JP2013510424A - イメージセンサーのための最適化された光導波路アレイ - Google Patents

イメージセンサーのための最適化された光導波路アレイ Download PDF

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Publication number
JP2013510424A
JP2013510424A JP2012536009A JP2012536009A JP2013510424A JP 2013510424 A JP2013510424 A JP 2013510424A JP 2012536009 A JP2012536009 A JP 2012536009A JP 2012536009 A JP2012536009 A JP 2012536009A JP 2013510424 A JP2013510424 A JP 2013510424A
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Japan
Prior art keywords
pixels
optical waveguide
pixel
image sensor
gap
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JP2012536009A
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Japanese (ja)
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JP2013510424A5 (enExample
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ナム タイ，ヒョク
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Publication of JP2013510424A publication Critical patent/JP2013510424A/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
JP2012536009A 2009-11-05 2010-11-05 イメージセンサーのための最適化された光導波路アレイ Pending JP2013510424A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US25858109P 2009-11-05 2009-11-05
US61/258,581 2009-11-05
US25918009P 2009-11-08 2009-11-08
US61/259,180 2009-11-08
PCT/IB2010/055049 WO2011055344A1 (en) 2009-11-05 2010-11-05 Optimized light guide array for an image sensor

Publications (2)

Publication Number Publication Date
JP2013510424A true JP2013510424A (ja) 2013-03-21
JP2013510424A5 JP2013510424A5 (enExample) 2014-01-09

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JP2012536009A Pending JP2013510424A (ja) 2009-11-05 2010-11-05 イメージセンサーのための最適化された光導波路アレイ

Country Status (10)

Country Link
US (2) US8228408B2 (enExample)
JP (1) JP2013510424A (enExample)
CN (1) CN102549750A (enExample)
AU (1) AU2010316634A1 (enExample)
BR (1) BR112012010619A2 (enExample)
DE (1) DE112010004288T5 (enExample)
GB (1) GB2484225B (enExample)
MX (1) MX2012005169A (enExample)
SG (1) SG179551A1 (enExample)
WO (1) WO2011055344A1 (enExample)

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KR20160072513A (ko) * 2014-12-15 2016-06-23 에스케이하이닉스 주식회사 이미지 센서 및 그 제조방법
JP2021180299A (ja) * 2020-05-12 2021-11-18 采▲ぎょく▼科技股▲ふん▼有限公司VisEra Technologies Company Limited 固体撮像素子
WO2022138901A1 (ja) * 2020-12-25 2022-06-30 株式会社 Rosnes 撮像装置、または撮像装置を備えた電子機器
KR20220105103A (ko) * 2021-01-19 2022-07-26 비스에라 테크놀러지스 컴퍼니 리미티드 이미지 센서

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JP2010283145A (ja) * 2009-06-04 2010-12-16 Sony Corp 固体撮像素子及びその製造方法、電子機器
CN102893400B (zh) * 2010-05-14 2015-04-22 松下电器产业株式会社 固体摄像装置及其制造方法
KR101131977B1 (ko) * 2011-04-26 2012-03-29 (주)켐리치 배터리 커버에 발광장치가 구비된 휴대폰
US9373732B2 (en) * 2012-02-07 2016-06-21 Semiconductor Components Industries, Llc Image sensors with reflective optical cavity pixels
JP6308717B2 (ja) * 2012-10-16 2018-04-11 キヤノン株式会社 固体撮像装置、固体撮像装置の製造方法、および撮像システム
JP6500442B2 (ja) * 2014-02-28 2019-04-17 住友電気工業株式会社 アレイ型受光素子
JP6173259B2 (ja) * 2014-06-02 2017-08-02 キヤノン株式会社 光電変換装置および撮像システム
JP6444066B2 (ja) 2014-06-02 2018-12-26 キヤノン株式会社 光電変換装置および撮像システム
KR102667702B1 (ko) * 2016-12-06 2024-05-22 삼성전자주식회사 백 라이트 장치, 이를 포함하는 디스플레이 장치 및 그 제어 방법
JP6929057B2 (ja) * 2016-12-27 2021-09-01 キヤノン株式会社 光電変換素子、撮像システム
KR102816650B1 (ko) * 2016-12-29 2025-06-04 삼성디스플레이 주식회사 색변환 표시판 및 이를 포함하는 표시 장치
JP6949563B2 (ja) * 2017-06-02 2021-10-13 キヤノン株式会社 固体撮像装置、撮像システム及び移動体
KR102506837B1 (ko) * 2017-11-20 2023-03-06 삼성전자주식회사 이미지 센서 및 그 제조 방법
CN108281447A (zh) * 2018-01-30 2018-07-13 德淮半导体有限公司 半导体装置及其制作方法
CN109817653A (zh) * 2019-02-14 2019-05-28 德淮半导体有限公司 图像传感器及其形成方法
JP7336206B2 (ja) * 2019-02-27 2023-08-31 キヤノン株式会社 光電変換装置の製造方法
US10686000B1 (en) * 2019-04-12 2020-06-16 Visera Technologies Company Limited Solid-state imaging device
CN110649057B (zh) * 2019-09-30 2021-03-05 Oppo广东移动通信有限公司 图像传感器、摄像头组件及移动终端
CN114008782A (zh) 2019-09-30 2022-02-01 Oppo广东移动通信有限公司 图像传感器、摄像头组件及移动终端
CN114041208A (zh) 2019-09-30 2022-02-11 Oppo广东移动通信有限公司 图像传感器、摄像头组件及移动终端
JP7198250B2 (ja) * 2020-10-12 2022-12-28 キヤノン株式会社 表示装置
KR102650663B1 (ko) * 2021-09-15 2024-03-25 삼성전자주식회사 이미지 센서 및 이를 포함하는 전자 장치

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JP2006344754A (ja) * 2005-06-08 2006-12-21 Matsushita Electric Ind Co Ltd 固体撮像装置及びその製造方法
JP2008078258A (ja) * 2006-09-20 2008-04-03 Sharp Corp 固体撮像装置
US20090166518A1 (en) * 2007-12-28 2009-07-02 Hiok-Nam Tay Light guide array for an image sensor
JP2011029379A (ja) * 2009-07-24 2011-02-10 Sony Corp 固体撮像装置とその製造方法並びにカメラ

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US7001795B2 (en) * 2003-02-27 2006-02-21 Micron Technology, Inc. Total internal reflection (TIR) CMOS imager
US20050274871A1 (en) * 2004-06-10 2005-12-15 Jin Li Method and apparatus for collecting photons in a solid state imaging sensor
JP2007005629A (ja) * 2005-06-24 2007-01-11 Matsushita Electric Ind Co Ltd 固体撮像装置
JP4445528B2 (ja) * 2007-07-11 2010-04-07 住友重機械工業株式会社 静圧軸受
JP5164509B2 (ja) * 2007-10-03 2013-03-21 キヤノン株式会社 光電変換装置、可視光用光電変換装置及びそれらを用いた撮像システム
DE102007050167A1 (de) * 2007-10-19 2009-04-23 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Mikrolinsen-Array mit integrierter Beleuchtung
DE102008035090B4 (de) * 2008-07-28 2010-09-23 Airbus Deutschland Gmbh Flexibel einsetzbare Passagierkabinenbedieneinheit zur Steuerung von Kabinenfunktionen, Flugzeug damit und deren Verwendung
KR20100057302A (ko) * 2008-11-21 2010-05-31 삼성전자주식회사 이미지 센서 및 이의 제조 방법
JP2011243753A (ja) 2010-05-18 2011-12-01 Panasonic Corp 固体撮像装置

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JP2006344754A (ja) * 2005-06-08 2006-12-21 Matsushita Electric Ind Co Ltd 固体撮像装置及びその製造方法
JP2008078258A (ja) * 2006-09-20 2008-04-03 Sharp Corp 固体撮像装置
US20090166518A1 (en) * 2007-12-28 2009-07-02 Hiok-Nam Tay Light guide array for an image sensor
JP2011029379A (ja) * 2009-07-24 2011-02-10 Sony Corp 固体撮像装置とその製造方法並びにカメラ

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160072513A (ko) * 2014-12-15 2016-06-23 에스케이하이닉스 주식회사 이미지 센서 및 그 제조방법
KR102312964B1 (ko) * 2014-12-15 2021-10-15 에스케이하이닉스 주식회사 이미지 센서 및 그 제조방법
JP2021180299A (ja) * 2020-05-12 2021-11-18 采▲ぎょく▼科技股▲ふん▼有限公司VisEra Technologies Company Limited 固体撮像素子
JP7167114B2 (ja) 2020-05-12 2022-11-08 采▲ぎょく▼科技股▲ふん▼有限公司 固体撮像素子
US11569285B2 (en) 2020-05-12 2023-01-31 Visera Technologies Company Limited Solid-state imaging device having a waveguide partition grid with variable grid widths
WO2022138901A1 (ja) * 2020-12-25 2022-06-30 株式会社 Rosnes 撮像装置、または撮像装置を備えた電子機器
KR20220105103A (ko) * 2021-01-19 2022-07-26 비스에라 테크놀러지스 컴퍼니 리미티드 이미지 센서
JP2022111025A (ja) * 2021-01-19 2022-07-29 采▲ぎょく▼科技股▲ふん▼有限公司 イメージセンサ
JP7185732B2 (ja) 2021-01-19 2022-12-07 采▲ぎょく▼科技股▲ふん▼有限公司 イメージセンサ
KR102583561B1 (ko) * 2021-01-19 2023-10-05 비스에라 테크놀러지스 컴퍼니 리미티드 이미지 센서
US12295178B2 (en) 2021-01-19 2025-05-06 Visera Technologies Company Limited Image sensor

Also Published As

Publication number Publication date
US20110102651A1 (en) 2011-05-05
GB201200090D0 (en) 2012-02-15
GB2484225A (en) 2012-04-04
US8228408B2 (en) 2012-07-24
SG179551A1 (en) 2012-05-30
AU2010316634A1 (en) 2012-05-31
MX2012005169A (es) 2012-09-12
GB2484225B (en) 2014-09-03
WO2011055344A1 (en) 2011-05-12
DE112010004288T5 (de) 2013-01-03
CN102549750A (zh) 2012-07-04
US20120217377A1 (en) 2012-08-30
BR112012010619A2 (pt) 2017-08-15

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