CN105492650A - Sputtering film formation device and sputtering film formation method - Google Patents
Sputtering film formation device and sputtering film formation method Download PDFInfo
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- CN105492650A CN105492650A CN201480046504.5A CN201480046504A CN105492650A CN 105492650 A CN105492650 A CN 105492650A CN 201480046504 A CN201480046504 A CN 201480046504A CN 105492650 A CN105492650 A CN 105492650A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3447—Collimators, shutters, apertures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3464—Operating strategies
- H01J37/3467—Pulsed operation, e.g. HIPIMS
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The present invention is a sputtering film formation device in which a high-voltage cathode voltage is applied to a cathode electrode to generate plasma between a target (10) and a substrate (12), thereby forming a film on the substrate (12) through a mask (11). The sputtering film formation device is equipped with a pulse bias power source (6) which enables the application of a pulse-like negative voltage to the mask (11) in the process of forming the film on the substrate (12). This constitution enables the mask to be washed while forming the film.
Description
Technical field
The present invention relates to a kind of spattering filming device carrying out film forming via mask at the substrate arranged opposite relative to target, particularly a kind ofly can carry out spattering filming device and the spatter film forming method of the cleaning of mask in film forming limit, limit.
Background technology
In film deposition system in the past, the film deposition system possessing the cleaning function of mask uses mask after the evaporation completing organic compound in the filming chamber of decompression, Bu Shi filming chamber forms normal atmosphere, and high-frequency voltage is applied to mask, excite the gas importing filming chamber to produce plasma body, thus removing is attached to the above-mentioned organic compound (for example, referring to patent documentation 1) of mask.
Patent documentation 1: Japanese Unexamined Patent Publication 2012-197518 publication
But in such film deposition system in the past, the cleaning due to mask is properly implemented after relative to the film forming of substrate, so cannot film forming in the cleaning process of mask, thus the problem that the productivity that there is substrate for film deposition reduces.
Summary of the invention
Therefore, in order to tackle such problem points, the object of the present invention is to provide and a kind ofly can carry out spattering filming device and the spatter film forming method of the cleaning of mask in film forming limit, limit.
To achieve these goals, the spattering filming device anticathode electrode of the first invention applies high-tension cathode voltage and between target and substrate, generates plasma body, via mask film forming in substrate, the feature of this spattering filming device is, possesses pulsed bias power supply, it, in the film process of aforesaid substrate, can apply the negative voltage of pulse type to above-mentioned mask.
In addition, the spatter film forming method anticathode electrode of the second invention applies high-tension cathode voltage and between target and substrate, generates plasma body, via mask film forming in substrate, the feature of this spatter film forming method is, to in the film process of aforesaid substrate, above-mentioned mask is applied to the negative voltage of pulse type.
According to the present invention, anticathode electrode apply high-tension cathode voltage and carry out in the film process of substrate, removing can be knocked by the positively charged ion of rare gas element be piled up in the film on the surface of mask by applying the negative voltage of pulse type to mask.Therefore, it is possible to the cleaning of mask is carried out on film forming limit, limit, thus the productivity of substrate for film deposition can be improved.
Accompanying drawing explanation
Fig. 1 is the front view of the brief configuration of the first embodiment representing spattering filming device of the present invention.
Fig. 2 is the schema be described the spatter film forming method of above-mentioned first embodiment.
Fig. 3 is the time diagram on applying opportunity of the bias voltage representing above-mentioned first embodiment.
Fig. 4 is the figure be described the film forming of timeliness (seasoning) period of above-mentioned first embodiment, and when (a) represents that film forming starts, (b) represents the state that film forming is carried out.
Fig. 5 is the explanatory view of the mask cleaning of the spatter film forming representing above-mentioned first embodiment.
Fig. 6 is the figure be described after re-starting the film forming of the spatter film forming of above-mentioned first embodiment, and when (a) represents that film forming re-starts, (b) represents the state that film forming is carried out further.
Fig. 7 is the front view of the brief configuration of the second embodiment representing spattering filming device of the present invention.
Fig. 8 is the time diagram on applying opportunity of the bias voltage representing above-mentioned second embodiment.
Embodiment
Below, based on accompanying drawing, embodiments of the present invention are described in detail.Fig. 1 is the front view of the brief configuration of the first embodiment representing spattering filming device of the present invention.This spattering filming device is for applying high-frequency voltage to target support (holder) and generate plasma body between target and substrate, via the RF sputter equipment of mask film forming in substrate, be configured to possess vacuum chamber 1, target support 2, substrate holder 3, baffle plate 4, high frequency electric source 5 and pulsed bias power supply 6.
Above-mentioned vacuum chamber 1 is the encloses container forming filming chamber 7 in inside, possesses gas introduction port 8 and venting port 9.And, by discharging air in filming chamber 7 or sputter gas with the vacuum pump (omit and illustrate) that venting port 9 is arranged with being connected, thus certain vacuum tightness can be remained by filming chamber 7.Further, be connected by the bomb (omit and illustrate) of pipe arrangement with rare gas elementes such as argon (Ar) gases at gas introduction port 8, thus sputter gas can be imported in filming chamber 7.
Target support 2 is equipped in the filming chamber 7 of above-mentioned vacuum chamber 1.This target support 2 is fixing keeps target 10, with the state of vacuum chamber 1 electrical isolation under formed by metallic substance.In addition, target support 2 also can arrange water route as required can import for the water coolant of cooled target 10 externally to inside.
Be equipped with substrate holder 3 in the filming chamber 7 of above-mentioned vacuum chamber 1 opposedly with target support 2.This substrate holder 3 is formed by metallic substance, keeps substrate 12 under the state that the mask 11 formed at the such as resinous diaphragm being provided with multiple patterns of openings is close contact in the film formation surface of substrate 12.
In addition, the dielectric material that above-mentioned mask 11 is not limited to by resin-made diaphragm is such is formed, and also can be the metal mask of electroconductibility.In this case, when the film of institute's film forming is the film of electroconductibility, also can use any one of the metal mask of dielectric mask and electroconductibility.In addition, when the film of institute's film forming is dielectric film, also can use the metal mask of electroconductibility, or cover the compound mask of the film of electroconductibility at the target side surface of dielectric mask.In description of the present embodiment, be the film of electroconductibility to the film of institute's film forming, mask 11 is that the situation of dielectric resin-made diaphragm carries out describing.
Above-mentioned target support 2 also can at random be configured in the filming chamber 7 of vacuum chamber 1 with substrate holder 3.Such as, target support 2 and substrate holder 3 can be arranged opposite up and down, or also can left and right arranged opposite.But, as in the present embodiment, when mask 11 is diaphragm, preferably become the mode of downside with substrate holder 3 by arranged opposite to target support 2 and substrate holder about 3, or arranged opposite relative to the vertical axis ground of vacuum chamber 7.Thus, because the mask 11 of diaphragm is sagging because of deadweight, so mask 11 can be made to be close contact in the film forming face of substrate 12.
Baffle plate 4 is provided with between above-mentioned target support 2 and substrate holder 3.This baffle plate 4 is for the opportunity of the beginning and end that control film forming, and being set to can the path of sputtering particle 19 (with reference to Fig. 4) that splashes from target 10 towards substrate 12 of freely openable.That is, if baffle plate 4 moves to the arrow A direction shown in Fig. 1 and opens the path of sputtering particle 19, then start film forming, if baffle plate 4 moves to the arrow B direction shown in Fig. 1 and closes the path of sputtering particle 19, then terminate film forming.Thereby, it is possible to control the thickness of the Thinfilm pattern of institute's film forming.In addition, the path of sputtering particle 19 is called " baffle plate 4 is closed " by the state that baffle plate 4 is closed, the state that the path of sputtering particle 19 is opened is called " baffle plate 4 opens ".
Be electrically connected with above-mentioned target support 2 and possess high frequency electric source (RF power supply) 5.This high frequency electric source 5 applies high-frequency voltage (RF voltage) to produce plasma body between target 10 and substrate 12 for supplying the High frequency power of 13.56MHz to target support 2 to target support 2, possesses the illustrated high-frequency integration device of omission of adjustment High frequency power.In this case, target support 2 side becomes cathode electrode, and substrate holder 3 side becomes ground-electrode (anode electrode).In addition, in FIG, Reference numeral 13 is pass capacitors that the mode of connecting is connected with target support 2, Reference numeral 14 avoids anode ion to collide the part of the such as target support 2 beyond the part of the target 10 opposed with substrate 12 and the shield member arranged, and is provided with opening 15 accordingly with the middle section of target 10.
Target 10 side surface of above-mentioned mask 11 is provided with the pulsed bias power supply 6 that can be energized.This pulsed bias power supply 6 synchronously drives with cathode voltage, carries out the negative voltage that ON driving exports pulse type, thus apply bias voltage to mask 11 when cathode voltage is positive.In this case, as shown in Figure 1, pulsed bias power supply 6 with series connection mode be connected with and mask 11 surface contact bias electrode 16 and insert between this bias electrode 16 and pulsed bias power supply 6 for limiting the limiting resistance 17 that overcurrent flows through.
Next, the schema with reference to Fig. 2 is described using the spatter film forming method of spattering filming device as constructed as above.
First, in step sl, the preparation of film forming is carried out.Specifically, destroy the vacuum of the filming chamber 7 of vacuum chamber 1, target support 2 installation example in filming chamber 7 is as the target 10 of ITO (the composite oxides film forming material being main component with indium-Xi).
Next, substrate holder 3 arranges substrate 12, and then in the film forming face of substrate 12, mask 11 is set with touching.Then, the bias electrode 16 be connected with pulsed bias power supply 6 and the surface contact of mask 11.
In step s 2, the preparation that film forming starts is carried out.Specifically, if the installation of target 10 and substrate 12 terminates, then vacuum chamber 1 is closed.Then, open the vent valve (omitting diagram) arranged in venting port 9 side of vacuum chamber 1 gradually, discharge the air in filming chamber 7 by vacuum pump.In addition, the gas now arranged in gas introduction port 8 side imports valve (omitting diagram) and is closed.In addition, baffle plate 4 is also in pent state.
If the vacuum tightness in filming chamber 7 reaches the value of the regulation predetermined, then gas importing valve is opened, thus imports by such as mass flow controller the Ar gas being adjusted to certain flow.Then, by regulating vent valve, adjusting the free air delivery of off-gas pump, thus all gas pressure in filming chamber 7 is adjusted to the prescribed value predetermined.
In step s3, the film forming of nesa coating 21 is implemented.Specifically, if the gaseous tension in filming chamber 7 becomes prescribed value, then high frequency electric source 5 is activated, thus high frequency (RF) voltage shown in the Fig. 3 (a) of the prescribed value predetermined is applied in target 10.This High frequency power is exported by high-frequency integration device and power supply and adjusts.
If target 10 is applied in the High frequency power of regulation, then the Ar ionization of gas in filming chamber 7 and generate plasma body between target 10 and baffle plate 4.Then, the impurity that pre-sputtering certain hour removes the surface of target 10 if carry out, then baffle plate 4 is opened, thus starts relative to the spatter film forming of substrate 12.
Below, spatter film forming of the present invention is described in detail.
If apply the RF voltage shown in Fig. 3 (a) to target support 2, then owing to having pass capacitor 13, and make cathode voltage as shown in Fig. 3 (b), become the sinusoidal waveform of deflection minus side.Then, as represented in the oblique line appended by this figure, during cathode voltage is negative, carries out the sputtering of target, and film forming is carried out to substrate 12.From be splashed to through certain period (time of prescription shown in this figure (c)), because the nesa coating 21 having and can execute biased sufficient thickness from pulsed bias power supply 6 is not piled up on the surface at mask 11, even if so starting impulse grid bias power supply 6, also bias voltage can not be applied to the surface of mask 11.Therefore, in the present embodiment, the pulsed bias power supply 6 of above-mentioned time of prescription is 0V.
At above-mentioned time of prescription, as shown in Fig. 4 (a), the positively charged ion 18 of the Ar gas of ionization is attracted to target 10 side when cathode voltage is negative, as shown in this figure arrow, collides the bullet in target 10 and to fly out sputtering particle 19.Like this, the sputtering particle 19 that bullet flies out splashes towards substrate 12 side, as shown in this figure (b), by the patterns of openings 20 of mask 11, is attached to the surface of substrate 12, thus carries out film forming.Meanwhile, also adhere to sputtering particle 19 on the surface of mask 11, and pile up nesa coating 21.Like this, as shown in Fig. 3 (b), during cathode voltage is negative target sputtering, implement film forming.
If through time of prescription, then as shown in Fig. 3 (c), pulsed bias power supply 6 is activated.And, at cathode voltage for just and during stopping sputtering (target sputtering interval) shown in this figure (b), pulsed bias power supply 6 exports negative voltage, thus applies the bias voltage (-Vb) of pulse type to the nesa coating 21 on the surface being piled up in mask 11.Thus, as shown in Figure 5, the positively charged ion 18 of the Ar gas of ionization is attracted to mask 11 side, as shown in this figure arrow, knocks the nesa coating 21 on the surface being piled up in mask 11 and carries out ionic bombardment (bombardment) (mask cleaning).
Next, as shown in Fig. 3 (b), if the positive period of cathode voltage terminates, cathode voltage switches to negative, then as shown in Fig. 3 (c), with above-mentioned cathode voltage synchronously setting pulse grid bias power supply 6, thus become 0V (pulsed bias power supply 6 is OFF driving) relative to the applying voltage of mask 11.Thus, as shown in Fig. 6 (a), the common spatter film forming reusing mask 11 starts, and as shown in Fig. 6 (b), nesa coating 21 is piled up in substrate 12 and mask 11 surface.
Afterwards, spatter film forming and mask 11 clean alternately to be implemented, if through specified time of predetermining, then and closing baffle plate 4 and terminate film forming.Further, high frequency electric source 5 and pulsed bias power supply 6 become OFF.
Then, in step s 4 which, substrate is taken out.Specifically, vent valve and gas import valve and are closed, and omit illustrated leakage valve and are opened, destroy the vacuum in the filming chamber 7 of vacuum chamber 1.Thereby, it is possible to open filming chamber 7 and take out substrate 12.In addition, when taking out substrate 12, bias electrode 16 is made a concession face in the face of mask 11.
Fig. 7 is the front view of the brief configuration of the second embodiment representing spattering filming device of the present invention.Here be described with the first embodiment distinct portions.
This second embodiment is a kind of DC sputter equipment, it replaces high frequency electric source 5 in the first embodiment and possesses direct supply 22, the negative side of direct supply 22 is connected with target support 2 (cathode electrode) via resistance 23, side of the positive electrode is connected with substrate holder 3 (anode electrode).In this case, the target material used is limited to conductive material.
In addition, the pulsed bias power supply 6 of the second embodiment can under the state being applied with cathode voltage (-Vc) to target support 2, exports the negative voltage of the pulse type of constant cycle and executes to mask 11 bias voltage (-Vb) (Vc < Vb) that alive absolute value is greater than the absolute value of above-mentioned cathode voltage (-Vc).
According to this second embodiment, as shown in Fig. 8 (a), when film forming, anticathode electrode applies the negative volts DS (cathode voltage) of hundreds of volts all the time, thus plasma body is produced between target 10 and substrate 12, and carry out the film forming to substrate 12.
Specifically, identically with above-mentioned first embodiment, the argon positively charged ion 18 produced by Ar gaseous plasma knocks target 10, and the sputtering particle 19 making bullet fly out thus is piled up in the film forming of substrate 12 carrying out conducting film.
In addition, as shown in Fig. 8 (b), the time of prescription of pulsed bias power supply 6 after film forming starts, 0V is set to by the applying voltage of mask 11, after time of prescription, exporting the negative voltage of pulse type of constant cycle, the bias voltage (-Vb) (Vc < Vb) that alive absolute value is greater than the absolute value of cathode voltage (-Vc) is being executed to mask 11.Thus, when the bias voltage (-Vb) of pulse type is put on mask 11, argon positively charged ion 18 is attracted to mask 11 side, identically with the first embodiment, knock the conducting film on the surface being piled up in mask 11, and carry out ionic bombardment (mask cleaning).
Like this, according to spattering filming device of the present invention, apply high-tension cathode voltage at anticathode electrode and in the film process that carries out, by applying the negative voltage of pulse type to mask 11, and can knock by the positively charged ion 18 of rare gas element the film that removing is piled up in the surface of mask 11.Therefore, it is possible to the cleaning of mask 11 is carried out on film forming limit, limit, thus the productivity of substrate for film deposition can be improved.
In addition, in the above-described embodiment, though at time of prescription stop pulse grid bias power supply 6, and the situation that the applying voltage of mask 11 becomes 0V is illustrated, but the present invention is not limited thereto, also can startup high frequency electric source 5 or direct supply 22 while starting impulse grid bias power supply 6, mask 11 is applied to the negative voltage of constant cycle.But, until pile up the conducting film of sufficient thickness on the surface of mask 11 and the bias voltage that can be energized comprehensively, even if starting impulse grid bias power supply 6 also cannot apply bias voltage to conducting film, therefore mask cleaning function cannot be played.
In addition, in the above-described embodiment, though be illustrated in the situation that the film of substrate 12 is conducting film film forming, when mask 11 be electroconductibility metal mask, metal mask and resin-made diaphragm are touched compound mask, the film of institute's film forming also can be non-conductive film.
In addition, in the above-described embodiment, though be illustrated the spattering filming device of batch mode, the present invention is not limited thereto, also can be the spattering filming device of instant (inline) mode.In this case, it is middle for being configured to filming chamber 7, arranges load lock chamber, arrange relief chamber in downstream side at the throughput direction upstream side of substrate 12.In this case, first, open the gate valve of the upstream side of load lock chamber, substrate 12 is moved into load lock chamber.Next, after the above-mentioned gate valve of closedown is exhausted load lock chamber, opens the gate valve in the downstream side of load lock chamber, thus substrate 12 is moved in filming chamber 7, be arranged at substrate holder 3.Then, close above-mentioned downstream side gate valve, and load the mask 11 of the mask support be held in advance in filming chamber 7, be arranged on substrate 12, and, make the surface contact of bias electrode 16 and mask 11.Thereby, it is possible to carry out above-mentioned RF spatter film forming.On the other hand, if film forming terminates, then after making bias electrode 16 make a concession, unloading mask 11.Then, after filming chamber 7 is exhausted, open the gate valve in the downstream side of filming chamber 7, substrate 12 is taken out of to relief chamber.Then, close the gate valve in the downstream side of filming chamber 7, and destroy the vacuum in relief chamber, thus substrate 12 can be taken out.
Description of reference numerals
2 ... target support; 3 ... substrate holder; 5 ... high frequency electric source; 6 ... pulsed bias power supply; 10 ... target; 11 ... mask; 12 ... substrate; 22 ... direct supply.
Claims (13)
1. a spattering filming device, its anticathode electrode applies high-tension cathode voltage and between target and substrate, generates plasma body, via mask in substrate film forming, it is characterized in that,
Possess pulsed bias power supply, it is in the film process to described substrate, can apply the negative voltage of pulse type to described mask.
2. spattering filming device according to claim 1, is characterized in that,
Described cathode voltage is high-frequency voltage,
Described pulsed bias power supply and described cathode voltage synchronously drive, and when this cathode voltage is positive, export the negative voltage of described pulse type, come to apply negative voltage to described mask.
3. spattering filming device according to claim 1, is characterized in that,
Described cathode voltage is volts DS,
Described pulsed bias power supply is under the state being applied with described cathode voltage, and the negative voltage exporting the described pulse type of constant cycle executes to described mask the negative voltage that alive absolute value is greater than the absolute value of described cathode voltage.
4. the spattering filming device according to any one of claims 1 to 3, is characterized in that,
Film forming in the film of described substrate be the film of electroconductibility,
Described mask is formed by non-conductive material.
5. the spattering filming device according to any one of claims 1 to 3, is characterized in that,
Described mask is formed by conductive material.
6. a spatter film forming method, its anticathode electrode applies high-tension cathode voltage and between target and substrate, generates plasma body, via mask in substrate film forming, it is characterized in that,
In the film process to described substrate, described mask is applied to the negative voltage of pulse type.
7. spatter film forming method according to claim 6, is characterized in that,
Described cathode voltage is high-frequency voltage, when described cathode voltage is positive, the negative voltage of described pulse type is put on described mask.
8. spatter film forming method according to claim 6, is characterized in that,
Described cathode voltage is volts DS, and under the state applying described cathode voltage, the negative voltage absolute value of magnitude of voltage being greater than the described pulse type of the constant cycle of the absolute value of this cathode voltage puts on described mask.
9. the spatter film forming method according to any one of claim 6 ~ 8, is characterized in that,
Described mask starts the negative voltage starting to be applied in described pulse type after the time predetermined in film forming.
10. the spatter film forming method according to any one of claim 6 ~ 8, is characterized in that,
Film forming in the film of described substrate be the film of electroconductibility,
Described mask is formed by non-conductive material.
11. spatter film forming methods according to claim 9, is characterized in that,
Film forming in the film of described substrate be the film of electroconductibility,
Described mask is formed by non-conductive material.
12. spatter film forming methods according to any one of claim 6 ~ 8, is characterized in that,
Described mask is formed by conductive material.
13. spatter film forming methods according to claim 9, is characterized in that,
Described mask is formed by conductive material.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013-172107 | 2013-08-22 | ||
| JP2013172107A JP2015040330A (en) | 2013-08-22 | 2013-08-22 | Sputtering film deposition apparatus and sputtering film deposition method |
| PCT/JP2014/071588 WO2015025823A1 (en) | 2013-08-22 | 2014-08-18 | Sputtering film formation device and sputtering film formation method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105492650A true CN105492650A (en) | 2016-04-13 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201480046504.5A Pending CN105492650A (en) | 2013-08-22 | 2014-08-18 | Sputtering film formation device and sputtering film formation method |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP2015040330A (en) |
| KR (1) | KR20160045667A (en) |
| CN (1) | CN105492650A (en) |
| TW (1) | TW201522676A (en) |
| WO (1) | WO2015025823A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109652761A (en) * | 2019-01-30 | 2019-04-19 | 惠科股份有限公司 | Film coating method and film coating device |
| CN114729443A (en) * | 2019-11-28 | 2022-07-08 | 株式会社爱发科 | Film forming method |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6656720B2 (en) * | 2016-01-07 | 2020-03-04 | 株式会社ジャパンディスプレイ | Method for manufacturing electrode and method for manufacturing display device including electrode |
| KR102355296B1 (en) | 2017-08-08 | 2022-01-25 | 삼성전자주식회사 | Semiconductor Memory Device and Apparatus for manufacturing the Same |
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| JPH09310167A (en) * | 1996-05-21 | 1997-12-02 | Toshiba Corp | Sheet type magnetron sputtering device |
| JP2005240081A (en) * | 2004-02-25 | 2005-09-08 | Matsushita Electric Ind Co Ltd | Plastic film deposition system |
| CN101271869B (en) | 2007-03-22 | 2015-11-25 | 株式会社半导体能源研究所 | The manufacture method of luminescent device |
| DE112009003614T5 (en) * | 2008-11-14 | 2013-01-24 | Tokyo Electron Ltd. | Substrate processing system |
| JP5424972B2 (en) * | 2010-04-23 | 2014-02-26 | 株式会社アルバック | Vacuum deposition equipment |
| JP2012132053A (en) * | 2010-12-21 | 2012-07-12 | Panasonic Corp | Sputtering apparatus and sputtering method |
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2013
- 2013-08-22 JP JP2013172107A patent/JP2015040330A/en active Pending
-
2014
- 2014-08-18 CN CN201480046504.5A patent/CN105492650A/en active Pending
- 2014-08-18 KR KR1020167000917A patent/KR20160045667A/en not_active Application Discontinuation
- 2014-08-18 WO PCT/JP2014/071588 patent/WO2015025823A1/en active Application Filing
- 2014-08-20 TW TW103128541A patent/TW201522676A/en unknown
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109652761A (en) * | 2019-01-30 | 2019-04-19 | 惠科股份有限公司 | Film coating method and film coating device |
| CN114729443A (en) * | 2019-11-28 | 2022-07-08 | 株式会社爱发科 | Film forming method |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2015025823A1 (en) | 2015-02-26 |
| KR20160045667A (en) | 2016-04-27 |
| TW201522676A (en) | 2015-06-16 |
| JP2015040330A (en) | 2015-03-02 |
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