GB2484225B - Optimized light guide array for an image sensor - Google Patents

Optimized light guide array for an image sensor

Info

Publication number
GB2484225B
GB2484225B GB1200090.7A GB201200090A GB2484225B GB 2484225 B GB2484225 B GB 2484225B GB 201200090 A GB201200090 A GB 201200090A GB 2484225 B GB2484225 B GB 2484225B
Authority
GB
United Kingdom
Prior art keywords
light guide
image sensor
guide array
optimized light
optimized
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB1200090.7A
Other languages
English (en)
Other versions
GB2484225A (en
GB201200090D0 (en
Inventor
Hiok Nam Tay
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of GB201200090D0 publication Critical patent/GB201200090D0/en
Publication of GB2484225A publication Critical patent/GB2484225A/en
Application granted granted Critical
Publication of GB2484225B publication Critical patent/GB2484225B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
GB1200090.7A 2009-11-05 2010-11-05 Optimized light guide array for an image sensor Expired - Fee Related GB2484225B (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US25858109P 2009-11-05 2009-11-05
US25918009P 2009-11-08 2009-11-08
PCT/IB2010/055049 WO2011055344A1 (en) 2009-11-05 2010-11-05 Optimized light guide array for an image sensor

Publications (3)

Publication Number Publication Date
GB201200090D0 GB201200090D0 (en) 2012-02-15
GB2484225A GB2484225A (en) 2012-04-04
GB2484225B true GB2484225B (en) 2014-09-03

Family

ID=43513941

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1200090.7A Expired - Fee Related GB2484225B (en) 2009-11-05 2010-11-05 Optimized light guide array for an image sensor

Country Status (10)

Country Link
US (2) US8228408B2 (enExample)
JP (1) JP2013510424A (enExample)
CN (1) CN102549750A (enExample)
AU (1) AU2010316634A1 (enExample)
BR (1) BR112012010619A2 (enExample)
DE (1) DE112010004288T5 (enExample)
GB (1) GB2484225B (enExample)
MX (1) MX2012005169A (enExample)
SG (1) SG179551A1 (enExample)
WO (1) WO2011055344A1 (enExample)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010283145A (ja) * 2009-06-04 2010-12-16 Sony Corp 固体撮像素子及びその製造方法、電子機器
WO2011142065A1 (ja) * 2010-05-14 2011-11-17 パナソニック株式会社 固体撮像装置及びその製造方法
KR101131977B1 (ko) * 2011-04-26 2012-03-29 (주)켐리치 배터리 커버에 발광장치가 구비된 휴대폰
US9373732B2 (en) * 2012-02-07 2016-06-21 Semiconductor Components Industries, Llc Image sensors with reflective optical cavity pixels
JP6308717B2 (ja) * 2012-10-16 2018-04-11 キヤノン株式会社 固体撮像装置、固体撮像装置の製造方法、および撮像システム
JP6500442B2 (ja) * 2014-02-28 2019-04-17 住友電気工業株式会社 アレイ型受光素子
JP6444066B2 (ja) 2014-06-02 2018-12-26 キヤノン株式会社 光電変換装置および撮像システム
JP6173259B2 (ja) * 2014-06-02 2017-08-02 キヤノン株式会社 光電変換装置および撮像システム
KR102312964B1 (ko) * 2014-12-15 2021-10-15 에스케이하이닉스 주식회사 이미지 센서 및 그 제조방법
KR102667702B1 (ko) * 2016-12-06 2024-05-22 삼성전자주식회사 백 라이트 장치, 이를 포함하는 디스플레이 장치 및 그 제어 방법
JP6929057B2 (ja) * 2016-12-27 2021-09-01 キヤノン株式会社 光電変換素子、撮像システム
KR102816650B1 (ko) * 2016-12-29 2025-06-04 삼성디스플레이 주식회사 색변환 표시판 및 이를 포함하는 표시 장치
JP6949563B2 (ja) * 2017-06-02 2021-10-13 キヤノン株式会社 固体撮像装置、撮像システム及び移動体
KR102506837B1 (ko) * 2017-11-20 2023-03-06 삼성전자주식회사 이미지 센서 및 그 제조 방법
CN108281447A (zh) * 2018-01-30 2018-07-13 德淮半导体有限公司 半导体装置及其制作方法
CN109817653A (zh) * 2019-02-14 2019-05-28 德淮半导体有限公司 图像传感器及其形成方法
JP7336206B2 (ja) * 2019-02-27 2023-08-31 キヤノン株式会社 光電変換装置の製造方法
US10686000B1 (en) * 2019-04-12 2020-06-16 Visera Technologies Company Limited Solid-state imaging device
CN114008782A (zh) 2019-09-30 2022-02-01 Oppo广东移动通信有限公司 图像传感器、摄像头组件及移动终端
CN114041208A (zh) 2019-09-30 2022-02-11 Oppo广东移动通信有限公司 图像传感器、摄像头组件及移动终端
CN110649057B (zh) * 2019-09-30 2021-03-05 Oppo广东移动通信有限公司 图像传感器、摄像头组件及移动终端
US11569285B2 (en) * 2020-05-12 2023-01-31 Visera Technologies Company Limited Solid-state imaging device having a waveguide partition grid with variable grid widths
JP7198250B2 (ja) * 2020-10-12 2022-12-28 キヤノン株式会社 表示装置
WO2022138901A1 (ja) * 2020-12-25 2022-06-30 株式会社 Rosnes 撮像装置、または撮像装置を備えた電子機器
US12295178B2 (en) * 2021-01-19 2025-05-06 Visera Technologies Company Limited Image sensor
KR102650663B1 (ko) * 2021-09-15 2024-03-25 삼성전자주식회사 이미지 센서 및 이를 포함하는 전자 장치

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009044924A1 (en) * 2007-10-03 2009-04-09 Canon Kabushiki Kaisha Photoelectric conversion device and imaging system
US20090166518A1 (en) * 2007-12-28 2009-07-02 Hiok-Nam Tay Light guide array for an image sensor

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040031862A (ko) * 2002-10-04 2004-04-14 (주)그래픽테크노재팬 생산성 및 감도가 향상된 이미지 센서
US7001795B2 (en) * 2003-02-27 2006-02-21 Micron Technology, Inc. Total internal reflection (TIR) CMOS imager
US20050274871A1 (en) * 2004-06-10 2005-12-15 Jin Li Method and apparatus for collecting photons in a solid state imaging sensor
JP2006344754A (ja) * 2005-06-08 2006-12-21 Matsushita Electric Ind Co Ltd 固体撮像装置及びその製造方法
JP2007005629A (ja) * 2005-06-24 2007-01-11 Matsushita Electric Ind Co Ltd 固体撮像装置
JP2008078258A (ja) * 2006-09-20 2008-04-03 Sharp Corp 固体撮像装置
JP4445528B2 (ja) * 2007-07-11 2010-04-07 住友重機械工業株式会社 静圧軸受
DE102007050167A1 (de) * 2007-10-19 2009-04-23 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Mikrolinsen-Array mit integrierter Beleuchtung
DE102008035090B4 (de) * 2008-07-28 2010-09-23 Airbus Deutschland Gmbh Flexibel einsetzbare Passagierkabinenbedieneinheit zur Steuerung von Kabinenfunktionen, Flugzeug damit und deren Verwendung
KR20100057302A (ko) * 2008-11-21 2010-05-31 삼성전자주식회사 이미지 센서 및 이의 제조 방법
JP5471117B2 (ja) * 2009-07-24 2014-04-16 ソニー株式会社 固体撮像装置とその製造方法並びにカメラ
JP2011243753A (ja) 2010-05-18 2011-12-01 Panasonic Corp 固体撮像装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009044924A1 (en) * 2007-10-03 2009-04-09 Canon Kabushiki Kaisha Photoelectric conversion device and imaging system
US20090166518A1 (en) * 2007-12-28 2009-07-02 Hiok-Nam Tay Light guide array for an image sensor

Also Published As

Publication number Publication date
GB2484225A (en) 2012-04-04
US20110102651A1 (en) 2011-05-05
US8228408B2 (en) 2012-07-24
BR112012010619A2 (pt) 2017-08-15
MX2012005169A (es) 2012-09-12
JP2013510424A (ja) 2013-03-21
GB201200090D0 (en) 2012-02-15
SG179551A1 (en) 2012-05-30
AU2010316634A1 (en) 2012-05-31
DE112010004288T5 (de) 2013-01-03
WO2011055344A1 (en) 2011-05-12
US20120217377A1 (en) 2012-08-30
CN102549750A (zh) 2012-07-04

Similar Documents

Publication Publication Date Title
GB2484225B (en) Optimized light guide array for an image sensor
GB2488468B (en) Light guide array for an image sensor
GB2516780B (en) Apparatus for optical sensing
GB0902569D0 (en) An optical device
GB0919742D0 (en) Optical sensor
GB0920434D0 (en) Image sensor arrays
IL198719A0 (en) Optical imaging system
EP2518472A4 (en) Optical image measurement device
GB2464562B (en) Optical Sensor Array
TWI369893B (en) Image detecting module
GB2481651B (en) Light guide array for an image sensor
HK1171567B (en) Light guide array for an image sensor
HK1175303B (en) Light guide array for an image sensor
HK1175304B (en) Light guide array for an image sensor
HK1171865B (en) Light guide array for an image sensor
HK1171865A1 (en) Light guide array for an image sensor
HK1171569B (en) Light guide array for an image sensor
HK1171568B (en) Light guide array for an image sensor
HK1171566B (en) Light guide array for an image sensor
TWM373078U (en) Linear light source for CCD image sensor module
GB0908990D0 (en) Optical sensor
GB0913401D0 (en) Optical sensor
GB0912051D0 (en) Optical sensor
TWM370749U (en) Laser optical sensor

Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20161105