JP2013221883A - 試料分析素子および検出装置 - Google Patents

試料分析素子および検出装置 Download PDF

Info

Publication number
JP2013221883A
JP2013221883A JP2012094519A JP2012094519A JP2013221883A JP 2013221883 A JP2013221883 A JP 2013221883A JP 2012094519 A JP2012094519 A JP 2012094519A JP 2012094519 A JP2012094519 A JP 2012094519A JP 2013221883 A JP2013221883 A JP 2013221883A
Authority
JP
Japan
Prior art keywords
metal
sample analysis
light
wavelength
pitch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2012094519A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013221883A5 (enExample
Inventor
Mamoru Sugimoto
守 杉本
Atsushi Amako
淳 尼子
Hideaki Koike
秀明 小池
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP2012094519A priority Critical patent/JP2013221883A/ja
Priority to PCT/JP2013/002503 priority patent/WO2013157233A1/ja
Priority to CN201380020394.0A priority patent/CN104321639A/zh
Priority to EP13777779.3A priority patent/EP2840383A4/en
Priority to US14/395,243 priority patent/US9228944B2/en
Publication of JP2013221883A publication Critical patent/JP2013221883A/ja
Publication of JP2013221883A5 publication Critical patent/JP2013221883A5/ja
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/55—Specular reflectivity
    • G01N21/552—Attenuated total reflection
    • G01N21/553—Attenuated total reflection and using surface plasmons
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63—Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/65—Raman scattering
    • G01N21/658—Raman scattering enhancement Raman, e.g. surface plasmons
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/55—Specular reflectivity
    • G01N21/552—Attenuated total reflection
    • G01N21/553—Attenuated total reflection and using surface plasmons
    • G01N21/554—Attenuated total reflection and using surface plasmons detecting the surface plasmon resonance of nanostructured metals, e.g. localised surface plasmon resonance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/06—Illumination; Optics
    • G01N2201/061—Sources
    • G01N2201/06113—Coherent sources; lasers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/249921—Web or sheet containing structurally defined element or component

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Pathology (AREA)
  • General Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • Immunology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
JP2012094519A 2012-04-18 2012-04-18 試料分析素子および検出装置 Withdrawn JP2013221883A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2012094519A JP2013221883A (ja) 2012-04-18 2012-04-18 試料分析素子および検出装置
PCT/JP2013/002503 WO2013157233A1 (ja) 2012-04-18 2013-04-12 試料分析素子および検出装置
CN201380020394.0A CN104321639A (zh) 2012-04-18 2013-04-12 试样分析元件以及检测装置
EP13777779.3A EP2840383A4 (en) 2012-04-18 2013-04-12 Sample analysis element and detection device
US14/395,243 US9228944B2 (en) 2012-04-18 2013-04-12 Sample analysis element and detection device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012094519A JP2013221883A (ja) 2012-04-18 2012-04-18 試料分析素子および検出装置

Publications (2)

Publication Number Publication Date
JP2013221883A true JP2013221883A (ja) 2013-10-28
JP2013221883A5 JP2013221883A5 (enExample) 2015-06-11

Family

ID=49383205

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012094519A Withdrawn JP2013221883A (ja) 2012-04-18 2012-04-18 試料分析素子および検出装置

Country Status (5)

Country Link
US (1) US9228944B2 (enExample)
EP (1) EP2840383A4 (enExample)
JP (1) JP2013221883A (enExample)
CN (1) CN104321639A (enExample)
WO (1) WO2013157233A1 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015215178A (ja) * 2014-05-08 2015-12-03 セイコーエプソン株式会社 電場増強素子、分析装置及び電子機器
US9389178B2 (en) 2013-03-05 2016-07-12 Seiko Epson Corporation Analysis device, analysis method, optical element and electronic apparatus for analysis device and analysis method, and method of designing optical element
US9389179B2 (en) 2014-02-17 2016-07-12 Seiko Epson Corporation Analysis apparatus and electronic device
JP2017514148A (ja) * 2014-04-08 2017-06-01 インスプロリオン・センサー・システムズ・アーベー センサ付きバッテリ

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014097886A1 (ja) * 2012-12-18 2014-06-26 学校法人早稲田大学 光学デバイスおよび分析装置
JP2015055482A (ja) * 2013-09-10 2015-03-23 セイコーエプソン株式会社 分析装置、分析方法、これらに用いる光学素子及び電子機器
JP6613736B2 (ja) * 2015-09-07 2019-12-04 セイコーエプソン株式会社 物質検出方法および物質検出装置
DE102017105113B4 (de) 2017-03-10 2021-09-30 Leibniz-Institut für Photonische Technologien e.V. (Engl.Leibniz Institute of Photonic Technology) Anordnung und Verfahren für die Erfassung von Änderungen der optischen Weglänge in einem Nano-Kapillarkanal
US11959859B2 (en) * 2021-06-02 2024-04-16 Edwin Thomas Carlen Multi-gas detection system and method

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3452837B2 (ja) 1999-06-14 2003-10-06 理化学研究所 局在プラズモン共鳴センサー
JP4231701B2 (ja) 2002-01-08 2009-03-04 富士フイルム株式会社 プラズモン共鳴デバイス
US7079250B2 (en) 2002-01-08 2006-07-18 Fuji Photo Film Co., Ltd. Structure, structure manufacturing method and sensor using the same
JP3897703B2 (ja) 2002-01-11 2007-03-28 キヤノン株式会社 センサ装置およびそれを用いた検査方法
US7399445B2 (en) 2002-01-11 2008-07-15 Canon Kabushiki Kaisha Chemical sensor
US7088449B1 (en) 2002-11-08 2006-08-08 The Board Of Trustees Of The Leland Stanford Junior University Dimension measurement approach for metal-material
JP3957199B2 (ja) 2003-03-19 2007-08-15 富士フイルム株式会社 センサチップおよびセンサチップの製造方法並びにそのセンサチップを用いたセンサ
EP1445601A3 (en) 2003-01-30 2004-09-22 Fuji Photo Film Co., Ltd. Localized surface plasmon sensor chips, processes for producing the same, and sensors using the same
US7239076B2 (en) * 2003-09-25 2007-07-03 General Electric Company Self-aligned gated rod field emission device and associated method of fabrication
RU2361193C2 (ru) 2004-05-19 2009-07-10 Вп Холдинг, Ллс Оптический датчик с многослойной плазмонной структурой для усовершенствованного обнаружения химических групп посредством sers
JP4156567B2 (ja) * 2004-06-16 2008-09-24 日本電信電話株式会社 Ｓｐｒセンサーおよび屈折率測定方法
GB2419940B (en) 2004-11-04 2007-03-07 Mesophotonics Ltd Metal nano-void photonic crystal for enhanced raman spectroscopy
JP2006208057A (ja) 2005-01-25 2006-08-10 Taiyo Yuden Co Ltd プラズモン共鳴構造体，その制御方法，金属ドメイン製造方法
WO2007083817A1 (en) 2006-01-18 2007-07-26 Canon Kabushiki Kaisha Target substance-detecting element
JP2007218900A (ja) 2006-01-18 2007-08-30 Canon Inc 標的物質検出用の素子
JP2007240361A (ja) 2006-03-09 2007-09-20 Sekisui Chem Co Ltd 局在プラズモン増強センサ
JP4994682B2 (ja) 2006-03-16 2012-08-08 キヤノン株式会社 検知素子、該検知素子を用いた標的物質検知装置及び標的物質を検知する方法
JP5286515B2 (ja) 2006-05-11 2013-09-11 国立大学法人秋田大学 センサチップ及びセンサチップ製造方法
US8045141B2 (en) 2006-05-12 2011-10-25 Canon Kabushiki Kaisha Detecting element, detecting device and detecting method
JP2008025989A (ja) 2006-07-15 2008-02-07 Keio Gijuku 局在表面プラズモン共鳴法と質量分析法によるリガンドの分析方法及びそのためのセンサー素子
GB2447696A (en) 2007-03-23 2008-09-24 Univ Exeter Photonic biosensor arrays
WO2008136812A2 (en) 2007-05-07 2008-11-13 The Board Of Trustees Of The University Of Illinois Fluorescence detection enhancement using photonic crystal extraction
JP5116362B2 (ja) 2007-05-28 2013-01-09 株式会社リコー バイオセンサ
US7639355B2 (en) 2007-06-26 2009-12-29 Hewlett-Packard Development Company, L.P. Electric-field-enhancement structure and detection apparatus using same
JP5080186B2 (ja) 2007-09-26 2012-11-21 富士フイルム株式会社 分子分析光検出方法およびそれに用いられる分子分析光検出装置、並びにサンプルプレート
JP5294600B2 (ja) 2007-09-28 2013-09-18 キヤノン株式会社 標的物質検出装置、及び標的物質検出方法
JP5288772B2 (ja) * 2007-11-02 2013-09-11 キヤノン株式会社 化学センサ素子、センシング装置およびセンシング方法
JP5175584B2 (ja) 2008-03-13 2013-04-03 地方独立行政法人 東京都立産業技術研究センター 局所表面プラズモン共鳴イメージング装置
JP5396761B2 (ja) * 2008-07-11 2014-01-22 株式会社リコー 微小構造体と微小構造体を有する光制御素子
CN102227659B (zh) 2008-09-30 2014-12-24 加利福尼亚太平洋生物科学股份有限公司 超高多路分析系统和方法
JP2010256161A (ja) * 2009-04-24 2010-11-11 Konica Minolta Holdings Inc プラズモン励起センサおよびそれを用いたアッセイ法
US8259381B2 (en) * 2009-06-05 2012-09-04 Exelis Inc. Phase-change materials and optical limiting devices utilizing phase-change materials
JP5621394B2 (ja) 2009-11-19 2014-11-12 セイコーエプソン株式会社 センサーチップ、センサーカートリッジ及び分析装置
EP2325635B1 (en) 2009-11-19 2017-05-03 Seiko Epson Corporation Sensor chip, sensor cartridge, and analysis apparatus
JP5589656B2 (ja) 2009-12-11 2014-09-17 セイコーエプソン株式会社 センサーチップ、センサーカートリッジ及び分析装置
EP3943920B1 (en) 2010-02-19 2024-04-03 Pacific Biosciences Of California, Inc. Integrated analytical system and method for fluorescence measurement
EP2372348A1 (en) 2010-03-22 2011-10-05 Imec Methods and systems for surface enhanced optical detection
WO2012138915A1 (en) 2011-04-05 2012-10-11 Integrated Plasmonics Corporation Integrated plasmonic sensing device and apparatus
CN103930780B (zh) 2011-10-18 2016-01-20 惠普发展公司，有限责任合伙企业 分子传感装置

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9389178B2 (en) 2013-03-05 2016-07-12 Seiko Epson Corporation Analysis device, analysis method, optical element and electronic apparatus for analysis device and analysis method, and method of designing optical element
US9389179B2 (en) 2014-02-17 2016-07-12 Seiko Epson Corporation Analysis apparatus and electronic device
JP2017514148A (ja) * 2014-04-08 2017-06-01 インスプロリオン・センサー・システムズ・アーベー センサ付きバッテリ
JP2020098212A (ja) * 2014-04-08 2020-06-25 インスプロリオン・センサー・システムズ・アーベー センサ付きバッテリ
US10930983B2 (en) 2014-04-08 2021-02-23 Insplorion Sensor Systems Ab Battery with sensor
JP2015215178A (ja) * 2014-05-08 2015-12-03 セイコーエプソン株式会社 電場増強素子、分析装置及び電子機器
US9658165B2 (en) 2014-05-08 2017-05-23 Seiko Epson Corporation Electronic field enhancement element, analysis device, and electronic apparatus
US9880100B2 (en) 2014-05-08 2018-01-30 Seiko Epson Corporation Electronic field enhancement element, analysis device, and electronic apparatus

Also Published As

Publication number Publication date
CN104321639A (zh) 2015-01-28
EP2840383A1 (en) 2015-02-25
EP2840383A4 (en) 2015-11-18
US20150103347A1 (en) 2015-04-16
WO2013157233A1 (ja) 2013-10-24
US9228944B2 (en) 2016-01-05

Similar Documents

Publication Publication Date Title
JP2013221883A (ja) 試料分析素子および検出装置
JP5923992B2 (ja) 試料分析素子および検出装置
JP5880064B2 (ja) 試料分析素子および検出装置
US8836946B2 (en) Optical device and detection device
KR102198313B1 (ko) 레퍼런스 스위칭을 위한 광학 시스템
US8902419B2 (en) Detection apparatus
CN105899983B (zh) 导模共振设备
JP2013088223A (ja) 光デバイス及び検出装置
US8497987B2 (en) Optical device unit and detection apparatus
JP7446111B2 (ja) 粒子の光学検出器
TW202115382A (zh) 用於積體裝置之光學奈米結構抑制器及其方法
JP5928026B2 (ja) センサーチップおよびその製造方法並びに検出装置
JP2008512668A (ja) ラマン分光法
JP2013234977A (ja) 試料分析素子並びに検査装置およびセンサーカートリッジ
US20140375990A1 (en) Double-grating surface-enhanced raman spectroscopy
JP2013228303A (ja) 試料分析素子および検出装置
JP5796395B2 (ja) 光学デバイス、検出装置及び検出方法
CN102243337A (zh) 高效激发表面等离子体的微纳结构光学器件
JP2008181114A (ja) 金属ナノ粒子−高分子複合体と光導波路材料とからなる積層体
JP2015078904A (ja) 光学素子、分析装置、及び電子機器
JP2020508449A (ja) 粒子の光学検出器
JP2016004018A (ja) ラマン分光装置および電子機器
CN108351298A (zh) Atr反射元件和atr光谱方法
Yuan et al. High refractive index sensitivity sensing in gold nanoslit arrays
Yu et al. Short-range plasmonic nanofocusing within submicron regimes facilitates in situ probing and promoting of interfacial reactions

Legal Events

Date Code Title Description
RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20150107

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20150414

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20150414

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20160209

A761 Written withdrawal of application

Free format text: JAPANESE INTERMEDIATE CODE: A761

Effective date: 20160226