KR101741405B1 - 이온 소스 부품으로부터 잔류물을 세정하기 위한 방법 및 장치 - Google Patents

이온 소스 부품으로부터 잔류물을 세정하기 위한 방법 및 장치 Download PDF

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Publication number
KR101741405B1
KR101741405B1 KR1020127015073A KR20127015073A KR101741405B1 KR 101741405 B1 KR101741405 B1 KR 101741405B1 KR 1020127015073 A KR1020127015073 A KR 1020127015073A KR 20127015073 A KR20127015073 A KR 20127015073A KR 101741405 B1 KR101741405 B1 KR 101741405B1
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South Korea
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plasma
gas
residue
ion source
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Korean (ko)
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KR20120098774A (ko
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아셈 스리바스타바
윌리암 디버길리오
글렌 길크리스트
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액셀리스 테크놀러지스, 인크.
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
    • H01J2237/0225—Detecting or monitoring foreign particles

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)
  • Cleaning In General (AREA)
KR1020127015073A 2009-11-11 2010-11-12 이온 소스 부품으로부터 잔류물을 세정하기 위한 방법 및 장치 Expired - Fee Related KR101741405B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/616,662 2009-11-11
US12/616,662 US20110108058A1 (en) 2009-11-11 2009-11-11 Method and apparatus for cleaning residue from an ion source component
PCT/US2010/002969 WO2011059504A2 (en) 2009-11-11 2010-11-12 Method and apparatus for cleaning residue from an ion source component

Publications (2)

Publication Number Publication Date
KR20120098774A KR20120098774A (ko) 2012-09-05
KR101741405B1 true KR101741405B1 (ko) 2017-05-30

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KR1020127015073A Expired - Fee Related KR101741405B1 (ko) 2009-11-11 2010-11-12 이온 소스 부품으로부터 잔류물을 세정하기 위한 방법 및 장치

Country Status (7)

Country Link
US (2) US20110108058A1 (enExample)
EP (1) EP2499653A2 (enExample)
JP (1) JP5827235B2 (enExample)
KR (1) KR101741405B1 (enExample)
CN (1) CN102612731B (enExample)
TW (1) TWI500064B (enExample)
WO (1) WO2011059504A2 (enExample)

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RU2522662C2 (ru) * 2011-08-03 2014-07-20 Федеральное государственное бюджетное учреждение "Государственный научный центр Российской Федерации - Институт Теоретической и Экспериментальной Физики" (ФГБУ "ГНЦ РФ ИТЭФ") Способ нерпрерываемого производства пучка ионов карборана с постоянной самоочисткой ионного источника и компонент системы экстракции ионного имплантатора
US20130250293A1 (en) * 2012-03-20 2013-09-26 Fei Company Method and Apparatus for Actively Monitoring an Inductively-Coupled Plasma Ion Source using an Optical Spectrometer
US9142392B2 (en) * 2013-04-29 2015-09-22 Varian Semiconductor Equipment Associates, Inc. Self-cleaning radio frequency plasma source
US9006690B2 (en) * 2013-05-03 2015-04-14 Axcelis Technologies, Inc. Extraction electrode assembly voltage modulation in an ion implantation system
JP6461186B2 (ja) * 2014-03-11 2019-01-30 レッド ヒル バイオファーマ リミテッドＲｅｄＨｉｌｌ Ｂｉｏｐｈａｒｍａ Ｌｔｄ． 悪心、嘔吐または下痢の症状を処置するためのオンダンセトロン徐放固形製剤
JP6439620B2 (ja) * 2015-07-28 2018-12-19 株式会社ニューフレアテクノロジー 電子源のクリーニング方法及び電子ビーム描画装置
US10062548B2 (en) * 2015-08-31 2018-08-28 Varian Semiconductor Equipment Associates, Inc. Gas injection system for ion beam device
US10141161B2 (en) 2016-09-12 2018-11-27 Varian Semiconductor Equipment Associates, Inc. Angle control for radicals and reactive neutral ion beams
US10161034B2 (en) 2017-04-21 2018-12-25 Lam Research Corporation Rapid chamber clean using concurrent in-situ and remote plasma sources
US10676370B2 (en) * 2017-06-05 2020-06-09 Axcelis Technologies, Inc. Hydrogen co-gas when using aluminum iodide as an ion source material
US10580632B2 (en) * 2017-12-18 2020-03-03 Agilent Technologies, Inc. In-situ conditioning in mass spectrometry systems
CN111069188B (zh) * 2018-10-18 2021-09-14 汉辰科技股份有限公司 离子布植机内部的氟化表面的清理
CN109447013B (zh) * 2018-11-06 2022-02-15 重庆工程职业技术学院 计算机用户身份识别设备
JP7385809B2 (ja) * 2019-09-05 2023-11-24 日新イオン機器株式会社 イオンビーム照射装置のクリーニング方法
US20250046586A1 (en) * 2023-07-31 2025-02-06 Veeco Instruments Inc. Plasma vessel cleaning for ion beam system

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US20080223409A1 (en) 2003-12-12 2008-09-18 Horsky Thomas N Method and apparatus for extending equipment uptime in ion implantation
US20090095713A1 (en) * 2004-10-26 2009-04-16 Advanced Technology Materials, Inc. Novel methods for cleaning ion implanter components

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US20090095713A1 (en) * 2004-10-26 2009-04-16 Advanced Technology Materials, Inc. Novel methods for cleaning ion implanter components

Also Published As

Publication number Publication date
CN102612731A (zh) 2012-07-25
US20110108058A1 (en) 2011-05-12
WO2011059504A3 (en) 2011-10-27
JP5827235B2 (ja) 2015-12-02
JP2013511128A (ja) 2013-03-28
EP2499653A2 (en) 2012-09-19
CN102612731B (zh) 2016-03-16
TWI500064B (zh) 2015-09-11
US20130305989A1 (en) 2013-11-21
WO2011059504A2 (en) 2011-05-19
TW201137920A (en) 2011-11-01
KR20120098774A (ko) 2012-09-05

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