AU2010316634A1 - Optimized light guide array for an image sensor - Google Patents

Optimized light guide array for an image sensor

Info

Publication number
AU2010316634A1
AU2010316634A1 AU2010316634A AU2010316634A AU2010316634A1 AU 2010316634 A1 AU2010316634 A1 AU 2010316634A1 AU 2010316634 A AU2010316634 A AU 2010316634A AU 2010316634 A AU2010316634 A AU 2010316634A AU 2010316634 A1 AU2010316634 A1 AU 2010316634A1
Authority
AU
Australia
Prior art keywords
pixels
pixel
light guide
gap
image sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2010316634A
Other languages
English (en)
Inventor
Hiok Nam Tay
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of AU2010316634A1 publication Critical patent/AU2010316634A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
AU2010316634A 2009-11-05 2010-11-05 Optimized light guide array for an image sensor Abandoned AU2010316634A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US25858109P 2009-11-05 2009-11-05
US61/258,581 2009-11-05
US25918009P 2009-11-08 2009-11-08
US61/259,180 2009-11-08
PCT/IB2010/055049 WO2011055344A1 (en) 2009-11-05 2010-11-05 Optimized light guide array for an image sensor

Publications (1)

Publication Number Publication Date
AU2010316634A1 true AU2010316634A1 (en) 2012-05-31

Family

ID=43513941

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2010316634A Abandoned AU2010316634A1 (en) 2009-11-05 2010-11-05 Optimized light guide array for an image sensor

Country Status (10)

Country Link
US (2) US8228408B2 (enExample)
JP (1) JP2013510424A (enExample)
CN (1) CN102549750A (enExample)
AU (1) AU2010316634A1 (enExample)
BR (1) BR112012010619A2 (enExample)
DE (1) DE112010004288T5 (enExample)
GB (1) GB2484225B (enExample)
MX (1) MX2012005169A (enExample)
SG (1) SG179551A1 (enExample)
WO (1) WO2011055344A1 (enExample)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010283145A (ja) * 2009-06-04 2010-12-16 Sony Corp 固体撮像素子及びその製造方法、電子機器
WO2011142065A1 (ja) * 2010-05-14 2011-11-17 パナソニック株式会社 固体撮像装置及びその製造方法
KR101131977B1 (ko) * 2011-04-26 2012-03-29 (주)켐리치 배터리 커버에 발광장치가 구비된 휴대폰
US9373732B2 (en) * 2012-02-07 2016-06-21 Semiconductor Components Industries, Llc Image sensors with reflective optical cavity pixels
JP6308717B2 (ja) * 2012-10-16 2018-04-11 キヤノン株式会社 固体撮像装置、固体撮像装置の製造方法、および撮像システム
JP6500442B2 (ja) * 2014-02-28 2019-04-17 住友電気工業株式会社 アレイ型受光素子
JP6444066B2 (ja) 2014-06-02 2018-12-26 キヤノン株式会社 光電変換装置および撮像システム
JP6173259B2 (ja) * 2014-06-02 2017-08-02 キヤノン株式会社 光電変換装置および撮像システム
KR102312964B1 (ko) * 2014-12-15 2021-10-15 에스케이하이닉스 주식회사 이미지 센서 및 그 제조방법
KR102667702B1 (ko) * 2016-12-06 2024-05-22 삼성전자주식회사 백 라이트 장치, 이를 포함하는 디스플레이 장치 및 그 제어 방법
JP6929057B2 (ja) * 2016-12-27 2021-09-01 キヤノン株式会社 光電変換素子、撮像システム
KR102816650B1 (ko) * 2016-12-29 2025-06-04 삼성디스플레이 주식회사 색변환 표시판 및 이를 포함하는 표시 장치
JP6949563B2 (ja) * 2017-06-02 2021-10-13 キヤノン株式会社 固体撮像装置、撮像システム及び移動体
KR102506837B1 (ko) * 2017-11-20 2023-03-06 삼성전자주식회사 이미지 센서 및 그 제조 방법
CN108281447A (zh) * 2018-01-30 2018-07-13 德淮半导体有限公司 半导体装置及其制作方法
CN109817653A (zh) * 2019-02-14 2019-05-28 德淮半导体有限公司 图像传感器及其形成方法
JP7336206B2 (ja) * 2019-02-27 2023-08-31 キヤノン株式会社 光電変換装置の製造方法
US10686000B1 (en) * 2019-04-12 2020-06-16 Visera Technologies Company Limited Solid-state imaging device
CN114008782A (zh) 2019-09-30 2022-02-01 Oppo广东移动通信有限公司 图像传感器、摄像头组件及移动终端
CN114041208A (zh) 2019-09-30 2022-02-11 Oppo广东移动通信有限公司 图像传感器、摄像头组件及移动终端
CN110649057B (zh) * 2019-09-30 2021-03-05 Oppo广东移动通信有限公司 图像传感器、摄像头组件及移动终端
US11569285B2 (en) * 2020-05-12 2023-01-31 Visera Technologies Company Limited Solid-state imaging device having a waveguide partition grid with variable grid widths
JP7198250B2 (ja) * 2020-10-12 2022-12-28 キヤノン株式会社 表示装置
WO2022138901A1 (ja) * 2020-12-25 2022-06-30 株式会社 Rosnes 撮像装置、または撮像装置を備えた電子機器
US12295178B2 (en) * 2021-01-19 2025-05-06 Visera Technologies Company Limited Image sensor
KR102650663B1 (ko) * 2021-09-15 2024-03-25 삼성전자주식회사 이미지 센서 및 이를 포함하는 전자 장치

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040031862A (ko) * 2002-10-04 2004-04-14 (주)그래픽테크노재팬 생산성 및 감도가 향상된 이미지 센서
US7001795B2 (en) * 2003-02-27 2006-02-21 Micron Technology, Inc. Total internal reflection (TIR) CMOS imager
US20050274871A1 (en) * 2004-06-10 2005-12-15 Jin Li Method and apparatus for collecting photons in a solid state imaging sensor
JP2006344754A (ja) * 2005-06-08 2006-12-21 Matsushita Electric Ind Co Ltd 固体撮像装置及びその製造方法
JP2007005629A (ja) * 2005-06-24 2007-01-11 Matsushita Electric Ind Co Ltd 固体撮像装置
JP2008078258A (ja) * 2006-09-20 2008-04-03 Sharp Corp 固体撮像装置
JP4445528B2 (ja) * 2007-07-11 2010-04-07 住友重機械工業株式会社 静圧軸受
JP5164509B2 (ja) 2007-10-03 2013-03-21 キヤノン株式会社 光電変換装置、可視光用光電変換装置及びそれらを用いた撮像システム
DE102007050167A1 (de) * 2007-10-19 2009-04-23 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Mikrolinsen-Array mit integrierter Beleuchtung
US7816641B2 (en) * 2007-12-28 2010-10-19 Candela Microsystems (S) Pte. Ltd. Light guide array for an image sensor
DE102008035090B4 (de) * 2008-07-28 2010-09-23 Airbus Deutschland Gmbh Flexibel einsetzbare Passagierkabinenbedieneinheit zur Steuerung von Kabinenfunktionen, Flugzeug damit und deren Verwendung
KR20100057302A (ko) * 2008-11-21 2010-05-31 삼성전자주식회사 이미지 센서 및 이의 제조 방법
JP5471117B2 (ja) * 2009-07-24 2014-04-16 ソニー株式会社 固体撮像装置とその製造方法並びにカメラ
JP2011243753A (ja) 2010-05-18 2011-12-01 Panasonic Corp 固体撮像装置

Also Published As

Publication number Publication date
GB2484225A (en) 2012-04-04
US20110102651A1 (en) 2011-05-05
US8228408B2 (en) 2012-07-24
BR112012010619A2 (pt) 2017-08-15
MX2012005169A (es) 2012-09-12
JP2013510424A (ja) 2013-03-21
GB201200090D0 (en) 2012-02-15
SG179551A1 (en) 2012-05-30
DE112010004288T5 (de) 2013-01-03
WO2011055344A1 (en) 2011-05-12
US20120217377A1 (en) 2012-08-30
GB2484225B (en) 2014-09-03
CN102549750A (zh) 2012-07-04

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Legal Events

Date Code Title Description
MK4 Application lapsed section 142(2)(d) - no continuation fee paid for the application