SG179551A1 - Optimized light guide array for an image sensor - Google Patents
Optimized light guide array for an image sensor Download PDFInfo
- Publication number
- SG179551A1 SG179551A1 SG2012000840A SG2012000840A SG179551A1 SG 179551 A1 SG179551 A1 SG 179551A1 SG 2012000840 A SG2012000840 A SG 2012000840A SG 2012000840 A SG2012000840 A SG 2012000840A SG 179551 A1 SG179551 A1 SG 179551A1
- Authority
- SG
- Singapore
- Prior art keywords
- pixels
- pixel
- gap
- image sensor
- light guide
- Prior art date
Links
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
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- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
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- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
- H10F39/026—Wafer-level processing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/805—Coatings
- H10F39/8053—Colour filters
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
- H10F39/8063—Microlenses
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US25858109P | 2009-11-05 | 2009-11-05 | |
| US25918009P | 2009-11-08 | 2009-11-08 | |
| PCT/IB2010/055049 WO2011055344A1 (en) | 2009-11-05 | 2010-11-05 | Optimized light guide array for an image sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG179551A1 true SG179551A1 (en) | 2012-05-30 |
Family
ID=43513941
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG2012000840A SG179551A1 (en) | 2009-11-05 | 2010-11-05 | Optimized light guide array for an image sensor |
Country Status (10)
| Country | Link |
|---|---|
| US (2) | US8228408B2 (enExample) |
| JP (1) | JP2013510424A (enExample) |
| CN (1) | CN102549750A (enExample) |
| AU (1) | AU2010316634A1 (enExample) |
| BR (1) | BR112012010619A2 (enExample) |
| DE (1) | DE112010004288T5 (enExample) |
| GB (1) | GB2484225B (enExample) |
| MX (1) | MX2012005169A (enExample) |
| SG (1) | SG179551A1 (enExample) |
| WO (1) | WO2011055344A1 (enExample) |
Families Citing this family (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010283145A (ja) * | 2009-06-04 | 2010-12-16 | Sony Corp | 固体撮像素子及びその製造方法、電子機器 |
| WO2011142065A1 (ja) * | 2010-05-14 | 2011-11-17 | パナソニック株式会社 | 固体撮像装置及びその製造方法 |
| KR101131977B1 (ko) * | 2011-04-26 | 2012-03-29 | (주)켐리치 | 배터리 커버에 발광장치가 구비된 휴대폰 |
| US9373732B2 (en) * | 2012-02-07 | 2016-06-21 | Semiconductor Components Industries, Llc | Image sensors with reflective optical cavity pixels |
| JP6308717B2 (ja) * | 2012-10-16 | 2018-04-11 | キヤノン株式会社 | 固体撮像装置、固体撮像装置の製造方法、および撮像システム |
| JP6500442B2 (ja) * | 2014-02-28 | 2019-04-17 | 住友電気工業株式会社 | アレイ型受光素子 |
| JP6444066B2 (ja) | 2014-06-02 | 2018-12-26 | キヤノン株式会社 | 光電変換装置および撮像システム |
| JP6173259B2 (ja) * | 2014-06-02 | 2017-08-02 | キヤノン株式会社 | 光電変換装置および撮像システム |
| KR102312964B1 (ko) * | 2014-12-15 | 2021-10-15 | 에스케이하이닉스 주식회사 | 이미지 센서 및 그 제조방법 |
| KR102667702B1 (ko) * | 2016-12-06 | 2024-05-22 | 삼성전자주식회사 | 백 라이트 장치, 이를 포함하는 디스플레이 장치 및 그 제어 방법 |
| JP6929057B2 (ja) * | 2016-12-27 | 2021-09-01 | キヤノン株式会社 | 光電変換素子、撮像システム |
| KR102816650B1 (ko) * | 2016-12-29 | 2025-06-04 | 삼성디스플레이 주식회사 | 색변환 표시판 및 이를 포함하는 표시 장치 |
| JP6949563B2 (ja) * | 2017-06-02 | 2021-10-13 | キヤノン株式会社 | 固体撮像装置、撮像システム及び移動体 |
| KR102506837B1 (ko) * | 2017-11-20 | 2023-03-06 | 삼성전자주식회사 | 이미지 센서 및 그 제조 방법 |
| CN108281447A (zh) * | 2018-01-30 | 2018-07-13 | 德淮半导体有限公司 | 半导体装置及其制作方法 |
| CN109817653A (zh) * | 2019-02-14 | 2019-05-28 | 德淮半导体有限公司 | 图像传感器及其形成方法 |
| JP7336206B2 (ja) * | 2019-02-27 | 2023-08-31 | キヤノン株式会社 | 光電変換装置の製造方法 |
| US10686000B1 (en) * | 2019-04-12 | 2020-06-16 | Visera Technologies Company Limited | Solid-state imaging device |
| CN114008782A (zh) | 2019-09-30 | 2022-02-01 | Oppo广东移动通信有限公司 | 图像传感器、摄像头组件及移动终端 |
| CN114041208A (zh) | 2019-09-30 | 2022-02-11 | Oppo广东移动通信有限公司 | 图像传感器、摄像头组件及移动终端 |
| CN110649057B (zh) * | 2019-09-30 | 2021-03-05 | Oppo广东移动通信有限公司 | 图像传感器、摄像头组件及移动终端 |
| US11569285B2 (en) * | 2020-05-12 | 2023-01-31 | Visera Technologies Company Limited | Solid-state imaging device having a waveguide partition grid with variable grid widths |
| JP7198250B2 (ja) * | 2020-10-12 | 2022-12-28 | キヤノン株式会社 | 表示装置 |
| WO2022138901A1 (ja) * | 2020-12-25 | 2022-06-30 | 株式会社 Rosnes | 撮像装置、または撮像装置を備えた電子機器 |
| US12295178B2 (en) * | 2021-01-19 | 2025-05-06 | Visera Technologies Company Limited | Image sensor |
| KR102650663B1 (ko) * | 2021-09-15 | 2024-03-25 | 삼성전자주식회사 | 이미지 센서 및 이를 포함하는 전자 장치 |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20040031862A (ko) * | 2002-10-04 | 2004-04-14 | (주)그래픽테크노재팬 | 생산성 및 감도가 향상된 이미지 센서 |
| US7001795B2 (en) * | 2003-02-27 | 2006-02-21 | Micron Technology, Inc. | Total internal reflection (TIR) CMOS imager |
| US20050274871A1 (en) * | 2004-06-10 | 2005-12-15 | Jin Li | Method and apparatus for collecting photons in a solid state imaging sensor |
| JP2006344754A (ja) * | 2005-06-08 | 2006-12-21 | Matsushita Electric Ind Co Ltd | 固体撮像装置及びその製造方法 |
| JP2007005629A (ja) * | 2005-06-24 | 2007-01-11 | Matsushita Electric Ind Co Ltd | 固体撮像装置 |
| JP2008078258A (ja) * | 2006-09-20 | 2008-04-03 | Sharp Corp | 固体撮像装置 |
| JP4445528B2 (ja) * | 2007-07-11 | 2010-04-07 | 住友重機械工業株式会社 | 静圧軸受 |
| JP5164509B2 (ja) | 2007-10-03 | 2013-03-21 | キヤノン株式会社 | 光電変換装置、可視光用光電変換装置及びそれらを用いた撮像システム |
| DE102007050167A1 (de) * | 2007-10-19 | 2009-04-23 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Mikrolinsen-Array mit integrierter Beleuchtung |
| US7816641B2 (en) * | 2007-12-28 | 2010-10-19 | Candela Microsystems (S) Pte. Ltd. | Light guide array for an image sensor |
| DE102008035090B4 (de) * | 2008-07-28 | 2010-09-23 | Airbus Deutschland Gmbh | Flexibel einsetzbare Passagierkabinenbedieneinheit zur Steuerung von Kabinenfunktionen, Flugzeug damit und deren Verwendung |
| KR20100057302A (ko) * | 2008-11-21 | 2010-05-31 | 삼성전자주식회사 | 이미지 센서 및 이의 제조 방법 |
| JP5471117B2 (ja) * | 2009-07-24 | 2014-04-16 | ソニー株式会社 | 固体撮像装置とその製造方法並びにカメラ |
| JP2011243753A (ja) | 2010-05-18 | 2011-12-01 | Panasonic Corp | 固体撮像装置 |
-
2010
- 2010-11-05 MX MX2012005169A patent/MX2012005169A/es active IP Right Grant
- 2010-11-05 WO PCT/IB2010/055049 patent/WO2011055344A1/en not_active Ceased
- 2010-11-05 BR BR112012010619A patent/BR112012010619A2/pt not_active IP Right Cessation
- 2010-11-05 DE DE112010004288T patent/DE112010004288T5/de not_active Withdrawn
- 2010-11-05 GB GB1200090.7A patent/GB2484225B/en not_active Expired - Fee Related
- 2010-11-05 US US12/941,004 patent/US8228408B2/en not_active Expired - Fee Related
- 2010-11-05 JP JP2012536009A patent/JP2013510424A/ja active Pending
- 2010-11-05 AU AU2010316634A patent/AU2010316634A1/en not_active Abandoned
- 2010-11-05 CN CN2010800418898A patent/CN102549750A/zh active Pending
- 2010-11-05 SG SG2012000840A patent/SG179551A1/en unknown
-
2012
- 2012-05-05 US US13/464,955 patent/US20120217377A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| GB2484225A (en) | 2012-04-04 |
| US20110102651A1 (en) | 2011-05-05 |
| US8228408B2 (en) | 2012-07-24 |
| BR112012010619A2 (pt) | 2017-08-15 |
| MX2012005169A (es) | 2012-09-12 |
| JP2013510424A (ja) | 2013-03-21 |
| GB201200090D0 (en) | 2012-02-15 |
| AU2010316634A1 (en) | 2012-05-31 |
| DE112010004288T5 (de) | 2013-01-03 |
| WO2011055344A1 (en) | 2011-05-12 |
| US20120217377A1 (en) | 2012-08-30 |
| GB2484225B (en) | 2014-09-03 |
| CN102549750A (zh) | 2012-07-04 |
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