WO2015025823A1 - Dispositif de formation de film de pulvérisation cathodique et procédé de formation de film de pulvérisation cathodique - Google Patents

Dispositif de formation de film de pulvérisation cathodique et procédé de formation de film de pulvérisation cathodique Download PDF

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Publication number
WO2015025823A1
WO2015025823A1 PCT/JP2014/071588 JP2014071588W WO2015025823A1 WO 2015025823 A1 WO2015025823 A1 WO 2015025823A1 JP 2014071588 W JP2014071588 W JP 2014071588W WO 2015025823 A1 WO2015025823 A1 WO 2015025823A1
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WO
WIPO (PCT)
Prior art keywords
mask
voltage
substrate
film
film forming
Prior art date
Application number
PCT/JP2014/071588
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English (en)
Japanese (ja)
Inventor
水村　通伸
Original Assignee
株式会社ブイ・テクノロジー
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Application filed by 株式会社ブイ・テクノロジー filed Critical 株式会社ブイ・テクノロジー
Priority to CN201480046504.5A priority Critical patent/CN105492650A/zh
Priority to KR1020167000917A priority patent/KR20160045667A/ko
Publication of WO2015025823A1 publication Critical patent/WO2015025823A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3447—Collimators, shutters, apertures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3464—Operating strategies
    • H01J37/3467—Pulsed operation, e.g. HIPIMS

Definitions

  • the present invention relates to a sputtering film forming apparatus for forming a film on a substrate opposed to a target through a mask, and more particularly to a sputtering film forming apparatus and a sputtering film forming method capable of cleaning a mask while forming a film. It is.
  • a film forming apparatus having a mask cleaning function has completed the deposition of an organic compound using a mask in a decompressed film forming chamber, and then brought the film forming chamber to atmospheric pressure, A high-frequency voltage is applied to the mask to excite the gas introduced into the film formation chamber to generate plasma, thereby removing the organic compound attached to the mask (see, for example, Patent Document 1).
  • an object of the present invention is to provide a sputtering film forming apparatus and a sputtering film forming method capable of dealing with such problems and cleaning a mask while forming a film.
  • the sputtering film forming apparatus generates a plasma between a target and a substrate by applying a high cathode voltage to the cathode electrode, and forms a plasma on the substrate through a mask.
  • a sputtering film forming apparatus for forming a film comprising a pulse bias power source capable of applying a pulsed negative voltage to the mask during a film forming process on the substrate.
  • the sputtering film forming method according to the second invention is a sputtering film forming method in which a high voltage cathode voltage is applied to the cathode electrode to generate plasma between the target and the substrate, and the film is formed on the substrate through a mask. In the film forming process on the substrate, a pulsed negative voltage is applied to the mask.
  • a thin film deposited on the surface of the mask is inactivated by applying a pulsed negative voltage to the mask during the film formation process on the substrate performed by applying a high cathode voltage to the cathode electrode. It can be removed by striking with gas cations. Accordingly, the mask can be cleaned while the film is formed, and the throughput of the film formation substrate can be improved.
  • FIG. 3 is a timing chart showing the application timing of the bias voltage in the first embodiment. It is a figure explaining the film-forming of the seasoning period in the said 1st Embodiment, (a) shows the time of film-forming start, (b) shows the state which film-forming advanced. It is explanatory drawing shown about the mask washing
  • FIG. 1 is a front view showing a schematic configuration of a first embodiment of a sputtering film forming apparatus according to the present invention.
  • This sputtering film forming apparatus is an RF sputtering apparatus that generates a plasma between a target and a substrate by applying a high-frequency voltage to a target holder, and forms a film on the substrate through a mask. 2, a substrate holder 3, a shutter 4, a high-frequency power source 5, and a pulse bias power source 6.
  • the vacuum chamber 1 is a sealed container that forms a film forming chamber 7 therein, and includes a gas introduction port 8 and an exhaust port 9. Then, the air or sputtering gas in the film forming chamber 7 is exhausted by a vacuum pump (not shown) connected to the exhaust port 9 so that the inside of the film forming chamber 7 can be maintained at a certain degree of vacuum. ing. Further, a gas cylinder (not shown) of an inert gas such as argon (Ar) gas is connected to the gas introduction port 8 by a pipe so that the sputtering gas can be introduced into the film forming chamber 7. .
  • argon (Ar) gas is connected to the gas introduction port 8 by a pipe so that the sputtering gas can be introduced into the film forming chamber 7. .
  • a target holder 2 is disposed in the film forming chamber 7 of the vacuum chamber 1.
  • the target holder 2 is used to fix and hold the target 10 and is formed of a metal material in a state of being electrically insulated from the vacuum chamber 1.
  • the target holder 2 may be provided with a water channel so that cooling water for cooling the target 10 can be introduced from the outside as needed.
  • a substrate holder 3 is disposed so as to face the target holder 2.
  • the substrate holder 3 holds the substrate 12 in a state in which a mask 11 made of, for example, a resin film provided with a plurality of opening patterns is in close contact with the film formation surface of the substrate 12, and is formed of a metal material. Yes.
  • the mask 11 is not limited to a non-conductive material such as a resin film, and may be a conductive metal mask.
  • a non-conductive mask when the thin film to be formed is a conductive film, either a non-conductive mask or a conductive metal mask may be used.
  • the thin film to be formed when the thin film to be formed is a non-conductive film, it is possible to use a conductive metal mask or a composite mask in which a conductive thin film is deposited on the target side surface of the non-conductive mask. Good.
  • the case where the thin film to be formed is a conductive film and the mask 11 is a non-conductive resin film will be described.
  • the target holder 2 and the substrate holder 3 may be arranged in any manner in the film forming chamber 7 of the vacuum chamber 1.
  • the target holder 2 and the substrate holder 3 may be opposed to each other in the vertical direction, or may be arranged to be opposed to the left and right.
  • the mask 11 is made of a film as in the present embodiment, the target holder 2 and the substrate holder 3 are disposed so as to face each other with the substrate holder 3 on the lower side, or the vacuum chamber 7. It is desirable to arrange them so as to be inclined with respect to the vertical axis. Thereby, since the film mask 11 hangs down by its own weight, the mask 11 can be brought into close contact with the film formation surface of the substrate 12.
  • a shutter 4 is provided between the target holder 2 and the substrate holder 3.
  • This shutter 4 is for controlling the start and end timing of film formation, and is provided so that the passage of sputtered particles 19 (see FIG. 4) flying from the target 10 toward the substrate 12 can be opened and closed. That is, when the shutter 4 moves in the direction of arrow A shown in FIG. 1 and the passage of the sputtered particles 19 is opened, film formation starts, and the shutter 4 moves in the direction of arrow B shown in FIG. When is closed, the film formation is completed. Thereby, the film thickness of the thin film pattern formed can be controlled.
  • the state where the passage of the sputtered particles 19 is closed by the shutter 4 is referred to as “the shutter 4 is closed”, and the state where the passage of the sputtered particles 19 is opened is referred to as “the shutter 4 is opened”. .
  • a high frequency power source (RF power source) 5 is provided in electrical connection with the target holder 2.
  • the high-frequency power source 5 supplies a high-frequency power of 13.56 MHz to the target holder 2 and applies a high-frequency voltage (RF voltage) to the target holder 2 to generate plasma between the target 10 and the substrate 12.
  • a high-frequency matching unit (not shown) for adjusting the high-frequency power is provided.
  • the target holder 2 side is a cathode electrode
  • the substrate holder 3 side is a ground electrode (anode electrode).
  • reference numeral 13 denotes a bypass capacitor connected in series to the target holder 2
  • reference numeral 14 denotes, for example, a portion of the target holder 2 other than the portion of the target 10 where the anode ions face the substrate 12. This is a shield member for preventing collision, and an opening 15 is provided corresponding to the central region of the target 10.
  • a pulse bias power source 6 is provided on the surface of the mask 11 on the target 10 side so as to be energized.
  • the pulse bias power source 6 is driven in synchronization with the cathode voltage, and is driven to be turned on when the cathode voltage is positive to output a pulsed negative voltage and to apply a bias voltage to the mask 11. .
  • the pulse bias power source 6 is inserted between the bias electrode 16 contacting the surface of the mask 11 and the bias electrode 16 and the pulse bias power source 6 as shown in FIG. Is connected in series with a limiting resistor 17.
  • step S1 preparation for film formation is performed. Specifically, the vacuum in the film forming chamber 7 of the vacuum chamber 1 is broken, and a target 10 of, for example, ITO (a composite oxide film forming material mainly composed of indium-tin) is placed on the target holder 2 in the film forming chamber 7. It is attached.
  • a target 10 of, for example, ITO a composite oxide film forming material mainly composed of indium-tin
  • the substrate 12 is placed on the substrate holder 3, and the mask 11 is placed in close contact with the film forming surface of the substrate 12. Thereafter, a bias electrode 16 connected to the pulse bias power source 6 is brought into contact with the surface of the mask 11.
  • step S2 preparation for starting film formation is performed. Specifically, when the attachment of the target 10 and the substrate 12 is completed, the vacuum chamber 1 is closed. Then, an exhaust valve (not shown) provided on the exhaust port 9 side of the vacuum chamber 1 is gradually opened, and the air in the film forming chamber 7 is exhausted by the vacuum pump. At this time, the gas introduction valve (not shown) provided on the gas introduction port 8 side is closed. The shutter 4 is also closed.
  • the gas introduction valve is opened, and Ar gas adjusted to a constant flow rate by, for example, a mass flow controller is introduced. Subsequently, the exhaust amount of the exhaust pump is adjusted by adjusting the exhaust valve, and the total gas pressure in the film forming chamber 7 is adjusted to a predetermined value.
  • step S3 the transparent conductive film 21 is formed. Specifically, when the gas pressure in the film forming chamber 7 reaches a predetermined value, the high-frequency power source 5 is activated, and a predetermined high-frequency (RF) voltage as shown in FIG. Is done. This high frequency power is adjusted by a high frequency matching device and a power output.
  • RF high-frequency
  • the Ar gas in the film formation chamber 7 is ionized, and plasma is generated between the target 10 and the shutter 4. Then, when pre-sputtering is performed for a certain time and the impurities on the surface of the target 10 are removed, the shutter 4 is opened and sputtering film formation on the substrate 12 is started.
  • the cathode voltage has a sine waveform biased to the negative side as shown in FIG. Then, as shown by hatching in the figure, sputtering of the target is performed during a period in which the cathode voltage is negative, and film formation is performed on the substrate 12. From the start of sputtering until the passage of a certain period (seasoning period shown in FIG. 5C), the transparent conductive film having a sufficient thickness to which a bias voltage can be applied from the pulse bias power source 6 is applied to the surface of the mask 11. Since the film 21 is not deposited, no bias voltage is applied to the surface of the mask 11 even when the pulse bias power supply 6 is activated. Therefore, in the present embodiment, the pulse bias power source 6 is set to 0 V during the seasoning period.
  • the ionized Ar gas cation 18 is attracted to the target 10 side when the cathode voltage is negative.
  • the sputtered particles 19 are blown off by collision.
  • the sputtered particles 19 thus blown off fly toward the substrate 12 and adhere to the surface of the substrate 12 through the opening pattern 20 of the mask 11 as shown in FIG. Is done.
  • the sputtered particles 19 adhere to the surface of the mask 11 and the transparent conductive film 21 is deposited.
  • film formation is performed in the target sputtering period in which the cathode voltage is negative.
  • the pulse bias power supply 6 When the seasoning period elapses, the pulse bias power supply 6 is activated as shown in FIG. Then, during the period when the cathode voltage is positive and sputtering is stopped (target sputtering stop period shown in FIG. 5B), the pulse bias power supply 6 outputs a negative voltage and is deposited on the surface of the mask 11. A pulsed bias voltage ( ⁇ Vb) is applied to 21. As a result, as shown in FIG. 5, the ionized Ar gas cation 18 is attracted to the mask 11 side and hits the transparent conductive film 21 deposited on the surface of the mask 11 as shown by the arrow in FIG. Bombardment is performed (mask cleaning).
  • the pulse bias power source 6 is synchronized with the cathode voltage as shown in FIG.
  • the voltage applied to the mask 11 is controlled to 0 V (the pulse bias power supply 6 is turned off).
  • FIG. 6A normal sputtering film formation using the mask 11 is started again, and the transparent conductive film 21 is deposited on the surface of the substrate 12 and the mask 11 as shown in FIG. 6B. To do.
  • step S4 the substrate is taken out. Specifically, the exhaust valve and the gas introduction valve are closed, a leak valve (not shown) is opened, and the vacuum in the film forming chamber 7 of the vacuum chamber 1 is broken. Thereby, the film formation chamber 7 can be opened and the substrate 12 can be taken out. When the substrate 12 is taken out, the bias electrode 16 is retracted from the surface of the mask 11 to the outside of the surface.
  • FIG. 7 is a front view showing a schematic configuration of the second embodiment of the sputtering film-forming apparatus according to the present invention.
  • a DC power supply 22 is provided instead of the high frequency power supply 5 in the first embodiment, and the negative electrode side of the DC power supply 22 is connected to the target holder 2 (cathode electrode) via a resistor 23.
  • the positive electrode side is connected to the substrate holder 3 (anode electrode).
  • the target material used is limited to a conductive material.
  • the pulse bias power source 6 in the second embodiment outputs a negative pulse voltage having a constant cycle in a state where the cathode voltage ( ⁇ Vc) is applied to the target holder 2, and outputs the cathode voltage ( A bias voltage ( ⁇ Vb) having a larger absolute value than ⁇ Vc) can be applied (Vc ⁇ Vb).
  • a negative DC voltage (cathode voltage) of several hundred volts is constantly applied to the cathode electrode during film formation, and the target 10 and the substrate 12 During this time, plasma is generated to form a film on the substrate 12.
  • the target 10 is struck by argon cations 18 generated by the Ar gas being turned into plasma, and the sputtered particles 19 bounced thereby are deposited on the substrate 12.
  • a conductive film is formed.
  • the pulse bias power source 6 sets the applied voltage to the mask 11 to 0 V during the seasoning period after the start of film formation, and a pulse-like negative voltage with a constant cycle after the seasoning period has elapsed. And a bias voltage (-Vb) having a voltage absolute value larger than the cathode voltage (-Vc) is applied to the mask 11 (Vc ⁇ Vb).
  • a pulsed bias voltage ( ⁇ Vb) is applied to the mask 11
  • the argon cations 18 are attracted to the mask 11 side and deposited on the surface of the mask 11 as in the first embodiment. Ion bombardment is performed by hitting the conductive film (mask cleaning).
  • the sputtering film forming apparatus of the present invention by applying a pulsed negative voltage to the mask 11 in the film forming process performed by applying a high cathode voltage to the cathode electrode, The thin film deposited on the surface can be removed by hitting with an inert gas cation 18. Accordingly, the mask 11 can be cleaned while the film is formed, and the throughput of the film formation substrate can be improved.
  • the pulse bias power source 6 is stopped and the applied voltage to the mask 11 is set to 0 V in the seasoning period has been described.
  • the present invention is not limited to this, and the high frequency power source 5 or the DC power source is used.
  • the pulse bias power supply 6 may be activated at the same time as the activation of the voltage 22 so that a negative voltage having a constant period is applied to the mask 11.
  • the bias voltage is not applied to the conductive film even when the pulse bias power supply 6 is activated until a conductive film having a sufficient thickness is deposited on the entire surface of the mask 11 and the bias voltage can be applied.
  • the mask cleaning function is not demonstrated.
  • the film formed on the substrate 12 is a conductive film
  • the mask 11 is a conductive metal mask or a composite mask in which a metal mask and a resin film are in close contact.
  • the film to be formed may be a non-conductive film.
  • the present invention is not limited to this and may be an in-line type sputtering film forming apparatus.
  • a load lock chamber is provided on the upstream side in the transport direction of the substrate 12 with the film forming chamber 7 therebetween, and an unload chamber is provided on the downstream side.
  • the gate valve on the upstream side of the load lock chamber is opened, and the substrate 12 is carried into the load lock chamber.
  • the gate valve on the downstream side of the load lock chamber is opened, and the substrate 12 is carried into the film forming chamber 7 and set in the substrate holder 3.
  • the downstream gate valve is closed, the mask 11 previously held in the mask holder in the film forming chamber 7 is loaded and placed on the substrate 12, and the bias electrode 16 is brought into contact with the surface of the mask 11. .
  • the bias electrode 16 is retracted, and then the mask 11 is unloaded.
  • the gate valve on the downstream side of the film formation chamber 7 is opened, and the substrate 12 is carried out to the unload chamber.
  • the gate valve on the downstream side of the film formation chamber 7 is closed, and the substrate 12 can be taken out by breaking the vacuum in the unload chamber.

Abstract

La présente invention concerne un dispositif de formation de film de pulvérisation cathodique dans lequel une tension de cathode haute tension est appliquée à une électrode de cathode pour générer un plasma entre une cible (10) et un substrat (12), formant ainsi un film sur le substrat (12) à travers un masque (11). Le dispositif de formation de film de pulvérisation cathodique est équipé d'une source d'alimentation de polarisation d'impulsions (6) qui permet l'application d'une tension négative de type à impulsions pour le masque (11) dans le processus de formation du film sur le substrat (12). Cette constitution permet au masque d'être lavé pendant la formation du film.
PCT/JP2014/071588 2013-08-22 2014-08-18 Dispositif de formation de film de pulvérisation cathodique et procédé de formation de film de pulvérisation cathodique WO2015025823A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN201480046504.5A CN105492650A (zh) 2013-08-22 2014-08-18 溅射成膜装置以及溅射成膜方法
KR1020167000917A KR20160045667A (ko) 2013-08-22 2014-08-18 스퍼터링 성막 장치 및 스퍼터링 성막 방법

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2013172107A JP2015040330A (ja) 2013-08-22 2013-08-22 スパッタリング成膜装置及びスパッタリング成膜方法
JP2013-172107 2013-08-22

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WO2015025823A1 true WO2015025823A1 (fr) 2015-02-26

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PCT/JP2014/071588 WO2015025823A1 (fr) 2013-08-22 2014-08-18 Dispositif de formation de film de pulvérisation cathodique et procédé de formation de film de pulvérisation cathodique

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JP (1) JP2015040330A (fr)
KR (1) KR20160045667A (fr)
CN (1) CN105492650A (fr)
TW (1) TW201522676A (fr)
WO (1) WO2015025823A1 (fr)

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JP6656720B2 (ja) * 2016-01-07 2020-03-04 株式会社ジャパンディスプレイ 電極の作製方法、および電極を備える表示装置の作製方法
KR102355296B1 (ko) 2017-08-08 2022-01-25 삼성전자주식회사 반도체 메모리 장치 및 이의 제조를 위한 반도체 메모리 제조 장치
CN109652761B (zh) * 2019-01-30 2021-01-26 惠科股份有限公司 镀膜方法及镀膜装置
US20220056571A1 (en) * 2019-11-28 2022-02-24 Ulvac, Inc. Film Forming Method

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09310167A (ja) * 1996-05-21 1997-12-02 Toshiba Corp 枚葉式マグネトロンスパッタリング装置
JP2005240081A (ja) * 2004-02-25 2005-09-08 Matsushita Electric Ind Co Ltd プラスチックフィルム成膜装置
WO2010055851A1 (fr) * 2008-11-14 2010-05-20 東京エレクトロン株式会社 Système de traitement de substrat
JP2011231343A (ja) * 2010-04-23 2011-11-17 Ulvac Japan Ltd 真空蒸着装置
JP2012132053A (ja) * 2010-12-21 2012-07-12 Panasonic Corp スパッタリング装置およびスパッタリング方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101271869B (zh) 2007-03-22 2015-11-25 株式会社半导体能源研究所 发光器件的制造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09310167A (ja) * 1996-05-21 1997-12-02 Toshiba Corp 枚葉式マグネトロンスパッタリング装置
JP2005240081A (ja) * 2004-02-25 2005-09-08 Matsushita Electric Ind Co Ltd プラスチックフィルム成膜装置
WO2010055851A1 (fr) * 2008-11-14 2010-05-20 東京エレクトロン株式会社 Système de traitement de substrat
JP2011231343A (ja) * 2010-04-23 2011-11-17 Ulvac Japan Ltd 真空蒸着装置
JP2012132053A (ja) * 2010-12-21 2012-07-12 Panasonic Corp スパッタリング装置およびスパッタリング方法

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CN105492650A (zh) 2016-04-13
TW201522676A (zh) 2015-06-16
KR20160045667A (ko) 2016-04-27
JP2015040330A (ja) 2015-03-02

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