CN102612731B - 用于从离子源部件清除残余物的方法和设备 - Google Patents

用于从离子源部件清除残余物的方法和设备 Download PDF

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Publication number
CN102612731B
CN102612731B CN201080051134.6A CN201080051134A CN102612731B CN 102612731 B CN102612731 B CN 102612731B CN 201080051134 A CN201080051134 A CN 201080051134A CN 102612731 B CN102612731 B CN 102612731B
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CN
China
Prior art keywords
plasma
residue
gas
purge
ion source
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CN201080051134.6A
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English (en)
Chinese (zh)
Other versions
CN102612731A (zh
Inventor
阿西木·斯里瓦斯塔瓦
威廉·迪韦尔吉利奥
格伦·吉尔克里斯特
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Axcelis Technologies Inc
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Axcelis Technologies Inc
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Publication of CN102612731A publication Critical patent/CN102612731A/zh
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Expired - Fee Related legal-status Critical Current
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
    • H01J2237/0225—Detecting or monitoring foreign particles

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)
  • Cleaning In General (AREA)
CN201080051134.6A 2009-11-11 2010-11-12 用于从离子源部件清除残余物的方法和设备 Expired - Fee Related CN102612731B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/616,662 2009-11-11
US12/616,662 US20110108058A1 (en) 2009-11-11 2009-11-11 Method and apparatus for cleaning residue from an ion source component
PCT/US2010/002969 WO2011059504A2 (en) 2009-11-11 2010-11-12 Method and apparatus for cleaning residue from an ion source component

Publications (2)

Publication Number Publication Date
CN102612731A CN102612731A (zh) 2012-07-25
CN102612731B true CN102612731B (zh) 2016-03-16

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201080051134.6A Expired - Fee Related CN102612731B (zh) 2009-11-11 2010-11-12 用于从离子源部件清除残余物的方法和设备

Country Status (7)

Country Link
US (2) US20110108058A1 (enExample)
EP (1) EP2499653A2 (enExample)
JP (1) JP5827235B2 (enExample)
KR (1) KR101741405B1 (enExample)
CN (1) CN102612731B (enExample)
TW (1) TWI500064B (enExample)
WO (1) WO2011059504A2 (enExample)

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US20130250293A1 (en) * 2012-03-20 2013-09-26 Fei Company Method and Apparatus for Actively Monitoring an Inductively-Coupled Plasma Ion Source using an Optical Spectrometer
US9142392B2 (en) * 2013-04-29 2015-09-22 Varian Semiconductor Equipment Associates, Inc. Self-cleaning radio frequency plasma source
US9006690B2 (en) * 2013-05-03 2015-04-14 Axcelis Technologies, Inc. Extraction electrode assembly voltage modulation in an ion implantation system
CN106456611B (zh) * 2014-03-11 2021-07-20 红山生物医药有限公司 用于治疗恶心、呕吐或腹泻症状的恩丹西酮缓释固体制剂
JP6439620B2 (ja) * 2015-07-28 2018-12-19 株式会社ニューフレアテクノロジー 電子源のクリーニング方法及び電子ビーム描画装置
US10062548B2 (en) 2015-08-31 2018-08-28 Varian Semiconductor Equipment Associates, Inc. Gas injection system for ion beam device
US10141161B2 (en) 2016-09-12 2018-11-27 Varian Semiconductor Equipment Associates, Inc. Angle control for radicals and reactive neutral ion beams
US10161034B2 (en) 2017-04-21 2018-12-25 Lam Research Corporation Rapid chamber clean using concurrent in-situ and remote plasma sources
US10676370B2 (en) * 2017-06-05 2020-06-09 Axcelis Technologies, Inc. Hydrogen co-gas when using aluminum iodide as an ion source material
US10580632B2 (en) * 2017-12-18 2020-03-03 Agilent Technologies, Inc. In-situ conditioning in mass spectrometry systems
CN113663988B (zh) * 2018-10-18 2023-09-05 汉辰科技股份有限公司 清理离子布植机内部氟化表面的方法及装置
CN109447013B (zh) * 2018-11-06 2022-02-15 重庆工程职业技术学院 计算机用户身份识别设备
JP7385809B2 (ja) * 2019-09-05 2023-11-24 日新イオン機器株式会社 イオンビーム照射装置のクリーニング方法
US20250046586A1 (en) * 2023-07-31 2025-02-06 Veeco Instruments Inc. Plasma vessel cleaning for ion beam system

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CN1894763A (zh) * 2003-12-12 2007-01-10 山米奎普公司 用于在离子植入中延长设备正常运行时间的方法及装置
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CN1325131A (zh) * 1995-07-17 2001-12-05 艾克塞利斯技术公司 具有原位除去污物的离子束注入机
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TW200903596A (en) * 2007-03-30 2009-01-16 Advanced Tech Materials Method of forming ultra-shallow junctions for semiconductor devices

Also Published As

Publication number Publication date
EP2499653A2 (en) 2012-09-19
WO2011059504A2 (en) 2011-05-19
US20130305989A1 (en) 2013-11-21
KR101741405B1 (ko) 2017-05-30
JP5827235B2 (ja) 2015-12-02
TW201137920A (en) 2011-11-01
KR20120098774A (ko) 2012-09-05
US20110108058A1 (en) 2011-05-12
WO2011059504A3 (en) 2011-10-27
TWI500064B (zh) 2015-09-11
JP2013511128A (ja) 2013-03-28
CN102612731A (zh) 2012-07-25

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