JP2013239605A - 半導体装置、及び半導体装置の製造方法 - Google Patents
半導体装置、及び半導体装置の製造方法 Download PDFInfo
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Abstract
【解決手段】ピエゾ分極を起こす半導体にて形成されたバッファ層と、前記バッファ層の上に積層されたチャネル層と、を備え、前記チャネル層においては、前記バッファ層のピエゾ分極により当該チャネル層に生じる2次元ホールガスをキャリアとする半導体装置。
【選択図】図1
Description
(1)半導体装置の第1実施形態の構成:
(2)半導体装置の第2実施形態の構成:
(3)第2実施形態に係る半導体装置の製造方法:
(4)まとめ:
図1は、第1実施形態に係る半導体装置100の断面構成の1例を示す図である。同図に示す半導体装置100は、化合物半導体系のp型チャネル電界効果トランジスタ(以下、pFETと略す)を含む半導体装置である。
次に、上述したpFETを用いた他の実施形態について説明する。上述したpFETを用いて好適な実施形態としては、例えば、コンプリメンタリインバータや、レベルシフトロジック等がある。以下説明する第2実施形態では、コンプリメンタリインバータに上述したpFETを用いた場合を例に取り説明を行う。
次に、図12〜図20を用いて第2実施形態に係る半導体装置100の製造方法を説明する。図12は、GaAs単結晶基板上にGaAs材料を主体とする各層を、例えば有機金属気相成長法(MOCVD)法によりエピタキシャル成長させた半導体装置100の積層構造を表す模式的な縦断面図である。
なお、以上のエピタキシャル成長は、温度約600℃により行う。
以上説明した半導体装置によれば、ピエゾ分極を起こす半導体にて形成されたバッファ層102と、バッファ層102の上に積層されたチャネル層103と、を備え、チャネル層103においては、バッファ層102のピエゾ分極によりチャネル層103に生じる2次元ホールガスをキャリアとしている。これにより、エピタキシャル基板を選択的にエッチングして作成するpチャネルFETにおけるキャリアの高移動度とゲートの低いオン抵抗を実現し、素子の高集積化を実現することができる。
前記バッファ層の上に積層されたチャネル層と、
を備え、
前記チャネル層においては、前記バッファ層のピエゾ分極により当該チャネル層に生じる2次元ホールガスをキャリアとする半導体装置。
これら複数の半導体層のうち、前記チャネル層に隣接して設けられる半導体層は、前記ピエゾ分極を起こす半導体で形成されている(1)〜(4)の何れか1項に記載の半導体装置。
前記バッファ層の半導体には、不純物がドープしてある(1)〜(6)の何れか1項に記載の半導体装置。
前記バッファ層と前記化合物半導体基板の間には、前記バッファ層の半導体と前記化合物半導体基板の半導体の双方に格子整合する半導体層であって、前記バッファ層の半導体と前記化合物半導体基板の半導体の双方とバンドギャップが異なる少なくとも1層の半導体層を積層してある(1)〜(7)の何れか1項に記載の半導体装置。
前記基部の上に、前記基部の化合物半導体と格子整合し且つピエゾ分極を起こす半導体を積層してバッファ層を形成する工程と、
前記バッファ層の上に、前記バッファ層の半導体と格子整合し且つ前記バッファ層のピエゾ分極により2次元ホールガスが発生する半導体を積層してチャネル層を形成する工程と、
前記チャネル層の上にゲートを形成する工程と、
前記チャネル層の上の前記ゲートを挟んだ両側にそれぞれドレイン及びソースを形成する工程と、
を含む、半導体装置の製造方法。
200…半導体装置、201…化合物半導体基板、202…第1バッファ層、203…第1障壁層、203a…第1キャリア供給層、203b…第1高抵抗層、204…第1チャネル層、205…第2障壁層、205a…第2高抵抗層、205b…第2キャリア供給層、206…ショットキー層、207…第2バッファ層、208…第2チャネル層、209…ゲートリーク防止層、210…n型第1ゲート層、211…n型第2ゲート層
220…p型ゲート領域、221…ソース電極、222…ドレイン電極、223…ゲート電極、224…開口部、225…開口部、226…開口部
230…開口部(第1領域の)、231…ソース電極、231…ドレイン電極、232…ソース領域、232…ドレイン領域、240…素子分離領域、250…n型ゲート領域、260…絶縁膜、265…保護膜、A1…第1領域、A2…第2領域、Ei…内部電界、Ev1…エネルギーレベル、Ev2…エネルギーレベル、Ev3…エネルギーレベル、K1…ヘテロ接合界面、K2…ヘテロ接合界面、P…三角ポテンシャル 、
Claims (15)
- ピエゾ分極を起こす半導体 にて形成されたバッファ層と、
前記バッファ層の上に積層されたチャネル層と、
を備え、
前記チャネル層においては、前記バッファ層のピエゾ分極により当該チャネル層に生じる2次元ホールガスをキャリアとする半導体装置 。 - 前記バッファ層においてピエゾ分極を起こす半導体は、InGaPである請求項1に記載の半導体装置。
- 前記チャネル層は、価電子帯のエネルギーレベルが前記バッファ層よりも高い半導体にて形成されている請求項1に記載の半導体装置。
- 前記チャネル層には、前記ピエゾ分極により前記バッファ層の厚さに応じた数の2次元ホールガスが発生する請求項1に記載の半導体装置。
- 前記バッファ層は、互いに格子整合する複数の半導体層にて形成されており、
これら複数の半導体層のうち、前記チャネル層に隣接して設けられる半導体層は、前記ピエゾ分極を起こす半導体で形成されている請求項1に記載の半導体装置。 - 前記チャネル層は、前記ピエゾ分極を起こす半導体と格子整合する半導体を1回以上積層して形成してある請求項1に記載の半導体装置。
- 前記チャネル層の半導体には、濃度が1×1017atoms/cm3 以下のC、Zn、又はBeを不純物としてドープしてあり、
前記バッファ層の半導体には、濃度が1×1012〜4×1018atoms/cm3のC、Zn、又はBeを不純物としてドープしてある請求項1に記載の半導体装置。 - 前記バッファ層は、化合物半導体基板の上に積層されており、
前記バッファ層と前記化合物半導体基板の間には、前記バッファ層の半導体と前記化合物半導体基板の半導体の双方に格子整合する半導体層であって、前記バッファ層の半導体と前記化合物半導体基板の半導体の双方とバンドギャップが異なる少なくとも1層の半導体層を積層してある請求項1に記載の半導体装置。 - 前記チャネル層の上に積層されたn型半導体により形成したゲートを備える請求項1に記載の半導体装置。
- 前記チャネル層にn型の不純物を拡散することにより形成したゲートを備える請求項1に記載の半導体装置。
- 前記チャネル層に接合されたショットキーメタルにより形成したゲートを備える請求項1に記載の半導体装置。
- 前記チャネル層上に積層したゲート酸化膜にショットキーメタルを接合して形成したゲートを備える請求項1に記載の半導体装置。
- 請求項1に記載の半導体装置とn型電界効果トランジスタを同じ化合物半導体基板上に形成した相補型半導体装置。
- 請求項1に記載の半導体装置を用いて作成されたレベルシフト回路。
- 化合物半導体の基部を形成する工程と、
前記基部の上に、前記基部の化合物半導体と格子整合し且つピエゾ分極を起こす半導体を積層してバッファ層を形成する工程と、
前記バッファ層の上に、前記バッファ層の半導体と格子整合し且つ前記バッファ層のピエゾ分極により2次元ホールガスが発生する半導体を積層してチャネル層を形成する工程と、
前記チャネル層の上にゲートを形成する工程と、
前記チャネル層の上の前記ゲートを挟んだ両側にそれぞれドレイン及びソースを形成する工程と、
を含む、半導体装置の製造方法。
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CN107078062B (zh) * | 2014-11-04 | 2020-09-18 | 索尼公司 | 半导体器件、天线开关电路和无线通信装置 |
KR102547562B1 (ko) * | 2015-11-02 | 2023-06-23 | 엔지케이 인슐레이터 엘티디 | 반도체 소자용 에피택셜 기판, 반도체 소자, 및 반도체 소자용 에피택셜 기판의 제조 방법 |
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CN109786498B (zh) * | 2018-12-10 | 2021-04-06 | 华南理工大学 | 一种基于二维半导体材料的红外探测元件及其制备方法 |
US11101378B2 (en) | 2019-04-09 | 2021-08-24 | Raytheon Company | Semiconductor structure having both enhancement mode group III-N high electron mobility transistors and depletion mode group III-N high electron mobility transistors |
US11349023B2 (en) * | 2019-10-01 | 2022-05-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Integration of p-channel and n-channel E-FET III-V devices without parasitic channels |
US11081485B2 (en) * | 2019-10-23 | 2021-08-03 | Win Semiconductors Corp. | Monolithic integrated circuit device having gate-sinking pHEMTs |
US11545566B2 (en) * | 2019-12-26 | 2023-01-03 | Raytheon Company | Gallium nitride high electron mobility transistors (HEMTs) having reduced current collapse and power added efficiency enhancement |
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