TWI500064B - 用於移除來自離子源構件之殘餘物之方法、協助移除來自束構件之殘餘物之系統及離子植入系統 - Google Patents

用於移除來自離子源構件之殘餘物之方法、協助移除來自束構件之殘餘物之系統及離子植入系統 Download PDF

Info

Publication number
TWI500064B
TWI500064B TW099138796A TW99138796A TWI500064B TW I500064 B TWI500064 B TW I500064B TW 099138796 A TW099138796 A TW 099138796A TW 99138796 A TW99138796 A TW 99138796A TW I500064 B TWI500064 B TW I500064B
Authority
TW
Taiwan
Prior art keywords
plasma
residue
gas
ion
cleaning
Prior art date
Application number
TW099138796A
Other languages
English (en)
Chinese (zh)
Other versions
TW201137920A (en
Inventor
Aseem K Srivastava
William F Divergilio
Glen R Gilchrist
Original Assignee
Axcelis Tech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Axcelis Tech Inc filed Critical Axcelis Tech Inc
Publication of TW201137920A publication Critical patent/TW201137920A/zh
Application granted granted Critical
Publication of TWI500064B publication Critical patent/TWI500064B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/08—Ion sources; Ion guns
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/48—Ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
    • H01J2237/0225—Detecting or monitoring foreign particles

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Plasma Technology (AREA)
  • Physical Vapour Deposition (AREA)
  • Cleaning In General (AREA)
TW099138796A 2009-11-11 2010-11-11 用於移除來自離子源構件之殘餘物之方法、協助移除來自束構件之殘餘物之系統及離子植入系統 TWI500064B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/616,662 US20110108058A1 (en) 2009-11-11 2009-11-11 Method and apparatus for cleaning residue from an ion source component

Publications (2)

Publication Number Publication Date
TW201137920A TW201137920A (en) 2011-11-01
TWI500064B true TWI500064B (zh) 2015-09-11

Family

ID=43735816

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099138796A TWI500064B (zh) 2009-11-11 2010-11-11 用於移除來自離子源構件之殘餘物之方法、協助移除來自束構件之殘餘物之系統及離子植入系統

Country Status (7)

Country Link
US (2) US20110108058A1 (enExample)
EP (1) EP2499653A2 (enExample)
JP (1) JP5827235B2 (enExample)
KR (1) KR101741405B1 (enExample)
CN (1) CN102612731B (enExample)
TW (1) TWI500064B (enExample)
WO (1) WO2011059504A2 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120235058A1 (en) * 2010-09-15 2012-09-20 Ashwini Sinha Method for extending lifetime of an ion source
US9653327B2 (en) * 2011-05-12 2017-05-16 Applied Materials, Inc. Methods of removing a material layer from a substrate using water vapor treatment
RU2522662C2 (ru) * 2011-08-03 2014-07-20 Федеральное государственное бюджетное учреждение "Государственный научный центр Российской Федерации - Институт Теоретической и Экспериментальной Физики" (ФГБУ "ГНЦ РФ ИТЭФ") Способ нерпрерываемого производства пучка ионов карборана с постоянной самоочисткой ионного источника и компонент системы экстракции ионного имплантатора
US20130250293A1 (en) * 2012-03-20 2013-09-26 Fei Company Method and Apparatus for Actively Monitoring an Inductively-Coupled Plasma Ion Source using an Optical Spectrometer
US9142392B2 (en) * 2013-04-29 2015-09-22 Varian Semiconductor Equipment Associates, Inc. Self-cleaning radio frequency plasma source
US9006690B2 (en) * 2013-05-03 2015-04-14 Axcelis Technologies, Inc. Extraction electrode assembly voltage modulation in an ion implantation system
JP6461186B2 (ja) * 2014-03-11 2019-01-30 レッド ヒル バイオファーマ リミテッドＲｅｄＨｉｌｌ Ｂｉｏｐｈａｒｍａ Ｌｔｄ． 悪心、嘔吐または下痢の症状を処置するためのオンダンセトロン徐放固形製剤
JP6439620B2 (ja) * 2015-07-28 2018-12-19 株式会社ニューフレアテクノロジー 電子源のクリーニング方法及び電子ビーム描画装置
US10062548B2 (en) * 2015-08-31 2018-08-28 Varian Semiconductor Equipment Associates, Inc. Gas injection system for ion beam device
US10141161B2 (en) 2016-09-12 2018-11-27 Varian Semiconductor Equipment Associates, Inc. Angle control for radicals and reactive neutral ion beams
US10161034B2 (en) 2017-04-21 2018-12-25 Lam Research Corporation Rapid chamber clean using concurrent in-situ and remote plasma sources
US10676370B2 (en) * 2017-06-05 2020-06-09 Axcelis Technologies, Inc. Hydrogen co-gas when using aluminum iodide as an ion source material
US10580632B2 (en) * 2017-12-18 2020-03-03 Agilent Technologies, Inc. In-situ conditioning in mass spectrometry systems
CN111069188B (zh) * 2018-10-18 2021-09-14 汉辰科技股份有限公司 离子布植机内部的氟化表面的清理
CN109447013B (zh) * 2018-11-06 2022-02-15 重庆工程职业技术学院 计算机用户身份识别设备
JP7385809B2 (ja) * 2019-09-05 2023-11-24 日新イオン機器株式会社 イオンビーム照射装置のクリーニング方法
US20250046586A1 (en) * 2023-07-31 2025-02-06 Veeco Instruments Inc. Plasma vessel cleaning for ion beam system

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6333268B1 (en) * 1999-09-17 2001-12-25 Novellus Systems, Inc. Method and apparatus for removing post-etch residues and other adherent matrices
US6355933B1 (en) * 1999-01-13 2002-03-12 Advanced Micro Devices, Inc. Ion source and method for using same
TW200625457A (en) * 2005-01-11 2006-07-16 Taiwan Semiconductor Mfg Co Ltd Etching process to avoid polysilicon notching
CN1894763A (zh) * 2003-12-12 2007-01-10 山米奎普公司 用于在离子植入中延长设备正常运行时间的方法及装置
WO2008121620A1 (en) * 2007-03-30 2008-10-09 Advanced Technology Materials, Inc. Method of forming ultra-shallow junctions for semiconductor devices
CN101437629A (zh) * 2004-10-26 2009-05-20 高级技术材料公司 用于清洗离子注入机元件的新方法

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2631258B1 (fr) * 1988-05-10 1991-04-05 Prestations Services Sps Procede de nettoyage en surface par plasma differe
US5200023A (en) * 1991-08-30 1993-04-06 International Business Machines Corp. Infrared thermographic method and apparatus for etch process monitoring and control
JPH06176724A (ja) * 1992-01-23 1994-06-24 Tokyo Electron Ltd イオン源装置
JP2618817B2 (ja) * 1993-07-09 1997-06-11 岩谷産業株式会社 半導体製造装置でのノンプラズマクリーニング方法
JPH0786242A (ja) * 1993-09-10 1995-03-31 Fujitsu Ltd 半導体装置の製造方法
US5554854A (en) * 1995-07-17 1996-09-10 Eaton Corporation In situ removal of contaminants from the interior surfaces of an ion beam implanter
US5661308A (en) * 1996-05-30 1997-08-26 Eaton Corporation Method and apparatus for ion formation in an ion implanter
US5812403A (en) * 1996-11-13 1998-09-22 Applied Materials, Inc. Methods and apparatus for cleaning surfaces in a substrate processing system
US5814823A (en) * 1997-07-12 1998-09-29 Eaton Corporation System and method for setecing neutral particles in an ion bean
US6135128A (en) * 1998-03-27 2000-10-24 Eaton Corporation Method for in-process cleaning of an ion source
US6182603B1 (en) * 1998-07-13 2001-02-06 Applied Komatsu Technology, Inc. Surface-treated shower head for use in a substrate processing chamber
US6221169B1 (en) * 1999-05-10 2001-04-24 Axcelis Technologies, Inc. System and method for cleaning contaminated surfaces in an ion implanter
US6420275B1 (en) * 1999-08-30 2002-07-16 Micron Technology, Inc. System and method for analyzing a semiconductor surface
US20030056388A1 (en) * 2000-07-18 2003-03-27 Hiromoto Ohno Cleaning gas for semiconductor production equipment
US6635144B2 (en) * 2001-04-11 2003-10-21 Applied Materials, Inc Apparatus and method for detecting an end point of chamber cleaning in semiconductor equipment
GB0128913D0 (en) * 2001-12-03 2002-01-23 Applied Materials Inc Improvements in ion sources for ion implantation apparatus
US7106438B2 (en) * 2002-12-12 2006-09-12 Perkinelmer Las, Inc. ICP-OES and ICP-MS induction current
US20040235299A1 (en) * 2003-05-22 2004-11-25 Axcelis Technologies, Inc. Plasma ashing apparatus and endpoint detection process
US20080223409A1 (en) * 2003-12-12 2008-09-18 Horsky Thomas N Method and apparatus for extending equipment uptime in ion implantation
US7791047B2 (en) * 2003-12-12 2010-09-07 Semequip, Inc. Method and apparatus for extracting ions from an ion source for use in ion implantation
GB2412488B (en) * 2004-03-26 2007-03-28 Applied Materials Inc Ion sources
US8278222B2 (en) * 2005-11-22 2012-10-02 Air Products And Chemicals, Inc. Selective etching and formation of xenon difluoride
KR101455404B1 (ko) * 2005-12-09 2014-10-27 세미이큅, 인코포레이티드 탄소 클러스터의 주입에 의한 반도체 디바이스의 제조를위한 시스템 및 방법
US7531819B2 (en) * 2005-12-20 2009-05-12 Axcelis Technologies, Inc. Fluorine based cleaning of an ion source
EP2021528A4 (en) * 2006-04-26 2011-03-23 Advanced Tech Materials CLEANING OF SEMICONDUCTOR PROCESSING SYSTEMS
US8110815B2 (en) * 2006-06-12 2012-02-07 Semequip, Inc. Vapor delivery to devices under vacuum
US8013312B2 (en) * 2006-11-22 2011-09-06 Semequip, Inc. Vapor delivery system useful with ion sources and vaporizer for use in such system
US7947966B2 (en) * 2007-07-31 2011-05-24 Axcelis Technologies, Inc. Double plasma ion source
WO2009102762A2 (en) * 2008-02-11 2009-08-20 Sweeney Joseph D Ion source cleaning in semiconductor processing systems
US8158017B2 (en) * 2008-05-12 2012-04-17 Lam Research Corporation Detection of arcing events in wafer plasma processing through monitoring of trace gas concentrations
US8809800B2 (en) * 2008-08-04 2014-08-19 Varian Semicoductor Equipment Associates, Inc. Ion source and a method for in-situ cleaning thereof
US8263944B2 (en) * 2008-12-22 2012-09-11 Varian Semiconductor Equipment Associates, Inc. Directional gas injection for an ion source cathode assembly
US7999479B2 (en) * 2009-04-16 2011-08-16 Varian Semiconductor Equipment Associates, Inc. Conjugated ICP and ECR plasma sources for wide ribbon ion beam generation and control
US8003959B2 (en) * 2009-06-26 2011-08-23 Varian Semiconductor Equipment Associates, Inc. Ion source cleaning end point detection

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6355933B1 (en) * 1999-01-13 2002-03-12 Advanced Micro Devices, Inc. Ion source and method for using same
US6333268B1 (en) * 1999-09-17 2001-12-25 Novellus Systems, Inc. Method and apparatus for removing post-etch residues and other adherent matrices
CN1894763A (zh) * 2003-12-12 2007-01-10 山米奎普公司 用于在离子植入中延长设备正常运行时间的方法及装置
CN101437629A (zh) * 2004-10-26 2009-05-20 高级技术材料公司 用于清洗离子注入机元件的新方法
TW200625457A (en) * 2005-01-11 2006-07-16 Taiwan Semiconductor Mfg Co Ltd Etching process to avoid polysilicon notching
WO2008121620A1 (en) * 2007-03-30 2008-10-09 Advanced Technology Materials, Inc. Method of forming ultra-shallow junctions for semiconductor devices

Also Published As

Publication number Publication date
CN102612731A (zh) 2012-07-25
KR101741405B1 (ko) 2017-05-30
US20110108058A1 (en) 2011-05-12
WO2011059504A3 (en) 2011-10-27
JP5827235B2 (ja) 2015-12-02
JP2013511128A (ja) 2013-03-28
EP2499653A2 (en) 2012-09-19
CN102612731B (zh) 2016-03-16
US20130305989A1 (en) 2013-11-21
WO2011059504A2 (en) 2011-05-19
TW201137920A (en) 2011-11-01
KR20120098774A (ko) 2012-09-05

Similar Documents

Publication Publication Date Title
TWI500064B (zh) 用於移除來自離子源構件之殘餘物之方法、協助移除來自束構件之殘餘物之系統及離子植入系統
CN103222029B (zh) 用于锗和硼离子注入的助气的实施
TWI725970B (zh) 離子植入系統以及原位電漿清洗方法
KR101065449B1 (ko) 이온원 장치 및 그의 클리닝 최적화 방법
CN102105966B (zh) 离子植入设备、多模式离子源及多模式中的离子植入方法
US8263944B2 (en) Directional gas injection for an ion source cathode assembly
US8193513B2 (en) Hybrid ion source/multimode ion source
TWI437608B (zh) 離子源清潔方法及其裝置
US20110143527A1 (en) Techniques for generating uniform ion beam
US20130140473A1 (en) Automatic Control System for Selection and Optimization of Co-Gas Flow Levels
TWI576900B (zh) 離子植入系統、用於離子植入器之設備以及用於離子植入器之方法
WO2010151523A1 (en) Ion source cleaning end point detection
US20030038246A1 (en) Helium ion generation method and apparatus
KR102752650B1 (ko) 반도체 프로세싱 시스템, 및 작업물 내로 이온들을 주입하는 방법, 작업물을 프로세싱하는 방법, 작업물을 에칭하는 방법, 및 작업물 상에 재료를 증착하는 방법
JP5652771B2 (ja) 分子イオンを生成する方法および装置
KR101562785B1 (ko) 이중 플라즈마 이온 소오스

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees