JP6077382B2 - 半導体装置および半導体装置の作製方法 - Google Patents
半導体装置および半導体装置の作製方法 Download PDFInfo
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- JP6077382B2 JP6077382B2 JP2013097234A JP2013097234A JP6077382B2 JP 6077382 B2 JP6077382 B2 JP 6077382B2 JP 2013097234 A JP2013097234 A JP 2013097234A JP 2013097234 A JP2013097234 A JP 2013097234A JP 6077382 B2 JP6077382 B2 JP 6077382B2
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- oxide semiconductor
- insulating film
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- oxygen
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- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
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- Electrodes Of Semiconductors (AREA)
- Semiconductor Memories (AREA)
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- Thin Film Transistor (AREA)
- Electroluminescent Light Sources (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
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| WO2015114476A1 (en) * | 2014-01-28 | 2015-08-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US9443876B2 (en) * | 2014-02-05 | 2016-09-13 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, display device including the semiconductor device, display module including the display device, and electronic device including the semiconductor device, the display device, and the display module |
| US10290908B2 (en) | 2014-02-14 | 2019-05-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device |
| JP6486712B2 (ja) * | 2014-04-30 | 2019-03-20 | 株式会社半導体エネルギー研究所 | 酸化物半導体膜 |
| WO2015182000A1 (en) | 2014-05-30 | 2015-12-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, manufacturing method thereof, and electronic device |
| KR102546189B1 (ko) | 2015-04-13 | 2023-06-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| DE112015007226T5 (de) | 2015-12-23 | 2018-09-13 | Intel Corporation | Fertigung von nicht-planaren IGZO-Vorrichtungen für eine verbesserte Elektrostatik |
| JP2020004861A (ja) | 2018-06-28 | 2020-01-09 | 堺ディスプレイプロダクト株式会社 | 薄膜トランジスタ、表示装置及び薄膜トランジスタの製造方法 |
| WO2020031309A1 (ja) | 2018-08-08 | 2020-02-13 | 堺ディスプレイプロダクト株式会社 | 薄膜トランジスタおよびその製造方法 |
| CN112823415A (zh) * | 2018-10-26 | 2021-05-18 | 株式会社半导体能源研究所 | 半导体装置以及半导体装置的制造方法 |
| WO2020245925A1 (ja) | 2019-06-04 | 2020-12-10 | 堺ディスプレイプロダクト株式会社 | 薄膜トランジスタおよびその製造方法、ならびに表示装置 |
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| US8043957B2 (en) * | 2006-05-17 | 2011-10-25 | Nec Corporation | Semiconductor device, method for manufacturing semiconductor device and apparatus for manufacturing semiconductor |
| KR102133478B1 (ko) * | 2008-10-03 | 2020-07-13 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시장치 |
| JP5587591B2 (ja) * | 2008-11-07 | 2014-09-10 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP5587592B2 (ja) * | 2008-11-07 | 2014-09-10 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP2010272571A (ja) * | 2009-05-19 | 2010-12-02 | Panasonic Corp | 半導体装置及びその製造方法 |
| IN2012DN05920A (enExample) * | 2010-01-20 | 2015-09-18 | Semiconductor Energy Lab | |
| US8692243B2 (en) * | 2010-04-20 | 2014-04-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| KR101872927B1 (ko) * | 2010-05-21 | 2018-06-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| WO2011155295A1 (en) * | 2010-06-10 | 2011-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Dc/dc converter, power supply circuit, and semiconductor device |
| JP5705559B2 (ja) * | 2010-06-22 | 2015-04-22 | ルネサスエレクトロニクス株式会社 | 半導体装置、及び、半導体装置の製造方法 |
| US8871565B2 (en) * | 2010-09-13 | 2014-10-28 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
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| JP2013254942A (ja) | 2013-12-19 |
| JP6275294B2 (ja) | 2018-02-07 |
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