JP5827235B2 - 残留物を清浄する方法および装置 - Google Patents

残留物を清浄する方法および装置 Download PDF

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Publication number
JP5827235B2
JP5827235B2 JP2012538809A JP2012538809A JP5827235B2 JP 5827235 B2 JP5827235 B2 JP 5827235B2 JP 2012538809 A JP2012538809 A JP 2012538809A JP 2012538809 A JP2012538809 A JP 2012538809A JP 5827235 B2 JP5827235 B2 JP 5827235B2
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Japan
Prior art keywords
plasma
residue
ion
gas
cleaning
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Expired - Fee Related
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JP2012538809A
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English (en)
Japanese (ja)
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JP2013511128A5 (enExample
JP2013511128A (ja
Inventor
シュリヴァスタヴァ，アシーム
ディヴェルジリオ，ウィリアム
ギルクリスト，グレン
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Axcelis Technologies Inc
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Axcelis Technologies Inc
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Publication of JP2013511128A5 publication Critical patent/JP2013511128A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
    • H01J2237/0225—Detecting or monitoring foreign particles

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)
  • Cleaning In General (AREA)
JP2012538809A 2009-11-11 2010-11-12 残留物を清浄する方法および装置 Expired - Fee Related JP5827235B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/616,662 2009-11-11
US12/616,662 US20110108058A1 (en) 2009-11-11 2009-11-11 Method and apparatus for cleaning residue from an ion source component
PCT/US2010/002969 WO2011059504A2 (en) 2009-11-11 2010-11-12 Method and apparatus for cleaning residue from an ion source component

Publications (3)

Publication Number Publication Date
JP2013511128A JP2013511128A (ja) 2013-03-28
JP2013511128A5 JP2013511128A5 (enExample) 2015-07-02
JP5827235B2 true JP5827235B2 (ja) 2015-12-02

Family

ID=43735816

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012538809A Expired - Fee Related JP5827235B2 (ja) 2009-11-11 2010-11-12 残留物を清浄する方法および装置

Country Status (7)

Country Link
US (2) US20110108058A1 (enExample)
EP (1) EP2499653A2 (enExample)
JP (1) JP5827235B2 (enExample)
KR (1) KR101741405B1 (enExample)
CN (1) CN102612731B (enExample)
TW (1) TWI500064B (enExample)
WO (1) WO2011059504A2 (enExample)

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US20130250293A1 (en) * 2012-03-20 2013-09-26 Fei Company Method and Apparatus for Actively Monitoring an Inductively-Coupled Plasma Ion Source using an Optical Spectrometer
US9142392B2 (en) * 2013-04-29 2015-09-22 Varian Semiconductor Equipment Associates, Inc. Self-cleaning radio frequency plasma source
US9006690B2 (en) * 2013-05-03 2015-04-14 Axcelis Technologies, Inc. Extraction electrode assembly voltage modulation in an ion implantation system
JP6461186B2 (ja) * 2014-03-11 2019-01-30 レッド ヒル バイオファーマ リミテッドＲｅｄＨｉｌｌ Ｂｉｏｐｈａｒｍａ Ｌｔｄ． 悪心、嘔吐または下痢の症状を処置するためのオンダンセトロン徐放固形製剤
JP6439620B2 (ja) * 2015-07-28 2018-12-19 株式会社ニューフレアテクノロジー 電子源のクリーニング方法及び電子ビーム描画装置
US10062548B2 (en) * 2015-08-31 2018-08-28 Varian Semiconductor Equipment Associates, Inc. Gas injection system for ion beam device
US10141161B2 (en) 2016-09-12 2018-11-27 Varian Semiconductor Equipment Associates, Inc. Angle control for radicals and reactive neutral ion beams
US10161034B2 (en) 2017-04-21 2018-12-25 Lam Research Corporation Rapid chamber clean using concurrent in-situ and remote plasma sources
US10676370B2 (en) * 2017-06-05 2020-06-09 Axcelis Technologies, Inc. Hydrogen co-gas when using aluminum iodide as an ion source material
US10580632B2 (en) * 2017-12-18 2020-03-03 Agilent Technologies, Inc. In-situ conditioning in mass spectrometry systems
CN111069188B (zh) * 2018-10-18 2021-09-14 汉辰科技股份有限公司 离子布植机内部的氟化表面的清理
CN109447013B (zh) * 2018-11-06 2022-02-15 重庆工程职业技术学院 计算机用户身份识别设备
JP7385809B2 (ja) * 2019-09-05 2023-11-24 日新イオン機器株式会社 イオンビーム照射装置のクリーニング方法
US20250046586A1 (en) * 2023-07-31 2025-02-06 Veeco Instruments Inc. Plasma vessel cleaning for ion beam system

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Also Published As

Publication number Publication date
CN102612731A (zh) 2012-07-25
KR101741405B1 (ko) 2017-05-30
US20110108058A1 (en) 2011-05-12
WO2011059504A3 (en) 2011-10-27
JP2013511128A (ja) 2013-03-28
EP2499653A2 (en) 2012-09-19
CN102612731B (zh) 2016-03-16
TWI500064B (zh) 2015-09-11
US20130305989A1 (en) 2013-11-21
WO2011059504A2 (en) 2011-05-19
TW201137920A (en) 2011-11-01
KR20120098774A (ko) 2012-09-05

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