CN112439747B - Method for cleaning ion beam irradiation device - Google Patents
Method for cleaning ion beam irradiation device Download PDFInfo
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- CN112439747B CN112439747B CN202010342663.7A CN202010342663A CN112439747B CN 112439747 B CN112439747 B CN 112439747B CN 202010342663 A CN202010342663 A CN 202010342663A CN 112439747 B CN112439747 B CN 112439747B
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- China
- Prior art keywords
- ion beam
- gas
- containing gas
- cleaning
- irradiation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000010884 ion-beam technique Methods 0.000 title claims abstract description 104
- 238000004140 cleaning Methods 0.000 title claims abstract description 56
- 238000000034 method Methods 0.000 title claims abstract description 31
- 239000007789 gas Substances 0.000 claims abstract description 105
- 239000002245 particle Substances 0.000 claims abstract description 24
- 229910052736 halogen Inorganic materials 0.000 claims abstract description 23
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 22
- 150000002367 halogens Chemical class 0.000 claims abstract description 22
- 239000001257 hydrogen Substances 0.000 claims abstract description 21
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims description 19
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 14
- 229910052799 carbon Inorganic materials 0.000 claims description 14
- 239000001301 oxygen Substances 0.000 claims description 10
- 229910052760 oxygen Inorganic materials 0.000 claims description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 230000000087 stabilizing effect Effects 0.000 abstract description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 238000000605 extraction Methods 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 238000011109 contamination Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 150000004820 halides Chemical class 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 229910016569 AlF 3 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/04—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by a combination of operations
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention provides a cleaning method of an ion beam irradiation device, which is an effective and high-efficiency cleaning method capable of reducing and stabilizing particles in a beam line in advance. The cleaning method is a cleaning method in an ion beam irradiation apparatus for performing ion beam irradiation treatment on an object to be treated by using a halogen-containing gas, and irradiates the object with an ion beam derived from a hydrogen-containing gas and then irradiates the object with an ion beam derived from a rare gas.
Description
Technical Field
The present invention relates to a method for cleaning a beam line of an ion beam irradiation apparatus.
Background
In the ion beam irradiation apparatus, deposits are generated on the electrodes, vacuum vessels, slits, and other members constituting the beam line over time. Physical sputtering using an ion beam is performed when removing the deposit.
Specifically, for example, in patent document 1, by adjusting the voltages applied to a pair of deflection electrodes and irradiating an analysis slit with an ion beam based on argon gas, deposits on the analysis slit are removed over a wide range.
Prior art literature
Patent document 1: japanese patent laid-open No. 2016-48665
The types of gases used in the cleaning are various, and as shown in patent document 1, the cleaning with argon gas is not necessarily sufficient. In addition, in a state where the amount of particles (dust scattered in the beam due to the deposition) in the beam generated by the cleaning is large, if the ion beam irradiation treatment is performed on the object to be treated, a problem arises in that the ion beam irradiation treatment cannot be performed immediately.
Disclosure of Invention
The present invention provides an effective and efficient cleaning method capable of reducing and stabilizing particles in a wire harness in advance.
The cleaning method of the present invention is a cleaning method in an ion beam irradiation apparatus for performing ion beam irradiation treatment of an object to be treated with a halogen-containing gas, wherein the object to be irradiated is irradiated with an ion beam derived from a hydrogen-containing gas, and then the object to be irradiated is irradiated with an ion beam derived from a rare gas.
According to the above method, the deposit derived from the halogen element can be removed by the hydrogen component, and the remaining deposit can be removed by the beam sputtering of the rare gas. Further, since the cleaning with the hydrogen-containing gas, which takes a relatively long time to reduce particles in the beam line and stabilize, is performed first, the ion beam irradiation apparatus can be operated in advance and the ion beam irradiation treatment can be performed.
As a countermeasure against metal contamination of the object to be treated, a portion on the beam line irradiated with the ion beam is shielded by a member containing carbon.
When cleaning is performed by an ion beam, the carbonaceous member is sputtered, and the carbon component is suspended in the beam line, which may be a main factor of particles that delay the start of the ion beam irradiation treatment.
In removing the carbon-derived particles, the following structure is preferably employed.
The irradiation target uses a member containing carbon, and after the irradiation target is irradiated with an ion beam derived from the rare gas, the irradiation target is further irradiated with an ion beam derived from a halogen-containing gas or an oxygen-containing gas.
According to the above method, since the carbon-derived particles react with the halogen element and oxygen radicals and are gasified, they are easily removed from the wire harness.
In order to achieve downsizing of the apparatus and to avoid complication of gas management, at least 1 of the gases used in cleaning is preferably used as the gas used in the ion beam irradiation treatment.
In order to reduce and stabilize particles suspended in the beam line in advance after cleaning, it is preferable that the sample substrate is transported to an ion beam irradiation position at the time of substrate processing after the irradiation of the ion beam from the rare gas to the irradiation target. Further, it is preferable that the sample substrate is transported to an ion beam irradiation position at the time of substrate processing after the irradiation of the irradiation target with the ion beam derived from the halogen-containing gas or the oxygen-containing gas.
Since particles adhere to the sample substrate by transporting the sample substrate to the ion beam irradiation position at the time of substrate processing, the particles in the beam line can be reduced and stabilized in advance by recovering the particles.
In order to shorten the cleaning time, the following configuration may be used. At least one of the hydrogen-containing gas and the rare gas is a mixed gas composed of a plurality of gases having different masses, and the object to be irradiated is irradiated with a scanned ion beam.
The deposit derived from the halogen element can be removed by hydrogen component, and the remaining deposit can be removed by beam sputtering of rare gas. Further, since the cleaning with the hydrogen-containing gas is performed in advance for a relatively long time required to reduce and stabilize particles in the beam line, the ion beam irradiation apparatus can be operated in advance and the ion beam irradiation treatment can be performed.
Drawings
Fig. 1 is a plan view of an exemplary configuration of an ion beam irradiation apparatus.
Fig. 2 is a plan view of an exemplary configuration of scanning of an ion beam.
FIG. 3 is a flow chart of one embodiment of a purge.
Fig. 4 is a flow chart of another embodiment of cleaning.
Fig. 5 is a flow chart of other embodiments of cleaning.
Description of the reference numerals
IM ion beam irradiation device
IB ion beam
1. Plasma generating chamber
2. Extraction electrode system
3. Vacuum container
4. Mass analysis electromagnet
5. Analytical slit
6. Treatment chamber
7. Object to be treated
P process gas
C1 Hydrogen-containing purge gas
C2 Rare gas
Detailed Description
Fig. 1 is a schematic plan view showing the whole of the ion beam irradiation apparatus IM. The ion beam irradiation apparatus IM shown in the figure is assumed to be a known ion implantation apparatus. Hereinafter, the structure of the device will be briefly described.
The ion beam IB is extracted from the plasma generated in the plasma generating chamber 1 by an extraction electrode system 2 composed of a plurality of electrodes. The extracted ion beam IB contains various ion species. The ion beam IB is fed into the processing chamber 6 by mass analysis of the desired ion species by the mass analysis electromagnet 4 and the analysis slit 5.
In the processing chamber 6, the object 7 to be processed (for example, a silicon wafer and a glass substrate) is mechanically transported back and forth in the direction of the arrow shown in the figure. The ion beam IB is supplied into the processing chamber 6 so that the dimension in the front-back direction of the paper surface is larger than the dimension of the object 7 in the same direction, and the entire surface of the object 7 is irradiated with the ion beam by scanning the object 7 back and forth in the direction of the arrow shown in the figure (up-down direction in the figure).
The beam line of the ion beam IB is covered with a vacuum vessel 3, and a vacuum is maintained in the vessel during processing of the object 7.
When ion beam irradiation treatment is performed on the object to be treated, a halogen-containing gas (for example, BF 3 Gasified AlI 3 And AlF 3 Etc.), i.e. process gas P. At the time of cleaning in the beam line, a hydrogen-containing gas C1 and a rare gas C2 are selectively supplied to the plasma chamber 1.
The cleaning of the present invention is performed by irradiating a member or a portion (an object to be cleaned) with an ion beam. When the target member is large and a wide cleaning is required, beam scanning as shown in fig. 2 may be used.
When a halogen-containing process gas is used, the halogen component reacts with a member disposed in the beam line to generate a halide. The halide deposits on the members with the lapse of time, and causes insulation of the members and abnormal discharge between the members.
In order to remove this, beam sputtering of the ion beam is performed without breaking the vacuum in the vacuum chamber 3.
In fig. 2 (a), the ion beam IB is scanned by changing the intensity of the magnetic field B generated by the mass analyzing electromagnet 4 toward the back side of the paper surface with time. By this scanning, the trajectory of the ion beam is changed as indicated by an arrow, and the ion beam IB can be irradiated over a wide range.
In the example of fig. 2 (a), a carbon liner S is disposed along the wall surface of the container in order to prevent the vacuum container 3 from being consumed.
In fig. 2 (B), the electrode constituting the center of the extraction electrode system 2 is composed of a set of upper and lower electrodes, and each electrode is connected to a high-frequency power supply. Since the waveforms of the high-frequency voltages outputted from the respective power supplies are 180 degrees out of phase, the ion beam IB can be irradiated to a wide range on the wall surface of the vacuum vessel by scanning the ion beam IB largely in the up-down direction in the figure.
In addition, in order to avoid metal contamination, the extraction electrode system 2 may be constituted by an electrode made of carbon.
The above-described configuration shows a configuration in which the ion beam IB is scanned by using the mass analyzing electromagnet 4 and the extraction electrode system 2, but the ion beam may be scanned by using other optical elements according to the configuration of the ion beam irradiation apparatus.
The present invention is not limited to scanning of the ion beam over time, and may be configured to deflect the ion beam by a predetermined angle so that the ion beam irradiates a predetermined portion.
In the cleaning using the ion beam described above, the inventors have found that the time required for reducing and stabilizing particles in the beam line varies depending on the kind of gas used.
According to the experiments of the inventors, it was found that the time period was about 2 times when the hydrogen gas was used and the time period required for stabilization was prolonged when the particles were reduced by cleaning with hydrogen gas.
In view of this, the present invention cleans the wire harness according to the steps shown in fig. 3. In particular, hydrogen-containing gas (e.g., hydrogen, pH, etc.) is used in the initial cleaning 3 Etc. or a mixture of these) pairsThe ion beam is irradiated by a member (such as an electrode constituting the extraction electrode system, a vacuum container wall surface, and a gasket in a mass analysis electromagnet) as an irradiated object disposed in the beam line (S1). Then, the cleaning gas is switched to a rare gas such as argon or xenon or a mixed gas of these gases, and the same member and the portion are irradiated with an ion beam (S2).
In the present invention, an ion beam that generates a plasma from the above-described hydrogen-containing gas and is extracted from the plasma is referred to as an ion beam derived from the hydrogen-containing gas, and the same applies to other gas species described below.
By performing the cleaning in this way, the deposit derived from halogen can be removed as a hydrogen component, and the remaining deposit can be removed by beam sputtering using a rare gas, so that effective cleaning is achieved as compared with the case of using only argon gas.
Further, since the cleaning with the hydrogen-containing gas is performed for a relatively long time required to reduce and stabilize the particles in the beam line, the ion beam irradiation apparatus can be operated in advance and the ion beam irradiation treatment can be performed, as compared with the case where the order of cleaning is reversed.
As a countermeasure against metal contamination of the object to be treated, a portion on the beam line irradiated with the ion beam is shielded by a member containing carbon.
In addition, the electrodes constituting the extraction electrode system 2 are sometimes made of carbon.
When cleaning is performed by an ion beam, these carbon-containing members are sputtered, and carbon components are suspended in the beam line, and there is a risk that they become a main factor of particles that delay the start of the ion beam irradiation treatment.
Therefore, as shown in the flowchart of fig. 4, after the beam cleaning using the rare gas is performed, the cleaning gas is switched to the halogen-containing gas or the oxygen-containing gas, and the beam cleaning using these gases is performed (S3).
By performing such beam cleaning, the halogen radicals and oxygen radicals contained in the ion beam react with the carbon-derived particles to gasify the particles, so that the carbon-derived particles are easily removed from the beam line.
In addition, the flowcharts of fig. 4 and fig. 5 described later are the same as those of fig. 3, and the same reference numerals are used for the processes described in the flowcharts of fig. 3, and the duplicate description is omitted here.
In order to reduce and stabilize particles suspended in the beam line in advance after cleaning, the sample substrate may be transported to an ion beam irradiation position at the time of substrate processing after cleaning by an ion beam as shown in the flowchart of fig. 5 (S4).
Since particles adhere to the sample substrate by transporting the sample substrate to the ion beam irradiation position at the time of substrate processing, the particles in the beam line can be reduced and stabilized in advance by recovering the particles.
The sample substrate referred to herein refers to a substrate that has not been subjected to ion beam irradiation treatment.
The flowcharts of fig. 3 to 5 described above relate to a configuration using a hydrogen-containing gas and a gas other than a rare gas, and in this case, the number of gas supply sources to be supplied to the plasma generation chamber 1 may be increased in the configuration example of the apparatus shown in fig. 1.
However, if the number of gas supply sources is increased, there is a risk that the device size is increased and gas management is complicated.
Therefore, in view of this, it is preferable to use a halogen-containing gas and an oxygen-containing gas as both the process gas and the cleaning gas, as compared with the case of providing a special gas as the cleaning gas.
In the ion beam irradiation treatment, when an assist gas for assisting plasma generation and a gas for suppressing discharge are used in addition to the process gas, these gases may be used together with the cleaning gas.
The configuration of the ion beam irradiation apparatus described in the above embodiment is merely an example, and components not disclosed in fig. 1 may be added to the beam line. For example, various components such as a beam optical element for adjusting the beam current density distribution, an acceleration/deceleration tube for adjusting the energy of the ion beam, and an energy filter for removing unnecessary energy components may be added.
The ion beam irradiation apparatus according to the present invention is not limited to the ion implantation apparatus, and may be a surface modification apparatus using an ion beam.
The method of cleaning described in the above embodiment may be performed by switching the gas type by an operator of the apparatus by an appropriate hand, or may be performed in an automated manner.
In the case of automation, a program for performing cleaning is loaded on a control device that controls beam irradiation, gas switching, and the like of an ion beam irradiation device.
In addition, the series of cleaning shown in the flowcharts of fig. 3 to 5 may be repeated a plurality of times.
Further, when a series of cleaning is performed a plurality of times, the gas amount of the cleaning gas and the cleaning time may be changed each time.
In the above embodiments, the use of a halogen-containing gas as the process gas was described, but the ion beam irradiation apparatus is not assumed to be a dedicated apparatus for performing a process using only a halogen-containing gas.
That is, the ion beam irradiation apparatus for performing ion beam irradiation treatment of an object to be treated using a halogen-containing gas according to the present invention is also assumed to be an ion beam irradiation apparatus having a process gas in addition to a halogen-containing gas, and employing various gases for a plurality of processes.
In the above embodiment, the hydrogen-containing gas and the rare gas are mixed as a plurality of gases having different masses, and the scanning amount is different in combination with the scanning of the ion beam, and therefore the irradiation range of the ion beam is widened due to the difference in mass, and the cleaning time can be shortened.
Further, various modifications and alterations other than the above are possible without departing from the scope of the inventive concept of the present invention.
Claims (6)
1. A cleaning method in an ion beam irradiation apparatus for performing ion beam irradiation treatment on an object to be treated by using a halogen-containing gas, the cleaning method characterized by comprising the steps of,
after an ion beam from a hydrogen-containing gas is irradiated onto an object to be irradiated on a beam line,
by irradiating the irradiation object with an ion beam derived from a rare gas, particles in the beam line are reduced, the time to stabilize is shortened,
the ion beam from the hydrogen-containing gas is an ion beam that generates plasma from the hydrogen-containing gas and is extracted from the plasma,
the ion beam from the rare gas is an ion beam that generates plasma from the rare gas and is extracted from the plasma.
2. The method of claim 1, wherein the cleaning process is performed,
the irradiated object uses a member containing carbon,
after the irradiation of the irradiation target with the ion beam derived from the rare gas,
further irradiating the irradiated object with an ion beam derived from a halogen-containing gas or an oxygen-containing gas,
the ion beam derived from the halogen-containing gas or the oxygen-containing gas is an ion beam that generates plasma from the halogen-containing gas or the oxygen-containing gas and is extracted from the plasma.
3. The method according to claim 1 or 2, wherein at least 1 of the gases used in the cleaning is used as the gas used in the ion beam irradiation treatment.
4. The cleaning method according to claim 1, wherein the sample substrate is transported to an ion beam irradiation position at the time of substrate processing after the irradiation of the irradiation target with the ion beam derived from the rare gas.
5. The cleaning method according to claim 2, wherein the sample substrate is transported to an ion beam irradiation position at the time of substrate processing after the irradiation of the irradiation target with the halogen-containing gas or the ion beam derived from the oxygen-containing gas.
6. The cleaning method according to claim 1 or 2, wherein at least one of the hydrogen-containing gas and the rare gas is a mixed gas composed of a plurality of gases having different masses, and the object to be irradiated is irradiated with the scanned ion beam.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019-161740 | 2019-09-05 | ||
| JP2019161740A JP7385809B2 (en) | 2019-09-05 | 2019-09-05 | How to clean ion beam irradiation equipment |
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| Publication Number | Publication Date |
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| CN112439747A CN112439747A (en) | 2021-03-05 |
| CN112439747B true CN112439747B (en) | 2024-03-08 |
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| CN202010342663.7A Active CN112439747B (en) | 2019-09-05 | 2020-04-27 | Method for cleaning ion beam irradiation device |
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| Country | Link |
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| JP (1) | JP7385809B2 (en) |
| KR (1) | KR102478688B1 (en) |
| CN (1) | CN112439747B (en) |
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| JPH0855838A (en) * | 1994-08-12 | 1996-02-27 | Sony Corp | Cleaning method of fine machining apparatus |
| JP4182535B2 (en) | 1999-05-27 | 2008-11-19 | 株式会社Ｉｈｉ | Self-cleaning ion doping apparatus and method |
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| JP2016048665A (en) | 2014-08-28 | 2016-04-07 | 日新イオン機器株式会社 | Ion irradiation device, and method for cleaning ion irradiation device |
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| JP6726264B2 (en) | 2018-12-17 | 2020-07-22 | エーファウ・グループ・エー・タルナー・ゲーエムベーハー | Method and apparatus for surface treating a substrate |
-
2019
- 2019-09-05 JP JP2019161740A patent/JP7385809B2/en active Active
-
2020
- 2020-04-14 KR KR1020200044990A patent/KR102478688B1/en active IP Right Grant
- 2020-04-27 CN CN202010342663.7A patent/CN112439747B/en active Active
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| JPS5534438A (en) * | 1978-08-31 | 1980-03-11 | Fujitsu Ltd | Ion injection method |
| JPH0765780A (en) * | 1993-08-31 | 1995-03-10 | Nec Kansai Ltd | Ion implanting device |
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| JP2008091836A (en) * | 2006-10-05 | 2008-04-17 | Hitachi Kokusai Electric Inc | Substrate processing equipment |
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| CN103515172A (en) * | 2012-06-22 | 2014-01-15 | 日新离子机器株式会社 | Ion beam irradiation apparatus and operation method thereof |
| JP2014026955A (en) * | 2012-06-22 | 2014-02-06 | Nissin Ion Equipment Co Ltd | Ion beam irradiation device and operation method of ion beam irradiation device |
| JP2014110142A (en) * | 2012-11-30 | 2014-06-12 | Nissin Ion Equipment Co Ltd | Device and method for irradiating ion beam |
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Also Published As
| Publication number | Publication date |
|---|---|
| JP2021040081A (en) | 2021-03-11 |
| CN112439747A (en) | 2021-03-05 |
| JP7385809B2 (en) | 2023-11-24 |
| KR20210029072A (en) | 2021-03-15 |
| KR102478688B1 (en) | 2022-12-16 |
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