passing through the window assembly 712 can adequately heat the internal components, a heater such as that shown in FIG. 7E is more suitable for heating internal components near the walls of the reaction chamber. That is, although fig. 7E shows faraday cup 714 and bottom plate 713 as the interior components that are heated to remove fluorinated material, in practice, a combination of heating light source assembly 711 and window assembly 712 may be used to heat treat a variety of different interior components.

Compared to the embodiment shown in fig. 7B, the embodiment shown in fig. 7E has other advantages, such as that structural damage or even particles falling into the vacuum environment inside the reaction chamber during heating due to the difference of thermal expansion coefficients between the metal sheet 706 and the graphite plate 707, which are in contact with each other, can be avoided, such as that contamination and interference caused by the emission of electrons from the metal sheet 706 when current flows through the heating chamber can be avoided. Clearly, the hardware design shown in fig. 7E further reduces the risk of particle contamination of faraday cup 714 and ensures proper operation of faraday cup 714 when the purpose is to heat the graphite plate of faraday cup 714 that is being implanted by the ion beam to eliminate fluorinated material on the surface of the graphite plate that is generated by the use of a fluorine-containing ion beam. In the situation shown in fig. 7E, since the heating light source assembly 711 is located in the atmosphere outside the reaction chamber, even if any structural damage or particle dropping occurs during the operation thereof, the particles will not drop into the reaction chamber. Moreover, in the situation shown in FIG. 7E, not only does the light source 7113 not emit electrons due to the current flowing through the heating light source assembly 711 when it is operating normally, but the emission of electrons due to the abnormal operation of the light source 7113 is effectively blocked by the window assembly 712 and the chamber wall, so as to ensure that the measurement result of the Faraday cup 714 will not be biased due to the received electrons.

In addition, the heater configuration described above may also be used to heat other internal components, such as pores and electrodes, since the temperature regulation mechanism is not related to the function of the internal components. Incidentally, in some ion implanters, heating the magnet may significantly alter the magnetic field, such that it is generally a trend not to use a heater to heat the magnet. In any event, if the heater is properly designed, the present invention may still choose to heat the magnet to volatilize fluorinated material formed therein if the magnetic field is properly adjusted and/or the defects caused by the fluorinated material are severe. Further, for some internal components that can generate magnetic and/or electric fields, the number of ions that strike their surface is relatively small (significantly less than the number of ions that strike the back plate of the faraday cup), and the formation of fluorinated surfaces is relatively slow. In other words, in addition to the faraday cup back plate, a heater is typically used to heat the aperture to volatilize the fluorinated material.

Further, it is advantageous to monitor the efficacy of the embodiments discussed above. This can be done by existing means, such as vacuum measuring devices, or preferably by using proximity sensors. For example, known residual gas analysis is well suited for such purposes, as it allows for monitoring of the gaseous products produced by these embodiments. For example, the supply of hydrogen gas can be temporarily stopped, so as to compare the output of the detector with the output of the detector when hydrogen gas is supplied and the output of the detector when hydrogen gas is not supplied, and further determine whether to supply hydrogen gas again or even how much fluorinated material remains and needs to be cleaned. Other forms of in-situ sensing are also valuable, such as thin film sensors or fluorine sensitive surfaces that can be heated or cooled to monitor changes in fluorine-related surface properties.

The foregoing description is of the preferred embodiment of the invention and it is noted that numerous improvements and modifications may be devised by those skilled in the art without departing from the principles of the invention. Such improvements and modifications are also considered within the scope of this invention.

Claims

1. A method of cleaning a fluorinated surface within an ion implanter, comprising:

providing an ion beam source for a boron-containing ion beam within an ion implanter; and

the boron-containing ion beam is transported from the ion beam source to an inner member having a fluorinated surface, whereby the boron-containing ion beam is directed to the fluorinated surface.

2. The method of claim 1, further comprising the steps of:

the trajectory and profile of the boron-containing ion beam output from the ion beam source is adjusted to increase the probability of thoroughly removing fluorinated material formed on the interior component having a fluorinated surface.

3. The method of claim 2, wherein the step of adjusting the trajectory and profile of the boron-containing ion beam output from the ion beam source comprises:

increasing a size of the boron-containing ion beam to adjust a profile of the boron-containing ion beam output from the ion beam source; and/or

The boron-containing ion beam is oscillated to adjust a profile of the boron-containing ion beam output from the ion beam source.

4. The method of claim 1, wherein the boron-containing ion beam comprises a boron ion beam, the method further comprising:

after each ion implantation with a fluorine-containing ion beam, a cleaning is performed with the boron ion beam.

5. The method of claim 4, wherein the boron ion beam has an energy of between 1Kev and 40Kev and a current of 5 microamperes, and the cleaning is performed by heating the internal element to a temperature of 250 degrees Celsius to 300 degrees Celsius.

6. The method of claim 4, wherein the boron-containing ion beam further comprises a boron difluoride ion beam, the method further comprising:

after every several times of cleaning by using the boron ion beam, cleaning is performed by using the boron difluoride ion beam, and then ion implantation by using the fluorine-containing ion beam and cleaning by using the boron ion beam are alternately performed.

7. The method of claim 6, wherein the fluorine-containing ion beam is a fluorine ion beam having an energy of not more than 1Kev, the boron ion beam has an energy of between 1Kev and 40Kev, the boron difluoride ion beam has an energy of between 1Kev and 40Kev, and the single cleaning time with the boron difluoride ion beam is longer than the single cleaning time with the boron ion beam.

8. The method of claim 1, further comprising the steps of:

providing a temperature adjustment device corresponding to the inner element having the fluorinated surface while providing an ion beam source of the boron-containing ion beam; and

adjusting the temperature of the internal component using the temperature adjustment device to accelerate a reaction rate of a fluorinated material and the boron-containing ion beam with respect to each other.

9. The method of claim 8, wherein the step of using the temperature regulating device to regulate the temperature of the internal element comprises at least one of:

adjusting a temperature of the internal element using at least one of contact heating, non-contact heating, contact cooling, and non-contact cooling;

directing a current through the internal element to regulate a temperature of the internal element; and

adjusting the temperature of the internal element by direct radiative cooling of the internal element.

10. The method of claim 9, wherein the step of adjusting the temperature of the internal element using at least one of contact heating, non-contact heating, contact cooling, and non-contact cooling comprises at least one of:

adjusting a temperature of the internal element using an electric heater in direct contact with the internal element;

adjusting the temperature of the inner element by flowing a heating fluid directly through the inner element;

adjusting the temperature of the inner element by flowing a cooling fluid directly through the inner element;

adjusting a temperature of the internal element using at least one of an infrared lamp, an ultraviolet lamp, a visible light lamp, a thermal wire, a laser, and a light source capable of emitting electromagnetic radiation;

bringing the internal component and the cooled hardware into contact with each other to regulate the temperature of the internal component;

conditioning the temperature of the internal element adjacent to a dummy plate;

using a graphite heater to regulate the temperature of the internal element, wherein a holder is used to block heat from the graphite heater and a through hole is used to provide bridging of the heat pipe and the cable line between a vacuum environment and an atmospheric environment;

adjusting the temperature of the internal element using a metal sheet that generates heat when current flows, embedded between two sheets of graphite plates;

adjusting the temperature of the internal element using a heater located outside the reaction chamber; and

the temperature of the internal component is adjusted by using a heating light source assembly positioned outside the reaction chamber, wherein a plurality of light sources are arranged on one surface of the heating light source assembly facing the internal component, and a window assembly is embedded in the wall of the reaction chamber and directly faces the heating light source assembly, so that the electromagnetic radiation emitted by the light sources can reach the internal component positioned inside the reaction chamber through the window assembly, and the temperature of the internal component is adjusted.

11. The method of claim 1, wherein the internal element is selected from one of: a faraday cup, a chuck, an aperture, an electrode, a magnet, a mass analyzer, and any combination thereof.

12. An apparatus for cleaning fluorinated surfaces within an ion implanter, comprising:

an ion beam source configured to provide a boron-containing ion beam within an ion implanter and to deliver the boron-containing ion beam to an internal component having a fluorinated surface, whereby the boron-containing ion beam is directed at the fluorinated surface.

13. The apparatus of claim 12, wherein the ion beam source is a gas bottle or a gas supply line for providing the gaseous material comprising boron particles.

14. An apparatus for cleaning fluorinated surfaces within an ion implanter, comprising:

a temperature adjustment device configured to adjust a temperature of an internal element that generates a fluorinated surface when the ion implanter performs ion implantation using a fluorine-containing ion beam;

here, the internal element is selected from one of the following: a faraday cup, a chuck, an aperture, an electrode, a magnet, a mass analyzer, and any combination thereof;

here, the temperature adjusting means adjusts the temperature of the internal element in a manner selected from one of the following: contact heating, non-contact heating, contact cooling, non-contact cooling, and any combination thereof.

15. The apparatus of claim 14, wherein the material of the inner member is selected from one of the following: graphite, carbon, silicon, and any combination thereof.

16. The apparatus of claim 14, wherein the temperature regulating device adjusts the temperature of the internal component in a manner selected from one of: an electric heater in direct contact with the internal component, directing an electric current through the internal component itself, passing a heating fluid directly through the interior of the internal component, an infrared lamp, an ultraviolet lamp, a visible light lamp, a thermal wire, a laser, or other light source capable of generating electromagnetic radiation, passing a cooling fluid directly through the interior of the internal component, contacting the internal component with a component that has been cooled by the fluid, cooling the internal component by direct radiation, contacting the internal component with cooled hardware, placing the internal component adjacent to a cold dummy board, and any combination thereof.

17. A method of cleaning a fluorinated surface within an ion implanter, comprising:

providing a temperature adjustment device, wherein the temperature adjustment device corresponds to at least one internal element of the ion implanter; and

the temperature of the inner member is adjusted using a temperature adjustment device to volatilize the fluorinated material from the fluorine-containing surface of the inner member.

18. The method of claim 17, further comprising at least one of:

adjusting the temperature of the internal components by using a temperature adjusting device while performing ion implantation by using a fluorine-containing ion beam;

adjusting the temperature of the internal element using a temperature adjusting device after forming a fluorinated material of the internal element by ion implantation using a fluorine-containing ion beam; and

the temperature adjusting device is used to adjust the temperature of the internal element while at least one of the hydrogen-containing ion beam, the boron-containing ion beam and the hydrogen-containing particles is used to clean fluorinated material previously formed in the internal element by ion implantation using the fluorine-containing ion beam.

19. The method of claim 18, further comprising at least one of:

adjusting the temperature of the internal element using at least one of contact heating, non-contact heating, contact cooling, and non-contact cooling;

adjusting the temperature of the internal element using an electric heater in direct contact with the internal element;

directing a current through the internal element to regulate a temperature of the internal element;

adjusting the temperature of the inner element by passing a heating fluid directly through the inner element;

adjusting the temperature of the internal components using at least one of an infrared lamp, an ultraviolet lamp, a visible light lamp, a thermal wire, a laser, and a light source capable of emitting electromagnetic radiation;

adjusting the temperature of the internal component by bringing the internal component and the fluid-cooled hardware into contact with each other;

regulating the temperature of the internal component by direct radiative cooling of the internal component;

adjusting the temperature of the internal element adjacent to the dummy plate;

using a graphite heater to regulate the temperature of the internal components, where the holder is used to block heat from the graphite heater and the through-holes are used to provide bridging of the heat pipe and the cable lines between the vacuum environment and the atmospheric environment;

adjusting the temperature of the internal element using a metal sheet that generates heat when current flows, embedded between two sheets of graphite;

adjusting the temperature of the internal components using a heater located outside the reaction chamber; and

the interior component is conditioned using a heating light source assembly located outside the chamber, where a plurality of light sources are present on a side of the heating light source assembly facing the interior component, and where a window assembly is embedded in a wall of the chamber directly facing the heating light source assembly, thereby allowing electromagnetic radiation emitted by the light sources to pass through the window assembly to reach the interior component located inside the chamber, thereby conditioning the temperature of the interior component.