JP2013254942A5 - - Google Patents

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Publication number
JP2013254942A5
JP2013254942A5 JP2013097234A JP2013097234A JP2013254942A5 JP 2013254942 A5 JP2013254942 A5 JP 2013254942A5 JP 2013097234 A JP2013097234 A JP 2013097234A JP 2013097234 A JP2013097234 A JP 2013097234A JP 2013254942 A5 JP2013254942 A5 JP 2013254942A5
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JP
Japan
Prior art keywords
contact
insulating film
conductive layer
oxide semiconductor
drain electrode
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Application number
JP2013097234A
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English (en)
Japanese (ja)
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JP2013254942A (ja
JP6077382B2 (ja
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Priority to JP2013097234A priority Critical patent/JP6077382B2/ja
Priority claimed from JP2013097234A external-priority patent/JP6077382B2/ja
Publication of JP2013254942A publication Critical patent/JP2013254942A/ja
Publication of JP2013254942A5 publication Critical patent/JP2013254942A5/ja
Application granted granted Critical
Publication of JP6077382B2 publication Critical patent/JP6077382B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2013097234A 2012-05-11 2013-05-06 半導体装置および半導体装置の作製方法 Expired - Fee Related JP6077382B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013097234A JP6077382B2 (ja) 2012-05-11 2013-05-06 半導体装置および半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012109762 2012-05-11
JP2012109762 2012-05-11
JP2013097234A JP6077382B2 (ja) 2012-05-11 2013-05-06 半導体装置および半導体装置の作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2017003571A Division JP6275294B2 (ja) 2012-05-11 2017-01-12 半導体装置

Publications (3)

Publication Number Publication Date
JP2013254942A JP2013254942A (ja) 2013-12-19
JP2013254942A5 true JP2013254942A5 (enExample) 2016-05-19
JP6077382B2 JP6077382B2 (ja) 2017-02-08

Family

ID=49952185

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2013097234A Expired - Fee Related JP6077382B2 (ja) 2012-05-11 2013-05-06 半導体装置および半導体装置の作製方法
JP2017003571A Expired - Fee Related JP6275294B2 (ja) 2012-05-11 2017-01-12 半導体装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2017003571A Expired - Fee Related JP6275294B2 (ja) 2012-05-11 2017-01-12 半導体装置

Country Status (1)

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JP (2) JP6077382B2 (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015114476A1 (en) * 2014-01-28 2015-08-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9443876B2 (en) 2014-02-05 2016-09-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic device including the semiconductor device, the display device, and the display module
WO2015121771A1 (en) 2014-02-14 2015-08-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
JP6486712B2 (ja) * 2014-04-30 2019-03-20 株式会社半導体エネルギー研究所 酸化物半導体膜
DE112014006711B4 (de) 2014-05-30 2021-01-21 Semiconductor Energy Laboratory Co., Ltd. Halbleitervorrichtung, Herstellungsverfahren dafür und elektronische Vorrichtung
KR102788207B1 (ko) 2015-04-13 2025-03-31 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
DE112015007226T5 (de) 2015-12-23 2018-09-13 Intel Corporation Fertigung von nicht-planaren IGZO-Vorrichtungen für eine verbesserte Elektrostatik
JP2020004861A (ja) 2018-06-28 2020-01-09 堺ディスプレイプロダクト株式会社 薄膜トランジスタ、表示装置及び薄膜トランジスタの製造方法
US11495689B2 (en) 2018-08-08 2022-11-08 Sakai Display Products Corporation Thin-film transistor and method for producing same
JP7262474B2 (ja) * 2018-10-26 2023-04-21 株式会社半導体エネルギー研究所 半導体装置
CN113875022B (zh) 2019-06-04 2024-05-14 堺显示器制品株式会社 薄膜晶体管及其制造方法以及显示装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5052033B2 (ja) * 2005-04-28 2012-10-17 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5168142B2 (ja) * 2006-05-17 2013-03-21 日本電気株式会社 半導体装置
KR102133478B1 (ko) * 2008-10-03 2020-07-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시장치
JP5587591B2 (ja) * 2008-11-07 2014-09-10 株式会社半導体エネルギー研究所 半導体装置
JP5587592B2 (ja) * 2008-11-07 2014-09-10 株式会社半導体エネルギー研究所 半導体装置
JP2010272571A (ja) * 2009-05-19 2010-12-02 Panasonic Corp 半導体装置及びその製造方法
EP2526622B1 (en) * 2010-01-20 2015-09-23 Semiconductor Energy Laboratory Co. Ltd. Semiconductor device
US8692243B2 (en) * 2010-04-20 2014-04-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
WO2011145467A1 (en) * 2010-05-21 2011-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2011155295A1 (en) * 2010-06-10 2011-12-15 Semiconductor Energy Laboratory Co., Ltd. Dc/dc converter, power supply circuit, and semiconductor device
JP5705559B2 (ja) * 2010-06-22 2015-04-22 ルネサスエレクトロニクス株式会社 半導体装置、及び、半導体装置の製造方法
US8871565B2 (en) * 2010-09-13 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device

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