CN103515172A - Ion beam irradiation apparatus and operation method thereof - Google Patents
Ion beam irradiation apparatus and operation method thereof Download PDFInfo
- Publication number
- CN103515172A CN103515172A CN201310081172.1A CN201310081172A CN103515172A CN 103515172 A CN103515172 A CN 103515172A CN 201310081172 A CN201310081172 A CN 201310081172A CN 103515172 A CN103515172 A CN 103515172A
- Authority
- CN
- China
- Prior art keywords
- ion beam
- substrate
- beam irradiation
- irradiation apparatus
- cleaning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/48—Ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/026—Means for avoiding or neutralising unwanted electrical charges on tube components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/24—Circuit arrangements not adapted to a particular application of the tube and not otherwise provided for
- H01J37/243—Beam current control or regulation circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/244—Detectors; Associated components or circuits therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32862—In situ cleaning of vessels and/or internal parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
Abstract
The invention provides an ion beam irradiation apparatus and an operation method thereof; the ion beam irradiation apparatus can be cleaned so as to greatly improve the operation rate of the apparatus. The ion beam irradiation apparatus comprises a substrate conveying portion (102) arranged between a box (7) and a processing chamber (5) and used for carrying out a plurality of substrate replacing works for unprocessed substrates and the substrate processed by the ion beam irradiation; the ion beam irradiation apparatus also comprises an ion beam supply portion (101) providing ion beam (3) for the processing chamber (5); in parallel with at least one time of substrate replacing work, the operation parameters of the ion beam supply portion (101) is set and changed, and the inner side of the ion beam supply portion is cleaned.
Description
Technical field
Thereby the present invention relates to irradiate the cleaning of ion beam to the ion beam irradiation apparatus of described substrate enforcement ion beam irradiation processing to silicon wafer or glass substrate.
Background technology
In ion implantation apparatus, ion doping device and ion beam orienting device beam-plasma irradiation unit, if continuously carry out drawing from ion source for a long time the running of ion beam, can be on the electrode that forms ionogenic extraction electrode system adventitious deposit.If do not process described deposit, can cause interelectrode paradoxical discharge.
If the frequency of described paradoxical discharge increases, can cause can not holdout device normal operation.Therefore, need the running of arresting stop termly, and remove the deposit that becomes paradoxical discharge reason.
As removal, be attached to the sedimental example on electrode, proposed a kind of by between purge gas iontophoresis electrode and make described purge gas produce the method (patent documentation 1) of glow discharge between electrode.
Prior art document
Patent documentation 1: No. 2012-38668, Japanese Patent Publication communique JP (Fig. 1, Fig. 2,0029 section, 0040 section)
In the method for patent documentation 1, although can expect to remove deposit, the valve of using while cutting out ionogenic maintenance inspection operation cleans electrode.Conventionally, after the running of arresting stop, carry out ionogenic maintenance inspection operation.Therefore, although can expect cleaning performance, because clean after the common running of temporary transient arresting stop, so need to set the special time.
With not cleaning completely, the situation of device continuous operation is compared, utilized the method for recording in patent documentation 1 to clean electrode, can make the operating condition of device stable, therefore can improve the running rate of device on long terms.Yet, because the time that exists device to shut down, so there is limit in raising unit service factor.
Summary of the invention
Therefore, main purpose of the present invention is to provide the new ion beam irradiation apparatus of the running rate that can improve significantly than technology in the past ion beam irradiation apparatus and the method for operation of ion beam irradiation apparatus.
The invention provides a kind of ion beam irradiation apparatus, it comprises: box, for taking in a plurality of substrates; Process chamber carries out ion beam irradiation processing to described substrate in this process chamber; Substrate delivery section is carried out repeatedly substrate and is changed between described box and described process chamber, and described substrate replacing is that the untreated substrate to being accommodated in described box is changed with the substrate of the processing of processing through ion beam irradiation in described process chamber; And ion beam supply unit, produce ion beam, and supply with described ion beam in described process chamber, change job parallelism ground with the substrate at least one times that the repeatedly substrate that undertaken by described substrate delivery section is changed in operation, the operating parameters of described ion beam supply unit is set and changed and to cleaning in described ion beam supply unit.
According to described device, change with the substrate being undertaken by substrate delivery section the reason that job parallelism ground cancellation element running rate declines, therefore can improve significantly than technology in the past the running rate of device.
In addition, preferably, described ion beam irradiation apparatus also comprises storage device, and this memory device stores is useful on the cleaning operating parameters cleaning in described ion beam supply unit, in the time of in cleaning described ion beam supply unit, from described storage device, read described cleaning operating parameters.
According to this structure, when cleaning ion beam supply unit, without starting anew, regulate cleaning operating parameters.Thus, can fully guarantee to clean the required time, therefore can obtain enough cleaning performances.Its result, can make ion beam irradiation apparatus remain in operation with more stable state.
In addition, preferably, in described storage device, store a plurality of described cleaning operating parameters, according to the duration of runs of described ion beam irradiation apparatus, ion beam irradiation condition and any one in the discharge time of described ion beam supply unit generation, from described storage device, read described cleaning operating parameters.
If adopt this structure, can clean efficiently ion beam supply unit according to the operating condition of device.
After in cleaning ion beam supply unit, preferably by following manner, confirm whether regenerating of ion beam has normally carried out.Described mode is: described ion beam irradiation apparatus also comprises ion beam current measuring instrument, this ion beam current measuring instrument is arranged in described process chamber, electric current to described ion beam is measured, from finishing, the cleaning in described ion beam supply unit through after the stipulated time, start to utilize described ion beam current measuring instrument to measure.
Utilize this structure, can measure exactly ion beam current.And then, can shorten the required time of ion beam that regenerates, and the ion beam irradiation after can normally implementing, substrate being carried out is processed.
In addition, after in cleaning ion beam supply unit, regenerating smoothly of ion beam carried out, and prevent that the sedimental of reason that becomes electric discharge from adhering to, preferably, described ion beam supply unit comprises: plasma generates container, impurity gas imports this plasma and generates container, and the inside that generates container at this plasma generates plasma; And extraction electrode system, by a plurality of electrode groups, formed, for draw ion beam from the plasma generating in described plasma generates container, the import volume of the described impurity gas after the cleaning in described ion beam supply unit finishes and in importing described plasma generation container is drawn described ion beam by applying assigned voltage to described extraction electrode system after reaching ormal weight.
In addition, the invention provides a kind of method of operation of ion beam irradiation apparatus, described ion beam irradiation apparatus comprises: box, for taking in a plurality of substrates; Process chamber carries out ion beam irradiation processing to described substrate in this process chamber; Substrate delivery section is carried out repeatedly substrate and is changed between described box and described process chamber, and described substrate replacing is that the untreated substrate to being accommodated in described box is changed with the substrate of the processing of processing through ion beam irradiation in described process chamber; And ion beam supply unit, produce ion beam, and supply with described ion beam in described process chamber, the substrate at least one times that the method for operation of described ion beam irradiation apparatus is changed in operation described ion beam irradiation apparatus and the repeatedly substrate being undertaken by described substrate delivery section is changed job parallelism ground, to cleaning in described ion beam supply unit.
Change job parallelism with the substrate in substrate delivery section and carry out the reason of cancellation element running rate decline, so can improve significantly the running rate of device.
Accompanying drawing explanation
Fig. 1 is an example of the ion beam irradiation apparatus that uses in the present invention.
Fig. 2 means the flow chart of a series of processing of carrying out while conventionally turning round in ion beam irradiation apparatus of the present invention.
Fig. 3 is the example that the substrate that carries out in ion beam irradiation apparatus of the present invention is carried.
Fig. 4 is another example that the substrate that carries out in ion beam irradiation apparatus of the present invention is carried.
Fig. 5 is other examples that the substrate that carries out in ion beam irradiation apparatus of the present invention is carried.
Fig. 6 is the other different example that the substrate that carries out in ion beam irradiation apparatus of the present invention is carried.
Fig. 7 is another example of the ion beam irradiation apparatus that uses in the present invention.
Appearance when Fig. 8 represents from the ion beam irradiation apparatus of different directions observation Fig. 7 of 90 degree.
Fig. 9 is by schematic diagram after the generality of the ion beam irradiation apparatus using in the present invention.
Description of reference numerals
1 plasma generates container
2 extraction electrode systems
3 ion beams
4 substrates
5 process chambers
6 prechambers
7 boxes
Embodiment
With reference to the accompanying drawings the method for operation of ion beam irradiation apparatus of the present invention is described.
Fig. 1 represents the ion implantation apparatus IM1 as an example of ion beam irradiation apparatus.Simply described ion beam irradiation apparatus IM1 is described.Described ion beam irradiation apparatus IM1 generates to plasma such as boron trifluoride or hydrogen phosphide etc. of impurity gas 9(that container 1 imports as the generation source of ion beam 3), hot electron by never illustrated cathode emission makes described gas ionization, by with plasma generate container 1 disposed adjacent extraction electrode system 2(accelerating electrode 2a, extraction electrode 2b, suppress electrode 2c, grounding electrode 2d) draw ion beam 3, described ion beam irradiation apparatus IM1 is known as a kind of of bucket type ion source in the past.
By forming ionogenic plasma, generate the ion beam 3 that container 1 and extraction electrode system 2 draw and be irradiated to such as silicon wafer or glass substrate etc. of substrate 4(being configured in process chamber 5) on.At this, substrate 4 also has length in the direction of vertical paper, and this length is greater than the ion beam 3 that is irradiated on substrate 4 length in the same direction.In this case, by not shown drive unit, the side at vertical paper moves up substrate 4, thereby ion beam 3 is irradiated on whole of substrate 4.
Be configured in the box 7 in process chamber 5 outsides and taken in a plurality of substrates 4.By transfer robot 8, from described box 7, take out substrate 4 and moved in prechamber 6.Next, after making to become vacuum atmosphere in prechamber 6, substrate 4 is moved in process chamber 5.After having implemented the ion beam irradiation processing of substrate 4, the substrate of processing 4 is taken out of from process chamber 5, again moved in prechamber 6.Afterwards, make the atmosphere in prechamber 6 become atmospheric pressure, by transfer robot 8, from prechamber 6, take out the substrate 4 of processing, and be accommodated in box 7.
On the face (with the face of illustrated process chamber 5 opposition sides) between prechamber 6 and process chamber 5 and at the atmospheric side of prechamber 6, be provided with two valves that sky is isolated, not shown, and open or close according to the atmosphere in prechamber 6.In addition, in prechamber 6, be provided with as conditioning chamber in the vacuum pump etc. of mechanism of vacuum degree, this vacuum pump etc. is illustrated.In addition, between prechamber 6 and process chamber 5, be provided with the conveying devices such as vacuum robot for conveying substrate 4, described conveying device is arranged at any one party in prechamber 6 and process chamber 5.
Conventionally, with the same terms, the substrate 4 being accommodated in box 7 is irradiated to ion beam 3, therefore repeat the conveying of described substrate 4 and irradiate ion beam 3 to substrate 4, until all substrates 4 of taking in box 7 are completed to the irradiation of ion beam 3.The flow chart relevant to described a series of processing as shown in Figure 2.In addition, at this said the same terms, refer to that the condition such as ionic species, energy, exposure of the ion beam 3 being radiated on substrate 4 is identical.
With reference to Fig. 2, described processing is described.First, in treatment S 1, set the number of carrying out the substrate 4 of ion beam irradiation processing with the same terms.Next, in treatment S 2, the substrate of regulation number 4 is moved in process chamber 5.This regulation number refer to move in process chamber 5, once or carry out continuously the number of the substrate 4 of ion beam irradiation processing.Described number is more than one, and according to each ion beam irradiation processing unit, decides described number according to the structure of process chamber 5, prechamber 6, transfer robot 8 etc.
In treatment S 3, the substrate 4 starting moving in process chamber 5 irradiates ion beam 3.Afterwards, in treatment S 4, finish the irradiation to the ion beam 3 of substrate 4.After ion beam irradiation processing finishes, in treatment S 5, confirm whether the irradiation of the ion beam 3 of all substrates as processing object is through with.
In treatment S 5, if the irradiation of the ion beam 3 of all substrates 4 as processing object is through with, finish a series of processing.On the other hand, in treatment S 5, if be judged as, also have untreated substrate 4,, in treatment S 6, the substrate of processing and untreated substrate are carried out to substrate replacing.Described substrate replacing refers to and the substrate of processing 4 is accommodated in from process chamber 5 is taken out of to a series of substrate replacing operation of moving into process chamber 5 in box 7, by untreated substrate 4 from box 7 takes out.Substrate by treatment S 6 is changed, and untreated substrate 4 is moved in process chamber 5, and carry out treatment S 3 successively, treatment S 4 and treatment S 5.
In the present invention, at the substrate of described treatment S 6, change and the processing such as between operational period, clean.Substrate is changed between operational period, although ion beam irradiation apparatus is in operating condition, now without to the interior supply ion beam 3 of process chamber 5.That is, from the ion beam irradiation processing in process chamber 5 finish till next to the ion beam irradiation of the substrate 4 as irradiation object process start during can make ion beam 3 produce, also can make ion beam 3 not produce.In the present invention, effectively utilize this time slot to carry out cleaning of device inside etc.
About cleaning method, although can consider the whole bag of tricks, simple and efficient way can be enumerated method described below.
As shown in Figure 1, except being provided with, generate the impurity gas 9 that ion beam irradiation is processed the ion beam 3 of use, be also provided with in addition and be incorporated with such as hydrogen or argon gas etc. of purge gas 10() gas source.Based on this structure, after finishing the ion beam irradiation processing of substrate 4, stop immediately the generation of ion beam 3.In order to stop the generation of ion beam 3, if for example stop impurity gas 9 supply, stop the output of the not shown power supply that is connected with extraction electrode system 2 or the output of the power supply that stops being connected with not shown negative electrode.Afterwards, the operating parameters of ion beam irradiation apparatus is switched to cleaning operating parameters.That is,, through after switching to from common operating parameters and making operating parameters that the generation of ion beam 3 stops, carry out to the setting change of cleaning with operating parameters change.For the command signal of the carrying out described switching control device 20 that for example ion beam irradiation apparatus as shown in Figure 1 possesses, produce.
If switch to cleaning operating parameters, purge gas 10 is fed in plasma generation container 1.Afterwards, by generate the hot electron of the not shown cathode emission in container 1 from plasma, purge gas 10 generates container 1 internal ionization at plasma becomes plasmoid.Utilize described plasma, the deposit that generates the inside of container 1 and the surfaces such as accelerating electrode 2a, extraction electrode 2b of formation extraction electrode system 2 to being attached to plasma is peeled off.Described cleaning method is called as plasma clean, is the method being often used since in the past.
From starting cleaning, through after the stipulated time, for the substrate 4 to new carries out ion beam irradiation processing, temporary transient setting is altered to the operating parameters that cleaning is stopped, and then sets the operating parameters while being altered to common running.Like this, according to the feed status of substrate 4, the operating parameters when operating parameters while being switched to common running or cleaning, can utilize time slot to realize installing inner cleaning thus.
On the other hand, as cleaning method, can also use in patent documentation 1 cleaning method that utilizes glow discharge of recording or be that reactant gas imports to the cleaning method that plasma generates container 1 and extraction electrode system 2 etc. by fluorine.As for using which kind of method, need to take into account the time and the sedimental degree of adhesion that can be used in cleaning.
Fig. 3～Fig. 6 represents the conveying example of the substrate in ion beam irradiation apparatus.Fig. 3 is illustrated in the ion beam irradiation apparatus that possesses a transfer robot and a prechamber example of the conveying of conveying substrate 4 singly.For substrate 1, the illustrated arrow of substrate 2, be time shaft, the process of the direction indication time of arrow.
The point A recording on a time shaft～F each point is illustrated in the position of the substrate of certain time.First, substrate 1 is removed in box at an A.Afterwards, the substrate 1 of being carried by transfer robot is moved in prechamber at a B, and is taken out and move in process chamber from prechamber at a C.The substrate 1 enforcement ion beam irradiation of being moved in process chamber is processed, when substrate 1 point of arrival IBF, the ion beam irradiation processing of substrate 1 is finished.Afterwards, at a D, the substrate of processing 1 is transported in prechamber from process chamber, at an E, takes out of prechamber.Afterwards, at a F, substrate 1 is received in box.
On the other hand, after substrate 1 is received in box, at an A, by transfer robot, substrate 2 is taken out in box, at a B, substrate 2 is moved into prechamber.The processing of at each point, substrate 2 being carried out is afterwards identical with the described processing that substrate 1 is carried out.In addition, during point IBS on the time shaft that arrives substrate 2, start substrate 2 to carry out ion beam irradiation processing.
In described conveying example, the some IBF on the time shaft from illustrated substrate 1 cleans in T during the some IBS on the time shaft of substrate 2.
In addition, in the conveying example shown in Fig. 4～Fig. 6, also can apply the present invention.The meaning of a point A～F shown in each figure, some IBF and some IBS with in Fig. 3, illustrated identical, so omit repeat specification in the explanation of each figure.
In the conveying example of Fig. 4, in possessing the ion beam irradiation apparatus of two transfer robots and a prechamber, between box and prechamber, be provided with two transfer robots, and the relation of the substrate transport path that makes each transfer robot in upper-lower position and non-interference.Thus, between box and prechamber, can utilize each transfer robot to carry two substrates simultaneously.As shown in the figure, even carry example at this, also duration of existence T, therefore can utilize this time to carry out the cleaning of device.
In the conveying example of Fig. 5, except possessing two transfer robots, also possess two prechambers corresponding with each transfer robot respectively.At this, carry in example, to process chamber, move into substrate and from process chamber, take out of substrate and carry out respectively by each prechamber.Therefore, can when substrate 1 is taken out of process chamber, substrate 2 be moved into process chamber.
In addition, the conveying example of Fig. 6 is that hypothesis has increased the situation of substrate number on the basis of the conveying example of Fig. 5.At this, carry in example, substrate is carried by twos simultaneously or continuously.In addition, in process chamber also to each substrate simultaneously or irradiate successively ion beam.According to the ion beam irradiation method to substrate, some difference of meaning of the some IBF in the conveying example of Fig. 6, some IBS, below describes this point.
When a plurality of substrates are carried out to ion beam irradiation while processing simultaneously, with narrate identical, the moment that the ion beam irradiation processing of substrate is finished is to put an IBF.In addition, the ion beam irradiation of substrate being processed to the moment starting is some IBS.
On the other hand, when a plurality of substrates are carried out to ion beam irradiation processing successively, some IBF represents the moment that the ion beam irradiation processing of the substrate of last (second shown in Fig. 6) processing is finished.In addition, some IBS represents the ion beam irradiation of initially treated substrate to process the moment starting.
As shown in Figure 5, Figure 6, though in such conveying example also duration of existence T.Therefore, in such conveying example, also can utilize described during T carry out the cleaning of device inside.In addition, the number that is transported to the substrate in process chamber can be also more than three.Now, the meaning that some IBF and some IBS represent is applicable to the meaning illustrating in the conveying example of Fig. 6.
In the structure of the ion beam irradiation apparatus IM1 of Fig. 1, by limit moving substrate 4 limits, to its whole, irradiate ion beam 3, but when a plurality of substrates 4 being carried out simultaneously to ion beam irradiation processing, can consider for example to use the area of the ion beam 3 with generation to be greater than the ionogenic ion beam irradiation apparatus of whole of the substrate 4 being irradiated by ion beam 3, carry out the device shown in alternate figures 1.
As cleaning method, can consider to adopt as mentioned above several different methods, but operating parameters during the common running of deionization beam irradiation apparatus, also can wait and obtain the operating parameters that can carry out the device of most suitable cleaning according to experiment in advance, and be stored in ion beam irradiation apparatus.
Conventionally, in ion beam irradiation apparatus, be provided with the control device (example control device 20 as shown in Figure 1) of control device running, therefore can consider that the part in described control device is provided as the function of storage device, or outside control device, storage device is set in addition.Store washing operating parameters in described storage device in advance, and during by control device, read the cleaning operating parameters being stored in storage device in T, carry out the cleaning of ion beam irradiation apparatus.
As cleaning operating parameters, because the cleaning method using exists various parameters.For example, if the plasma clean of narrating above, the flow of purge gas, flow through the magnitude of current of negative electrode and be applied to plasma and generate magnitude of voltage on container etc. and be equivalent to described cleaning operating parameters.
If adopt described method, during each cleaning device, without starting anew, regulate cleaning operating parameters.Thus, can fully guarantee to clean the required time, therefore can obtain enough cleaning performances.Its result, can make ion beam irradiation apparatus remain in operation with more stable state.
In addition, can consider the discharge time that occurs in the duration of runs, ion beam irradiation condition or the ion beam irradiation apparatus according to ion beam irradiation apparatus etc., extend scavenging period, improve the plasma density producing while cleaning.Therefore, can consider to arrange in advance a plurality of cleaning operating parameters, and use respectively described cleaning operating parameters according to the state of device.
For the duration of runs of ion beam irradiation apparatus, the duration of runs is longer, sedimental amount also correspondingly increases, therefore can consider: for example, when duration of runs of total is every while having passed through three hours, just change cleaning operating parameters, produces the plasma that density is higher or extends scavenging period.In addition, in the situation that with operating parameters be modified to other cleaning for operating parameters with operating parameters from the cleaning of standard by cleaning according to condition, when the arresting stop while implementing special cleaning for maintenance inspection, also can with operating parameters, switch to the cleaning operating parameters as standard setting using cleaning.
In addition, consider the kind because of the impurity gas for generation of ion beam, sedimental kind also can be different, therefore multiple purge gas can be set, for example, according to the kind of impurity gas, switch the kind of purge gas.
For discharge time, can consider monitoring stream always through form extraction electrode system electrode the magnitude of current and be applied to the magnitude of voltage on electrode, and relatively monitor value and the in advance fiducial value of setting, when surpassing described fiducial value, regard as and produced electric discharge, and discharge time is counted.In addition, also can the cleaning as standard setting be suitably modified to according to described discharge time to other cleaning operating parameters with operating parameters.
In addition, utilize in Fig. 3～Fig. 6, illustrate during the cleaning carried out of T can not be also when substrate replacing each time, occur during all carry out in T, but utilization occur stipulated number (for example twice or three times) during after T during T clean.That is, during a plurality of substrates in processing is accommodated in a box, owing to carrying out repeatedly substrate, change, during occurring in the time of therefore can utilizing wherein substrate at least one times to change, T cleans.Certainly, also can when each substrate is changed, clean, can improve being like this deposited on the sedimental removal effect of device inside.
Fig. 7 and Fig. 8 represent another example of ion beam irradiation apparatus.Appearance when Fig. 7 represents to observe from the side ion beam irradiation apparatus IM2, appearance when Fig. 8 represents to observe ion beam irradiation apparatus IM2 from top.In these figure, for the parts identical with the parts shown in Fig. 1, used identical Reference numeral.The ion beam irradiation apparatus IM2 that Fig. 7 and Fig. 8 represent is the quality analysis type ion beam irradiation apparatus that possesses quality analysis electromagnet 11 and analyze slit 13.This ion beam irradiation apparatus IM2 also possesses ion beam current measuring instrument 14.By described ion beam current measuring instrument 14, ion beam current to ion beam 3 is measured, and according to the operating parameters of the measurement result adjusting ion beam irradiation apparatus IM2 measuring, make to obtain desirable ion beam current amount and ion beam current density and distribute.
In the inside of quality analysis electromagnet 11, be provided with the analyzer tube 12 for the protection of electromagnet inside.Composition beyond the desirable ion that should irradiate to substrate 4 does not collide with the inwall of analyzer tube 12 by quality analysis electromagnet 11, be attached to thus on the inwall of analyzer tube 12 or the inwall of analyzer tube 12 is carried out to sputter, becoming in the unwanted sedimental reason of the interior generation of analyzer tube 12.
There is following problems: repeat to occur repeatedly during described collision, can make deposit become bulk, deposit can be because disperse to process chamber 5 sides with undesirable ion collision sometimes.When dispersing to process chamber 5 side, can sneak into substrate 4 with the ion of ion beam 3 heterogeneities of irradiating to substrate 4, the manufacture that therefore can cause occurring substrate 4 is bad.When generation manufacture is bad, need to stop ion beam irradiation apparatus, eliminate and cause the operation of manufacturing bad reason.But carry out this operation, existence can cause the problem that the running rate of ion beam irradiation apparatus declines.
In order to prevent, because described manufacture is bad, cause the decline of the running rate of ion beam irradiation apparatus, can consider to utilize following method to remove the deposit in analyzer tube 12: for example, adjusting is applied to and forms the accelerating electrode 2a of extraction electrode system 2 and the magnitude of voltage on extraction electrode 2b, make the size of the ion beam 3 of drawing be greater than common size, intentionally make the inwall collision of this ion beam and analyzer tube 12, or the magnitude of current of the not shown coil of quality analysis electromagnet 11 is flow through in adjusting, intentionally make the direct of travel of the ion beam 3 of drawing towards the direction of the inwall collision with analyzer tube 12.
So intentionally make ion beam 3 and the inwall of analyzer tube 12 collide, the deposit that can make to be deposited in analyzer tube 12 disperses to process chamber 5 sides.The deposit dispersing by vacuum pump 15 suctions, removes deposit thus from the common flight path of ion beam 3.
When cleaning analyzer tube 12 is interior, can utilize purge gas 10 to produce ion beams 3, also can utilize the impurity gas 9 using in common ion beam irradiation is processed to produce ion beams 3.When utilizing impurity gas 9, do not need purge gas 10, therefore have advantages of and do not need configuration import purge gas 10 mechanism and configure the required space of this mechanism.The cleaning of this analyzer tube 12 also can illustrate at the example by Fig. 3～Fig. 6 during carry out in T.
When utilizing purge gas 10 to clean, do not produce for substrate 4 being carried out to the ion beam 3 of ion beam irradiation processing.Therefore, in order to re-start ion beam irradiation after cleaning, process, need to regenerate ion beam 3.When regenerating ion beam 3, can consider following method.
When regenerating ion beam 3, ion beam current is in an unsure state in during certain.This is because following reason causes: the flow that imports the impurity gas 9 in plasma generation container 1 is not fully supplied with; Even if utilize pump to carry out exhaust, but also remain purge gas 10 in during certain on the transport path of ion beam 3, and the ion beam 3 regenerating and residual purge gas collision; Etc..
When measuring unsettled ion beam current with ion beam current measuring instrument 14, can cause thinking by mistake the ion beam 3 that there is no to produce the magnitude of current that irradiate to substrate 4, thereby cause ion beam irradiation apparatus to produce rub-out signal and cause the running of device to stop.In addition, when ion beam irradiation apparatus possesses when substrate 4 being implemented to ion beam irradiations and regulating the various parameters relevant with device running to regulate thus the function of ion beam current amount and ion beam current density distribution before processing, due to unsettled ion beam current is measured, so there is the problem that can not finish smoothly of controlling.
In order to solve described problem, in the present invention, from cleaning end, through after the stipulated time, measure ion beam current.In this said stipulated time, refer in advance and wait the time of obtaining by experiment, and be to finish to play the time till ion beam current becomes in fact stable state from cleaning.By adopting this scheme, can milli realize being without barrier connected on to clean regenerating the ion beam irradiation that the processing of ion beam and ion beam that utilization regenerates carry out after finishing and process.
In addition, before the process stipulated time, the state that also can irradiate to ion beam current measuring instrument 14 in ion beam 3.In this case, be set as using through the measured value after the stipulated time as the measured value of ion beam current.In addition, although in the example of Fig. 7 and Fig. 8, ion beam current measuring instrument 14 is fixed on the assigned position in process chamber 5, replaces therewith, also can use the portable ion beam current measuring instrument of the exposure pathways that can pass in and out ion beam 3.
In addition, while regenerating ion beam 3 after cleaning, because the flow of impurity gas 9 is insufficient, so if draw ion beam 3 under such state, can make the major part of ion beam 3 and the extraction electrode 2b collision of formation extraction electrode system 2 of drawing.The collision of ion beam 3 and extraction electrode 2b becomes and on extraction electrode 2b, generates sedimental reason.
In order to eliminate this reason, in the present invention, after the import volume of the impurity gas 9 after cleaning and in importing plasma generation container 1 is stable, draw ion beam.In addition, whether stable about generate the import volume of impurity gas 9 of container 1 interior importing to plasma, can test in advance, measure and need how long can draw stable ion beam, and draw ion beam 3 according to the time of measuring.
Other variation
Example as the ion beam irradiation apparatus using in described the present invention so far, be the ion beam irradiation apparatus that box 7 is configured in the type of atmospheric side, but ion beam irradiation apparatus of the present invention also can adopt box 7 to import the ion beam irradiation apparatus of the type in prechamber 6.In this case, identical with described example so far, can when the substrate of changing untreatment base and processing, clean, also can be unlike this, when replacing is taken in the box 7 of the substrate of processing and taken in the box 7 of untreated substrate, carry out the cleaning of device inside.
In addition, the ion beam irradiation under the same terms is processed, and just to being accommodated in a substrate in box, does not carry out, and sometimes to relating to the substrate being accommodated in a plurality of boxes, carries out.The present invention also can carry out when ion beam irradiation is processed using at this substrate that is accommodated in a plurality of box kinds to relating to.
In addition,, as the applicable ion beam irradiation apparatus of the present invention, can consider it to carry out various distortion.Using the applicable ion beam irradiation apparatus of the present invention during as general unit describe, the applicable ion beam irradiation apparatus of the present invention becomes the device that schematic diagram as shown in Figure 9 represents.As the example of the applicable ion beam irradiation apparatus of the present invention, it comprises: box 7, taken in a plurality of substrates 4; Process chamber 5, carries out ion beam irradiation processing to substrate 4 this process chamber 5 is interior; Substrate delivery section 102(is equivalent to the part consisting of transfer robot 8, prechamber 6 and not shown vacuum robot etc.), the substrate carrying out between box 7 and process chamber 5 is repeatedly changed, and it is to being accommodated in the untreated substrate in box 7 and changing at the substrate of the interior processing of processing through ion beam irradiation of process chamber 5 that described substrate is changed; And ion beam supply unit 101(is equivalent to generate by plasma the part that container 1, extraction electrode system 2 and analysis electromagnet 11 etc. form), produce ion beam 3, and to the interior supply ion beam 3 of process chamber 5.
In this ion beam irradiation apparatus, change job parallelism with the substrate at least one times in the repeatedly substrate replacing operation of being undertaken by substrate delivery section 102 and carry out the cleaning in ion beam supply unit 101, therefore can significantly improve the running rate of device.
In addition, in the present invention, change job parallelism and carry out the cleaning in ion beam supply unit 101 with substrate, but change and between operational period, always clean etc. at this said parallel substrate that is not illustrated in.That also can change operation at substrate finishes clean midway.In addition, as what illustrated in the example of Fig. 3～Fig. 6, in the present invention, also can change between operational period not carrying out substrate, clean.Strictly speaking, in the time of when the ion beam irradiation processing to substrate has just finished and before soon next substrate being carried out to ion beam irradiation processing, do not carry out substrate and change operation.At this moment in being about to start the state that substrate is changed operation or the substrate replacing end of job.Also can implement to clean etc. with overlapping time period in this period.That is the cleaning of, carrying out in the present invention needs only and at least part of time parallel that carries out the time of substrate replacing operation.
In addition, in said embodiment, the structure of electron collision type of take is illustrated generate the inner method that generates plasma of container 1 at plasma as example, but also can substitute this scheme by high-frequency type structure.In the situation that using high-frequency type structure, when stopping producing ion beam, as long as stop the output of the high frequency electric source that is connected with antenna, substitute the output that stops the power supply that is connected with negative electrode.
Except described mode, can certainly in the scope that does not depart from the technology of the present invention thought, carry out various improvement and distortion.
Claims (7)
1. an ion beam irradiation apparatus, is characterized in that,
Described ion beam irradiation apparatus comprises:
Box, for taking in a plurality of substrates;
Process chamber carries out ion beam irradiation processing to described substrate in this process chamber;
Substrate delivery section is carried out repeatedly substrate and is changed between described box and described process chamber, and described substrate replacing is that the untreated substrate to being accommodated in described box is changed with the substrate of the processing of processing through ion beam irradiation in described process chamber; And
Ion beam supply unit, produces ion beam, and supply with described ion beam in described process chamber,
Change job parallelism ground with the substrate at least one times that the repeatedly substrate that undertaken by described substrate delivery section is changed in operation, the operating parameters of described ion beam supply unit is set and changed and to cleaning in described ion beam supply unit.
2. ion beam irradiation apparatus according to claim 1, is characterized in that,
Described ion beam irradiation apparatus also comprises storage device, and this memory device stores is useful on the cleaning operating parameters cleaning in described ion beam supply unit,
In the time of in cleaning described ion beam supply unit, from described storage device, read described cleaning operating parameters.
3. ion beam irradiation apparatus according to claim 2, is characterized in that,
In described storage device, store a plurality of described cleaning operating parameters,
According to the duration of runs of described ion beam irradiation apparatus, ion beam irradiation condition and any one in the discharge time of described ion beam supply unit generation, from described storage device, read described cleaning operating parameters.
4. according to the ion beam irradiation apparatus described in any one in claims 1 to 3, it is characterized in that,
Described ion beam irradiation apparatus also comprises ion beam current measuring instrument, and this ion beam current measuring instrument is arranged in described process chamber, the electric current of described ion beam is measured,
From finishing, the cleaning in described ion beam supply unit through after the stipulated time, start to utilize described ion beam current measuring instrument to measure.
5. according to the ion beam irradiation apparatus described in any one in claims 1 to 3, it is characterized in that,
Described ion beam supply unit comprises:
Plasma generates container, and impurity gas imports this plasma and generates container, and the inside that generates container at this plasma generates plasma; And
Extraction electrode system, consists of a plurality of electrode groups, for draw ion beam from the plasma generating in described plasma generates container,
The import volume of the described impurity gas after the cleaning in described ion beam supply unit finishes and in importing described plasma generation container is drawn described ion beam by applying assigned voltage to described extraction electrode system after reaching ormal weight.
6. ion beam irradiation apparatus according to claim 4, is characterized in that,
Described ion beam supply unit comprises:
Plasma generates container, and impurity gas imports this plasma and generates container, and the inside that generates container at this plasma generates plasma; And
Extraction electrode system, consists of a plurality of electrode groups, for draw ion beam from the plasma generating in described plasma generates container,
The import volume of the described impurity gas after the cleaning in described ion beam supply unit finishes and in importing described plasma generation container is drawn described ion beam by applying assigned voltage to described extraction electrode system after reaching ormal weight.
7. a method of operation for ion beam irradiation apparatus, is characterized in that,
Described ion beam irradiation apparatus comprises:
Box, for taking in a plurality of substrates;
Process chamber carries out ion beam irradiation processing to described substrate in this process chamber;
Substrate delivery section is carried out repeatedly substrate and is changed between described box and described process chamber, and described substrate replacing is that the untreated substrate to being accommodated in described box is changed with the substrate of the processing of processing through ion beam irradiation in described process chamber; And
Ion beam supply unit, produces ion beam, and supply with described ion beam in described process chamber,
The substrate at least one times that the method for operation of described ion beam irradiation apparatus is changed in operation described ion beam irradiation apparatus and the repeatedly substrate being undertaken by described substrate delivery section is changed job parallelism ground, to cleaning in described ion beam supply unit.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012-140475 | 2012-06-22 | ||
| JP2012140475 | 2012-06-22 | ||
| JP2012-267674 | 2012-12-06 | ||
| JP2012267674A JP5672297B2 (en) | 2012-06-22 | 2012-12-06 | Ion beam irradiation apparatus and operation method of ion beam irradiation apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103515172A true CN103515172A (en) | 2014-01-15 |
| CN103515172B CN103515172B (en) | 2016-07-20 |
Family
ID=49897715
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310081172.1A Active CN103515172B (en) | 2012-06-22 | 2013-03-14 | The method of operation of ion beam irradiation apparatus and ion beam irradiation apparatus |
Country Status (2)
| Country | Link |
|---|---|
| KR (1) | KR101521416B1 (en) |
| CN (1) | CN103515172B (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105762100A (en) * | 2014-12-17 | 2016-07-13 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Substrate transfer method for vacuum processing equipment |
| CN106783497A (en) * | 2016-12-22 | 2017-05-31 | 信利（惠州）智能显示有限公司 | A kind of method of operation of ion implantation device |
| CN107039227A (en) * | 2015-11-13 | 2017-08-11 | 住友重机械离子技术有限公司 | The control method of ion generating means and ion generating means |
| CN109427522A (en) * | 2017-09-05 | 2019-03-05 | 日新离子机器株式会社 | Particulate diagnostic method and particulate diagnostic device |
| CN111739777A (en) * | 2019-03-25 | 2020-10-02 | 日新离子机器株式会社 | Ion beam irradiation apparatus and storage medium storing program for ion beam irradiation apparatus |
| CN112439747A (en) * | 2019-09-05 | 2021-03-05 | 日新离子机器株式会社 | Cleaning method for ion beam irradiation apparatus |
| CN113663988A (en) * | 2018-10-18 | 2021-11-19 | 汉辰科技股份有限公司 | Method and apparatus for cleaning fluorinated surfaces within an ion implanter |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02155147A (en) * | 1988-12-06 | 1990-06-14 | Tokyo Electron Ltd | Cleaning method of ion source and ion implantation device |
| US20090302214A1 (en) * | 2008-06-06 | 2009-12-10 | Nissin Ion Equipment Co., Ltd. | Ion implanting apparatus and method of correcting beam orbit |
| CN101859723A (en) * | 2009-04-01 | 2010-10-13 | 东京毅力科创株式会社 | Method for replacing plural substrates and substrate processing device |
| CN102376513A (en) * | 2010-08-11 | 2012-03-14 | 日新离子机器株式会社 | Cleaning method of ion source electrode |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07335616A (en) * | 1994-06-06 | 1995-12-22 | Hitachi Ltd | Wafer treatment device |
| KR100684910B1 (en) * | 2006-02-02 | 2007-02-22 | 삼성전자주식회사 | Apparatus for treating plasma and method for cleaning the same |
-
2013
- 2013-03-14 CN CN201310081172.1A patent/CN103515172B/en active Active
- 2013-04-05 KR KR1020130037479A patent/KR101521416B1/en active IP Right Grant
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02155147A (en) * | 1988-12-06 | 1990-06-14 | Tokyo Electron Ltd | Cleaning method of ion source and ion implantation device |
| US20090302214A1 (en) * | 2008-06-06 | 2009-12-10 | Nissin Ion Equipment Co., Ltd. | Ion implanting apparatus and method of correcting beam orbit |
| CN101859723A (en) * | 2009-04-01 | 2010-10-13 | 东京毅力科创株式会社 | Method for replacing plural substrates and substrate processing device |
| CN102376513A (en) * | 2010-08-11 | 2012-03-14 | 日新离子机器株式会社 | Cleaning method of ion source electrode |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105762100A (en) * | 2014-12-17 | 2016-07-13 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Substrate transfer method for vacuum processing equipment |
| CN107039227B (en) * | 2015-11-13 | 2020-03-03 | 住友重机械离子技术有限公司 | Ion generating apparatus and method for controlling ion generating apparatus |
| TWI698899B (en) * | 2015-11-13 | 2020-07-11 | 日商住友重機械離子技術有限公司 | Ion generating device and control method of ion generating device |
| CN107039227A (en) * | 2015-11-13 | 2017-08-11 | 住友重机械离子技术有限公司 | The control method of ion generating means and ion generating means |
| CN106783497B (en) * | 2016-12-22 | 2018-07-17 | 信利（惠州）智能显示有限公司 | A kind of method of operation of ion implantation device |
| CN106783497A (en) * | 2016-12-22 | 2017-05-31 | 信利（惠州）智能显示有限公司 | A kind of method of operation of ion implantation device |
| CN109427522A (en) * | 2017-09-05 | 2019-03-05 | 日新离子机器株式会社 | Particulate diagnostic method and particulate diagnostic device |
| CN109427522B (en) * | 2017-09-05 | 2022-02-08 | 日新离子机器株式会社 | Microparticle diagnosis method and microparticle diagnosis device |
| CN113663988A (en) * | 2018-10-18 | 2021-11-19 | 汉辰科技股份有限公司 | Method and apparatus for cleaning fluorinated surfaces within an ion implanter |
| CN113663988B (en) * | 2018-10-18 | 2023-09-05 | 汉辰科技股份有限公司 | Method and device for cleaning fluorinated surface in ion implanter |
| CN111739777A (en) * | 2019-03-25 | 2020-10-02 | 日新离子机器株式会社 | Ion beam irradiation apparatus and storage medium storing program for ion beam irradiation apparatus |
| CN111739777B (en) * | 2019-03-25 | 2023-10-31 | 日新离子机器株式会社 | Ion beam irradiation apparatus and storage medium storing program for ion beam irradiation apparatus |
| CN112439747A (en) * | 2019-09-05 | 2021-03-05 | 日新离子机器株式会社 | Cleaning method for ion beam irradiation apparatus |
| CN112439747B (en) * | 2019-09-05 | 2024-03-08 | 日新离子机器株式会社 | Method for cleaning ion beam irradiation device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103515172B (en) | 2016-07-20 |
| KR20140000142A (en) | 2014-01-02 |
| KR101521416B1 (en) | 2015-05-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103515172A (en) | Ion beam irradiation apparatus and operation method thereof | |
| US20110192820A1 (en) | Atomic layer etching apparatus and etching method using the same | |
| TWI631877B (en) | Plasma processing device | |
| KR102036944B1 (en) | Method of controlling adherence of microparticles to substrate to be processed, and processing apparatus | |
| DE102012200211A1 (en) | Device and method for surface treatment of a substrate | |
| WO2013118594A1 (en) | Charged particle beam apparatus | |
| TW201826315A (en) | Ion implantation method and ion implantation apparatus | |
| KR101453263B1 (en) | Ion implantation apparatus and operation method of ion implantation apparatus | |
| US8053747B2 (en) | Substrate processing apparatus and cleaning method of the same | |
| TWI728187B (en) | Workpiece processing apparatus for differential in situ cleaning | |
| TWI593473B (en) | Method of cleaning an esc | |
| JP5985362B2 (en) | Ion implantation apparatus and ion implantation method | |
| JP2019119921A (en) | Positioning method of charged object and static electricity removing device | |
| US8575574B2 (en) | Ion implanting system | |
| US20130001440A1 (en) | System and method for ion implantation with dual purpose mask | |
| KR102478688B1 (en) | Method for cleaning ion beam irradiation device | |
| TWI810614B (en) | Beamline ion implanter and method of operating beamline ion implanter | |
| KR102486192B1 (en) | Film forming method and film forming apparatus | |
| JP2005294310A (en) | Energy beam irradiating apparatus and pattern forming method using the same | |
| KR102500133B1 (en) | Film forming method and film forming apparatus | |
| KR102243549B1 (en) | Apparatus for generating heavy-ion beam and the method of the same | |
| JP2014143110A (en) | Ion injector | |
| CN116230476A (en) | Sample processing device using charged particles | |
| KR20190106014A (en) | Energy Filter and Ion Implantation System Having the Same | |
| DE102015009861A1 (en) | Substrate processing device and coating method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |