JP2013214743A - 発光ダイオードチップ及びその製造方法 - Google Patents
発光ダイオードチップ及びその製造方法 Download PDFInfo
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- JP2013214743A JP2013214743A JP2013068229A JP2013068229A JP2013214743A JP 2013214743 A JP2013214743 A JP 2013214743A JP 2013068229 A JP2013068229 A JP 2013068229A JP 2013068229 A JP2013068229 A JP 2013068229A JP 2013214743 A JP2013214743 A JP 2013214743A
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- layer
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- light emitting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0091—Scattering means in or on the semiconductor body or semiconductor body package
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
Abstract
【解決手段】本発明に係る発光ダイオードチップは、発光構造体と、前記発光構造体に形成される透明導電層と、前記透明導電層に形成される透明保護層と、を備え、前記透明保護層には、複数の孔が設けられ、前記透明導電層は、前記複数の孔を介して前記透明保護層から露出され、複数の孔から露出する前記透明導電層の表面にマイクロ構造体が形成される。前記発光構造体は、基板並びに前記基板に順次に成長する第一半導体層、活性層、及び第二半導体層を備え、前記第一半導体層は、N型窒化ガリウム層であり、第二半導体層は、P型窒化ガリウム層である。
【選択図】図1
Description
11、21 基板
111 バッファ層
12、22 第一半導体層
121 第一区域
122 第二区域
13、23 活性層
14、24 第二半導体層
15、25 透明導電層
151、251 マイクロ構造体
16、26 透明保護層
161、261 孔
162 スルーホール
17、27 第一電極
18、28 第二電極
19、29 発光構造体
Claims (4)
- 発光構造体と、前記発光構造体に形成される透明導電層と、前記透明導電層に形成される透明保護層と、を備える発光ダイオードチップにおいて、前記透明保護層には、複数の孔が設けられ、前記透明導電層は、前記複数の孔を介して、前記透明保護層から露出し、複数の孔から露出する前記透明導電層の表面にマイクロ構造体が形成されることを特徴とする発光ダイオードチップ。
- 前記発光構造体は、基板並びに前記基板に順次に形成される第一半導体層、活性層、及び第二半導体層を備え、前記第一半導体層は、N型窒化ガリウム層であり、第二半導体層は、P型窒化ガリウム層であることを特徴とする請求項1に記載の発光ダイオードチップ。
- 前記発光ダイオードチップは、第一電極及び第二電極をさらに備え、前記第一電極は、透明導電層に形成され且つ前記透明保護層から露出し、前記第二電極は、第一半導体層に形成されることを特徴とする請求項1または2に記載の発光ダイオードチップ。
- 発光構造体を提供するステップと、
前記発光構造体に透明導電層及び透明保護層を順次に形成するステップと、
前記透明保護層に複数の孔を設け、前記透明導電層を孔の底部から露出させるステップと、
前記孔の底部から露出する前記透明導電層の表面を粗化して複数のマイクロ構造体を形成するステップと、を備えることを特徴とする発光ダイオードチップの製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201210089533.2A CN103367595B (zh) | 2012-03-30 | 2012-03-30 | 发光二极管晶粒及其制造方法 |
CN201210089533.2 | 2012-03-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013214743A true JP2013214743A (ja) | 2013-10-17 |
JP5632034B2 JP5632034B2 (ja) | 2014-11-26 |
Family
ID=49233696
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013068229A Expired - Fee Related JP5632034B2 (ja) | 2012-03-30 | 2013-03-28 | 発光ダイオードチップ及びその製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9054288B2 (ja) |
JP (1) | JP5632034B2 (ja) |
CN (1) | CN103367595B (ja) |
TW (1) | TWI563681B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017054901A (ja) * | 2015-09-09 | 2017-03-16 | 豊田合成株式会社 | Iii族窒化物半導体発光装置とその製造方法 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101517995B1 (ko) * | 2013-03-29 | 2015-05-07 | 경희대학교 산학협력단 | 그래핀에 의하여 광증폭된 발광 소자 및 이의 제조방법 |
TW201616674A (zh) * | 2014-10-17 | 2016-05-01 | 新世紀光電股份有限公司 | 發光二極體基板之圖形化微結構 |
CN110993764A (zh) * | 2019-12-17 | 2020-04-10 | 湘能华磊光电股份有限公司 | 一种具有粗化结构的led芯片及其制备方法 |
US20220140198A1 (en) * | 2020-10-30 | 2022-05-05 | Lumileds Llc | Light Emitting Diode Devices |
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JP2000216431A (ja) * | 1998-11-19 | 2000-08-04 | Sanyo Electric Co Ltd | 発光素子 |
JP2007165515A (ja) * | 2005-12-13 | 2007-06-28 | Showa Denko Kk | 窒化ガリウム系化合物半導体発光素子 |
JP2008198876A (ja) * | 2007-02-14 | 2008-08-28 | Mitsubishi Chemicals Corp | GaN系LED素子および発光装置 |
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US6882100B2 (en) * | 2001-04-30 | 2005-04-19 | Hewlett-Packard Development Company, L.P. | Dielectric light device |
KR20050071238A (ko) * | 2003-12-31 | 2005-07-07 | 엘지전자 주식회사 | 고휘도 발광 소자 및 그 제조 방법 |
TWI229949B (en) * | 2004-01-19 | 2005-03-21 | Genesis Photonics Inc | Manufacturing process and product of LED |
JP2005277374A (ja) * | 2004-02-26 | 2005-10-06 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体発光素子及びその製造方法 |
JP4371029B2 (ja) * | 2004-09-29 | 2009-11-25 | サンケン電気株式会社 | 半導体発光素子およびその製造方法 |
US9508902B2 (en) * | 2005-02-21 | 2016-11-29 | Epistar Corporation | Optoelectronic semiconductor device |
KR100654533B1 (ko) * | 2005-05-24 | 2006-12-06 | 엘지전자 주식회사 | 광 추출용 나노 로드를 갖는 발광 소자 및 그의 제조방법 |
US8674375B2 (en) * | 2005-07-21 | 2014-03-18 | Cree, Inc. | Roughened high refractive index layer/LED for high light extraction |
JP2007165613A (ja) * | 2005-12-14 | 2007-06-28 | Showa Denko Kk | 窒化ガリウム系化合物半導体発光素子及びその製造方法 |
US20100273331A1 (en) * | 2006-07-05 | 2010-10-28 | National Central University | Method of fabricating a nano/micro structure |
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2012
- 2012-03-30 CN CN201210089533.2A patent/CN103367595B/zh not_active Expired - Fee Related
- 2012-04-06 TW TW101112206A patent/TWI563681B/zh not_active IP Right Cessation
- 2012-10-28 US US13/662,525 patent/US9054288B2/en not_active Expired - Fee Related
-
2013
- 2013-03-28 JP JP2013068229A patent/JP5632034B2/ja not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2000216431A (ja) * | 1998-11-19 | 2000-08-04 | Sanyo Electric Co Ltd | 発光素子 |
JP2007165515A (ja) * | 2005-12-13 | 2007-06-28 | Showa Denko Kk | 窒化ガリウム系化合物半導体発光素子 |
JP2008198876A (ja) * | 2007-02-14 | 2008-08-28 | Mitsubishi Chemicals Corp | GaN系LED素子および発光装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2017054901A (ja) * | 2015-09-09 | 2017-03-16 | 豊田合成株式会社 | Iii族窒化物半導体発光装置とその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US9054288B2 (en) | 2015-06-09 |
TW201340388A (zh) | 2013-10-01 |
CN103367595B (zh) | 2016-02-10 |
CN103367595A (zh) | 2013-10-23 |
TWI563681B (en) | 2016-12-21 |
US20130256702A1 (en) | 2013-10-03 |
JP5632034B2 (ja) | 2014-11-26 |
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