CN112439747A - Cleaning method for ion beam irradiation apparatus - Google Patents
Cleaning method for ion beam irradiation apparatus Download PDFInfo
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- CN112439747A CN112439747A CN202010342663.7A CN202010342663A CN112439747A CN 112439747 A CN112439747 A CN 112439747A CN 202010342663 A CN202010342663 A CN 202010342663A CN 112439747 A CN112439747 A CN 112439747A
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- Prior art keywords
- ion beam
- gas
- cleaning
- irradiated
- beam irradiation
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- 238000010884 ion-beam technique Methods 0.000 title claims abstract description 98
- 238000004140 cleaning Methods 0.000 title claims abstract description 55
- 238000000034 method Methods 0.000 title claims abstract description 31
- 239000007789 gas Substances 0.000 claims abstract description 97
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052736 halogen Inorganic materials 0.000 claims abstract description 20
- 150000002367 halogens Chemical class 0.000 claims abstract description 19
- 239000001257 hydrogen Substances 0.000 claims abstract description 19
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 19
- 230000001678 irradiating effect Effects 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims description 19
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 15
- 229910052799 carbon Inorganic materials 0.000 claims description 15
- 239000001301 oxygen Substances 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 239000002245 particle Substances 0.000 abstract description 24
- 230000000087 stabilizing effect Effects 0.000 abstract description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- 238000000605 extraction Methods 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 4
- 238000011109 contamination Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 150000004820 halides Chemical class 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminum fluoride Inorganic materials F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 206010066901 Treatment failure Diseases 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/04—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by a combination of operations
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
Abstract
The invention provides a cleaning method of an ion beam irradiation device, which is an effective and efficient cleaning method capable of reducing and stabilizing particles in a beam line in advance. The cleaning method is a cleaning method in an ion beam irradiation apparatus for performing ion beam irradiation treatment on an object to be treated by using a halogen-containing gas, and after irradiating the object with an ion beam derived from a hydrogen-containing gas, the object to be irradiated is irradiated with an ion beam derived from a rare gas.
Description
Technical Field
The present invention relates to a method for cleaning a beam line of an ion beam irradiation apparatus.
Background
In the ion beam irradiation apparatus, deposits are generated on members such as an electrode, a vacuum chamber, and a slit, which constitute a beam line, with the passage of time. Physical sputtering using an ion beam is performed when removing the deposit.
Specifically, for example, in patent document 1, by adjusting the voltage applied to a pair of deflection electrodes and irradiating an analysis slit with an ion beam based on argon gas, deposits on the analysis slit are removed in a wide range.
Documents of the prior art
Patent document 1: japanese laid-open patent publication 2016-48665
Various types of gases are used for cleaning, and as shown in patent document 1, cleaning with argon gas is not necessarily sufficient. Further, in a state where the amount of particles (e.g., dust scattered in the beam) in the beam generated by the cleaning is large, if the ion beam irradiation treatment is performed on the object to be treated, a treatment failure occurs, and thus there is a problem that the ion beam irradiation treatment cannot be performed immediately.
Disclosure of Invention
The invention provides an effective and efficient cleaning method capable of reducing and stabilizing particles in a beam line in advance.
The cleaning method of the present invention is a cleaning method in an ion beam irradiation apparatus for performing an ion beam irradiation treatment on an object to be treated with a halogen-containing gas, wherein after the object to be irradiated is irradiated with an ion beam derived from the hydrogen-containing gas, the object to be irradiated is irradiated with an ion beam derived from a rare gas.
According to the above method, the deposits derived from the halogen element can be removed with the hydrogen component, and the remaining deposits can be removed by beam sputtering of a rare gas. Further, since the cleaning with the hydrogen-containing gas is performed in advance so that the time required for reducing and stabilizing the particles in the beam line is relatively long, the ion beam irradiation apparatus can be operated at an early stage to perform the ion beam irradiation treatment.
As a countermeasure against metal contamination of an object to be processed, a portion on a beam line irradiated with an ion beam is shielded by a member containing carbon.
When cleaning is performed using an ion beam, the carbon-containing member is sputtered, and carbon components are suspended in the beam line, which may become a factor of particles that delays the start of the ion beam irradiation process.
In the case of removing the above-mentioned carbon-derived particles, the following structure is preferably employed.
The irradiation target is irradiated with an ion beam derived from the rare gas using a member containing carbon, and further irradiated with an ion beam derived from a halogen-containing gas or an oxygen-containing gas.
According to the above method, since the carbon-derived particles are gasified by reacting with the radicals of the halogen element and oxygen, they are easily removed from the beam.
In order to achieve downsizing of the apparatus and avoid complication of gas management, it is preferable to use at least 1 of the gases used for cleaning as a gas used for the ion beam irradiation treatment.
In order to reduce particles suspended in the beam line after cleaning and to stabilize them at an early stage, it is preferable that the sample substrate is transported to an ion beam irradiation position at the time of substrate processing after the irradiation object is irradiated with ions derived from the rare gas. Further, it is preferable that after the irradiation object is irradiated with the ion beam derived from the halogen-containing gas or the oxygen-containing gas, the sample substrate is transported to an ion beam irradiation position at the time of substrate processing.
Since particles adhere to the sample substrate when the sample substrate is transported to the ion beam irradiation position at the time of substrate processing, the particles in the beam line can be reduced and stabilized in advance by recovering the particles.
In order to shorten the cleaning time, the following configuration may be used. At least one of the hydrogen-containing gas and the rare gas is a mixed gas composed of a plurality of gases having different masses, and the irradiation object is irradiated with the scanned ion beam.
The halogen-derived deposits can be removed with the hydrogen component, and the remaining deposits can be removed by beam sputtering of a rare gas. Further, since the cleaning with the hydrogen-containing gas is performed in advance so that the time required for reducing and stabilizing the particles in the beam line is relatively long, the ion beam irradiation apparatus can be operated at an early stage to perform the ion beam irradiation treatment.
Drawings
Fig. 1 is a plan view of an example of the configuration of an ion beam irradiation apparatus.
Fig. 2 is a plan view of a configuration example of scanning of an ion beam.
FIG. 3 is a flow chart of one embodiment of purging.
Fig. 4 is a flow chart of another embodiment of the cleaning.
Fig. 5 is a flow chart of other embodiments of purging.
Description of the reference numerals
IM ion beam irradiation apparatus
IB ion beam
1 plasma generating chamber
2 leading-out electrode system
3 vacuum container
4 quality analysis electromagnet
5 analysis slit
6 treatment chamber
7 object to be treated
P process gas
C1 hydrogen-containing cleaning gas
C2 rare gas
Detailed Description
Fig. 1 is a schematic plan view showing the entire ion beam irradiation apparatus IM. The ion beam irradiation apparatus IM shown in the drawing is assumed to be a known ion implantation apparatus. Hereinafter, the structure of the apparatus will be briefly described.
The ion beam IB is extracted from the plasma generated in the plasma generation chamber 1 by an extraction electrode system 2 composed of a plurality of electrodes. The extracted ion beam IB contains various ion species. The ion beam IB is transported into the processing chamber 6 by mass analysis of the desired ion species by the mass analyzing electromagnet 4 and the analyzing slit 5.
In the processing chamber 6, an object to be processed 7 (e.g., a silicon wafer or a glass substrate) is mechanically reciprocated in the direction of the arrow shown in the figure. The ion beam IB transported into the processing chamber 6 has a size in the front-back direction of the paper surface larger than that of the object to be processed 7 in the same direction, and the entire surface of the object to be processed 7 is irradiated with the ion beam by reciprocally scanning the object to be processed 7 in the direction of the arrow shown in the figure (vertical direction in the figure).
The beam line (beam line) of the ion beam IB is covered with the vacuum chamber 3, and is kept in vacuum during processing of the object to be processed 7.
When the ion beam irradiation treatment is performed on the object to be treated, the ion beam is supplied to the plasma chamber 1Halogen gases (e.g. BF)3Gasified AlI3And AlF3Etc.) i.e. the process gas P. During cleaning in the beam line, the hydrogen-containing gas C1 and the rare gas C2 are selectively supplied to the plasma chamber 1.
The cleaning of the present invention is performed by irradiating a member or a portion (irradiation object) to be cleaned with an ion beam. When the target member is large and extensive cleaning is necessary, beam scanning as shown in fig. 2 may be used.
When a halogen-containing process gas is used, the halogen component reacts with a member disposed in the beam line to produce a halide. The halide is deposited on the member with the lapse of time, and causes insulation of the member and abnormal discharge between the members.
In order to remove the ions, beam sputtering with an ion beam is performed without breaking the vacuum in the vacuum chamber 3.
In fig. 2 (a), the ion beam IB is scanned by changing the intensity of the magnetic field B generated toward the back side of the paper surface of the mass analyzing electromagnet 4 with time. By this scanning, the trajectory of the ion beam is changed as indicated by the arrow, and the ion beam IB can be irradiated over a wide range.
In the example of fig. 2 (a), a carbon liner S is disposed along the container wall surface to prevent consumption of the vacuum container 3.
In fig. 2 (B), the central electrode constituting the extraction electrode system 2 is composed of a pair of upper and lower electrodes, and each electrode is connected to a high-frequency power supply. Since the waveforms of the high-frequency voltages output from the power supplies are different in phase by 180 degrees, the ion beam IB can be widely irradiated to the wall surface of the vacuum chamber by widely scanning the ion beam IB in the vertical direction in the figure.
In order to avoid metal contamination, the extraction electrode system 2 may be configured with a carbon electrode.
The above-described configuration shows a configuration in which the ion beam IB is scanned using the mass analyzing electromagnet 4 and the extraction electrode system 2, but depending on the configuration of the ion beam irradiation apparatus, the ion beam may be scanned using other optical elements.
The present invention is not limited to scanning of the ion beam over time, and may be configured to deflect the ion beam by a predetermined angle so that the ion beam irradiates a predetermined portion.
As a result of intensive studies by the inventors in cleaning with the ion beam as described above, it was found that the time required for the particles in the beam line to be reduced and stabilized differs depending on the kind of gas used.
According to the test of the inventors, when the case of using hydrogen gas and the case of using argon gas are compared, it is found that the time is about 2 times, and when cleaning is performed using hydrogen gas, the time required for particles to decrease and to stabilize is prolonged.
In view of this, the present invention cleans the wire harness in accordance with the steps shown in fig. 3. In particular, using a hydrogen-containing gas (e.g. hydrogen, pH) at the beginning of the cleaning3Or a mixed gas thereof) is irradiated with an ion beam to a member (a member such as an electrode constituting an extraction electrode system, a wall surface of a vacuum chamber, and a spacer in a mass analysis electromagnet) as an irradiation target of the present invention arranged in a beam line (S1). Next, the cleaning gas is switched to a rare gas such as argon or xenon or a mixed gas thereof, and the same member and portion are irradiated with an ion beam (S2).
In the present invention, the ion beam generated from the hydrogen-containing gas to generate plasma and extracted from the plasma is referred to as an ion beam derived from the hydrogen-containing gas, and the same reference numerals are used for other gas species described later.
By performing the cleaning in this way, the halogen-derived deposits can be removed as hydrogen components, and the remaining deposits can be removed by beam sputtering using a rare gas, and therefore effective cleaning is achieved as compared with the case of using only argon gas.
Further, since the cleaning with the hydrogen-containing gas is performed in advance in such a manner that the time required for reducing the particles in the beam line and stabilizing the particles is relatively long, the ion beam irradiation processing can be performed by operating the ion beam irradiation apparatus earlier than the case where the cleaning procedure is reversed.
As a countermeasure against metal contamination of an object to be processed, a portion on a beam line irradiated with an ion beam is shielded by a member containing carbon.
Further, the electrodes constituting the extraction electrode system 2 may be made of carbon.
When cleaning is performed using an ion beam, these carbon-containing members are sputtered, and carbon components float in the beam line, which may become a main factor of particles that delay the start of the ion beam irradiation process.
Therefore, as shown in the flowchart of fig. 4, after beam cleaning using a rare gas is performed, the cleaning gas is switched to a halogen-containing gas or an oxygen-containing gas, and beam cleaning using these gases is performed (S3).
By performing such beam cleaning, the halogen radicals and oxygen radicals contained in the ion beam react with the carbon-derived particles to gasify the particles, so that the carbon-derived particles are easily removed from the beam line.
Note that, with reference to the flowcharts of fig. 4 and fig. 5 described later, the processing using the same reference numerals as in fig. 3 is the same as that described in the flowchart of fig. 3, and a redundant description thereof is omitted here.
Further, in order to reduce and stabilize particles suspended in the beam line after cleaning, as shown in the flowchart of fig. 5, after cleaning with an ion beam, the sample substrate may be transported to an ion beam irradiation position at the time of substrate processing (S4).
Since particles adhere to the sample substrate when the sample substrate is transported to the ion beam irradiation position at the time of substrate processing, the particles in the beam line can be reduced and stabilized in advance by recovering the particles.
The sample substrate referred to herein means a substrate on which ion beam irradiation treatment is not performed.
The flowcharts of fig. 3 to 5 described above relate to the configuration using a gas other than the hydrogen-containing gas and the rare gas, and in this case, the number of gas supply sources to be supplied to the plasma generation chamber 1 may be increased in the configuration example of the apparatus shown in fig. 1.
However, if the number of gas supply sources is increased, there is a risk that the apparatus size becomes large and gas management becomes complicated.
Therefore, in view of this, it is preferable to use both the halogen-containing gas and the oxygen-containing gas as the process gas rather than a special gas as the cleaning gas.
In the ion beam irradiation treatment, when an assist gas for assisting the plasma generation and a gas for suppressing discharge are used in addition to the process gas, these gases can be used as a cleaning gas.
The configuration of the ion beam irradiation apparatus described in the above embodiment is merely an example, and components not disclosed in fig. 1 may be added to the beam line. For example, various components such as a beam optical element for adjusting the beam current density distribution, an acceleration/deceleration tube for adjusting the energy of the ion beam, and an energy filter for removing unnecessary energy components may be added.
The ion beam irradiation apparatus contemplated by the present invention is not limited to the ion implantation apparatus, and may be a surface modification apparatus using an ion beam.
The cleaning method described in the above embodiment may be performed by switching the gas type by an operator of the apparatus, or may be performed automatically.
In the case of automation, a program for performing cleaning is loaded on a control device that controls beam irradiation, gas switching, and the like of the ion beam irradiation device.
In addition, the series of washing shown in the flowcharts of fig. 3 to 5 may be repeated a plurality of times.
Further, when a series of cleaning is performed a plurality of times, the amount of gas for cleaning gas and the cleaning time can be changed each time.
Although the above embodiment describes the use of a halogen-containing gas as the process gas, the ion beam irradiation apparatus is not assumed to be a dedicated apparatus for performing a process using only a halogen-containing gas.
That is, the ion beam irradiation apparatus for performing the ion beam irradiation treatment on the object to be treated by using the halogen-containing gas in the present invention is also assumed to be an ion beam irradiation apparatus having a process gas in addition to the halogen-containing gas, and to use various gases for a plurality of processes.
In the above embodiment, the hydrogen-containing gas and the rare gas are mixed as a plurality of gases having different masses, and the scanning amount differs depending on the mass in combination with the scanning of the ion beam, so that the range of the ion beam irradiation is expanded, and the cleaning time can be shortened.
In addition, various improvements and modifications other than those described above can be made without departing from the scope of the inventive concept of the present invention.
Claims (6)
1. A cleaning method in an ion beam irradiation apparatus for performing an ion beam irradiation treatment on an object to be treated with a halogen-containing gas, the cleaning method being characterized in that,
after irradiating the irradiated object with an ion beam derived from a hydrogen-containing gas,
irradiating the irradiated object with an ion beam derived from a rare gas.
2. The cleaning method according to claim 1,
the irradiated object uses a member containing carbon,
after the irradiation of the irradiated object with the ion beam derived from the rare gas,
further, the irradiated object is irradiated with an ion beam derived from a halogen-containing gas or an oxygen-containing gas.
3. The cleaning method according to claim 1 or 2, wherein at least 1 of the gases used for cleaning is also used as a gas used for the ion beam irradiation treatment.
4. The cleaning method according to claim 1, wherein after the irradiation object is irradiated with the ion beam derived from the rare gas, the sample substrate is transported to an ion beam irradiation position at the time of substrate processing.
5. The cleaning method according to claim 2, wherein after the irradiation object is irradiated with the ion beam derived from the halogen-containing gas or the oxygen-containing gas, the sample substrate is transported to an ion beam irradiation position at the time of substrate processing.
6. The cleaning method according to claim 1 or 2, wherein at least one of the hydrogen-containing gas and the rare gas is a mixed gas composed of a plurality of gases having different masses, and the irradiation target is irradiated with the scanned ion beam.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019161740A JP7385809B2 (en) | 2019-09-05 | 2019-09-05 | How to clean ion beam irradiation equipment |
| JP2019-161740 | 2019-09-05 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112439747A true CN112439747A (en) | 2021-03-05 |
| CN112439747B CN112439747B (en) | 2024-03-08 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202010342663.7A Active CN112439747B (en) | 2019-09-05 | 2020-04-27 | Method for cleaning ion beam irradiation device |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP7385809B2 (en) |
| KR (1) | KR102478688B1 (en) |
| CN (1) | CN112439747B (en) |
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-
2019
- 2019-09-05 JP JP2019161740A patent/JP7385809B2/en active Active
-
2020
- 2020-04-14 KR KR1020200044990A patent/KR102478688B1/en active IP Right Grant
- 2020-04-27 CN CN202010342663.7A patent/CN112439747B/en active Active
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Also Published As
| Publication number | Publication date |
|---|---|
| KR102478688B1 (en) | 2022-12-16 |
| JP2021040081A (en) | 2021-03-11 |
| CN112439747B (en) | 2024-03-08 |
| JP7385809B2 (en) | 2023-11-24 |
| KR20210029072A (en) | 2021-03-15 |
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