JP2013206940A - 半導体装置及びその製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 64
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 239000012535 impurity Substances 0.000 claims abstract description 111
- 238000009792 diffusion process Methods 0.000 claims abstract description 32
- 150000001787 chalcogens Chemical group 0.000 claims abstract description 31
- 229910052798 chalcogen Inorganic materials 0.000 claims description 22
- 238000010438 heat treatment Methods 0.000 claims description 18
- 229910052717 sulfur Inorganic materials 0.000 claims description 17
- 229910052711 selenium Inorganic materials 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 7
- 238000003860 storage Methods 0.000 claims description 3
- 230000004913 activation Effects 0.000 abstract description 5
- 230000006872 improvement Effects 0.000 abstract description 4
- 238000009413 insulation Methods 0.000 abstract 2
- 239000010410 layer Substances 0.000 description 43
- 239000000758 substrate Substances 0.000 description 31
- 229910052714 tellurium Inorganic materials 0.000 description 13
- 229910052698 phosphorus Inorganic materials 0.000 description 11
- 238000005468 ion implantation Methods 0.000 description 10
- 238000000137 annealing Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000001133 acceleration Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 240000006829 Ficus sundaica Species 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000012299 nitrogen atmosphere Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
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Abstract
【解決手段】半導体装置であって、p型半導体層10と、半導体層10の表面部に離間して設けられた一対のn型不純物拡散領域14と、半導体層10のn型不純物拡散領域14により挟まれた領域上に設けられたゲート絶縁膜11と、ゲート絶縁膜11上に設けられたゲート電極12とを備えている。そして、n型不純物拡散領域14は二種類以上の不純物を有しており、二種類以上の不純物の一種がカルコゲンの群から選択された元素であり、別の一種がn型不純物である。
【選択図】 図11
Description
図11は、第1の実施形態に係わるGe−MOSFETの概略構成を示す断面図である。
図13(a)(b)は、第2の実施形態に係わる不揮発性半導体記憶装置の概略構成を示す断面図であり、図13(a)は図13(b)のA−A’断面に相当している。
図14は、第3の実施形態に係わるジャンクションレス・トランジスタを示す概略構成図である。
なお、本発明は上述した各実施形態に限定されるものではない。
11…ゲート絶縁膜
12…ゲート電極
13,14…ソース/ドレイン領域
20…Si基板
21…トンネル絶縁膜
22…浮遊ゲート電極
23…電極間絶縁膜
24…制御ゲート電極
25…素子分離絶縁膜
31…n+−Ge層
32…ゲート絶縁膜
33…ゲート電極
34,35…ソース/ドレイン電極
Claims (10)
- 第1導電型の半導体層の一部に第2導電型の不純物拡散領域を有する半導体装置であって、
前記不純物拡散領域は、二種類以上の不純物を有しており、前記二種類以上の不純物の一種がカルコゲンの群から選択された元素であり、別の一種類が第2導電型の不純物であることを特徴とする半導体装置。 - 第1導電型の半導体層と、
前記半導体層の表面部に離間して設けられた一対の第2導電型の不純物拡散領域と、
前記半導層の前記一対の不純物拡散領域により挟まれた領域上に設けられたゲート絶縁膜と、
前記ゲート絶縁膜上に設けられたゲート電極と、
を備え、
前記不純物拡散領域は二種類以上の不純物を有しており、前記二種類以上の不純物の一種がカルコゲンの群から選択された元素であり、別の一種類が第2導電型の不純物であることを特徴とする半導体装置。 - p型半導体層と、
前記半導体層の表面部に離間して設けられた一対のn型不純物拡散領域と、
前記半導体層の前記一対のn型不純物拡散領域により挟まれた領域上に設けられたゲート絶縁膜と、
前記ゲート絶縁膜上に設けられたゲート電極と、
を備え、
前記n型不純物拡散領域は二種類以上の不純物を有しており、前記二種類以上の不純物の一種がカルコゲンの群から選択された元素であり、別の一種がn型不純物であることを特徴とする半導体装置。 - 前記半導体層はp型Ge層であり、前記カルコゲンの群はS,Se,又はTeであり、前記n型不純物はPであることを特徴とする請求項3記載の半導体装置。
- 第1導電型の半導体層と、
前記半導体層の表面部に離間して設けられた一対のソース/ドレイン電極と、
前記ソース/ドレイン電極間の前記半導層上に設けられたゲート絶縁膜と、
前記ゲート絶縁膜上に設けられたゲート電極と、
を備えたジャンクションレス構造の半導体装置であって、
前記半導体層は二種類以上の不純物を有しており、前記二種類以上の不純物の一種がカルコゲンの群から選択された元素であり、別の一種が第1導電型不純物であることを特徴とする半導体装置。 - 半導体層上に電荷蓄積層と制御ゲートを積層した不揮発性メモリを形成した半導体装置であって、
前記電荷蓄積層及び前記制御ゲートの少なくとも一方は二種類以上の不純物を有しており、前記二種類以上の不純物の一種がカルコゲンの群から選択された元素であり、別の一種がn型不純物であることを特徴とする半導体装置。 - 第1導電型半導体層の一部に、カルコゲンの群から選択された一種と第2導電型の不純物を導入する工程と、
前記半導体層に熱処理を施して、前記導入された不純物を活性化する工程と、
を含むことを特徴とする半導体装置の製造方法。 - 第1導電型の半導体層の表面部に、ソース/ドレイン領域とすべき領域に合わせて、カルコゲンの群から選択された元素と第2導電型不純物を導入する工程と、
前記カルコゲン及び前記第2導電型不純物の導入後に熱処理を施すことにより、前記ソース/ドレイン領域に第2導電型の不純物拡散領域を形成する工程と、
を含むことを特徴とする半導体装置の製造方法。 - p型半導体層の表面部に、ソース/ドレイン領域とすべき領域に合わせて、カルコゲンの群から選択された元素とn型不純物を導入する工程と、
前記カルコゲン及び前記n型不純物の導入後に熱処理を施すことにより、前記ソース/ドレイン領域にn型不純物拡散領域を形成する工程と、
を含むことを特徴とする半導体装置の製造方法。 - p半導体層の一部にn型不純物拡散領域を有する半導体装置であって、
前記n型不純物拡散領域は、S,Se,Teの導入により形成されていることを特徴とする半導体装置。
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TW101143244A TWI529938B (zh) | 2012-03-27 | 2012-11-20 | 半導體裝置及其製造方法 |
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JPS63211666A (ja) * | 1987-02-26 | 1988-09-02 | Fuji Electric Co Ltd | ポリシリコン抵抗素子 |
JPH10223901A (ja) * | 1996-12-04 | 1998-08-21 | Sony Corp | 電界効果型トランジスタおよびその製造方法 |
JP2007103897A (ja) * | 2005-09-09 | 2007-04-19 | Fujitsu Ltd | 電界効果トランジスタおよびその製造方法 |
JP2010109122A (ja) * | 2008-10-30 | 2010-05-13 | Toshiba Corp | 半導体装置および半導体装置の製造方法 |
US20100276662A1 (en) * | 2008-09-05 | 2010-11-04 | University College Cork, National University Of Ireland | Junctionless metal-oxide-semiconductor transistor |
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JP2002151526A (ja) * | 2000-09-04 | 2002-05-24 | Seiko Epson Corp | 電界効果トランジスタの製造方法および電子装置 |
JP2009054951A (ja) * | 2007-08-29 | 2009-03-12 | Toshiba Corp | 不揮発性半導体記憶素子及びその製造方法 |
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2012
- 2012-03-27 JP JP2012071409A patent/JP5865751B2/ja active Active
- 2012-11-07 WO PCT/JP2012/078882 patent/WO2013145412A1/ja active Application Filing
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63211666A (ja) * | 1987-02-26 | 1988-09-02 | Fuji Electric Co Ltd | ポリシリコン抵抗素子 |
JPH10223901A (ja) * | 1996-12-04 | 1998-08-21 | Sony Corp | 電界効果型トランジスタおよびその製造方法 |
JP2007103897A (ja) * | 2005-09-09 | 2007-04-19 | Fujitsu Ltd | 電界効果トランジスタおよびその製造方法 |
US20100276662A1 (en) * | 2008-09-05 | 2010-11-04 | University College Cork, National University Of Ireland | Junctionless metal-oxide-semiconductor transistor |
JP2010109122A (ja) * | 2008-10-30 | 2010-05-13 | Toshiba Corp | 半導体装置および半導体装置の製造方法 |
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WO2013145412A1 (ja) | 2013-10-03 |
TW201340320A (zh) | 2013-10-01 |
TWI529938B (zh) | 2016-04-11 |
JP5865751B2 (ja) | 2016-02-17 |
US20150008492A1 (en) | 2015-01-08 |
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