JP2013175263A5 - - Google Patents

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Publication number
JP2013175263A5
JP2013175263A5 JP2013003386A JP2013003386A JP2013175263A5 JP 2013175263 A5 JP2013175263 A5 JP 2013175263A5 JP 2013003386 A JP2013003386 A JP 2013003386A JP 2013003386 A JP2013003386 A JP 2013003386A JP 2013175263 A5 JP2013175263 A5 JP 2013175263A5
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JP
Japan
Prior art keywords
voltage
node
power supply
level
reference voltage
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Application number
JP2013003386A
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English (en)
Japanese (ja)
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JP2013175263A (ja
JP5911437B2 (ja
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Priority claimed from KR1020120019832A external-priority patent/KR20130098041A/ko
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Publication of JP2013175263A publication Critical patent/JP2013175263A/ja
Publication of JP2013175263A5 publication Critical patent/JP2013175263A5/ja
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Publication of JP5911437B2 publication Critical patent/JP5911437B2/ja
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JP2013003386A 2012-02-27 2013-01-11 低い外部電源電圧に適した電圧発生部 Active JP5911437B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2012-0019832 2012-02-27
KR1020120019832A KR20130098041A (ko) 2012-02-27 2012-02-27 낮은 외부 전원 전압에 적합한 전압 발생부들

Publications (3)

Publication Number Publication Date
JP2013175263A JP2013175263A (ja) 2013-09-05
JP2013175263A5 true JP2013175263A5 (enExample) 2015-12-10
JP5911437B2 JP5911437B2 (ja) 2016-04-27

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013003386A Active JP5911437B2 (ja) 2012-02-27 2013-01-11 低い外部電源電圧に適した電圧発生部

Country Status (6)

Country Link
US (1) US9053814B2 (enExample)
JP (1) JP5911437B2 (enExample)
KR (1) KR20130098041A (enExample)
CN (1) CN103295623B (enExample)
DE (1) DE102012111282A1 (enExample)
TW (1) TWI620189B (enExample)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9036369B2 (en) * 2012-10-12 2015-05-19 Power Integrations, Inc. Programming of an integrated circuit on a multi-function terminal
US9496007B2 (en) * 2013-10-25 2016-11-15 Texas Instruments Incorporated Method and apparatus for generating piece-wise linear regulated supply
CN104699153B (zh) * 2013-12-10 2017-02-08 展讯通信（上海）有限公司 低压差线性稳压器
KR102171261B1 (ko) * 2013-12-27 2020-10-28 삼성전자 주식회사 다수의 전압 발생부들을 갖는 메모리 장치
CN105206297B (zh) * 2014-06-25 2018-12-18 华邦电子股份有限公司 内部电压产生装置
JP2016170303A (ja) * 2015-03-13 2016-09-23 シナプティクス・ジャパン合同会社 半導体装置及び電子機器
KR102374228B1 (ko) * 2015-08-27 2022-03-15 삼성전자주식회사 저항성 메모리 장치의 부스트 전압 생성기, 이를 포함하는 전압 생성기 및 이를 포함하는 저항성 메모리 장치
CN107276553B (zh) * 2016-04-06 2019-01-11 综合器件技术公司 具有宽输入电压范围的单端信号限幅器
JP2017224978A (ja) * 2016-06-15 2017-12-21 東芝メモリ株式会社 半導体装置
KR102665270B1 (ko) * 2016-11-09 2024-05-13 에스케이하이닉스 주식회사 반도체 메모리 장치 및 그것의 동작 방법
JP2018147533A (ja) * 2017-03-03 2018-09-20 ソニーセミコンダクタソリューションズ株式会社 半導体記憶装置、情報処理装置及びリファレンス電位設定方法
US10496115B2 (en) 2017-07-03 2019-12-03 Macronix International Co., Ltd. Fast transient response voltage regulator with predictive loading
US10860043B2 (en) 2017-07-24 2020-12-08 Macronix International Co., Ltd. Fast transient response voltage regulator with pre-boosting
US20190050012A1 (en) * 2017-08-10 2019-02-14 Macronix International Co., Ltd. Voltage regulator with improved slew rate
JP6522201B1 (ja) * 2018-05-14 2019-05-29 ウィンボンド エレクトロニクス コーポレーション 半導体装置
JP7033786B2 (ja) * 2018-07-13 2022-03-11 ザインエレクトロニクス株式会社 イコライザ調整装置、イコライザ調整方法、受信機および送受信システム
CN114762206A (zh) * 2019-12-03 2022-07-15 Lg伊诺特有限公司 电压监控电路
KR20210093606A (ko) * 2020-01-20 2021-07-28 삼성전자주식회사 메모리 장치의 전압 발생 회로 및 그것의 동작 방법
TWI729887B (zh) 2020-07-21 2021-06-01 華邦電子股份有限公司 電壓調整器
US11636891B2 (en) * 2021-04-28 2023-04-25 Micron Technology, Inc. Varying a time average for feedback of a memory system
CN117406847B (zh) * 2023-12-14 2024-04-09 浙江地芯引力科技有限公司 芯片及其供电电路和电子设备

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR940003406B1 (ko) * 1991-06-12 1994-04-21 삼성전자 주식회사 내부 전원전압 발생회로
IT1272933B (it) 1994-01-28 1997-07-01 Fujitsu Ltd Dispositivo a circuito integrato di semiconduttore
KR100210604B1 (ko) 1994-12-27 1999-07-15 류정열 기관의 배기 과급기
KR970006745B1 (ko) 1995-01-28 1997-04-30 대우자동차 주식회사 차량의 주행거리 음성경보장치
KR0141157B1 (ko) * 1995-04-24 1998-07-15 김광호 기준전압발생회로
KR0131930B1 (ko) 1995-05-08 1998-04-13 홍건희 카카스의 연결구조
KR0149577B1 (ko) * 1995-06-12 1998-12-01 김광호 반도체 메모리 장치의 내부 전원전압 발생회로
KR0132918B1 (ko) 1995-08-25 1998-04-21 전성원 마찰재 마모분진 회수에 의한 브레이크의 소음발생 방지장치
KR0174889B1 (ko) 1995-12-19 1999-03-20 배순훈 전원오프시 방송 프로그램 안내기능을 가진 텔레비젼 수신장치 및 전원오프시 방송 프로그램 안내방법
KR100205546B1 (ko) 1996-08-22 1999-07-01 윤종용 기준전압발생회로
KR19990015338A (ko) 1997-08-05 1999-03-05 안양순 황토제 경량 건축재
US6157332A (en) * 1998-05-01 2000-12-05 Ati Technologies, Inc. Self-calibrating video digital to analog converter
JPH11328954A (ja) 1998-05-12 1999-11-30 Toshiba Microelectronics Corp 基準電圧発生回路およびこれを用いた半導体記憶装置
US6285242B1 (en) * 1999-02-05 2001-09-04 United Microelectronics Corporation Reference voltage shifter
US6226205B1 (en) 1999-02-22 2001-05-01 Stmicroelectronics, Inc. Reference voltage generator for an integrated circuit such as a dynamic random access memory (DRAM)
JP5102413B2 (ja) * 2000-07-12 2012-12-19 ユナイテッド・マイクロエレクトロニクス・コーポレイション 第１の電源電圧から第２の電源電圧を生成する装置、基準電圧発生器、ならびに、所望の電圧を生成するための方法および装置
JP3851791B2 (ja) * 2001-09-04 2006-11-29 株式会社東芝 半導体集積回路
KR20030021916A (ko) 2001-09-10 2003-03-15 현대자동차주식회사 내마모성이 강화된 밸브 시이트용 소결합금재 조성물 및그의 제조방법
JP3739760B2 (ja) * 2003-06-04 2006-01-25 ローム株式会社 スイッチングレギュレータ
JP2005038482A (ja) * 2003-07-17 2005-02-10 Toshiba Microelectronics Corp 半導体装置
JP4652726B2 (ja) * 2004-06-11 2011-03-16 富士通セミコンダクター株式会社 Ｄｃ−ｄｃコンバータの制御回路、ｄｃ−ｄｃコンバータ及び電子機器
US7356716B2 (en) * 2005-02-24 2008-04-08 International Business Machines Corporation System and method for automatic calibration of a reference voltage
US7961546B2 (en) * 2008-02-05 2011-06-14 Texas Instruments Incorporated Memory power management systems and methods
KR20090103118A (ko) 2008-03-27 2009-10-01 삼성전자주식회사 내부전압 발생회로
JP5535447B2 (ja) * 2008-05-15 2014-07-02 ピーエスフォー ルクスコ エスエイアールエル 電源電圧降圧回路、半導体装置および電源電圧回路
KR101131940B1 (ko) 2009-06-16 2012-04-12 주식회사 하이닉스반도체 반도체 장치
KR101144079B1 (ko) 2010-08-27 2012-05-23 기아자동차주식회사 자동차 도어의 임팩트빔 고정용 브라켓
KR101802439B1 (ko) * 2011-07-14 2017-11-29 삼성전자주식회사 전압 레귤레이터 및 이를 포함하는 메모리 장치
JP2013070462A (ja) * 2011-09-21 2013-04-18 Elpida Memory Inc 半導体装置及びこれを備える情報処理装置

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