CN106783497A - A kind of method of operation of ion implantation device - Google Patents
A kind of method of operation of ion implantation device Download PDFInfo
- Publication number
- CN106783497A CN106783497A CN201611195015.3A CN201611195015A CN106783497A CN 106783497 A CN106783497 A CN 106783497A CN 201611195015 A CN201611195015 A CN 201611195015A CN 106783497 A CN106783497 A CN 106783497A
- Authority
- CN
- China
- Prior art keywords
- ion
- voltage
- implantation device
- ion implantation
- extraction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005468 ion implantation Methods 0.000 title claims abstract description 55
- 238000000034 method Methods 0.000 title claims abstract description 28
- 238000000605 extraction Methods 0.000 claims abstract description 56
- 230000000803 paradoxical effect Effects 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 150000002500 ions Chemical class 0.000 description 75
- 238000009825 accumulation Methods 0.000 description 10
- 230000005611 electricity Effects 0.000 description 8
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 239000000428 dust Substances 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000005596 ionic collisions Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000013049 sediment Substances 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
Abstract
The present invention provides a kind of method of operation of ion implantation device, the ion implantation device is provided with ion gun and extraction electrode system, after the ion implantation device ion implanting terminates, during carrying out substrate exchange, apply the arc voltage that assigned voltage sets multiple to the ion gun, the extraction voltage and assigned voltage for applying assigned voltage setting multiple to the extraction electrode system set the accelerating potential of multiple, if there is paradoxical discharge in the ion implantation device, the ion implantation device is then restarted, then carries out ion implanting；If the ion implantation device no exceptions electric discharge, arc voltage, extraction voltage and accelerating potential is recovered to assigned voltage, then carry out ion implanting；So that the paradoxical discharge of deposit occurs in advance in the ion implantation device, there is the paradoxical discharge of deposit when reducing ion implanting.
Description
Technical field
The present invention relates to ion implantation technique field, and in particular to one kind is applied to the pole of glass substrate active matrix light-emitting two
The method of operation of the ion implantation device of tube face plate.
Background technology
Existing ion implantation device, using direct current draw ion beam, and to ion accelerate (beamacceleration) after, to the base of process chamber
Plate irradiates ion beam.In ion implantation process, ion implanting thing consumes accumulation inside ion gun and forms deposit, the shallow lake
Product thing will cause the capacitance structure between the capacitance structure of ion source chamber chamber interior walls, battery lead plate to change, so as to trigger what is taken place frequently
Paradoxical discharge.When the paradoxical discharge is slighter, ion gun educt beaming flow will be caused unstable so that under ion implanting homogeneity
Drop；When the paradoxical discharge is serious, dust or dirty pollution substrate will be produced on substrate, even more so that ion gun and extraction
Electrode system loses inherent voltage, causes equipment to shut down.For this problem, the solution of prior art is：From
Hydrogen, is imported ion gun by son injection gap, and hydrogen plasma, the deposit inside cleaning ion gun are produced inside ion gun
Thing, but, in practice, only ion gun inside is cleaned, it is impossible to accomplish to remove deposit completely, remaining shallow lake
Product thing can still cause ion implantation device that paradoxical discharge occurs.
The content of the invention
For above-mentioned the deficiencies in the prior art, the present invention provides a kind of method of operation of ion implantation device, by from
After sub- injection device ion implanting terminates, during carrying out substrate exchange, assigned voltage setting multiple is applied to the ion gun
Arc voltage, the extraction voltage and assigned voltage for applying assigned voltage setting multiple to the extraction electrode system sets multiple
Accelerating potential so that the paradoxical discharge of deposit occurs in advance in the ion implantation device, forms sediment when reducing ion implanting
The paradoxical discharge of product thing.
To solve the above problems, the technical solution adopted by the present invention is：
The present invention provides a kind of method of operation of ion implantation device, and the ion implantation device is provided with ion gun and draws
Electrode system, after the ion implantation device ion implanting terminates, during carrying out substrate exchange, applies to advise to the ion gun
Determine the arc voltage that voltage sets multiple, extraction voltage and the rule of assigned voltage setting multiple are applied to the extraction electrode system
Determine the accelerating potential that voltage sets multiple, if the ion implantation device occurs paradoxical discharge, restart the ion note
Enter equipment, then carry out ion implanting；If the ion implantation device no exceptions electric discharge, by arc voltage, extraction voltage
Recover to assigned voltage with accelerating potential, then carry out ion implanting.
Specifically, assigned voltage setting multiple is set into 1.5 times of assigned voltage.
Further, while the arc voltage of assigned voltage setting multiple is applied to the ion gun, by ion gun
Heater current increase to the setting multiple of rated current.
Specifically, rated current setting multiple is set to 1.05 times of rated current.
Further, while the arc voltage applied to the ion gun recovers to assigned voltage, by ion gun
Heater current recover to rated current.
The beneficial effects of the present invention are：The method of operation of a kind of ion implantation device that the present invention is provided, by institute
State after ion implantation device ion implanting terminates, during carrying out substrate exchange, assigned voltage setting times is applied to the ion gun
Several arc voltages, extraction voltage and the assigned voltage setting times of assigned voltage setting multiple are applied to the extraction electrode system
Several accelerating potential so that the paradoxical discharge of deposit occurs in advance in the ion implantation device, sends out when reducing ion implanting
The paradoxical discharge of raw deposit；Improving ion implantation device carries out that paradoxical discharge occurs during ion implanting, causes ion implanting
The problem that homogeneity declines, equipment shuts down.
Brief description of the drawings
Fig. 1 is a kind of FB(flow block) of the method for operation of ion implantation device of the invention；
Fig. 2 is extremely interior paradoxical discharge structural representation in ion implantation process；
Fig. 3 is interpolar paradoxical discharge structural representation in ion implantation process.
Specific embodiment
Below in conjunction with accompanying drawing, technical scheme is clearly described, described embodiment is only
A part of embodiment of the invention, rather than whole embodiments.
Using gaseous plasma as the ion implantation device of ion gun, carry out the plasma persistently light and from
Beamlet is drawn in injection process, the continuous knock-on ion source chamber room of ion, the filament of ion gun, the electrode of extraction electrode system
Plate so that ion implanting thing consumes accumulation inside ion gun and forms deposit.The process is considered as gas phase sputter or gas phase is heavy
Product process.The deposit will cause the capacitance structure between the capacitance structure of ion source chamber chamber interior walls, battery lead plate to change, from
And trigger the paradoxical discharge for taking place frequently.When the paradoxical discharge is slighter, ion gun educt beaming flow will be caused unstable so that ion
Injection homogeneity declines；When the paradoxical discharge is serious, dust or dirty pollution substrate will be produced on substrate, even more so that
Ion gun and extraction electrode system lose inherent voltage, cause equipment to shut down.
The paradoxical discharge includes the interpolar discharge between the extremely interior electric discharge of pole plate and pole plate, and the embodiment of the present invention is noted with ion
Enter after deposition of the thing on the extraction electrode of extraction electrode system to occur as a example by paradoxical discharge, it is necessary to explanation, ion implanting
The paradoxical discharge principle that thing occurs on other battery lead plates of ion source chamber chamber interior walls or extraction electrode system is identical.Such as Fig. 2 institutes
Show, be extremely interior paradoxical discharge structural representation in ion implantation process, the voltage applied on the extraction electrode is negative voltage, when
When the ion implanting thing is fluoro plasma or boron plasma, ion implanting thing is by the extraction electrode of extraction electrode system
It is upper deposition formed insulation fluoride or boride, as the deposition of the insulant is thickening, subsequently impinge upon the position just from
Son electric charge will be increasingly difficult to discharge, thus fluoride surface formed charge accumulation, when charge accumulation to it is sufficiently high when,
The electric charge of the accumulation will puncture the gas or insulant near pole plate and be discharged with this pole plate, while insulant part quilt
Accumulation will be started again at after shooting down and forms new insulant, the fallen insulant will produce dust or dirty on substrate
Pollution substrate.
As shown in figure 3, be the interpolar discharge structural representation of paradoxical discharge in ion implantation process, when ion implanting thing exists
The radius that the insulant of formation is deposited on extraction electrode is gradually increased to more than distance between polar plate, and the resistance of the insulant is more than
Resistance between pole plate, when the electric charge on the insulant surface increases to sufficiently large, the electric charge of insulant surface accumulation will be to facing
Near pole plate is discharged so that more insulant is shot down, and the electric discharge even can cause puncturing for two-plate, causes a large amount of
Insulant shot down after start again at accumulation form new insulant, stating fallen insulant will produce dust on substrate
Or dirty pollution substrate.
There is the harmful effect that paradoxical discharge is caused to ion implanting in ion implantation process based on this, the present invention is adopted
The technical scheme for taking is as follows：
The embodiment of the present invention provides a kind of method of operation of ion implantation device, and the ion implantation device is provided with ion gun
With extraction electrode system, the extraction electrode system is four electrode extraction systems, including accelerates electrode, extraction electrode, suppresses electricity
Pole, earth electrode, as shown in figure 1, be set to for the parameter of ion gun first to process gas is provided inside ion gun by the present invention
Regulation parameter, such as applies the arc voltage of regulation, applies the heater current of regulation, then lights plasma, and drawing electricity
Electrode systems apply assigned voltage, such as accelerating potential and extraction voltage of regulation, and the uniform line of extraction is noted to substrate into ion
Enter.After the ion implantation device ion implanting terminates, during carrying out substrate exchange, assigned voltage is applied to the ion gun
The arc voltage of multiple is set, extraction voltage and assigned voltage that assigned voltage sets multiple are applied to the extraction electrode system
The accelerating potential of multiple is set, if the ion implantation device occurs paradoxical discharge, the ion implantation device is restarted,
Ion implanting is carried out again；If the ion implantation device no exceptions electric discharge, by arc voltage, extraction voltage and acceleration electricity
Pressure is recovered to assigned voltage, then carries out ion implanting.
Specifically, by taking the extraction electrode of extraction system as an example, what is applied on the extraction electrode is negative voltage, when largely just
On extraction electrode plate, the insulant on the extraction electrode plate increases for ion collision, until collision is on extraction electrode plate
The electric charge of cation insulant surface formed positive electricity charge accumulation, and not up to discharging condition when, in the ion implanting
After equipment ion implanting terminates, during carrying out substrate exchange, now, the extraction that assigned voltage sets multiple is applied to extraction electrode
Voltage, the then positive electricity for being accumulated on insulant will increase with the electrical potential difference of extraction electrode, so as to trigger electric discharge, the insulant be hit
Wear, into next insulant integration period so that the electric discharge of deposit occurs in advance, described during ion implanting is carried out
No longer there is paradoxical discharge in equipment；But, when being discharged in advance due to the ion implantation device, the extraction electricity of the equipment
Electrode systems will lose inherent voltage, cause equipment autostop, therefore need to restart the ion implantation device, then carry out from
Son injection；If apply the extraction voltage of assigned voltage setting multiple to extraction electrode, the extraction electrode does not occur extremely interior yet
Electric discharge, then show that the extraction electrode, when applying assigned voltage carries out ion implanting, will not also occur extremely interior paradoxical discharge, because
This, the voltage of extraction electrode is recovered to assigned voltage, you can carry out ion implanting.
When the insulant on extraction electrode is accumulate to sufficiently large, closes on and cause interpolar discharge, and the insulant surface
Charge accumulation when being not up to discharging condition, after the ion implantation device ion implanting terminates, during carrying out substrate exchange,
Now, to accelerating electrode to apply the accelerating potential that assigned voltage sets multiple, then insulant surface accumulates positive electricity and accelerate electricity
Electrical potential difference increase between pole plate, so as to trigger interpolar discharge, more insulant is shot down so that the electric discharge of deposit occurs in advance,
During ion implanting is carried out, no longer there is paradoxical discharge in the equipment；But, because the ion implantation device occurs in advance
During electric discharge, the extraction electrode system of the equipment will lose inherent voltage, cause equipment autostop, therefore need to restart institute
Ion implantation device is stated, then carries out ion implanting；If during to accelerating electrode to apply the accelerating potential of assigned voltage setting multiple, institute
State extraction electrode and interpolar discharge does not occur yet, then show that the acceleration electrode, when applying assigned voltage carries out ion implanting, draws
Going out electrode will not also occur interpolar discharge, therefore, the voltage of electrode will be accelerated to recover to assigned voltage, you can carry out ion note
Enter.
Preferably, assigned voltage setting multiple is set to 1.5 times of assigned voltage, it is described according to actual conditions
Assigned voltage setting multiple can be other multiples.
Preferably, while the arc voltage of assigned voltage setting multiple is applied to the ion gun, by ion gun
Heater current increases to the setting multiple of rated current.
Preferably, rated current setting multiple is set to 1.05 times of rated current, it is described according to actual conditions
Rated current setting multiple can be other multiples.
Preferably, while the arc voltage applied to the ion gun recovers to assigned voltage, by the lamp of ion gun
Silk electric current recovers to rated current.
It should be noted that after the ion implantation device ion implanting terminates, during carrying out substrate exchange, can be with one
While applying the arc voltage that assigned voltage sets multiple to the ion gun, applying assigned voltage to the extraction electrode system sets
The extraction voltage and assigned voltage for determining multiple set the accelerating potential of multiple, while carrying out the cleaning of ion gun；Can also to institute
Ion gun is stated to apply the arc voltage of assigned voltage setting multiple, apply assigned voltage setting multiple to the extraction electrode system
Extraction voltage and assigned voltage set multiple accelerating potential while the ion gun is cleaned.One kind of the invention
The method of operation of ion implantation device is applied to after the ion implantation device ion implanting terminates, and carries out the substrate exchange phase
Between, ion gun clean and is implemented in preceding or cleaning.
If above-mentioned embodiment is the present invention preferably implementation method, but embodiments of the present invention do not receive above-described embodiment
Limitation, it is other it is any without departing from Spirit Essence of the invention and the change, modification, replacement made under principle, combine, it is simple
Change, should be equivalent substitute mode, be included within protection scope of the present invention.
Claims (5)
1. a kind of method of operation of ion implantation device, the ion implantation device is provided with ion gun and extraction electrode system, its
It is characterised by：After the ion implantation device ion implanting terminates, during carrying out substrate exchange, apply to advise to the ion gun
Determine the arc voltage that voltage sets multiple, extraction voltage and the rule of assigned voltage setting multiple are applied to the extraction electrode system
Determine the accelerating potential that voltage sets multiple, if the ion implantation device occurs paradoxical discharge, restart the ion note
Enter equipment, then carry out ion implanting；If the ion implantation device no exceptions electric discharge, by arc voltage, extraction voltage
Recover to assigned voltage with accelerating potential, then carry out ion implanting.
2. a kind of method of operation of ion implantation device as claimed in claim 1, it is characterised in that：The assigned voltage is set
Determine 1.5 times that multiple is set to assigned voltage.
3. a kind of method of operation of ion implantation device as claimed in claim 1, it is characterised in that：
While the arc voltage of assigned voltage setting multiple is applied to the ion gun, the heater current of ion gun is increased
To the setting multiple of rated current.
4. a kind of method of operation of ion implantation device as claimed in claim 3, it is characterised in that：The rated current is set
Determine 1.05 times that multiple is set to rated current.
5. a kind of method of operation of ion implantation device as claimed in claim 4, it is characterised in that：
While the arc voltage applied to the ion gun recovers to assigned voltage, by the heater current of ion gun recover to
Rated current.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611195015.3A CN106783497B (en) | 2016-12-22 | 2016-12-22 | A kind of method of operation of ion implantation device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611195015.3A CN106783497B (en) | 2016-12-22 | 2016-12-22 | A kind of method of operation of ion implantation device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106783497A true CN106783497A (en) | 2017-05-31 |
| CN106783497B CN106783497B (en) | 2018-07-17 |
Family
ID=58899161
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611195015.3A Active CN106783497B (en) | 2016-12-22 | 2016-12-22 | A kind of method of operation of ion implantation device |
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| Country | Link |
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Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0822797A (en) * | 1994-07-07 | 1996-01-23 | Hitachi Ltd | Electric power supply device for electron beam welding |
| JPH08106875A (en) * | 1994-10-03 | 1996-04-23 | Hitachi Ltd | Device and method for implanting ion |
| JP2004063194A (en) * | 2002-07-26 | 2004-02-26 | Renesas Technology Corp | Abnormal discharge detecting device |
| TWI278907B (en) * | 2001-12-05 | 2007-04-11 | Hitachi High Tech Corp | Apparatus and method for monitoring plasma processing apparatus |
| CN103094028A (en) * | 2011-11-07 | 2013-05-08 | 日新离子机器株式会社 | Cleaning apparatus of ion source extraction electrode system |
| CN103515172A (en) * | 2012-06-22 | 2014-01-15 | 日新离子机器株式会社 | Ion beam irradiation apparatus and operation method thereof |
| JP2014127373A (en) * | 2012-12-26 | 2014-07-07 | Nissin Ion Equipment Co Ltd | Ion implantation apparatus and method of operating ion implantation apparatus |
| CN103928280A (en) * | 2013-01-16 | 2014-07-16 | 日新离子机器株式会社 | Ion Implanter And Method Of Operating Ion Implanter |
| CN105869976A (en) * | 2016-03-31 | 2016-08-17 | 信利（惠州）智能显示有限公司 | Operating method and cleaning method for ion implantation apparatus |
-
2016
- 2016-12-22 CN CN201611195015.3A patent/CN106783497B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0822797A (en) * | 1994-07-07 | 1996-01-23 | Hitachi Ltd | Electric power supply device for electron beam welding |
| JPH08106875A (en) * | 1994-10-03 | 1996-04-23 | Hitachi Ltd | Device and method for implanting ion |
| TWI278907B (en) * | 2001-12-05 | 2007-04-11 | Hitachi High Tech Corp | Apparatus and method for monitoring plasma processing apparatus |
| JP2004063194A (en) * | 2002-07-26 | 2004-02-26 | Renesas Technology Corp | Abnormal discharge detecting device |
| CN103094028A (en) * | 2011-11-07 | 2013-05-08 | 日新离子机器株式会社 | Cleaning apparatus of ion source extraction electrode system |
| CN103515172A (en) * | 2012-06-22 | 2014-01-15 | 日新离子机器株式会社 | Ion beam irradiation apparatus and operation method thereof |
| JP2014127373A (en) * | 2012-12-26 | 2014-07-07 | Nissin Ion Equipment Co Ltd | Ion implantation apparatus and method of operating ion implantation apparatus |
| CN103928280A (en) * | 2013-01-16 | 2014-07-16 | 日新离子机器株式会社 | Ion Implanter And Method Of Operating Ion Implanter |
| CN105869976A (en) * | 2016-03-31 | 2016-08-17 | 信利（惠州）智能显示有限公司 | Operating method and cleaning method for ion implantation apparatus |
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| Publication number | Publication date |
|---|---|
| CN106783497B (en) | 2018-07-17 |
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