CN109427522A - Particulate diagnostic method and particulate diagnostic device - Google Patents
Particulate diagnostic method and particulate diagnostic device Download PDFInfo
- Publication number
- CN109427522A CN109427522A CN201810531366.XA CN201810531366A CN109427522A CN 109427522 A CN109427522 A CN 109427522A CN 201810531366 A CN201810531366 A CN 201810531366A CN 109427522 A CN109427522 A CN 109427522A
- Authority
- CN
- China
- Prior art keywords
- substrate
- particle
- ion beam
- conveying
- diagnostic method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N15/00—Investigating characteristics of particles; Investigating permeability, pore-volume, or surface-area of porous materials
- G01N15/02—Investigating particle size or size distribution
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/244—Detectors; Associated components or circuits therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
- G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
- G01N23/225—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion
- G01N23/2255—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material using electron or ion using incident ion beams, e.g. proton beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N15/00—Investigating characteristics of particles; Investigating permeability, pore-volume, or surface-area of porous materials
- G01N2015/0096—Investigating consistence of powders, dustability, dustiness
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2223/00—Investigating materials by wave or particle radiation
- G01N2223/07—Investigating materials by wave or particle radiation secondary emission
- G01N2223/081—Investigating materials by wave or particle radiation secondary emission incident ion beam, e.g. proton
Abstract
The present invention provides particulate diagnostic method and particulate diagnostic device.In order to reduce the generation of particle by efficiently cleaning, the particle generating unit in ion beam irradiation apparatus is diagnosed.The particulate diagnostic method includes: conveying and irradiating step (S1), first substrate is conveyed to the irradiation position of ion beam (IB) by defined conveying circuit (L1), and irradiates ion beam (IB) to the first substrate for being transported to irradiation position；First judgment step (S2) judges that the particle adhered on the illuminated first substrate of ion beam (IB) in conveying and irradiating step (S1) be mostly is few；The second substrate is transported to irradiation position by conveying circuit (L1) when being judged as that particle is more in the first judgment step (S2) by supplying step (S3)；And second judgment step (S4), judge that the particle adhered in the second substrate for being transported to irradiation position in supplying step (S3) be mostly is few.
Description
Technical field
The present invention relates to the particulate diagnostic methods and particle for diagnosing the particle generating unit in ion beam irradiation apparatus
Diagnostic device.
Background technique
Such as it in ion implantation apparatus and ion doping apparatus electron beam irradiation device, generates due to various reasons micro-
Grain will lead to if particle generation becomes more and inject the various failures such as bad.
Therefore, a kind of cleaning method is described in patent document 1, by generating room in the plasma for constituting ion source
Interior generation hydrogen plasma shells the attachment on the wall surface for being attached to plasma generation room using its heat and sputtering etc.
It falls.
But since the generating unit of particle is not only present in ion source, be also present in the conveying mechanism of conveying substrate,
So only a part of clearing apparatus as patent document 1, cannot sufficiently reduce the generation of particle.
However, if it is desired to will all sites to the generating unit for being likely to become particle all clean, then depend on
The size of device, such as one week or so time is needed, this can make the running rate sharp fall of device.
Existing technical literature
Patent document 1: Japanese Patent Laid-Open Publication flat No. 6-267475
Summary of the invention
Therefore, it is a primary object of the present invention to which the particle generating unit in ion beam irradiation apparatus can be diagnosed, pass through
It is efficient to clean to reduce the generation of particle.
The present invention provides a kind of particulate diagnostic method, is used to diagnose the particle generating unit in ion beam irradiation apparatus,
The particulate diagnostic method includes: conveying and irradiating step, by defined conveying circuit by first substrate to the photograph of ion beam
Position conveying is penetrated, and irradiates ion beam to the first substrate for being transported to the irradiation position；First judgment step, judges
It is few that the particle adhered on the illuminated first substrate of ion beam in the conveying and irradiating step, which is mostly,；Conveying step
Suddenly, when being judged as that particle is more in first judgment step, the second substrate is transported to by the conveying circuit described
Irradiation position；And second judgment step, judge second base that the irradiation position is transported in the supplying step
It is few that the particle adhered on plate, which is mostly,.
According to such particulate diagnostic method, first substrate is transported to irradiation position first and irradiates ion beam, when sentencing
Break for adhere to particle on the first substrate it is more when, the second substrate is transported to irradiation position, judgement is attached to described the
It is that less, so if the particle being attached in the second substrate is few, then can distinguish due to ion that particle on two substrates, which is mostly,
The particle attachment of the irradiation of beam is on the first substrate.On the other hand, if the adhesion amount of the second substrate is more, can distinguish at least
Particle due to conveying adheres on the first substrate.
Thus, it is proposed, according to the invention, be due to the irradiation of ion beam due to that can distinguish and generate particle and be also due to
The conveying of substrate and generate particle, so the range of particle generating unit can be reduced from whole device, so as to pass through
It is efficient to clean to reduce the generation of particle.
Preferably, the ion beam irradiation apparatus has ion beam line forming member, and the ion beam line is formed
Component forms the ion beam line that the ion beam passes through, and the particulate diagnostic method further includes that ion beam line cleans step,
When being judged as that particle is few in second judgment step, the ion beam line cleans step to the ion beam line shape
It is cleaned at component.
If it does, the particle that then can reduce the irradiation due to ion beam and generate.
Preferably, the conveying circuit is formed as throughout multiple regions, the particulate diagnostic method further include: subregion is defeated
Step is sent, when being judged as that particle is more in second judgment step, third substrate different from each other is carried out described defeated
The district operation for sending and the second substrate being carried out in each region in irradiating step；And third judgment step, sentence
The particle adhered on the third substrate for having carried out each district operation in the subregion supplying step that breaks is more
It is few.
If it does, then when having distinguished due to conveying circuit and produce particle, it can distinguish and convey being formed
Which region of route produces particle, so as to further reduce the range of particle generating unit.
In order to reduce the particle generated due to conveying circuit, it is preferred that the particulate diagnostic method further includes defeated
Line sending road cleans step, and the conveying circuit cleaning step cleans and be judged as in the third judgment step institute more than particle
State the corresponding region of third substrate.
Such as consider following situations: conveying circuit is for example by three regions in first area, second area and third region
It is formed, third substrate passes through each region with the sequence and is transported to irradiation position.In this case, if it is assumed that first area
It is the generating unit of particle, then all passes through first area to the third substrate that first area, second area and third region convey,
So the number for the particle being attached on these third substrates is difficult to show difference and the model that is difficult to reduce particle generating unit
It encloses.
It is preferred, therefore, that progress repeated multiple times to the third substrate is each described in the subregion supplying step
District operation.
Even if if it does, then in said case, also due to making in the subregion that first area has repeatedly been repeated
The particle adhered on the third substrate of industry is especially more, so the range of particle generating unit can more reliably be reduced.
Preferably, it is cleaned in step in the ion beam line and at least one described region is cleaned, Huo Zhe
The ion beam line forming member is cleaned in the subregion supplying step.
If it does, when then capableing of the free time of conveying circuit during cleaning to ion beam line forming member
Between or make third substrate by the free time of the ion beam line during conveying circuit, such as pass through simple cleaning method
Idle route is cleaned.If can be can be improved under using the simple generation for cleaning inhibition particle
A possibility that conveying circuit and ion beam line will not become the generating unit of particle when amicron diagnoses, thus, it is possible to extend dimension
The period is protected, so as to improve the running rate of device.
In addition, being used to diagnose the particle in ion beam irradiation apparatus the present invention also provides a kind of particulate diagnostic device and producing
Raw position, the particulate diagnostic device includes: number data reception portion, receives number data, and the number data indicate attachment
The number of particle on substrate or value relevant to number；And judging part, based on by number data reception portion reception
The number data arrived, the particle for judging to adhere on the substrate is mostly to be less, and the number data reception portion reception is attached
The irradiation position of ion beam is being transported to by defined conveying circuit and in the illuminated ion beam of the irradiation position
It the several data of first of particle on first substrate and is attached to the irradiation position is transported to by the conveying circuit
The several data of second of particle in the second substrate, the judging part are based on described first severals data and judge to be attached to described the
It is few that particle on one substrate, which is mostly, and the particle based on described second several data judgement attachments on the second substrate
It is mostly few for being.
According to such particulate diagnostic device, the generating unit of particle can be automatically determined using the particulate diagnostic method
Position.
The present invention constituted as described above can diagnose the particle generating unit in ion beam irradiation apparatus, and
And the generation of particle can be reduced by efficiently cleaning.
Detailed description of the invention
Fig. 1 is the schematic diagram for indicating the structure of ion beam irradiation apparatus of present embodiment.
Fig. 2 is the flow chart for illustrating the particulate diagnostic method of same embodiment.
Fig. 3 is the flow chart for illustrating the first district operation of same embodiment.
Fig. 4 is the flow chart for illustrating the third district operation of same embodiment.
Fig. 5 is the flow chart for illustrating the 5th district operation of same embodiment.
Fig. 6 is the functional block diagram for indicating the function of particulate diagnostic device of other embodiment.
Description of symbols
100 ion beam irradiation apparatus
IB ion beam
W object
L1 conveying circuit
L2 ion beam line
The first load lock chamber of R1a
The second load lock chamber of R1b
R2 conveying chamber
R3 process chamber
Specific embodiment
Referring to attached drawing, a kind of embodiment of particulate diagnostic method of the invention is illustrated.
The particulate diagnostic method of present embodiment is for example for diagnosing ion implantation apparatus and ion doping apparatus plasma
Whether particle and particle generating unit are generated in beam irradiation apparatus 100.
Firstly, being illustrated to ion beam irradiation apparatus 100.
As shown in Figure 1, irradiation position conveying substrate W (hereinafter referred to as mesh of the ion beam irradiation apparatus 100 to ion beam IB
Mark object W) and ion beam IB is irradiated, it is formed with the ion beam line that the conveying circuit L1 and ion beam IB of conveying object W pass through
L2。
Conveying circuit L1 is formed as throughout multiple regions (room), by the load lock chamber R1 and load lock of stored target object W
Determine the adjacent conveying chamber R2 of room R1 and to from load lock chamber R1 by conveying chamber R2 conveying come object W irradiation ion
The process chamber R3 of beam IB is formed.
Load lock chamber R1 is by object W from external feeding or the region sent out to outside, and there are two fill for setting herein
It carries lock chamber R1 (hereinafter also referred to the first load lock chamber R1a and the second load lock chamber R1b).By the first gate valve V1 by
One load lock chamber R1a is separated with outside, is separated the second load lock chamber R1b with outside by the second gate valve V2.
Conveying chamber R2 is the region that object W is conveyed between load lock chamber R1 and process chamber R3, and is provided with example
Such as transfer robot target transporting mechanism (not shown).Conveying chamber R2 and the first load lock are separated by third gate valve V3
Room R1a, separates conveying chamber R2 and the second load lock chamber R1b by the 4th gate valve V4, separates conveying chamber by the 5th gate valve V5
R2 and process chamber R3, so as to which each room R1~R3 is remained vacuum state.
Process chamber R3 be receive from conveying chamber R2 conveying come object W and by the object W received to irradiation position
Set mobile region.It is provided with platen P in process chamber R3, receives object W from the target transporting mechanism；Do not scheme
The clamping device shown, the object W for keeping or being placed on platen P；Inclination angle change mechanism (not shown) changes object
The inclination angle of W；And sweep mechanism (not shown), it is scanned the edge object W with the direction intersected ion beam IB；Etc..Separately
Outside, it is not necessary that all mechanisms are centainly arranged.
Then, ion beam line L2 is illustrated.
Ion beam line L2 is formed as the irradiation position from ion source 1 to ion beam IB, is formed by multiple ion beam lines
Component is formed.Ion beam line forming member herein what can be enumerated is that: plasma generates container 2, generates in inside etc.
Gas ions；Extraction electrode 3 generates container 2 from plasma and draws ion beam IB；And mass-separator 4, pass through ion beam IB
Quality analysis select and export desired Doped ions；Etc..In addition, if ion beam irradiation apparatus 100 includes sweeping
Instrument and ion beam collimator etc. are retouched, then they are also ion beam forming member, and the scanner is using electric field or magnetic field to ion
Beam IB is scanned back and forth, and the ion beam collimator is to the ion beam IB progress parallel sweep derived from the scanner.
Then, referring to the flow chart of Fig. 2~Fig. 5, particulate diagnostic method is illustrated.
In addition, particle herein refers to the pico- grain and attached for example generated by the movable part friction of the various mechanisms
Attachment on inner wall of the various ion beam line forming members etc. be sputtered and pico- grain for generating etc. for example
Foreign matter as the bad equal reason of ion implanting.
Firstly, cleaning etc. to the glass plate for being used for example as object W, prepare one or more for particulate diagnostic
Substrate is used in diagnosis.
In the present embodiment, conveying circuit L1 is configured to that object W irradiation position can be transported to by multiple paths
It sets, prepares diagnosis substrate (hereinafter referred to as the first base with the number of path same number (hereinafter referred to as necessary number) first
Plate).As a result, by preparing the first substrate of necessary number in advance, first substrate can be made to irradiate position to arrival by object W
It is set to the All Paths that may only pass through that is, entire conveying circuit L1.In addition, the necessary number of present embodiment is 12,
But can suitably change necessary number according to the structure of conveying circuit L1, the first base of necessary number or more can also be prepared
Plate.
If particulate diagnostic starts, first substrate is conveyed to the irradiation position of ion beam IB by conveying circuit L1,
And ion beam IB (conveying and irradiating step S1) is irradiated to the first substrate for being transported to irradiation position.
Here, so that first substrate passes through each path that object W may pass through until reaching irradiation position respectively
Mode, in other words, with the first substrate of necessary number respectively reach irradiation position path be mutually different path fashion into
Row setting, the movement that ion beam IB is conveyed and irradiated to irradiation position is carried out continuously to the first substrate of necessary number.
Next, it is determined that be attached to by convey and the illuminated first substrate of ion beam IB of irradiating step S1 on particle
Being mostly is few (the first judgment step S2).
Here, carry out the judgement by operator, as at least one for judging benchmark, using being attached to through conveying and
Particle number (number after hereinafter referred to as irradiating) on the illuminated first substrate of ion beam IB of irradiating step S1.As specific
Judgment method, such as following method can be enumerated: in advance to before conveying and irradiating step S1 and in the clear of first substrate
The particle number (number before hereinafter referred to as irradiating) adhered to after washing on the first substrate is counted, based on from irradiation, the one before is counted to
The increase part (increase number or increment rate) of number is judged after irradiation.It, can also be to after irradiation as other methods
Number is compared to be judged with predetermined threshold value.
In addition, foreign body detecting device etc. can be used in the counting of particle number, the foreign body detecting device etc. is using at image
Reason etc. counts the number of particle more than such as prescribed level.
When being judged as that the particle of attachment on the first substrate is few in the first judgment step S2, terminate particulate diagnostic.
On the other hand, when being judged as that the particle of attachment on the first substrate is more in the first judgment step S2, by defeated
The diagnosis different from first substrate is conveyed (supplying step to irradiation position with substrate (hereinafter referred to as the second substrate) by line sending road L1
S3)。
It can prepare one such as by cleaning to the glass plate as object W in the same manner as first substrate
Or multiple the second substrates, based on conveying and the same reason of irradiating step S1, in order to make the second substrate pass through object W to arriving
Up to each path that may pass through until irradiation position, herein using the second substrate of necessary number.Alternatively, it is also possible to use necessity
The second substrate more than number.
Irradiation position is transported to and the particle that does not irradiate in the second substrate of ion beam IB is mostly is next, it is determined that being attached to
Few (the second judgment step S4).
Here, also carrying out the judgement by operator, specific judgment method is identical as the first judgment step S2.That is, making
For at least one for judging benchmark, using be attached to be transported to by supplying step S3 it is micro- in the second substrate of irradiation position
Grain number (number after hereinafter referred to as conveying), specifically, for example can be in advance to before supplying step S3 and in the second base
The particle number (number before hereinafter referred to as conveying) being attached in the second substrate after the cleaning of plate is counted, based on before conveying
A increase part (increase number or increment rate) for counting to number after conveying judges, to number after conveying and can also predefine
Threshold value be compared to judge.
When being judged as that the particle being attached in the second substrate is few in the second judgment step S4, it may be said that conveying and shining
The particle adhered in step S1 on the first substrate is penetrated to be due to irradiate ion beam IB to first substrate and generate.
In this case, cleaned that (ion beam line is clear to ion beam line forming member in the present embodiment
Sweep step S5).As noted previously, as ion beam line L2 is made of multiple ion beam line forming members, it is possible to by pre-
First determining sequence cleans these ion beam line forming members automatically, can also properly select ion in operator
On the basis of the cleaning method of beam line forming member and cleaning sequence etc., operator by cleaning each ion beam line shape manually
At component.
As specific cleaning method, what can be enumerated is that: for example and being scanned using magnetic field to ion beam IB
So that ion beam IB is irradiated to the inner wall such as mass-separator 4, evaporates the attachment being attached on inner wall, either
Hydrogen plasma is generated by generating in container 2 in plasma, makes to be attached on the inner wall of plasma generation container 2
Attachment evaporation, etc..In addition, due in the cleaning that the mass-separator 4 that the scanning using ion beam IB carries out waits, ion
Source 1 may pollute, it may be preferred that generating the cleaning of container 2 in the plasma that the generation using hydrogen plasma carries out
Implement the cleaning carried out using the scanning of ion beam IB before.
In the present embodiment, it utilizes in the midway that ion beam line cleans step S5 and generates on conveying circuit L1
Free time, by compared with aftermentioned conveying circuit cleans step S12 the cleaning method that can simply implement to conveying circuit
L1 is cleaned.
Specifically, following method can be enumerated as the cleaning method that can simply implement: dress is for example repeated
Carry lock chamber R1 vacuumizes and removes to atmosphere opening the particle being present in load lock chamber R1, or to irradiation position
The substrate after multiple (such as 100~200) cleaning is continuously conveyed is set, the particle being present on conveying circuit L1 is attached to
Particle, etc. is removed on the substrate.In addition, without centainly carrying out the simple cleaning.
It is same as conveying and irradiating step S1 and the first judgment step S2, the cleaning of step S5 is cleaned in ion beam line
Afterwards, new substrate is conveyed by conveying circuit L1 to the irradiation position of ion beam IB, and to the base for being transported to irradiation position
Plate irradiates ion beam IB (conveying and irradiating step S6), and the particle on substrate that judgement has been attached to ion beam IB illuminated is
It is mostly few (judgment step S7).Since purpose in this is to be identified through to clean in step S5 in ion beam line to ion beam line
Whether the cleaning of road forming member reduces the generation of particle, so using in conveying and irradiating step S6 and judgment step S7
Substrate can be fewer than necessary number.
When being judged as that the particle being attached on diagnosis substrate in judgment step S7 is few, it may be said that by ion beam
Route, which cleans in step S5, reduces the generation of particle to the cleaning of ion beam line forming member, therefore terminates particulate diagnostic.
It on the other hand, can be with when being judged as that the particle being attached on diagnosis substrate in judgment step S7 is still more
The period (S8) for needing that maintenance is carried out to ion beam irradiation apparatus 100 is mentioned, so implementing maintenance (S9) as needed.Separately
Outside, S1 can be returned to after the maintenance in S9.
Then, illustrate to be judged as in S4 the situation more than the particle being attached in the second substrate.
In such a case, it is possible to say the conveying for the second substrate that the particle being attached in the second substrate is due in S3
And generate, while it may be said that adhering in particle on the first substrate the conveying included at least due to first substrate in S1
And the particle generated.In addition, may also be comprising irradiating ion due to first substrate in the particle of attachment on the first substrate
Beam IB and the particle generated.
Which in this case, in the present embodiment, produced in order to determining in the region for forming conveying circuit L1
Particle conveys diagnosis substrate (hereinafter referred to as third the substrate) (subregion different from first substrate and the second substrate to each region
Supplying step S10).
Specifically, conveying third substrate different from each other to each region, and third substrate different from each other is carried out
The district operation that the second substrate is carried out in each region in S3.
In addition, in the same manner as first substrate and the second substrate, for example, can by the glass plate as object W into
Cleaning etc. go to prepare third substrate.
More specifically, district operation, which refers to, send the second substrate into load lock chamber R1 in S3 and to irradiation position
Conveying, the operation that the second substrate is carried out in each region during until being recycled from load lock chamber R1.
The district operation of present embodiment is the first district operation carried out in the first load lock chamber R1a；Second
The second district operation carried out in load lock chamber R1b；Passing through conveying chamber R2 in the first load lock chamber R1a and process chamber
The third district operation carried out when round-trip between R3；By conveying chamber R2 the second load lock chamber R1b and process chamber R3 it
Between it is round-trip when the 4th district operation that carries out；And the 5th district operation carried out in process chamber R3.To each other not in S10
With third substrate it is repeated multiple times carry out include process in each district operation at least part.
Hereinafter, being illustrated referring to the flow chart of Fig. 3~Fig. 5 to the first district operation~the 5th district operation, due to
It is identical operation that one district operation is other other than the gate valve of operation is different from the second district operation, and third subregion is made
It is identical operation that industry is other other than the gate valve of operation is different from the 4th district operation, so the second district operation is omitted
With the detailed description of the 4th district operation.
Firstly, the flow chart referring to Fig. 3 is illustrated the first district operation.
In the first district operation, it is first turned on the first gate valve V1 (Sa1), third substrate is sent into the first load lock chamber
R1a (Sa2) closes the first gate valve V1 (Sa3).
Then, (Sa4) is vacuumized to the first load lock chamber R1a, this backward atmosphere opening (Sa5) opens first
Gate valve V1 (Sa6).
Next, it is determined that the process (Sa7) of Sa3~Sa6 of stipulated number (such as 10 times) whether has been repeated, when not anti-
When carrying out stipulated number again, after waiting stipulated time (such as tens of seconds) (Sa8), Sa3 is returned to.On the other hand, when repeatedly
When having carried out the process of Sa3~Sa6 of stipulated number, third substrate (Sa9) is recycled from the first load lock chamber R1a, terminates the
One district operation.
In addition, being as long as similarly being operated to the second gate valve V2 progress with the first gate valve V1 for the second district operation
It can.
Then, third district operation is illustrated referring to the flow chart of Fig. 4.
The incipient stage of third district operation is identical as Sa1~Sa4 of the first district operation (Sb1~Sb4).
Then, third gate valve V3 (Sb5) is opened, the target transporting mechanisms such as transfer robot allowed in conveying chamber R2 receive
Third substrate (Sb6) is closed third gate valve V3 (Sb7).
Then, third substrate is moved near the 5th gate valve V5 (Sb8) by target transporting mechanism, opens the 5th lock
Third substrate is placed at (Sb10) on the platen P in process chamber R3, closes the 5th gate valve V5 by valve V5 (Sb9)
(Sb11)。
Hereafter, it is again turned on the 5th gate valve V5 (Sb12), the target transporting mechanism in conveying chamber R2 is allowed to receive third base
Plate (Sb13) closes the 5th gate valve V5 (Sb14).
Then, third substrate is moved near third gate valve V3 (Sb15) by target transporting mechanism, opens third
Third substrate is sent into the first load lock chamber R1a (Sb17), closed third gate valve V3 (Sb18), makes the by gate valve V3 (Sb16)
One load lock chamber R1a is to atmosphere opening (Sb19).
Next, it is determined whether the process (Sb20) of Sb4~Sb19 of stipulated number (such as 10 times) has been repeated, when
When stipulated number not being repeated, Sb4 is returned.On the other hand, when the process for Sb4~Sb19 that stipulated number has been repeated
When, the first gate valve V1 (Sb21) is opened, recycles third substrate (Sb22) from the first load lock chamber R1a, terminates third subregion and makees
Industry.
In addition, in the 4th district operation, if the second gate valve V2 similarly operate with the first gate valve V1, and
And the 4th gate valve V4 similarly operate with third gate valve V3.
Then, the 5th district operation is illustrated referring to the flow chart of Fig. 5.
The incipient stage of 5th district operation is identical as Sb1~Sb11 of third district operation (Sc1~Sc11).
Then, it keeps (clamping) to be placed on the third substrate (Sc12) on platen P by clamping device, is changed by inclination angle
Mechanism holds up platen to change the inclination angle of third substrate (Sc13), does not irradiate ion beam IB to third substrate by sweep mechanism
Ground is scanned (Sc14) to third substrate along the direction intersected with ion beam IB.
Then, being laid flat platen by inclination angle change mechanism makes the inclination angle of third substrate restore (Sc15), passes through clamping
Mechanism decontrols (release) third substrate (Sc16).
Next, it is determined that the process (Sc17) of Sc12~Sc16 of stipulated number (such as 10 times) whether has been repeated, when
When stipulated number not being repeated, Sc12 is returned.On the other hand, when the process for Sc12~Sc16 that stipulated number has been repeated
When, operation (Sc18~Sc25) same as Sb12~Sb19 of the second district operation is carried out, the first gate valve V1 is opened
(Sc26), third substrate (Sc27) is recycled from load lock chamber R1, terminates the 5th district operation.
In addition, the beginning and end of the 5th district operation can be identical as the 4th district operation.That is, the 5th district operation
Can since third substrate is sent into the second load lock chamber R1b and according to from the second load lock chamber Rb1 recycled the
Three substrates and terminate.
In the present embodiment, successively carried out in S10 the first district operation, the second district operation, third district operation,
4th district operation and the 5th district operation, but can also suitably change the sequence for carrying out each district operation.
After having carried out district operation in S10, by confirming on which third substrate in the third substrate of recycling
The particle of attachment is more, and the conveyor zones of the third substrate more than the particle of attachment are determined as to the generating unit (generating unit of particle
Position determines step S11).In other words, the district operation that the third substrate more than the particle to attachment carries out can be determined as micro-
Grain Producing reason.
In addition, being cleaned in S11 to the region for being confirmed as particle generating unit, (conveying circuit cleans step
S12)。
Specifically, when the particle adhered on the third substrate for having carried out the first district operation is more, the first load lock
Room R1a is the generating unit of particle, carry out in the first load lock chamber R1a cleaning, implement the first load lock chamber repeatedly
R1a vacuumize and to atmosphere opening, confirmation the first gate valve V1 and third gate valve V3 around, confirmation be arranged in the first load lock
Determine lid on the R1a upper wall of room, etc..
When the particle adhered on the third substrate for having carried out the second district operation is more, the second load lock chamber R1b is micro-
Grain generating unit, carry out in the second load lock chamber R1b cleaning, repeatedly implement the second load lock chamber R1b pumping it is true
It is empty and to around atmosphere opening, confirmation the second gate valve V2 and the 4th gate valve V4, confirmation is arranged in the second load lock chamber R1b
Lid on upper wall, etc..
More than the particle adhered on the third substrate for having carried out third district operation and carry out the of the 4th district operation
On three substrates when unattached more particle, third gate valve V3 is the generating unit of particle, is carried out around third gate valve V3 really
Recognize.
More than the particle adhered on the third substrate for having carried out the 4th district operation and carry out the of third district operation
On three substrates when unattached more particle, the 4th gate valve V4 is the generating unit of particle, is carried out around the 4th gate valve V4 really
Recognize.
When attached on both the third substrate for having carried out third district operation and the third substrate for having carried out the 4th district operation
Particle it is more when, it is believed that both third gate valve V3 and the 4th gate valve V4, the 5th gate valve V5 or third gate valve V3, the 4th
Gate valve V4 and the 5th gate valve V5 is entirely the generating unit of particle, carries out third gate valve V3, the 4th gate valve V4 and the 5th gate valve V5
Around confirm etc..
When the particle adhered on the third substrate for having carried out the 5th district operation is more, process chamber R3 is the generation of particle
Position confirms clamping device, inclination angle change mechanism and the sweep mechanism etc. being arranged in process chamber R3.
After the cleaning of S12, as noted previously, as due to ion beam IB irradiation and be possible to generate particle, so
S1 is returned in the present embodiment.
According to the particulate diagnostic method of this present embodiment, first by first substrate be transported to irradiation position and irradiate from
The second substrate is transported to irradiation position, judged by beamlet IB when being judged as that the particle adhered on the first substrate is more
It is that less, so if the particle adhered in the second substrate is few, then can distinguish that the particle adhered in the second substrate, which is mostly,
Particle due to the irradiation of ion beam IB adheres on the first substrate.On the other hand, if the adhesion amount of the second substrate is more,
It can distinguish and at least adhere on the first substrate due to the particle of conveying.
Particulate diagnostic method in the embodiment as a result, the irradiation of ion beam IB is due to due to that can distinguish
And generate particle and be also due to the conveying of substrate and generate particle, so particle generating unit can be reduced from whole device
Range, so as to by efficiently clean reduce particle generation.
In addition, when distinguished produce particle due to conveying circuit L1 when, due in subregion supplying step S10 and production
Raw position, which determines, has determined produce particle in which region for forming conveying circuit L1 in step S11, so can be further
Reduce the range at the position that should be cleaned.
Further, since it is repeated multiple times to mutually different third substrate carry out include process in each district operation extremely
Few a part, as long as so confirmation has carried out the third substrate after each district operation, it will be able to more accurately determine because of which point
Area's operation and be attached to particle.
In addition, due to simply being cleaned to conveying circuit L1 in the midway that ion beam line cleans step S5, so
If can be examined in the particle of next time using the simple generation for cleaning the particle that inhibition is conveyed due to substrate
A possibility that conveying circuit L1 will not become the generating unit of particle is improved when disconnected.Thus, it is possible to extend the maintenance period, so as to
To improve the running rate of device.
In addition, the present invention is not limited to the embodiments.
For example, being judged in said embodiment based on the particle number measured by foreign body detecting device etc. in base
It is few that the particle adhered on plate, which is mostly, but can also based on the figure information of the particle obtained by foreign body detecting device etc. come into
Row judgement.
In addition it is also possible to be based on the inspection result of automatic optical checking device (AOI), the particle being attached on substrate is judged
It is mostly few for being.
In addition, the process that third substrate is repeated in each district operation is not limited to the embodiment, it can
To suitably change the process being repeated, such as it is repeated in the first district operation and vacuumizes (Sa4) and opened to atmosphere
(Sa5) is put, is repeated in third district operation to the movement (Sb8) of the 5th gate valve V5 to the movement to third gate valve V3
(Sb15), clamping (Sc12) or in the 5th district operation is only repeated and unclamps (Sc16) or scanning is only repeated
(Sc14).Furthermore, it is possible to suitably change the number of occurrence.
In view of the process and the number of occurrence being repeated suitably is changed in this wise, ion beam irradiation apparatus 100 be may be constructed
For example to change the process and the number of occurrence that are repeated by input units such as touch panels by operator.
In addition, illustrate in said embodiment ion beam line clean step S5 midway to conveying circuit L1 into
Row cleans, but can also clean in the midway of subregion supplying step S10 to ion beam line forming member.
Specifically, for example, following method: closing ion beam in advance by gate valve etc. in process chamber R3
The opening of IB incidence, in this state in the midway of subregion supplying step S10, in the same manner as ion beam line cleaning step S5,
Ion beam IB is scanned using magnetic field, or by plasma generate container 2 in generate hydrogen plasma come pair
Ion beam line forming member is cleaned.
In addition, judge that the particle adhered on substrate is mostly and is less by operator in said embodiment, but can also
It is mostly few to judge automatically the particle adhered on substrate to be by particulate diagnostic device 200 as shown in Figure 6.
Specifically, particulate diagnostic device 200 is that have leading to for CPU, memory, input/output interface, converter etc.
With or special purpose computer, by making CPU and peripheral equipment according to the established procedure in the predetermined region for being stored in the memory
Equal co-operatings, play the function as number data reception portion 21 and judging part 22, and the number data reception portion 21 receives
It indicates to be based on to the number data of the particle number or value relevant with number that are attached on substrate, the judging part 22 by number
The received number data of data reception portion 21 judge that the particle being attached on substrate be mostly is few.In addition, " relevant to number
Value " refers to the figure information of particle etc..
More specifically, the reception such as from foreign body detecting device of number data reception portion 21, which is attached to, passes through conveying circuit
L1 is transported to the irradiation position of ion beam IB and the particle on the illuminated first substrate of ion beam IB of the irradiation position
First several data and second number for being attached to the particle being transported in the second substrate of irradiation position by conveying circuit L1
Data.
Moreover, it is judged that it is mostly few that portion 22, which judges to adhere to based on first several data particle on the first substrate to be, and
And judge that the particle being attached in the second substrate be mostly is few based on second several data, and by judging result to for example showing
The output such as device.
According to the composition, when being judged as more than the particle of attachment on the first substrate by judging part 22 and be attached to the second base
When particle on plate is few, it can distinguish due to ion beam IB is irradiated to substrate and produce particle.
On the other hand, when being judged as that the particle being attached in the second substrate is more by judging part 22, can distinguish due to
The conveying of substrate and produce particle.
As a result, according to the particulate diagnostic device 200, the particle that can be diagnosed automatically in ion beam irradiation apparatus 100 is produced
Raw position.
In addition, the reception of number data reception portion 21 is attached to the third base for having carried out the district operation in the embodiment
The number data of particle on plate, judging part 22 judge that the particle being attached on each third substrate is more based on the number data
Be it is few, according to this composition, can reduce automatically to be formed conveying circuit L1 which region be particle generating unit range.
In addition, can be carried out without departing from the spirit and scope of the present invention the present invention is not limited to the embodiment
Various modifications.
Claims (8)
1. a kind of particulate diagnostic method, which is characterized in that the particulate diagnostic method is for diagnosing in ion beam irradiation apparatus
Particle generating unit,
The particulate diagnostic method includes:
Conveying and irradiating step are conveyed first substrate to the irradiation position of ion beam by defined conveying circuit, and to defeated
It is sent to the first substrate irradiation ion beam of the irradiation position；
First judgment step judges to adhere on the illuminated first substrate of ion beam in the conveying and irradiating step
Particle be mostly be few；
Supplying step, when being judged as that particle is more in first judgment step, by the conveying circuit by the second substrate
It is transported to the irradiation position；And
Second judgment step judges to be transported in the supplying step and adhere in the second substrate of the irradiation position
It is few that particle, which is mostly,.
2. particulate diagnostic method according to claim 1, which is characterized in that
The ion beam irradiation apparatus has an ion beam line forming member, the ion beam line forming member formed it is described from
The ion beam line that beamlet passes through,
The particulate diagnostic method further includes that ion beam line cleans step, when being judged as particle in second judgment step
When few, the ion beam line cleans step and cleans to the ion beam line forming member.
3. particulate diagnostic method according to claim 2, which is characterized in that
The conveying circuit is formed as throughout multiple regions,
The particulate diagnostic method further include:
Subregion supplying step, when being judged as that particle is more in second judgment step, to third substrate different from each other into
The district operation that row carries out the second substrate in each region in the conveying and irradiating step；And
Third judgment step judges the third substrate that each district operation has been carried out in the subregion supplying step
It is few that the particle of upper attachment, which is mostly,.
4. particulate diagnostic method according to claim 3, which is characterized in that the particulate diagnostic method further includes pipeline
Road cleans step, the conveying circuit clean step clean be judged as more than particle in the third judgment step described the
The corresponding region of three substrates.
5. particulate diagnostic method according to claim 3 or 4, which is characterized in that institute in the subregion supplying step
State the repeated multiple times each district operation of progress of third substrate.
6. particulate diagnostic method according to claim 3 or 4, which is characterized in that clean step in the ion beam line
In at least one described region is cleaned, or to the ion beam line forming member in the subregion supplying step
It is cleaned.
7. particulate diagnostic method according to claim 5, which is characterized in that it is right in step to clean in the ion beam line
At least one described region is cleaned, or is carried out in the subregion supplying step to the ion beam line forming member
It cleans.
8. a kind of particulate diagnostic device, which is characterized in that the particulate diagnostic device is for diagnosing in ion beam irradiation apparatus
Particle generating unit,
The particulate diagnostic device includes:
Number data reception portion, receives number data, the number data indicate the particle being attached on substrate number or with
The relevant value of number；And
Judging part judges attachment on the substrate based on the number data received by the number data reception portion
Particle that be mostly be is few,
The number data reception portion receive be attached to by defined conveying circuit be transported to ion beam irradiation position and
It first several data of the particle on the illuminated first substrate of ion beam of the irradiation position and is attached to by described
Conveying circuit is transported to second several data of the particle in the second substrate of the irradiation position,
It is few that the judging part, which is mostly based on the particle of described first several data judgement attachments on the first substrate, and
It is few that particle based on described second several data judgement attachments on the second substrate, which is mostly,.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017-170501 | 2017-09-05 | ||
| JP2017170501A JP6690616B2 (en) | 2017-09-05 | 2017-09-05 | Particle diagnosis method and particle diagnosis apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109427522A true CN109427522A (en) | 2019-03-05 |
| CN109427522B CN109427522B (en) | 2022-02-08 |
Family
ID=65514472
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810531366.XA Active CN109427522B (en) | 2017-09-05 | 2018-05-29 | Microparticle diagnosis method and microparticle diagnosis device |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP6690616B2 (en) |
| KR (1) | KR102326979B1 (en) |
| CN (1) | CN109427522B (en) |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6156464A (en) * | 1998-03-02 | 2000-12-05 | Nikon Corporation | Scanning-type charged-particle beam exposure methods including scan-velocity error detection and correction |
| JP2004356297A (en) * | 2003-05-28 | 2004-12-16 | Hitachi High-Technologies Corp | Ion implantation device and method for specifying part wherein cause of particle increase occurs |
| CN1770418A (en) * | 2004-11-02 | 2006-05-10 | 力晶半导体股份有限公司 | Defect detection method |
| JP2012094567A (en) * | 2010-10-25 | 2012-05-17 | Tokyo Electron Ltd | Anomaly cause analysis method and anomaly analysis program |
| CN102629543A (en) * | 2011-02-02 | 2012-08-08 | 日新离子机器株式会社 | Ion implantation method and ion implantation apparatus |
| CN103515172A (en) * | 2012-06-22 | 2014-01-15 | 日新离子机器株式会社 | Ion beam irradiation apparatus and operation method thereof |
| CN103839849A (en) * | 2014-02-21 | 2014-06-04 | 上海华力微电子有限公司 | Method for judging failed machine in ion implantation section |
| CN104137233A (en) * | 2012-02-27 | 2014-11-05 | 东京毅力科创株式会社 | Substrate washing method, substrate washing device, and vacuum processing device |
| CN104201129A (en) * | 2014-09-01 | 2014-12-10 | 上海华力微电子有限公司 | Method for monitoring particles in cleaning device |
| JP2016207767A (en) * | 2015-04-20 | 2016-12-08 | 東京エレクトロン株式会社 | Substrate processing system |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2956412B2 (en) | 1993-03-16 | 1999-10-04 | 日新電機株式会社 | How to clean the ion source |
| KR19980067199A (en) * | 1997-01-31 | 1998-10-15 | 김광호 | Semiconductor equipment control method using particle automatic management system |
| US7078712B2 (en) * | 2004-03-18 | 2006-07-18 | Axcelis Technologies, Inc. | In-situ monitoring on an ion implanter |
| US7566887B2 (en) * | 2007-01-03 | 2009-07-28 | Axcelis Technologies Inc. | Method of reducing particle contamination for ion implanters |
-
2017
- 2017-09-05 JP JP2017170501A patent/JP6690616B2/en active Active
-
2018
- 2018-05-29 CN CN201810531366.XA patent/CN109427522B/en active Active
- 2018-06-19 KR KR1020180070204A patent/KR102326979B1/en active IP Right Grant
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6156464A (en) * | 1998-03-02 | 2000-12-05 | Nikon Corporation | Scanning-type charged-particle beam exposure methods including scan-velocity error detection and correction |
| JP2004356297A (en) * | 2003-05-28 | 2004-12-16 | Hitachi High-Technologies Corp | Ion implantation device and method for specifying part wherein cause of particle increase occurs |
| CN1770418A (en) * | 2004-11-02 | 2006-05-10 | 力晶半导体股份有限公司 | Defect detection method |
| JP2012094567A (en) * | 2010-10-25 | 2012-05-17 | Tokyo Electron Ltd | Anomaly cause analysis method and anomaly analysis program |
| CN102629543A (en) * | 2011-02-02 | 2012-08-08 | 日新离子机器株式会社 | Ion implantation method and ion implantation apparatus |
| CN104137233A (en) * | 2012-02-27 | 2014-11-05 | 东京毅力科创株式会社 | Substrate washing method, substrate washing device, and vacuum processing device |
| CN103515172A (en) * | 2012-06-22 | 2014-01-15 | 日新离子机器株式会社 | Ion beam irradiation apparatus and operation method thereof |
| CN103839849A (en) * | 2014-02-21 | 2014-06-04 | 上海华力微电子有限公司 | Method for judging failed machine in ion implantation section |
| CN104201129A (en) * | 2014-09-01 | 2014-12-10 | 上海华力微电子有限公司 | Method for monitoring particles in cleaning device |
| JP2016207767A (en) * | 2015-04-20 | 2016-12-08 | 東京エレクトロン株式会社 | Substrate processing system |
Also Published As
| Publication number | Publication date |
|---|---|
| KR102326979B1 (en) | 2021-11-16 |
| KR20190026553A (en) | 2019-03-13 |
| CN109427522B (en) | 2022-02-08 |
| JP2019047038A (en) | 2019-03-22 |
| JP6690616B2 (en) | 2020-04-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107636450B (en) | Substrate inspection method, computer storage medium, and substrate inspection apparatus | |
| CN104854688B (en) | Substrate processing device and application method for substrate device | |
| EP2399678A2 (en) | A system for the processing of reusable gloves | |
| EP2163886A1 (en) | X-ray inspection device and production system | |
| US20150179013A1 (en) | Method and Apparatus for Processing Value Documents | |
| TWI724827B (en) | Defect observation device | |
| CN107961980A (en) | A kind of express delivery cabinet intelligent sorting system and method for sorting | |
| CN109564889A (en) | The diagnostic system of substrate conveying hand | |
| EP1061360A3 (en) | Pattern inspection method and pattern inspection apparatus | |
| WO2017151897A1 (en) | Systems and methods of auto sacking of parcels | |
| CN109427522A (en) | Particulate diagnostic method and particulate diagnostic device | |
| CN102812544A (en) | Method And Apparatus For Improved Sorting Of Diced Substrates | |
| CN115561471A (en) | Full-automatic water quality detection laboratory and automatic water sample conveying method | |
| CN107449698A (en) | Pellet on-line period detection means | |
| KR101870054B1 (en) | Method and system for handling value documents | |
| KR102000955B1 (en) | X-Ray Apparatus for Inspecting a Plural of Objects Simultaneously and Method for the Same | |
| CN110304394A (en) | A kind of intelligent logistics system | |
| CN110534405A (en) | Handle the work station and method of workpiece | |
| JP5156883B2 (en) | Diagnostic method for container inspection system | |
| CN110146713B (en) | Automatic test system and method | |
| JP2009145153A (en) | Electronic component testing apparatus and electronic component testing method | |
| CN114747050A (en) | Plant and process for treating used or ex-service accumulators | |
| CN208818531U (en) | A kind of novel pipe powder ash automatic sampler | |
| JP2007187549A (en) | Visual inspection system for semiconductor, visual inspection method and semiconductor manufacturing apparatus | |
| CN112179906A (en) | Appearance inspection device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |