WO2015025823A1 - Sputtering film formation device and sputtering film formation method - Google Patents
Sputtering film formation device and sputtering film formation method Download PDFInfo
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- WO2015025823A1 WO2015025823A1 PCT/JP2014/071588 JP2014071588W WO2015025823A1 WO 2015025823 A1 WO2015025823 A1 WO 2015025823A1 JP 2014071588 W JP2014071588 W JP 2014071588W WO 2015025823 A1 WO2015025823 A1 WO 2015025823A1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3447—Collimators, shutters, apertures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3464—Operating strategies
- H01J37/3467—Pulsed operation, e.g. HIPIMS
Definitions
- the present invention relates to a sputtering film forming apparatus for forming a film on a substrate opposed to a target through a mask, and more particularly to a sputtering film forming apparatus and a sputtering film forming method capable of cleaning a mask while forming a film. It is.
- a film forming apparatus having a mask cleaning function has completed the deposition of an organic compound using a mask in a decompressed film forming chamber, and then brought the film forming chamber to atmospheric pressure, A high-frequency voltage is applied to the mask to excite the gas introduced into the film formation chamber to generate plasma, thereby removing the organic compound attached to the mask (see, for example, Patent Document 1).
- an object of the present invention is to provide a sputtering film forming apparatus and a sputtering film forming method capable of dealing with such problems and cleaning a mask while forming a film.
- the sputtering film forming apparatus generates a plasma between a target and a substrate by applying a high cathode voltage to the cathode electrode, and forms a plasma on the substrate through a mask.
- a sputtering film forming apparatus for forming a film comprising a pulse bias power source capable of applying a pulsed negative voltage to the mask during a film forming process on the substrate.
- the sputtering film forming method according to the second invention is a sputtering film forming method in which a high voltage cathode voltage is applied to the cathode electrode to generate plasma between the target and the substrate, and the film is formed on the substrate through a mask. In the film forming process on the substrate, a pulsed negative voltage is applied to the mask.
- a thin film deposited on the surface of the mask is inactivated by applying a pulsed negative voltage to the mask during the film formation process on the substrate performed by applying a high cathode voltage to the cathode electrode. It can be removed by striking with gas cations. Accordingly, the mask can be cleaned while the film is formed, and the throughput of the film formation substrate can be improved.
- FIG. 3 is a timing chart showing the application timing of the bias voltage in the first embodiment. It is a figure explaining the film-forming of the seasoning period in the said 1st Embodiment, (a) shows the time of film-forming start, (b) shows the state which film-forming advanced. It is explanatory drawing shown about the mask washing
- FIG. 1 is a front view showing a schematic configuration of a first embodiment of a sputtering film forming apparatus according to the present invention.
- This sputtering film forming apparatus is an RF sputtering apparatus that generates a plasma between a target and a substrate by applying a high-frequency voltage to a target holder, and forms a film on the substrate through a mask. 2, a substrate holder 3, a shutter 4, a high-frequency power source 5, and a pulse bias power source 6.
- the vacuum chamber 1 is a sealed container that forms a film forming chamber 7 therein, and includes a gas introduction port 8 and an exhaust port 9. Then, the air or sputtering gas in the film forming chamber 7 is exhausted by a vacuum pump (not shown) connected to the exhaust port 9 so that the inside of the film forming chamber 7 can be maintained at a certain degree of vacuum. ing. Further, a gas cylinder (not shown) of an inert gas such as argon (Ar) gas is connected to the gas introduction port 8 by a pipe so that the sputtering gas can be introduced into the film forming chamber 7. .
- argon (Ar) gas is connected to the gas introduction port 8 by a pipe so that the sputtering gas can be introduced into the film forming chamber 7. .
- a target holder 2 is disposed in the film forming chamber 7 of the vacuum chamber 1.
- the target holder 2 is used to fix and hold the target 10 and is formed of a metal material in a state of being electrically insulated from the vacuum chamber 1.
- the target holder 2 may be provided with a water channel so that cooling water for cooling the target 10 can be introduced from the outside as needed.
- a substrate holder 3 is disposed so as to face the target holder 2.
- the substrate holder 3 holds the substrate 12 in a state in which a mask 11 made of, for example, a resin film provided with a plurality of opening patterns is in close contact with the film formation surface of the substrate 12, and is formed of a metal material. Yes.
- the mask 11 is not limited to a non-conductive material such as a resin film, and may be a conductive metal mask.
- a non-conductive mask when the thin film to be formed is a conductive film, either a non-conductive mask or a conductive metal mask may be used.
- the thin film to be formed when the thin film to be formed is a non-conductive film, it is possible to use a conductive metal mask or a composite mask in which a conductive thin film is deposited on the target side surface of the non-conductive mask. Good.
- the case where the thin film to be formed is a conductive film and the mask 11 is a non-conductive resin film will be described.
- the target holder 2 and the substrate holder 3 may be arranged in any manner in the film forming chamber 7 of the vacuum chamber 1.
- the target holder 2 and the substrate holder 3 may be opposed to each other in the vertical direction, or may be arranged to be opposed to the left and right.
- the mask 11 is made of a film as in the present embodiment, the target holder 2 and the substrate holder 3 are disposed so as to face each other with the substrate holder 3 on the lower side, or the vacuum chamber 7. It is desirable to arrange them so as to be inclined with respect to the vertical axis. Thereby, since the film mask 11 hangs down by its own weight, the mask 11 can be brought into close contact with the film formation surface of the substrate 12.
- a shutter 4 is provided between the target holder 2 and the substrate holder 3.
- This shutter 4 is for controlling the start and end timing of film formation, and is provided so that the passage of sputtered particles 19 (see FIG. 4) flying from the target 10 toward the substrate 12 can be opened and closed. That is, when the shutter 4 moves in the direction of arrow A shown in FIG. 1 and the passage of the sputtered particles 19 is opened, film formation starts, and the shutter 4 moves in the direction of arrow B shown in FIG. When is closed, the film formation is completed. Thereby, the film thickness of the thin film pattern formed can be controlled.
- the state where the passage of the sputtered particles 19 is closed by the shutter 4 is referred to as “the shutter 4 is closed”, and the state where the passage of the sputtered particles 19 is opened is referred to as “the shutter 4 is opened”. .
- a high frequency power source (RF power source) 5 is provided in electrical connection with the target holder 2.
- the high-frequency power source 5 supplies a high-frequency power of 13.56 MHz to the target holder 2 and applies a high-frequency voltage (RF voltage) to the target holder 2 to generate plasma between the target 10 and the substrate 12.
- a high-frequency matching unit (not shown) for adjusting the high-frequency power is provided.
- the target holder 2 side is a cathode electrode
- the substrate holder 3 side is a ground electrode (anode electrode).
- reference numeral 13 denotes a bypass capacitor connected in series to the target holder 2
- reference numeral 14 denotes, for example, a portion of the target holder 2 other than the portion of the target 10 where the anode ions face the substrate 12. This is a shield member for preventing collision, and an opening 15 is provided corresponding to the central region of the target 10.
- a pulse bias power source 6 is provided on the surface of the mask 11 on the target 10 side so as to be energized.
- the pulse bias power source 6 is driven in synchronization with the cathode voltage, and is driven to be turned on when the cathode voltage is positive to output a pulsed negative voltage and to apply a bias voltage to the mask 11. .
- the pulse bias power source 6 is inserted between the bias electrode 16 contacting the surface of the mask 11 and the bias electrode 16 and the pulse bias power source 6 as shown in FIG. Is connected in series with a limiting resistor 17.
- step S1 preparation for film formation is performed. Specifically, the vacuum in the film forming chamber 7 of the vacuum chamber 1 is broken, and a target 10 of, for example, ITO (a composite oxide film forming material mainly composed of indium-tin) is placed on the target holder 2 in the film forming chamber 7. It is attached.
- a target 10 of, for example, ITO a composite oxide film forming material mainly composed of indium-tin
- the substrate 12 is placed on the substrate holder 3, and the mask 11 is placed in close contact with the film forming surface of the substrate 12. Thereafter, a bias electrode 16 connected to the pulse bias power source 6 is brought into contact with the surface of the mask 11.
- step S2 preparation for starting film formation is performed. Specifically, when the attachment of the target 10 and the substrate 12 is completed, the vacuum chamber 1 is closed. Then, an exhaust valve (not shown) provided on the exhaust port 9 side of the vacuum chamber 1 is gradually opened, and the air in the film forming chamber 7 is exhausted by the vacuum pump. At this time, the gas introduction valve (not shown) provided on the gas introduction port 8 side is closed. The shutter 4 is also closed.
- the gas introduction valve is opened, and Ar gas adjusted to a constant flow rate by, for example, a mass flow controller is introduced. Subsequently, the exhaust amount of the exhaust pump is adjusted by adjusting the exhaust valve, and the total gas pressure in the film forming chamber 7 is adjusted to a predetermined value.
- step S3 the transparent conductive film 21 is formed. Specifically, when the gas pressure in the film forming chamber 7 reaches a predetermined value, the high-frequency power source 5 is activated, and a predetermined high-frequency (RF) voltage as shown in FIG. Is done. This high frequency power is adjusted by a high frequency matching device and a power output.
- RF high-frequency
- the Ar gas in the film formation chamber 7 is ionized, and plasma is generated between the target 10 and the shutter 4. Then, when pre-sputtering is performed for a certain time and the impurities on the surface of the target 10 are removed, the shutter 4 is opened and sputtering film formation on the substrate 12 is started.
- the cathode voltage has a sine waveform biased to the negative side as shown in FIG. Then, as shown by hatching in the figure, sputtering of the target is performed during a period in which the cathode voltage is negative, and film formation is performed on the substrate 12. From the start of sputtering until the passage of a certain period (seasoning period shown in FIG. 5C), the transparent conductive film having a sufficient thickness to which a bias voltage can be applied from the pulse bias power source 6 is applied to the surface of the mask 11. Since the film 21 is not deposited, no bias voltage is applied to the surface of the mask 11 even when the pulse bias power supply 6 is activated. Therefore, in the present embodiment, the pulse bias power source 6 is set to 0 V during the seasoning period.
- the ionized Ar gas cation 18 is attracted to the target 10 side when the cathode voltage is negative.
- the sputtered particles 19 are blown off by collision.
- the sputtered particles 19 thus blown off fly toward the substrate 12 and adhere to the surface of the substrate 12 through the opening pattern 20 of the mask 11 as shown in FIG. Is done.
- the sputtered particles 19 adhere to the surface of the mask 11 and the transparent conductive film 21 is deposited.
- film formation is performed in the target sputtering period in which the cathode voltage is negative.
- the pulse bias power supply 6 When the seasoning period elapses, the pulse bias power supply 6 is activated as shown in FIG. Then, during the period when the cathode voltage is positive and sputtering is stopped (target sputtering stop period shown in FIG. 5B), the pulse bias power supply 6 outputs a negative voltage and is deposited on the surface of the mask 11. A pulsed bias voltage ( ⁇ Vb) is applied to 21. As a result, as shown in FIG. 5, the ionized Ar gas cation 18 is attracted to the mask 11 side and hits the transparent conductive film 21 deposited on the surface of the mask 11 as shown by the arrow in FIG. Bombardment is performed (mask cleaning).
- the pulse bias power source 6 is synchronized with the cathode voltage as shown in FIG.
- the voltage applied to the mask 11 is controlled to 0 V (the pulse bias power supply 6 is turned off).
- FIG. 6A normal sputtering film formation using the mask 11 is started again, and the transparent conductive film 21 is deposited on the surface of the substrate 12 and the mask 11 as shown in FIG. 6B. To do.
- step S4 the substrate is taken out. Specifically, the exhaust valve and the gas introduction valve are closed, a leak valve (not shown) is opened, and the vacuum in the film forming chamber 7 of the vacuum chamber 1 is broken. Thereby, the film formation chamber 7 can be opened and the substrate 12 can be taken out. When the substrate 12 is taken out, the bias electrode 16 is retracted from the surface of the mask 11 to the outside of the surface.
- FIG. 7 is a front view showing a schematic configuration of the second embodiment of the sputtering film-forming apparatus according to the present invention.
- a DC power supply 22 is provided instead of the high frequency power supply 5 in the first embodiment, and the negative electrode side of the DC power supply 22 is connected to the target holder 2 (cathode electrode) via a resistor 23.
- the positive electrode side is connected to the substrate holder 3 (anode electrode).
- the target material used is limited to a conductive material.
- the pulse bias power source 6 in the second embodiment outputs a negative pulse voltage having a constant cycle in a state where the cathode voltage ( ⁇ Vc) is applied to the target holder 2, and outputs the cathode voltage ( A bias voltage ( ⁇ Vb) having a larger absolute value than ⁇ Vc) can be applied (Vc ⁇ Vb).
- a negative DC voltage (cathode voltage) of several hundred volts is constantly applied to the cathode electrode during film formation, and the target 10 and the substrate 12 During this time, plasma is generated to form a film on the substrate 12.
- the target 10 is struck by argon cations 18 generated by the Ar gas being turned into plasma, and the sputtered particles 19 bounced thereby are deposited on the substrate 12.
- a conductive film is formed.
- the pulse bias power source 6 sets the applied voltage to the mask 11 to 0 V during the seasoning period after the start of film formation, and a pulse-like negative voltage with a constant cycle after the seasoning period has elapsed. And a bias voltage (-Vb) having a voltage absolute value larger than the cathode voltage (-Vc) is applied to the mask 11 (Vc ⁇ Vb).
- a pulsed bias voltage ( ⁇ Vb) is applied to the mask 11
- the argon cations 18 are attracted to the mask 11 side and deposited on the surface of the mask 11 as in the first embodiment. Ion bombardment is performed by hitting the conductive film (mask cleaning).
- the sputtering film forming apparatus of the present invention by applying a pulsed negative voltage to the mask 11 in the film forming process performed by applying a high cathode voltage to the cathode electrode, The thin film deposited on the surface can be removed by hitting with an inert gas cation 18. Accordingly, the mask 11 can be cleaned while the film is formed, and the throughput of the film formation substrate can be improved.
- the pulse bias power source 6 is stopped and the applied voltage to the mask 11 is set to 0 V in the seasoning period has been described.
- the present invention is not limited to this, and the high frequency power source 5 or the DC power source is used.
- the pulse bias power supply 6 may be activated at the same time as the activation of the voltage 22 so that a negative voltage having a constant period is applied to the mask 11.
- the bias voltage is not applied to the conductive film even when the pulse bias power supply 6 is activated until a conductive film having a sufficient thickness is deposited on the entire surface of the mask 11 and the bias voltage can be applied.
- the mask cleaning function is not demonstrated.
- the film formed on the substrate 12 is a conductive film
- the mask 11 is a conductive metal mask or a composite mask in which a metal mask and a resin film are in close contact.
- the film to be formed may be a non-conductive film.
- the present invention is not limited to this and may be an in-line type sputtering film forming apparatus.
- a load lock chamber is provided on the upstream side in the transport direction of the substrate 12 with the film forming chamber 7 therebetween, and an unload chamber is provided on the downstream side.
- the gate valve on the upstream side of the load lock chamber is opened, and the substrate 12 is carried into the load lock chamber.
- the gate valve on the downstream side of the load lock chamber is opened, and the substrate 12 is carried into the film forming chamber 7 and set in the substrate holder 3.
- the downstream gate valve is closed, the mask 11 previously held in the mask holder in the film forming chamber 7 is loaded and placed on the substrate 12, and the bias electrode 16 is brought into contact with the surface of the mask 11. .
- the bias electrode 16 is retracted, and then the mask 11 is unloaded.
- the gate valve on the downstream side of the film formation chamber 7 is opened, and the substrate 12 is carried out to the unload chamber.
- the gate valve on the downstream side of the film formation chamber 7 is closed, and the substrate 12 can be taken out by breaking the vacuum in the unload chamber.
Abstract
Description
先ず、ステップS1において、成膜の準備が行われる。詳細には、真空チャンバー1の成膜室7の真空を破って、成膜室7内のターゲットホルダー2に例えばITO(インジウム-錫を主成分とする複合酸化物成膜材料)のターゲット10が取り付けられる。 Next, a sputtering film forming method using the thus configured sputtering film forming apparatus will be described with reference to the flowchart of FIG.
First, in step S1, preparation for film formation is performed. Specifically, the vacuum in the film forming chamber 7 of the
ターゲットホルダー2に図3(a)に示すようなRF電圧が印加されると、カソード電圧は、バイパスコンデンサ13があるため同図(b)に示すように負側に偏った正弦波形となる。そして、同図に斜線を付して示すように、カソード電圧が負である期間にターゲットのスパッタリングが実行され、基板12へ成膜が行われる。スパッタリングが開始してから一定期間(同図(c)に示すシーズニング期間)が経過するまでは、マスク11の表面には、パルスバイアス電源6からバイアス電圧を印加可能な十分な膜厚の透明導電膜21が堆積していないため、パルスバイアス電源6を起動してもマスク11の表面にはバイアス電圧は印加されない。そこで、本実施形態においては、上記シーズニング期間は、パルスバイアス電源6は0Vにされている。 Hereinafter, the sputtering film formation of the present invention will be described in detail.
When an RF voltage as shown in FIG. 3A is applied to the
この第2の実施形態は、第1の実施形態において高周波電源5に替えて直流電源22を備えたもので、直流電源22の負極側を抵抗23を介してターゲットホルダー2(カソード電極)に接続し、正極側を基板ホルダー3(アノード電極)に接続したDCスパッタリング装置である。この場合、使用されるターゲット材料は、導電性材料に限られる。 FIG. 7 is a front view showing a schematic configuration of the second embodiment of the sputtering film-forming apparatus according to the present invention. Here, a different part from 1st Embodiment is demonstrated.
In the second embodiment, a
3…基板ホルダー
5…高周波電源
6…パルスバイアス電源
10…ターゲット
11…マスク
12…基板
22…直流電源 2 ...
Claims (13)
- カソード電極に高電圧のカソード電圧を印加してターゲットと基板との間にプラズマを生成し、基板にマスクを介して成膜するスパッタリング成膜装置であって、
前記基板への成膜過程で、前記マスクにパルス状の負電圧を印加可能にパルスバイアス電源を備えたことを特徴とするスパッタリング成膜装置。 A sputtering film forming apparatus for generating a plasma between a target and a substrate by applying a high voltage cathode voltage to the cathode electrode, and forming a film on the substrate through a mask,
A sputtering film forming apparatus comprising a pulse bias power source capable of applying a pulsed negative voltage to the mask during a film forming process on the substrate. - 前記カソード電圧は、高周波電圧であり、
前記パルスバイアス電源は、前記カソード電圧に同期して駆動し、該カソード電圧が正の時に前記パルス状の負電圧を出力して前記マスクに負電圧を印加することを特徴とする請求項1記載のスパッタリング成膜装置。 The cathode voltage is a high frequency voltage,
2. The pulse bias power source is driven in synchronization with the cathode voltage, and when the cathode voltage is positive, outputs the pulsed negative voltage to apply a negative voltage to the mask. Sputter deposition system. - 前記カソード電圧は、直流電圧であり、
前記パルスバイアス電源は、前記カソード電圧が印加された状態で、一定周期の前記パルス状の負電圧を出力して前記マスクに前記カソード電圧よりも電圧の絶対値が大きい負電圧を印加することを特徴とする請求項1記載のスパッタリング成膜装置。 The cathode voltage is a DC voltage,
The pulse bias power source outputs the pulse-shaped negative voltage having a constant period in a state where the cathode voltage is applied, and applies a negative voltage having an absolute value larger than the cathode voltage to the mask. The sputtering film forming apparatus according to claim 1. - 前記基板に成膜される薄膜は、導電性の膜であり、
前記マスクは、非導電性材料で形成されたものである、
ことを特徴とする請求項1~3のいずれか1項に記載のスパッタリング成膜装置。 The thin film formed on the substrate is a conductive film,
The mask is made of a non-conductive material.
The sputtering film-forming apparatus according to any one of claims 1 to 3, wherein: - 前記マスクは、導電性材料で形成されたものであることを特徴とする請求項1~3のいずれか1項に記載のスパッタリング成膜装置。 4. The sputtering film forming apparatus according to claim 1, wherein the mask is made of a conductive material.
- カソード電極に高電圧のカソード電圧を印加してターゲットと基板との間にプラズマを生成し、基板にマスクを介して成膜するスパッタリング成膜方法であって、
前記基板への成膜過程で、前記マスクにパルス状の負電圧を印加することを特徴とするスパッタリング成膜方法。 A sputtering film forming method in which a high voltage cathode voltage is applied to a cathode electrode to generate plasma between a target and a substrate, and a film is formed on the substrate through a mask,
A sputtering film forming method, wherein a pulsed negative voltage is applied to the mask in the film forming process on the substrate. - 前記カソード電圧は、高周波電圧であり、前記カソード電圧が正の時に前記パルス状の負電圧を前記マスクに印加することを特徴とする請求項6記載のスパッタリング成膜方法。 The sputtering film forming method according to claim 6, wherein the cathode voltage is a high-frequency voltage, and the pulsed negative voltage is applied to the mask when the cathode voltage is positive.
- 前記カソード電圧は、直流電圧であり、前記カソード電圧が印加された状態で、該カソード電圧よりも電圧値の絶対値が大きい一定周期の前記パルス状の負電圧を前記マスクに印加することを特徴とする請求項6記載のスパッタリング成膜方法。 The cathode voltage is a direct current voltage, and the pulse-like negative voltage having a constant period whose absolute value is larger than the cathode voltage is applied to the mask in a state where the cathode voltage is applied. The sputtering film forming method according to claim 6.
- 前記マスクには、成膜が開始されてから、予め定められた時間経過後に前記パルス状の負電圧の印加が開始されることを特徴とする請求項6~8のいずれか1項に記載のスパッタリング成膜方法。 9. The application of the pulse-like negative voltage to the mask after a predetermined time has elapsed after film formation is started. Sputtering film forming method.
- 前記基板に成膜される薄膜は、導電性の膜であり、
前記マスクは、非導電性材料で形成されたものである、
ことを特徴とする請求項6~8のいずれか1項に記載のスパッタリング成膜方法。 The thin film formed on the substrate is a conductive film,
The mask is made of a non-conductive material.
The sputtering film-forming method according to any one of claims 6 to 8, wherein: - 前記基板に成膜される薄膜は、導電性の膜であり、
前記マスクは、非導電性材料で形成されたものである、
ことを特徴とする請求項9記載のスパッタリング成膜方法。 The thin film formed on the substrate is a conductive film,
The mask is made of a non-conductive material.
The sputtering film-forming method according to claim 9. - 前記マスクは、導電性材料で形成されたものであることを特徴とする請求項6~8のいずれか1項に記載のスパッタリング成膜方法。 9. The sputtering film forming method according to claim 6, wherein the mask is formed of a conductive material.
- 前記マスクは、導電性材料で形成されたものであることを特徴とする請求項9記載のスパッタリング成膜方法。 10. The sputtering film forming method according to claim 9, wherein the mask is made of a conductive material.
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JPH09310167A (en) * | 1996-05-21 | 1997-12-02 | Toshiba Corp | Sheet type magnetron sputtering device |
JP2005240081A (en) * | 2004-02-25 | 2005-09-08 | Matsushita Electric Ind Co Ltd | Plastic film deposition system |
WO2010055851A1 (en) * | 2008-11-14 | 2010-05-20 | 東京エレクトロン株式会社 | Substrate processing system |
JP2011231343A (en) * | 2010-04-23 | 2011-11-17 | Ulvac Japan Ltd | Vacuum deposition apparatus |
JP2012132053A (en) * | 2010-12-21 | 2012-07-12 | Panasonic Corp | Sputtering apparatus and sputtering method |
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JPH09310167A (en) * | 1996-05-21 | 1997-12-02 | Toshiba Corp | Sheet type magnetron sputtering device |
JP2005240081A (en) * | 2004-02-25 | 2005-09-08 | Matsushita Electric Ind Co Ltd | Plastic film deposition system |
WO2010055851A1 (en) * | 2008-11-14 | 2010-05-20 | 東京エレクトロン株式会社 | Substrate processing system |
JP2011231343A (en) * | 2010-04-23 | 2011-11-17 | Ulvac Japan Ltd | Vacuum deposition apparatus |
JP2012132053A (en) * | 2010-12-21 | 2012-07-12 | Panasonic Corp | Sputtering apparatus and sputtering method |
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