TW200903596A - Method of forming ultra-shallow junctions for semiconductor devices - Google Patents

Abstract

A first method for producing a doped region in a semiconductor substrate includes performing a first implant step in which a carborane cluster molecule is implanted into a semiconductor substrate to form a doped region. A second method for producing a semiconductor device having a shallow junction region includes providing a first gas and a second gas in a container. The first gas includes a first dopant and the second gas includes a second dopant. The second method also includes implanting the first and second dopants into a semiconductor substrate using an ion. The ion source is not turned off between the steps of implanting the first dopant and implanting the second dopant.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates generally to the field of semiconductor devices such as integrated circuits, and more particularly to the formation of = for such semiconductor devices. Dian [Prior Art] In the PMOS type, the (4) ions are doped or implanted into the semiconductor substrate to form ultra-shallow junctions (such as the source or drain junction of (10), etc.) . In the "doping" procedure, the boron ions are implanted at a relatively low implantation energy, and the solder is electrically attenuated by thermal annealing to form the junction. The problem associated with the junction is that the plasma may diffuse to an undesired location in the semiconductor substrate during the subsequent annealing step, which may damage the semiconductor device and may be impaired. The crystal defects generated during the boron ion may be at least I,1; part of the reason for this diffusion phenomenon is _ Jii· 玍v疋.

U's method for reducing unwanted boron diffusion involves the implantation of fluoride ions prior to the repelling step. The 'seeking implanted ytterbium ions can be advantageously used to stabilize the gauze during the implantation of boron ions, which reduces the boron ion diffusion during annealing and is shallower in the substrate. The formation of the junction. Further, it has been pointed out that the diffusion of boron can be further reduced by implanting carbon and fluorine, 厌m and 虱 ions, respectively, into the semiconductor substrate. Household:: Implantation of strontium and/or carbon ions may allow for the formation of shallow junctions, but the use of eve implants may have a negative impact on radix and / rate. For example, although it is known that the junction forms only a Thunder α, it is a single implantation step (for example, boron ion), 130168.doc 200903596, but other types of procedures need to be implanted. step. In order to implant the stone, carbon and fluorine into the substrate, three individual implants may be required. Between the implants, the magnets and other components must be re-adjusted to take into account the different types of implants, ^Berry. In addition, with this ion source technology, the mother-injection may require different central source feed materials, meaning that between the implants must be followed by shutting down the source, a7 prior to feeding the material, introducing new feed materials, And restart the relative time-consuming order of the trimmed wood source. SUMMARY OF THE INVENTION One exemplary embodiment of the present invention is a (four) η, a bulk embodiment relating to a method for producing a doped region in a bulk substrate, and/or a step of implanting the carbon in the bean. The borane cluster molecules are implanted into the iridium isothermal substrate to form a doped region. Another exemplary embodiment of the present invention is directed to a crucible for forming a doped region in a semiconductor substrate. Also provided, comprising a base for holding a semiconductor substrate, and for implanting a carbon ruthenium ruthenium molecule into the semiconductor substrate

C to form a member of the doped region. Another exemplary embodiment of the present invention is directed to a semiconductor device having a shallow junction region. A method for producing a method for providing a first rolled body and a second gas is provided in a storage tank. . The first sturdy body contains a first dopant and the first gas comprises a second dopant. The ~3 method also includes implanting the first and first dopants into the vehicle and the substrate with ions. The ion source is not turned off between the step of implanting the first dopant and implanting the second dopant r-dump. [Embodiment] # According to a non-running specific embodiment, a plurality of types of replacement objects 130168.doc 200903596 are implanted into a semiconductor substrate to form a shape in the semiconductor substrate. (For example, for semiconductor devices "long zone specific embodiments, prior to connection to ion implant: junction). According to the first gas... The ion sinks of the ion implanter will have a plurality of sources per ##杂物 without rinsing the ion source (according to other exemplary embodiments, possibly between one or more implanted bovine Rinse the ion source). According to a second exemplary embodiment, the '-dopant species is comprised in a single molecule that is directly implanted into a semiconductor substrate. In a post-specific embodiment, the implant parameter 1 is selected to implant the various species at the appropriate depth and location. The exemplary embodiments described below provide an advantageous method of ultra-shallow junctions of the device, and (4) the volume/weight self-awareness method is more efficient and less labor intensive. According to a particular exemplary embodiment, the method for forming such an ultra-shallow junction allows the implantation procedure to be performed without shutting down the implanted instrument and rinsing the ions of the previously implanted source gas. According to other exemplary embodiments, the sample can be rinsed as an ion source between one or more of these implantation steps as needed. According to another specific exemplary embodiment, a method of simultaneously implanting a plurality of species into a semiconductor substrate is provided. It is desirable to provide a method of utilizing any one or more of the other advantages that are known to those of ordinary skill in the art. The drawings are not intended to illustrate a system 1G for producing a semiconductor device in accordance with an exemplary embodiment. The system 1G includes, inter alia, the following features: an implanter 20' having an ion source 6A; a gas box 50 for distributing a source gas to the ion source 6; and a magnet 4 for making The ion beam 64 is oriented to one or more semiconductor substrates or wafers 200. The substrates 200 are provided to a platform 32 (e.g., a support, abutment, pedestal, etc.) or other structure within the chamber 30 during the period of I30168.doc 200903596. The ion implanter can be any suitable ion implanter now known or later developed for use in a semiconductor fabrication facility. An example of such an implanter is available from Varian Semic〇nduct〇r E(4) ριη_ ASsoclates, Gloucester, Mass.; from Be_, BeveHy, Massachusetts, and Applied Materials Inc., Santa Clara, California. The gas tank 50 has a sump 52 (e.g., vessel, gas tank, cylinder, etc.) configured to store high pressure gas or other fluid and is routed to the ion source 6 through a transfer line 62. For example, in accordance with an exemplary embodiment, the sump 52 is a conventional high pressure gas cylinder wherein the elongate body portion has a neck portion having a cross-sectional area that is smaller than the body cross-section of the container. The sump 52 can include a valve head assembly that includes a valve (manual or automatic) and a pressure and flow control element (e.g., in a manifold configuration) in combination therewith. The sump 52 can also include a pressure regulator and/or other features to assist in the storage of the source gas and its delivery to the ion source 6〇. According to an exemplary embodiment, the sump 52 is a fluid storage and dispensing device, such as a vacuum actuated cylinder (VAC), similar to that described in U.S. Patent No. 6,101,816, U.S. Patent No. 6,343,476; No. 6,089,027, the entire disclosure of which is incorporated herein by reference. According to an exemplary embodiment, the fluid storage and delivery device can be a system, for example, described in U.S. Patent No. 5,518,528 (a low atmospheric pressure reactive gas storage and dispensing container), and is commercially available from ATMI, Inc. (US) 130168.doc 200903596 (Danbury, Connecticut) is a trademark SDS in which an active gas system is retained in a physical adsorbent and selectively desorbed from the adsorbent to distribute the reactive gas from the container. In another embodiment, the source of neat active fluid comprises a gas storage and dispensing container having the type described below: Luping Wang et al., U.S. Patent No. 6, _, 〇 27, and can be staked from ATMI, Inc. (Connecticut City, the city) trademark vac, which is characterized by an internal regulator element 'for distributing the reactive gas at a force determined by the regulator set point. Other fluid storage tray delivery systems may also be utilized, including but not necessarily limited to, for example, the systems described in U.S. Patent No. 5,7 (M, 965;; National Patent No. 6,743,278 and U.S. Patent No. 7,1,72,646. According to other exemplary embodiments, the device 52 can have any design or configuration suitable for storing the + source and transporting the # source gas or material as described herein (eg, ia μ μ - A storage and distribution of the body is crying. The tank is used to contain the pure active gas to be diluted to be used for the use of the liquid, or the fluid storage disc, the Zhiyi 1 with TM J can be any Suitable means of constituting and/or configuring, for example, a supply structure, a fabrication or a fabrication. For example, the activity $ _ source may comprise having a description of a slamming, an ancient body, s patent 5, 5 1 8, The type of 5 2 8 is mainly composed of inter-body physical adsorbent such as scallops, and is solid, and it is. In other specific embodiments, # fluid can release T 忒 activity from liquid solution or The ground generator was produced, and it was published in October 2004. Or if the brick is not the "reactive liquid-based and transport system", the United States's singularity of the king's rolling stock storage disclosure case 2, 4 / 2, 〇 2 〇 624 from the reactive liquid, 1 The sublimed solid described is obtained. A # ^ Α Α can be derivatized or available or supplied. In any suitable embodiment in which the active fluid can be used, the active fluid source comprises 130168.doc 200903596 Retaining Structure As described in US Patent No. 5,9! 6,245, entitled "High Capacity Gas Storage and Distribution System", published on June 29, 1999. Dissolved in a suitable solvent to make liquid precursors and/or solid precursors Direct injection of the precursor and/or transport of the liquid to the CVD, vaporizer unit. During CVD, ALD or RVD metallization of the VLSI device, accurate and precise delivery rates can be obtained through volumetric metering for reproducibility. The design of a solid precursor transport of a device such as PrP_E_(ATMI, Danbury, CT) can transport solid precursors extremely efficiently to CVD or ALD reactors, either solid or liquid) , Before the good.·! Tian Shuu in Pau 1 J. Marganski is equivalent to the system for transporting reagents from solid sources, in the form of a front-end precursor (for example, in the name of the hopper storage and distribution package, the title is ', used US temporary special funds please (4) secret 62, 515 [W0 20〇6/1 () 1767], and their respective storage and distribution equipment described in the following patents: US patent 5,5 18,528; ^ national patent 5,7Q4,965; U.S. Patent 5,7G4,967; U.S. Patent 5,707,424; U.S. Patent 6,101,816; U.S. Patent ^ _ Patent, please disclose 2q; US Patent 6,921,062; U.S. Patent 4, Patent Application 10 /858,509 [Publication No. 2005/0006799 No. 1; Month M ^ _ J and Wu Guo Patent Application No. 10/022, 298, all of which are hereby incorporated by reference in their entirety by way of reference to JJ,, | . Feeding the ion source into the source gas body. The source gas contains the elements to be implanted in the semiconductor substrate. The separation, Ϊ5 /士/原, using the applied electrical energy to form a plasma containing the early "point scorpion (eg, Β, F·) generated from the component of the source gas. Then the plasma is directed toward the face 3 The target contained in 〇中中七七 (for example, semiconductor substrate) plus 130168.doc 200903596 speed. The deep sound connection of the tooth penetration into the substrate is determined by several factors, including 哕The energy of the cesium ion and the ion species 疋匕3. The turf diagram 2 is a flow chart showing the geometry, and the formation of the shallow junction in the semi-conductive slab. Method 10 j Yufeng* body base one of Qiu Ba #^. Figure 3 to 6 is a cross-sectional view of the semiconductor substrate, illustrating the various dopant implantation steps. , Feng Feng "Yufeng conductor substrate or crystal ® 2 -, as shown in Figure 3) k to the ion implanter ("Ion the ion implanter 2" as shown in Figure 1) grab room 3 0 According to the exemplary embodiment of the early invention, the substrate 2 can be provided in the form of a stone wafer. According to the hair, he does not target specificity. In an embodiment, the substrate may comprise other suitable semiconductor materials such as sigma-de (Si_Ge) or gallium arsenide (GaAs), and the substrate may comprise other layers and/or materials, including buried oxides. Layers and the like. According to other exemplary embodiments, the ion source may also be adjusted to allow for the provision of multiple substrates (e.g., wafers) within the chamber. In step 115 of method 100, the source gas system is introduced. A suitable sump (e.g., sump 52 as shown in Figure 1). According to an exemplary embodiment, the source gas is provided directly to the sump. According to another exemplary embodiment, two or more blends may be employed. The debris precursor is circulated into the mixing chamber and is detected as needed prior to feeding to the ion source by the blending/metering system. The blending/metering system is, for example, U.S. Patent No. 6,909,973; U.S. Patent No. 7,058,519; U.S. Patent No. 7,063,097 and U.S. Patent No. 6,772,781. The source gas may be selected based on the desired implantation to be performed. For example, according to a particular exemplary embodiment, boron, carbon And fluoride ion implantation into the 130168.doc 200903596 substrate, the BF3 and ch4 gases can be introduced into the storage tank 52 (wherein the BF3 gas provides a butterfly and a deficient atom, and the CH4 gas provides a carbon atom), which makes BF3 to CH4 The partial pressure is between about 10:1 and 1:4. According to other exemplary embodiments, the desired implant characteristics may be used, and other suitable ratios may be used. According to various exemplary embodiments, gases may be used. Any suitable combination. According to another specific exemplary embodiment, wherein boron, carbon, and fluoride ions are implanted into the substrate, the sump can be mixed with a fluorocarbon (eg, CxFy, wherein 4^^14) and For example, boron-containing gas of boron trichloride (Bcl3). Other potential source gases that can be used to provide boron dopant species include borane (eg, BxHy 'where 25x^18 and 6^yS22) and derivatives thereof; boron hydrofluoride (eg 'BxHyFz, where 18, 1 <y< 22 and Κζ <26); borocarbon hydrofluoride (for example, bwCxHyFz, wherein lswd8, 0Sx^l2, 0SyS36 and 0SK14) and derivatives thereof; boron fluoride and its derivatives; B2F4; (BF2)3BR' R is selected from ph3, CF3 and CO. According to other exemplary embodiments, a large hydrogenated butterfly having a molecular formula of BXHyi can also be used, wherein 5^X596 and ySx+8, as described in, for example, U.S. Patent Application Serial No. 11/041,558 (publication No. 2005/ No. 0163693) the disclosure of which is incorporated herein by reference. Other potential source gases that may be used to provide such carbon and/or fluorine dopant species include hydrocarbons (eg, CxHy, where 15x^10 and 4Sy^3〇) and derivatives thereof, fluorohydrogen carbides (eg, CxHyFz, wherein, lSyS20 and Kz^20) and derivatives thereof, inter-halogen compound species (for example, RyFz, wherein R is a gas, bromine or moth, and 1 < χ < 4 and lSy < 10), and NF3. It should also be understood that, according to other exemplary embodiments, the end-source gas other than 130168.doc -13-200903596 described herein may be used to provide any of its species (eg, arsenic, phosphorus, indium, etc.). Etc.; can be based on a variety of factors - the selection of factors including the chemical knowledge of the gas mixture in the storage tank 'and its effect on the efficiency and life of the ion source. According to various exemplary and selected, the film In the case of the heart, any suitable number can be used (for example, the same -, two ", two or more different sources of boron, or the other quotation of θ w to carbon source gas, fluorine source gas and milk smear paint,语@— ι原乳体. According to other specific embodiments, it can be used in early surgery/original carcass (for example, ηρϋ, 丄, in step (2), there will be a tamper. Medium. 摅 摅~~ To the air box 5 of the ion implanter 30, the sump 52 may include the following features: Provide a fluid tight connection between the v;) v (eg, snail The connector is specifically incorporated into the substrate according to an exemplary embodiment. Since the mother-doping is implanted individually by k, the source gas is contained in the same storage tank 52, and the ion source is not required to be turned off, Flush the sump, and 'subsource. Instead, accelerate the ions from the source plasma into a magnetic spectrometer that is tuned to a specific magnetic field. The magnetic spectrometer (4) selects ions; only the ions selected by the spectrometer (for example, The substrate.m #c ion) will be strongly guided by the guide field~a into a younger one, the magnetic spectrometer will be re-adjusted to different--the second type of step 12S included in the electricity. Finding the number of implants is also the first choice of the first type in the implanted substrate. The magnets of the ion implanter can be appropriately re-adjusted and other 130168.doc -14- 200903596

The component ' is used to select the desired mass and energy for implanting the dopant (e.g., to adjust the accelerating voltage and magnetic field of the implanter). The particular implant parameters selected may vary depending on a number of factors, including the desired concentration and depth of implantation in the substrate, the type of implant, the source gas used, and other factors. According to a specific embodiment, wherein the carbon is in a first type to be implanted, and the storage tank 52 contains a CH4 source gas, an implantation energy having a value between about 1 and 50 keV may be selected to obtain about 10] The concentration in the substrate between 4 and 1 〇 5 ions/cm 2 and the depth between about 10 and 500 nm. In step 130 shown in FIG. 4, the [dopant implanted (such as arrow 21) is passed through the top surface 202 of the substrate 2 to the desired implant depth and concentration in the β-base substrate 200. The region formed in the semiconductor microstructure (for example, carbon dopant) bites and is heterozygous; J ^ is domain 220. The first dopant is implanted to a depth greater than the depth at which the ultra-shallow junction is to be created, according to an exemplary embodiment. According to other exemplary embodiments, the first dopant may be implanted to a depth less than or equal to the depth at which the ultra-shallow junction is to be created. In step 1 3 5, the material 4 main & „ + the second type of implant parameters to be implanted in the substrate can also be re-adjusted to adjust the fence, such as, And other groups of cattle, to select the implanted dopant ', the acceleration of the implanter ... and f and H (for example: adjustable acceleration voltage and magnetic field). Note not between the steps Doping I', implanting the ion source, and the delivery line 62. As described in the specific implant parameters selected, the specific embodiment, the Fuzhong rush in the foreign language assists according to a non-compliance containing BF3 source gas, Class and the storage tank 52

Tv & 曰 k has a ratio between about 1 and 50 keV to obtain a concentration of about 1 〇 14 盥] of the plant, 1 〇 ion / cm, 130168.doc 200903596 and The depth between about 10 and 500 nm. The second dopant is implanted (as indicated by arrow 212) through a top surface 2 of the substrate 2 to the desired implant depth and concentration in step 14 of Figure 5. A region or region 222 comprising a desired dopant (e.g., a fluorine dopant) within the semiconductor microstructure is formed in the substrate 200. According to an exemplary embodiment, the second dopant is implanted to a depth equal to the depth of the first dopant. However, according to other exemplary embodiments, the depth of the second implant may be greater or less than the first implant. Into the depth. It should also be noted that although it is described that carbon and fluorine are continuously implanted as the first and second dopants, respectively, according to other exemplary embodiments, the order may be reversed. In addition, similar steps may be performed to accomplish such implantation when the other species are additionally implanted in addition to or in addition to carbon and/or fluorine (eg, the parameters selected for the implantation may be end-implanted) Change by type). In step 145, the number of implants is selected for the boron ions to be implanted into the substrate. The magnets and other components of the ion implanter can also be appropriately re-adjusted to select the mass and energy of the implanted dopant (e.g., the accelerating voltage and magnetic field of the implant can be adjusted). Of note, the ion source 60 and the transfer line 62 are not flushed between the implantation steps. As noted above, the particular implant parameters selected may vary based on several factors. According to an exemplary embodiment, a third type of rotten plant to be implanted and the storage tank 52 containing a β^3 source gas, an implant energy having a value between about 0.1 and 20 kev may be selected to obtain The substrate between 1014 and 10, sub/cm2 is concentrated [and at a depth of about 5 盥 2 〇〇 nanometer. In step 150 shown in FIG. 6, the boron 130168.doc •16-200903596 is ion implanted through the top surface 202 of the substrate 200 (as indicated by arrow 2丨4) to the desired implantation depth and concentration to form Doped region 224 and junction 24G. According to an exemplary embodiment, the stone ion is implanted to a temperature less than the clothing of the first and second dopants, however, according to other exemplary embodiments, the depth of the implant may be greater or less The depth of the first and/or second implant. Advantageously, it is contemplated that the first and second implanted species (e.g., meal fluoride) limit (d) diffusion during the subsequent annealing step 155. It should be understood that the composition of zones 222 and 224 may vary with the depth of the warfare (for example, compared to the bottom of zone 224, the top may only have a larger concentration of boron atoms on the right side), and There may be a type of atom in the zone (for example, zone 224 may contain carbon, fluorine, and boron ions implanted therein). The superiority of the mixture of the source gases and the source of the gas can be continuously operated throughout the co-implantation. This savings is the time it takes to shut down, change the feed material, and restart the source. J Ma changed the type and energy, only need to re-= line magnet and high „power, this is a much faster procedure to completely change the ion source dopant. For batch-loaded wafer loading to large rotating disk In the middle, T will be advantageous in this case, leaving the wafers on the δ-heel, while re-adjusting the beam magnet and the power supply, and then starting the next co-implantation. In a way that eliminates the time required to unload and reload the 5th day of the Japanese calendar. It should be understood that it is also possible to use the local method of discontinuity, such as the US patent described on February 5, 2007. Pro ^1〇b 219 to the application of the 6th / 888, 3 Μ 及 及 及 及 及 及 及 及 及 国际 pr pr pr pr pr pr pr pr pr pr pr pr pr pr pr pr pr pr pr pr pr pr pr pr pr pr pr pr pr pr pr pr pr pr pr pr pr 2〇〇5/〇38]02 The manner of reference is incorporated herein in its entirety. For example, 130168.doc 200903596 may use gas-based compounds (eg, XeF2, xeF4, XeF6, before deposits are transferred to a substrate in an ion beam). NF3, IF5, IF7, sf6, C2F6, F2, CF4, KrF2, Cl2, HC, C1F3, Cl〇2, N2f4, N2 F2, N3F, NFH2, NH2F), compounds of the formula CxFy (eg C3F6, C3F8, C4F8 and C5F8), compounds of the formula CXHyFZ (eg CHF3, CH2F2, CH3F, C2HF5, C2H2F4, C2H3F3, C2H4f2)

The U and C2H5F), the compound of formula cxHyOz, COF2, HF or an organic gas (e.g., C0C12, CC14, CHC13, CH2Clj CH3C1) undergoes at least partial removal of the deposit and the deposit is removed from the ion source. The conditions under which the reaction of the gaseous gas compound with the deposits may include any suitable conditions of temperature, pressure, flow rate, composition, etc. that chemically interact the gas halide with the material desired to be removed. Examples of various conditions that may be utilized include ambient temperature, temperature above ambient temperature, presence of plasma, absence of plasma, and low atmospheric pressure $. The particular temperature for such gas-based contact can range from about to about 1 Torr. The contacting can include delivery of a gaseous dentate in the carrier gas or in neat form or with another cleaning agent, dopant, or the like. a gas toothing agent, a reaction kinetics for chemical reaction with a sediment of a squash, a heart reaction. To increase the cleaning composition, the cleaning composition can be specially adjusted for the use of xeF2 or * The source of supply, for example, is more fully described in the month, the soil in the United States, the temporary special stab by the moon case No. 60/662, 5 15 and the US provisional patent A T May Jojo 60/662 accounted for the title "for use from Solid source transport reagents, 96 唬 乂糸 I 国际 international case PCT/Us 06/08530 solid source transport 冽曱, month, 糸, the disclosure 130168.doc • 18- 200903596 People in this article. Alternatively, the feed can be provided to a mixture of gases contained in the transfer system. Figures 2 to 6. A method of sequentially implanting a plurality of foreign materials into a semiconductor substrate is described, but according to another exemplary embodiment, each of the dopant species is simultaneously implanted in a substrate. For example, the source material (4) according to the exemplary embodiment of the invention is to employ at least two, and preferably all, of the desired species of molecules to be co-implanted into the semiconductor substrate.

Figure 7 is a (10) spearhead diagram illustrating the steps of a method of forming a shallow junction in a semiconductor substrate in accordance with an exemplary embodiment. Figures 8 through 9 are cross-sectional views of a portion of a semiconductor substrate 400 illustrating various dopant implantation steps. In accordance with step 310, a semiconductor substrate or wafer 4 (e.g., as illustrated in Figure 8) is provided into the chamber of the ion implanter. According to an exemplary embodiment, the substrate 400 can be provided in the form of a wafer. According to other exemplary embodiments, the substrate may comprise other suitable semiconductor materials such as germanium-tellurium (Si-Ge) or gallium arsenide (GaAs). In addition, the substrate may comprise other layers and/or materials' comprising buried oxide (ruthenium) layers and the like. Exemplary embodiments of ion sources for transporting unused cluster molecules are illustrated in Figures 10-12. According to an exemplary embodiment, the ion source is commercially available from the Clusteron® ion source of SemEquip Inc. of Billerica, Massachusetts. According to other exemplary embodiments, unused ion molecules can be delivered to the substrate using other types of ion sources or delivery devices. For example, the plasma doping techniques and systems can be used to implant cluster molecules into a substrate, such as, but not necessarily limited to, those described in US Patent No. 130,168.doc -19-200903596, filed on No. 02087307. In view of the fact that conventional ions are derived from a source material to produce a plasma in which molecules of the source material dissociate to form ions, according to an exemplary embodiment, an ion source for transporting unused knives to the substrate uses a replacement ion. The process produces a strong ion beam of macromolecules without dissociation. The various components of the ruthenium molecule are held together by electrons. Upon entering the substrate (eg, 'in the first few atomic layers), the bound electrons are immediately stripped due to interaction with atoms in the substrate 'these components travel in individual atoms into the substrate (eg, In the case of a molecule of the formula: 2_C2Bi 〇Hi2, the surface of the substrate is immediately separated into 24 individual atoms, each having its own energy. Various advantages can be obtained by using the Cai ion source. For example, the implant procedure employs a higher energy than a conventional implant procedure (eg, the total amount of energy will be used to sum up the energy required to implant each of the individual components into the substrate), and The number of dopant species to be implanted in the cluster molecules; proportionally increasing the dose rate. Furthermore, no beam deceleration is required, reducing or eliminating the need to correlate with the conventional implant procedure # _ t At Θ % 5 dyeing and beam divergence. Method 3 〇〇 step 32 中 中 中 刀 knife provided in a suitable storage tank (for example, the storage tank 52 shown in Figure i). According to one (two cases, the cluster molecules contain 稗All of the dopant species (eg, daughter borofluorocarbon molecules) to be implanted in the 匕3 。 々 / / 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 , clusters " 2 3 subsets of dopant species to be implanted (for example, when it is necessary to include, stone, gas, and > 5 friends, 八八工沉& Λ 罝 罝 into the molecular planting eight (four) Heart I: "Molecular 'where the fluorine system, V骒 or later implanted separately.) 130168.doc •20- 2 00903596 Preferably, all the dopant species contained in the cluster molecules are simultaneously implanted into the substrate. In step 330, the implantation parameters are selected for the 轶 molecule for the Ming VIII. Molecular, atomic planting The energy system is proportional to its mass rake, Berry, and its square of velocity. When the surface of the Bayi main, the entire molecule and each of its knives travel at the same speed. Therefore, with each of the molecules The ratio of the total energy of the individual original correlations will be proportional to the mass ratio of atoms in the molecule: the right implant energy required for each component is known, and the molecule with the appropriate atomic mass ratio is selected. For example, if it is desired to have an implantation energy of a W.9kev (19f) atom and a UDV (1]B) atom, a Bf3 molecule having a total implantation energy of, for example, 6·8 keV can be utilized. In step 340 shown in ^, a cluster of molecules (as indicated by arrow 41A) is implanted through the top surface 4〇2 of the substrate 4 to implant the components of the molecule to the desired implantation depth. And concentration. As illustrated in Figure 9, three different layers are formed in the substrate. Separation regions 422, 424, and 426 are formed. For example, according to an exemplary embodiment, region 422 can represent a region in which fluoride ions have been implanted, region 424 can represent a region in which carbon ions have been implanted, and region 426 can represent a planted region. Into the ion-deleted region (ie, the ultra-shallow junction region). According to an exemplary embodiment, each of the regions 422, 424, and 426 are formed simultaneously. According to another exemplary embodiment, one of the regions is The other two regions are formed before (for example, the region 422 is doped with a depleted ion, and the rear regions 424 and 426 are simultaneously formed by implanting a cluster molecule containing both carbon and a butterfly atom). Implant dopant species (eg, fluorine and carbon) can function during subsequent annealing step 350 to limit boron diffusion. It should be understood that the composition of the regions 422, 424, and 426 may vary with depth by 130168.doc 200903596 (eg, w γ ^ + degrees at region 426), and may be ambiguous in a given region; (4) High butterfly atoms are concentrated, and region 426 may contain implanted atoms of the type of the moon (such as carbon, fluorine, and stone ions). According to an exemplary embodiment, only a single type of substrate will be used. According to other exemplary specific in-line cluster molecules implanted in the same substrate: Α “More than one type of distribution curve. In addition, whether it will be single-type or-type above: == in the substrate' can also be implanted in individual steps Into other dopant species, added to the substrate with the !ST impurity type, and/or supplemented by cluster molecules, such as ch-xing-m... CH3 milk can be used as Source to provide anodic doping of the substrate and/or to supplement the carbon doping provided by the cluster molecules. The particular type of cluster molecule used can be selected based on any factor 2 of the various factors. Acquisition, cost, ease of use, sub-β: into 'and other related factors. According to various exemplary embodiments, the knife can be in the form of a gas (eg 'BF2CH3; heart (4) and package 2: there is between 1 a functional group of up to 4 carbon atoms (for example, a derivative of a substituted or emulsified milk atom); a liquid form of a liquid at room temperature (for example, a charcoal-baked (1,2-C2Bl〇Hl2) derivative' For example, including one or more of the following open bases: ^ Do 'Bu zero Can' and heart coffee Or a solid 7 formula (for example, a carbosilane molecule such as o-carbobane = other exemplary embodiments, the town molecule may be (10) or may have a ruthenium functional group; Or having a di(CH3)2 functional group; or 1,6-C2B8H10 (which may be alone or having a 16_(CH3)2 functional group). 130168.doc -22- 200903596 According to an exemplary embodiment, the cluster molecule may Provided in the form of a boric acid or a simple organoboron molecule such as boron quinone 8 曰 (an example of butyl MBK having the general formula B-(0-CH3) 3 ). Such molecules typically contain one boron atom per molecule and contain CB And COB bonding species. Some molecular systems are readily available and relatively inexpensive, however in some applications such molecules may not provide boron content suitable for achieving the characteristics required for ultra-shallow junctions. Examples of molecules include BF2CH3, cbo2h5, and c2bo2h8. According to still other exemplary embodiments, a boron hydride cluster can be used, for example, having the formula BxHy 'where 55x^96 and y^x + 8, as described, for example, in U.S. Patent Application Serial No. 1 1/041,558 (publication 2005/01) No. 63,693), the disclosure of which is incorporated herein by reference in its entirety (for example, 'B18H22). According to an exemplary embodiment, wherein a trimethyl borate type cluster molecule is implanted into the ruthenium substrate, optionally having The energy of the 蔟 molecule implanted between i and i 〇〇kev implants energy. This cluster implant will result in a special carbon implant energy between approximately 〇·11 5 ke V and 11.5 ke V and approximately 106 106 keV and 1 The equivalent implant energy between 0.6 keV, in which the implantation dose of carbon atoms is three times larger than the implantation dose of boron atoms. According to another exemplary embodiment, the cluster molecules may be provided in the form of a carborane of the formula CxByHz. Such molecules are relatively stable and readily available, and contain relatively low carbon content per molecule. Examples of such molecules include o-carbobane and its derivatives, available from Sigma-Aldrich of St. Louis, Missouri, and Strem Chemicals, Inc., of Newburyport, Massachusetts. Other examples include p- and m-carbobane and their derivatives, which are commercially available from the Czech Republic 130168.doc -23- 200903596

Katchem S.R.O. According to an exemplary embodiment, wherein a town molecule having the formula i, 2_ is implanted into a ruthenium substrate, implant energy having a value between about 1 and 1 〇〇 keV can be selected to obtain about 〇. The effective carbon energy in the substrate between 82 and 8 2 keV, and the effective boron energy in the substrate between about 0.075 and 75 keV, the implant dose of the rotten atom is 5 times larger than the implantation dose of the carbon atom. The hydrogen contained in the molecule diffuses out when implanted into the substrate.

According to other exemplary embodiments, the cluster molecules may be provided in the form of a carborane derivative, typically characterized by a lower melting point than conventional carboranes. Such a molecule comprises a primary carborane structure similar to that described above (eg, o--1⁄4 borane, and also a substituent attached to one or more substituted hydrogen atoms (eg, the derivative may be a gasified derivative, its towel) One or more hydrogen atoms may be substituted such that the carbon 'boron and fluorine atoms are each present in the cluster molecule.) Other potential substituents include a fluorine group (-Fx) and, for example: or a fluorination of m- or carbo-borane derivative). According to a specific embodiment, a destructive derivative having a general formula of carbon (tetra), 1-inter- _ CeHj, which has a bright point of about "degrees Celsius" can be used. It is understood that there may be a considerable number of combinations in accordance with various exemplary embodiments, all of which are contemplated to be within the scope of the present disclosure. According to other exemplary embodiments, cluster molecules may be small carbon stone burned 1, 2 -C2B4H6; 1,2-C2B5H7A1,2-C, 2B8Hig). According to the _*normetic case, the towel has a cluster molecule having the general formula '5 C2B3H5 implanted into the ruthenium substrate, optionally having about 1 and 130168.doc -24- 200903596 1 00 keV value of the implant energy, the right At 曰焱 in the m material is about 0.19 and 19 keV in the substrate between the effective stone 忐罝, and about 〇 1 energy, "Butterfly... Effectively delete 15 times between the substrate between 8 and 4). Into J, the dose of implants is larger than that of carbon atoms. The readers of this disclosure will understand that 'single-planting achieves some or all / k points in sputum/, implantation. The elimination of the implantation step can improve the productivity and efficiency compared to the sequential doping method. In addition, the effective implant energy per type decreases with the ratio of the molecular weight of the ruthenium. This thousand... This idea can achieve extremely low effective implant energy in extracting energy I from the helium molecule, which is extremely heavy for forming shallow joints. The more extracted energy system is advantageous for obtaining a higher extracted beam current, thereby further improving the productivity. Those of ordinary skill in the art will appreciate that the methods described in the various exemplary embodiments provide various advantages over conventional implant methods. For example, the method described herein provides a more efficient and (four) labor intensive implant for multiple implanted species' because the ion source is not required to be turned off, empty, and restarted between implant steps. Implantation of various dopant species described herein can provide a means to effectively reduce or eliminate undesirable de-spreading in the implanted substrate (and also the methods and types described herein to reduce or eliminate, for example, discs. The utility of other implanted dopant species is desired. When a range of values is provided in the description of the chemical section herein, it should be understood that the mediation values within the ranges and any other stated or intervening values are included. For example, the range of carbon numbers provided in the description of the corresponding chemical section herein should be understood as the number of each intervening carbon and any other statements or the number of intermediaries in the range 130168.doc, 25-200903596 is included in the It is revealed, for example, that the C1C6 hydrocarbyl group contains a ruthenium (inner, hexyl (6)), butyl (called, pentane 5) (called, ethyl (C2), propylene, and has a cup/pull" C6), and the chemical department, has any configuration, such as 'straight chain or branched chain of the present invention, t ^ step to understand 'in the U's dry can' within the specified carbon number range of carbon independently included in In the range of smaller carbon numbers, and the range in which a certain number of carbons are excluded, it is included in the present invention, and the exclusion of the specified range: or the sub-range of two carbon number restrictions is also included in the present invention. Explanation] /Important 'It should be noted that various exemplary specific examples described herein are intended to be illustrative only. Although only a few specific slaves are described in detail in this disclosure, the disclosure of this disclosure is familiar with this technique. Will be easy It will be appreciated that many modifications may be made without departing from the novel teachings and advantages of the invention. The order or sequence of any program or method steps may be varied or re-stated according to other exemplary embodiments. Other substitutions, modifications, changes and omissions may be made in the design, operation, and configuration of the various exemplary embodiments without departing from the scope of the invention as expressed in the appended claims. An assembly for a system for producing a semiconductor device in accordance with an exemplary embodiment. Figure 2 is a flow diagram illustrating steps in a method of forming a shallow junction in a semiconductor substrate in accordance with an exemplary embodiment. Figure 3 is a cross-sectional view of a portion of a semiconductor substrate in accordance with an exemplary embodiment. 130168.doc -26- 200903596 Figure 4 is a representation of the richness shown in Figure 3. , which illustrates the first dopant implantation step. FIG. 5 is a face-to-face diagram of the semi-conducting Qiu Ba & Second dopant implantation step. Figure 6 is a cross-sectional view of a portion of the semiconductor substrate shown in Figure 5 illustrating a third dopant implantation step. Figure 7 is a flow diagram illustrating another exemplary DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The steps in the method of forming a shallow junction in a semiconductor substrate. Figure 8 is a cross-sectional view of a portion of a semiconductor substrate in accordance with an exemplary embodiment. A cross-sectional view of a portion of the material illustrating the dopant implantation step. Figure 1 〇 to 12 illustrates various components of the ion source configured to transport unused cluster molecules into the semiconductor substrate. Explanation of main component symbols] 10 糸20 implanter 30 compartment 32 platform 40 magnet 50 gas box 52 sump 60 ion source 62 transfer line

130168.doc -27· 200903596 64 Ion Beam 200 Semiconductor Substrate or Wafer 202 Top Surface 210 Arrow 212 Arrow 214 Arrow 220 Region or Region 222 Region or Region 224 Doped Region 240 Junction 400 Semiconductor Substrate 402 Top Surface 410 Arrow 422 separation zone 424 separation zone 426 separation zone 130168.doc -28-

Claims (1)

200903596 X. Patent Application Range: 1 . A method for producing a doped region in a semiconductor substrate, comprising the step of implanting a first implantation step in which a carborane cluster molecule is implanted into a semiconductor substrate to form Doped area. 2. The method of claim 1, wherein the carborane cluster molecule has an ortho-borane molecule of the formula I,]. 3. The method of claim 1 wherein the (four) clustering molecule is selected from the group consisting of: 1,5_C2Bm(tetra)H6; 1,2_C2B5Hj 1,2-C2B8h丨〇. 4 _ such as the method of the month 1 item, wherein the carbon house is divided into + Sun ώ biology. 4 knives are adjacent to - Carbon Stone 衍 衍 5. =; The second method 'where - the street organism includes a method of fluorination breaking I =:: 1, which further comprises performing a second implantation step, the dopant species in the sputum Implanted into the semiconductor substrate. = Method of item 6 'The method of the dopant species and :::::6... The dopant species includes shouting. The method of 6, wherein the doping species is as described in claim 6 and comprises boron. The method of 呗6, wherein the second implant step gentleman ^ + value entry step comprises stealing the substrate with the carborane implanted in the first step. U.S. Patent No. 1, the method of claim 1, further comprising, " changing the inclusions and at least the second dopant to activate the -12. - An apparatus for forming a doped region of a semiconductor substrate, comprising: a substrate for holding a semiconductor substrate with 130168.doc 200903596, and for implanting a carborane cluster molecule into the semiconductor substrate to form a doped region The components. 13. The device of claim 12, wherein the carborane cluster molecule has an ortho-borane molecule of the formula. The apparatus of claim 12, wherein the carbon cluster molecule is selected from the group consisting of: 1,5-C2B3h5; ;i, 2_C2B4H6; and 1,2-C2BgH]〇. 15. The device of claim 12, wherein the carborane cluster molecule is an o-carbobane derivative. 16. A method for producing a semiconductor device having a shallow junction region, comprising: providing a first gas and a second gas in a trench, the first gas comprising a first dopant and the second gas comprising a second a dopant; implanting the first dopant into the semiconductor substrate using an ion source; and L = the ion source implanting the second dopant into the semiconductor substrate; The ion source is not turned off between the pusher and the step of implanting the second hand.如. The method of claim 16, wherein the at least one is a CH" milk body and the second gas: a method of length item 16, wherein the first gas and at least one of the systems are BF3. 19. The method of claim 16, further comprising: implanting the second dopant with & implanting the ion source into the semiconductor substrate, the 4 impurity and implanting the same Between the steps of the three dopants 130168.doc 200903596 2021.22. 23. 24. 25. 26. 27. 28. 29. The ion source is not turned off. • The method of claim 19, wherein the gas and the first _ $ ^ φ ^ > the debris system is included in at least one of the first Czochralski-rolling body. The method of claim 19, wherein the impurity is fluorine, and the ^r _A 》Milk carbon The second erbium-doped and lanthanide-doped system is boron. The method of claim 19, wherein a dopant and a 兮篦-" impurity system are implanted into the first object and the third In the case of the object of claim 16, the method of claim 16 is further characterized in that the step U is a small depth, and the third gas is provided in the storage tank having the first gas and the first emulsion.The method of claim 23, wherein the first second gas is the source gas of the gas produced by the system, the fluorine source gas of the system A, and the body. The younger gas system boron source gas: claim The method of 23, wherein at least one of the first gas and the third gas is a source of a dopant species selected from the group consisting of phosphorus and arsenic. The method of claim 16, wherein the first dopant is a fluorine dopant, boron, a gas, and the indium and antimony. The second and second method of claim 16, wherein the first device & /, "the younger dopant and the second dopant are - are fluorine, and the first The dopant and the second dopant are further boron. As in the method of claim 16, the method further comprises: annealing the dopant and at least the second dopant to activate The first to form a shallow junction 130168.doc 200903596 ' wherein at least one of the first dopant and the second dopant functions To limit the diffusion of boron. I30168.doc 4-