TW201522676A - 濺鍍成膜裝置及濺鍍成膜方法 - Google Patents
濺鍍成膜裝置及濺鍍成膜方法 Download PDFInfo
- Publication number
- TW201522676A TW201522676A TW103128541A TW103128541A TW201522676A TW 201522676 A TW201522676 A TW 201522676A TW 103128541 A TW103128541 A TW 103128541A TW 103128541 A TW103128541 A TW 103128541A TW 201522676 A TW201522676 A TW 201522676A
- Authority
- TW
- Taiwan
- Prior art keywords
- voltage
- cover
- film
- substrate
- film formation
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3447—Collimators, shutters, apertures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3464—Operating strategies
- H01J37/3467—Pulsed operation, e.g. HIPIMS
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013172107A JP2015040330A (ja) | 2013-08-22 | 2013-08-22 | スパッタリング成膜装置及びスパッタリング成膜方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW201522676A true TW201522676A (zh) | 2015-06-16 |
Family
ID=52483598
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW103128541A TW201522676A (zh) | 2013-08-22 | 2014-08-20 | 濺鍍成膜裝置及濺鍍成膜方法 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP2015040330A (fr) |
KR (1) | KR20160045667A (fr) |
CN (1) | CN105492650A (fr) |
TW (1) | TW201522676A (fr) |
WO (1) | WO2015025823A1 (fr) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6656720B2 (ja) * | 2016-01-07 | 2020-03-04 | 株式会社ジャパンディスプレイ | 電極の作製方法、および電極を備える表示装置の作製方法 |
KR102355296B1 (ko) | 2017-08-08 | 2022-01-25 | 삼성전자주식회사 | 반도체 메모리 장치 및 이의 제조를 위한 반도체 메모리 제조 장치 |
CN109652761B (zh) * | 2019-01-30 | 2021-01-26 | 惠科股份有限公司 | 镀膜方法及镀膜装置 |
US20220056571A1 (en) * | 2019-11-28 | 2022-02-24 | Ulvac, Inc. | Film Forming Method |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09310167A (ja) * | 1996-05-21 | 1997-12-02 | Toshiba Corp | 枚葉式マグネトロンスパッタリング装置 |
JP2005240081A (ja) * | 2004-02-25 | 2005-09-08 | Matsushita Electric Ind Co Ltd | プラスチックフィルム成膜装置 |
CN101271869B (zh) | 2007-03-22 | 2015-11-25 | 株式会社半导体能源研究所 | 发光器件的制造方法 |
WO2010055851A1 (fr) * | 2008-11-14 | 2010-05-20 | 東京エレクトロン株式会社 | Système de traitement de substrat |
JP5424972B2 (ja) * | 2010-04-23 | 2014-02-26 | 株式会社アルバック | 真空蒸着装置 |
JP2012132053A (ja) * | 2010-12-21 | 2012-07-12 | Panasonic Corp | スパッタリング装置およびスパッタリング方法 |
-
2013
- 2013-08-22 JP JP2013172107A patent/JP2015040330A/ja active Pending
-
2014
- 2014-08-18 CN CN201480046504.5A patent/CN105492650A/zh active Pending
- 2014-08-18 WO PCT/JP2014/071588 patent/WO2015025823A1/fr active Application Filing
- 2014-08-18 KR KR1020167000917A patent/KR20160045667A/ko not_active Application Discontinuation
- 2014-08-20 TW TW103128541A patent/TW201522676A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
JP2015040330A (ja) | 2015-03-02 |
CN105492650A (zh) | 2016-04-13 |
KR20160045667A (ko) | 2016-04-27 |
WO2015025823A1 (fr) | 2015-02-26 |
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