CN116230476A - Sample processing device using charged particles - Google Patents
Sample processing device using charged particles Download PDFInfo
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- CN116230476A CN116230476A CN202111627844.5A CN202111627844A CN116230476A CN 116230476 A CN116230476 A CN 116230476A CN 202111627844 A CN202111627844 A CN 202111627844A CN 116230476 A CN116230476 A CN 116230476A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/2202—Preparing specimens therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/2204—Specimen supports therefor; Sample conveying means therefore
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
- G01N23/2251—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident electron beams, e.g. scanning electron microscopy [SEM]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/18—Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/20—Means for supporting or positioning the objects or the material; Means for adjusting diaphragms or lenses associated with the support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/07—Investigating materials by wave or particle radiation secondary emission
- G01N2223/079—Investigating materials by wave or particle radiation secondary emission incident electron beam and measuring excited X-rays
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/30—Accessories, mechanical or electrical features
- G01N2223/307—Accessories, mechanical or electrical features cuvettes-sample holders
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/30—Accessories, mechanical or electrical features
- G01N2223/317—Accessories, mechanical or electrical features windows
Abstract
The present invention relates to a sample processing apparatus using charged particles, and more particularly, to a sample processing apparatus using charged particles, which is capable of improving efficiency of transferring charged particles to a sample by forming pores on a path irradiated to the sample for observing or processing the sample, and improving precision of processing and observation using charged particles by forming pore modules forming the pores with conductive materials and forming an electric field between the pores and the sample, and improving precision of processing and observation using charged particles by adjusting the path of charged particles.
Description
Technical Field
The present invention relates to a sample processing apparatus for processing a sample using charged particles. More particularly, the present invention relates to a sample processing apparatus using charged particles, which can prevent scattering caused by collision of charged particles with air particles in the atmosphere to the maximum extent when a sample is processed under atmospheric pressure in an apparatus for precisely processing a sample using charged particles.
Background
Recently, there is an increasing demand for precision processing of samples due to high adhesion of displays and semiconductors. Therefore, the conventional laser processing cannot be performed precisely, or is limited by the material. This is because the laser processing is basically performed by thermal processing on a flexible substrate, and the sample is deformed by heat.
For this reason, processing using a Focused Ion Beam (FIB) is a topic, but processing using a Focused Ion Beam is generally used to basically perform physical processing in which ions collide with a sample, and processing is formed in a high vacuum chamber in order to precisely control the Ion Beam.
However, when processing is performed in the chamber, if the sample is a display panel having a large area, the chamber must be provided with a suitable large area, and therefore, there is a problem that not only the size of the apparatus increases but also the processable sample is limited, and a large amount of processing time is required because the sample is taken out after being moved into the chamber and processed.
Recently, a scanning electron microscope for observing a sample placed in the atmosphere is being studied, which is also applied to precisely observing a specific portion of a display to optimize a process of the display or to analyze a large area of the display under atmospheric pressure to analyze a composition of a foreign matter.
When a sample is processed in the atmosphere, there is an advantage that the size limitation of the sample, which is a disadvantage of processing in a chamber, and the time required for forming a vacuum for processing can be overcome, but there is a problem that the processing precision is limited and efficient processing is difficult because gas molecules of the atmosphere collide with charged particles and are scattered.
Since collisions between air molecules in the atmosphere and charged particles are a density problem, it is necessary to reduce the density of the atmospheric molecules and increase the Mean Free Path (Mean Free Path) for processing the sample to a desired extent by using charged particles in the atmosphere instead of using the inside of the vacuum chamber, or refocus the charged particles Scattered (Scattered) by collisions with the atmospheric molecules with the sample again, or remove the Scattered charged particles to the maximum, or remove the charged particles causing reflection collisions between the sample and the device to the maximum.
An electron penetration film protection device for preventing a reduction in the life of an electron penetration film and a scanning electron microscope provided with the same are disclosed in korean laid-open patent No. 2014-0027687, but since an electron penetration film is provided in each of the scanning electron microscopes disclosed in korean laid-open patent No. 2014-0027687, there is a problem in that maintenance of the electron penetration film is required, and it is impossible to prevent scattering, disappearance of secondary electrons, and the like from occurring due to the atmosphere between a sample and the electron penetration film, and there is a problem in that it is difficult to perform precise observation and processing.
Disclosure of Invention
Technical problem
The present invention has been made to solve the above-described problems, and an object of the present invention is to provide a sample processing apparatus which can improve efficiency of transporting charged particles to a sample by forming pores in a path irradiated to the sample in order to process the sample, and can improve processing precision by applying a voltage to the pores of a conductive material to form an electric field before the generated charged particles reach the sample after focusing the charged particles from an objective lens to the sample, and can prevent secondary processing after collision with the sample by applying a voltage to the pores of a multilayer structure to re-polymerize the charged particle path by adjusting the path of the charged particles.
Technical proposal for solving the problems
In order to achieve the above object, a sample processing apparatus according to the present invention is a sample processing apparatus for processing a sample under atmospheric pressure using charged particles, comprising: a sample placement stage on which a sample is placed for processing the sample at atmospheric pressure; a column section for releasing charged particles for processing a sample placed on the sample placement stage; a column housing which accommodates the column therein and irradiates the sample with charged particles released from the column; a pore module which is provided in a lower portion of the column housing with a conductive material and forms a pore on a path along which charged particles released from the column portion are irradiated to a sample; a power supply unit configured to supply power to the pore module so as to form an electric field between the pore module and the sample; and a control unit for controlling the power supply unit so as to adjust the electric field intensity formed between the pore module and the sample.
In addition, the control unit may form a positive voltage or a negative voltage in order to control the power supplied from the power supply unit to the aperture module to adjust the path of the charged particles to the aperture module.
In addition, the pore module includes two or more pore plates, which are stacked to be formed on the moving path of the charged particles, and the cross section of pores formed at the pore plate farthest from the sample is formed to be minimum.
In addition, the pore module is composed of three pore plates, and different voltages are applied to the lower pore plate and the central pore plate nearest to the sample, respectively.
In addition, a negative voltage is applied to the lower aperture plate and a positive voltage is applied to the central aperture plate.
In addition, the central aperture plate is formed of two aperture plates with a spacer member of non-conductive material interposed therebetween.
In addition, a positive voltage is applied to one of the two aperture plates, and the other is grounded.
The control unit controls the power supply unit according to the characteristics of the charged particles, the interval between the pore module and the sample, and the material of the sample, and adjusts the intensity of the electric field formed in the pore module.
Effects of the invention
The present invention constructed as described above applies a voltage to the pore module at the lower part of the column housing through which the charged particles pass, thereby preventing scattering when the charged particles are irradiated to the sample.
In addition, a positive voltage or a negative voltage is applied to the void module, so that it is possible to prevent the formation of a process only at a position where the process is required, and also to form a process at an unnecessary position.
Further, the aperture plate is provided in a plurality of layers and the cross section of the upper aperture is formed to be minimum, so that the Probe size (Probe size) of the charged particles can be maintained in a desired shape, and a multi-stage electric field is formed on the path of the charged particles to prevent scattering of the charged particles, thereby preventing the charged particles scattered at an undesired position from being irradiated, or the peripheral portion can be subjected to secondary processing after processing.
Drawings
Fig. 1 is a schematic view showing a partial vacuum holding apparatus of a sample processing apparatus using charged particles according to an embodiment of the present invention.
Fig. 2 is a diagram showing a sample processing state in the case where the pore module forms an electric field in the same direction as the moving direction of the charged particles according to the present invention.
Fig. 3 is a diagram showing a sample processing state when the pore module forms an electric field in a direction opposite to a moving direction of charged particles according to the present invention.
Fig. 4 is a diagram showing a sample processing state of the first embodiment including a plurality of aperture plates of the present invention.
Fig. 5 is a diagram showing a sample processing state of a second embodiment including a plurality of aperture plates of the present invention.
(description of the reference numerals)
100: a sample placement stage; 200: a column section;
300: a column housing; 400: a void module;
410: a void; 420. 440: a central aperture plate;
430: a lower aperture plate; 450: an upper aperture plate;
500: power supply unit
Detailed Description
The partial vacuum holding apparatus of the sample processing apparatus according to the present invention is described in detail below with reference to the accompanying drawings.
Fig. 1 is a schematic view showing a partial vacuum holding apparatus of a sample processing apparatus using charged particles according to an embodiment of the present invention, fig. 2 is a view showing a sample processing state of the present invention when an aperture module forms an electric field in the same direction as the moving direction of the charged particles, fig. 3 is a view showing a sample processing state of the present invention when an aperture module forms an electric field in the opposite direction to the moving direction of the charged particles, fig. 4 is a view showing a sample processing state of a first embodiment including a plurality of aperture plates of the present invention, and fig. 5 is a view showing a sample processing state of a second embodiment including a plurality of aperture plates of the present invention.
The present invention relates to an apparatus for processing a sample using charged particles having high energy, ionizing such as Ga, xe particles in the processing of the sample and focusing and using by an electric field. Focused Ion Beam (focused Ion Beam) is used to process samples, but is basically structurally similar to the type of ions used in electron microscopes such as SEM, and therefore FIB is also used for observation of samples. In the past, processing using FIB was mainly performed in a chamber having a high vacuum environment, but if the size of a display substrate sample is large, the size of the chamber becomes very large in order to maintain a high vacuum state, and the process of forming, holding, and releasing vacuum in the process of positioning the display substrate in the chamber and discharging the display substrate out of the chamber after finishing the processing requires much time, so that the necessity of processing at atmospheric pressure becomes large. However, since charged particles collide with air particles and scatter when processing is performed at atmospheric pressure, processing efficiency is lowered, processing precision is not ensured, and it is necessary to ensure partial vacuum at a portion to be processed. However, it is difficult to ensure a partial vacuum at the atmospheric pressure without a chamber, and even if the partial vacuum is formed, there is a problem that scattering by residual air particles cannot be completely prevented.
The sample processing device according to the present invention is a sample processing device for processing a sample set at atmospheric pressure by using charged particles, comprising: a sample placing stage 100 for fixing the sample S for processing or observing the sample S in an atmospheric pressure state; a column part 200 for discharging charged particles having energy to process the sample S fixed on the sample placing stage 100; a column case 300 in which the column 200 is accommodated, and a high vacuum state is maintained in the column case 300 so as to irradiate the charged particles to the sample S at a lower portion of the column case 300 around a path along which the charged particles released from the column 200 are irradiated to the sample S; a pore module 400 for forming pores 410 with a conductive material on paths where charged particles are irradiated to the sample S; a power supply unit 500 for supplying power to the aperture module 400 so as to form an electric field between the aperture module 400 and the sample S; and a control part (not shown) for controlling the power supply part 500 in order to adjust the intensity of the electric field formed between the aperture module 400 and the sample S.
The sample stage 100 of the present invention is a structure in which a sample S to be observed or processed is placed in a state fixed at atmospheric pressure. The sample placement stage 100 is preferably configured to fix the sample S after placing the sample S, and the sample placement stage 100 is preferably sized according to the size of the sample S. Further, since it is possible to process a plurality of positions in the sample S, it is preferable to move the sample S in the X-axis and Y-axis directions while fixing the sample S, and it is also possible to adjust the distance to be separated from the column housing 300 according to the sample S, and it is also possible to move the sample S in the Z-axis direction. Most importantly, since the processing of the sample S needs to be completed with very high precision, the sample placement stage 100 is preferably configured to reflect a vibration-proof design so as not to be affected by ambient vibration or the like. In addition, when a large-area display is processed or observed, a device for transferring the display may be added to enable continuous (in-line) processing, and in order to fix the display, a structure capable of forming a negative pressure on the sample placement stage 100 may be added, and if necessary, an illumination device may be provided at the lower portion of the sample placement stage 100.
The column 200 of the present invention is a structure for releasing charged particles for processing the sample S set on the sample setting table 100. Of course, as described above, all the particles are included as long as they release particles capable of processing the sample S. Since the sample processing device of the present invention is a device capable of processing the sample S, the column 200 is preferably configured to use FIB which can be processed efficiently with high energy, compared to a configuration in which an electron beam is released. FIB is roughly divided into an ion source that discharges charged particles and a portion that aligns and focuses an ion beam discharged from the ion source, and extraction of an ion beam from the ion source is performed by forming one end of the ion source from a tip (tip) and applying a strong electric field. The extracted ion beam is aligned by a lens, a deflector (deflector), or the like, and focused at a desired position. The ion beam released by FIB can perform precision machining of an observation sample or polishing, drilling, etc. by one source, and thus has an advantage of being applicable to an apparatus for performing complex sample processing. The column 200 is preferably arranged in a high vacuum atmosphere in order to generate and align charged particles efficiently and precisely because the charged particles need to be focused after the charged particles are generated and aligned.
The column housing 300 of the present invention has a structure including a cavity shape in which the column portion 200 for generating charged particles is provided. The column case 300 requires the column 200 for generating charged particles and alignment and focusing are required for irradiating the charged particles generated in the column 200 to a desired position, and for this purpose, a structure corresponding to a lens of an optical microscope, a guide plate, and the like are provided in the column case 300, and a detector for collecting charged particles such as secondary electrons released from a sample when observing the sample may be provided in the column case 300. As described above, various structures are provided inside the column housing 300, and since the required vacuum degree may be different according to the action performed by each structure, a partition may be provided inside the column housing 300 so that the required vacuum degree is formed differently.
In order to process the sample S set at the atmospheric pressure, an aperture module 400 forming an aperture 410 is provided at the lower portion of the column housing 300 of the present invention for precisely irradiating charged particles. In the prior art, the sample is processed in the cavity formed with the vacuum atmosphere, so that a structure of additionally arranging the pore is not needed, or a structure of blocking by a film is utilized, however, when the sample is processed in the cavity, the sample is required to be preprocessed or the sample with large area is required to be inserted into the cavity, and the sample is damaged and collected. The sample processing device using charged particles according to the present invention has an effect that the sample can be precisely processed and can be effectively used by providing the aperture 410. However, compared to the conventional sealed cavity form, since the pores 410 are difficult to maintain a high vacuum inside the column housing 300 and the sample S is left in the atmosphere, there is a problem in that scattering occurs due to collision of gas molecules forming air with charged particles. As described with reference to fig. 2 and 3, the charged particles are separated from the normal path by the gas molecules existing on the path toward the sample S, and thus the processing is performed over a wider range than the original processing. That is, since collision with gas molecules is deviated, there is a limit to precision machining. In this case as well, the same effect as that of increasing the Probe size (Probe size) of the scattered electron beam from the atmospheric molecules is exhibited in the viewpoint that the Probe size (Probe size) of the charged particles bundled to the sample is kept small so that the image with high resolution can be obtained.
To solve these problems, the sample processing device of the present invention uses the pore module 400 as a conductive material, and supplies power to the pore module 400 to form a positive voltage or a negative voltage. This is to form an electric field between the aperture module 400 and the sample S and minimize a scattering effect due to collisions with air particles, but collisions of air particles in the atmosphere with charged particles are a density-related problem. That is, in order to process the sample S with a desired precision in the atmosphere using charged particles instead of forming a process in a cavity forming a high vacuum, it is necessary to reduce the density of air particles in the atmosphere to increase the Mean Free Path (Mean Free Path) or refocus or remove the charged particles scattered by collisions with the air particles again with the sample, thereby preventing reflection collision between the pore module 400 and the sample S. Accordingly, the sample processing device of the present invention supplies power to the aperture module 400 of the conductive material through the power supply part 500 to form a positive voltage or a negative voltage, thereby controlling the scattered charged particles so as to form a process only at a desired process site.
The collision angles of collisions between charged particles and air particles are different, but fig. 2 shows a case where the collision angle is small, and fig. 3 shows a case where the collision angle is large. As shown in fig. 2, when the collision angle is small, the path is distorted to a slightly deviated degree, but when a positive voltage is applied to the pore module 400 so that an electric field is formed in the direction of the sample S, charged particles as cations are collected to the original path. Therefore, as shown in the figure, the scattering peripheral portion is prevented from being processed, and the processing deviation can be reduced. Fig. 3 shows a case where the collision angle is large, but it is difficult to gather again to the original path when the collision angle is large, and therefore, a negative voltage is applied to the aperture module 400 to control charged particles toward the aperture module 400 side, and by this, the charged particles can be more effectively prevented from colliding with the sample S.
Fig. 4 is a diagram showing a sample processing state of a first embodiment including a plurality of aperture plates of the present invention, an aperture module 400 is constructed to include two or more aperture plates, and different voltages are applied to each aperture plate, thereby improving the effect of re-collecting or removing scattered charged particles. As shown in fig. 4, a positive voltage is applied to the lower aperture plate 430, which is closer to the sample S, to perform the function of collecting charged particles, and a negative voltage is applied to the central aperture plate 420 to remove charged particles scattered while passing through the column housing 300 to perform the function of maintaining a desired probe size. Of course, it is preferable to insert a spacer member of non-conductive material between the central aperture plate 420 and the lower aperture plate 430.
Fig. 5 is a diagram showing a sample processing state of a second embodiment including a plurality of aperture plates of the present invention, three aperture plates being provided in total in an aperture module 400. The upper aperture plate 450 furthest from the sample S is a structure having a smaller cross section of the aperture 410 than the lower aperture plate 430, thereby physically adjusting the probe size. This mechanically removes charged particles scattered when passing through the column housing 300, thereby improving the processing precision. Unlike the first embodiment, a positive voltage is applied to the central aperture plate 420 to perform the function of collecting charged particles, and a negative voltage is applied to the lower aperture plate 430 to perform the function of removing scattered charged particles. The central aperture plate 420 is constructed as two aperture plates with a positive voltage applied thereto and the other is grounded after interposing a partition member of a non-conductive material therebetween so that path adjustment of charged particles can be performed more effectively. Further, such a hole plate connected to the ground is left, and electrical interference, short circuit, and the like can be prevented. Of course, the electrical configuration, the pitch, the arrangement, the number, etc. of the aperture plates may be set differently according to the environment in which the sample S is processed.
The control unit of the present invention is configured to control the magnitude of the voltage applied to the pore module 400 and the power supplied from the power supply unit 500 to the pore module 400 in accordance with the processing environment such as the material forming the sample S, the processing precision, the distance between the sample S and the void, and the like.
As described above, the sample processing apparatus of the present invention can have an effect of further improving the processing precision by using not only a configuration for adjusting the path of charged particles by supplying power to the pore module 400 but also a configuration for securing the partial vacuum degree in the vicinity of the sample S or using an air curtain, a barrier, or the like using an inert gas together.
Claims (8)
1. A sample processing device using charged particles, which is a sample processing device for processing a sample using charged particles at atmospheric pressure, comprising:
a sample placement stage on which a sample is placed for processing the sample at atmospheric pressure;
a column section for releasing charged particles for processing a sample placed on the sample placement stage;
a column housing which accommodates the column therein and irradiates the sample with charged particles released from the column;
a pore module which is provided in a lower portion of the column housing with a conductive material and forms a pore on a path along which charged particles released from the column portion are irradiated to a sample;
a power supply unit configured to supply power to the pore module so as to form an electric field between the pore module and the sample; and
and a control unit for controlling the power supply unit so as to adjust the intensity of the electric field formed between the pore module and the sample.
2. The sample processing device using charged particles according to claim 1, wherein the control section forms a positive voltage or a negative voltage in order to control a path of the charged particles supplied from the power supply section to the pore module to be adjusted by the power supply section.
3. The sample processing device using charged particles according to claim 1, wherein the pore module comprises two or more pore plates, the two or more pore plate stacks are formed on the moving path of the charged particles, and the cross section of pores formed at the pore plate farthest from the sample is formed to be minimum.
4. A sample processing device using charged particles according to claim 3, wherein the aperture module is composed of three aperture plates, and different voltages are applied to the lower aperture plate and the central aperture plate nearest to the sample, respectively.
5. The sample processing device using charged particles according to claim 4, wherein a negative voltage is applied to the lower aperture plate and a positive voltage is applied to the central aperture plate.
6. The sample processing device utilizing charged particles according to claim 4, wherein the central aperture plate is formed of two aperture plates with a partition member of a non-conductive material interposed therebetween.
7. The sample processing device using charged particles according to claim 6, wherein a positive voltage is applied to one of the two aperture plates, and the other is grounded.
8. The sample processing device using charged particles according to claim 1, wherein the control section controls the power supply section according to characteristics of the charged particles, a space between the pore module and the sample, a material of the sample, and adjusts an electric field intensity formed at the pore module.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2021-0172148 | 2021-12-03 | ||
| KR1020210172148A KR20230083805A (en) | 2021-12-03 | 2021-12-03 | Specimen treating apparatus using charged particles |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN116230476A true CN116230476A (en) | 2023-06-06 |
Family
ID=86570254
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111627844.5A Pending CN116230476A (en) | 2021-12-03 | 2021-12-28 | Sample processing device using charged particles |
Country Status (2)
| Country | Link |
|---|---|
| KR (1) | KR20230083805A (en) |
| CN (1) | CN116230476A (en) |
-
2021
- 2021-12-03 KR KR1020210172148A patent/KR20230083805A/en not_active Application Discontinuation
- 2021-12-28 CN CN202111627844.5A patent/CN116230476A/en active Pending
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| Publication number | Publication date |
|---|---|
| KR20230083805A (en) | 2023-06-12 |
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