JPS61190070A - Sputter device - Google Patents

Sputter device

Info

Publication number
JPS61190070A
JPS61190070A JP3040885A JP3040885A JPS61190070A JP S61190070 A JPS61190070 A JP S61190070A JP 3040885 A JP3040885 A JP 3040885A JP 3040885 A JP3040885 A JP 3040885A JP S61190070 A JPS61190070 A JP S61190070A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
plasma
substrate
target
film
potential
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3040885A
Inventor
Tomoe Kurosawa
Yasunori Ono
Yoichi Oshita
Tadashi Sato
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To make the formation of a sputtered film having good quality possible by disposing an electrode on the inside of a high-frequency coil which is provided in the space between a target disposed in a hermetically held vessel and a substrate and generates plasma and controlling the potential of the plasma.
CONSTITUTION: The cylindrical electrode 8 is provided on the inside of the high-frequency coil 5 connected to a high-frequency power source 7 to generate the ground potential and to form the stable plasma by stabilizing the plasma potential in a sputter device which executes sputtering by holding the target 12 consisting of a film forming material and the substrate 17 to be formed with the film so as to face each other in the vessel 1 in which gaseous Ar or the like is maintained, generating the plasma between the target 12 and the substrate 17 by the above-mentioned coil 5 and bringing the plasma ions generated in said plasma into collision against the target 12 maintained under the negative potential by a power source 16. The potentials of the target 12 and the substrate 17 connected to a power source 20 are respectively independently and optionally controlled. The formation of the film having the good characteristics on the substrate 17 is thus made possible.
COPYRIGHT: (C)1986,JPO&Japio
JP3040885A 1985-02-20 1985-02-20 Sputter device Granted JPS61190070A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3040885A JPS61190070A (en) 1985-02-20 1985-02-20 Sputter device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3040885A JPS61190070A (en) 1985-02-20 1985-02-20 Sputter device

Publications (1)

Publication Number Publication Date
JPS61190070A true true JPS61190070A (en) 1986-08-23

Family

ID=12303114

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3040885A Granted JPS61190070A (en) 1985-02-20 1985-02-20 Sputter device

Country Status (1)

Country Link
JP (1) JPS61190070A (en)

Cited By (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5234560A (en) * 1989-08-14 1993-08-10 Hauzer Holdings Bv Method and device for sputtering of films
US5431799A (en) * 1993-10-29 1995-07-11 Applied Materials, Inc. Collimation hardware with RF bias rings to enhance sputter and/or substrate cavity ion generation efficiency
US5800688A (en) * 1997-04-21 1998-09-01 Tokyo Electron Limited Apparatus for ionized sputtering
US5919342A (en) * 1997-02-26 1999-07-06 Applied Materials, Inc. Method for depositing golden titanium nitride
US5948215A (en) * 1997-04-21 1999-09-07 Tokyo Electron Limited Method and apparatus for ionized sputtering
US5961793A (en) * 1996-10-31 1999-10-05 Applied Materials, Inc. Method of reducing generation of particulate matter in a sputtering chamber
US6023038A (en) * 1997-09-16 2000-02-08 Applied Materials, Inc. Resistive heating of powered coil to reduce transient heating/start up effects multiple loadlock system
US6042706A (en) * 1997-01-14 2000-03-28 Applied Materials, Inc. Ionized PVD source to produce uniform low-particle deposition
US6042700A (en) * 1997-09-15 2000-03-28 Applied Materials, Inc. Adjustment of deposition uniformity in an inductively coupled plasma source
US6080287A (en) * 1998-05-06 2000-06-27 Tokyo Electron Limited Method and apparatus for ionized physical vapor deposition
US6103070A (en) * 1997-05-14 2000-08-15 Applied Materials, Inc. Powered shield source for high density plasma
US6132566A (en) * 1998-07-30 2000-10-17 Applied Materials, Inc. Apparatus and method for sputtering ionized material in a plasma
US6132564A (en) * 1997-11-17 2000-10-17 Tokyo Electron Limited In-situ pre-metallization clean and metallization of semiconductor wafers
US6146508A (en) * 1998-04-22 2000-11-14 Applied Materials, Inc. Sputtering method and apparatus with small diameter RF coil
US6158384A (en) * 1997-06-05 2000-12-12 Applied Materials, Inc. Plasma reactor with multiple small internal inductive antennas
US6178920B1 (en) 1997-06-05 2001-01-30 Applied Materials, Inc. Plasma reactor with internal inductive antenna capable of generating helicon wave
US6179973B1 (en) 1999-01-05 2001-01-30 Novellus Systems, Inc. Apparatus and method for controlling plasma uniformity across a substrate
US6190513B1 (en) 1997-05-14 2001-02-20 Applied Materials, Inc. Darkspace shield for improved RF transmission in inductively coupled plasma sources for sputter deposition
US6193854B1 (en) * 1999-01-05 2001-02-27 Novellus Systems, Inc. Apparatus and method for controlling erosion profile in hollow cathode magnetron sputter source
US6197165B1 (en) 1998-05-06 2001-03-06 Tokyo Electron Limited Method and apparatus for ionized physical vapor deposition
US6210539B1 (en) 1997-05-14 2001-04-03 Applied Materials, Inc. Method and apparatus for producing a uniform density plasma above a substrate
US6217718B1 (en) 1999-02-17 2001-04-17 Applied Materials, Inc. Method and apparatus for reducing plasma nonuniformity across the surface of a substrate in apparatus for producing an ionized metal plasma
US6217716B1 (en) * 1998-05-06 2001-04-17 Novellus Systems, Inc. Apparatus and method for improving target erosion in hollow cathode magnetron sputter source
US6224724B1 (en) 1995-02-23 2001-05-01 Tokyo Electron Limited Physical vapor processing of a surface with non-uniformity compensation
US6228229B1 (en) * 1995-11-15 2001-05-08 Applied Materials, Inc. Method and apparatus for generating a plasma
US6231725B1 (en) 1998-08-04 2001-05-15 Applied Materials, Inc. Apparatus for sputtering material onto a workpiece with the aid of a plasma
US6235169B1 (en) 1997-08-07 2001-05-22 Applied Materials, Inc. Modulated power for ionized metal plasma deposition
US6238528B1 (en) 1998-10-13 2001-05-29 Applied Materials, Inc. Plasma density modulator for improved plasma density uniformity and thickness uniformity in an ionized metal plasma source
US6254738B1 (en) 1998-03-31 2001-07-03 Applied Materials, Inc. Use of variable impedance having rotating core to control coil sputter distribution
US6254746B1 (en) 1996-05-09 2001-07-03 Applied Materials, Inc. Recessed coil for generating a plasma
US6254745B1 (en) 1999-02-19 2001-07-03 Tokyo Electron Limited Ionized physical vapor deposition method and apparatus with magnetic bucket and concentric plasma and material source
US6254737B1 (en) 1996-10-08 2001-07-03 Applied Materials, Inc. Active shield for generating a plasma for sputtering
US6280579B1 (en) 1997-12-19 2001-08-28 Applied Materials, Inc. Target misalignment detector
US6287435B1 (en) 1998-05-06 2001-09-11 Tokyo Electron Limited Method and apparatus for ionized physical vapor deposition
US6340417B1 (en) * 1996-03-14 2002-01-22 Advanced Micro Devices, Inc. Reactor and method for ionized metal deposition
US6345588B1 (en) 1997-08-07 2002-02-12 Applied Materials, Inc. Use of variable RF generator to control coil voltage distribution
US6359250B1 (en) 1998-07-13 2002-03-19 Applied Komatsu Technology, Inc. RF matching network with distributed outputs
US6361661B2 (en) 1997-05-16 2002-03-26 Applies Materials, Inc. Hybrid coil design for ionized deposition
US6368469B1 (en) 1996-05-09 2002-04-09 Applied Materials, Inc. Coils for generating a plasma and for sputtering
US6375810B2 (en) 1997-08-07 2002-04-23 Applied Materials, Inc. Plasma vapor deposition with coil sputtering
US6451179B1 (en) 1997-01-30 2002-09-17 Applied Materials, Inc. Method and apparatus for enhancing sidewall coverage during sputtering in a chamber having an inductively coupled plasma
US6475356B1 (en) 1996-11-21 2002-11-05 Applied Materials, Inc. Method and apparatus for improving sidewall coverage during sputtering in a chamber having an inductively coupled plasma
US6474258B2 (en) 1999-03-26 2002-11-05 Tokyo Electron Limited Apparatus and method for improving plasma distribution and performance in an inductively coupled plasma
US6497796B1 (en) 1999-01-05 2002-12-24 Novellus Systems, Inc. Apparatus and method for controlling plasma uniformity across a substrate
US6514390B1 (en) 1996-10-17 2003-02-04 Applied Materials, Inc. Method to eliminate coil sputtering in an ICP source
US6565717B1 (en) 1997-09-15 2003-05-20 Applied Materials, Inc. Apparatus for sputtering ionized material in a medium to high density plasma
US6579426B1 (en) 1997-05-16 2003-06-17 Applied Materials, Inc. Use of variable impedance to control coil sputter distribution
US6599399B2 (en) 1997-03-07 2003-07-29 Applied Materials, Inc. Sputtering method to generate ionized metal plasma using electron beams and magnetic field
US6652717B1 (en) 1997-05-16 2003-11-25 Applied Materials, Inc. Use of variable impedance to control coil sputter distribution
US6660134B1 (en) 1998-07-10 2003-12-09 Applied Materials, Inc. Feedthrough overlap coil
JP2004506090A (en) * 2000-03-10 2004-02-26 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated Method and apparatus for performing high-pressure physical vapor deposition
JP2006307243A (en) * 2005-04-26 2006-11-09 Toyo Advanced Technologies Co Ltd Magnetron sputtering film deposition system with multiplex magnetic poles, and film deposition method therefor
US8398832B2 (en) 1996-05-09 2013-03-19 Applied Materials Inc. Coils for generating a plasma and for sputtering

Cited By (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5234560A (en) * 1989-08-14 1993-08-10 Hauzer Holdings Bv Method and device for sputtering of films
US5431799A (en) * 1993-10-29 1995-07-11 Applied Materials, Inc. Collimation hardware with RF bias rings to enhance sputter and/or substrate cavity ion generation efficiency
US6224724B1 (en) 1995-02-23 2001-05-01 Tokyo Electron Limited Physical vapor processing of a surface with non-uniformity compensation
US6264812B1 (en) 1995-11-15 2001-07-24 Applied Materials, Inc. Method and apparatus for generating a plasma
US6228229B1 (en) * 1995-11-15 2001-05-08 Applied Materials, Inc. Method and apparatus for generating a plasma
US6297595B1 (en) 1995-11-15 2001-10-02 Applied Materials, Inc. Method and apparatus for generating a plasma
US6340417B1 (en) * 1996-03-14 2002-01-22 Advanced Micro Devices, Inc. Reactor and method for ionized metal deposition
US6254746B1 (en) 1996-05-09 2001-07-03 Applied Materials, Inc. Recessed coil for generating a plasma
US8398832B2 (en) 1996-05-09 2013-03-19 Applied Materials Inc. Coils for generating a plasma and for sputtering
US6368469B1 (en) 1996-05-09 2002-04-09 Applied Materials, Inc. Coils for generating a plasma and for sputtering
US6783639B2 (en) 1996-05-09 2004-08-31 Applied Materials Coils for generating a plasma and for sputtering
US6254737B1 (en) 1996-10-08 2001-07-03 Applied Materials, Inc. Active shield for generating a plasma for sputtering
US6514390B1 (en) 1996-10-17 2003-02-04 Applied Materials, Inc. Method to eliminate coil sputtering in an ICP source
US5961793A (en) * 1996-10-31 1999-10-05 Applied Materials, Inc. Method of reducing generation of particulate matter in a sputtering chamber
US6475356B1 (en) 1996-11-21 2002-11-05 Applied Materials, Inc. Method and apparatus for improving sidewall coverage during sputtering in a chamber having an inductively coupled plasma
US6042706A (en) * 1997-01-14 2000-03-28 Applied Materials, Inc. Ionized PVD source to produce uniform low-particle deposition
US6451179B1 (en) 1997-01-30 2002-09-17 Applied Materials, Inc. Method and apparatus for enhancing sidewall coverage during sputtering in a chamber having an inductively coupled plasma
US5919342A (en) * 1997-02-26 1999-07-06 Applied Materials, Inc. Method for depositing golden titanium nitride
US6599399B2 (en) 1997-03-07 2003-07-29 Applied Materials, Inc. Sputtering method to generate ionized metal plasma using electron beams and magnetic field
US5948215A (en) * 1997-04-21 1999-09-07 Tokyo Electron Limited Method and apparatus for ionized sputtering
US5800688A (en) * 1997-04-21 1998-09-01 Tokyo Electron Limited Apparatus for ionized sputtering
US6190513B1 (en) 1997-05-14 2001-02-20 Applied Materials, Inc. Darkspace shield for improved RF transmission in inductively coupled plasma sources for sputter deposition
US6210539B1 (en) 1997-05-14 2001-04-03 Applied Materials, Inc. Method and apparatus for producing a uniform density plasma above a substrate
US6103070A (en) * 1997-05-14 2000-08-15 Applied Materials, Inc. Powered shield source for high density plasma
US6579426B1 (en) 1997-05-16 2003-06-17 Applied Materials, Inc. Use of variable impedance to control coil sputter distribution
US6361661B2 (en) 1997-05-16 2002-03-26 Applies Materials, Inc. Hybrid coil design for ionized deposition
US6652717B1 (en) 1997-05-16 2003-11-25 Applied Materials, Inc. Use of variable impedance to control coil sputter distribution
US6158384A (en) * 1997-06-05 2000-12-12 Applied Materials, Inc. Plasma reactor with multiple small internal inductive antennas
US6178920B1 (en) 1997-06-05 2001-01-30 Applied Materials, Inc. Plasma reactor with internal inductive antenna capable of generating helicon wave
US6235169B1 (en) 1997-08-07 2001-05-22 Applied Materials, Inc. Modulated power for ionized metal plasma deposition
US6345588B1 (en) 1997-08-07 2002-02-12 Applied Materials, Inc. Use of variable RF generator to control coil voltage distribution
US6375810B2 (en) 1997-08-07 2002-04-23 Applied Materials, Inc. Plasma vapor deposition with coil sputtering
US6565717B1 (en) 1997-09-15 2003-05-20 Applied Materials, Inc. Apparatus for sputtering ionized material in a medium to high density plasma
US6042700A (en) * 1997-09-15 2000-03-28 Applied Materials, Inc. Adjustment of deposition uniformity in an inductively coupled plasma source
US6023038A (en) * 1997-09-16 2000-02-08 Applied Materials, Inc. Resistive heating of powered coil to reduce transient heating/start up effects multiple loadlock system
US6132564A (en) * 1997-11-17 2000-10-17 Tokyo Electron Limited In-situ pre-metallization clean and metallization of semiconductor wafers
US6280579B1 (en) 1997-12-19 2001-08-28 Applied Materials, Inc. Target misalignment detector
US6254738B1 (en) 1998-03-31 2001-07-03 Applied Materials, Inc. Use of variable impedance having rotating core to control coil sputter distribution
US6146508A (en) * 1998-04-22 2000-11-14 Applied Materials, Inc. Sputtering method and apparatus with small diameter RF coil
US6080287A (en) * 1998-05-06 2000-06-27 Tokyo Electron Limited Method and apparatus for ionized physical vapor deposition
US6287435B1 (en) 1998-05-06 2001-09-11 Tokyo Electron Limited Method and apparatus for ionized physical vapor deposition
US6217716B1 (en) * 1998-05-06 2001-04-17 Novellus Systems, Inc. Apparatus and method for improving target erosion in hollow cathode magnetron sputter source
US6197165B1 (en) 1998-05-06 2001-03-06 Tokyo Electron Limited Method and apparatus for ionized physical vapor deposition
US6660134B1 (en) 1998-07-10 2003-12-09 Applied Materials, Inc. Feedthrough overlap coil
US6552297B2 (en) 1998-07-13 2003-04-22 Applied Komatsu Technology, Inc. RF matching network with distributed outputs
US6359250B1 (en) 1998-07-13 2002-03-19 Applied Komatsu Technology, Inc. RF matching network with distributed outputs
US6132566A (en) * 1998-07-30 2000-10-17 Applied Materials, Inc. Apparatus and method for sputtering ionized material in a plasma
US6231725B1 (en) 1998-08-04 2001-05-15 Applied Materials, Inc. Apparatus for sputtering material onto a workpiece with the aid of a plasma
US6238528B1 (en) 1998-10-13 2001-05-29 Applied Materials, Inc. Plasma density modulator for improved plasma density uniformity and thickness uniformity in an ionized metal plasma source
US6179973B1 (en) 1999-01-05 2001-01-30 Novellus Systems, Inc. Apparatus and method for controlling plasma uniformity across a substrate
US6497796B1 (en) 1999-01-05 2002-12-24 Novellus Systems, Inc. Apparatus and method for controlling plasma uniformity across a substrate
US6193854B1 (en) * 1999-01-05 2001-02-27 Novellus Systems, Inc. Apparatus and method for controlling erosion profile in hollow cathode magnetron sputter source
US6217718B1 (en) 1999-02-17 2001-04-17 Applied Materials, Inc. Method and apparatus for reducing plasma nonuniformity across the surface of a substrate in apparatus for producing an ionized metal plasma
US6254745B1 (en) 1999-02-19 2001-07-03 Tokyo Electron Limited Ionized physical vapor deposition method and apparatus with magnetic bucket and concentric plasma and material source
US6474258B2 (en) 1999-03-26 2002-11-05 Tokyo Electron Limited Apparatus and method for improving plasma distribution and performance in an inductively coupled plasma
US6719886B2 (en) 1999-11-18 2004-04-13 Tokyo Electron Limited Method and apparatus for ionized physical vapor deposition
JP2004506090A (en) * 2000-03-10 2004-02-26 アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated Method and apparatus for performing high-pressure physical vapor deposition
JP2006307243A (en) * 2005-04-26 2006-11-09 Toyo Advanced Technologies Co Ltd Magnetron sputtering film deposition system with multiplex magnetic poles, and film deposition method therefor

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